***********************************************************
*		SKY90-FD FDSOI Spice Models
*               Generating model files for flow      : copper7lm
*               Model Type: general models
*		Version: 1.09.03C
*		Date: 08/22/2022
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*
*
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*       Global parameters, functions, and Monte Carlo
*       Corner parameters descriptions: Corner_Parameters.html
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* Global functions
* ---------------------------------

parameters swr_tox_lv = sw_tox_lv / 1.8e-9
parameters swr_tox_hv = sw_tox_hv / 6.2e-9

* -------- Calculated Source/Drain instance parameters -----
real swf_fet_as (real nf, real w) {
   return ( (nf-1)*0.25u + 2*0.225u) * w  * 0.5
}
real swf_fet_ps (real nf, real w) {
   return (nf-1)*0.25u + 2*0.225u + w*(nf+1)
}
* --- SBC Only
real swf_fet_sbc_as (real nf, real w) {
   return ( (nf-1)*0.25u + 2*0.225u) * (w+0.15u) * 0.5
}
real swf_fet_sbc_ps (real nf, real w) {
   return (nf-1)*0.25u + 2*0.225u + (w+0.15u)*(nf+1)
}

* -------- T-gate and H-gate instance parameters -----
real swf_psbcp (real nf, real nbc) {
   return ( (nf-1)*0.25u + 2*0.225u ) * 0.5 * nbc 
}
real swf_agbcp (real nf, real l, real nbc) {
   return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.075u * nbc
}
real swf_aebcp (real nf, real l, real nbc) {
   return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.375u * nbc
}
* --- SBC Only
real swf_psbcp_sbc (real nf) {
   return ( floor(nf/2)+1 ) * 0.225u
}
real swf_agbcp_sbc (real nf) {
   return 2*nf*0.075u*0.15u
}
real swf_aebcp_sbc (real nf) {
   return (floor(nf/2) + 1)*2*0.375u*0.15u
}

********************************************************
******************************************************************
******************************************************************

subckt cap_metals pos neg

parameters l nf toplev botlev

//numlayers=(m1_used+m2_used+m3_used+m4_used+m5_used)
parameters m1_used=(botlev<=1 && toplev>=1)
parameters m2_used=(botlev<=2 && toplev>=2)
parameters m3_used=(botlev<=3 && toplev>=3)
parameters m4_used=(botlev<=4 && toplev>=4)
parameters m5_used=(botlev<=5 && toplev>=5)

//"IsM2Bot" is 1 if M2 is the bottom layer of the stack
//"IsM2Shielded" is 1 if M2 is in the stack, but is not the bottom metal
parameters ism1bot=(botlev==1)
parameters ism2bot=(botlev==2)
parameters ism3bot=(botlev==3)
parameters ism4bot=(botlev==4)
parameters ism5bot=(botlev==5)

parameters ism2shielded=(botlev<2 && toplev>=2)
parameters ism3shielded=(botlev<3 && toplev>=3)
parameters ism4shielded=(botlev<4 && toplev>=4)
parameters ism5shielded=(botlev<5 && toplev>=5)

parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(pow(2.71828,(l/1e-6))-1+exp(3.29))-2.95)*0.0771
//parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(exp(l/1e-6)-1+exp(3.29))-2.95)*0.0771
parameters c_pos=1e-15*nf*(l/1e-6 + 2.5)*(ism1bot*0.015 + ism2bot*0.0095 + ism3bot*0.0075 + ism4bot*0.0065 + ism5bot*0.0059 + ism2shielded*0.0027 + ism3shielded*0.0043 + ism4shielded*0.0040 + ism5shielded*0.0036)
parameters c_neg=c_pos

cdevice (pos neg) capacitor c=c_allfingers*sw_cap_metals
cc_pos (pos 0) capacitor c=c_pos
cc_neg (neg 0) capacitor c=c_neg

ends cap_metals

 
******************************************************************
******************************************************************

subckt cap_mim pos neg

parameters w l 

cap_mim (pos neg) capacitor c=sw_cap_mim_ca * (w+sw_cap_mim_dw) * (l+sw_cap_mim_dw)

ends cap_mim

 
******************************************************************
******************************************************************
// -----------------------------------------------------------
//      Forward bias diode model
// -----------------------------------------------------------

subckt diode_nplus_vtp ( a c ) 
   parameters w = 0.8u 
+             swx_is = exp(35.5*(1-sw_res_nplus_poly)*0.2) // 35.5 is q/(nkT)

d0 ( a c)   diode_main           area=w
d1 ( a c)   diode_recombine      area=w
d2 ( c a)   diode_reverse_leak   area=w

model diode_main   diode
//*** Flag Parameter ***
+level = 1                     
//*** Junction Diode Parameter ***
+is = 1.130276E-13 * swx_is
+n = 1.093706                  
//*** Breakdown Parameter ***
+vb = 5.725628                 ibv = 1E-3                    nz = 9.077509                 
//*** Parasitic Resistance Parameter ***
+rs = 2.806622E-5              
//*** Temperature Effects Parameter ***
+tlev = 0                      tlevc = 0                     eg = 1.11705                  
+xti = 3.637179                tbv1 = 0                      tnom = 25                     
+trs = 1.206836E-3             cta = 0                       ctp = 0                       
+pta = 0                       ptp = 0                       
//*** Junction Diode Model Control Parameter ***
+imax = 1E12               
//*** Capacitance Parameter ***
+cjo = 1E-10*3.14 / sw_rdsw_pmos_lowvt     vj = 0.6          mj = 0.5 
+cjsw = 0                      vjsw = 0.8                    mjsw = 0.33                   
+fc = 0.5                      

// ***********************

model diode_recombine   diode
//*** Flag Parameter ***
+level = 1                     
//*** Junction Diode Parameter ***
+is = 6.694065E-9              n = 2.147432 
//*** Breakdown Parameter ***
+bv = 6                        ibv = 0.01                    nz = 21.448254                
//*** Parasitic Resistance Parameter ***
+rs = 4.730854                 
//*** Temperature Effects Parameter ***
+tlev = 2                      eg = 0.449216                 gap1 = 8.693526E-3            
+gap2 = 657.504199             xti = 0.1711                  tbv1 = 4.661495E-3            
+tnom = 25   
//                   trs = -7.32374E-2             
//*** Junction Diode Model Control Parameter ***
+imax = 1e12  

// ***********************

model diode_reverse_leak   diode
//*** Junction Diode Parameter ***
+is = 1.136472E-8              n = 2.543035                  
//*** Parasitic Resistance Parameter ***
+rs = 267.790479 * sw_rdsw_pmos_lowvt 
//*** Temperature Effects Parameter ***
+eg = 0.851245                 xti = 1.870884                tnom = 25 
//+trs = -7.622322E-3            
//+minr = 1
//*** Junction Diode Model Control Parameter ***
+imax = 1e12                

ends  diode_nplus_vtp

******************************************************************
******************************************************************
// -----------------------------------------------------------
//      Forward bias diode model
// -----------------------------------------------------------

subckt diode_pplus_vtn ( a c ) 
   parameters w = 0.8u 
+             swx_is = exp(35.5*(1-sw_res_pplus_poly)*0.2) // 35.5 is q/(nkT)

d0 ( a c)   diode_main           area=w
d1 ( a c)   diode_recombine      area=w
d2 ( c a)   diode_reverse_leak   area=w

model diode_main   diode
//*** Flag Parameter ***
+level = 1                     
//*** Junction Diode Parameter ***
+is = 9.25927E-14 * swx_is              n = 1.070162                  
//*** Breakdown Parameter ***
+vb = 5.725628                 ibv = 1E-3                    nz = 9.077509                 
//*** Parasitic Resistance Parameter ***
+rs = 3.329246E-5              
//*** Temperature Effects Parameter ***
+tlev = 0                      tlevc = 0                     eg = 1.106282                 
+xti = 3.943658                tbv1 = 0                      tnom = 25                     
+trs = 1.508794E-3             cta = 0                       ctp = 0                       
+pta = 0                       ptp = 0                       
//*** Junction Diode Model Control Parameter ***
+imax = 1E12                   
//*** Capacitance Parameter ***
+cjo = 1E-10*3.14 / sw_rdsw_nmos_lowvt     vj = 0.6          mj = 0.5 
+cjsw = 0                      vjsw = 0.8                    mjsw = 0.33                   
+fc = 0.5                      

// ***********************

model diode_recombine   diode
//*** Flag Parameter ***
+level = 1                     minr = 1E-3                   
//*** Junction Diode Parameter ***
+is = 3.43374E-8               n = 2.647693 
//*** Breakdown Parameter ***
+bv = 7.5                      ibv = 0.01                    nz = 1                        
//*** Parasitic Resistance Parameter ***
+rs = 34.156126 
//*** Temperature Effects Parameter ***
+tlev = 2                      eg = 0.262786                 gap1 = 1.08734E-2             
+gap2 = 867.969167             xti = 0.31759                 tbv1 = 0                      
+tnom = 25                     
// trs = -0.124572               
//*** Junction Diode Model Control Parameter ***
+imax = 1e12                   

// ***********************

model diode_reverse_leak   diode
//*** Junction Diode Parameter ***
+is = 1.202149E-14        n = 0.500069                  ikf = 5.16894E-2              
//*** Parasitic Resistance Parameter ***
+rs = 5.892906E3 * sw_rdsw_nmos_lowvt
//*** Temperature Effects Parameter ***
+eg = 0.679891                 xti = 0.645549                tnom = 25                     
// +trs = -1.199791E-3            
//*** Junction Diode Model Control Parameter ***
+imax = 1e12                

ends  diode_pplus_vtn

******************************************************************
******************************************************************


inline subckt base_nmos_1p2v_highvt_bodytie (d g s e p)

parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
+ swx_align_poly

base_nmos_1p2v_highvt_bodytie (d g s e p) nmos_1p2v_highvt_bodytie_model
+ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
+ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp


model nmos_1p2v_highvt_bodytie_model  bsimsoi type=n
+ wmax = 5.1u     lmax = 0.6u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = 1E15                   
+ngate = 1E20                  ados = 3.034                  bdos = 0.6                    
***** Vth Related  Parameter ***
+vth0 = 0.46 + sw_vth0_nmos_highvt         k1 = 0.2                      k1w1 = 0
+k1w2 = 0                      k2 = -0.15                    k3 = 0
+k3b = 0                       kb1 = 1.5                     w0 = 2.5E-6
+lpe0 = 1.7E-7                 dvt0 = 2.2                    dvt1 = 0.53
+dvt2 = -0.032                 dvt0w = -swx_align_poly*1.14e7*0.7                     dvt1w = 0
+dvt2w = 0                     nlx = 1.74E-7
***** Mobility Related Parameter ***
+u0 = 100*sw_u0_nmos_highvt                      ua = 0                        ub = 0
+uc = 0                        vsat = 4.4E4                  a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0
+keta = 0                      ketas = 0                     a1 = 0
+a2 = 0.99                     rdsw = 60*sw_rdsw_nmos_highvt                     prwb = 0
+prwg = 0                      wr = 0.85
***** Subthreshold Related Parameter ***
+voff = -0.02628               nfactor = 0.6                 eta0 = 0.0736 * 0.85
+etab = 0                      dsub = 0.05                   cit = 0
+cdsc = 9E-3                   cdscb = 0                     cdscd = -2E-3
***** dW and dL Parameter ***
+lint = 1.6E-8 - sw_dvar_polycd        ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -2.85E-8               dwg = 0                       dwb = 0
+wl = 2E-15                    wln = 1                       ww = 0
+wwn = 1                       wwl = 0
***** Output Resistance Related Parameter ***
+pclm = 0                      lpclm = 0                     wpclm = 0.25
+pdiblc1 = 0                   pdiblc2 = 0                   pdiblcb = 0
+drout = 7.8E-3                pvag = 0                      delta = 7.5E-3
+alpha0 = 1E-8                 fbjtii = 0                    beta0 = 0
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14
+tii = -0.226                  lii = 0                       esatii = 1E8
+sii0 = 1                      sii1 = 0                      sii2 = 0
+siid = 0                      agidl = 0                     bgidl = 1E8
+cgidl = 0                     egidl = 0.72                  ntun = 10
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-5                  idbjt = 1E-5                  isdif = 5.13E-8
+iddif = 4.5E-8                isrec = 1E-4                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-11                    vrec0 = 0.075
+vtun0 = 0                     nbjt = 1.215                  lbjt0 = 2E-7
+vabjt = 9.7                   aely = 0                      ahli = 1E-15
+rbody = 10                    rbsh = 100                    rhalo = 1E15
+minv = 1.7                    lminv = -0.017                wminv = 0.118
***** Gate-to-body tunneling parameters ***
+aigc = 0.01596                bigc = 0                      cigc = 0.0273                 
+aigsd = 0.018128              bigsd = 4.05E-3               cigsd = 9.00909E-2            
+nigc = 4                      pigcd = 0.5                   dlcig = 1E-9                  
+ntox = 1.024                  toxref = 1.8E-9               ebg = 1.15                    
+alphagb1 = 0.35               betagb1 = 1E-4                vgb1 = 200                    
+vevb = 0.3                    alphagb2 = 0.6136             betagb2 = 0.06                
+vgb2 = 200                    vecb = 3                      
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 1E-10                  cjswg = 1E-10/sw_rdsw_nmos_highvt   mjswg = 0.6                   
+cgsl = 4.5E-11                cgdl = 4.5E-11                ckappa = 0.6                  
+cf = 0                        clc = 5E-7                    cle = 0.6                     
+dlc = 3.35E-8                 llc = 0                       dlbg = 0                      
+dwc = 0                       delvt = 0                     fbody = 0                     
+voffcv = -0.2                 
***** Temperature coefficient ***
+tnom = 22                     ute = -1.5                    kt1 = -0.165
+kt1l = 0                      kt2 = 0.022                   ua1 = 0
+ub1 = 0                       uc1 = -5.6E-11                at = 100
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6
+prt = 0                       rth0 = 0.2                    ntrecf = 0
+ntrecr = 0                    xbjt = -0.05                  xdif = 1
+xrec = 1                      xtun = 0                      wth0 = 0
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
***** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
***** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37                  
***** Unknown Parameters ***
+gatetype = non_h              dskip = yes
+minvcv = 0
+vsdfb = -5.0
+vsdth = -3.0
+csdmin = 1.0e-4

ends base_nmos_1p2v_highvt_bodytie
******************************************************************
******************************************************************

inline subckt base_nmos_1p2v_lowvt_bodytie (d g s e p)

parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
+ swx_align_poly nbc

base_nmos_1p2v_lowvt_bodytie (d g s e p) base_nmos_1p2v_lowvt_bodytie_model
+ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps 
+ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp


model base_nmos_1p2v_lowvt_bodytie_model  bsimsoi type=n
+ wmax = 5.1u  	lmax = 0.4u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1
+shmod = 1                     binunit = 1                   mobmod = 1
+capmod = 3                    igcmod = 1                    igbmod = 1
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0
+fdmod = 0                     
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = 1E15                   
+ngate = 1E20                  ados = 3.034                  bdos = 0.6                    
***** Vth Related  Parameter ***
+vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.008     k1 = 0.2                      k1w1 = 0
+k1w2 = 0                      k2 = 0.2245                   k3 = 0
+k3b = 0                       kb1 = 1.5                     w0 = 2.5E-6
+lpe0 = 1.7E-7                 dvt0 = 3.3                    dvt1 = 0.53
+dvt2 = -0.032                 dvt0w = -swx_align_poly*1.14e7 dvt1w = 0
+dvt2w = 0                     nlx = 1.74E-7
***** Mobility Related Parameter ***
+u0 = 132  * sw_u0_nmos_lowvt * 1.2                    ua = 0                        ub = 0
+uc = 0                        vsat = 4.4E4                  a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0
+keta = 0                      ketas = 0                     a1 = 0
+a2 = 0.99                     rdsw = 60                     prwb = 0
+prwg = 0                      wr = 0.9
***** Subthreshold Related Parameter ***
+voff = -0.0495                nfactor = 0.714               eta0 = 0.01
+etab = 0                      dsub = 0.05                   cit = 0
+cdsc = 9E-3                   cdscb = 0                     cdscd = -2E-3
***** dW and dL Parameter ***
+lint = 1E-8 - sw_dvar_polycd        ll = 0                        lln = 1                       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = -1.6245E-8               dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
***** Output Resistance Related Parameter ***
+pclm = 6.6                    lpclm = 0                     wpclm = 0.01
+pdiblc1 = 0                   pdiblc2 = 0                   pdiblcb = 0
+drout = 7.8E-3                pvag = 0                      delta = 0.117575
+alpha0 = 1E-8                 fbjtii = 0                    beta0 = 0
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14
+tii = -0.226                  lii = 0                       esatii = 1E8
+sii0 = 1                      sii1 = 0                      sii2 = 0
+siid = 0                      agidl = 0                     bgidl = 1E8
+cgidl = 0                     egidl = 0.72                  ntun = 10
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-5                  idbjt = 1E-5                  isdif = 5.13E-8
+iddif = 4.5E-8                isrec = 1E-4                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-11                    vrec0 = 0.075
+vtun0 = 0                     nbjt = 1.215                  lbjt0 = 2E-7
+vabjt = 9.7                   aely = 0                      ahli = 1E-15
+rbody = 10                    rbsh = 100                    rhalo = 1E15
+minv = 1.649                  lminv = -0.01598              wminv = 0.177
***** Gate-to-body tunneling parameters ***
+aigc = 0.01596                bigc = 0                      cigc = 0.0273                 
+aigsd = 0.018128              bigsd = 4.05E-3               cigsd = 9.00909E-2            
+nigc = 4                      pigcd = 0.5                   dlcig = 1E-9                  
+ntox = 1.024                  toxref = 1.8E-9               ebg = 1.15                    
+alphagb1 = 0.35               betagb1 = 1E-4                vgb1 = 200                    
+vevb = 0.3                    alphagb2 = 0.6136             betagb2 = 0.06                
+vgb2 = 200                    vecb = 3                      
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 1E-10                  cjswg = 1E-10/sw_rdsw_nmos_lowvt  mjswg = 0.6                   
+cgsl = 4.5E-11                cgdl = 4.5E-11                ckappa = 0.6                  
+cf = 0                        clc = 5E-7                    cle = 0.6                     
+dlc = 3.35E-8                 llc = 0                       dlbg = 0                      
+dwc = 0                       delvt = 0                     fbody = 0                     
+voffcv = -0.2                 
***** Temperature coefficient ***
+tnom = 22                     ute = -1.5                    kt1 = -0.165                  
+kt1l = 0                      kt2 = 0.022                   ua1 = 0                       
+ub1 = 0                       uc1 = -5.6E-11                at = 100                      
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6                   
+prt = 0                       rth0 = 0.2                    ntrecf = 0                    
+ntrecr = 0                    xbjt = -0.05                  xdif = 1                      
+xrec = 1                      xtun = 0                      wth0 = 0                      
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
***** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
***** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37                  
***** Unknown Parameters ***
+gatetype = non_h              dskip = yes
+minvcv = 0
+vsdfb = -5.0
+vsdth = -3.0
+csdmin = 1.0e-4

ends base_nmos_1p2v_lowvt_bodytie

******************************************************************
******************************************************************

inline subckt base_pmos_1p2v_highvt_bodytie (d g s e p)

parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
+ swx_align_poly

base_pmos_1p2v_highvt_bodytie (d g s e p) pmos_1p2v_highvt_bodytie_model
+ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
+ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp


model pmos_1p2v_highvt_bodytie_model  bsimsoi
+ wmax = 5.1u     lmax = 0.6u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1
+shmod = 1                     binunit = 1                   mobmod = 1
+capmod = 3                    igcmod = 1                    igbmod = 1
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0
+fdmod = 0                     type=p
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144
***** Vth Related  Parameter ***
+vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1        k1 = 0.01                     k1w1 = 0
+k1w2 = 0                      k2 = 0                        k3 = -4
+k3b = 0                       kb1 = 0                       w0 = 0
+lpe0 = -1E-8                  lpeb = 0                      dvt0 = 1.09
+dvt1 = 0.214                  dvt2 = 0                      dvt0w = -swx_align_poly*1.14e7
+dvt1w = 1E5                   dvt2w = 0                     dvtp0 = 0
+dvtp1 = 0                     dvtp2 = 0                     dvtp3 = 0
+dvtp4 = 0                     cdsbs = 1E-3
***** Mobility Related Parameter ***
+u0 = 25*sw_u0_pmos_highvt                       ua = 0                        ub = 0
+uc = 0                        vsat = 1E6                    a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0
+keta = 0                      ketas = 0                     a1 = 0
+a2 = 0.99                     rdsw = 60*sw_rdsw_pmos_highvt                     prwb = 0
+prwg = 0                      wr = 0.85
***** Subthreshold Related Parameter ***
+voff = -0.05256               nfactor = 2.21                eta0 = 0.08 
+etab = -1E-3                  dsub = 0.1                    cit = 0
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3
***** dW and dL Parameter ***
+lint = -1E-8 - sw_dvar_polycd          ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = 3E-9                   dwg = 0                       dwb = 0
+wl = 2E-15                    wln = 1                       ww = 0
+wwn = 1                       wwl = 0
***** Output Resistance Related Parameter ***
+pclm = 0.675                  lpclm = 0                     wpclm = 0.5
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0
+drout = 0.571                 pvag = 0                      delta = 0.045
+alpha0 = 0                    fbjtii = 0                    beta0 = 0
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14
+tii = -0.226                  lii = 0                       esatii = 1E8
+sii0 = 1                      sii1 = 0.1                    sii2 = 0
+siid = 0                      agidl = 0                     bgidl = 1E9
+cgidl = 0                     egidl = 0                     agisl = 0
+bgisl = 1E9                   egisl = 1.2                   ntun = 10
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 1E-15
+rbody = 10                    rbsh = 100                    rhalo = 1E15
***** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1
+aigsd = 9E-3                  bigsd = 0                     cigsd = 0.0905
+nigc = 1                      pigcd = 1                     dlcig = 5E-9
+ntox = 4.5                    toxref = 1.8E-9               ebg = 1.2
+alphagb1 = 0.74               betagb1 = 0.03                vgb1 = 300
+vevb = 0.075                  alphagb2 = 0.43               betagb2 = 0.05
+vgb2 = 17                     vecb = 0.026
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 0                      cjswg = 1E-10/sw_rdsw_pmos_highvt   mjswg = 0.5
+cgsl = 8.82E-11               cgdl = 6E-11                  ckappa = 0.1
+cf = 0                        clc = 1E-8                    cle = 0
+dlc = 3.074E-8                llc = 1.3E-16                 dlbg = 0
+dwc = 0                       delvt = 0                     fbody = 0
+acde = 1                      moin = 500                    voffcv = -0.5
***** Temperature coefficient ***
+tnom = 22                     ute = -0.73                   kt1 = -0.042
+kt1l = -1.1E-8                kt2 = -0.3                    ua1 = 0
+ub1 = 0                       uc1 = 0                       at = 3.4E4
+tcjswg = 0                    cth0 = 1E-6                   prt = 0
+rth0 = 0.2                    ntrecf = 0                    ntrecr = 0
+xbjt = 1.15                   xdif = 1.11                   xrec = 0.9
+xtun = 0                      wth0 = 4E-6
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0
+k1b = 2                       k2b = 0.5                     dk2b = 0.3
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6
***** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1
+ngcon = 2                     xgw = 0                       xgl = 0
+gbmin = 1E-12
***** Unknown Parameters ***
+gatetype = non_h            dskip = yes
+vsdfb = -4.0
+vsdth = -2.0
+csdmin = 1.0e-4


ends base_pmos_1p2v_highvt_bodytie
******************************************************************
******************************************************************

inline subckt base_pmos_1p2v_lowvt_bodytie (d g s e p)

parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
+ swx_align_poly nbc

base_pmos_1p2v_lowvt_bodytie (d g s e p) base_pmos_1p2v_lowvt_bodytie_model 
+ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
+ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp 


model base_pmos_1p2v_lowvt_bodytie_model  bsimsoi type=p
+ wmax = 5.1u     lmax = 0.4u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15                  
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144                
***** Vth Related  Parameter ***
+vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.028  k1 = 0.01                     k1w1 = 0
+k1w2 = 0                      k2 = -0.12                    k3 = -4
+k3b = 0                       kb1 = 0                       w0 = 0
+lpe0 = -1E-8                  lpeb = 0                      dvt0 = 1.09
+dvt1 = 0.214                  dvt2 = 0                      dvt0w = -swx_align_poly*7.0e6 
+dvt1w = 1E5                   dvt2w = 0                     dvtp0 = 0
+dvtp1 = 0                     dvtp2 = 0                     dvtp3 = 0
+dvtp4 = 0                     cdsbs = 1E-3
***** Mobility Related Parameter ***
+u0 = 44*(sw_u0_pmos_lowvt**0.8) * 1.3          ua = 0                        ub = 0
+uc = 0                        vsat = 1E6*5 * 2                  a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0
+keta = 0                      ketas = 0                     a1 = 0
+a2 = 0.99                     rdsw = 60*sw_rdsw_pmos_lowvt                   prwb = 0
+prwg = 0                      wr = 0.85
***** Subthreshold Related Parameter ***
+voff = -0.05256               nfactor = 2.21                eta0 = 0.0276
+etab = -1E-3                  dsub = 0.1                    cit = 0
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3
//*** dW and dL Parameter ***
+lint = -2.943E-8 - sw_dvar_polycd             ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -5.08E-9               dwg = 0                       dwb = 0
+wl = 2E-15                    wln = 1                       ww = 0
+wwn = 1                       wwl = 0
***** Output Resistance Related Parameter ***
+pclm = 0.675 * 2                 lpclm = 0                     wpclm = 0.5
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0
+drout = 0.571                 pvag = 0                      delta = 0.045
+alpha0 = 0                    fbjtii = 0                    beta0 = 0
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14
+tii = -0.226                  lii = 0                       esatii = 1E8
+sii0 = 1                      sii1 = 0.1                    sii2 = 0
+siid = 0                      agidl = 0                     bgidl = 1E9
+cgidl = 0                     egidl = 0                     agisl = 0
+bgisl = 1E9                   egisl = 1.2                   ntun = 10
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 1E-15
+rbody = 10                    rbsh = 100                    rhalo = 1E15
***** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1                    
+aigsd = 9E-3                  bigsd = 0                     cigsd = 0.0905                
+nigc = 1                      pigcd = 1                     dlcig = 5E-9                  
+ntox = 4.5                    toxref = 1.8E-9               ebg = 1.2                     
+alphagb1 = 0.74               betagb1 = 0.03                vgb1 = 300                    
+vevb = 0.075                  alphagb2 = 0.43               betagb2 = 0.05                
+vgb2 = 17                     vecb = 0.026                  
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 0                      cjswg = 1E-10/sw_rdsw_pmos_lowvt   mjswg = 0.5                   
+cgsl = 8.82E-11               cgdl = 6E-11                  ckappa = 0.1                  
+cf = 0                        clc = 1E-8                    cle = 0                       
+dlc = 3.074E-8                llc = 1.3E-16                 dlbg = 0                      
+dwc = 0                       delvt = 0                     fbody = 0                     
+acde = 1                      moin = 500                    voffcv = -0.5                 
***** Temperature coefficient ***
+tnom = 22                     ute = -0.73                   kt1 = -0.042                  
+kt1l = -1.1E-8                kt2 = -0.3                    ua1 = 0                       
+ub1 = 0                       uc1 = 0                       at = 3.4E4                    
+tcjswg = 0                    cth0 = 1E-6                   prt = 0                       
+rth0 = 0.2                    ntrecf = 0                    ntrecr = 0                    
+xbjt = 1.15                   xdif = 1.11                   xrec = 0.9                    
+xtun = 0                      wth0 = 4E-6                   
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 2                       k2b = 0.5                     dk2b = 0.3                    
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6                  
***** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1                    
+ngcon = 2                     xgw = 0                       xgl = 0                       
+gbmin = 1E-12                 
***** Unknown Parameters ***
+gatetype = non_h            dskip = yes
+vsdfb = -4.0
+vsdth = -2.0
+csdmin = 1.0e-4

ends base_pmos_1p2v_lowvt_bodytie
******************************************************************
******************************************************************


inline subckt nmos_1p2v_highvt_hg (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 2
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)


nmos_1p2v_highvt_hg (d g s b x)  base_nmos_1p2v_highvt_hg
+ l=l  nf=nf  ad=ad as=as pd=pd ps=ps nbc=nbc
+ w=(w-2*sw_dvar_polycd) * nf 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp
+ delvto = sw_vth0_nmos_highvt + 0.1


model base_nmos_1p2v_highvt_hg  bsimsoi
//*** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     minr = 1E-60                  type = n                      
//*** Geometry Range Parameter ***
+lmax = 6E-7                   wmax = 5.1E-6                 
//*** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = 1E15                   
+ngate = 1E20                  ados = 3.5838                 bdos = 1.2                    
//*** Vth Related  Parameter ***
+vth0 = 0.468                  k1 = 0.145671                 k1w1 = 0                      
+k1w2 = 0                      k2 = -0.203174                k3 = 0                        
+k3b = 0                       kb1 = 1.5                     w0 = 2.5E-6                   
+lpe0 = 9.8E-8                 dvt0 = 0.8815                 dvt1 = 0.49265                
+dvt2 = -0.032                 dvt0w = 0.032                 dvt1w = 0                     
+dvt2w = 0                     dvtp0 = 1.3E-7                dvtp1 = 0                     
+dvtp2 = 0                     dvtp3 = 0                     dvtp4 = 0                     
+nlx = 1.74E-7                 
//*** Mobility Related Parameter ***
+u0 = 129 * sw_u0_nmos_highvt                 ua = 0                        ub = 0
+uc = 0                        vsat = 3.7E4                  lvsat = -396                  
+wvsat = 2.304E3               a0 = 0.22824                  ags = 0                       
+b0 = 0                        b1 = 0                        keta = 0                      
+ketas = 0                     a1 = 0                        a2 = 0.99                     
+rdsw = 60 * sw_rdsw_nmos_lowvt           prwb = 0                      prwg = 0
+wr = 0.85                     
//*** Subthreshold Related Parameter ***
+voff = -3.47449E-2            lvoff = -3.1536E-3            wvoff = 3.942E-3              
+nfactor = 1.2                 eta0 = 1.97064E-2             etab = 0                      
+dsub = 0.0305                 cit = 0                       cdsc = 6.57E-3                
+cdscb = 0                     cdscd = -2E-3                 
//*** dW and dL Parameter ***
+lint = 1E-9 - sw_dvar_polycd                  ll = 0                        lln = 1 
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = -2.85E-8               dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
//*** Output Resistance Related Parameter ***
+pclm = 1.7                    lpclm = 0                     wpclm = 0.25                  
+pdiblc1 = 0.01                pdiblc2 = 0                   pdiblcb = 0                   
+drout = 7.8E-3                pvag = 0                      delta = 7.5E-3                
+alpha0 = 1E-8                 fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0                      sii2 = 0                      
+siid = 0                      agidl = 3.5E-13               lagidl = -1E-14               
+wagidl = 3E-14                bgidl = 1E8                   cgidl = 0                     
+egidl = 0.36                  ntun = 10                     ndiode = 1.5                  
+ndioded = 1.5                 nrecf0 = 1.6                  nrecf0d = 1.6                 
+nrecr0 = 10                   nrecr0d = 10                  isbjt = 1E-5                  
+idbjt = 1E-5                  isdif = 5.13E-8               iddif = 4.5E-8                
+isrec = 1E-4                  idrec = 1E-4                  istun = 1E-5                  
+ln = 1E-11                    vrec0 = 0.075                 vtun0 = 0                     
+nbjt = 1.215                  lbjt0 = 2E-7                  vabjt = 9.7                   
+aely = 0                      ahli = 1E-15                  rbody = 10                    
+rbsh = 100                    rhalo = 1E15                  minv = 1.088                  
+lminv = -0.017                wminv = 0.118                 
//*** Gate-to-body tunneling parameters ***
+aigc = 1.45236E-2             bigc = 0                      cigc = 1E-3                   
+aigsd = 1.12149E-2            laigsd = 0                    bigsd = 3.99425E-3            
+cigsd = 0.12088               nigc = 4                      pigcd = 0.5                   
+dlcig = 1E-9                  toxqm = 3.1E-9*swr_tox_lv                ntox = 1.024                  
+toxref = 1.8E-9               ebg = 1.15                    alphagb1 = 0.35               
+betagb1 = 1E-4                vgb1 = 200                    vevb = 0.3                    
+alphagb2 = 0.6136             betagb2 = 0.06                vgb2 = 200                    
+vecb = 3                      
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.36E-10/swr_tox_lv    cgdo = 3.36E-10/swr_tox_lv  
+cgeo = 1E-10/swr_tox_lv       cjswg = 1E-10/sw_rdsw_nmos_highvt            mjswg = 0.6 
+vsdfb = -5                    vsdth = -3                    csdmin = 1E-4                 
+cgsl = 4.5E-11/swr_tox_lv     cgdl = 4.5E-11/swr_tox_lv          ckappa = 0.6                  
+cf = 0                        clc = 5E-7                    cle = 0.6                     
+dlc = 3.7855E-8               llc = 0                       lwc = 0                       
+lwlc = 0                      dlbg = 0                      dwc = 0                       
+wlc = 0                       wwc = 0                       wwlc = 0                      
+dwbc = 9.102E-8               delvt = 0                     ldelvt = -8E-3                
+wdelvt = 7.2E-3               fbody = 0                     moin = 15                     
+cfrcoeff = 1                  noff = 1                      voffcv = -0.2                 
+minvcv = 0.06                 
//*** Temperature coefficient ***
+tnom = 27                     ute = -1.5                    kt1 = -0.231                  
+kt1l = -2E-8                  kt2 = 0.022                   ua1 = 1E-9                    
+ub1 = -1E-18                  uc1 = -5.6E-11                at = 1E4                      
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6                   
+prt = 0                       rth0 = 0.2                    ntrecf = 0                    
+ntrecr = 0                    xbjt = -0.05                  xdif = 1                      
+xrec = 1                      xtun = 0                      wth0 = 0                      
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37                  
//*** Unknown Parameters ***
+gatetype = h                  dskip = yes                   
ends nmos_1p2v_highvt_hg
******************************************************************
******************************************************************

inline subckt nmos_1p2v_highvt_sbc (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_sbc_as ( nf , w )
+ ad     = swf_fet_sbc_as ( nf , w )
+ pd     = swf_fet_sbc_ps ( nf , w )
+ ps     = swf_fet_sbc_ps ( nf , w )
  //    gate extra gate capacitance
parameters
+    pdbcp   = swf_psbcp_sbc (nf)
+    psbcp   = swf_psbcp_sbc (nf)
+    agbcp   = swf_agbcp_sbc (nf)
+    agbcp2  = swf_agbcp_sbc (nf)
+    aebcp   = swf_aebcp_sbc (nf)


nmos_1p2v_highvt_sbc (d g s b x) base_nmos_1p2v_highvt_bodytie
+ swx_align_poly = 0 nbc=0
+ l=l w=w nf=nf  ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nmos_1p2v_highvt_sbc
******************************************************************
******************************************************************

inline subckt nmos_1p2v_highvt (d g s b)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.255u
+       swx_insidew_ds    = 0.28u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as = swx_total_sdarea  * 0.5
+ ad = swx_total_sdarea  * 0.5
+ pd = swx_total_sdperim * 0.5
+ ps = swx_total_sdperim * 0.5
+    aebcp   = swx_active_area - (as+ad)


nmos_1p2v_highvt (d g s b) ps_nsoi2_lls 
+ l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
+ aebcp=aebcp

ends nmos_1p2v_highvt
******************************************************************
******************************************************************

inline subckt nmos_1p2v_highvt_tg (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 1
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)


nmos_1p2v_highvt_tg (d g s b x) base_nmos_1p2v_highvt_tg
+ l=l nf=nf  ad=ad as=as pd=pd ps=ps nbc=nbc
+ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp
+ delvto = sw_vth0_nmos_highvt + 0.1


model base_nmos_1p2v_highvt_tg  bsimsoi
//*** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     minr = 1E-60                  type = n                      
//*** Geometry Range Parameter ***
+lmax = 6E-7                   wmax = 5.1E-6                 
//*** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = 1E15                   
+ngate = 1E20                  ados = 3.5838                 bdos = 1.2                    
//*** Vth Related  Parameter ***
+vth0 = 0.468                  k1 = 0.145671                 k1w1 = 0                      
+k1w2 = 0                      k2 = -0.203174                k3 = 0                        
+k3b = 0                       kb1 = 1.5                     w0 = 2.5E-6                   
+lpe0 = 9.8E-8                 dvt0 = 0.8815                 dvt1 = 0.49265                
+dvt2 = -0.032                 dvt0w = 0.032                 dvt1w = 0                     
+dvt2w = 0                     dvtp0 = 1.3E-7                dvtp1 = 0                     
+dvtp2 = 0                     dvtp3 = 0                     dvtp4 = 0                     
+nlx = 1.74E-7                 
//*** Mobility Related Parameter ***
+u0 = 129 * sw_u0_nmos_highvt                 ua = 0                        ub = 0
+uc = 0                        vsat = 3.7E4                  lvsat = -396                  
+wvsat = 2.304E3               a0 = 0.22824                  ags = 0                       
+b0 = 0                        b1 = 0                        keta = 0                      
+ketas = 0                     a1 = 0                        a2 = 0.99                     
+rdsw = 60  * sw_rdsw_nmos_highvt           prwb = 0                      prwg = 0
+wr = 0.85                     
//*** Subthreshold Related Parameter ***
+voff = -3.47449E-2            lvoff = -3.1536E-3            wvoff = 3.942E-3              
+nfactor = 1.2                 eta0 = 1.97064E-2             etab = 0                      
+dsub = 0.0305                 cit = 0                       cdsc = 6.57E-3                
+cdscb = 0                     cdscd = -2E-3                 
//*** dW and dL Parameter ***
+lint = 1E-9 - sw_dvar_polycd                  ll = 0                        lln = 1 
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = -2.85E-8               dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
//*** Output Resistance Related Parameter ***
+pclm = 1.7                    lpclm = 0                     wpclm = 0.25                  
+pdiblc1 = 0.01                pdiblc2 = 0                   pdiblcb = 0                   
+drout = 7.8E-3                pvag = 0                      delta = 7.5E-3                
+alpha0 = 1E-8                 fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0                      sii2 = 0                      
+siid = 0                      agidl = 3.5E-13               lagidl = -1E-14               
+wagidl = 3E-14                bgidl = 1E8                   cgidl = 0                     
+egidl = 0.36                  ntun = 10                     ndiode = 1.5                  
+ndioded = 1.5                 nrecf0 = 1.6                  nrecf0d = 1.6                 
+nrecr0 = 10                   nrecr0d = 10                  isbjt = 1E-5                  
+idbjt = 1E-5                  isdif = 5.13E-8               iddif = 4.5E-8                
+isrec = 1E-4                  idrec = 1E-4                  istun = 1E-5                  
+ln = 1E-11                    vrec0 = 0.075                 vtun0 = 0                     
+nbjt = 1.215                  lbjt0 = 2E-7                  vabjt = 9.7                   
+aely = 0                      ahli = 1E-15                  rbody = 10                    
+rbsh = 100                    rhalo = 1E15                  minv = 1.088                  
+lminv = -0.017                wminv = 0.118                 
//*** Gate-to-body tunneling parameters ***
+aigc = 1.45236E-2             bigc = 0                      cigc = 1E-3                   
+aigsd = 1.12149E-2            laigsd = 0                    bigsd = 3.99425E-3            
+cigsd = 0.12088               nigc = 4                      pigcd = 0.5                   
+dlcig = 1E-9                  toxqm = 3.1E-9*swr_tox_lv                ntox = 1.024                  
+toxref = 1.8E-9               ebg = 1.15                    alphagb1 = 0.35               
+betagb1 = 1E-4                vgb1 = 200                    vevb = 0.3                    
+alphagb2 = 0.6136             betagb2 = 0.06                vgb2 = 200                    
+vecb = 3                      
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.36E-10/swr_tox_lv    cgdo = 3.36E-10/swr_tox_lv  
+cgeo = 1E-10/swr_tox_lv       cjswg = 1E-10/sw_rdsw_nmos_highvt            mjswg = 0.6 
+vsdfb = -5                    vsdth = -3                    csdmin = 1E-4                 
+cgsl = 4.5E-11/swr_tox_lv     cgdl = 4.5E-11/swr_tox_lv          ckappa = 0.6                  
+cf = 0                        clc = 5E-7                    cle = 0.6                     
+dlc = 3.7855E-8               llc = 0                       lwc = 0                       
+lwlc = 0                      dlbg = 0                      dwc = 0                       
+wlc = 0                       wwc = 0                       wwlc = 0                      
+dwbc = 9.102E-8               delvt = 0                     ldelvt = -8E-3                
+wdelvt = 7.2E-3               fbody = 0                     moin = 15                     
+cfrcoeff = 1                  noff = 1                      voffcv = -0.2                 
+minvcv = 0.06                 
//*** Temperature coefficient ***
+tnom = 27                     ute = -1.5                    kt1 = -0.231                  
+kt1l = -2E-8                  kt2 = 0.022                   ua1 = 1E-9                    
+ub1 = -1E-18                  uc1 = -5.6E-11                at = 1E4                      
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6                   
+prt = 0                       rth0 = 0.2                    ntrecf = 0                    
+ntrecr = 0                    xbjt = -0.05                  xdif = 1                      
+xrec = 1                      xtun = 0                      wth0 = 0                      
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37                  
//*** Unknown Parameters ***
+gatetype = h                  dskip = yes                   


ends nmos_1p2v_highvt_tg
******************************************************************
******************************************************************

inline subckt nmos_1p2v_lowvt_hg (d g s b x)

parameters l=0.1u w=0.5u nf=1 
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 2
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)
 

nmos_1p2v_lowvt_hg (d g s b x) base_nmos_1p2v_lowvt_bodytie  
+ swx_align_poly=0 nbc=nbc
+ l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nmos_1p2v_lowvt_hg
******************************************************************
******************************************************************

inline subckt nmos_1p2v_lowvt_sbc (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_sbc_as ( nf , w )
+ ad     = swf_fet_sbc_as ( nf , w )
+ pd     = swf_fet_sbc_ps ( nf , w )
+ ps     = swf_fet_sbc_ps ( nf , w )
  //    gate extra gate capacitance
parameters
+    pdbcp   = swf_psbcp_sbc (nf)
+    psbcp   = swf_psbcp_sbc (nf)
+    agbcp   = swf_agbcp_sbc (nf)
+    agbcp2  = swf_agbcp_sbc (nf)
+    aebcp   = swf_aebcp_sbc (nf)


nmos_1p2v_lowvt_sbc (d g s b x) base_nmos_1p2v_lowvt_bodytie
+ swx_align_poly=0 nbc=0
+ l=l w=w nf=nf  ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nmos_1p2v_lowvt_sbc
******************************************************************
******************************************************************

inline subckt nmos_1p2v_lowvt (d g s b)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters
parameters
+	swx_outsidew_ds   = 0.255u
+	swx_insidew_ds    = 0.28u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds 
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as = swx_total_sdarea  * 0.5 
+ ad = swx_total_sdarea  * 0.5
+ pd = swx_total_sdperim * 0.5
+ ps = swx_total_sdperim * 0.5
+    aebcp   = swx_active_area - (as+ad)


nmos_1p2v_lowvt (d g s b) ps_nsoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
+aebcp=aebcp

ends nmos_1p2v_lowvt
******************************************************************

inline subckt nmos_1p2v_lowvt_tg (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 1
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)
  //    Target adjustments
+ swx_vth0 = -0.095
+ swx_wvth0 = 1.3
+ swx_lvth0 = 1.4
+ swx_u0   = 1.05
+ swx_vsat = 1.05
+ swx_wint  = -2e-8
+ swx_cg_tg = 0.816   // H-gate data extra H-bar overlap correction

nmos_1p2v_lowvt_tg (d g s b x) base_nmos_1p2v_lowvt_tg
+ l=l nf=nf  ad=ad as=as pd=pd ps=ps  nbc=nbc
+ w=(w-sw_dvar_active-sw_dvar_polycd)*nf 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp
+ delvto = sw_vth0_nmos_lowvt

model base_nmos_1p2v_lowvt_tg bsimsoi
//*** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 0                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 1                     type = n                      
//*** Geometry Range Parameter ***
+lmin = 5E-8                   lmax = 4.1E-6                 wmin = 2E-7                   
+wmax = 5.1E-6                 
//*** Process Parameter ***
+tsi = 3E-8                    tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1.5E18                  nsub = 1E15                   
+ngate = 1E20                  ados = 3.034                  bdos = 0.6                    
//*** Vth Related  Parameter ***
+vth0 = 0.353 + swx_vth0  
+lvth0 = 3.7E-3*swx_lvth0      
+wvth0 = 3.13568E-2*(1+1e7*sw_align_poly)*swx_wvth0 
+pvth0 = -2.3E-3               k1 = 0.2                      k1w1 = 0                      
+k1w2 = 0                      k2 = 0.2245                   k3 = 76.9                     
+k3b = 434.4                   kb1 = 1.5                     w0 = 2.5E-6                   
+lpe0 = 1.581E-7               dvt0 = 2.2                    ldvt0 = 0                     
+wdvt0 = 0.04                  dvt1 = 0.6136                 dvt2 = -0.032                 
+dvt0w = 0                     dvt1w = 0                     dvt2w = 0                     
+nlx = 1.74E-7                 
//*** Mobility Related Parameter ***
+u0 = 187.282057 * sw_u0_nmos_lowvt * swx_u0              
+lu0 = -4.275293               wu0 = 4.62 
+pu0 = -0.2998                 ua = 1E-10                    ub = 2.5E-19                  
+eu = 1.67                     vsat = 4.29536E5 *swx_vsat         lvsat = -2.365248E4           
+wvsat = 2.58825E3             b0 = 0                        b1 = 0                        
+keta = 0                      ketas = 0                     a1 = 0                        
+a2 = 0.99                     rdsw = 77.4 * sw_rdsw_nmos_lowvt                   wrdsw = -7.92                 
+prwb = 0                      prwg = 0                      
//*** Subthreshold Related Parameter ***
+voff = -0.09                  lvoff = -8.512E-3             wvoff = -8.337135E-3          
+pvoff = 2.4342E-4             nfactor = 0.282395            lnfactor = 0.057              
+eta0 = 0                      leta0 = 1.875E-3              etab = 0                      
+dsub = 0.05                   cit = 0                       cdsc = 8.64E-3                
+cdscb = 0                     cdscd = -2E-3                 
//*** dW and dL Parameter ***
+lint = 1E-8                   ll = 0                        lln = 1                       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = 0 + swx_wint
+dwg = 0                       dwb = 0                       
//*** Output Resistance Related Parameter ***
+pclm = 1                      lpclm = 0                     wpclm = 0                     
+pdiblc1 = 0.021               pdiblc2 = 0                   pdiblcb = 0                   
+drout = 7.8E-3                pvag = -0.12                  delta = 0.02                  
+cgidl = 2                     egidl = 1                     ntun = 10                     
+ndiode = 1                    ndioded = 1                   nrecf0 = 1.6                  
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10                  
+isbjt = 1E-5                  idbjt = 1E-5                  isdif = 5.13E-8               
+iddif = 4.5E-8                isrec = 1E-4                  idrec = 1E-4                  
+istun = 1E-5                  ln = 1E-11                    vrec0 = 0.075                 
+vtun0 = 0                     nbjt = 1.215                  lbjt0 = 2E-7                  
+vabjt = 9.7                   aely = 0                      ahli = 1E-15                  
+rbody = 10                    rbsh = 100                    rhalo = 1E15                  
+minv = -0.3875*1.6                lminv = 0.025*0.9                  wminv = -0.09                 
//*** Gate-to-body tunneling parameters ***
+aigc = 0.43                   bigc = 0                      cigc = 0.0273                 
+aigsd = 0.011528              bigsd = 7E-4                  cigsd = 9.00909E-2            
+nigc = 4                      pigcd = 0.5                   poxedge = 1                   
+dlcig = 8.6E-10               toxqm = 1.8E-9                ntox = 1.024                  
+toxref = 1.8E-9               ebg = 1.15                    alphagb1 = 0.64               
+betagb1 = 0                   vgb1 = 200                    vevb = 0.3                    
+alphagb2 = 1.0136             betagb2 = 0.06                vgb2 = 200                    
+vecb = 3                      
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.2648E-10/swr_tox_lv*swx_cg_tg   cgdo = 3.2648E-10/swr_tox_lv*swx_cg_tg 
+cgeo = 2.3E-10/swr_tox_lv*swx_cg_tg     
+cjswg = 1E-10/sw_rdsw_nmos_lowvt                 mjswg = 0.6                   
+vsdfb = -5                    vsdth = -3                    csdmin = 1E-4                 
+cgsl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg            
+cgdl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg 
+ckappa = 0.6                  cf = 0                        clc = 5E-7                    
+cle = 0.6                     dlc = 3.92E-8                 llc = 0                       
+dlbg = 0                      dwc = 0                       dwbc = 8E-8                   
+delvt = 3.39434E-2            ldelvt = -7.094297E-3         wdelvt = 0.01476              
+fbody = 0                     noff = 0.63                   voffcv = -0.189504            
+minvcv = 0.507402             lminvcv = 0.3                 
//*** Temperature coefficient ***
+tnom = 27                     ute = -1.26                   kt1 = -0.1358                 
+kt1l = 3E-9                   kt2 = 0.022                   ua1 = 0                       
+ub1 = 0                       uc1 = -5.6E-11                at = 0                        
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6                   
+prt = 0                       rth0 = 0.2                    ntrecf = 0                    
+ntrecr = 0                    xbjt = -0.05                  xdif = 1                      
+xrec = 1                      xtun = 0                      wth0 = 0                      
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37
ends nmos_1p2v_lowvt_tg 
******************************************************************
******************************************************************

inline subckt nmos_1p8v_sbc (d g s e p)

parameters l=0.2u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sarea   = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_darea   = (w+0.3u) * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sperim  = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_total_dperim  = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical, instance parameters:
parameters
+    as      = swx_total_sarea  * 0.5
+    ad      = swx_total_darea  * 0.5
+    pd      = swx_total_dperim * 0.5
+    ps      = swx_total_sperim * 0.5
  //    H-gate extra gate capacitance
parameters
+    pdbcp   = 0.15e-6 * nf
+    psbcp   = 0
+    agbcp   = 0.15e-6 * 0.075e-6 * nf
+    agbcp2  = 0.15e-6 * 0.075e-6 * nf
+    aebcp   = 4*0.15e-6*0.225e-6
// +    aebcp   = swx_active_area - (as+ad)


nmos_1p8v_sbc  (d g s e p) nmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp

ends nthick_sbc

// -----------------------------------------------------------

inline subckt nmos_1p8v_tg (d g s e p)

parameters l=0.2u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = 0.5*(swx_total_sdperim-2*w)
+ psbcp  = 0.5*(swx_total_sdperim-2*w)
+ agbcp  = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
// + aebcp  = swx_active_area - (as+ad)

nmos_1p8v_tg  (d g s e p) nmos_1p8v_base l=l 
+ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly  
+ nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nthick_tg

// -----------------------------------------------------------

inline subckt nmos_1p8v_hg (d g s e p)

parameters l=0.2u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = swx_total_sdperim-2*w 
+ psbcp  = swx_total_sdperim-2*w
+ agbcp  = (swx_total_sdperim-2*w ) * 0.075e-6  
+ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
// + aebcp  = swx_active_area - (as+ad)


nmos_1p8v_hg  (d g s e p) nmos_1p8v_base l=l w=w-2*sw_dvar_polycd  nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nthick_hg


// ===========================================================================

inline subckt nmos_1p8v_base (d g s e p)

parameters l w nf  as ad ps pd  pdbcp psbcp agbcp agbcp2  aebcp

nmos_1p8v_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


model nmosthick  bsimsoi 
//*** Flag Parameter ***
+version = 4.5                 soimod = 0                    shmod = 1
+binunit = 1                   paramchk = 0                  mobmod = 4
+capmod = 3                    rdsmod = 1                    igcmod = 1
+igbmod = 1                    rgatemod = 1                  rbodymod = 0
+fnoimod = 1                   tnoimod = 0                   mtrlmod = 0
+vgstcvmod = 1                 gidlmod = 0                   iiimod = 0
+fdmod = 0                     minr = 1E-60                  type = n
//*** Geometry Range Parameter ***
+lmin = 0.15u                  lmax = 0.4u                    wmin = 0
+wmax = 1
//*** Process Parameter ***
+tsi = 3.06E-8                 tbox = 1.4E-7                 tox = sw_tox_hv
+dtoxcv = 0                    xj = 3E-8
+nch = 5E17                    nsub = 5E14                   ngate = 1.4E20
+nsd = 5E20                    eot = 6.2E-9                  epsrox = 3.9
+vddeot = 1.5                  leffeot = 1                   weffeot = 10
+tempeot = 300.03              phig = 4.05                   easub = 2.268
+epsrsub = 5.85                epsrgate = 6.669              ni0sub = 6.000014E15
+bg0sub = 0.833106             ados = 2.258187               bdos = 0.895351
+etsi = 3.06E-8
//*** Vth Related  Parameter ***
+vth0 = 0.669911  + sw_vth0_nthick              k1 = 0.85065                  k1w1 = 0
+k1w2 = 0                      k2 = -0.0186                  k3 = 0
+k3b = 0                       kb1 = 1                       w0 = 2.5E-6
+lpe0 = 1.319843E-8            lpeb = 0                      dvt0 = 0
+dvt1 = 0.795                  dvt2 = -0.032                 dvt0w = 0
+dvt1w = 5.3E6                 dvt2w = -0.032                vfb = -1
+dvtp0 = 0                     dvtp1 = 0                     dvtp2 = 0
+dvtp3 = 0                     dvtp4 = 0                     vsce = 0
+cdsbs = 0
//*** Mobility Related Parameter ***
+u0 = 1.50207E-2 * sw_u0_nthick              ua = 2.25E-9                  ub = 5.87E-19
+uc = -4.65E-11                ud = 0                        eu = 1.67
+ucs = 1.67                    vsat = 4.975669E4             lvsat = 3.936906E3
+a0 = 0.106174                 la0 = 5.92427E-2              ags = -0.674281
+lags = 0.163408               b0 = 0                        b1 = 0
+keta = -0.6                   lketa = 0                     ketas = 0
+a1 = 0                        a2 = 1                        rdsw = 168 * sw_rdsw_nthick
+rdw = 50                      rdwmin = 0                    rsw = 50
+rswmin = 0                    prwb = 0                      prwg = 0
+wr = 1
//*** Subthreshold Related Parameter ***
+voff = 0                      lvoff = -3.15587E-2           nfactor = 0.784
+eta0 = 0.09                   leta0 = 0                     etab = -0.07
+eta0cv = 0.08                 etabcv = -0.07                dsub = 0.56
+cit = 3.62E-4                 cdsc = 2.4E-4                 cdscb = 0
+cdscd = 0
//*** dW and dL Parameter ***
+lint = 0 - sw_dvar_polycd                      ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -2.85E-8               dwg = 0                       dwb = 0
+wl = 0                        wln = 1                       ww = 0
+wwn = 1                       wwl = 0                       xw = 0
+xl = 0
//*** Output Resistance Related Parameter ***
+pclm = 2.924809               pdiblc1 = 1.95E-10            pdiblc2 = 4.3E-3
+pdiblcb = 0                   drout = 0.6104                pvag = -0.590676
+delta = 8.3E-3                alpha0 = 0                    fbjtii = 0
+beta0 = 0                     beta1 = 0                     beta2 = 0.1
+vdsatii0 = 0.9                tii = 0                       lii = 0
+esatii = 1E7                  sii0 = 0.5                    sii1 = 0.1
+sii2 = 0                      siid = 0                      agidl = 0
+bgidl = 2.3E9                 cgidl = 0.5                   egidl = 1.2
+rgidl = 1                     kgidl = 0                     fgidl = 0
+agisl = 0                     bgisl = 2.3E9                 cgisl = 0
+egisl = 1.2                   rgisl = 1                     kgisl = 0
+fgisl = 0                     ntun = 10                     ntund = 10
+ndiode = 1                    ndioded = 1                   nrecf0 = 2
+nrecf0d = 2                   nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-6                  idbjt = 1E-6                  isdif = 0
+iddif = 0                     isrec = 1E-5                  idrec = 1E-5
+istun = 0                     idtun = 0                     ln = 2E-6
+vrec0 = 0                     vrec0d = 0                    vtun0 = 0
+vtun0d = 0                    nbjt = 1                      lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 0
+ahlid = 0                     rbody = 0                     rbsh = 0
+rsh = 0                       rhalo = 1E15                  pdits = 1E-20
+pditsl = 0                    pditsd = 0                    fprout = 0
+minv = 1.23                   frbody = 1                    ebjtii = 0
+cbjtii = 0                    vbci = 0                      abjtii = 0
+mbjtii = 0.4
//*** Gate-to-body tunneling parameters ***
+aigc = 0.43                   bigc = 0.054                  cigc = 0.075
+aigsd = 0.43                  bigsd = 0.054                 cigsd = 0.075
+nigc = 1                      pigcd = 1                     poxedge = 1
+dlcig = 0                     toxqm = 1E-8                  ntox = 1
+toxref = 6.2E-9               ebg = 1.2                     alphagb1 = 0.35
+betagb1 = 0.03                vgb1 = 300                    vevb = 0.075
+alphagb2 = 0.43               betagb2 = 0.05                vgb2 = 17
+vecb = 0.026                  voxh = 5                      deltavox = 5E-3
+aigbcp2 = 0.043               bigbcp2 = 5.4E-3              cigbcp2 = 7.5E-3
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 5.767067E-11/swr_tox_hv    cgdo = 5.767067E-11/swr_tox_hv
+cgeo = 2.834954E-11/swr_tox_hv      cjswg = 1E-10/sqrt(sw_rdsw_nthick)       mjswg = 0.6
+cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick)     cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick)  ckappa = 7.880675
+cf = 0              clc = 3.05E-7                 cle = 0.6
+dlc = 2.124684E-8             llc = 0                       dlbg = 1E-8
+dwc = 0                       delvt = 0                     fbody = 0.948281
+moin = 25                     voffcv = 0
//*** Temperature coefficient ***
+tnom = 27                     ute = -2.278199               lute = -0.076915
+ucste = -4.775E-3             ud1 = 0                       kt1 = -0.455906
+kt1l = -8.0494E-10            kt2 = 0.022                   ua1 = 2.316625E-9
+ub1 = -7.61E-18               uc1 = -5.6E-11                at = 2.4E4
+lat = 0                       tcjswg = 0                    tpbswg = 0
+tcjswgd = 0                   tpbswgd = 0                   cth0 = 1E-5
+prt = 0.474662                rth0 = 0                      ntrecf = 0
+ntrecr = 0                    xbjt = 1                      xdif = 1
+xrec = 1                      xtun = 0                      xdifd = 1
+xrecd = 1                     xtund = 0                     wth0 = 0
+tvbci = 0                     tbgasub = 7.02E-4             tbgbsub = 1.108E3
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 1                      nofffd = 1                    vofffd = 0
+k1b = 1                       k2b = 0                       dk2b = 0
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3
+vbs0pd = 0                    vbs0fd = 0.25
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1
+ngcon = 1                     xgw = 0                       xgl = 0
+rbsb = 50                     rbdb = 50                     gbmin = 1E-12
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5
+rnoia = 0.577                 rnoib = 0.37
//*** Stress Effect Related Parameter ***
+saref = 1E-6                  sbref = 1E-6                  wlod = 0
+ku0 = 0                       kvsat = 0                     kvth0 = 0
+tku0 = 0                      llodku0 = 0                   wlodku0 = 0
+llodvth = 0                   wlodvth = 0                   stk2 = 0
+lodk2 = 1                     steta0 = 0                    lodeta0 = 1
+steta0cv = 0                  lodeta0cv = 1
//***Material Properties***
+eggbcp2 = 1.12                eggdep = 1.12                 agb1 = 3.7622E-7
+bgb1 = -3.1051E10             agb2 = 4.9758E-7              bgb2 = -2.357E10
+agbc2n = 3.4254E-7            agbc2p = 4.9723E-7            bgbc2n = 1.1665E12
+bgbc2p = 7.4567E11            vtm00 = 0.026


ends nmosthick  
******************************************************************
******************************************************************

inline subckt nmos_3p3v_sbc (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sarea   = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_darea   = (w+0.3u) * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sperim  = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_total_dperim  = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical, instance parameters:
parameters
+    as      = swx_total_sarea  * 0.5
+    ad      = swx_total_darea  * 0.5
+    pd      = swx_total_dperim * 0.5
+    ps      = swx_total_sperim * 0.5
  //    H-gate extra gate capacitance
parameters
+    pdbcp   = 0.15e-6 * nf
+    psbcp   = 0
+    agbcp   = 0.15e-6 * 0.075e-6 * nf
+    agbcp2  = 0.15e-6 * 0.075e-6 * nf
+    aebcp   = 4*0.15e-6*0.225e-6
// +    aebcp   = swx_active_area - (as+ad)


nmos_3p3v_sbc  (d g s e p) nthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp

ends nthick_sbc

// -----------------------------------------------------------

inline subckt nmos_3p3v_tg (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = 0.5*(swx_total_sdperim-2*w)
+ psbcp  = 0.5*(swx_total_sdperim-2*w)
+ agbcp  = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
// + aebcp  = swx_active_area - (as+ad)

nmos_3p3v_tg  (d g s e p) nthick_base l=l 
+ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly  
+ nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nthick_tg

// -----------------------------------------------------------

inline subckt nmos_3p3v_hg (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = swx_total_sdperim-2*w 
+ psbcp  = swx_total_sdperim-2*w
+ agbcp  = (swx_total_sdperim-2*w ) * 0.075e-6  
+ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
// + aebcp  = swx_active_area - (as+ad)


nmos_3p3v_hg  (d g s e p) nthick_base l=l w=w-2*sw_dvar_polycd  nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends nthick_hg


// ===========================================================================

inline subckt nthick_base (d g s e p)

parameters l w nf  as ad ps pd  pdbcp psbcp agbcp agbcp2  aebcp

nthick_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


model nmosthick  bsimsoi 
//*** Flag Parameter ***
+version = 4.5                 soimod = 0                    shmod = 1
+binunit = 1                   paramchk = 0                  mobmod = 4
+capmod = 3                    rdsmod = 0                    igcmod = 1
+igbmod = 1                    rgatemod = 1                  rbodymod = 0
+fnoimod = 1                   tnoimod = 0                   mtrlmod = 0
+vgstcvmod = 1                 gidlmod = 0                   iiimod = 0
+fdmod = 0                     minr = 1E-60                  type = n
//*** Geometry Range Parameter ***
+lmin = 0                      lmax = 5.1                    wmin = 0
+wmax = 1
//*** Process Parameter ***
+tsi = 3.06E-8                 tbox = 1.4E-7                 tox = sw_tox_hv
+                dtoxcv = 0                    xj = 3E-8
+nch = 5E17                    nsub = 5E14                   ngate = 1.4E20
+nsd = 5E20                    eot = 6.2E-9                  epsrox = 3.9
+vddeot = 1.5                  leffeot = 1                   weffeot = 10
+tempeot = 300.03              phig = 4.05                   easub = 2.268
+epsrsub = 5.85                epsrgate = 6.669              ni0sub = 6.000014E15
+bg0sub = 0.833106             ados = 2.258187               bdos = 0.895351
+etsi = 3.06E-8
//*** Vth Related  Parameter ***
+vth0 = 0.707 + sw_vth0_nthick                  k1 = 0.795                    k1w1 = 0
+k1w2 = 0                      k2 = -0.0186                  k3 = 0
+k3b = 0                       kb1 = 1                       w0 = 2.5E-6
+lpe0 = 9.7E-9                 lpeb = 0                      dvt0 = 2.266
+dvt1 = 0.795                  dvt2 = -0.032                 dvt0w = 0
+dvt1w = 5.3E6                 dvt2w = -0.032                vfb = -1
+dvtp0 = 0                     dvtp1 = 0                     dvtp2 = 0
+dvtp3 = 0                     dvtp4 = 0                     vsce = 0
+cdsbs = 0
//*** Mobility Related Parameter ***
+u0 = 1.59795E-2*sw_u0_nthick               ua = 2.25E-9                  ub = 5.87E-19
+uc = -4.65E-11                ud = 0                        eu = 1.67
+ucs = 1.67                    vsat = 1.099198E5             lvsat = -1.017526E4
+a0 = 0.106174                 la0 = 5.92427E-2              ags = -0.674281
+lags = 0.163408               b0 = 0                        b1 = 0
+keta = -0.6                   lketa = 0                     ketas = 0
+a1 = 0                        a2 = 1                        rdsw = 112 * sw_rdsw_nthick
+rdw = 50                      rdwmin = 0                    rsw = 50
+rswmin = 0                    prwb = 0                      prwg = 0
+wr = 1
//*** Subthreshold Related Parameter ***
+voff = 0                      lvoff = -3.15587E-2           nfactor = 1.12
+eta0 = 1E-3                   etab = -0.07                  eta0cv = 0.08
+etabcv = -0.07                dsub = 0.56                   cit = 3.62E-4
+cdsc = 2.4E-4                 cdscb = 0                     cdscd = 0
//*** dW and dL Parameter ***
+lint = 0 - sw_dvar_polycd                      ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -2.85E-8               dwg = 0                       dwb = 0
+wl = 0                        wln = 1                       ww = 0
+wwn = 1                       wwl = 0                       xw = 0
+xl = 0
//*** Output Resistance Related Parameter ***
+pclm = 2.924809               pdiblc1 = 1.95E-10            pdiblc2 = 4.3E-3
+pdiblcb = 0                   drout = 0.6104                pvag = -0.590676
+delta = 8.3E-3                alpha0 = 0                    fbjtii = 0
+beta0 = 0                     beta1 = 0                     beta2 = 0.1
+vdsatii0 = 0.9                tii = 0                       lii = 0
+esatii = 1E7                  sii0 = 0.5                    sii1 = 0.1
+sii2 = 0                      siid = 0                      agidl = 0
+bgidl = 2.3E9                 cgidl = 0.5                   egidl = 1.2
+rgidl = 1                     kgidl = 0                     fgidl = 0
+agisl = 0                     bgisl = 2.3E9                 cgisl = 0
+egisl = 1.2                   rgisl = 1                     kgisl = 0
+fgisl = 0                     ntun = 10                     ntund = 10
+ndiode = 1                    ndioded = 1                   nrecf0 = 2
+nrecf0d = 2                   nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-6                  idbjt = 1E-6                  isdif = 0
+iddif = 0                     isrec = 1E-5                  idrec = 1E-5
+istun = 0                     idtun = 0                     ln = 2E-6
+vrec0 = 0                     vrec0d = 0                    vtun0 = 0
+vtun0d = 0                    nbjt = 1                      lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 0
+ahlid = 0                     rbody = 1000                     rbsh = 0
+rsh = 0                       rhalo = 1E15                  pdits = 1E-20
+pditsl = 0                    pditsd = 0                    fprout = 0
+minv = 0                      frbody = 1                    ebjtii = 0
+cbjtii = 0                    vbci = 0                      abjtii = 0
+mbjtii = 0.4
//*** Gate-to-body tunneling parameters ***
+aigc = 0.43                   bigc = 0.054                  cigc = 0.075
+aigsd = 0.43                  bigsd = 0.054                 cigsd = 0.075
+nigc = 1                      pigcd = 1                     poxedge = 1
+dlcig = 0                     toxqm = 1E-8                  ntox = 1
+toxref = 6.2E-9               ebg = 1.2                     alphagb1 = 0.35
+betagb1 = 0.03                vgb1 = 300                    vevb = 0.075
+alphagb2 = 0.43               betagb2 = 0.05                vgb2 = 17
+vecb = 0.026                  voxh = 5                      deltavox = 5E-3
+aigbcp2 = 0.043               bigbcp2 = 5.4E-3              cigbcp2 = 7.5E-3
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 5.767067E-11/swr_tox_hv    cgdo = 5.767067E-11/swr_tox_hv
+cgeo = 2.834954E-11/swr_tox_hv      cjswg = 1E-10/sqrt(sw_rdsw_nthick)       mjswg = 0.6
+cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick)     cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick)  ckappa = 7.880675
+cf = 0              clc = 3.05E-7                 cle = 0.6
+dlc = 2.124684E-8             llc = 0                       dlbg = 1E-8
+dwc = 0                       delvt = 0                     fbody = 0.948281
+moin = 25                     voffcv = 0
//*** Temperature coefficient ***
+tnom = 27                     ute = -2.15594                lute = 0
+ucste = -4.775E-3             ud1 = 0                       kt1 = -5.72707E-2
+kt1l = -8.554249E-8           kt2 = 0.022                   ua1 = 2.155E-9
+ub1 = -7.61E-18               uc1 = -5.6E-11                at = 32.04948
+tcjswg = 0                    tpbswg = 0                    tcjswgd = 0
+tpbswgd = 0                   cth0 = 1E-5                   prt = 0.474662
+rth0 = 0                      ntrecf = 0                    ntrecr = 0
+xbjt = 1                      xdif = 1                      xrec = 1
+xtun = 0                      xdifd = 1                     xrecd = 1
+xtund = 0                     wth0 = 0                      tvbci = 0
+tbgasub = 7.02E-4             tbgbsub = 1.108E3
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 1                      nofffd = 1                    vofffd = 0
+k1b = 1                       k2b = 0                       dk2b = 0
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3
+vbs0pd = 0                    vbs0fd = 0.25
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1
+ngcon = 1                     xgw = 0                       xgl = 0
+rbsb = 50                     rbdb = 50                     gbmin = 1E-12
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5
+rnoia = 0.577                 rnoib = 0.37
//*** Stress Effect Related Parameter ***
+saref = 1E-6                  sbref = 1E-6                  wlod = 0
+ku0 = 0                       kvsat = 0                     kvth0 = 0
+tku0 = 0                      llodku0 = 0                   wlodku0 = 0
+llodvth = 0                   wlodvth = 0                   stk2 = 0
+lodk2 = 1                     steta0 = 0                    lodeta0 = 1
+steta0cv = 0                  lodeta0cv = 1
//***Material Properties***
+eggbcp2 = 1.12                eggdep = 1.12                 agb1 = 3.7622E-7
+bgb1 = -3.1051E10             agb2 = 4.9758E-7              bgb2 = -2.357E10
+agbc2n = 3.4254E-7            agbc2p = 4.9723E-7            bgbc2n = 1.1665E12
+bgbc2p = 7.4567E11            vtm00 = 0.026


ends nmosthick  
******************************************************************
******************************************************************

inline subckt pmos_1p2v_highvt_hg (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 2
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)


pmos_1p2v_highvt_hg (d g s b x) base_pmos_1p2v_highvt_hg 
+ nf=nf  ad=ad as=as pd=pd ps=ps nbc=nbc
+ l=l w=(w-2*sw_dvar_polycd) * nf
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp
+ delvto = sw_vth0_pmos_highvt - 0.05

model base_pmos_1p2v_highvt_hg  bsimsoi
//*** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     type = p                      
//*** Geometry Range Parameter ***
+lmax = 5.1E-6                 wmax = 5.1E-6                 
//*** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15                  
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144                
//*** Vth Related  Parameter ***
+vth0 = -0.62                  k1 = 0.5644                   k1w1 = -2E-8                  
+k1w2 = 0                      k2 = 0                        k3 = -1.84                    
+k3b = 0                       kb1 = 0                       w0 = 1E-9                     
+lpe0 = -1.29E-8               lpeb = -2E-8                  dvt0 = 0.64                   
+dvt1 = 0.21186                dvt2 = 0.391                  dvt0w = -0.24                 
+dvt1w = 1E5                   dvt2w = 0                     dvtp0 = 1E-8                  
+dvtp1 = 0                     dvtp2 = 0                     dvtp3 = 0                     
+dvtp4 = 0                     cdsbs = 1E-3                  
//*** Mobility Related Parameter ***
+u0 = 25 * (sw_u0_pmos_highvt**0.8)                      ua = 0                        ub = 0 
+uc = -7.4E-10                 vsat = 1E6                    a0 = 0.372                    
+ags = 0                       b0 = 0                        b1 = 0                        
+keta = 0                      ketas = 0                     a1 = 0                        
+a2 = 1                        rdsw = 60 *sw_rdsw_pmos_highvt                     prwb = 0  
+prwg = 0                      wr = 0.85                     
//*** Subthreshold Related Parameter ***
+voff = -0.05256               nfactor = 3.2155              eta0 = 0.074                  
+etab = -0.07                  dsub = 0.1                    cit = 0                       
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3                 
//*** dW and dL Parameter ***
+lint = -8E-9 - sw_dvar_polycd                 ll = 0                        lln = 1       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = 3E-9                   dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
//*** Output Resistance Related Parameter ***
+pclm = 0.675                  lpclm = 0                     wpclm = 0.5                   
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0                   
+drout = 0.571                 pvag = 0                      delta = 0.045                 
+alpha0 = 0                    fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0.1                    sii2 = 0                      
+siid = 0                      agidl = 1E-12                 bgidl = 9E8                   
+cgidl = 0                     egidl = 0                     agisl = 0                     
+bgisl = 1E9                   egisl = 1.2                   ntun = 10                     
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6                  
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10                  
+isbjt = 6.155E-4              idbjt = 7E-5                  isdif = 4.5E-8                
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4                  
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025                 
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7                  
+vabjt = 10                    aely = 0                      ahli = 1E-15                  
+rbody = 10                    rbsh = 100                    rhalo = 1E15                  
+minv = 0                      
//*** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1                    
+aigsd = 8.8E-3                bigsd = 7E-4                  cigsd = 0.0905                
+nigc = 1                      pigcd = 1                     dlcig = 5E-9                  
+toxqm = sw_tox_lv                ntox = 4.5                    toxref = 1.8e-9
+ebg = 1.2                     alphagb1 = 0.74               betagb1 = 0.03                
+vgb1 = 300                    vevb = 0.075                  alphagb2 = 0.43               
+betagb2 = 0.05                vgb2 = 17                     vecb = 0.026                  
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv              cgdo = 3.5E-10/swr_tox_lv 
+cgeo = 5.0e-10/swr_tox_lv     cjswg = 8.6E-11/sw_rdsw_pmos_lowvt         mjswg = 0.5                   
+vsdfb = -4                    vsdth = -2                    csdmin = 1E-4                 
+cgsl = 3E-10/swr_tox_lv       cgdl = 3E-10/swr_tox_lv           ckappa = 0.95  
+cf = 0                        clc = 1E-8                    cle = 0                       
+dlc = -3.98159E-8             
// +llc = 1.209E-16               lwc = 0                       
//+lwlc = 0                      dlbg = 0                      
+ dwc = -7.8E-8                 
+delvt = -0.028                fbody = 0                     acde = 1                      
+moin = 500                    noff = 1.23                   voffcv = -0.5                 
+minvcv = 0.3                  lminvcv = -0.054              wminvcv = 0.3                 
//*** Temperature coefficient ***
+tnom = 27                     ute = -0.6396                   ucste = -9.2E-3               
+ud1 = 0                       kt1 = -0.2755                 kt1l = 2.2E-9                 
+kt2 = -0.3                    ua1 = 0                       ub1 = 0                       
+uc1 = 0                       at = 3.4E4                    tcjswg = 0                    
+cth0 = 0                      prt = 0                       rth0 = 0.2                    
+ntrecf = 0                    ntrecr = 0                    xbjt = 1.15                   
+xdif = 1.11                   xrec = 0.9                    xtun = 0                      
+xrecd = 1                     wth0 = 4E-6                   
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 2                       k2b = 0.5                     dk2b = 0.3                    
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6                  
//*** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1                    
+ngcon = 2                     xgw = 0                       xgl = 0                       
+gbmin = 1E-12                 
//*** Unknown Parameters ***
+gatetype = non_h              dskip = yes                   


ends pmos_1p2v_highvt_hg
******************************************************************
******************************************************************

inline subckt pmos_1p2v_highvt_sbc (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_sbc_as ( nf , w )
+ ad     = swf_fet_sbc_as ( nf , w )
+ pd     = swf_fet_sbc_ps ( nf , w )
+ ps     = swf_fet_sbc_ps ( nf , w )
  //    gate extra gate capacitance
parameters
+    pdbcp   = swf_psbcp_sbc (nf)
+    psbcp   = swf_psbcp_sbc (nf)
+    agbcp   = swf_agbcp_sbc (nf)
+    agbcp2  = swf_agbcp_sbc (nf)
+    aebcp   = swf_aebcp_sbc (nf)


pmos_1p2v_highvt_sbc (d g s b x) base_pmos_1p2v_highvt_bodytie
+ swx_align_poly = 0  nbc=0
+ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_1p2v_highvt_sbc
******************************************************************
******************************************************************

inline subckt pmos_1p2v_highvt (d g s b)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.255u
+       swx_insidew_ds    = 0.28u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
   // Taking average since S/D are symmetrical
parameters
+ as = swx_total_sdarea  * 0.5
+ ad = swx_total_sdarea  * 0.5
+ pd = swx_total_sdperim * 0.5
+ ps = swx_total_sdperim * 0.5


pmos_1p2v_highvt (d g s b) ps_psoi2_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps

ends pmos_1p2v_highvt
******************************************************************
******************************************************************

inline subckt pmos_1p2v_highvt_tg (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 1
+ swx_align_poly = sw_align_poly 
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)


pmos_1p2v_highvt_tg (d g s b x) base_pmos_1p2v_highvt_tg  l=l nf=nf ad=ad as=as pd=pd ps=ps
+ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf nbc=nbc
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp
+ delvto = sw_vth0_pmos_highvt - 0.05

model base_pmos_1p2v_highvt_tg  bsimsoi
//*** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     type = p                      
//*** Geometry Range Parameter ***
+lmax = 5.1E-6                 wmax = 5.1E-6                 
//*** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15                  
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144                
//*** Vth Related  Parameter ***
+vth0 = -0.62                  k1 = 0.5644                   k1w1 = -2E-8                  
+k1w2 = 0                      k2 = 0                        k3 = -1.84                    
+k3b = 0                       kb1 = 0                       w0 = 1E-9                     
+lpe0 = -1.29E-8               lpeb = -2E-8                  dvt0 = 0.64                   
+dvt1 = 0.21186                dvt2 = 0.391                  dvt0w = -0.24                 
+dvt1w = 1E5                   dvt2w = 0                     dvtp0 = 1E-8                  
+dvtp1 = 0                     dvtp2 = 0                     dvtp3 = 0                     
+dvtp4 = 0                     cdsbs = 1E-3                  
//*** Mobility Related Parameter ***
+u0 = 25 * (sw_u0_pmos_highvt**0.8)                      ua = 0                        ub = 0 
+uc = -7.4E-10                 vsat = 1E6                    a0 = 0.372                    
+ags = 0                       b0 = 0                        b1 = 0                        
+keta = 0                      ketas = 0                     a1 = 0                        
+a2 = 1                        rdsw = 60 *sw_rdsw_pmos_highvt                     prwb = 0  
+prwg = 0                      wr = 0.85                     
//*** Subthreshold Related Parameter ***
+voff = -0.05256               nfactor = 3.2155              eta0 = 0.074                  
+etab = -0.07                  dsub = 0.1                    cit = 0                       
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3                 
//*** dW and dL Parameter ***
+lint = -8E-9 - sw_dvar_polycd                 ll = 0                        lln = 1       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = 3E-9                   dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
//*** Output Resistance Related Parameter ***
+pclm = 0.675                  lpclm = 0                     wpclm = 0.5                   
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0                   
+drout = 0.571                 pvag = 0                      delta = 0.045                 
+alpha0 = 0                    fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0.1                    sii2 = 0                      
+siid = 0                      agidl = 1E-12                 bgidl = 9E8                   
+cgidl = 0                     egidl = 0                     agisl = 0                     
+bgisl = 1E9                   egisl = 1.2                   ntun = 10                     
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6                  
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10                  
+isbjt = 6.155E-4              idbjt = 7E-5                  isdif = 4.5E-8                
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4                  
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025                 
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7                  
+vabjt = 10                    aely = 0                      ahli = 1E-15                  
+rbody = 10                    rbsh = 100                    rhalo = 1E15                  
+minv = 0                      
//*** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1                    
+aigsd = 8.8E-3                bigsd = 7E-4                  cigsd = 0.0905                
+nigc = 1                      pigcd = 1                     dlcig = 5E-9                  
+toxqm = sw_tox_lv                ntox = 4.5                    toxref = 1.8e-9
+ebg = 1.2                     alphagb1 = 0.74               betagb1 = 0.03                
+vgb1 = 300                    vevb = 0.075                  alphagb2 = 0.43               
+betagb2 = 0.05                vgb2 = 17                     vecb = 0.026                  
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv              cgdo = 3.5E-10/swr_tox_lv 
+cgeo = 5.0e-10/swr_tox_lv     cjswg = 8.6E-11/sw_rdsw_pmos_lowvt         mjswg = 0.5                   
+vsdfb = -4                    vsdth = -2                    csdmin = 1E-4                 
+cgsl = 3E-10/swr_tox_lv       cgdl = 3E-10/swr_tox_lv           ckappa = 0.95  
+cf = 0                        clc = 1E-8                    cle = 0                       
+dlc = -3.98159E-8             
// +llc = 1.209E-16               lwc = 0                       
//+lwlc = 0                      dlbg = 0                      
+ dwc = -7.8E-8                 
+delvt = -0.028                fbody = 0                     acde = 1                      
+moin = 500                    noff = 1.23                   voffcv = -0.5                 
+minvcv = 0.3                  lminvcv = -0.054              wminvcv = 0.3                 
//*** Temperature coefficient ***
+tnom = 27                     ute = -0.6396                   ucste = -9.2E-3               
+ud1 = 0                       kt1 = -0.2755                 kt1l = 2.2E-9                 
+kt2 = -0.3                    ua1 = 0                       ub1 = 0                       
+uc1 = 0                       at = 3.4E4                    tcjswg = 0                    
+cth0 = 0                      prt = 0                       rth0 = 0.2                    
+ntrecf = 0                    ntrecr = 0                    xbjt = 1.15                   
+xdif = 1.11                   xrec = 0.9                    xtun = 0                      
+xrecd = 1                     wth0 = 4E-6                   
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 2                       k2b = 0.5                     dk2b = 0.3                    
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6                  
//*** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1                    
+ngcon = 2                     xgw = 0                       xgl = 0                       
+gbmin = 1E-12                 
//*** Unknown Parameters ***
+gatetype = non_h              dskip = yes                   


ends pmos_1p2v_highvt_hg
******************************************************************
******************************************************************

inline subckt pmos_1p2v_lowvt_hg (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 2
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)


pmos_1p2v_lowvt_hg (d g s b x) base_pmos_1p2v_lowvt_bodytie
+ swx_align_poly=0 nbc=nbc
+ l=l w=(w-2*sw_dvar_polycd) nf=nf  ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_1p2v_lowvt_hg
******************************************************************
******************************************************************

inline subckt pmos_1p2v_lowvt_sbc (d g s b x)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_sbc_as ( nf , w )
+ ad     = swf_fet_sbc_as ( nf , w )
+ pd     = swf_fet_sbc_ps ( nf , w )
+ ps     = swf_fet_sbc_ps ( nf , w )
  //    gate extra gate capacitance
parameters
+    pdbcp   = swf_psbcp_sbc (nf)
+    psbcp   = swf_psbcp_sbc (nf)
+    agbcp   = swf_agbcp_sbc (nf)
+    agbcp2  = swf_agbcp_sbc (nf)
+    aebcp   = swf_aebcp_sbc (nf)


pmos_1p2v_lowvt_sbc (d g s b x)  base_pmos_1p2v_lowvt_bodytie
+ swx_align_poly=0  nbc=0
+ l=l w=w nf=nf   ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_1p2v_lowvt_sbc
******************************************************************
******************************************************************

inline subckt pmos_1p2v_lowvt (d g s b)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.255u
+       swx_insidew_ds    = 0.28u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as = swx_total_sdarea  * 0.5
+ ad = swx_total_sdarea  * 0.5
+ pd = swx_total_sdperim * 0.5
+ ps = swx_total_sdperim * 0.5
+    aebcp   = swx_active_area - (as+ad)


pmos_1p2v_lowvt (d g s b) ps_psoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
+aebcp=aebcp

ends pmos_1p2v_lowvt
******************************************************************
******************************************************************

inline subckt pmos_1p2v_lowvt_tg (d g s e p)

parameters l=0.1u w=0.5u nf=1
  // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
parameters
+ as     = swf_fet_as (nf, w)
+ ad     = swf_fet_as (nf, w)
+ pd     = swf_fet_ps (nf, w)
+ ps     = swf_fet_ps (nf, w)
+ nbc    = 1
  //    gate extra gate capacitance
parameters
+ pdbcp  = swf_psbcp (nf, nbc)
+ psbcp  = swf_psbcp (nf, nbc)
+ agbcp  = swf_agbcp (nf, l, nbc)
+ agbcp2 = swf_agbcp (nf, l, nbc)
+ aebcp  = swf_aebcp (nf, l, nbc)
     // Refitting adjustment then target adjustments
+ swx_vth0  = -0.103
+ swx_lvth0 = 1.05
+ swx_wvth0 = -0.55
+ swx_u0    = 0.85                  
+ swx_lu0   = -3
+ swx_vsat  = 0.8
+ swx_lvsat = 500
+ swx_wvsat = 2000
+ swx_cg_tg = 0.9


pmos_1p2v_lowvt_tg (d g s e p) base_pmos_1p2v_lowvt_tg
+ l=l  nf=nf   ad=ad as=as pd=pd ps=ps nbc=nbc
+ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp
+ delvto = sw_vth0_pmos_lowvt 

model base_pmos_1p2v_lowvt_tg bsimsoi
//*** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     type = p                      
//*** Geometry Range Parameter ***
+lmax = 4E-7                   wmax = 5.1E-6                 
//*** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv               
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15                  
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144                
//*** Vth Related  Parameter ***
+vth0 = -0.245+swx_vth0        lvth0 = -0.014*swx_lvth0      wvth0 = 0.015*swx_wvth0           
+k1 = 0.01                     k1w1 = 0                      k1w2 = 0                      
+k2 = -0.12                    k3 = -5.42                    k3b = 0                       
+kb1 = 0                       w0 = 0                        lpe0 = -1E-8                  
+lpeb = 0                      dvt0 = 1.145                  dvt1 = 0.21684                
+dvt2 = 0                      dvt0w = 0.056                 dvt1w = 1.5E5                 
+dvt2w = 0                     dvtp0 = 0                     dvtp1 = 0                     
+dvtp2 = 0                     dvtp3 = 0                     dvtp4 = 0                     
+cdsbs = 1E-3                  
//*** Mobility Related Parameter ***
+u0 = 89.7*sw_u0_pmos_lowvt*swx_u0 
+lu0 = -1.4*swx_lu0        
+wu0 = -4                      
+pu0 = 0                       ua = 0                        ub = 0                        
+uc = 0                        
+vsat = 7.2E4*swx_vsat         
+lvsat = swx_lvsat
+wvsat = swx_wvsat
+a0 = 0.372                    
+ags = 0                       b0 = 0                        b1 = 0                        
+keta = 0                      ketas = 0                     a1 = 0                        
+a2 = 0.99                     rdsw = 300*sw_rdsw_pmos_lowvt  prwb = 0                      
+prwg = 0                      wr = 0.85                     
//*** Subthreshold Related Parameter ***
+voff = -0.042048              nfactor = 0.2304              eta0 = 0.0276                 
+etab = -1E-3                  dsub = 0.1                    cit = 0                       
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3                 
//*** dW and dL Parameter ***
+lint = -2.743E-8              ll = 0                        lln = 1                       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = -5.08E-9               dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
//*** Output Resistance Related Parameter ***
+pclm = 1.35                   lpclm = 0                     wpclm = 0.5                   
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0                   
+drout = 0.571                 pvag = 0                      delta = 0.045                 
+alpha0 = 0                    fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0.1                    sii2 = 0                      
+siid = 0                      agidl = 2E-12                 bgidl = 1E9                   
+cgidl = 0                     egidl = 0                     agisl = 0                     
+bgisl = 1E9                   egisl = 1.2                   ntun = 10                     
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6                  
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10                  
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8                
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4                  
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025                 
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7                  
+vabjt = 10                    aely = 0                      ahli = 1E-15                  
+rbody = 10                    rbsh = 100                    rhalo = 1E15                  
+minv = 1.5                    
//*** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1                    
+aigsd = 1.8E-3                bigsd = 0                     cigsd = 0.0905                
+nigc = 1                      pigcd = 1                     dlcig = 5E-9                  
+toxqm = 10e-9*swr_tox_lv      ntox = 4.5                    toxref = 1.8E-9               
+ebg = 1.2                     alphagb1 = 0.74               betagb1 = 0.03                
+vgb1 = 300                    vevb = 0.075                  alphagb2 = 0.43               
+betagb2 = 0.05                vgb2 = 17                     vecb = 0.026                  
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 2.67976E-10/swr_tox_lv*swx_cg_tg cgdo = 2.67976E-10/swr_tox_lv*swx_cg_tg 
+cgeo = 2.3e-10/swr_tox_lv*swx_cg_tg cjswg = 1.112401E-10/sw_rdsw_pmos_lowvt mjswg = 0.3 
+vsdfb = -4                    vsdth = -2                    csdmin = 1E-4             
+cgsl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg 
+cgdl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg ckappa = 0.1 
+cf = 0                        clc = 1E-8                    cle = 0                       
+dlc = -2.654244E-8            llc = 0                       lwc = 0                       
+lwlc = 0                      dlbg = 0                      dwc = 2.814178E-8             
+wlc = 0                       wwc = 0                       wwlc = 0                      
+delvt = -6.54447E-2           ldelvt = 0.03                 fbody = 0                     
+acde = 1                      moin = 500                    cfrcoeff = 1                  
+noff = 1                      voffcv = -0.5                 minvcv = 0.51                 
+wminvcv = 4.96175             
//*** Temperature coefficient ***
+tnom = 22                     ute = -1.095                  kt1 = -2.41893E-2             
+kt1l = -1.345103E-8           kt2 = -0.15                   ua1 = 0                       
+ub1 = 0                       uc1 = 0                       at = 3.4E4                    
+tcjswg = 0                    cth0 = 1E-6                   prt = 0                       
+rth0 = 0.2                    ntrecf = 0                    ntrecr = 0                    
+xbjt = 1.15                   xdif = 1.11                   xrec = 0.9                    
+xtun = 0                      wth0 = 4E-6                   
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 2                       k2b = 0.5                     dk2b = 0.3                    
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6                  
//*** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1                    
+ngcon = 2                     xgw = 0                       xgl = 0                       
+gbmin = 1E-12                 
ends pmos_1p2v_lowvt_tg
******************************************************************
******************************************************************
// -----------------------------------------------------------

inline subckt pmos_1p8v_sbc (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sarea   = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_darea   = (w+0.3u) * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sperim  = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_total_dperim  = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical, instance parameters:
parameters
+    as      = swx_total_sarea  * 0.5
+    ad      = swx_total_darea  * 0.5
+    pd      = swx_total_dperim * 0.5
+    ps      = swx_total_sperim * 0.5
  //    H-gate extra gate capacitance
parameters
+    pdbcp   = 0.15e-6 * nf
+    psbcp   = 0
+    agbcp   = 0.15e-6 * 0.075e-6 * nf
+    agbcp2  = 0.15e-6 * 0.075e-6 * nf
+    aebcp   = 4*0.15e-6*0.225e-6
// +    aebcp   = swx_active_area - (as+ad)


pmos_1p8v_sbc  (d g s e p) pmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_1p8v_sbc

// -----------------------------------------------------------

inline subckt pmos_1p8v_tg (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = 0.5*(swx_total_sdperim-2*w)
+ psbcp  = 0.5*(swx_total_sdperim-2*w)
+ agbcp  = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
//+ aebcp  = swx_active_area - (as+ad)


pmos_1p8v_tg  (d g s e p) pmos_1p8v_base l=l 
+ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly  
+ nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_1p8v_tg

// -----------------------------------------------------------

inline subckt pmos_1p8v_hg (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
+ pdbcp  = swx_total_sdperim-2*w
+ psbcp  = swx_total_sdperim-2*w
+ agbcp  = (swx_total_sdperim-2*w ) * 0.075e-6
+ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
//+ aebcp  = swx_active_area - (as+ad)


pmos_1p8v_hg  (d g s e p) pmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_1p8v_hg


// ===========================================================================

inline subckt pmos_1p8v_base (d g s e p)

parameters l w nf  as ad ps pd   pdbcp psbcp agbcp agbcp2 aebcp

pmos_1p8v_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp

model pmosthick  bsimsoi 
//*** Flag Parameter ***
+version = 4.5                 soimod = 0                    shmod = 1
+binunit = 1                   paramchk = 0                  mobmod = 1
+capmod = 3                    rdsmod = 1                    igcmod = 1
+igbmod = 1                    rgatemod = 1                  rbodymod = 1
+fnoimod = 1                   tnoimod = 0                   mtrlmod = 0
+vgstcvmod = 1                 gidlmod = 0                   iiimod = 0
+fdmod = 0                     minr = 1E-60                  type = p
//*** Geometry Range Parameter ***
+lmin = 0.15u                  lmax = 0.4u                      wmin = 0.4u
+wmax = 1
//*** Process Parameter ***
+tsi = 3.06E-8                 tbox = 1.4E-7                 tox = sw_tox_hv
+dtoxcv = -3.111883E-9         xj = 3E-8                     nch = 8E17
+nsub = 5E14                   ngate = 3.8E19                nsd = 2E20
+ados = 1.332                  bdos = 0.86892
//*** Vth Related  Parameter ***
+vth0 = -0.466054 + sw_vth0_pthick              k1 = 0.388186                 k1w1 = 0
+k1w2 = 0                      k2 = -5.88086E-2              k3 = 0
+k3b = 0                       kb1 = 1                       w0 = 2.5E-6
+lpe0 = 2.08067E-7             lpeb = 0                      dvt0 = 2.2
+dvt1 = 0.53                   dvt2 = -0.032                 dvt0w = 0
+dvt1w = 5.3E6                 dvt2w = -0.032                vfb = -1
+dvtp0 = 0                     dvtp1 = 0                     dvtp2 = 0
+dvtp3 = 0                     dvtp4 = 0                     vsce = 0
+cdsbs = 0
//*** Mobility Related Parameter ***
+u0 = 4.7311E-3 * sw_u0_pthick                ua = 0                        ub = 1.276725E-19
+uc = -2.325E-11               ud = 0                        eu = 1
+ucs = 1                       vsat = 1.48766E4              lvsat = 1.673617E3
+a0 = 0.105474                 la0 = 7.09237E-2              ags = 3.0958
+lags = 0.999946               b0 = 0                        b1 = 5.634546E-8
+keta = -0.6                   ketas = 0                     a1 = 0
+a2 = 1                        rdsw = 420.5 * sw_rdsw_pthick                 rdw = 50
+rdwmin = 0                    rsw = 50                      rswmin = 0
+prwb = 0                      prwg = -3E-5                  wr = 1
//*** Subthreshold Related Parameter ***
+voff = 0                      nfactor = 0.375               eta0 = 0.169852
+leta0 = 2.21911E-2            etab = -0.07                  eta0cv = 0.08
+etabcv = -0.07                dsub = 0.825467               ldsub = 0
+cit = 9.782955E-4             cdsc = 2.4E-4                 cdscb = 0
+cdscd = 0
//*** dW and dL Parameter ***
+lint = 0 - sw_dvar_polycd     ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -2.85E-8               dwg = 0                       dwb = 0
+wl = 0                        wln = 1                       ww = 0
+wwn = 1                       wwl = 0                       xw = 0
+xl = 0
//*** Output Resistance Related Parameter ***
+pclm = 2.501523               pdiblc1 = 3.84369E-2          pdiblc2 = 1.000168E-5
+pdiblcb = 0                   drout = 4.316444              ldrout = 0
+pvag = 4.83206E-2             delta = 0.025                 alpha0 = 0
+fbjtii = 0                    beta0 = 0                     beta1 = 0
+beta2 = 0.1                   vdsatii0 = 0.9                tii = 0
+lii = 0                       esatii = 1E7                  sii0 = 0.5
+sii1 = 0.1                    sii2 = 0                      siid = 0
+agidl = 0                     bgidl = 2.3E9                 cgidl = 0.5
+egidl = 1.2                   rgidl = 1                     kgidl = 0
+fgidl = 0                     agisl = 0                     bgisl = 2.3E9
+cgisl = 0                     egisl = 1.2                   rgisl = 1
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 1E-15
+rbody = 1E3                   rbsh = 100                    rhalo = 1E15
+minv = 1.02
//*** Gate-to-body tunneling parameters ***
+aigc = 0.31                   bigc = 0.024                  cigc = 0.03
+aigsd = 0.31                  bigsd = 0.024                 cigsd = 0.03
+nigc = 1                      pigcd = 1                     poxedge = 1
+dlcig = 0                     toxqm = 1E-8                  ntox = 1
+toxref = 2.5E-9               ebg = 1.2                     alphagb1 = 0.35
+betagb1 = 0.03                vgb1 = 300                    vevb = 0.075
+alphagb2 = 0.43               betagb2 = 0.05                vgb2 = 17
+vecb = 0.026                  voxh = 5                      deltavox = 5E-3
+aigbcp2 = 0.043               bigbcp2 = 5.4E-3              cigbcp2 = 7.5E-3
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 2.659147E-10/swr_tox_hv   cgdo = 2.659147E-10/swr_tox_hv
+cgeo = 3E-10/swr_tox_hv       cjswg = 1E-10                 mjswg = 0.5
+cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick)           cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick)  ckappa = 0.24
+cf = 0                        clc = 1E-8                    cle = 0
+dlc = -1.469717E-8            llc = 0                       dlbg = 0
+dwc = 0                       delvt = 0                     fbody = 0.39
+acde = 0.5                    voffcv = -0.5
//*** Temperature coefficient ***
+tnom = 27                     ute = -1.283217               ucste = -4.775E-3
+ud1 = 0                       kt1 = -7.39318E-2             kt1l = -4.44052E-8
+kt2 = 0                       ua1 = 3.000582E-9             ub1 = -3.824957E-18
+uc1 = -5.6E-11                at = 2.93335E4                tcjswg = 0
+tpbswg = 0                    tcjswgd = 0                   tpbswgd = 0
+cth0 = 1E-5                   prt = 0                       rth0 = 0
+ntrecf = 0                    ntrecr = 0                    xbjt = 0.7
+xdif = 1                      xrec = 1                      xtun = 0
+xdifd = 1                     xrecd = 1                     xtund = 0
+wth0 = 0                      tvbci = 0                     tbgasub = 7.02E-4
+tbgbsub = 1.108E3
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0
+k1b = 1                       k2b = 0                       dk2b = 0
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3
+vbs0pd = 0                    vbs0fd = 0.5
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1
+ngcon = 1                     xgw = 0                       xgl = 0
+rbsb = 50                     rbdb = 50                     gbmin = 1E-12
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5
+rnoia = 0.577                 rnoib = 0.37
//*** Stress Effect Related Parameter ***
+saref = 1E-6                  sbref = 1E-6                  wlod = 0
+ku0 = 0                       kvsat = 0                     kvth0 = 0
+tku0 = 0                      llodku0 = 0                   wlodku0 = 0
+llodvth = 0                   wlodvth = 0                   stk2 = 0
+lodk2 = 1                     steta0 = 0                    lodeta0 = 1
+steta0cv = 0                  lodeta0cv = 1
//***Material Properties***
+eggbcp2 = 1.12                eggdep = 1.12                 agb1 = 3.7622E-7
+bgb1 = -3.1051E10             agb2 = 4.9758E-7              bgb2 = -2.357E10
+agbc2n = 3.4254E-7            agbc2p = 4.9723E-7            bgbc2n = 1.1665E12
+bgbc2p = 7.4567E11            vtm00 = 0.026


ends pmos_1p8v_base
******************************************************************
******************************************************************
// -----------------------------------------------------------

inline subckt pmos_3p3v_sbc (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sarea   = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_darea   = (w+0.3u) * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sperim  = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_total_dperim  = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical, instance parameters:
parameters
+    as      = swx_total_sarea  * 0.5
+    ad      = swx_total_darea  * 0.5
+    pd      = swx_total_dperim * 0.5
+    ps      = swx_total_sperim * 0.5
  //    H-gate extra gate capacitance
parameters
+    pdbcp   = 0.15e-6 * nf
+    psbcp   = 0
+    agbcp   = 0.15e-6 * 0.075e-6 * nf
+    agbcp2  = 0.15e-6 * 0.075e-6 * nf
+    aebcp   = 4*0.15e-6*0.225e-6
// +    aebcp   = swx_active_area - (as+ad)


pmos_3p3v_sbc  (d g s e p) pthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_3p3v_sbc

// -----------------------------------------------------------

inline subckt pmos_3p3v_tg (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = 0.5*(swx_total_sdperim-2*w)
+ psbcp  = 0.5*(swx_total_sdperim-2*w)
+ agbcp  = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
//+ aebcp  = swx_active_area - (as+ad)


pmos_3p3v_tg  (d g s e p) pthick_base l=l 
+ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly  
+ nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_3p3v_tg

// -----------------------------------------------------------

inline subckt pmos_3p3v_hg (d g s e p)

parameters l=0.5u w=1u nf=1
  // Internal parameters
parameters
+       swx_outsidew_ds   = 0.23u
+       swx_insidew_ds    = 0.25u
+       swx_total_sdarea  = w * ( 2*swx_outsidew_ds +   (nf-1)*swx_insidew_ds )
+       swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+       swx_active_area   = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
   // Taking average since S/D are symmetrical
parameters
+ as     = swx_total_sdarea  * 0.5
+ ad     = swx_total_sdarea  * 0.5
+ pd     = swx_total_sdperim * 0.5
+ ps     = swx_total_sdperim * 0.5
  //    H-gate extra gate capacitance
parameters
+ pdbcp  = swx_total_sdperim-2*w
+ psbcp  = swx_total_sdperim-2*w
+ agbcp  = (swx_total_sdperim-2*w ) * 0.075e-6
+ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
+ aebcp  = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
//+ aebcp  = swx_active_area - (as+ad)


pmos_3p3v_hg  (d g s e p) pthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps 
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp


ends pmos_3p3v_hg


// ===========================================================================

inline subckt pthick_base (d g s e p)

parameters l w nf  as ad ps pd   pdbcp psbcp agbcp agbcp2 aebcp

pthick_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
+ pdbcp=pdbcp  psbcp=psbcp  agbcp=agbcp  agbcp2=agbcp2  aebcp=aebcp

model pmosthick  bsimsoi 
//*** Flag Parameter ***
+version = 4.5                 soimod = 0                    shmod = 1
+binunit = 1                   paramchk = 0                  mobmod = 1
+capmod = 3                    rdsmod = 1                    igcmod = 1
+igbmod = 1                    rgatemod = 1                  rbodymod = 1
+fnoimod = 1                   tnoimod = 0                   mtrlmod = 0
+vgstcvmod = 1                 gidlmod = 0                   iiimod = 0
+fdmod = 0                     minr = 1E-60                  type = p
//*** Geometry Range Parameter ***
+lmin = 0                      lmax = 1                      wmin = 0
+wmax = 1
//*** Process Parameter ***
+tsi = 3.06E-8                 tbox = 1.4E-7                 tox = sw_tox_hv
+dtoxcv = -3.111883E-9         xj = 3E-8                     nch = 8E17
+nsub = 5E14                   ngate = 3.8E19                nsd = 2E20
+ados = 1.332                  bdos = 0.86892
//*** Vth Related  Parameter ***
+vth0 = -0.512 + sw_vth0_pthick         k1 = 0.23116                  k1w1 = 0
+k1w2 = 0                      k2 = -0.04185                 k3 = 0
+k3b = 0                       kb1 = 1                       w0 = 2.5E-6
+lpe0 = 4.161339E-7            lpeb = 0                      dvt0 = 2.2
+dvt1 = 0.53                   dvt2 = -0.032                 dvt0w = 0
+dvt1w = 5.3E6                 dvt2w = -0.032                vfb = -1
+dvtp0 = 0                     dvtp1 = 0                     dvtp2 = 0
+dvtp3 = 0                     dvtp4 = 0                     vsce = 0
+cdsbs = 0
//*** Mobility Related Parameter ***
+u0 = 5.37625E-3 * sw_u0_pthick               ua = 0                        ub = 2.55345E-19
+uc = -2.325E-11               ud = 0                        eu = 1
+ucs = 1                       vsat = 4.648939E4             lvsat = 0.145994
+a0 = 0.105474                 la0 = 7.09237E-2              ags = 3.0958
+lags = 0.999946               b0 = 0                        b1 = 5.634546E-8
+keta = -0.6                   ketas = 0                     a1 = 0
+a2 = 1                        rdsw = 420.5 * sw_rdsw_pthick                 rdw = 50
+rdwmin = 0                    rsw = 50                      rswmin = 0
+prwb = 0                      prwg = -3E-5                  wr = 1
//*** Subthreshold Related Parameter ***
+voff = 0                      nfactor = 0.5                 eta0 = 0.159802
+leta0 = 0.994516              etab = -0.07                  eta0cv = 0.08
+etabcv = -0.07                dsub = 0.825467               ldsub = 2.03115E-2
+cit = 1.956591E-3             cdsc = 2.4E-4                 cdscb = 0
+cdscd = 0
//*** dW and dL Parameter ***
+lint = 0 - sw_dvar_polycd     ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -2.85E-8               dwg = 0                       dwb = 0
+wl = 0                        wln = 1                       ww = 0
+wwn = 1                       wwl = 0                       xw = 0
+xl = 0
//*** Output Resistance Related Parameter ***
+pclm = 1.667682               pdiblc1 = 3.84369E-2          pdiblc2 = 1.000168E-5
+pdiblcb = 0                   drout = 4.316444              ldrout = 0
+pvag = 9.66412E-2             delta = 0.05                  alpha0 = 0
+fbjtii = 0                    beta0 = 0                     beta1 = 0
+beta2 = 0.1                   vdsatii0 = 0.9                tii = 0
+lii = 0                       esatii = 1E7                  sii0 = 0.5
+sii1 = 0.1                    sii2 = 0                      siid = 0
+agidl = 0                     bgidl = 2.3E9                 cgidl = 0.5
+egidl = 1.2                   rgidl = 1                     kgidl = 0
+fgidl = 0                     agisl = 0                     bgisl = 2.3E9
+cgisl = 0                     egisl = 1.2                   rgisl = 1
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 1E-15
+rbody = 1E3                   rbsh = 100                    rhalo = 1E15
//*** Gate-to-body tunneling parameters ***
+aigc = 0.31                   bigc = 0.024                  cigc = 0.03
+aigsd = 0.31                  bigsd = 0.024                 cigsd = 0.03
+nigc = 1                      pigcd = 1                     poxedge = 1
+dlcig = 0                     toxqm = 1E-8                  ntox = 1
+toxref = 2.5E-9               ebg = 1.2                     alphagb1 = 0.35
+betagb1 = 0.03                vgb1 = 300                    vevb = 0.075
+alphagb2 = 0.43               betagb2 = 0.05                vgb2 = 17
+vecb = 0.026                  voxh = 5                      deltavox = 5E-3
+aigbcp2 = 0.043               bigbcp2 = 5.4E-3              cigbcp2 = 7.5E-3
//*** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 2.659147E-10/swr_tox_hv   cgdo = 2.659147E-10/swr_tox_hv
+cgeo = 3E-10/swr_tox_hv       cjswg = 1E-10                 mjswg = 0.5
+cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick)           cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick)  ckappa = 0.24
+cf = 0                        clc = 1E-8                    cle = 0
+dlc = -1.469717E-8            llc = 0                       dlbg = 0
+dwc = 0                       delvt = 0                     fbody = 0.39
+acde = 0.5                    voffcv = -0.5
//*** Temperature coefficient ***
+tnom = 27                     ute = -1.347492               ucste = -4.775E-3
+ud1 = 0                       kt1 = -0.165                  kt1l = -6.158157E-8
+kt2 = 0.022                   ua1 = 3.000582E-9             ub1 = -3.824957E-18
+uc1 = -5.6E-11                at = 5.95E4                   tcjswg = 0
+tpbswg = 0                    tcjswgd = 0                   tpbswgd = 0
+cth0 = 1E-5                   prt = 0                       rth0 = 0
+ntrecf = 0                    ntrecr = 0                    xbjt = 0.7
+xdif = 1                      xrec = 1                      xtun = 0
+xdifd = 1                     xrecd = 1                     xtund = 0
+wth0 = 0                      tvbci = 0                     tbgasub = 7.02E-4
+tbgbsub = 1.108E3
//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0
+k1b = 1                       k2b = 0                       dk2b = 0
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3
+vbs0pd = 0                    vbs0fd = 0.5
//*** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1
+ngcon = 1                     xgw = 0                       xgl = 0
+rbsb = 50                     rbdb = 50                     gbmin = 1E-12
//*** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5
+rnoia = 0.577                 rnoib = 0.37
//*** Stress Effect Related Parameter ***
+saref = 1E-6                  sbref = 1E-6                  wlod = 0
+ku0 = 0                       kvsat = 0                     kvth0 = 0
+tku0 = 0                      llodku0 = 0                   wlodku0 = 0
+llodvth = 0                   wlodvth = 0                   stk2 = 0
+lodk2 = 1                     steta0 = 0                    lodeta0 = 1
+steta0cv = 0                  lodeta0cv = 1
//***Material Properties***
+eggbcp2 = 1.12                eggdep = 1.12                 agb1 = 3.7622E-7
+bgb1 = -3.1051E10             agb2 = 4.9758E-7              bgb2 = -2.357E10
+agbc2n = 3.4254E-7            agbc2p = 4.9723E-7            bgbc2n = 1.1665E12
+bgbc2p = 7.4567E11            vtm00 = 0.026


ends pthick_base
******************************************************************
******************************************************************

model ps_nsoi1_lls bsimsoi type=n
+ wmax = 5.1u  	lmax = 0.6u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = 1E15                   
+ngate = 1E20                  ados = 3.034                  bdos = 0.6                    
***** Vth Related  Parameter ***
+vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.085    k1 = 0.2                      k1w1 = 0   
+k1w2 = 0                      k2 = -0.15                    k3 = 0                        
+k3b = 0                       kb1 = 1.5                     w0 = 2.5E-6                   
+lpe0 = 1.7E-7                 dvt0 = 2.2                    dvt1 = 0.53                   
+dvt2 = -0.032                 dvt0w = 0                     dvt1w = 0                     
+dvt2w = 0                     nlx = 1.74E-7                 
***** Mobility Related Parameter ***
+u0 = 150*sw_u0_nmos_lowvt          ua = 0                        ub = 0                        
+uc = 0                        vsat = 4.4E4            a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0                        
+keta = 0                      ketas = 0                     a1 = 0                        
+a2 = 0.99                     rdsw = 60*sw_rdsw_nmos_lowvt      prwb = 0  
+prwg = 0                      wr = 0.85                     
***** Subthreshold Related Parameter ***
+voff = -0.02628               nfactor = 0.6            eta0 = 0.0736
+etab = 0                      dsub = 0.05                   cit = 0                       
+cdsc = 9E-3                   cdscb = 0                     cdscd = -2E-3                 
***** dW and dL Parameter ***
+lint = 1E-8 - sw_dvar_polycd        ll = 0                        lln = 1                       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = -2.85E-8               dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
***** Output Resistance Related Parameter ***
+pclm = 0                      lpclm = 0                     wpclm = 0.25                  
+pdiblc1 = 0                   pdiblc2 = 0                   pdiblcb = 0                   
+drout = 7.8E-3                pvag = 0                      delta = 7.5E-3                
+alpha0 = 1E-8                 fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0                      sii2 = 0                      
+siid = 0                      agidl = 0                     bgidl = 1E8                   
+cgidl = 0                     egidl = 0.72                  ntun = 10                     
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6                  
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10                  
+isbjt = 1E-5                  idbjt = 1E-5                  isdif = 5.13E-8               
+iddif = 4.5E-8                isrec = 1E-4                  idrec = 1E-4                  
+istun = 1E-5                  ln = 1E-11                    vrec0 = 0.075                 
+vtun0 = 0                     nbjt = 1.215                  lbjt0 = 2E-7                  
+vabjt = 9.7                   aely = 0                      ahli = 1E-15                  
+rbody = 10                    rbsh = 100                    rhalo = 1E15                  
+minv = 1.7                    lminv = -0.017                wminv = 0.118                 
***** Gate-to-body tunneling parameters ***
+aigc = 0.01596                bigc = 0                      cigc = 0.0273                 
+aigsd = 0.018128              bigsd = 4.05E-3               cigsd = 9.00909E-2            
+nigc = 4                      pigcd = 0.5                   dlcig = 1E-9                  
+ntox = 1.024                  toxref = 1.8E-9               ebg = 1.15                    
+alphagb1 = 0.35               betagb1 = 1E-4                vgb1 = 200                    
+vevb = 0.3                    alphagb2 = 0.6136             betagb2 = 0.06                
+vgb2 = 200                    vecb = 3                      
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 1E-10                  cjswg = 1E-10/sw_rdsw_nmos_lowvt   mjswg = 0.6                   
+cgsl = 4.5E-11                cgdl = 4.5E-11                ckappa = 0.6                  
+cf = 0                        clc = 5E-7                    cle = 0.6                     
+dlc = 3.35E-8                 llc = 0                       dlbg = 0                      
+dwc = 0                       delvt = 0                     fbody = 0                     
+voffcv = -0.2                 
***** Temperature coefficient ***
+tnom = 22                     ute = -1.5                    kt1 = -0.165                  
+kt1l = 0                      kt2 = 0.022                   ua1 = 0                       
+ub1 = 0                       uc1 = -5.6E-11                at = 100                      
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6                   
+prt = 0                       rth0 = 0.2                    ntrecf = 0                    
+ntrecr = 0                    xbjt = -0.05                  xdif = 1                      
+xrec = 1                      xtun = 0                      wth0 = 0                      
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
***** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
***** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37                  
***** Unknown Parameters ***
+gatetype = non_h              dskip = yes
+minvcv = 0
+vsdfb = -5.0
+vsdth = -3.0
+csdmin = 1.0e-4

******************************************************************
******************************************************************


model ps_nsoi2_lls bsimsoi type=n
+ wmax = 5.1u     lmax = 0.6u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = 1E15                   
+ngate = 1E20                  ados = 3.034                  bdos = 0.6                    
***** Vth Related  Parameter ***
+vth0 = 0.46 + sw_vth0_nmos_highvt         k1 = 0.2                      k1w1 = 0
+k1w2 = 0                      k2 = -0.15                    k3 = 0
+k3b = 0                       kb1 = 1.5                     w0 = 2.5E-6
+lpe0 = 1.7E-7                 dvt0 = 2.2                    dvt1 = 0.53
+dvt2 = -0.032                 dvt0w = 0                     dvt1w = 0
+dvt2w = 0                     nlx = 1.74E-7
***** Mobility Related Parameter ***
+u0 = 100*sw_u0_nmos_highvt                      ua = 0                        ub = 0
+uc = 0                        vsat = 4.4E4                  a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0
+keta = 0                      ketas = 0                     a1 = 0
+a2 = 0.99                     rdsw = 60*sw_rdsw_nmos_highvt                     prwb = 0
+prwg = 0                      wr = 0.85
***** Subthreshold Related Parameter ***
+voff = -0.02628               nfactor = 0.6                 eta0 = 0.0736 * 0.85
+etab = 0                      dsub = 0.05                   cit = 0
+cdsc = 9E-3                   cdscb = 0                     cdscd = -2E-3
***** dW and dL Parameter ***
+lint = 1.6E-8 - sw_dvar_polycd        ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = -2.85E-8               dwg = 0                       dwb = 0
+wl = 2E-15                    wln = 1                       ww = 0
+wwn = 1                       wwl = 0
***** Output Resistance Related Parameter ***
+pclm = 0                      lpclm = 0                     wpclm = 0.25
+pdiblc1 = 0                   pdiblc2 = 0                   pdiblcb = 0
+drout = 7.8E-3                pvag = 0                      delta = 7.5E-3
+alpha0 = 1E-8                 fbjtii = 0                    beta0 = 0
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14
+tii = -0.226                  lii = 0                       esatii = 1E8
+sii0 = 1                      sii1 = 0                      sii2 = 0
+siid = 0                      agidl = 0                     bgidl = 1E8
+cgidl = 0                     egidl = 0.72                  ntun = 10
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-5                  idbjt = 1E-5                  isdif = 5.13E-8
+iddif = 4.5E-8                isrec = 1E-4                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-11                    vrec0 = 0.075
+vtun0 = 0                     nbjt = 1.215                  lbjt0 = 2E-7
+vabjt = 9.7                   aely = 0                      ahli = 1E-15
+rbody = 10                    rbsh = 100                    rhalo = 1E15
+minv = 1.7                    lminv = -0.017                wminv = 0.118
***** Gate-to-body tunneling parameters ***
+aigc = 0.01596                bigc = 0                      cigc = 0.0273                 
+aigsd = 0.018128              bigsd = 4.05E-3               cigsd = 9.00909E-2            
+nigc = 4                      pigcd = 0.5                   dlcig = 1E-9                  
+ntox = 1.024                  toxref = 1.8E-9               ebg = 1.15                    
+alphagb1 = 0.35               betagb1 = 1E-4                vgb1 = 200                    
+vevb = 0.3                    alphagb2 = 0.6136             betagb2 = 0.06                
+vgb2 = 200                    vecb = 3                      
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 1E-10                  cjswg = 1E-10/sw_rdsw_nmos_highvt   mjswg = 0.6                   
+cgsl = 4.5E-11                cgdl = 4.5E-11                ckappa = 0.6                  
+cf = 0                        clc = 5E-7                    cle = 0.6                     
+dlc = 3.35E-8                 llc = 0                       dlbg = 0                      
+dwc = 0                       delvt = 0                     fbody = 0                     
+voffcv = -0.2                 
***** Temperature coefficient ***
+tnom = 22                     ute = -1.5                    kt1 = -0.165
+kt1l = 0                      kt2 = 0.022                   ua1 = 0
+ub1 = 0                       uc1 = -5.6E-11                at = 100
+tcjswg = 0                    tpbswg = 0                    cth0 = 1E-6
+prt = 0                       rth0 = 0.2                    ntrecf = 0
+ntrecr = 0                    xbjt = -0.05                  xdif = 1
+xrec = 1                      xtun = 0                      wth0 = 0
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 1                       k2b = 0                       dk2b = 0                      
+dvbd0 = 0                     dvbd1 = 0                     moinfd = 1E3                  
+vbs0pd = 0                    vbs0fd = 0.5                  
***** RF Model Parameters ***
+rshg = 0.1                    xrcrg1 = 12                   xrcrg2 = 1                    
+ngcon = 1                     xgw = 0                       xgl = 0                       
***** Noise Model ***
+ntnoi = 1                     tnoia = 1.5                   tnoib = 3.5                   
+rnoia = 0.577                 rnoib = 0.37                  
***** Unknown Parameters ***
+gatetype = non_h              dskip = yes
+minvcv = 0
+vsdfb = -5.0
+vsdth = -3.0
+csdmin = 1.0e-4

******************************************************************
******************************************************************

model ps_psoi1_lls bsimsoi type=p
+ wmax = 5.1u     lmax = 0.6u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1                    
+shmod = 1                     binunit = 1                   mobmod = 1                    
+capmod = 3                    igcmod = 1                    igbmod = 1                    
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0                   
+fdmod = 0                     
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15                  
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144                
***** Vth Related  Parameter ***
+vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.080       k1 = 0.01                     k1w1 = 0 
+k1w2 = 0                      k2 = 0                        k3 = -4                       
+k3b = 0                       kb1 = 0                       w0 = 0                        
+lpe0 = -1E-8                  lpeb = 0                      dvt0 = 1.09                   
+dvt1 = 0.214                  dvt2 = 0                      dvt0w = 0                     
+dvt1w = 1E5                   dvt2w = 0                     dvtp0 = 0                     
+dvtp1 = 0                     dvtp2 = 0                     dvtp3 = 0                     
+dvtp4 = 0                     cdsbs = 1E-3                  
***** Mobility Related Parameter ***
+u0 = 44*sw_u0_pmos_lowvt*1.3           ua = 0                        ub = 0 
+uc = 0                        vsat = 1E6     * 2               a0 = 0.372                    
+ags = 0                       b0 = 0                        b1 = 0                        
+keta = 0                      ketas = 0                     a1 = 0                        
+a2 = 0.99                     rdsw = 60*sw_rdsw_pmos_lowvt                     prwb = 0                      
+prwg = 0                      wr = 0.85                     
***** Subthreshold Related Parameter ***
+voff = -0.05256               nfactor = 2.21                eta0 = 0.08                   
+etab = -1E-3                  dsub = 0.1                    cit = 0                       
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3                 
***** dW and dL Parameter ***
+lint = -2.7E-8 - sw_dvar_polycd         ll = 0                        lln = 1                       
+lw = 0                        lwn = 1                       lwl = 0                       
+wint = 1E-9                   dwg = 0                       dwb = 0                       
+wl = 2E-15                    wln = 1                       ww = 0                        
+wwn = 1                       wwl = 0                       
***** Output Resistance Related Parameter ***
+pclm = 0.675 * 3                 lpclm = 0                     wpclm = 0.5                   
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0                   
+drout = 0.571                 pvag = 0                      delta = 0.045                 
+alpha0 = 0                    fbjtii = 0                    beta0 = 0                     
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14               
+tii = -0.226                  lii = 0                       esatii = 1E8                  
+sii0 = 1                      sii1 = 0.1                    sii2 = 0                      
+siid = 0                      agidl = 0                     bgidl = 1E9                   
+cgidl = 0                     egidl = 0                     agisl = 0                     
+bgisl = 1E9                   egisl = 1.2                   ntun = 10                     
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6                  
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10                  
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8                
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4                  
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025                 
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7                  
+vabjt = 10                    aely = 0                      ahli = 1E-15                  
+rbody = 10                    rbsh = 100                    rhalo = 1E15                  
***** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1                    
+aigsd = 9E-3                  bigsd = 0                     cigsd = 0.0905                
+nigc = 1                      pigcd = 1                     dlcig = 5E-9                  
+ntox = 4.5                    toxref = 1.8E-9               ebg = 1.2                     
+alphagb1 = 0.74               betagb1 = 0.03                vgb1 = 300                    
+vevb = 0.075                  alphagb2 = 0.43               betagb2 = 0.05                
+vgb2 = 17                     vecb = 0.026                  
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 0                      cjswg = 1E-10/sw_rdsw_pmos_lowvt   mjswg = 0.5                   
+cgsl = 8.82E-11               cgdl = 6E-11                  ckappa = 0.1                  
+cf = 0                        clc = 1E-8                    cle = 0                       
+dlc = 3.074E-8                llc = 1.3E-16                 dlbg = 0                      
+dwc = 0                       delvt = 0                     fbody = 0                     
+acde = 1                      moin = 500                    voffcv = -0.5                 
***** Temperature coefficient ***
+tnom = 22                     ute = -0.73                   kt1 = -0.042                  
+kt1l = -1.1E-8                kt2 = -0.3                    ua1 = 0                       
+ub1 = 0                       uc1 = 0                       at = 3.4E4                    
+tcjswg = 0                    cth0 = 1E-6                   prt = 0                       
+rth0 = 0.2                    ntrecf = 0                    ntrecr = 0                    
+xbjt = 1.15                   xdif = 1.11                   xrec = 0.9                    
+xtun = 0                      wth0 = 4E-6                   
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0                    
+k1b = 2                       k2b = 0.5                     dk2b = 0.3                    
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6                  
***** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1                    
+ngcon = 2                     xgw = 0                       xgl = 0                       
+gbmin = 1E-12                 
***** Unknown Parameters ***
+gatetype = non_h            dskip = yes
+vsdfb = -4.0
+vsdth = -2.0
+csdmin = 1.0e-4

******************************************************************
******************************************************************

model ps_psoi2_lls bsimsoi 
+ wmax = 5.1u     lmax = 0.6u
***** Flag Parameter ***
+level = 70                    version = 4.5                 soimod = 1
+shmod = 1                     binunit = 1                   mobmod = 1
+capmod = 3                    igcmod = 1                    igbmod = 1
+rgatemod = 1                  vgstcvmod = 2                 gidlmod = 0
+fdmod = 0                     type=p
***** Process Parameter ***
+tsi = 2.8E-8                  tbox = 1.4E-7                 tox = sw_tox_lv
+xj = 4.5E-8                   nch = 1E18                    nsub = -1E15
+ngate = 1E20                  ados = 2.664                  bdos = 0.18144
***** Vth Related  Parameter ***
+vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1        k1 = 0.01                     k1w1 = 0
+k1w2 = 0                      k2 = 0                        k3 = -4
+k3b = 0                       kb1 = 0                       w0 = 0
+lpe0 = -1E-8                  lpeb = 0                      dvt0 = 1.09
+dvt1 = 0.214                  dvt2 = 0                      dvt0w = 0
+dvt1w = 1E5                   dvt2w = 0                     dvtp0 = 0
+dvtp1 = 0                     dvtp2 = 0                     dvtp3 = 0
+dvtp4 = 0                     cdsbs = 1E-3
***** Mobility Related Parameter ***
+u0 = 25*sw_u0_pmos_highvt                       ua = 0                        ub = 0
+uc = 0                        vsat = 1E6                    a0 = 0.372
+ags = 0                       b0 = 0                        b1 = 0
+keta = 0                      ketas = 0                     a1 = 0
+a2 = 0.99                     rdsw = 60*sw_rdsw_pmos_highvt                     prwb = 0
+prwg = 0                      wr = 0.85
***** Subthreshold Related Parameter ***
+voff = -0.05256               nfactor = 2.21                eta0 = 0.08 
+etab = -1E-3                  dsub = 0.1                    cit = 0
+cdsc = 3E-3                   cdscb = 0                     cdscd = -2E-3
***** dW and dL Parameter ***
+lint = -1E-8 - sw_dvar_polycd          ll = 0                        lln = 1
+lw = 0                        lwn = 1                       lwl = 0
+wint = 3E-9                   dwg = 0                       dwb = 0
+wl = 2E-15                    wln = 1                       ww = 0
+wwn = 1                       wwl = 0
***** Output Resistance Related Parameter ***
+pclm = 0.675                  lpclm = 0                     wpclm = 0.5
+pdiblc1 = 0.18                pdiblc2 = 0                   pdiblcb = 0
+drout = 0.571                 pvag = 0                      delta = 0.045
+alpha0 = 0                    fbjtii = 0                    beta0 = 0
+beta1 = 0                     beta2 = 0.13                  vdsatii0 = 1.14
+tii = -0.226                  lii = 0                       esatii = 1E8
+sii0 = 1                      sii1 = 0.1                    sii2 = 0
+siid = 0                      agidl = 0                     bgidl = 1E9
+cgidl = 0                     egidl = 0                     agisl = 0
+bgisl = 1E9                   egisl = 1.2                   ntun = 10
+ndiode = 1.5                  ndioded = 1.5                 nrecf0 = 1.6
+nrecf0d = 1.6                 nrecr0 = 10                   nrecr0d = 10
+isbjt = 1E-4                  idbjt = 1E-4                  isdif = 4.5E-8
+iddif = 4.5E-8                isrec = 5E-5                  idrec = 1E-4
+istun = 1E-5                  ln = 1E-9                     vrec0 = 0.025
+vtun0 = 0                     nbjt = 1.5                    lbjt0 = 2E-7
+vabjt = 10                    aely = 0                      ahli = 1E-15
+rbody = 10                    rbsh = 100                    rhalo = 1E15
***** Gate-to-body tunneling parameters ***
+aigc = 0.62                   bigc = 0                      cigc = 0.1
+aigsd = 9E-3                  bigsd = 0                     cigsd = 0.0905
+nigc = 1                      pigcd = 1                     dlcig = 5E-9
+ntox = 4.5                    toxref = 1.8E-9               ebg = 1.2
+alphagb1 = 0.74               betagb1 = 0.03                vgb1 = 300
+vevb = 0.075                  alphagb2 = 0.43               betagb2 = 0.05
+vgb2 = 17                     vecb = 0.026
***** AC and Capacitance Parameter ***
+xpart = 0                     cgso = 3.5E-10/swr_tox_lv    cgdo = 3.5E-10/swr_tox_lv
+cgeo = 0                      cjswg = 1E-10/sw_rdsw_pmos_highvt   mjswg = 0.5
+cgsl = 8.82E-11               cgdl = 6E-11                  ckappa = 0.1
+cf = 0                        clc = 1E-8                    cle = 0
+dlc = 3.074E-8                llc = 1.3E-16                 dlbg = 0
+dwc = 0                       delvt = 0                     fbody = 0
+acde = 1                      moin = 500                    voffcv = -0.5
***** Temperature coefficient ***
+tnom = 22                     ute = -0.73                   kt1 = -0.042
+kt1l = -1.1E-8                kt2 = -0.3                    ua1 = 0
+ub1 = 0                       uc1 = 0                       at = 3.4E4
+tcjswg = 0                    cth0 = 1E-6                   prt = 0
+rth0 = 0.2                    ntrecf = 0                    ntrecr = 0
+xbjt = 1.15                   xdif = 1.11                   xrec = 0.9
+xtun = 0                      wth0 = 4E-6
***** BSIMSOI Built-In Potential Lowering Model Parameters ***
+vbsa = 0                      nofffd = 1                    vofffd = 0
+k1b = 2                       k2b = 0.5                     dk2b = 0.3
+dvbd0 = 0                     dvbd1 = 0.45                  moinfd = 1E6
***** RF Model Parameters ***
+rshg = 1.6                    xrcrg1 = 6.96                 xrcrg2 = 1
+ngcon = 2                     xgw = 0                       xgl = 0
+gbmin = 1E-12
***** Unknown Parameters ***
+gatetype = non_h            dskip = yes
+vsdfb = -4.0
+vsdth = -2.0
+csdmin = 1.0e-4

******************************************************************
******************************************************************

model res_mim resistor
+l = 5u
+w = 2u
+rsh = 7.2 * sw_res_mim
+tc1=8.96e-4 
+tc2=1.49e-6
******************************************************************
******************************************************************

**  template model for evaluation purposes only
** simulator lang=spectre
model res_nplus_poly resistor

+l = 5u
+w = 2u
+rsh = 3000 * sw_res_nplus_poly

******************************************************************
******************************************************************

**  template model for evaluation purposes only
** simulator lang=spectre
model res_nsil_poly resistor

+l = 5u
+w = 2u
+rsh = 15 * sw_res_nsil_poly

******************************************************************
******************************************************************

inline subckt res_pplus_poly  (r1 r2) 

parameters w=1u l=1u

   res_pplus_poly (r3 r4) main_res w=(w-0.0285u+sw_dvar_polycd*2)  l=l+0.2055u
   rhead1         (r1 r3) head_res                 w=w   l=1u
   rhead2         (r2 r4) head_res                 w=w   l=1u

   model main_res resistor
+rsh = 185 * sw_res_pplus_poly  // extracted value = 184.73
+tc1 = 6.849E-04
+tc2 = 5.464E-07
+tnom = 25

   model head_res resistor
+rsh = 0.5 * 17.5956 * sw_res_head_poly
+tc1 = -4.164E-03
+tc2 = -3.802E-06
+tnom = 25


ends res_pplus_poly
******************************************************************
******************************************************************


**  template model for evaluation purposes only
simulator lang=spectre
subckt res_pplus (POS NEG)
parameters

+ l = 5u
+ w = 2u
+ rsh = 3100

** Netlist:
Rdevice (POS NEG) resistor r=(rsh*l*sw_res_pplus)/w
ends res_pplus

******************************************************************
******************************************************************

//  Pplus Silicide Poly resistor

inline subckt res_psil_poly  (r1 r2)

parameters w=1u l=1u

   res_psil_poly  (r3 r4) main_res w=(w+0.0188u+sw_dvar_polycd*2)  l=l+0.27u
   rhead1         (r1 r3) head_res                      w=w  l=1u
   rhead2         (r2 r4) head_res                      w=w  l=1u

   model main_res resistor
+rsh = 15 * sw_res_psil_poly  // extracted value = 16.36
+tc1 = 2.545E-03 
+tnom = 25

   model head_res resistor
+rsh = 0.5 * 7.73 * sw_res_head_poly
+tc1 = 9.381E-04
+tc2 = -3.305E-07
+tnom = 25


ends res_psil_poly