blob: bf61952c86522ad5733b263c68d769a58180ce0d [file] [log] [blame]
1.0 Purpose
===========
This document provides topological layout rules to generate masks for 0.18ยตm **1.8V/6V CMOS** and
**1.8V/6V/30V/35V LDMOS dual-gate high voltage process in GLOBALFOUNDRIES.**