Document Revision,Paragraph(s) of Changed,Description of Change(s)
1A,New Creation,NA
1B,4.1 Sheet Resistance,4.1.1. Change the target of  wide N+ DIF (salicided) from 8 to 6.3.
,,4.1.2. Change the target of  wide P+ DIF (salicided) from 9 to 7.
,,4.1.3. Change the target of  wide N+ Poly (salicided) from 8.2 to 6.8.
,,4.1.4. Change the target of  wide P+ Poly (salicided) from 9 to 7.3.
,4.7 Temperature Coefficient,4.7.1.  Add M4 and M5 TC specs.
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3,Add 6V native NMOS transistor,Add 6V NMOS native transistor.
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4,1.3 Sub threshold current,1.3.1 Change the high spec of Nch Ioff from 20pA/um to 100pA/um.
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5,5.0 Medium Voltage Devices (5V),Add 5V devices
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6,7 SAB Devices,Add SAB Devices paper model SPEC
7,"5 General Specification (Resistor,

 Capacitor,Oxide, Junction and

Parasitic NPN/PNP)","Add Top metal (30kA) sheet resistance and temperature coefficient in table. Copy

BCDLite spec YI-141-EP056"
8,"6.1C 3000 ohm/sq High Poly

 Resistor

6.2 MIM Capacitor 

5 General specification","Add 3000 ohm/sq High Poly Resistor

Add 2fF MIM option.

Add Top metal (30kA) sheet resistance in table. Copy BCDLite spec YI-141-EP056"
9,8 High Voltage LDMOS Transistor,Add section.8 High Voltage LDMOS Transistor
10,"5 General Specification (Resistor,

 Capacitor,Oxide, Junction and

Parasitic NPN/PNP)",Add Top metal (11kA) sheet resistance and temperature coefficient in table