| *********************************************************** |
| * SKY90-FD FDSOI Spice Models |
| * Generating model files for flow : copper7lm |
| * Model Type: general models |
| * Version: 1.09.03C |
| * Date: 08/22/2022 |
| *********************************************************** |
| * |
| * |
| ************************************************************** |
| * Global parameters, functions, and Monte Carlo |
| * Corner parameters descriptions: Corner_Parameters.html |
| ************************************************************** |
| |
| *********************************** |
| * Global functions |
| * --------------------------------- |
| |
| parameters swr_tox_lv = sw_tox_lv / 1.8e-9 |
| parameters swr_tox_hv = sw_tox_hv / 6.2e-9 |
| |
| * -------- Calculated Source/Drain instance parameters ----- |
| real swf_fet_as (real nf, real w) { |
| return ( (nf-1)*0.25u + 2*0.225u) * w * 0.5 |
| } |
| real swf_fet_ps (real nf, real w) { |
| return (nf-1)*0.25u + 2*0.225u + w*(nf+1) |
| } |
| * --- SBC Only |
| real swf_fet_sbc_as (real nf, real w) { |
| return ( (nf-1)*0.25u + 2*0.225u) * (w+0.15u) * 0.5 |
| } |
| real swf_fet_sbc_ps (real nf, real w) { |
| return (nf-1)*0.25u + 2*0.225u + (w+0.15u)*(nf+1) |
| } |
| |
| * -------- T-gate and H-gate instance parameters ----- |
| real swf_psbcp (real nf, real nbc) { |
| return ( (nf-1)*0.25u + 2*0.225u ) * 0.5 * nbc |
| } |
| real swf_agbcp (real nf, real l, real nbc) { |
| return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.075u * nbc |
| } |
| real swf_aebcp (real nf, real l, real nbc) { |
| return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.375u * nbc |
| } |
| * --- SBC Only |
| real swf_psbcp_sbc (real nf) { |
| return ( floor(nf/2)+1 ) * 0.225u |
| } |
| real swf_agbcp_sbc (real nf) { |
| return 2*nf*0.075u*0.15u |
| } |
| real swf_aebcp_sbc (real nf) { |
| return (floor(nf/2) + 1)*2*0.375u*0.15u |
| } |
| |
| ******************************************************** |
| ****************************************************************** |
| ****************************************************************** |
| |
| subckt cap_metals pos neg |
| |
| parameters l nf toplev botlev |
| |
| //numlayers=(m1_used+m2_used+m3_used+m4_used+m5_used) |
| parameters m1_used=(botlev<=1 && toplev>=1) |
| parameters m2_used=(botlev<=2 && toplev>=2) |
| parameters m3_used=(botlev<=3 && toplev>=3) |
| parameters m4_used=(botlev<=4 && toplev>=4) |
| parameters m5_used=(botlev<=5 && toplev>=5) |
| |
| //"IsM2Bot" is 1 if M2 is the bottom layer of the stack |
| //"IsM2Shielded" is 1 if M2 is in the stack, but is not the bottom metal |
| parameters ism1bot=(botlev==1) |
| parameters ism2bot=(botlev==2) |
| parameters ism3bot=(botlev==3) |
| parameters ism4bot=(botlev==4) |
| parameters ism5bot=(botlev==5) |
| |
| parameters ism2shielded=(botlev<2 && toplev>=2) |
| parameters ism3shielded=(botlev<3 && toplev>=3) |
| parameters ism4shielded=(botlev<4 && toplev>=4) |
| parameters ism5shielded=(botlev<5 && toplev>=5) |
| |
| parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(pow(2.71828,(l/1e-6))-1+exp(3.29))-2.95)*0.0771 |
| //parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(exp(l/1e-6)-1+exp(3.29))-2.95)*0.0771 |
| parameters c_pos=1e-15*nf*(l/1e-6 + 2.5)*(ism1bot*0.015 + ism2bot*0.0095 + ism3bot*0.0075 + ism4bot*0.0065 + ism5bot*0.0059 + ism2shielded*0.0027 + ism3shielded*0.0043 + ism4shielded*0.0040 + ism5shielded*0.0036) |
| parameters c_neg=c_pos |
| |
| cdevice (pos neg) capacitor c=c_allfingers*sw_cap_metals |
| cc_pos (pos 0) capacitor c=c_pos |
| cc_neg (neg 0) capacitor c=c_neg |
| |
| ends cap_metals |
| |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| subckt cap_mim pos neg |
| |
| parameters w l |
| |
| cap_mim (pos neg) capacitor c=sw_cap_mim_ca * (w+sw_cap_mim_dw) * (l+sw_cap_mim_dw) |
| |
| ends cap_mim |
| |
| |
| ****************************************************************** |
| ****************************************************************** |
| // ----------------------------------------------------------- |
| // Forward bias diode model |
| // ----------------------------------------------------------- |
| |
| subckt diode_nplus_vtp ( a c ) |
| parameters w = 0.8u |
| + swx_is = exp(35.5*(1-sw_res_nplus_poly)*0.2) // 35.5 is q/(nkT) |
| |
| d0 ( a c) diode_main area=w |
| d1 ( a c) diode_recombine area=w |
| d2 ( c a) diode_reverse_leak area=w |
| |
| model diode_main diode |
| //*** Flag Parameter *** |
| +level = 1 |
| //*** Junction Diode Parameter *** |
| +is = 1.130276E-13 * swx_is |
| +n = 1.093706 |
| //*** Breakdown Parameter *** |
| +vb = 5.725628 ibv = 1E-3 nz = 9.077509 |
| //*** Parasitic Resistance Parameter *** |
| +rs = 2.806622E-5 |
| //*** Temperature Effects Parameter *** |
| +tlev = 0 tlevc = 0 eg = 1.11705 |
| +xti = 3.637179 tbv1 = 0 tnom = 25 |
| +trs = 1.206836E-3 cta = 0 ctp = 0 |
| +pta = 0 ptp = 0 |
| //*** Junction Diode Model Control Parameter *** |
| +imax = 1E12 |
| //*** Capacitance Parameter *** |
| +cjo = 1E-10*3.14 / sw_rdsw_pmos_lowvt vj = 0.6 mj = 0.5 |
| +cjsw = 0 vjsw = 0.8 mjsw = 0.33 |
| +fc = 0.5 |
| |
| // *********************** |
| |
| model diode_recombine diode |
| //*** Flag Parameter *** |
| +level = 1 |
| //*** Junction Diode Parameter *** |
| +is = 6.694065E-9 n = 2.147432 |
| //*** Breakdown Parameter *** |
| +bv = 6 ibv = 0.01 nz = 21.448254 |
| //*** Parasitic Resistance Parameter *** |
| +rs = 4.730854 |
| //*** Temperature Effects Parameter *** |
| +tlev = 2 eg = 0.449216 gap1 = 8.693526E-3 |
| +gap2 = 657.504199 xti = 0.1711 tbv1 = 4.661495E-3 |
| +tnom = 25 |
| // trs = -7.32374E-2 |
| //*** Junction Diode Model Control Parameter *** |
| +imax = 1e12 |
| |
| // *********************** |
| |
| model diode_reverse_leak diode |
| //*** Junction Diode Parameter *** |
| +is = 1.136472E-8 n = 2.543035 |
| //*** Parasitic Resistance Parameter *** |
| +rs = 267.790479 * sw_rdsw_pmos_lowvt |
| //*** Temperature Effects Parameter *** |
| +eg = 0.851245 xti = 1.870884 tnom = 25 |
| //+trs = -7.622322E-3 |
| //+minr = 1 |
| //*** Junction Diode Model Control Parameter *** |
| +imax = 1e12 |
| |
| ends diode_nplus_vtp |
| |
| ****************************************************************** |
| ****************************************************************** |
| // ----------------------------------------------------------- |
| // Forward bias diode model |
| // ----------------------------------------------------------- |
| |
| subckt diode_pplus_vtn ( a c ) |
| parameters w = 0.8u |
| + swx_is = exp(35.5*(1-sw_res_pplus_poly)*0.2) // 35.5 is q/(nkT) |
| |
| d0 ( a c) diode_main area=w |
| d1 ( a c) diode_recombine area=w |
| d2 ( c a) diode_reverse_leak area=w |
| |
| model diode_main diode |
| //*** Flag Parameter *** |
| +level = 1 |
| //*** Junction Diode Parameter *** |
| +is = 9.25927E-14 * swx_is n = 1.070162 |
| //*** Breakdown Parameter *** |
| +vb = 5.725628 ibv = 1E-3 nz = 9.077509 |
| //*** Parasitic Resistance Parameter *** |
| +rs = 3.329246E-5 |
| //*** Temperature Effects Parameter *** |
| +tlev = 0 tlevc = 0 eg = 1.106282 |
| +xti = 3.943658 tbv1 = 0 tnom = 25 |
| +trs = 1.508794E-3 cta = 0 ctp = 0 |
| +pta = 0 ptp = 0 |
| //*** Junction Diode Model Control Parameter *** |
| +imax = 1E12 |
| //*** Capacitance Parameter *** |
| +cjo = 1E-10*3.14 / sw_rdsw_nmos_lowvt vj = 0.6 mj = 0.5 |
| +cjsw = 0 vjsw = 0.8 mjsw = 0.33 |
| +fc = 0.5 |
| |
| // *********************** |
| |
| model diode_recombine diode |
| //*** Flag Parameter *** |
| +level = 1 minr = 1E-3 |
| //*** Junction Diode Parameter *** |
| +is = 3.43374E-8 n = 2.647693 |
| //*** Breakdown Parameter *** |
| +bv = 7.5 ibv = 0.01 nz = 1 |
| //*** Parasitic Resistance Parameter *** |
| +rs = 34.156126 |
| //*** Temperature Effects Parameter *** |
| +tlev = 2 eg = 0.262786 gap1 = 1.08734E-2 |
| +gap2 = 867.969167 xti = 0.31759 tbv1 = 0 |
| +tnom = 25 |
| // trs = -0.124572 |
| //*** Junction Diode Model Control Parameter *** |
| +imax = 1e12 |
| |
| // *********************** |
| |
| model diode_reverse_leak diode |
| //*** Junction Diode Parameter *** |
| +is = 1.202149E-14 n = 0.500069 ikf = 5.16894E-2 |
| //*** Parasitic Resistance Parameter *** |
| +rs = 5.892906E3 * sw_rdsw_nmos_lowvt |
| //*** Temperature Effects Parameter *** |
| +eg = 0.679891 xti = 0.645549 tnom = 25 |
| // +trs = -1.199791E-3 |
| //*** Junction Diode Model Control Parameter *** |
| +imax = 1e12 |
| |
| ends diode_pplus_vtn |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| |
| inline subckt base_nmos_1p2v_highvt_bodytie (d g s e p) |
| |
| parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp |
| + swx_align_poly |
| |
| base_nmos_1p2v_highvt_bodytie (d g s e p) nmos_1p2v_highvt_bodytie_model |
| + l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| model nmos_1p2v_highvt_bodytie_model bsimsoi type=n |
| + wmax = 5.1u lmax = 0.6u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.034 bdos = 0.6 |
| ***** Vth Related Parameter *** |
| +vth0 = 0.46 + sw_vth0_nmos_highvt k1 = 0.2 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.15 k3 = 0 |
| +k3b = 0 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53 |
| +dvt2 = -0.032 dvt0w = -swx_align_poly*1.14e7*0.7 dvt1w = 0 |
| +dvt2w = 0 nlx = 1.74E-7 |
| ***** Mobility Related Parameter *** |
| +u0 = 100*sw_u0_nmos_highvt ua = 0 ub = 0 |
| +uc = 0 vsat = 4.4E4 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_nmos_highvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 * 0.85 |
| +etab = 0 dsub = 0.05 cit = 0 |
| +cdsc = 9E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = 1.6E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0 lpclm = 0 wpclm = 0.25 |
| +pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = 0 delta = 7.5E-3 |
| +alpha0 = 1E-8 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E8 |
| +cgidl = 0 egidl = 0.72 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8 |
| +iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-11 vrec0 = 0.075 |
| +vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7 |
| +vabjt = 9.7 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 1.7 lminv = -0.017 wminv = 0.118 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.01596 bigc = 0 cigc = 0.0273 |
| +aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2 |
| +nigc = 4 pigcd = 0.5 dlcig = 1E-9 |
| +ntox = 1.024 toxref = 1.8E-9 ebg = 1.15 |
| +alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200 |
| +vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06 |
| +vgb2 = 200 vecb = 3 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6 |
| +cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6 |
| +cf = 0 clc = 5E-7 cle = 0.6 |
| +dlc = 3.35E-8 llc = 0 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +voffcv = -0.2 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -1.5 kt1 = -0.165 |
| +kt1l = 0 kt2 = 0.022 ua1 = 0 |
| +ub1 = 0 uc1 = -5.6E-11 at = 100 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| ***** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| ***** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +minvcv = 0 |
| +vsdfb = -5.0 |
| +vsdth = -3.0 |
| +csdmin = 1.0e-4 |
| |
| ends base_nmos_1p2v_highvt_bodytie |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt base_nmos_1p2v_lowvt_bodytie (d g s e p) |
| |
| parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp |
| + swx_align_poly nbc |
| |
| base_nmos_1p2v_lowvt_bodytie (d g s e p) base_nmos_1p2v_lowvt_bodytie_model |
| + l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| model base_nmos_1p2v_lowvt_bodytie_model bsimsoi type=n |
| + wmax = 5.1u lmax = 0.4u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.034 bdos = 0.6 |
| ***** Vth Related Parameter *** |
| +vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.008 k1 = 0.2 k1w1 = 0 |
| +k1w2 = 0 k2 = 0.2245 k3 = 0 |
| +k3b = 0 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 1.7E-7 dvt0 = 3.3 dvt1 = 0.53 |
| +dvt2 = -0.032 dvt0w = -swx_align_poly*1.14e7 dvt1w = 0 |
| +dvt2w = 0 nlx = 1.74E-7 |
| ***** Mobility Related Parameter *** |
| +u0 = 132 * sw_u0_nmos_lowvt * 1.2 ua = 0 ub = 0 |
| +uc = 0 vsat = 4.4E4 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60 prwb = 0 |
| +prwg = 0 wr = 0.9 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.0495 nfactor = 0.714 eta0 = 0.01 |
| +etab = 0 dsub = 0.05 cit = 0 |
| +cdsc = 9E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = 1E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -1.6245E-8 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 6.6 lpclm = 0 wpclm = 0.01 |
| +pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = 0 delta = 0.117575 |
| +alpha0 = 1E-8 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E8 |
| +cgidl = 0 egidl = 0.72 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8 |
| +iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-11 vrec0 = 0.075 |
| +vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7 |
| +vabjt = 9.7 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 1.649 lminv = -0.01598 wminv = 0.177 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.01596 bigc = 0 cigc = 0.0273 |
| +aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2 |
| +nigc = 4 pigcd = 0.5 dlcig = 1E-9 |
| +ntox = 1.024 toxref = 1.8E-9 ebg = 1.15 |
| +alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200 |
| +vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06 |
| +vgb2 = 200 vecb = 3 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6 |
| +cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6 |
| +cf = 0 clc = 5E-7 cle = 0.6 |
| +dlc = 3.35E-8 llc = 0 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +voffcv = -0.2 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -1.5 kt1 = -0.165 |
| +kt1l = 0 kt2 = 0.022 ua1 = 0 |
| +ub1 = 0 uc1 = -5.6E-11 at = 100 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| ***** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| ***** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +minvcv = 0 |
| +vsdfb = -5.0 |
| +vsdth = -3.0 |
| +csdmin = 1.0e-4 |
| |
| ends base_nmos_1p2v_lowvt_bodytie |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt base_pmos_1p2v_highvt_bodytie (d g s e p) |
| |
| parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp |
| + swx_align_poly |
| |
| base_pmos_1p2v_highvt_bodytie (d g s e p) pmos_1p2v_highvt_bodytie_model |
| + l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| model pmos_1p2v_highvt_bodytie_model bsimsoi |
| + wmax = 5.1u lmax = 0.6u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 type=p |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| ***** Vth Related Parameter *** |
| +vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1 k1 = 0.01 k1w1 = 0 |
| +k1w2 = 0 k2 = 0 k3 = -4 |
| +k3b = 0 kb1 = 0 w0 = 0 |
| +lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09 |
| +dvt1 = 0.214 dvt2 = 0 dvt0w = -swx_align_poly*1.14e7 |
| +dvt1w = 1E5 dvt2w = 0 dvtp0 = 0 |
| +dvtp1 = 0 dvtp2 = 0 dvtp3 = 0 |
| +dvtp4 = 0 cdsbs = 1E-3 |
| ***** Mobility Related Parameter *** |
| +u0 = 25*sw_u0_pmos_highvt ua = 0 ub = 0 |
| +uc = 0 vsat = 1E6 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_pmos_highvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.05256 nfactor = 2.21 eta0 = 0.08 |
| +etab = -1E-3 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = -1E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = 3E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0.675 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E9 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 9E-3 bigsd = 0 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +ntox = 4.5 toxref = 1.8E-9 ebg = 1.2 |
| +alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300 |
| +vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05 |
| +vgb2 = 17 vecb = 0.026 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_highvt mjswg = 0.5 |
| +cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +acde = 1 moin = 500 voffcv = -0.5 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -0.73 kt1 = -0.042 |
| +kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0 |
| +ub1 = 0 uc1 = 0 at = 3.4E4 |
| +tcjswg = 0 cth0 = 1E-6 prt = 0 |
| +rth0 = 0.2 ntrecf = 0 ntrecr = 0 |
| +xbjt = 1.15 xdif = 1.11 xrec = 0.9 |
| +xtun = 0 wth0 = 4E-6 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| ***** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +vsdfb = -4.0 |
| +vsdth = -2.0 |
| +csdmin = 1.0e-4 |
| |
| |
| ends base_pmos_1p2v_highvt_bodytie |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt base_pmos_1p2v_lowvt_bodytie (d g s e p) |
| |
| parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp |
| + swx_align_poly nbc |
| |
| base_pmos_1p2v_lowvt_bodytie (d g s e p) base_pmos_1p2v_lowvt_bodytie_model |
| + l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| model base_pmos_1p2v_lowvt_bodytie_model bsimsoi type=p |
| + wmax = 5.1u lmax = 0.4u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| ***** Vth Related Parameter *** |
| +vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.028 k1 = 0.01 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.12 k3 = -4 |
| +k3b = 0 kb1 = 0 w0 = 0 |
| +lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09 |
| +dvt1 = 0.214 dvt2 = 0 dvt0w = -swx_align_poly*7.0e6 |
| +dvt1w = 1E5 dvt2w = 0 dvtp0 = 0 |
| +dvtp1 = 0 dvtp2 = 0 dvtp3 = 0 |
| +dvtp4 = 0 cdsbs = 1E-3 |
| ***** Mobility Related Parameter *** |
| +u0 = 44*(sw_u0_pmos_lowvt**0.8) * 1.3 ua = 0 ub = 0 |
| +uc = 0 vsat = 1E6*5 * 2 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_pmos_lowvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.05256 nfactor = 2.21 eta0 = 0.0276 |
| +etab = -1E-3 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = -2.943E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -5.08E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0.675 * 2 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E9 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 9E-3 bigsd = 0 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +ntox = 4.5 toxref = 1.8E-9 ebg = 1.2 |
| +alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300 |
| +vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05 |
| +vgb2 = 17 vecb = 0.026 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_lowvt mjswg = 0.5 |
| +cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +acde = 1 moin = 500 voffcv = -0.5 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -0.73 kt1 = -0.042 |
| +kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0 |
| +ub1 = 0 uc1 = 0 at = 3.4E4 |
| +tcjswg = 0 cth0 = 1E-6 prt = 0 |
| +rth0 = 0.2 ntrecf = 0 ntrecr = 0 |
| +xbjt = 1.15 xdif = 1.11 xrec = 0.9 |
| +xtun = 0 wth0 = 4E-6 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| ***** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +vsdfb = -4.0 |
| +vsdth = -2.0 |
| +csdmin = 1.0e-4 |
| |
| ends base_pmos_1p2v_lowvt_bodytie |
| ****************************************************************** |
| ****************************************************************** |
| |
| |
| inline subckt nmos_1p2v_highvt_hg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 2 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| |
| |
| nmos_1p2v_highvt_hg (d g s b x) base_nmos_1p2v_highvt_hg |
| + l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc |
| + w=(w-2*sw_dvar_polycd) * nf |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| + delvto = sw_vth0_nmos_highvt + 0.1 |
| |
| |
| model base_nmos_1p2v_highvt_hg bsimsoi |
| //*** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 minr = 1E-60 type = n |
| //*** Geometry Range Parameter *** |
| +lmax = 6E-7 wmax = 5.1E-6 |
| //*** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.5838 bdos = 1.2 |
| //*** Vth Related Parameter *** |
| +vth0 = 0.468 k1 = 0.145671 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.203174 k3 = 0 |
| +k3b = 0 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 9.8E-8 dvt0 = 0.8815 dvt1 = 0.49265 |
| +dvt2 = -0.032 dvt0w = 0.032 dvt1w = 0 |
| +dvt2w = 0 dvtp0 = 1.3E-7 dvtp1 = 0 |
| +dvtp2 = 0 dvtp3 = 0 dvtp4 = 0 |
| +nlx = 1.74E-7 |
| //*** Mobility Related Parameter *** |
| +u0 = 129 * sw_u0_nmos_highvt ua = 0 ub = 0 |
| +uc = 0 vsat = 3.7E4 lvsat = -396 |
| +wvsat = 2.304E3 a0 = 0.22824 ags = 0 |
| +b0 = 0 b1 = 0 keta = 0 |
| +ketas = 0 a1 = 0 a2 = 0.99 |
| +rdsw = 60 * sw_rdsw_nmos_lowvt prwb = 0 prwg = 0 |
| +wr = 0.85 |
| //*** Subthreshold Related Parameter *** |
| +voff = -3.47449E-2 lvoff = -3.1536E-3 wvoff = 3.942E-3 |
| +nfactor = 1.2 eta0 = 1.97064E-2 etab = 0 |
| +dsub = 0.0305 cit = 0 cdsc = 6.57E-3 |
| +cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = 1E-9 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 1.7 lpclm = 0 wpclm = 0.25 |
| +pdiblc1 = 0.01 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = 0 delta = 7.5E-3 |
| +alpha0 = 1E-8 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0 sii2 = 0 |
| +siid = 0 agidl = 3.5E-13 lagidl = -1E-14 |
| +wagidl = 3E-14 bgidl = 1E8 cgidl = 0 |
| +egidl = 0.36 ntun = 10 ndiode = 1.5 |
| +ndioded = 1.5 nrecf0 = 1.6 nrecf0d = 1.6 |
| +nrecr0 = 10 nrecr0d = 10 isbjt = 1E-5 |
| +idbjt = 1E-5 isdif = 5.13E-8 iddif = 4.5E-8 |
| +isrec = 1E-4 idrec = 1E-4 istun = 1E-5 |
| +ln = 1E-11 vrec0 = 0.075 vtun0 = 0 |
| +nbjt = 1.215 lbjt0 = 2E-7 vabjt = 9.7 |
| +aely = 0 ahli = 1E-15 rbody = 10 |
| +rbsh = 100 rhalo = 1E15 minv = 1.088 |
| +lminv = -0.017 wminv = 0.118 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 1.45236E-2 bigc = 0 cigc = 1E-3 |
| +aigsd = 1.12149E-2 laigsd = 0 bigsd = 3.99425E-3 |
| +cigsd = 0.12088 nigc = 4 pigcd = 0.5 |
| +dlcig = 1E-9 toxqm = 3.1E-9*swr_tox_lv ntox = 1.024 |
| +toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.35 |
| +betagb1 = 1E-4 vgb1 = 200 vevb = 0.3 |
| +alphagb2 = 0.6136 betagb2 = 0.06 vgb2 = 200 |
| +vecb = 3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.36E-10/swr_tox_lv cgdo = 3.36E-10/swr_tox_lv |
| +cgeo = 1E-10/swr_tox_lv cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6 |
| +vsdfb = -5 vsdth = -3 csdmin = 1E-4 |
| +cgsl = 4.5E-11/swr_tox_lv cgdl = 4.5E-11/swr_tox_lv ckappa = 0.6 |
| +cf = 0 clc = 5E-7 cle = 0.6 |
| +dlc = 3.7855E-8 llc = 0 lwc = 0 |
| +lwlc = 0 dlbg = 0 dwc = 0 |
| +wlc = 0 wwc = 0 wwlc = 0 |
| +dwbc = 9.102E-8 delvt = 0 ldelvt = -8E-3 |
| +wdelvt = 7.2E-3 fbody = 0 moin = 15 |
| +cfrcoeff = 1 noff = 1 voffcv = -0.2 |
| +minvcv = 0.06 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -1.5 kt1 = -0.231 |
| +kt1l = -2E-8 kt2 = 0.022 ua1 = 1E-9 |
| +ub1 = -1E-18 uc1 = -5.6E-11 at = 1E4 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| //*** Unknown Parameters *** |
| +gatetype = h dskip = yes |
| ends nmos_1p2v_highvt_hg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_highvt_sbc (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_sbc_as ( nf , w ) |
| + ad = swf_fet_sbc_as ( nf , w ) |
| + pd = swf_fet_sbc_ps ( nf , w ) |
| + ps = swf_fet_sbc_ps ( nf , w ) |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp_sbc (nf) |
| + psbcp = swf_psbcp_sbc (nf) |
| + agbcp = swf_agbcp_sbc (nf) |
| + agbcp2 = swf_agbcp_sbc (nf) |
| + aebcp = swf_aebcp_sbc (nf) |
| |
| |
| nmos_1p2v_highvt_sbc (d g s b x) base_nmos_1p2v_highvt_bodytie |
| + swx_align_poly = 0 nbc=0 |
| + l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nmos_1p2v_highvt_sbc |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_highvt (d g s b) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.255u |
| + swx_insidew_ds = 0.28u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| + aebcp = swx_active_area - (as+ad) |
| |
| |
| nmos_1p2v_highvt (d g s b) ps_nsoi2_lls |
| + l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps |
| + aebcp=aebcp |
| |
| ends nmos_1p2v_highvt |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_highvt_tg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 1 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| |
| |
| nmos_1p2v_highvt_tg (d g s b x) base_nmos_1p2v_highvt_tg |
| + l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc |
| + w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| + delvto = sw_vth0_nmos_highvt + 0.1 |
| |
| |
| model base_nmos_1p2v_highvt_tg bsimsoi |
| //*** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 minr = 1E-60 type = n |
| //*** Geometry Range Parameter *** |
| +lmax = 6E-7 wmax = 5.1E-6 |
| //*** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.5838 bdos = 1.2 |
| //*** Vth Related Parameter *** |
| +vth0 = 0.468 k1 = 0.145671 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.203174 k3 = 0 |
| +k3b = 0 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 9.8E-8 dvt0 = 0.8815 dvt1 = 0.49265 |
| +dvt2 = -0.032 dvt0w = 0.032 dvt1w = 0 |
| +dvt2w = 0 dvtp0 = 1.3E-7 dvtp1 = 0 |
| +dvtp2 = 0 dvtp3 = 0 dvtp4 = 0 |
| +nlx = 1.74E-7 |
| //*** Mobility Related Parameter *** |
| +u0 = 129 * sw_u0_nmos_highvt ua = 0 ub = 0 |
| +uc = 0 vsat = 3.7E4 lvsat = -396 |
| +wvsat = 2.304E3 a0 = 0.22824 ags = 0 |
| +b0 = 0 b1 = 0 keta = 0 |
| +ketas = 0 a1 = 0 a2 = 0.99 |
| +rdsw = 60 * sw_rdsw_nmos_highvt prwb = 0 prwg = 0 |
| +wr = 0.85 |
| //*** Subthreshold Related Parameter *** |
| +voff = -3.47449E-2 lvoff = -3.1536E-3 wvoff = 3.942E-3 |
| +nfactor = 1.2 eta0 = 1.97064E-2 etab = 0 |
| +dsub = 0.0305 cit = 0 cdsc = 6.57E-3 |
| +cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = 1E-9 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 1.7 lpclm = 0 wpclm = 0.25 |
| +pdiblc1 = 0.01 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = 0 delta = 7.5E-3 |
| +alpha0 = 1E-8 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0 sii2 = 0 |
| +siid = 0 agidl = 3.5E-13 lagidl = -1E-14 |
| +wagidl = 3E-14 bgidl = 1E8 cgidl = 0 |
| +egidl = 0.36 ntun = 10 ndiode = 1.5 |
| +ndioded = 1.5 nrecf0 = 1.6 nrecf0d = 1.6 |
| +nrecr0 = 10 nrecr0d = 10 isbjt = 1E-5 |
| +idbjt = 1E-5 isdif = 5.13E-8 iddif = 4.5E-8 |
| +isrec = 1E-4 idrec = 1E-4 istun = 1E-5 |
| +ln = 1E-11 vrec0 = 0.075 vtun0 = 0 |
| +nbjt = 1.215 lbjt0 = 2E-7 vabjt = 9.7 |
| +aely = 0 ahli = 1E-15 rbody = 10 |
| +rbsh = 100 rhalo = 1E15 minv = 1.088 |
| +lminv = -0.017 wminv = 0.118 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 1.45236E-2 bigc = 0 cigc = 1E-3 |
| +aigsd = 1.12149E-2 laigsd = 0 bigsd = 3.99425E-3 |
| +cigsd = 0.12088 nigc = 4 pigcd = 0.5 |
| +dlcig = 1E-9 toxqm = 3.1E-9*swr_tox_lv ntox = 1.024 |
| +toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.35 |
| +betagb1 = 1E-4 vgb1 = 200 vevb = 0.3 |
| +alphagb2 = 0.6136 betagb2 = 0.06 vgb2 = 200 |
| +vecb = 3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.36E-10/swr_tox_lv cgdo = 3.36E-10/swr_tox_lv |
| +cgeo = 1E-10/swr_tox_lv cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6 |
| +vsdfb = -5 vsdth = -3 csdmin = 1E-4 |
| +cgsl = 4.5E-11/swr_tox_lv cgdl = 4.5E-11/swr_tox_lv ckappa = 0.6 |
| +cf = 0 clc = 5E-7 cle = 0.6 |
| +dlc = 3.7855E-8 llc = 0 lwc = 0 |
| +lwlc = 0 dlbg = 0 dwc = 0 |
| +wlc = 0 wwc = 0 wwlc = 0 |
| +dwbc = 9.102E-8 delvt = 0 ldelvt = -8E-3 |
| +wdelvt = 7.2E-3 fbody = 0 moin = 15 |
| +cfrcoeff = 1 noff = 1 voffcv = -0.2 |
| +minvcv = 0.06 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -1.5 kt1 = -0.231 |
| +kt1l = -2E-8 kt2 = 0.022 ua1 = 1E-9 |
| +ub1 = -1E-18 uc1 = -5.6E-11 at = 1E4 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| //*** Unknown Parameters *** |
| +gatetype = h dskip = yes |
| |
| |
| ends nmos_1p2v_highvt_tg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_lowvt_hg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 2 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| |
| |
| nmos_1p2v_lowvt_hg (d g s b x) base_nmos_1p2v_lowvt_bodytie |
| + swx_align_poly=0 nbc=nbc |
| + l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nmos_1p2v_lowvt_hg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_lowvt_sbc (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_sbc_as ( nf , w ) |
| + ad = swf_fet_sbc_as ( nf , w ) |
| + pd = swf_fet_sbc_ps ( nf , w ) |
| + ps = swf_fet_sbc_ps ( nf , w ) |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp_sbc (nf) |
| + psbcp = swf_psbcp_sbc (nf) |
| + agbcp = swf_agbcp_sbc (nf) |
| + agbcp2 = swf_agbcp_sbc (nf) |
| + aebcp = swf_aebcp_sbc (nf) |
| |
| |
| nmos_1p2v_lowvt_sbc (d g s b x) base_nmos_1p2v_lowvt_bodytie |
| + swx_align_poly=0 nbc=0 |
| + l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nmos_1p2v_lowvt_sbc |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_lowvt (d g s b) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.255u |
| + swx_insidew_ds = 0.28u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| + aebcp = swx_active_area - (as+ad) |
| |
| |
| nmos_1p2v_lowvt (d g s b) ps_nsoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps |
| +aebcp=aebcp |
| |
| ends nmos_1p2v_lowvt |
| ****************************************************************** |
| |
| inline subckt nmos_1p2v_lowvt_tg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 1 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| // Target adjustments |
| + swx_vth0 = -0.095 |
| + swx_wvth0 = 1.3 |
| + swx_lvth0 = 1.4 |
| + swx_u0 = 1.05 |
| + swx_vsat = 1.05 |
| + swx_wint = -2e-8 |
| + swx_cg_tg = 0.816 // H-gate data extra H-bar overlap correction |
| |
| nmos_1p2v_lowvt_tg (d g s b x) base_nmos_1p2v_lowvt_tg |
| + l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc |
| + w=(w-sw_dvar_active-sw_dvar_polycd)*nf |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| + delvto = sw_vth0_nmos_lowvt |
| |
| model base_nmos_1p2v_lowvt_tg bsimsoi |
| //*** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 0 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 1 type = n |
| //*** Geometry Range Parameter *** |
| +lmin = 5E-8 lmax = 4.1E-6 wmin = 2E-7 |
| +wmax = 5.1E-6 |
| //*** Process Parameter *** |
| +tsi = 3E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1.5E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.034 bdos = 0.6 |
| //*** Vth Related Parameter *** |
| +vth0 = 0.353 + swx_vth0 |
| +lvth0 = 3.7E-3*swx_lvth0 |
| +wvth0 = 3.13568E-2*(1+1e7*sw_align_poly)*swx_wvth0 |
| +pvth0 = -2.3E-3 k1 = 0.2 k1w1 = 0 |
| +k1w2 = 0 k2 = 0.2245 k3 = 76.9 |
| +k3b = 434.4 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 1.581E-7 dvt0 = 2.2 ldvt0 = 0 |
| +wdvt0 = 0.04 dvt1 = 0.6136 dvt2 = -0.032 |
| +dvt0w = 0 dvt1w = 0 dvt2w = 0 |
| +nlx = 1.74E-7 |
| //*** Mobility Related Parameter *** |
| +u0 = 187.282057 * sw_u0_nmos_lowvt * swx_u0 |
| +lu0 = -4.275293 wu0 = 4.62 |
| +pu0 = -0.2998 ua = 1E-10 ub = 2.5E-19 |
| +eu = 1.67 vsat = 4.29536E5 *swx_vsat lvsat = -2.365248E4 |
| +wvsat = 2.58825E3 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 77.4 * sw_rdsw_nmos_lowvt wrdsw = -7.92 |
| +prwb = 0 prwg = 0 |
| //*** Subthreshold Related Parameter *** |
| +voff = -0.09 lvoff = -8.512E-3 wvoff = -8.337135E-3 |
| +pvoff = 2.4342E-4 nfactor = 0.282395 lnfactor = 0.057 |
| +eta0 = 0 leta0 = 1.875E-3 etab = 0 |
| +dsub = 0.05 cit = 0 cdsc = 8.64E-3 |
| +cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = 1E-8 ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = 0 + swx_wint |
| +dwg = 0 dwb = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 1 lpclm = 0 wpclm = 0 |
| +pdiblc1 = 0.021 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = -0.12 delta = 0.02 |
| +cgidl = 2 egidl = 1 ntun = 10 |
| +ndiode = 1 ndioded = 1 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8 |
| +iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-11 vrec0 = 0.075 |
| +vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7 |
| +vabjt = 9.7 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = -0.3875*1.6 lminv = 0.025*0.9 wminv = -0.09 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.43 bigc = 0 cigc = 0.0273 |
| +aigsd = 0.011528 bigsd = 7E-4 cigsd = 9.00909E-2 |
| +nigc = 4 pigcd = 0.5 poxedge = 1 |
| +dlcig = 8.6E-10 toxqm = 1.8E-9 ntox = 1.024 |
| +toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.64 |
| +betagb1 = 0 vgb1 = 200 vevb = 0.3 |
| +alphagb2 = 1.0136 betagb2 = 0.06 vgb2 = 200 |
| +vecb = 3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.2648E-10/swr_tox_lv*swx_cg_tg cgdo = 3.2648E-10/swr_tox_lv*swx_cg_tg |
| +cgeo = 2.3E-10/swr_tox_lv*swx_cg_tg |
| +cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6 |
| +vsdfb = -5 vsdth = -3 csdmin = 1E-4 |
| +cgsl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg |
| +cgdl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg |
| +ckappa = 0.6 cf = 0 clc = 5E-7 |
| +cle = 0.6 dlc = 3.92E-8 llc = 0 |
| +dlbg = 0 dwc = 0 dwbc = 8E-8 |
| +delvt = 3.39434E-2 ldelvt = -7.094297E-3 wdelvt = 0.01476 |
| +fbody = 0 noff = 0.63 voffcv = -0.189504 |
| +minvcv = 0.507402 lminvcv = 0.3 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -1.26 kt1 = -0.1358 |
| +kt1l = 3E-9 kt2 = 0.022 ua1 = 0 |
| +ub1 = 0 uc1 = -5.6E-11 at = 0 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| ends nmos_1p2v_lowvt_tg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_1p8v_sbc (d g s e p) |
| |
| parameters l=0.2u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical, instance parameters: |
| parameters |
| + as = swx_total_sarea * 0.5 |
| + ad = swx_total_darea * 0.5 |
| + pd = swx_total_dperim * 0.5 |
| + ps = swx_total_sperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.15e-6 * nf |
| + psbcp = 0 |
| + agbcp = 0.15e-6 * 0.075e-6 * nf |
| + agbcp2 = 0.15e-6 * 0.075e-6 * nf |
| + aebcp = 4*0.15e-6*0.225e-6 |
| // + aebcp = swx_active_area - (as+ad) |
| |
| |
| nmos_1p8v_sbc (d g s e p) nmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| ends nthick_sbc |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt nmos_1p8v_tg (d g s e p) |
| |
| parameters l=0.2u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.5*(swx_total_sdperim-2*w) |
| + psbcp = 0.5*(swx_total_sdperim-2*w) |
| + agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| // + aebcp = swx_active_area - (as+ad) |
| |
| nmos_1p8v_tg (d g s e p) nmos_1p8v_base l=l |
| + w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly |
| + nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nthick_tg |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt nmos_1p8v_hg (d g s e p) |
| |
| parameters l=0.2u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = swx_total_sdperim-2*w |
| + psbcp = swx_total_sdperim-2*w |
| + agbcp = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| // + aebcp = swx_active_area - (as+ad) |
| |
| |
| nmos_1p8v_hg (d g s e p) nmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nthick_hg |
| |
| |
| // =========================================================================== |
| |
| inline subckt nmos_1p8v_base (d g s e p) |
| |
| parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp |
| |
| nmos_1p8v_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| model nmosthick bsimsoi |
| //*** Flag Parameter *** |
| +version = 4.5 soimod = 0 shmod = 1 |
| +binunit = 1 paramchk = 0 mobmod = 4 |
| +capmod = 3 rdsmod = 1 igcmod = 1 |
| +igbmod = 1 rgatemod = 1 rbodymod = 0 |
| +fnoimod = 1 tnoimod = 0 mtrlmod = 0 |
| +vgstcvmod = 1 gidlmod = 0 iiimod = 0 |
| +fdmod = 0 minr = 1E-60 type = n |
| //*** Geometry Range Parameter *** |
| +lmin = 0.15u lmax = 0.4u wmin = 0 |
| +wmax = 1 |
| //*** Process Parameter *** |
| +tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv |
| +dtoxcv = 0 xj = 3E-8 |
| +nch = 5E17 nsub = 5E14 ngate = 1.4E20 |
| +nsd = 5E20 eot = 6.2E-9 epsrox = 3.9 |
| +vddeot = 1.5 leffeot = 1 weffeot = 10 |
| +tempeot = 300.03 phig = 4.05 easub = 2.268 |
| +epsrsub = 5.85 epsrgate = 6.669 ni0sub = 6.000014E15 |
| +bg0sub = 0.833106 ados = 2.258187 bdos = 0.895351 |
| +etsi = 3.06E-8 |
| //*** Vth Related Parameter *** |
| +vth0 = 0.669911 + sw_vth0_nthick k1 = 0.85065 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.0186 k3 = 0 |
| +k3b = 0 kb1 = 1 w0 = 2.5E-6 |
| +lpe0 = 1.319843E-8 lpeb = 0 dvt0 = 0 |
| +dvt1 = 0.795 dvt2 = -0.032 dvt0w = 0 |
| +dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1 |
| +dvtp0 = 0 dvtp1 = 0 dvtp2 = 0 |
| +dvtp3 = 0 dvtp4 = 0 vsce = 0 |
| +cdsbs = 0 |
| //*** Mobility Related Parameter *** |
| +u0 = 1.50207E-2 * sw_u0_nthick ua = 2.25E-9 ub = 5.87E-19 |
| +uc = -4.65E-11 ud = 0 eu = 1.67 |
| +ucs = 1.67 vsat = 4.975669E4 lvsat = 3.936906E3 |
| +a0 = 0.106174 la0 = 5.92427E-2 ags = -0.674281 |
| +lags = 0.163408 b0 = 0 b1 = 0 |
| +keta = -0.6 lketa = 0 ketas = 0 |
| +a1 = 0 a2 = 1 rdsw = 168 * sw_rdsw_nthick |
| +rdw = 50 rdwmin = 0 rsw = 50 |
| +rswmin = 0 prwb = 0 prwg = 0 |
| +wr = 1 |
| //*** Subthreshold Related Parameter *** |
| +voff = 0 lvoff = -3.15587E-2 nfactor = 0.784 |
| +eta0 = 0.09 leta0 = 0 etab = -0.07 |
| +eta0cv = 0.08 etabcv = -0.07 dsub = 0.56 |
| +cit = 3.62E-4 cdsc = 2.4E-4 cdscb = 0 |
| +cdscd = 0 |
| //*** dW and dL Parameter *** |
| +lint = 0 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 0 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 xw = 0 |
| +xl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 2.924809 pdiblc1 = 1.95E-10 pdiblc2 = 4.3E-3 |
| +pdiblcb = 0 drout = 0.6104 pvag = -0.590676 |
| +delta = 8.3E-3 alpha0 = 0 fbjtii = 0 |
| +beta0 = 0 beta1 = 0 beta2 = 0.1 |
| +vdsatii0 = 0.9 tii = 0 lii = 0 |
| +esatii = 1E7 sii0 = 0.5 sii1 = 0.1 |
| +sii2 = 0 siid = 0 agidl = 0 |
| +bgidl = 2.3E9 cgidl = 0.5 egidl = 1.2 |
| +rgidl = 1 kgidl = 0 fgidl = 0 |
| +agisl = 0 bgisl = 2.3E9 cgisl = 0 |
| +egisl = 1.2 rgisl = 1 kgisl = 0 |
| +fgisl = 0 ntun = 10 ntund = 10 |
| +ndiode = 1 ndioded = 1 nrecf0 = 2 |
| +nrecf0d = 2 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-6 idbjt = 1E-6 isdif = 0 |
| +iddif = 0 isrec = 1E-5 idrec = 1E-5 |
| +istun = 0 idtun = 0 ln = 2E-6 |
| +vrec0 = 0 vrec0d = 0 vtun0 = 0 |
| +vtun0d = 0 nbjt = 1 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 0 |
| +ahlid = 0 rbody = 0 rbsh = 0 |
| +rsh = 0 rhalo = 1E15 pdits = 1E-20 |
| +pditsl = 0 pditsd = 0 fprout = 0 |
| +minv = 1.23 frbody = 1 ebjtii = 0 |
| +cbjtii = 0 vbci = 0 abjtii = 0 |
| +mbjtii = 0.4 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.43 bigc = 0.054 cigc = 0.075 |
| +aigsd = 0.43 bigsd = 0.054 cigsd = 0.075 |
| +nigc = 1 pigcd = 1 poxedge = 1 |
| +dlcig = 0 toxqm = 1E-8 ntox = 1 |
| +toxref = 6.2E-9 ebg = 1.2 alphagb1 = 0.35 |
| +betagb1 = 0.03 vgb1 = 300 vevb = 0.075 |
| +alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17 |
| +vecb = 0.026 voxh = 5 deltavox = 5E-3 |
| +aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 5.767067E-11/swr_tox_hv cgdo = 5.767067E-11/swr_tox_hv |
| +cgeo = 2.834954E-11/swr_tox_hv cjswg = 1E-10/sqrt(sw_rdsw_nthick) mjswg = 0.6 |
| +cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick) cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick) ckappa = 7.880675 |
| +cf = 0 clc = 3.05E-7 cle = 0.6 |
| +dlc = 2.124684E-8 llc = 0 dlbg = 1E-8 |
| +dwc = 0 delvt = 0 fbody = 0.948281 |
| +moin = 25 voffcv = 0 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -2.278199 lute = -0.076915 |
| +ucste = -4.775E-3 ud1 = 0 kt1 = -0.455906 |
| +kt1l = -8.0494E-10 kt2 = 0.022 ua1 = 2.316625E-9 |
| +ub1 = -7.61E-18 uc1 = -5.6E-11 at = 2.4E4 |
| +lat = 0 tcjswg = 0 tpbswg = 0 |
| +tcjswgd = 0 tpbswgd = 0 cth0 = 1E-5 |
| +prt = 0.474662 rth0 = 0 ntrecf = 0 |
| +ntrecr = 0 xbjt = 1 xdif = 1 |
| +xrec = 1 xtun = 0 xdifd = 1 |
| +xrecd = 1 xtund = 0 wth0 = 0 |
| +tvbci = 0 tbgasub = 7.02E-4 tbgbsub = 1.108E3 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 1 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.25 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| +rbsb = 50 rbdb = 50 gbmin = 1E-12 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| //*** Stress Effect Related Parameter *** |
| +saref = 1E-6 sbref = 1E-6 wlod = 0 |
| +ku0 = 0 kvsat = 0 kvth0 = 0 |
| +tku0 = 0 llodku0 = 0 wlodku0 = 0 |
| +llodvth = 0 wlodvth = 0 stk2 = 0 |
| +lodk2 = 1 steta0 = 0 lodeta0 = 1 |
| +steta0cv = 0 lodeta0cv = 1 |
| //***Material Properties*** |
| +eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7 |
| +bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10 |
| +agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12 |
| +bgbc2p = 7.4567E11 vtm00 = 0.026 |
| |
| |
| ends nmosthick |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt nmos_3p3v_sbc (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical, instance parameters: |
| parameters |
| + as = swx_total_sarea * 0.5 |
| + ad = swx_total_darea * 0.5 |
| + pd = swx_total_dperim * 0.5 |
| + ps = swx_total_sperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.15e-6 * nf |
| + psbcp = 0 |
| + agbcp = 0.15e-6 * 0.075e-6 * nf |
| + agbcp2 = 0.15e-6 * 0.075e-6 * nf |
| + aebcp = 4*0.15e-6*0.225e-6 |
| // + aebcp = swx_active_area - (as+ad) |
| |
| |
| nmos_3p3v_sbc (d g s e p) nthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| ends nthick_sbc |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt nmos_3p3v_tg (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.5*(swx_total_sdperim-2*w) |
| + psbcp = 0.5*(swx_total_sdperim-2*w) |
| + agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| // + aebcp = swx_active_area - (as+ad) |
| |
| nmos_3p3v_tg (d g s e p) nthick_base l=l |
| + w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly |
| + nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nthick_tg |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt nmos_3p3v_hg (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = swx_total_sdperim-2*w |
| + psbcp = swx_total_sdperim-2*w |
| + agbcp = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| // + aebcp = swx_active_area - (as+ad) |
| |
| |
| nmos_3p3v_hg (d g s e p) nthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends nthick_hg |
| |
| |
| // =========================================================================== |
| |
| inline subckt nthick_base (d g s e p) |
| |
| parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp |
| |
| nthick_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| model nmosthick bsimsoi |
| //*** Flag Parameter *** |
| +version = 4.5 soimod = 0 shmod = 1 |
| +binunit = 1 paramchk = 0 mobmod = 4 |
| +capmod = 3 rdsmod = 0 igcmod = 1 |
| +igbmod = 1 rgatemod = 1 rbodymod = 0 |
| +fnoimod = 1 tnoimod = 0 mtrlmod = 0 |
| +vgstcvmod = 1 gidlmod = 0 iiimod = 0 |
| +fdmod = 0 minr = 1E-60 type = n |
| //*** Geometry Range Parameter *** |
| +lmin = 0 lmax = 5.1 wmin = 0 |
| +wmax = 1 |
| //*** Process Parameter *** |
| +tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv |
| + dtoxcv = 0 xj = 3E-8 |
| +nch = 5E17 nsub = 5E14 ngate = 1.4E20 |
| +nsd = 5E20 eot = 6.2E-9 epsrox = 3.9 |
| +vddeot = 1.5 leffeot = 1 weffeot = 10 |
| +tempeot = 300.03 phig = 4.05 easub = 2.268 |
| +epsrsub = 5.85 epsrgate = 6.669 ni0sub = 6.000014E15 |
| +bg0sub = 0.833106 ados = 2.258187 bdos = 0.895351 |
| +etsi = 3.06E-8 |
| //*** Vth Related Parameter *** |
| +vth0 = 0.707 + sw_vth0_nthick k1 = 0.795 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.0186 k3 = 0 |
| +k3b = 0 kb1 = 1 w0 = 2.5E-6 |
| +lpe0 = 9.7E-9 lpeb = 0 dvt0 = 2.266 |
| +dvt1 = 0.795 dvt2 = -0.032 dvt0w = 0 |
| +dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1 |
| +dvtp0 = 0 dvtp1 = 0 dvtp2 = 0 |
| +dvtp3 = 0 dvtp4 = 0 vsce = 0 |
| +cdsbs = 0 |
| //*** Mobility Related Parameter *** |
| +u0 = 1.59795E-2*sw_u0_nthick ua = 2.25E-9 ub = 5.87E-19 |
| +uc = -4.65E-11 ud = 0 eu = 1.67 |
| +ucs = 1.67 vsat = 1.099198E5 lvsat = -1.017526E4 |
| +a0 = 0.106174 la0 = 5.92427E-2 ags = -0.674281 |
| +lags = 0.163408 b0 = 0 b1 = 0 |
| +keta = -0.6 lketa = 0 ketas = 0 |
| +a1 = 0 a2 = 1 rdsw = 112 * sw_rdsw_nthick |
| +rdw = 50 rdwmin = 0 rsw = 50 |
| +rswmin = 0 prwb = 0 prwg = 0 |
| +wr = 1 |
| //*** Subthreshold Related Parameter *** |
| +voff = 0 lvoff = -3.15587E-2 nfactor = 1.12 |
| +eta0 = 1E-3 etab = -0.07 eta0cv = 0.08 |
| +etabcv = -0.07 dsub = 0.56 cit = 3.62E-4 |
| +cdsc = 2.4E-4 cdscb = 0 cdscd = 0 |
| //*** dW and dL Parameter *** |
| +lint = 0 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 0 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 xw = 0 |
| +xl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 2.924809 pdiblc1 = 1.95E-10 pdiblc2 = 4.3E-3 |
| +pdiblcb = 0 drout = 0.6104 pvag = -0.590676 |
| +delta = 8.3E-3 alpha0 = 0 fbjtii = 0 |
| +beta0 = 0 beta1 = 0 beta2 = 0.1 |
| +vdsatii0 = 0.9 tii = 0 lii = 0 |
| +esatii = 1E7 sii0 = 0.5 sii1 = 0.1 |
| +sii2 = 0 siid = 0 agidl = 0 |
| +bgidl = 2.3E9 cgidl = 0.5 egidl = 1.2 |
| +rgidl = 1 kgidl = 0 fgidl = 0 |
| +agisl = 0 bgisl = 2.3E9 cgisl = 0 |
| +egisl = 1.2 rgisl = 1 kgisl = 0 |
| +fgisl = 0 ntun = 10 ntund = 10 |
| +ndiode = 1 ndioded = 1 nrecf0 = 2 |
| +nrecf0d = 2 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-6 idbjt = 1E-6 isdif = 0 |
| +iddif = 0 isrec = 1E-5 idrec = 1E-5 |
| +istun = 0 idtun = 0 ln = 2E-6 |
| +vrec0 = 0 vrec0d = 0 vtun0 = 0 |
| +vtun0d = 0 nbjt = 1 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 0 |
| +ahlid = 0 rbody = 1000 rbsh = 0 |
| +rsh = 0 rhalo = 1E15 pdits = 1E-20 |
| +pditsl = 0 pditsd = 0 fprout = 0 |
| +minv = 0 frbody = 1 ebjtii = 0 |
| +cbjtii = 0 vbci = 0 abjtii = 0 |
| +mbjtii = 0.4 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.43 bigc = 0.054 cigc = 0.075 |
| +aigsd = 0.43 bigsd = 0.054 cigsd = 0.075 |
| +nigc = 1 pigcd = 1 poxedge = 1 |
| +dlcig = 0 toxqm = 1E-8 ntox = 1 |
| +toxref = 6.2E-9 ebg = 1.2 alphagb1 = 0.35 |
| +betagb1 = 0.03 vgb1 = 300 vevb = 0.075 |
| +alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17 |
| +vecb = 0.026 voxh = 5 deltavox = 5E-3 |
| +aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 5.767067E-11/swr_tox_hv cgdo = 5.767067E-11/swr_tox_hv |
| +cgeo = 2.834954E-11/swr_tox_hv cjswg = 1E-10/sqrt(sw_rdsw_nthick) mjswg = 0.6 |
| +cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick) cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick) ckappa = 7.880675 |
| +cf = 0 clc = 3.05E-7 cle = 0.6 |
| +dlc = 2.124684E-8 llc = 0 dlbg = 1E-8 |
| +dwc = 0 delvt = 0 fbody = 0.948281 |
| +moin = 25 voffcv = 0 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -2.15594 lute = 0 |
| +ucste = -4.775E-3 ud1 = 0 kt1 = -5.72707E-2 |
| +kt1l = -8.554249E-8 kt2 = 0.022 ua1 = 2.155E-9 |
| +ub1 = -7.61E-18 uc1 = -5.6E-11 at = 32.04948 |
| +tcjswg = 0 tpbswg = 0 tcjswgd = 0 |
| +tpbswgd = 0 cth0 = 1E-5 prt = 0.474662 |
| +rth0 = 0 ntrecf = 0 ntrecr = 0 |
| +xbjt = 1 xdif = 1 xrec = 1 |
| +xtun = 0 xdifd = 1 xrecd = 1 |
| +xtund = 0 wth0 = 0 tvbci = 0 |
| +tbgasub = 7.02E-4 tbgbsub = 1.108E3 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 1 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.25 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| +rbsb = 50 rbdb = 50 gbmin = 1E-12 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| //*** Stress Effect Related Parameter *** |
| +saref = 1E-6 sbref = 1E-6 wlod = 0 |
| +ku0 = 0 kvsat = 0 kvth0 = 0 |
| +tku0 = 0 llodku0 = 0 wlodku0 = 0 |
| +llodvth = 0 wlodvth = 0 stk2 = 0 |
| +lodk2 = 1 steta0 = 0 lodeta0 = 1 |
| +steta0cv = 0 lodeta0cv = 1 |
| //***Material Properties*** |
| +eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7 |
| +bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10 |
| +agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12 |
| +bgbc2p = 7.4567E11 vtm00 = 0.026 |
| |
| |
| ends nmosthick |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_highvt_hg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 2 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| |
| |
| pmos_1p2v_highvt_hg (d g s b x) base_pmos_1p2v_highvt_hg |
| + nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc |
| + l=l w=(w-2*sw_dvar_polycd) * nf |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| + delvto = sw_vth0_pmos_highvt - 0.05 |
| |
| model base_pmos_1p2v_highvt_hg bsimsoi |
| //*** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 type = p |
| //*** Geometry Range Parameter *** |
| +lmax = 5.1E-6 wmax = 5.1E-6 |
| //*** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| //*** Vth Related Parameter *** |
| +vth0 = -0.62 k1 = 0.5644 k1w1 = -2E-8 |
| +k1w2 = 0 k2 = 0 k3 = -1.84 |
| +k3b = 0 kb1 = 0 w0 = 1E-9 |
| +lpe0 = -1.29E-8 lpeb = -2E-8 dvt0 = 0.64 |
| +dvt1 = 0.21186 dvt2 = 0.391 dvt0w = -0.24 |
| +dvt1w = 1E5 dvt2w = 0 dvtp0 = 1E-8 |
| +dvtp1 = 0 dvtp2 = 0 dvtp3 = 0 |
| +dvtp4 = 0 cdsbs = 1E-3 |
| //*** Mobility Related Parameter *** |
| +u0 = 25 * (sw_u0_pmos_highvt**0.8) ua = 0 ub = 0 |
| +uc = -7.4E-10 vsat = 1E6 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 1 rdsw = 60 *sw_rdsw_pmos_highvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| //*** Subthreshold Related Parameter *** |
| +voff = -0.05256 nfactor = 3.2155 eta0 = 0.074 |
| +etab = -0.07 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = -8E-9 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = 3E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 0.675 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 1E-12 bgidl = 9E8 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 6.155E-4 idbjt = 7E-5 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 0 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 8.8E-3 bigsd = 7E-4 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +toxqm = sw_tox_lv ntox = 4.5 toxref = 1.8e-9 |
| +ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03 |
| +vgb1 = 300 vevb = 0.075 alphagb2 = 0.43 |
| +betagb2 = 0.05 vgb2 = 17 vecb = 0.026 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 5.0e-10/swr_tox_lv cjswg = 8.6E-11/sw_rdsw_pmos_lowvt mjswg = 0.5 |
| +vsdfb = -4 vsdth = -2 csdmin = 1E-4 |
| +cgsl = 3E-10/swr_tox_lv cgdl = 3E-10/swr_tox_lv ckappa = 0.95 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = -3.98159E-8 |
| // +llc = 1.209E-16 lwc = 0 |
| //+lwlc = 0 dlbg = 0 |
| + dwc = -7.8E-8 |
| +delvt = -0.028 fbody = 0 acde = 1 |
| +moin = 500 noff = 1.23 voffcv = -0.5 |
| +minvcv = 0.3 lminvcv = -0.054 wminvcv = 0.3 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -0.6396 ucste = -9.2E-3 |
| +ud1 = 0 kt1 = -0.2755 kt1l = 2.2E-9 |
| +kt2 = -0.3 ua1 = 0 ub1 = 0 |
| +uc1 = 0 at = 3.4E4 tcjswg = 0 |
| +cth0 = 0 prt = 0 rth0 = 0.2 |
| +ntrecf = 0 ntrecr = 0 xbjt = 1.15 |
| +xdif = 1.11 xrec = 0.9 xtun = 0 |
| +xrecd = 1 wth0 = 4E-6 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| //*** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| //*** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| |
| |
| ends pmos_1p2v_highvt_hg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_highvt_sbc (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_sbc_as ( nf , w ) |
| + ad = swf_fet_sbc_as ( nf , w ) |
| + pd = swf_fet_sbc_ps ( nf , w ) |
| + ps = swf_fet_sbc_ps ( nf , w ) |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp_sbc (nf) |
| + psbcp = swf_psbcp_sbc (nf) |
| + agbcp = swf_agbcp_sbc (nf) |
| + agbcp2 = swf_agbcp_sbc (nf) |
| + aebcp = swf_aebcp_sbc (nf) |
| |
| |
| pmos_1p2v_highvt_sbc (d g s b x) base_pmos_1p2v_highvt_bodytie |
| + swx_align_poly = 0 nbc=0 |
| + l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_1p2v_highvt_sbc |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_highvt (d g s b) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.255u |
| + swx_insidew_ds = 0.28u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| |
| |
| pmos_1p2v_highvt (d g s b) ps_psoi2_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps |
| |
| ends pmos_1p2v_highvt |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_highvt_tg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 1 |
| + swx_align_poly = sw_align_poly |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| |
| |
| pmos_1p2v_highvt_tg (d g s b x) base_pmos_1p2v_highvt_tg l=l nf=nf ad=ad as=as pd=pd ps=ps |
| + w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf nbc=nbc |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| + delvto = sw_vth0_pmos_highvt - 0.05 |
| |
| model base_pmos_1p2v_highvt_tg bsimsoi |
| //*** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 type = p |
| //*** Geometry Range Parameter *** |
| +lmax = 5.1E-6 wmax = 5.1E-6 |
| //*** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| //*** Vth Related Parameter *** |
| +vth0 = -0.62 k1 = 0.5644 k1w1 = -2E-8 |
| +k1w2 = 0 k2 = 0 k3 = -1.84 |
| +k3b = 0 kb1 = 0 w0 = 1E-9 |
| +lpe0 = -1.29E-8 lpeb = -2E-8 dvt0 = 0.64 |
| +dvt1 = 0.21186 dvt2 = 0.391 dvt0w = -0.24 |
| +dvt1w = 1E5 dvt2w = 0 dvtp0 = 1E-8 |
| +dvtp1 = 0 dvtp2 = 0 dvtp3 = 0 |
| +dvtp4 = 0 cdsbs = 1E-3 |
| //*** Mobility Related Parameter *** |
| +u0 = 25 * (sw_u0_pmos_highvt**0.8) ua = 0 ub = 0 |
| +uc = -7.4E-10 vsat = 1E6 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 1 rdsw = 60 *sw_rdsw_pmos_highvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| //*** Subthreshold Related Parameter *** |
| +voff = -0.05256 nfactor = 3.2155 eta0 = 0.074 |
| +etab = -0.07 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = -8E-9 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = 3E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 0.675 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 1E-12 bgidl = 9E8 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 6.155E-4 idbjt = 7E-5 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 0 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 8.8E-3 bigsd = 7E-4 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +toxqm = sw_tox_lv ntox = 4.5 toxref = 1.8e-9 |
| +ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03 |
| +vgb1 = 300 vevb = 0.075 alphagb2 = 0.43 |
| +betagb2 = 0.05 vgb2 = 17 vecb = 0.026 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 5.0e-10/swr_tox_lv cjswg = 8.6E-11/sw_rdsw_pmos_lowvt mjswg = 0.5 |
| +vsdfb = -4 vsdth = -2 csdmin = 1E-4 |
| +cgsl = 3E-10/swr_tox_lv cgdl = 3E-10/swr_tox_lv ckappa = 0.95 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = -3.98159E-8 |
| // +llc = 1.209E-16 lwc = 0 |
| //+lwlc = 0 dlbg = 0 |
| + dwc = -7.8E-8 |
| +delvt = -0.028 fbody = 0 acde = 1 |
| +moin = 500 noff = 1.23 voffcv = -0.5 |
| +minvcv = 0.3 lminvcv = -0.054 wminvcv = 0.3 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -0.6396 ucste = -9.2E-3 |
| +ud1 = 0 kt1 = -0.2755 kt1l = 2.2E-9 |
| +kt2 = -0.3 ua1 = 0 ub1 = 0 |
| +uc1 = 0 at = 3.4E4 tcjswg = 0 |
| +cth0 = 0 prt = 0 rth0 = 0.2 |
| +ntrecf = 0 ntrecr = 0 xbjt = 1.15 |
| +xdif = 1.11 xrec = 0.9 xtun = 0 |
| +xrecd = 1 wth0 = 4E-6 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| //*** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| //*** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| |
| |
| ends pmos_1p2v_highvt_hg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_lowvt_hg (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 2 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| |
| |
| pmos_1p2v_lowvt_hg (d g s b x) base_pmos_1p2v_lowvt_bodytie |
| + swx_align_poly=0 nbc=nbc |
| + l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_1p2v_lowvt_hg |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_lowvt_sbc (d g s b x) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_sbc_as ( nf , w ) |
| + ad = swf_fet_sbc_as ( nf , w ) |
| + pd = swf_fet_sbc_ps ( nf , w ) |
| + ps = swf_fet_sbc_ps ( nf , w ) |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp_sbc (nf) |
| + psbcp = swf_psbcp_sbc (nf) |
| + agbcp = swf_agbcp_sbc (nf) |
| + agbcp2 = swf_agbcp_sbc (nf) |
| + aebcp = swf_aebcp_sbc (nf) |
| |
| |
| pmos_1p2v_lowvt_sbc (d g s b x) base_pmos_1p2v_lowvt_bodytie |
| + swx_align_poly=0 nbc=0 |
| + l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_1p2v_lowvt_sbc |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_lowvt (d g s b) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.255u |
| + swx_insidew_ds = 0.28u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| + aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_1p2v_lowvt (d g s b) ps_psoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps |
| +aebcp=aebcp |
| |
| ends pmos_1p2v_lowvt |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt pmos_1p2v_lowvt_tg (d g s e p) |
| |
| parameters l=0.1u w=0.5u nf=1 |
| // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger) |
| parameters |
| + as = swf_fet_as (nf, w) |
| + ad = swf_fet_as (nf, w) |
| + pd = swf_fet_ps (nf, w) |
| + ps = swf_fet_ps (nf, w) |
| + nbc = 1 |
| // gate extra gate capacitance |
| parameters |
| + pdbcp = swf_psbcp (nf, nbc) |
| + psbcp = swf_psbcp (nf, nbc) |
| + agbcp = swf_agbcp (nf, l, nbc) |
| + agbcp2 = swf_agbcp (nf, l, nbc) |
| + aebcp = swf_aebcp (nf, l, nbc) |
| // Refitting adjustment then target adjustments |
| + swx_vth0 = -0.103 |
| + swx_lvth0 = 1.05 |
| + swx_wvth0 = -0.55 |
| + swx_u0 = 0.85 |
| + swx_lu0 = -3 |
| + swx_vsat = 0.8 |
| + swx_lvsat = 500 |
| + swx_wvsat = 2000 |
| + swx_cg_tg = 0.9 |
| |
| |
| pmos_1p2v_lowvt_tg (d g s e p) base_pmos_1p2v_lowvt_tg |
| + l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc |
| + w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| + delvto = sw_vth0_pmos_lowvt |
| |
| model base_pmos_1p2v_lowvt_tg bsimsoi |
| //*** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 type = p |
| //*** Geometry Range Parameter *** |
| +lmax = 4E-7 wmax = 5.1E-6 |
| //*** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| //*** Vth Related Parameter *** |
| +vth0 = -0.245+swx_vth0 lvth0 = -0.014*swx_lvth0 wvth0 = 0.015*swx_wvth0 |
| +k1 = 0.01 k1w1 = 0 k1w2 = 0 |
| +k2 = -0.12 k3 = -5.42 k3b = 0 |
| +kb1 = 0 w0 = 0 lpe0 = -1E-8 |
| +lpeb = 0 dvt0 = 1.145 dvt1 = 0.21684 |
| +dvt2 = 0 dvt0w = 0.056 dvt1w = 1.5E5 |
| +dvt2w = 0 dvtp0 = 0 dvtp1 = 0 |
| +dvtp2 = 0 dvtp3 = 0 dvtp4 = 0 |
| +cdsbs = 1E-3 |
| //*** Mobility Related Parameter *** |
| +u0 = 89.7*sw_u0_pmos_lowvt*swx_u0 |
| +lu0 = -1.4*swx_lu0 |
| +wu0 = -4 |
| +pu0 = 0 ua = 0 ub = 0 |
| +uc = 0 |
| +vsat = 7.2E4*swx_vsat |
| +lvsat = swx_lvsat |
| +wvsat = swx_wvsat |
| +a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 300*sw_rdsw_pmos_lowvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| //*** Subthreshold Related Parameter *** |
| +voff = -0.042048 nfactor = 0.2304 eta0 = 0.0276 |
| +etab = -1E-3 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| //*** dW and dL Parameter *** |
| +lint = -2.743E-8 ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -5.08E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 1.35 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 2E-12 bgidl = 1E9 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 1.5 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 1.8E-3 bigsd = 0 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +toxqm = 10e-9*swr_tox_lv ntox = 4.5 toxref = 1.8E-9 |
| +ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03 |
| +vgb1 = 300 vevb = 0.075 alphagb2 = 0.43 |
| +betagb2 = 0.05 vgb2 = 17 vecb = 0.026 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 2.67976E-10/swr_tox_lv*swx_cg_tg cgdo = 2.67976E-10/swr_tox_lv*swx_cg_tg |
| +cgeo = 2.3e-10/swr_tox_lv*swx_cg_tg cjswg = 1.112401E-10/sw_rdsw_pmos_lowvt mjswg = 0.3 |
| +vsdfb = -4 vsdth = -2 csdmin = 1E-4 |
| +cgsl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg |
| +cgdl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg ckappa = 0.1 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = -2.654244E-8 llc = 0 lwc = 0 |
| +lwlc = 0 dlbg = 0 dwc = 2.814178E-8 |
| +wlc = 0 wwc = 0 wwlc = 0 |
| +delvt = -6.54447E-2 ldelvt = 0.03 fbody = 0 |
| +acde = 1 moin = 500 cfrcoeff = 1 |
| +noff = 1 voffcv = -0.5 minvcv = 0.51 |
| +wminvcv = 4.96175 |
| //*** Temperature coefficient *** |
| +tnom = 22 ute = -1.095 kt1 = -2.41893E-2 |
| +kt1l = -1.345103E-8 kt2 = -0.15 ua1 = 0 |
| +ub1 = 0 uc1 = 0 at = 3.4E4 |
| +tcjswg = 0 cth0 = 1E-6 prt = 0 |
| +rth0 = 0.2 ntrecf = 0 ntrecr = 0 |
| +xbjt = 1.15 xdif = 1.11 xrec = 0.9 |
| +xtun = 0 wth0 = 4E-6 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| //*** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| ends pmos_1p2v_lowvt_tg |
| ****************************************************************** |
| ****************************************************************** |
| // ----------------------------------------------------------- |
| |
| inline subckt pmos_1p8v_sbc (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical, instance parameters: |
| parameters |
| + as = swx_total_sarea * 0.5 |
| + ad = swx_total_darea * 0.5 |
| + pd = swx_total_dperim * 0.5 |
| + ps = swx_total_sperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.15e-6 * nf |
| + psbcp = 0 |
| + agbcp = 0.15e-6 * 0.075e-6 * nf |
| + agbcp2 = 0.15e-6 * 0.075e-6 * nf |
| + aebcp = 4*0.15e-6*0.225e-6 |
| // + aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_1p8v_sbc (d g s e p) pmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_1p8v_sbc |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt pmos_1p8v_tg (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.5*(swx_total_sdperim-2*w) |
| + psbcp = 0.5*(swx_total_sdperim-2*w) |
| + agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| //+ aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_1p8v_tg (d g s e p) pmos_1p8v_base l=l |
| + w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly |
| + nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_1p8v_tg |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt pmos_1p8v_hg (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| + pdbcp = swx_total_sdperim-2*w |
| + psbcp = swx_total_sdperim-2*w |
| + agbcp = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| //+ aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_1p8v_hg (d g s e p) pmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_1p8v_hg |
| |
| |
| // =========================================================================== |
| |
| inline subckt pmos_1p8v_base (d g s e p) |
| |
| parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp |
| |
| pmos_1p8v_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| model pmosthick bsimsoi |
| //*** Flag Parameter *** |
| +version = 4.5 soimod = 0 shmod = 1 |
| +binunit = 1 paramchk = 0 mobmod = 1 |
| +capmod = 3 rdsmod = 1 igcmod = 1 |
| +igbmod = 1 rgatemod = 1 rbodymod = 1 |
| +fnoimod = 1 tnoimod = 0 mtrlmod = 0 |
| +vgstcvmod = 1 gidlmod = 0 iiimod = 0 |
| +fdmod = 0 minr = 1E-60 type = p |
| //*** Geometry Range Parameter *** |
| +lmin = 0.15u lmax = 0.4u wmin = 0.4u |
| +wmax = 1 |
| //*** Process Parameter *** |
| +tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv |
| +dtoxcv = -3.111883E-9 xj = 3E-8 nch = 8E17 |
| +nsub = 5E14 ngate = 3.8E19 nsd = 2E20 |
| +ados = 1.332 bdos = 0.86892 |
| //*** Vth Related Parameter *** |
| +vth0 = -0.466054 + sw_vth0_pthick k1 = 0.388186 k1w1 = 0 |
| +k1w2 = 0 k2 = -5.88086E-2 k3 = 0 |
| +k3b = 0 kb1 = 1 w0 = 2.5E-6 |
| +lpe0 = 2.08067E-7 lpeb = 0 dvt0 = 2.2 |
| +dvt1 = 0.53 dvt2 = -0.032 dvt0w = 0 |
| +dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1 |
| +dvtp0 = 0 dvtp1 = 0 dvtp2 = 0 |
| +dvtp3 = 0 dvtp4 = 0 vsce = 0 |
| +cdsbs = 0 |
| //*** Mobility Related Parameter *** |
| +u0 = 4.7311E-3 * sw_u0_pthick ua = 0 ub = 1.276725E-19 |
| +uc = -2.325E-11 ud = 0 eu = 1 |
| +ucs = 1 vsat = 1.48766E4 lvsat = 1.673617E3 |
| +a0 = 0.105474 la0 = 7.09237E-2 ags = 3.0958 |
| +lags = 0.999946 b0 = 0 b1 = 5.634546E-8 |
| +keta = -0.6 ketas = 0 a1 = 0 |
| +a2 = 1 rdsw = 420.5 * sw_rdsw_pthick rdw = 50 |
| +rdwmin = 0 rsw = 50 rswmin = 0 |
| +prwb = 0 prwg = -3E-5 wr = 1 |
| //*** Subthreshold Related Parameter *** |
| +voff = 0 nfactor = 0.375 eta0 = 0.169852 |
| +leta0 = 2.21911E-2 etab = -0.07 eta0cv = 0.08 |
| +etabcv = -0.07 dsub = 0.825467 ldsub = 0 |
| +cit = 9.782955E-4 cdsc = 2.4E-4 cdscb = 0 |
| +cdscd = 0 |
| //*** dW and dL Parameter *** |
| +lint = 0 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 0 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 xw = 0 |
| +xl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 2.501523 pdiblc1 = 3.84369E-2 pdiblc2 = 1.000168E-5 |
| +pdiblcb = 0 drout = 4.316444 ldrout = 0 |
| +pvag = 4.83206E-2 delta = 0.025 alpha0 = 0 |
| +fbjtii = 0 beta0 = 0 beta1 = 0 |
| +beta2 = 0.1 vdsatii0 = 0.9 tii = 0 |
| +lii = 0 esatii = 1E7 sii0 = 0.5 |
| +sii1 = 0.1 sii2 = 0 siid = 0 |
| +agidl = 0 bgidl = 2.3E9 cgidl = 0.5 |
| +egidl = 1.2 rgidl = 1 kgidl = 0 |
| +fgidl = 0 agisl = 0 bgisl = 2.3E9 |
| +cgisl = 0 egisl = 1.2 rgisl = 1 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 1E3 rbsh = 100 rhalo = 1E15 |
| +minv = 1.02 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.31 bigc = 0.024 cigc = 0.03 |
| +aigsd = 0.31 bigsd = 0.024 cigsd = 0.03 |
| +nigc = 1 pigcd = 1 poxedge = 1 |
| +dlcig = 0 toxqm = 1E-8 ntox = 1 |
| +toxref = 2.5E-9 ebg = 1.2 alphagb1 = 0.35 |
| +betagb1 = 0.03 vgb1 = 300 vevb = 0.075 |
| +alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17 |
| +vecb = 0.026 voxh = 5 deltavox = 5E-3 |
| +aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 2.659147E-10/swr_tox_hv cgdo = 2.659147E-10/swr_tox_hv |
| +cgeo = 3E-10/swr_tox_hv cjswg = 1E-10 mjswg = 0.5 |
| +cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick) cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick) ckappa = 0.24 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = -1.469717E-8 llc = 0 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0.39 |
| +acde = 0.5 voffcv = -0.5 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -1.283217 ucste = -4.775E-3 |
| +ud1 = 0 kt1 = -7.39318E-2 kt1l = -4.44052E-8 |
| +kt2 = 0 ua1 = 3.000582E-9 ub1 = -3.824957E-18 |
| +uc1 = -5.6E-11 at = 2.93335E4 tcjswg = 0 |
| +tpbswg = 0 tcjswgd = 0 tpbswgd = 0 |
| +cth0 = 1E-5 prt = 0 rth0 = 0 |
| +ntrecf = 0 ntrecr = 0 xbjt = 0.7 |
| +xdif = 1 xrec = 1 xtun = 0 |
| +xdifd = 1 xrecd = 1 xtund = 0 |
| +wth0 = 0 tvbci = 0 tbgasub = 7.02E-4 |
| +tbgbsub = 1.108E3 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| +rbsb = 50 rbdb = 50 gbmin = 1E-12 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| //*** Stress Effect Related Parameter *** |
| +saref = 1E-6 sbref = 1E-6 wlod = 0 |
| +ku0 = 0 kvsat = 0 kvth0 = 0 |
| +tku0 = 0 llodku0 = 0 wlodku0 = 0 |
| +llodvth = 0 wlodvth = 0 stk2 = 0 |
| +lodk2 = 1 steta0 = 0 lodeta0 = 1 |
| +steta0cv = 0 lodeta0cv = 1 |
| //***Material Properties*** |
| +eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7 |
| +bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10 |
| +agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12 |
| +bgbc2p = 7.4567E11 vtm00 = 0.026 |
| |
| |
| |
| ends pmos_1p8v_base |
| ****************************************************************** |
| ****************************************************************** |
| // ----------------------------------------------------------- |
| |
| inline subckt pmos_3p3v_sbc (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical, instance parameters: |
| parameters |
| + as = swx_total_sarea * 0.5 |
| + ad = swx_total_darea * 0.5 |
| + pd = swx_total_dperim * 0.5 |
| + ps = swx_total_sperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.15e-6 * nf |
| + psbcp = 0 |
| + agbcp = 0.15e-6 * 0.075e-6 * nf |
| + agbcp2 = 0.15e-6 * 0.075e-6 * nf |
| + aebcp = 4*0.15e-6*0.225e-6 |
| // + aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_3p3v_sbc (d g s e p) pthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_3p3v_sbc |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt pmos_3p3v_tg (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = 0.5*(swx_total_sdperim-2*w) |
| + psbcp = 0.5*(swx_total_sdperim-2*w) |
| + agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| //+ aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_3p3v_tg (d g s e p) pthick_base l=l |
| + w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly |
| + nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_3p3v_tg |
| |
| // ----------------------------------------------------------- |
| |
| inline subckt pmos_3p3v_hg (d g s e p) |
| |
| parameters l=0.5u w=1u nf=1 |
| // Internal parameters |
| parameters |
| + swx_outsidew_ds = 0.23u |
| + swx_insidew_ds = 0.25u |
| + swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds ) |
| + swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds |
| + swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u ) |
| // Taking average since S/D are symmetrical |
| parameters |
| + as = swx_total_sdarea * 0.5 |
| + ad = swx_total_sdarea * 0.5 |
| + pd = swx_total_sdperim * 0.5 |
| + ps = swx_total_sdperim * 0.5 |
| // H-gate extra gate capacitance |
| parameters |
| + pdbcp = swx_total_sdperim-2*w |
| + psbcp = swx_total_sdperim-2*w |
| + agbcp = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6 |
| + aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u ) |
| //+ aebcp = swx_active_area - (as+ad) |
| |
| |
| pmos_3p3v_hg (d g s e p) pthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| |
| ends pmos_3p3v_hg |
| |
| |
| // =========================================================================== |
| |
| inline subckt pthick_base (d g s e p) |
| |
| parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp |
| |
| pthick_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps |
| + pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp |
| |
| model pmosthick bsimsoi |
| //*** Flag Parameter *** |
| +version = 4.5 soimod = 0 shmod = 1 |
| +binunit = 1 paramchk = 0 mobmod = 1 |
| +capmod = 3 rdsmod = 1 igcmod = 1 |
| +igbmod = 1 rgatemod = 1 rbodymod = 1 |
| +fnoimod = 1 tnoimod = 0 mtrlmod = 0 |
| +vgstcvmod = 1 gidlmod = 0 iiimod = 0 |
| +fdmod = 0 minr = 1E-60 type = p |
| //*** Geometry Range Parameter *** |
| +lmin = 0 lmax = 1 wmin = 0 |
| +wmax = 1 |
| //*** Process Parameter *** |
| +tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv |
| +dtoxcv = -3.111883E-9 xj = 3E-8 nch = 8E17 |
| +nsub = 5E14 ngate = 3.8E19 nsd = 2E20 |
| +ados = 1.332 bdos = 0.86892 |
| //*** Vth Related Parameter *** |
| +vth0 = -0.512 + sw_vth0_pthick k1 = 0.23116 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.04185 k3 = 0 |
| +k3b = 0 kb1 = 1 w0 = 2.5E-6 |
| +lpe0 = 4.161339E-7 lpeb = 0 dvt0 = 2.2 |
| +dvt1 = 0.53 dvt2 = -0.032 dvt0w = 0 |
| +dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1 |
| +dvtp0 = 0 dvtp1 = 0 dvtp2 = 0 |
| +dvtp3 = 0 dvtp4 = 0 vsce = 0 |
| +cdsbs = 0 |
| //*** Mobility Related Parameter *** |
| +u0 = 5.37625E-3 * sw_u0_pthick ua = 0 ub = 2.55345E-19 |
| +uc = -2.325E-11 ud = 0 eu = 1 |
| +ucs = 1 vsat = 4.648939E4 lvsat = 0.145994 |
| +a0 = 0.105474 la0 = 7.09237E-2 ags = 3.0958 |
| +lags = 0.999946 b0 = 0 b1 = 5.634546E-8 |
| +keta = -0.6 ketas = 0 a1 = 0 |
| +a2 = 1 rdsw = 420.5 * sw_rdsw_pthick rdw = 50 |
| +rdwmin = 0 rsw = 50 rswmin = 0 |
| +prwb = 0 prwg = -3E-5 wr = 1 |
| //*** Subthreshold Related Parameter *** |
| +voff = 0 nfactor = 0.5 eta0 = 0.159802 |
| +leta0 = 0.994516 etab = -0.07 eta0cv = 0.08 |
| +etabcv = -0.07 dsub = 0.825467 ldsub = 2.03115E-2 |
| +cit = 1.956591E-3 cdsc = 2.4E-4 cdscb = 0 |
| +cdscd = 0 |
| //*** dW and dL Parameter *** |
| +lint = 0 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 0 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 xw = 0 |
| +xl = 0 |
| //*** Output Resistance Related Parameter *** |
| +pclm = 1.667682 pdiblc1 = 3.84369E-2 pdiblc2 = 1.000168E-5 |
| +pdiblcb = 0 drout = 4.316444 ldrout = 0 |
| +pvag = 9.66412E-2 delta = 0.05 alpha0 = 0 |
| +fbjtii = 0 beta0 = 0 beta1 = 0 |
| +beta2 = 0.1 vdsatii0 = 0.9 tii = 0 |
| +lii = 0 esatii = 1E7 sii0 = 0.5 |
| +sii1 = 0.1 sii2 = 0 siid = 0 |
| +agidl = 0 bgidl = 2.3E9 cgidl = 0.5 |
| +egidl = 1.2 rgidl = 1 kgidl = 0 |
| +fgidl = 0 agisl = 0 bgisl = 2.3E9 |
| +cgisl = 0 egisl = 1.2 rgisl = 1 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 1E3 rbsh = 100 rhalo = 1E15 |
| //*** Gate-to-body tunneling parameters *** |
| +aigc = 0.31 bigc = 0.024 cigc = 0.03 |
| +aigsd = 0.31 bigsd = 0.024 cigsd = 0.03 |
| +nigc = 1 pigcd = 1 poxedge = 1 |
| +dlcig = 0 toxqm = 1E-8 ntox = 1 |
| +toxref = 2.5E-9 ebg = 1.2 alphagb1 = 0.35 |
| +betagb1 = 0.03 vgb1 = 300 vevb = 0.075 |
| +alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17 |
| +vecb = 0.026 voxh = 5 deltavox = 5E-3 |
| +aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3 |
| //*** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 2.659147E-10/swr_tox_hv cgdo = 2.659147E-10/swr_tox_hv |
| +cgeo = 3E-10/swr_tox_hv cjswg = 1E-10 mjswg = 0.5 |
| +cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick) cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick) ckappa = 0.24 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = -1.469717E-8 llc = 0 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0.39 |
| +acde = 0.5 voffcv = -0.5 |
| //*** Temperature coefficient *** |
| +tnom = 27 ute = -1.347492 ucste = -4.775E-3 |
| +ud1 = 0 kt1 = -0.165 kt1l = -6.158157E-8 |
| +kt2 = 0.022 ua1 = 3.000582E-9 ub1 = -3.824957E-18 |
| +uc1 = -5.6E-11 at = 5.95E4 tcjswg = 0 |
| +tpbswg = 0 tcjswgd = 0 tpbswgd = 0 |
| +cth0 = 1E-5 prt = 0 rth0 = 0 |
| +ntrecf = 0 ntrecr = 0 xbjt = 0.7 |
| +xdif = 1 xrec = 1 xtun = 0 |
| +xdifd = 1 xrecd = 1 xtund = 0 |
| +wth0 = 0 tvbci = 0 tbgasub = 7.02E-4 |
| +tbgbsub = 1.108E3 |
| //*** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| //*** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| +rbsb = 50 rbdb = 50 gbmin = 1E-12 |
| //*** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| //*** Stress Effect Related Parameter *** |
| +saref = 1E-6 sbref = 1E-6 wlod = 0 |
| +ku0 = 0 kvsat = 0 kvth0 = 0 |
| +tku0 = 0 llodku0 = 0 wlodku0 = 0 |
| +llodvth = 0 wlodvth = 0 stk2 = 0 |
| +lodk2 = 1 steta0 = 0 lodeta0 = 1 |
| +steta0cv = 0 lodeta0cv = 1 |
| //***Material Properties*** |
| +eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7 |
| +bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10 |
| +agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12 |
| +bgbc2p = 7.4567E11 vtm00 = 0.026 |
| |
| |
| |
| ends pthick_base |
| ****************************************************************** |
| ****************************************************************** |
| |
| model ps_nsoi1_lls bsimsoi type=n |
| + wmax = 5.1u lmax = 0.6u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.034 bdos = 0.6 |
| ***** Vth Related Parameter *** |
| +vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.085 k1 = 0.2 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.15 k3 = 0 |
| +k3b = 0 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53 |
| +dvt2 = -0.032 dvt0w = 0 dvt1w = 0 |
| +dvt2w = 0 nlx = 1.74E-7 |
| ***** Mobility Related Parameter *** |
| +u0 = 150*sw_u0_nmos_lowvt ua = 0 ub = 0 |
| +uc = 0 vsat = 4.4E4 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_nmos_lowvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 |
| +etab = 0 dsub = 0.05 cit = 0 |
| +cdsc = 9E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = 1E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0 lpclm = 0 wpclm = 0.25 |
| +pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = 0 delta = 7.5E-3 |
| +alpha0 = 1E-8 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E8 |
| +cgidl = 0 egidl = 0.72 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8 |
| +iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-11 vrec0 = 0.075 |
| +vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7 |
| +vabjt = 9.7 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 1.7 lminv = -0.017 wminv = 0.118 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.01596 bigc = 0 cigc = 0.0273 |
| +aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2 |
| +nigc = 4 pigcd = 0.5 dlcig = 1E-9 |
| +ntox = 1.024 toxref = 1.8E-9 ebg = 1.15 |
| +alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200 |
| +vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06 |
| +vgb2 = 200 vecb = 3 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6 |
| +cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6 |
| +cf = 0 clc = 5E-7 cle = 0.6 |
| +dlc = 3.35E-8 llc = 0 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +voffcv = -0.2 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -1.5 kt1 = -0.165 |
| +kt1l = 0 kt2 = 0.022 ua1 = 0 |
| +ub1 = 0 uc1 = -5.6E-11 at = 100 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| ***** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| ***** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +minvcv = 0 |
| +vsdfb = -5.0 |
| +vsdth = -3.0 |
| +csdmin = 1.0e-4 |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| |
| model ps_nsoi2_lls bsimsoi type=n |
| + wmax = 5.1u lmax = 0.6u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = 1E15 |
| +ngate = 1E20 ados = 3.034 bdos = 0.6 |
| ***** Vth Related Parameter *** |
| +vth0 = 0.46 + sw_vth0_nmos_highvt k1 = 0.2 k1w1 = 0 |
| +k1w2 = 0 k2 = -0.15 k3 = 0 |
| +k3b = 0 kb1 = 1.5 w0 = 2.5E-6 |
| +lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53 |
| +dvt2 = -0.032 dvt0w = 0 dvt1w = 0 |
| +dvt2w = 0 nlx = 1.74E-7 |
| ***** Mobility Related Parameter *** |
| +u0 = 100*sw_u0_nmos_highvt ua = 0 ub = 0 |
| +uc = 0 vsat = 4.4E4 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_nmos_highvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 * 0.85 |
| +etab = 0 dsub = 0.05 cit = 0 |
| +cdsc = 9E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = 1.6E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = -2.85E-8 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0 lpclm = 0 wpclm = 0.25 |
| +pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 7.8E-3 pvag = 0 delta = 7.5E-3 |
| +alpha0 = 1E-8 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E8 |
| +cgidl = 0 egidl = 0.72 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8 |
| +iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-11 vrec0 = 0.075 |
| +vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7 |
| +vabjt = 9.7 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| +minv = 1.7 lminv = -0.017 wminv = 0.118 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.01596 bigc = 0 cigc = 0.0273 |
| +aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2 |
| +nigc = 4 pigcd = 0.5 dlcig = 1E-9 |
| +ntox = 1.024 toxref = 1.8E-9 ebg = 1.15 |
| +alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200 |
| +vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06 |
| +vgb2 = 200 vecb = 3 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6 |
| +cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6 |
| +cf = 0 clc = 5E-7 cle = 0.6 |
| +dlc = 3.35E-8 llc = 0 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +voffcv = -0.2 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -1.5 kt1 = -0.165 |
| +kt1l = 0 kt2 = 0.022 ua1 = 0 |
| +ub1 = 0 uc1 = -5.6E-11 at = 100 |
| +tcjswg = 0 tpbswg = 0 cth0 = 1E-6 |
| +prt = 0 rth0 = 0.2 ntrecf = 0 |
| +ntrecr = 0 xbjt = -0.05 xdif = 1 |
| +xrec = 1 xtun = 0 wth0 = 0 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 1 k2b = 0 dk2b = 0 |
| +dvbd0 = 0 dvbd1 = 0 moinfd = 1E3 |
| +vbs0pd = 0 vbs0fd = 0.5 |
| ***** RF Model Parameters *** |
| +rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1 |
| +ngcon = 1 xgw = 0 xgl = 0 |
| ***** Noise Model *** |
| +ntnoi = 1 tnoia = 1.5 tnoib = 3.5 |
| +rnoia = 0.577 rnoib = 0.37 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +minvcv = 0 |
| +vsdfb = -5.0 |
| +vsdth = -3.0 |
| +csdmin = 1.0e-4 |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| model ps_psoi1_lls bsimsoi type=p |
| + wmax = 5.1u lmax = 0.6u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| ***** Vth Related Parameter *** |
| +vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.080 k1 = 0.01 k1w1 = 0 |
| +k1w2 = 0 k2 = 0 k3 = -4 |
| +k3b = 0 kb1 = 0 w0 = 0 |
| +lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09 |
| +dvt1 = 0.214 dvt2 = 0 dvt0w = 0 |
| +dvt1w = 1E5 dvt2w = 0 dvtp0 = 0 |
| +dvtp1 = 0 dvtp2 = 0 dvtp3 = 0 |
| +dvtp4 = 0 cdsbs = 1E-3 |
| ***** Mobility Related Parameter *** |
| +u0 = 44*sw_u0_pmos_lowvt*1.3 ua = 0 ub = 0 |
| +uc = 0 vsat = 1E6 * 2 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_pmos_lowvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.05256 nfactor = 2.21 eta0 = 0.08 |
| +etab = -1E-3 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = -2.7E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = 1E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0.675 * 3 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E9 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 9E-3 bigsd = 0 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +ntox = 4.5 toxref = 1.8E-9 ebg = 1.2 |
| +alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300 |
| +vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05 |
| +vgb2 = 17 vecb = 0.026 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_lowvt mjswg = 0.5 |
| +cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +acde = 1 moin = 500 voffcv = -0.5 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -0.73 kt1 = -0.042 |
| +kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0 |
| +ub1 = 0 uc1 = 0 at = 3.4E4 |
| +tcjswg = 0 cth0 = 1E-6 prt = 0 |
| +rth0 = 0.2 ntrecf = 0 ntrecr = 0 |
| +xbjt = 1.15 xdif = 1.11 xrec = 0.9 |
| +xtun = 0 wth0 = 4E-6 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| ***** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +vsdfb = -4.0 |
| +vsdth = -2.0 |
| +csdmin = 1.0e-4 |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| model ps_psoi2_lls bsimsoi |
| + wmax = 5.1u lmax = 0.6u |
| ***** Flag Parameter *** |
| +level = 70 version = 4.5 soimod = 1 |
| +shmod = 1 binunit = 1 mobmod = 1 |
| +capmod = 3 igcmod = 1 igbmod = 1 |
| +rgatemod = 1 vgstcvmod = 2 gidlmod = 0 |
| +fdmod = 0 type=p |
| ***** Process Parameter *** |
| +tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv |
| +xj = 4.5E-8 nch = 1E18 nsub = -1E15 |
| +ngate = 1E20 ados = 2.664 bdos = 0.18144 |
| ***** Vth Related Parameter *** |
| +vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1 k1 = 0.01 k1w1 = 0 |
| +k1w2 = 0 k2 = 0 k3 = -4 |
| +k3b = 0 kb1 = 0 w0 = 0 |
| +lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09 |
| +dvt1 = 0.214 dvt2 = 0 dvt0w = 0 |
| +dvt1w = 1E5 dvt2w = 0 dvtp0 = 0 |
| +dvtp1 = 0 dvtp2 = 0 dvtp3 = 0 |
| +dvtp4 = 0 cdsbs = 1E-3 |
| ***** Mobility Related Parameter *** |
| +u0 = 25*sw_u0_pmos_highvt ua = 0 ub = 0 |
| +uc = 0 vsat = 1E6 a0 = 0.372 |
| +ags = 0 b0 = 0 b1 = 0 |
| +keta = 0 ketas = 0 a1 = 0 |
| +a2 = 0.99 rdsw = 60*sw_rdsw_pmos_highvt prwb = 0 |
| +prwg = 0 wr = 0.85 |
| ***** Subthreshold Related Parameter *** |
| +voff = -0.05256 nfactor = 2.21 eta0 = 0.08 |
| +etab = -1E-3 dsub = 0.1 cit = 0 |
| +cdsc = 3E-3 cdscb = 0 cdscd = -2E-3 |
| ***** dW and dL Parameter *** |
| +lint = -1E-8 - sw_dvar_polycd ll = 0 lln = 1 |
| +lw = 0 lwn = 1 lwl = 0 |
| +wint = 3E-9 dwg = 0 dwb = 0 |
| +wl = 2E-15 wln = 1 ww = 0 |
| +wwn = 1 wwl = 0 |
| ***** Output Resistance Related Parameter *** |
| +pclm = 0.675 lpclm = 0 wpclm = 0.5 |
| +pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0 |
| +drout = 0.571 pvag = 0 delta = 0.045 |
| +alpha0 = 0 fbjtii = 0 beta0 = 0 |
| +beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14 |
| +tii = -0.226 lii = 0 esatii = 1E8 |
| +sii0 = 1 sii1 = 0.1 sii2 = 0 |
| +siid = 0 agidl = 0 bgidl = 1E9 |
| +cgidl = 0 egidl = 0 agisl = 0 |
| +bgisl = 1E9 egisl = 1.2 ntun = 10 |
| +ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6 |
| +nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10 |
| +isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8 |
| +iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4 |
| +istun = 1E-5 ln = 1E-9 vrec0 = 0.025 |
| +vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7 |
| +vabjt = 10 aely = 0 ahli = 1E-15 |
| +rbody = 10 rbsh = 100 rhalo = 1E15 |
| ***** Gate-to-body tunneling parameters *** |
| +aigc = 0.62 bigc = 0 cigc = 0.1 |
| +aigsd = 9E-3 bigsd = 0 cigsd = 0.0905 |
| +nigc = 1 pigcd = 1 dlcig = 5E-9 |
| +ntox = 4.5 toxref = 1.8E-9 ebg = 1.2 |
| +alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300 |
| +vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05 |
| +vgb2 = 17 vecb = 0.026 |
| ***** AC and Capacitance Parameter *** |
| +xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv |
| +cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_highvt mjswg = 0.5 |
| +cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1 |
| +cf = 0 clc = 1E-8 cle = 0 |
| +dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0 |
| +dwc = 0 delvt = 0 fbody = 0 |
| +acde = 1 moin = 500 voffcv = -0.5 |
| ***** Temperature coefficient *** |
| +tnom = 22 ute = -0.73 kt1 = -0.042 |
| +kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0 |
| +ub1 = 0 uc1 = 0 at = 3.4E4 |
| +tcjswg = 0 cth0 = 1E-6 prt = 0 |
| +rth0 = 0.2 ntrecf = 0 ntrecr = 0 |
| +xbjt = 1.15 xdif = 1.11 xrec = 0.9 |
| +xtun = 0 wth0 = 4E-6 |
| ***** BSIMSOI Built-In Potential Lowering Model Parameters *** |
| +vbsa = 0 nofffd = 1 vofffd = 0 |
| +k1b = 2 k2b = 0.5 dk2b = 0.3 |
| +dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6 |
| ***** RF Model Parameters *** |
| +rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1 |
| +ngcon = 2 xgw = 0 xgl = 0 |
| +gbmin = 1E-12 |
| ***** Unknown Parameters *** |
| +gatetype = non_h dskip = yes |
| +vsdfb = -4.0 |
| +vsdth = -2.0 |
| +csdmin = 1.0e-4 |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| model res_mim resistor |
| +l = 5u |
| +w = 2u |
| +rsh = 7.2 * sw_res_mim |
| +tc1=8.96e-4 |
| +tc2=1.49e-6 |
| ****************************************************************** |
| ****************************************************************** |
| |
| ** template model for evaluation purposes only |
| ** simulator lang=spectre |
| model res_nplus_poly resistor |
| |
| +l = 5u |
| +w = 2u |
| +rsh = 3000 * sw_res_nplus_poly |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| ** template model for evaluation purposes only |
| ** simulator lang=spectre |
| model res_nsil_poly resistor |
| |
| +l = 5u |
| +w = 2u |
| +rsh = 15 * sw_res_nsil_poly |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| inline subckt res_pplus_poly (r1 r2) |
| |
| parameters w=1u l=1u |
| |
| res_pplus_poly (r3 r4) main_res w=(w-0.0285u+sw_dvar_polycd*2) l=l+0.2055u |
| rhead1 (r1 r3) head_res w=w l=1u |
| rhead2 (r2 r4) head_res w=w l=1u |
| |
| model main_res resistor |
| +rsh = 185 * sw_res_pplus_poly // extracted value = 184.73 |
| +tc1 = 6.849E-04 |
| +tc2 = 5.464E-07 |
| +tnom = 25 |
| |
| model head_res resistor |
| +rsh = 0.5 * 17.5956 * sw_res_head_poly |
| +tc1 = -4.164E-03 |
| +tc2 = -3.802E-06 |
| +tnom = 25 |
| |
| |
| ends res_pplus_poly |
| ****************************************************************** |
| ****************************************************************** |
| |
| |
| ** template model for evaluation purposes only |
| simulator lang=spectre |
| subckt res_pplus (POS NEG) |
| parameters |
| |
| + l = 5u |
| + w = 2u |
| + rsh = 3100 |
| |
| ** Netlist: |
| Rdevice (POS NEG) resistor r=(rsh*l*sw_res_pplus)/w |
| ends res_pplus |
| |
| ****************************************************************** |
| ****************************************************************** |
| |
| // Pplus Silicide Poly resistor |
| |
| inline subckt res_psil_poly (r1 r2) |
| |
| parameters w=1u l=1u |
| |
| res_psil_poly (r3 r4) main_res w=(w+0.0188u+sw_dvar_polycd*2) l=l+0.27u |
| rhead1 (r1 r3) head_res w=w l=1u |
| rhead2 (r2 r4) head_res w=w l=1u |
| |
| model main_res resistor |
| +rsh = 15 * sw_res_psil_poly // extracted value = 16.36 |
| +tc1 = 2.545E-03 |
| +tnom = 25 |
| |
| model head_res resistor |
| +rsh = 0.5 * 7.73 * sw_res_head_poly |
| +tc1 = 9.381E-04 |
| +tc2 = -3.305E-07 |
| +tnom = 25 |
| |
| |
| ends res_psil_poly |
| |
