| Document Revision,Paragraph(s) of Changed,Description of Change(s) |
| 1A,New Creation,NA |
| 1B,4.1 Sheet Resistance,4.1.1. Change the target of wide N+ DIF (salicided) from 8 to 6.3. |
| ,,4.1.2. Change the target of wide P+ DIF (salicided) from 9 to 7. |
| ,,4.1.3. Change the target of wide N+ Poly (salicided) from 8.2 to 6.8. |
| ,,4.1.4. Change the target of wide P+ Poly (salicided) from 9 to 7.3. |
| ,4.7 Temperature Coefficient,4.7.1. Add M4 and M5 TC specs. |
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| 3,Add 6V native NMOS transistor,Add 6V NMOS native transistor. |
| ,, |
| 4,1.3 Sub threshold current,1.3.1 Change the high spec of Nch Ioff from 20pA/um to 100pA/um. |
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| 5,5.0 Medium Voltage Devices (5V),Add 5V devices |
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| 6,7 SAB Devices,Add SAB Devices paper model SPEC |
| 7,"5 General Specification (Resistor, |
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| Capacitor,Oxide, Junction and |
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| Parasitic NPN/PNP)","Add Top metal (30kA) sheet resistance and temperature coefficient in table. Copy |
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| BCDLite spec YI-141-EP056" |
| 8,"6.1C 3000 ohm/sq High Poly |
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| Resistor |
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| 6.2 MIM Capacitor |
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| 5 General specification","Add 3000 ohm/sq High Poly Resistor |
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| Add 2fF MIM option. |
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| Add Top metal (30kA) sheet resistance in table. Copy BCDLite spec YI-141-EP056" |
| 9,8 High Voltage LDMOS Transistor,Add section.8 High Voltage LDMOS Transistor |
| 10,"5 General Specification (Resistor, |
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| Capacitor,Oxide, Junction and |
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| Parasitic NPN/PNP)",Add Top metal (11kA) sheet resistance and temperature coefficient in table |
