blob: f6153ddbec33cee4fe29dd5af1a6e0e65d2ce6b0 [file] [log] [blame]
// 2020/03/09 Suriono
// Why : New S130 models for S130 PDK
// What : Remove "mult" parameter, it is not used anymore.
// Replace "mult" with "m" for matching scale
// ===========================================================
*Auto-converted ../spectremodels_s8x/pmos_v5.pm3 by model_spectre_mismatchmaker.rb
// converted from amsmodels_s8x/pmos_v5.pm3
simulator lang=spectre
// BSIMTran Version 0.1.24, Created on 4-26-2002
// Username: hai
// Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran pmos_bsim4.rf pmos -p -npmos_v5 pmos_v5_modelnamechanged.pm3 pmos_v5_overlap.pm pmos_v5_iv_pxg.pm pmos_v5_cv_pxg.pm pmos_v5_bsimtranoutput.pm3
// Working Directory: /home/hai/models/s8/s8tee/models.3.1/pmos_v5/combined
// Time: Wed Mar 21 11:27:10 2007
// Rule File: pmos_bsim4.rf
// Output File: pmos_v5_bsimtranoutput.pm3
// Input Files:
// (1) pmos_v5_modelnamechanged.pm3
// (2) pmos_v5_overlap.pm
// (3) pmos_v5_iv_pxg.pm
// (4) pmos_v5_cv_pxg.pm
// copyright, Cypress Semiconductor, 2002
// BSIM3.V3 PMOS Model
// spectre mismatch params here
//parameters pmos_v5_lint_slope_spectre = 0.0
//parameters pmos_v5_wint_slope_spectre = 0.0
parameters pmos_v5_toxe_slope_spectre = 0.0
parameters pmos_v5_vth0_slope_spectre = 0.0
parameters pmos_v5_voff_slope_spectre = 0.0
parameters pmos_v5_nfactor_slope_spectre = 0.0
statistics {
process {
}
mismatch {
// vary pmos_v5_lint_slope_spectre dist=gauss std = 1.0
// vary pmos_v5_wint_slope_spectre dist=gauss std = 1.0
vary pmos_v5_toxe_slope_spectre dist=gauss std = 1.0
vary pmos_v5_vth0_slope_spectre dist=gauss std = 1.0
vary pmos_v5_voff_slope_spectre dist=gauss std = 1.0
vary pmos_v5_nfactor_slope_spectre dist=gauss std = 1.0
}
}
inline subckt pmos_v5 (d g s b)
parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1
pmos_v5 (d g s b) pmos_v5_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf
model pmos_v5_model bsim4 {
0: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.995e-06 wmax = 1.0005e-05
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.981+pmos_v5_vth0_diff_0 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59804
+ k2 = 0.024041+pmos_v5_k2_diff_0
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 68340+pmos_v5_vsat_diff_0
+ ua = 2.1590772e-009+pmos_v5_ua_diff_0
+ ub = 8.2164e-019+pmos_v5_ub_diff_0
+ uc = -5.2815e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_0
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.021377+pmos_v5_u0_diff_0
+ a0 = 0.95964+pmos_v5_a0_diff_0
+ keta = -0.08587+pmos_v5_keta_diff_0
+ a1 = 0
+ a2 = 0.5
+ ags = 1.25+pmos_v5_ags_diff_0
+ b0 = 0+pmos_v5_b0_diff_0
+ b1 = 0+pmos_v5_b1_diff_0
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10153677+pmos_v5_voff_diff_0 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.1999+pmos_v5_nfactor_diff_0 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_0
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.064044+pmos_v5_eta0_diff_0
+ etab = -0.0073156
+ dsub = 0.27967
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2297+pmos_v5_pclm_diff_0
+ pdiblc1 = 0.29403034
+ pdiblc2 = 0.0048008826
+ pdiblcb = -0.025
+ drout = 0.89960455
+ pscbe1 = 3.6263996e+008
+ pscbe2 = 1.448673e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 9.713535e-005
+ alpha1 = 0
+ beta0 = 54.684511
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_0
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_0
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 7.5e-009+pmos_v5_agidl_diff_0
+ bgidl = 1.5572e009+pmos_v5_bgidl_diff_0
+ cgidl = 264.48+pmos_v5_cgidl_diff_0
+ egidl = 0.66526877
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.60348+pmos_v5_kt1_diff_0
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.3724
+ ua1 = 5.52e-010
+ ub1 = -2.16e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
1: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.4995e-05 wmax = 1.5005e-05
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.9724+pmos_v5_vth0_diff_1 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57939
+ k2 = 0.020277+pmos_v5_k2_diff_1
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 47889+pmos_v5_vsat_diff_1
+ ua = 1.6494295e-009+pmos_v5_ua_diff_1
+ ub = 1.0975e-018+pmos_v5_ub_diff_1
+ uc = -5.8546e-013
+ rdsw = 788.47+pmos_v5_rdsw_diff_1
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020384+pmos_v5_u0_diff_1
+ a0 = 0.85515+pmos_v5_a0_diff_1
+ keta = -0.084672+pmos_v5_keta_diff_1
+ a1 = 0
+ a2 = 0.5
+ ags = 0.77943+pmos_v5_ags_diff_1
+ b0 = 0+pmos_v5_b0_diff_1
+ b1 = 0+pmos_v5_b1_diff_1
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.077755783+pmos_v5_voff_diff_1 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3116+pmos_v5_nfactor_diff_1 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_1
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 4.2119e-005+pmos_v5_eta0_diff_1
+ etab = 0
+ dsub = 0.54416
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2031+pmos_v5_pclm_diff_1
+ pdiblc1 = 0.3995264
+ pdiblc2 = 0.0015061847
+ pdiblcb = -0.025
+ drout = 0.41068941
+ pscbe1 = 2.994803e+008
+ pscbe2 = 1.4554569e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 6.7813161e-005
+ alpha1 = 0
+ beta0 = 50.152925
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_1
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_1
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 8.3464e-009+pmos_v5_agidl_diff_1
+ bgidl = 1.6889e009+pmos_v5_bgidl_diff_1
+ cgidl = 368+pmos_v5_cgidl_diff_1
+ egidl = 0.77897916
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6412+pmos_v5_kt1_diff_1
+ kt2 = -0.019032
+ at = 31800
+ ute = -1.6069
+ ua1 = 4.1982e-010
+ ub1 = -3.8064e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
2: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.4995e-05 wmax = 1.5005e-05
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.9885+pmos_v5_vth0_diff_2 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59804
+ k2 = 0.024041+pmos_v5_k2_diff_2
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 67000+pmos_v5_vsat_diff_2
+ ua = 2.1590772e-009+pmos_v5_ua_diff_2
+ ub = 9.5539e-019+pmos_v5_ub_diff_2
+ uc = -5.2815e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_2
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.022+pmos_v5_u0_diff_2
+ a0 = 0.95964+pmos_v5_a0_diff_2
+ keta = -0.08587+pmos_v5_keta_diff_2
+ a1 = 0
+ a2 = 0.5
+ ags = 1.25+pmos_v5_ags_diff_2
+ b0 = 0+pmos_v5_b0_diff_2
+ b1 = 0+pmos_v5_b1_diff_2
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10153677+pmos_v5_voff_diff_2 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.1999+pmos_v5_nfactor_diff_2 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_2
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.068847+pmos_v5_eta0_diff_2
+ etab = -0.0038503
+ dsub = 0.27967
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.3366+pmos_v5_pclm_diff_2
+ pdiblc1 = 0.29403034
+ pdiblc2 = 0.0048008826
+ pdiblcb = -0.025
+ drout = 0.89960455
+ pscbe1 = 3.6263996e+008
+ pscbe2 = 1.448673e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 9.713535e-005
+ alpha1 = 0
+ beta0 = 54.684511
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_2
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_2
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.3668e-008+pmos_v5_agidl_diff_2
+ bgidl = 1.6195e009+pmos_v5_bgidl_diff_2
+ cgidl = 316.68+pmos_v5_cgidl_diff_2
+ egidl = 0.66526877
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.60348+pmos_v5_kt1_diff_2
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.3724
+ ua1 = 5.52e-010
+ ub1 = -2.16e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
3: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.94224+pmos_v5_vth0_diff_3 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58139
+ k2 = 0.019018+pmos_v5_k2_diff_3
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 150350+pmos_v5_vsat_diff_3
+ ua = 2.6796985e-009+pmos_v5_ua_diff_3
+ ub = 1.7457e-019+pmos_v5_ub_diff_3
+ uc = -1.4632e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_3
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020291+pmos_v5_u0_diff_3
+ a0 = 0.85794+pmos_v5_a0_diff_3
+ keta = -0.0096207+pmos_v5_keta_diff_3
+ a1 = 0
+ a2 = 0.5
+ ags = 0.13498+pmos_v5_ags_diff_3
+ b0 = 0+pmos_v5_b0_diff_3
+ b1 = 0+pmos_v5_b1_diff_3
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.099014101+pmos_v5_voff_diff_3 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0709+pmos_v5_nfactor_diff_3 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_3
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_3
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.84169+pmos_v5_pclm_diff_3
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.1831475e+008
+ pscbe2 = 1.4985163e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.0150852e-005
+ alpha1 = 0
+ beta0 = 37.469254
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_3
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_3
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.22e-008+pmos_v5_agidl_diff_3
+ bgidl = 1.5831e009+pmos_v5_bgidl_diff_3
+ cgidl = 576+pmos_v5_cgidl_diff_3
+ egidl = 0.89190707
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6000+pmos_v5_kt1_diff_3
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.3908
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
4: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.94224+pmos_v5_vth0_diff_4 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58139
+ k2 = 0.019018391+pmos_v5_k2_diff_4
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 180350+pmos_v5_vsat_diff_4
+ ua = 2.6796985e-009+pmos_v5_ua_diff_4
+ ub = 1.7457e-019+pmos_v5_ub_diff_4
+ uc = -3.6579e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_4
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020291+pmos_v5_u0_diff_4
+ a0 = 0.85794+pmos_v5_a0_diff_4
+ keta = -0.0096207+pmos_v5_keta_diff_4
+ a1 = 0
+ a2 = 0.5
+ ags = 0.14983+pmos_v5_ags_diff_4
+ b0 = 0+pmos_v5_b0_diff_4
+ b1 = 0+pmos_v5_b1_diff_4
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.099014101+pmos_v5_voff_diff_4 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0709+pmos_v5_nfactor_diff_4 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_4
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_4
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.84169224+pmos_v5_pclm_diff_4
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.1831475e+008
+ pscbe2 = 1.4985163e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.0150852e-005
+ alpha1 = 0
+ beta0 = 37.469254
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_4
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_4
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 2e-008+pmos_v5_agidl_diff_4
+ bgidl = 1.6008e009+pmos_v5_bgidl_diff_4
+ cgidl = 1200+pmos_v5_cgidl_diff_4
+ egidl = 0.89190707
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.59+pmos_v5_kt1_diff_4
+ kt2 = -0.019032
+ at = 291500
+ ute = -1.4098
+ ua1 = 5.524e-010
+ ub1 = -4.2529e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
5: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.95024+pmos_v5_vth0_diff_5 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58139
+ k2 = 0.019018391+pmos_v5_k2_diff_5
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 180350+pmos_v5_vsat_diff_5
+ ua = 2.6796985e-009+pmos_v5_ua_diff_5
+ ub = 3.1073e-019+pmos_v5_ub_diff_5
+ uc = -2.3647e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_5
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.0211+pmos_v5_u0_diff_5
+ a0 = 0.9609+pmos_v5_a0_diff_5
+ keta = -0.0096207+pmos_v5_keta_diff_5
+ a1 = 0
+ a2 = 0.5
+ ags = 0.13498356+pmos_v5_ags_diff_5
+ b0 = 0+pmos_v5_b0_diff_5
+ b1 = 0+pmos_v5_b1_diff_5
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.099014101+pmos_v5_voff_diff_5 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0709+pmos_v5_nfactor_diff_5 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_5
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_5
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.84169224+pmos_v5_pclm_diff_5
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.1831475e+008
+ pscbe2 = 1.4985163e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.0150852e-005
+ alpha1 = 0
+ beta0 = 37.469254
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_5
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_5
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 9.8e-009+pmos_v5_agidl_diff_5
+ bgidl = 1.7927e009+pmos_v5_bgidl_diff_5
+ cgidl = 468+pmos_v5_cgidl_diff_5
+ egidl = 0.89190707
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.596+pmos_v5_kt1_diff_5
+ kt2 = -0.019032
+ at = 341570
+ ute = -1.5561
+ ua1 = 2.2096e-011
+ ub1 = -3.7536e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
6: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.495e-06 wmax = 1.505e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope3/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.94153+pmos_v5_vth0_diff_6 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.5906
+ k2 = 0.030282+pmos_v5_k2_diff_6
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 83300+pmos_v5_vsat_diff_6
+ ua = 1.7880272e-009+pmos_v5_ua_diff_6
+ ub = 1.2353e-018+pmos_v5_ub_diff_6
+ uc = -3.6698e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_6
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.017957+pmos_v5_u0_diff_6
+ a0 = 0.81545+pmos_v5_a0_diff_6
+ keta = -0.048114+pmos_v5_keta_diff_6
+ a1 = 0
+ a2 = 0.5
+ ags = 0.84632+pmos_v5_ags_diff_6
+ b0 = 0+pmos_v5_b0_diff_6
+ b1 = 0+pmos_v5_b1_diff_6
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.091667534+pmos_v5_voff_diff_6 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.5024+pmos_v5_nfactor_diff_6 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_6
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.059291+pmos_v5_eta0_diff_6
+ etab = -0.013965
+ dsub = 0.27363
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.035+pmos_v5_pclm_diff_6
+ pdiblc1 = 0.18699149
+ pdiblc2 = 0.0038831667
+ pdiblcb = -0.025
+ drout = 1
+ pscbe1 = 3.4108348e+008
+ pscbe2 = 1.4750539e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.8189581e-005
+ alpha1 = 0
+ beta0 = 45.963568
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_6
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_6
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 8.4723e-009+pmos_v5_agidl_diff_6
+ bgidl = 1.6871e009+pmos_v5_bgidl_diff_6
+ cgidl = 500+pmos_v5_cgidl_diff_6
+ egidl = 0.64214944
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.63348+pmos_v5_kt1_diff_6
+ kt2 = -0.019032
+ at = 5000
+ ute = -1.2996
+ ua1 = 5.52e-010
+ ub1 = -2.16e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
7: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.906+pmos_v5_vth0_diff_7 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59627
+ k2 = 0.015964796+pmos_v5_k2_diff_7
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 45904+pmos_v5_vsat_diff_7
+ ua = 9.3613665e-010+pmos_v5_ua_diff_7
+ ub = 1.4921e-018+pmos_v5_ub_diff_7
+ uc = -2.2219153e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_7
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.015822+pmos_v5_u0_diff_7
+ a0 = 0.87287+pmos_v5_a0_diff_7
+ keta = -0.087434+pmos_v5_keta_diff_7
+ a1 = 0
+ a2 = 0.5
+ ags = 0.70436855+pmos_v5_ags_diff_7
+ b0 = 0+pmos_v5_b0_diff_7
+ b1 = 0+pmos_v5_b1_diff_7
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.079644655+pmos_v5_voff_diff_7 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2953+pmos_v5_nfactor_diff_7 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_7
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.039542+pmos_v5_eta0_diff_7
+ etab = -0.00078616
+ dsub = 0.30791359
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.267944+pmos_v5_pclm_diff_7
+ pdiblc1 = 0.32524895
+ pdiblc2 = 0.0020127014
+ pdiblcb = -0.025
+ drout = 0.99999967
+ pscbe1 = 3.1103691e+008
+ pscbe2 = 1.4418397e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 7.4232853e-005
+ alpha1 = 0
+ beta0 = 49.951734
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_7
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_7
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.8816e-009+pmos_v5_agidl_diff_7
+ bgidl = 1.543e009+pmos_v5_bgidl_diff_7
+ cgidl = 360.18+pmos_v5_cgidl_diff_7
+ egidl = 0.1
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6380+pmos_v5_kt1_diff_7
+ kt2 = -0.019032
+ at = 30000
+ ute = -1.4498
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
8: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.92805+pmos_v5_vth0_diff_8 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59348
+ k2 = 0.017615423+pmos_v5_k2_diff_8
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 21066+pmos_v5_vsat_diff_8
+ ua = 1.6523781e-009+pmos_v5_ua_diff_8
+ ub = 9.7216e-019+pmos_v5_ub_diff_8
+ uc = -1.2317537e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_8
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.018029+pmos_v5_u0_diff_8
+ a0 = 0.96928+pmos_v5_a0_diff_8
+ keta = -0.11488+pmos_v5_keta_diff_8
+ a1 = 0
+ a2 = 0.5
+ ags = 0.73757129+pmos_v5_ags_diff_8
+ b0 = 0+pmos_v5_b0_diff_8
+ b1 = 0+pmos_v5_b1_diff_8
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.086157622+pmos_v5_voff_diff_8 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2919+pmos_v5_nfactor_diff_8 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_8
+ cit = 6.9459796e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0+pmos_v5_eta0_diff_8
+ etab = -0.000648
+ dsub = 0.26
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.9035348+pmos_v5_pclm_diff_8
+ pdiblc1 = 0.3909083
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.63800017
+ pscbe1 = 3.0990248e+008
+ pscbe2 = 1.4767911e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 0.00031976739
+ alpha1 = 0
+ beta0 = 55.34354
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_8
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_8
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 4e-008+pmos_v5_agidl_diff_8
+ bgidl = 1.6056e009+pmos_v5_bgidl_diff_8
+ cgidl = 840+pmos_v5_cgidl_diff_8
+ egidl = 1.4570704
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.615+pmos_v5_kt1_diff_8
+ kt2 = -0.019032
+ at = 16836
+ ute = -1.4038
+ ua1 = 7.7336e-010
+ ub1 = -2.8009e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
9: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.926+pmos_v5_vth0_diff_9 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.6051
+ k2 = 0.015276967+pmos_v5_k2_diff_9
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 120230+pmos_v5_vsat_diff_9
+ ua = 1.9671141e-009+pmos_v5_ua_diff_9
+ ub = 5.3455e-019+pmos_v5_ub_diff_9
+ uc = -2.9902062e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_9
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.018494+pmos_v5_u0_diff_9
+ a0 = 0.86595+pmos_v5_a0_diff_9
+ keta = -0.0098272+pmos_v5_keta_diff_9
+ a1 = 0
+ a2 = 0.5
+ ags = 0.13659769+pmos_v5_ags_diff_9
+ b0 = 0+pmos_v5_b0_diff_9
+ b1 = 0+pmos_v5_b1_diff_9
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.097070481+pmos_v5_voff_diff_9 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 0.99229+pmos_v5_nfactor_diff_9 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_9
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_9
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.91362237+pmos_v5_pclm_diff_9
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.2505867e+008
+ pscbe2 = 1.5007389e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_9
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_9
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 3.36e-008+pmos_v5_agidl_diff_9
+ bgidl = 1.4723e009+pmos_v5_bgidl_diff_9
+ cgidl = 492+pmos_v5_cgidl_diff_9
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.576+pmos_v5_kt1_diff_9
+ kt2 = -0.019032
+ at = 219650
+ ute = -1.4104
+ ua1 = 2.2096e-011
+ ub1 = -2.3998e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
10: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.995e-06 lmax = 8.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.94868+pmos_v5_vth0_diff_10 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58485
+ k2 = 0.020475051+pmos_v5_k2_diff_10
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 80156+pmos_v5_vsat_diff_10
+ ua = 2.2507416e-009+pmos_v5_ua_diff_10
+ ub = 3.4083e-019+pmos_v5_ub_diff_10
+ uc = -4.5108582e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_10
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.01919+pmos_v5_u0_diff_10
+ a0 = 0.90565+pmos_v5_a0_diff_10
+ keta = -0.0081819+pmos_v5_keta_diff_10
+ a1 = 0
+ a2 = 0.5
+ ags = 0.13283238+pmos_v5_ags_diff_10
+ b0 = 0+pmos_v5_b0_diff_10
+ b1 = 0+pmos_v5_b1_diff_10
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10768013+pmos_v5_voff_diff_10 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 0.94783+pmos_v5_nfactor_diff_10 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_10
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_10
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.08353125+pmos_v5_pclm_diff_10
+ pdiblc1 = 0.39
+ pdiblc2 = 0.0034380666
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.2471761e+008
+ pscbe2 = 1.4998723e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 6.4242641e-005
+ alpha1 = 0
+ beta0 = 39.039478
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_10
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_10
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 2e-008+pmos_v5_agidl_diff_10
+ bgidl = 1.5204e009+pmos_v5_bgidl_diff_10
+ cgidl = 1400+pmos_v5_cgidl_diff_10
+ egidl = 1.5199352
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.556+pmos_v5_kt1_diff_10
+ kt2 = -0.019032
+ at = 151090
+ ute = -1.5561
+ ua1 = 2.2096e-011
+ ub1 = -3.0767e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
11: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope2/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.89504+pmos_v5_vth0_diff_11 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.55947
+ k2 = 0.036713432+pmos_v5_k2_diff_11
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 117570+pmos_v5_vsat_diff_11
+ ua = 1.2669543e-009+pmos_v5_ua_diff_11
+ ub = 1.2082e-018+pmos_v5_ub_diff_11
+ uc = -5.9494373e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_11
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.016056+pmos_v5_u0_diff_11
+ a0 = 0.72074+pmos_v5_a0_diff_11
+ keta = -0.0084885+pmos_v5_keta_diff_11
+ a1 = 0
+ a2 = 0.5
+ ags = 0.11578365+pmos_v5_ags_diff_11
+ b0 = 0+pmos_v5_b0_diff_11
+ b1 = 0+pmos_v5_b1_diff_11
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.11318245+pmos_v5_voff_diff_11 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2536+pmos_v5_nfactor_diff_11 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_11
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.15643+pmos_v5_eta0_diff_11
+ etab = -0.010946
+ dsub = 0.27819971
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.64077291+pmos_v5_pclm_diff_11
+ pdiblc1 = 0.13281489
+ pdiblc2 = 0.0020780138
+ pdiblcb = -0.225
+ drout = 1
+ pscbe1 = 8e+008
+ pscbe2 = 5.6866809e-009
+ pvag = 0
+ delta = 0.01
+ alpha0 = 4.0002497e-006
+ alpha1 = 0
+ beta0 = 38.089036
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_11
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_11
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.24e-008+pmos_v5_agidl_diff_11
+ bgidl = 2.0463e009+pmos_v5_bgidl_diff_11
+ cgidl = 300+pmos_v5_cgidl_diff_11
+ egidl = 0.1352153
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.60348+pmos_v5_kt1_diff_11
+ kt2 = -0.019032
+ at = 1000
+ ute = -1.2208
+ ua1 = 5.52e-010
+ ub1 = -2.16e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
12: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.91036+pmos_v5_vth0_diff_12 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.62735
+ k2 = 0.017816539+pmos_v5_k2_diff_12
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 74424+pmos_v5_vsat_diff_12
+ ua = 1.2023341e-009+pmos_v5_ua_diff_12
+ ub = 1.4559e-018+pmos_v5_ub_diff_12
+ uc = -2.7539501e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_12
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.016763+pmos_v5_u0_diff_12
+ a0 = 0.84201+pmos_v5_a0_diff_12
+ keta = -0.051484+pmos_v5_keta_diff_12
+ a1 = 0
+ a2 = 0.5
+ ags = 0.72220108+pmos_v5_ags_diff_12
+ b0 = 0+pmos_v5_b0_diff_12
+ b1 = 0+pmos_v5_b1_diff_12
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.079967669+pmos_v5_voff_diff_12 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.473+pmos_v5_nfactor_diff_12 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_12
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.017878+pmos_v5_eta0_diff_12
+ etab = 0
+ dsub = 0.27181946
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.0998724+pmos_v5_pclm_diff_12
+ pdiblc1 = 0.39855546
+ pdiblc2 = 0.0078480034
+ pdiblcb = -0.025
+ drout = 0.64228671
+ pscbe1 = 3.3852051e+008
+ pscbe2 = 1.4615273e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.9655204e-005
+ alpha1 = 0
+ beta0 = 48.175076
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_12
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_12
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 4.7e-008+pmos_v5_agidl_diff_12
+ bgidl = 1.5488e009+pmos_v5_bgidl_diff_12
+ cgidl = 966+pmos_v5_cgidl_diff_12
+ egidl = 1.2131988
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.65348+pmos_v5_kt1_diff_12
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.3412
+ ua1 = 5.52e-010
+ ub1 = -1.8696e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.02e-06
+ sbref = 2.01e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
13: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.95e-07 lmax = 8.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.88436+pmos_v5_vth0_diff_13 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57696
+ k2 = 0.02202554+pmos_v5_k2_diff_13
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 57942+pmos_v5_vsat_diff_13
+ ua = 1.3736548e-009+pmos_v5_ua_diff_13
+ ub = 1.2992e-018+pmos_v5_ub_diff_13
+ uc = -1.8899043e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_13
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.016917+pmos_v5_u0_diff_13
+ a0 = 0.79601+pmos_v5_a0_diff_13
+ keta = -0.064617+pmos_v5_keta_diff_13
+ a1 = 0
+ a2 = 0.5
+ ags = 0.7357361+pmos_v5_ags_diff_13
+ b0 = 0+pmos_v5_b0_diff_13
+ b1 = 0+pmos_v5_b1_diff_13
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.083615082+pmos_v5_voff_diff_13 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.4934+pmos_v5_nfactor_diff_13 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_13
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.0068242+pmos_v5_eta0_diff_13
+ etab = -0.0040945
+ dsub = 0.26520582
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.152681+pmos_v5_pclm_diff_13
+ pdiblc1 = 0.45413396
+ pdiblc2 = 0.0066035801
+ pdiblcb = -0.025
+ drout = 0.54609838
+ pscbe1 = 3.6891994e+008
+ pscbe2 = 1.3484359e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 3.2455677e-005
+ alpha1 = 0
+ beta0 = 47.447604
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_13
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_13
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 7.7552e-009+pmos_v5_agidl_diff_13
+ bgidl = 1.7886e009+pmos_v5_bgidl_diff_13
+ cgidl = 510+pmos_v5_cgidl_diff_13
+ egidl = 0.16211671
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6405+pmos_v5_kt1_diff_13
+ kt2 = -0.019032
+ at = 20000
+ ute = -1.4798
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.41e-06
+ sbref = 2.41e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
14: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.9995e-05 wmax = 2.0005e-05
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.97224+pmos_v5_vth0_diff_14 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57939
+ k2 = 0.020277+pmos_v5_k2_diff_14
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 47889+pmos_v5_vsat_diff_14
+ ua = 1.6494295e-009+pmos_v5_ua_diff_14
+ ub = 1.0975e-018+pmos_v5_ub_diff_14
+ uc = -5.8546e-013
+ rdsw = 788.47+pmos_v5_rdsw_diff_14
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020384+pmos_v5_u0_diff_14
+ a0 = 0.85515+pmos_v5_a0_diff_14
+ keta = -0.084672+pmos_v5_keta_diff_14
+ a1 = 0
+ a2 = 0.5
+ ags = 0.77943+pmos_v5_ags_diff_14
+ b0 = 0+pmos_v5_b0_diff_14
+ b1 = 0+pmos_v5_b1_diff_14
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.077755783+pmos_v5_voff_diff_14 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3116+pmos_v5_nfactor_diff_14 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_14
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 2.8641e-005+pmos_v5_eta0_diff_14
+ etab = 0
+ dsub = 0.54416
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2031+pmos_v5_pclm_diff_14
+ pdiblc1 = 0.3995264
+ pdiblc2 = 0.0015061847
+ pdiblcb = -0.025
+ drout = 0.41068941
+ pscbe1 = 2.994803e+008
+ pscbe2 = 1.4554569e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 6.7813161e-005
+ alpha1 = 0
+ beta0 = 50.152925
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_14
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_14
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.085e-008+pmos_v5_agidl_diff_14
+ bgidl = 1.6213e009+pmos_v5_bgidl_diff_14
+ cgidl = 500.48+pmos_v5_cgidl_diff_14
+ egidl = 0.77897916
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6362+pmos_v5_kt1_diff_14
+ kt2 = -0.019032
+ at = 29800
+ ute = -1.6069
+ ua1 = 4.1982e-010
+ ub1 = -3.8064e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
15: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.9995e-05 wmax = 2.0005e-05
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.9885+pmos_v5_vth0_diff_15 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59804
+ k2 = 0.024041+pmos_v5_k2_diff_15
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 67000+pmos_v5_vsat_diff_15
+ ua = 2.1590772e-009+pmos_v5_ua_diff_15
+ ub = 9.5539e-019+pmos_v5_ub_diff_15
+ uc = -5.2815e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_15
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.022232+pmos_v5_u0_diff_15
+ a0 = 0.95964+pmos_v5_a0_diff_15
+ keta = -0.08587+pmos_v5_keta_diff_15
+ a1 = 0
+ a2 = 0.5
+ ags = 1.25+pmos_v5_ags_diff_15
+ b0 = 0+pmos_v5_b0_diff_15
+ b1 = 0+pmos_v5_b1_diff_15
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10153677+pmos_v5_voff_diff_15 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.1999+pmos_v5_nfactor_diff_15 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_15
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.080055+pmos_v5_eta0_diff_15
+ etab = -0.0038503
+ dsub = 0.27967
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.3366+pmos_v5_pclm_diff_15
+ pdiblc1 = 0.29403034
+ pdiblc2 = 0.0048008826
+ pdiblcb = -0.025
+ drout = 0.89960455
+ pscbe1 = 3.6263996e+008
+ pscbe2 = 1.448673e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 9.713535e-005
+ alpha1 = 0
+ beta0 = 54.684511
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_15
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_15
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.3888e-008+pmos_v5_agidl_diff_15
+ bgidl = 1.6145e009+pmos_v5_bgidl_diff_15
+ cgidl = 876+pmos_v5_cgidl_diff_15
+ egidl = 0.66526877
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.61348+pmos_v5_kt1_diff_15
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.3724
+ ua1 = 5.52e-010
+ ub1 = -2.16e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
16: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.94424+pmos_v5_vth0_diff_16 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57939
+ k2 = 0.020277382+pmos_v5_k2_diff_16
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 47889+pmos_v5_vsat_diff_16
+ ua = 1.6494295e-009+pmos_v5_ua_diff_16
+ ub = 1.2762e-018+pmos_v5_ub_diff_16
+ uc = -5.8546e-013
+ rdsw = 788.47+pmos_v5_rdsw_diff_16
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.019197+pmos_v5_u0_diff_16
+ a0 = 0.85515+pmos_v5_a0_diff_16
+ keta = -0.084672+pmos_v5_keta_diff_16
+ a1 = 0
+ a2 = 0.5
+ ags = 0.72169009+pmos_v5_ags_diff_16
+ b0 = 0+pmos_v5_b0_diff_16
+ b1 = 0+pmos_v5_b1_diff_16
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.077755783+pmos_v5_voff_diff_16 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3116+pmos_v5_nfactor_diff_16 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_16
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.0087749+pmos_v5_eta0_diff_16
+ etab = 0
+ dsub = 0.2989895
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2031125+pmos_v5_pclm_diff_16
+ pdiblc1 = 0.3995264
+ pdiblc2 = 0.0015061847
+ pdiblcb = -0.025
+ drout = 0.41068941
+ pscbe1 = 2.994803e+008
+ pscbe2 = 1.4554569e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 6.7813161e-005
+ alpha1 = 0
+ beta0 = 50.152925
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_16
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_16
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 6.0144e-009+pmos_v5_agidl_diff_16
+ bgidl = 1.5638e009+pmos_v5_bgidl_diff_16
+ cgidl = 920+pmos_v5_cgidl_diff_16
+ egidl = 0.77897916
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6300+pmos_v5_kt1_diff_16
+ kt2 = -0.019032
+ at = 30000
+ ute = -1.4608
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
17: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.97089+pmos_v5_vth0_diff_17 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.56874
+ k2 = 0.021845+pmos_v5_k2_diff_17
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 136210+pmos_v5_vsat_diff_17
+ ua = 2.5957213e-009+pmos_v5_ua_diff_17
+ ub = 5.9095e-019+pmos_v5_ub_diff_17
+ uc = 0
+ rdsw = 788.47+pmos_v5_rdsw_diff_17
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.021802+pmos_v5_u0_diff_17
+ a0 = 0.92576+pmos_v5_a0_diff_17
+ keta = -0.01712+pmos_v5_keta_diff_17
+ a1 = 0
+ a2 = 0.5
+ ags = 0.19+pmos_v5_ags_diff_17
+ b0 = 0+pmos_v5_b0_diff_17
+ b1 = 0+pmos_v5_b1_diff_17
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.12041324+pmos_v5_voff_diff_17 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2+pmos_v5_nfactor_diff_17 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_17
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.1438+pmos_v5_eta0_diff_17
+ etab = -0.015108
+ dsub = 0.29315
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.60569+pmos_v5_pclm_diff_17
+ pdiblc1 = 0.1893326
+ pdiblc2 = 0.003828528
+ pdiblcb = -0.225
+ drout = 1
+ pscbe1 = 3.6834658e+008
+ pscbe2 = 1.4543145e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_17
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_17
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 9.3141e-009+pmos_v5_agidl_diff_17
+ bgidl = 1.2201e009+pmos_v5_bgidl_diff_17
+ cgidl = 468.55+pmos_v5_cgidl_diff_17
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.575+pmos_v5_kt1_diff_17
+ kt2 = -0.019032
+ at = 171730
+ ute = -1.4498
+ ua1 = 5.524e-010
+ ub1 = -4.1218e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
18: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.97767+pmos_v5_vth0_diff_18 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58606
+ k2 = 0.019966+pmos_v5_k2_diff_18
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 124910+pmos_v5_vsat_diff_18
+ ua = 2.9651633e-009+pmos_v5_ua_diff_18
+ ub = 1.3357e-019+pmos_v5_ub_diff_18
+ uc = -2.8099e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_18
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.022592+pmos_v5_u0_diff_18
+ a0 = 0.8749+pmos_v5_a0_diff_18
+ keta = -0.010964+pmos_v5_keta_diff_18
+ a1 = 0
+ a2 = 0.5
+ ags = 0.15682+pmos_v5_ags_diff_18
+ b0 = 0+pmos_v5_b0_diff_18
+ b1 = 0+pmos_v5_b1_diff_18
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.091596347+pmos_v5_voff_diff_18 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 0.8+pmos_v5_nfactor_diff_18 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_18
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_18
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.83237107+pmos_v5_pclm_diff_18
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 1e+008
+ pscbe2 = 4.602312e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.2543089e-005
+ alpha1 = 0
+ beta0 = 37.371509
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_18
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_18
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 9.4e-009+pmos_v5_agidl_diff_18
+ bgidl = 1.8618e009+pmos_v5_bgidl_diff_18
+ cgidl = 660+pmos_v5_cgidl_diff_18
+ egidl = 0.16572358
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.576+pmos_v5_kt1_diff_18
+ kt2 = -0.019032
+ at = 229660
+ ute = -1.5561
+ ua1 = 2.2096e-011
+ ub1 = -3.7536e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
19: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.995e-06 lmax = 8.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.97709+pmos_v5_vth0_diff_19 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59521
+ k2 = 0.019927+pmos_v5_k2_diff_19
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 200000+pmos_v5_vsat_diff_19
+ ua = 2.7044348e-009+pmos_v5_ua_diff_19
+ ub = 1.4379e-019+pmos_v5_ub_diff_19
+ uc = -3.9972e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_19
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.021226+pmos_v5_u0_diff_19
+ a0 = 0.89552+pmos_v5_a0_diff_19
+ keta = -0.0079259+pmos_v5_keta_diff_19
+ a1 = 0
+ a2 = 0.5
+ ags = 0.1318+pmos_v5_ags_diff_19
+ b0 = 0+pmos_v5_b0_diff_19
+ b1 = 0+pmos_v5_b1_diff_19
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.093204657+pmos_v5_voff_diff_19 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0849+pmos_v5_nfactor_diff_19 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_19
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_19
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.08353125+pmos_v5_pclm_diff_19
+ pdiblc1 = 0.39
+ pdiblc2 = 0.0029407877
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 3.3371283e+008
+ pscbe2 = 1.5000958e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 5.0667189e-005
+ alpha1 = 0
+ beta0 = 38.266046
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_19
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_19
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.4775e-008+pmos_v5_agidl_diff_19
+ bgidl = 1.7757e009+pmos_v5_bgidl_diff_19
+ cgidl = 1000+pmos_v5_cgidl_diff_19
+ egidl = 0.69350825
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.576+pmos_v5_kt1_diff_19
+ kt2 = -0.019032
+ at = 448800
+ ute = -1.5361
+ ua1 = 2.2096e-011
+ ub1 = -3.6627e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
20: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.95089+pmos_v5_vth0_diff_20 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.56874
+ k2 = 0.028835+pmos_v5_k2_diff_20
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 130760+pmos_v5_vsat_diff_20
+ ua = 2.5957213e-009+pmos_v5_ua_diff_20
+ ub = 4.0614e-019+pmos_v5_ub_diff_20
+ uc = -3.6e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_20
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020518+pmos_v5_u0_diff_20
+ a0 = 0.92576+pmos_v5_a0_diff_20
+ keta = -0.00090104+pmos_v5_keta_diff_20
+ a1 = 0
+ a2 = 0.5
+ ags = 0.19+pmos_v5_ags_diff_20
+ b0 = 0+pmos_v5_b0_diff_20
+ b1 = 0+pmos_v5_b1_diff_20
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.12041324+pmos_v5_voff_diff_20 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2+pmos_v5_nfactor_diff_20 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_20
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.1438+pmos_v5_eta0_diff_20
+ etab = -0.015108
+ dsub = 0.29315
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.60569+pmos_v5_pclm_diff_20
+ pdiblc1 = 0.1893326
+ pdiblc2 = 0.003828528
+ pdiblcb = -0.225
+ drout = 1
+ pscbe1 = 3.6834658e+008
+ pscbe2 = 1.4543145e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_20
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_20
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.63e-008+pmos_v5_agidl_diff_20
+ bgidl = 1.2201e009+pmos_v5_bgidl_diff_20
+ cgidl = 768.42+pmos_v5_cgidl_diff_20
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.58948+pmos_v5_kt1_diff_20
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.2724
+ ua1 = 5.52e-010
+ ub1 = -2.894e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
21: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.93332+pmos_v5_vth0_diff_21 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57633
+ k2 = 0.025668+pmos_v5_k2_diff_21
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 78336+pmos_v5_vsat_diff_21
+ ua = 2.3466113e-009+pmos_v5_ua_diff_21
+ ub = 4.9371e-019+pmos_v5_ub_diff_21
+ uc = -2.4658e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_21
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.019791+pmos_v5_u0_diff_21
+ a0 = 0.84351+pmos_v5_a0_diff_21
+ keta = -0.043025+pmos_v5_keta_diff_21
+ a1 = 0
+ a2 = 0.5
+ ags = 0.72112+pmos_v5_ags_diff_21
+ b0 = 0+pmos_v5_b0_diff_21
+ b1 = 0+pmos_v5_b1_diff_21
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.072821331+pmos_v5_voff_diff_21 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.495+pmos_v5_nfactor_diff_21 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_21
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.00024193+pmos_v5_eta0_diff_21
+ etab = 0
+ dsub = 0.27482
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.97221+pmos_v5_pclm_diff_21
+ pdiblc1 = 0.45695731
+ pdiblc2 = 0.011410926
+ pdiblcb = -0.025
+ drout = 0.43179535
+ pscbe1 = 4e+008
+ pscbe2 = 1.3503615e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.7240171e-005
+ alpha1 = 0
+ beta0 = 45.34673
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_21
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_21
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.1694e-008+pmos_v5_agidl_diff_21
+ bgidl = 1.8073e009+pmos_v5_bgidl_diff_21
+ cgidl = 520+pmos_v5_cgidl_diff_21
+ egidl = 0.48103697
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.64548+pmos_v5_kt1_diff_21
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.4573
+ ua1 = 5.52e-010
+ ub1 = -3.2992e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.02e-06
+ sbref = 2.01e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
22: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.94824+pmos_v5_vth0_diff_22 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57939
+ k2 = 0.020277+pmos_v5_k2_diff_22
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 47889+pmos_v5_vsat_diff_22
+ ua = 1.6494295e-009+pmos_v5_ua_diff_22
+ ub = 1.0975e-018+pmos_v5_ub_diff_22
+ uc = -5.8546e-013
+ rdsw = 788.47+pmos_v5_rdsw_diff_22
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.019197+pmos_v5_u0_diff_22
+ a0 = 0.85515+pmos_v5_a0_diff_22
+ keta = -0.084672+pmos_v5_keta_diff_22
+ a1 = 0
+ a2 = 0.5
+ ags = 0.77943+pmos_v5_ags_diff_22
+ b0 = 0+pmos_v5_b0_diff_22
+ b1 = 0+pmos_v5_b1_diff_22
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.077755783+pmos_v5_voff_diff_22 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3116+pmos_v5_nfactor_diff_22 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_22
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.00052649+pmos_v5_eta0_diff_22
+ etab = 0
+ dsub = 0.29899
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2031125+pmos_v5_pclm_diff_22
+ pdiblc1 = 0.3995264
+ pdiblc2 = 0.0015061847
+ pdiblcb = -0.025
+ drout = 0.41068941
+ pscbe1 = 2.994803e+008
+ pscbe2 = 1.4554569e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 6.7813161e-005
+ alpha1 = 0
+ beta0 = 50.152925
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_22
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_22
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 9.2738e-009+pmos_v5_agidl_diff_22
+ bgidl = 1.5638e009+pmos_v5_bgidl_diff_22
+ cgidl = 368+pmos_v5_cgidl_diff_22
+ egidl = 0.77897916
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6300+pmos_v5_kt1_diff_22
+ kt2 = -0.019032
+ at = 30000
+ ute = -1.4608
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
23: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.98389+pmos_v5_vth0_diff_23 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.56874
+ k2 = 0.021845+pmos_v5_k2_diff_23
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 126210+pmos_v5_vsat_diff_23
+ ua = 2.5957213e-009+pmos_v5_ua_diff_23
+ ub = 8.9538e-019+pmos_v5_ub_diff_23
+ uc = 0
+ rdsw = 788.47+pmos_v5_rdsw_diff_23
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.023194+pmos_v5_u0_diff_23
+ a0 = 0.92576+pmos_v5_a0_diff_23
+ keta = -0.01712+pmos_v5_keta_diff_23
+ a1 = 0
+ a2 = 0.5
+ ags = 0.19+pmos_v5_ags_diff_23
+ b0 = 0+pmos_v5_b0_diff_23
+ b1 = 0+pmos_v5_b1_diff_23
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.12041324+pmos_v5_voff_diff_23 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2+pmos_v5_nfactor_diff_23 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_23
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.1438+pmos_v5_eta0_diff_23
+ etab = -0.015108
+ dsub = 0.29315
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.60569082+pmos_v5_pclm_diff_23
+ pdiblc1 = 0.1893326
+ pdiblc2 = 0.003828528
+ pdiblcb = -0.225
+ drout = 1
+ pscbe1 = 3.6834658e+008
+ pscbe2 = 1.4543145e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_23
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_23
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 9.7022e-009+pmos_v5_agidl_diff_23
+ bgidl = 1.2201e009+pmos_v5_bgidl_diff_23
+ cgidl = 468.55+pmos_v5_cgidl_diff_23
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.5750+pmos_v5_kt1_diff_23
+ kt2 = -0.019032
+ at = 104800
+ ute = -1.4498
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
24: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.98767+pmos_v5_vth0_diff_24 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58606
+ k2 = 0.019966+pmos_v5_k2_diff_24
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 124910+pmos_v5_vsat_diff_24
+ ua = 2.9651633e-009+pmos_v5_ua_diff_24
+ ub = 2.244e-019+pmos_v5_ub_diff_24
+ uc = -2.8099e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_24
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.023496+pmos_v5_u0_diff_24
+ a0 = 0.8749+pmos_v5_a0_diff_24
+ keta = -0.010964+pmos_v5_keta_diff_24
+ a1 = 0
+ a2 = 0.5
+ ags = 0.15682+pmos_v5_ags_diff_24
+ b0 = 0+pmos_v5_b0_diff_24
+ b1 = 0+pmos_v5_b1_diff_24
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.091596347+pmos_v5_voff_diff_24 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 0.8+pmos_v5_nfactor_diff_24 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_24
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_24
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.83237107+pmos_v5_pclm_diff_24
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 1e+008
+ pscbe2 = 4.602312e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.2543089e-005
+ alpha1 = 0
+ beta0 = 37.371509
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_24
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_24
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 7.896e-009+pmos_v5_agidl_diff_24
+ bgidl = 1.8618e009+pmos_v5_bgidl_diff_24
+ cgidl = 660+pmos_v5_cgidl_diff_24
+ egidl = 0.16572358
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.576+pmos_v5_kt1_diff_24
+ kt2 = -0.019032
+ at = 235700
+ ute = -1.5561
+ ua1 = 2.2096e-011
+ ub1 = -3.8766e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
25: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.99209+pmos_v5_vth0_diff_25 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59521
+ k2 = 0.019927+pmos_v5_k2_diff_25
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 200000+pmos_v5_vsat_diff_25
+ ua = 2.7044348e-009+pmos_v5_ua_diff_25
+ ub = 3.9379e-019+pmos_v5_ub_diff_25
+ uc = -3.9972e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_25
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.0225+pmos_v5_u0_diff_25
+ a0 = 0.89552+pmos_v5_a0_diff_25
+ keta = -0.0079259+pmos_v5_keta_diff_25
+ a1 = 0
+ a2 = 0.5
+ ags = 0.1318+pmos_v5_ags_diff_25
+ b0 = 0+pmos_v5_b0_diff_25
+ b1 = 0+pmos_v5_b1_diff_25
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.093204657+pmos_v5_voff_diff_25 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0849+pmos_v5_nfactor_diff_25 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_25
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_25
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.08353125+pmos_v5_pclm_diff_25
+ pdiblc1 = 0.39
+ pdiblc2 = 0.0029407877
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 3.3371283e+008
+ pscbe2 = 1.5000958e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 5.0667189e-005
+ alpha1 = 0
+ beta0 = 38.266046
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_25
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_25
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.5366e-008+pmos_v5_agidl_diff_25
+ bgidl = 1.7047e009+pmos_v5_bgidl_diff_25
+ cgidl = 1000+pmos_v5_cgidl_diff_25
+ egidl = 0.69350825
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.576+pmos_v5_kt1_diff_25
+ kt2 = -0.019032
+ at = 448800
+ ute = -1.5361
+ ua1 = 2.2096e-011
+ ub1 = -3.6627e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
26: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.98229+pmos_v5_vth0_diff_26 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58637
+ k2 = 0.02619+pmos_v5_k2_diff_26
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 73540+pmos_v5_vsat_diff_26
+ ua = 2.8298029e-009+pmos_v5_ua_diff_26
+ ub = 5.993e-019+pmos_v5_ub_diff_26
+ uc = -9.8477e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_26
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.02333+pmos_v5_u0_diff_26
+ a0 = 0.79883+pmos_v5_a0_diff_26
+ keta = -0.075644+pmos_v5_keta_diff_26
+ a1 = 0
+ a2 = 0.5
+ ags = 1.25+pmos_v5_ags_diff_26
+ b0 = 0+pmos_v5_b0_diff_26
+ b1 = 0+pmos_v5_b1_diff_26
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.13295587+pmos_v5_voff_diff_26 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3232+pmos_v5_nfactor_diff_26 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_26
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.040327+pmos_v5_eta0_diff_26
+ etab = -0.010229
+ dsub = 0.29048905
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.184192+pmos_v5_pclm_diff_26
+ pdiblc1 = 0.39269218
+ pdiblc2 = 0.0079692374
+ pdiblcb = -0.025
+ drout = 0.72266506
+ pscbe1 = 3.1758291e+008
+ pscbe2 = 1.4459233e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 4.4081425e-005
+ alpha1 = 0
+ beta0 = 50.534039
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_26
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_26
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.1634e-008+pmos_v5_agidl_diff_26
+ bgidl = 1.6718e009+pmos_v5_bgidl_diff_26
+ cgidl = 400+pmos_v5_cgidl_diff_26
+ egidl = 0.67432849
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.58348+pmos_v5_kt1_diff_26
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.3724
+ ua1 = 5.52e-010
+ ub1 = -2.894e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
27: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.96559+pmos_v5_vth0_diff_27 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.56924
+ k2 = 0.025929+pmos_v5_k2_diff_27
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 60844+pmos_v5_vsat_diff_27
+ ua = 4.0655985e-009+pmos_v5_ua_diff_27
+ ub = -5.6854e-021+pmos_v5_ub_diff_27
+ uc = -4.527e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_27
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.027729+pmos_v5_u0_diff_27
+ a0 = 0.80598+pmos_v5_a0_diff_27
+ keta = -0.096905+pmos_v5_keta_diff_27
+ a1 = 0
+ a2 = 0.5
+ ags = 1.25+pmos_v5_ags_diff_27
+ b0 = 0+pmos_v5_b0_diff_27
+ b1 = 0+pmos_v5_b1_diff_27
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10586774+pmos_v5_voff_diff_27 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3874+pmos_v5_nfactor_diff_27 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_27
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.023711+pmos_v5_eta0_diff_27
+ etab = 0
+ dsub = 0.30839886
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2669585+pmos_v5_pclm_diff_27
+ pdiblc1 = 0.56716046
+ pdiblc2 = 0.0054000816
+ pdiblcb = -0.025
+ drout = 0.89134169
+ pscbe1 = 3.8734436e+008
+ pscbe2 = 1.4665318e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 7.1782526e-005
+ alpha1 = 0
+ beta0 = 52.761864
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_27
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_27
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 6.5211e-009+pmos_v5_agidl_diff_27
+ bgidl = 1.7072e009+pmos_v5_bgidl_diff_27
+ cgidl = 230+pmos_v5_cgidl_diff_27
+ egidl = 0.76686217
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.61848+pmos_v5_kt1_diff_27
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.4273
+ ua1 = 5.52e-010
+ ub1 = -3.2992e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.02e-06
+ sbref = 2.01e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
28: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.93332+pmos_v5_vth0_diff_28 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57633
+ k2 = 0.025668+pmos_v5_k2_diff_28
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 61200+pmos_v5_vsat_diff_28
+ ua = 2.3466113e-009+pmos_v5_ua_diff_28
+ ub = 7.4804e-019+pmos_v5_ub_diff_28
+ uc = -2.4658e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_28
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.021512+pmos_v5_u0_diff_28
+ a0 = 0.84351+pmos_v5_a0_diff_28
+ keta = -0.06519+pmos_v5_keta_diff_28
+ a1 = 0
+ a2 = 0.5
+ ags = 0.72112+pmos_v5_ags_diff_28
+ b0 = 0+pmos_v5_b0_diff_28
+ b1 = 0+pmos_v5_b1_diff_28
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.072821331+pmos_v5_voff_diff_28 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.495+pmos_v5_nfactor_diff_28 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_28
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.00071157+pmos_v5_eta0_diff_28
+ etab = -0.00053192
+ dsub = 0.27482351
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.97220765+pmos_v5_pclm_diff_28
+ pdiblc1 = 0.45695731
+ pdiblc2 = 0.011410926
+ pdiblcb = -0.025
+ drout = 0.43179535
+ pscbe1 = 4e+008
+ pscbe2 = 1.3503615e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.7240171e-005
+ alpha1 = 0
+ beta0 = 45.34673
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_28
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_28
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.6706e-008+pmos_v5_agidl_diff_28
+ bgidl = 1.8073e009+pmos_v5_bgidl_diff_28
+ cgidl = 520+pmos_v5_cgidl_diff_28
+ egidl = 0.48103697
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6405+pmos_v5_kt1_diff_28
+ kt2 = -0.019032
+ at = 25000
+ ute = -1.4798
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.41e-06
+ sbref = 2.41e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
29: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.96224+pmos_v5_vth0_diff_29 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57939
+ k2 = 0.020277+pmos_v5_k2_diff_29
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 47889+pmos_v5_vsat_diff_29
+ ua = 1.6494295e-009+pmos_v5_ua_diff_29
+ ub = 1.0975e-018+pmos_v5_ub_diff_29
+ uc = -5.8546e-013
+ rdsw = 788.47+pmos_v5_rdsw_diff_29
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.0196+pmos_v5_u0_diff_29
+ a0 = 0.85515+pmos_v5_a0_diff_29
+ keta = -0.084672+pmos_v5_keta_diff_29
+ a1 = 0
+ a2 = 0.5
+ ags = 0.77943+pmos_v5_ags_diff_29
+ b0 = 0+pmos_v5_b0_diff_29
+ b1 = 0+pmos_v5_b1_diff_29
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.077755783+pmos_v5_voff_diff_29 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3116+pmos_v5_nfactor_diff_29 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_29
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 4.2119e-005+pmos_v5_eta0_diff_29
+ etab = 0
+ dsub = 0.54416
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2031125+pmos_v5_pclm_diff_29
+ pdiblc1 = 0.3995264
+ pdiblc2 = 0.0015061847
+ pdiblcb = -0.025
+ drout = 0.41068941
+ pscbe1 = 2.994803e+008
+ pscbe2 = 1.4554569e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 6.7813161e-005
+ alpha1 = 0
+ beta0 = 50.152925
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_29
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_29
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 8.3464e-009+pmos_v5_agidl_diff_29
+ bgidl = 1.6889e009+pmos_v5_bgidl_diff_29
+ cgidl = 368+pmos_v5_cgidl_diff_29
+ egidl = 0.77897916
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6300+pmos_v5_kt1_diff_29
+ kt2 = -0.019032
+ at = 30000
+ ute = -1.4608
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
30: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.98989+pmos_v5_vth0_diff_30 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.56874
+ k2 = 0.021845+pmos_v5_k2_diff_30
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 116210+pmos_v5_vsat_diff_30
+ ua = 2.5957213e-009+pmos_v5_ua_diff_30
+ ub = 8.9538e-019+pmos_v5_ub_diff_30
+ uc = 0
+ rdsw = 788.47+pmos_v5_rdsw_diff_30
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.023594+pmos_v5_u0_diff_30
+ a0 = 0.92576+pmos_v5_a0_diff_30
+ keta = -0.01712+pmos_v5_keta_diff_30
+ a1 = 0
+ a2 = 0.5
+ ags = 0.19+pmos_v5_ags_diff_30
+ b0 = 0+pmos_v5_b0_diff_30
+ b1 = 0+pmos_v5_b1_diff_30
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.12041324+pmos_v5_voff_diff_30 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2+pmos_v5_nfactor_diff_30 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_30
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.1438+pmos_v5_eta0_diff_30
+ etab = -0.015108
+ dsub = 0.29315
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.60569082+pmos_v5_pclm_diff_30
+ pdiblc1 = 0.1893326
+ pdiblc2 = 0.003828528
+ pdiblcb = -0.225
+ drout = 1
+ pscbe1 = 3.6834658e+008
+ pscbe2 = 1.4543145e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_30
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_30
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 7.1796e-009+pmos_v5_agidl_diff_30
+ bgidl = 1.2201e009+pmos_v5_bgidl_diff_30
+ cgidl = 468.55+pmos_v5_cgidl_diff_30
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.5650+pmos_v5_kt1_diff_30
+ kt2 = -0.019032
+ at = 150800
+ ute = -1.4000
+ ua1 = 5.524e-010
+ ub1 = -3.6627e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
31: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.99467+pmos_v5_vth0_diff_31 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58606
+ k2 = 0.019966+pmos_v5_k2_diff_31
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 100010+pmos_v5_vsat_diff_31
+ ua = 2.9651633e-009+pmos_v5_ua_diff_31
+ ub = 2.244e-019+pmos_v5_ub_diff_31
+ uc = -2.8099e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_31
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.024036+pmos_v5_u0_diff_31
+ a0 = 0.8749+pmos_v5_a0_diff_31
+ keta = -0.010964+pmos_v5_keta_diff_31
+ a1 = 0
+ a2 = 0.5
+ ags = 0.15682+pmos_v5_ags_diff_31
+ b0 = 0+pmos_v5_b0_diff_31
+ b1 = 0+pmos_v5_b1_diff_31
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.091596347+pmos_v5_voff_diff_31 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 0.8+pmos_v5_nfactor_diff_31 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_31
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_31
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.83237107+pmos_v5_pclm_diff_31
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 1e+008
+ pscbe2 = 4.602312e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.2543089e-005
+ alpha1 = 0
+ beta0 = 37.371509
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_31
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_31
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 8.2118e-009+pmos_v5_agidl_diff_31
+ bgidl = 1.9363e009+pmos_v5_bgidl_diff_31
+ cgidl = 462+pmos_v5_cgidl_diff_31
+ egidl = 0.16572358
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.566+pmos_v5_kt1_diff_31
+ kt2 = -0.019032
+ at = 181310
+ ute = -1.5561
+ ua1 = 2.2096e-011
+ ub1 = -3.6920e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
32: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.995e-06 lmax = 8.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -1+pmos_v5_vth0_diff_32 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59521
+ k2 = 0.019927+pmos_v5_k2_diff_32
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 200000+pmos_v5_vsat_diff_32
+ ua = 2.7044348e-009+pmos_v5_ua_diff_32
+ ub = 3.9379e-019+pmos_v5_ub_diff_32
+ uc = -3.9972e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_32
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.0229+pmos_v5_u0_diff_32
+ a0 = 0.89552+pmos_v5_a0_diff_32
+ keta = -0.0079259+pmos_v5_keta_diff_32
+ a1 = 0
+ a2 = 0.5
+ ags = 0.1318+pmos_v5_ags_diff_32
+ b0 = 0+pmos_v5_b0_diff_32
+ b1 = 0+pmos_v5_b1_diff_32
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.093204657+pmos_v5_voff_diff_32 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0849+pmos_v5_nfactor_diff_32 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_32
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_32
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.08353125+pmos_v5_pclm_diff_32
+ pdiblc1 = 0.39
+ pdiblc2 = 0.0029407877
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 3.3371283e+008
+ pscbe2 = 1.5000958e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 5.0667189e-005
+ alpha1 = 0
+ beta0 = 38.266046
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_32
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_32
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 7.3657e-009+pmos_v5_agidl_diff_32
+ bgidl = 1.7047e009+pmos_v5_bgidl_diff_32
+ cgidl = 700+pmos_v5_cgidl_diff_32
+ egidl = 0.69350825
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.57573+pmos_v5_kt1_diff_32
+ kt2 = -0.019032
+ at = 430000
+ ute = -1.3864
+ ua1 = 7.0656e-010
+ ub1 = -3.145e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
33: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.9675+pmos_v5_vth0_diff_33 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59804
+ k2 = 0.024041+pmos_v5_k2_diff_33
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 67000+pmos_v5_vsat_diff_33
+ ua = 2.1590772e-009+pmos_v5_ua_diff_33
+ ub = 9.5539e-019+pmos_v5_ub_diff_33
+ uc = -5.2815e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_33
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.021377+pmos_v5_u0_diff_33
+ a0 = 0.95964+pmos_v5_a0_diff_33
+ keta = -0.08587+pmos_v5_keta_diff_33
+ a1 = 0
+ a2 = 0.5
+ ags = 1.25+pmos_v5_ags_diff_33
+ b0 = 0+pmos_v5_b0_diff_33
+ b1 = 0+pmos_v5_b1_diff_33
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10153677+pmos_v5_voff_diff_33 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.1999+pmos_v5_nfactor_diff_33 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_33
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.080055+pmos_v5_eta0_diff_33
+ etab = -0.0038503
+ dsub = 0.27967
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.3366321+pmos_v5_pclm_diff_33
+ pdiblc1 = 0.29403034
+ pdiblc2 = 0.0048008826
+ pdiblcb = -0.025
+ drout = 0.89960455
+ pscbe1 = 3.6263996e+008
+ pscbe2 = 1.448673e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 9.713535e-005
+ alpha1 = 0
+ beta0 = 54.684511
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_33
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_33
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.02e-008+pmos_v5_agidl_diff_33
+ bgidl = 1.5572e009+pmos_v5_bgidl_diff_33
+ cgidl = 174+pmos_v5_cgidl_diff_33
+ egidl = 0.66526877
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.60348+pmos_v5_kt1_diff_33
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.3724
+ ua1 = 5.52e-010
+ ub1 = -2.16e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
34: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.95e-07 lmax = 8.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.949+pmos_v5_vth0_diff_34 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57633
+ k2 = 0.025668+pmos_v5_k2_diff_34
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 61200+pmos_v5_vsat_diff_34
+ ua = 2.3466113e-009+pmos_v5_ua_diff_34
+ ub = 7.4804e-019+pmos_v5_ub_diff_34
+ uc = -2.4658e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_34
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.022+pmos_v5_u0_diff_34
+ a0 = 0.84351+pmos_v5_a0_diff_34
+ keta = -0.06519+pmos_v5_keta_diff_34
+ a1 = 0
+ a2 = 0.5
+ ags = 0.72112+pmos_v5_ags_diff_34
+ b0 = 0+pmos_v5_b0_diff_34
+ b1 = 0+pmos_v5_b1_diff_34
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.072821331+pmos_v5_voff_diff_34 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.495+pmos_v5_nfactor_diff_34 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_34
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 5.6926e-005+pmos_v5_eta0_diff_34
+ etab = -0.00021277
+ dsub = 0.27482
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.97220765+pmos_v5_pclm_diff_34
+ pdiblc1 = 0.45695731
+ pdiblc2 = 0.011410926
+ pdiblcb = -0.025
+ drout = 0.43179535
+ pscbe1 = 4e+008
+ pscbe2 = 1.3503615e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.7240171e-005
+ alpha1 = 0
+ beta0 = 45.34673
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_34
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_34
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.136e-008+pmos_v5_agidl_diff_34
+ bgidl = 1.8073e009+pmos_v5_bgidl_diff_34
+ cgidl = 520+pmos_v5_cgidl_diff_34
+ egidl = 0.48103697
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6435+pmos_v5_kt1_diff_34
+ kt2 = -0.019032
+ at = 25000
+ ute = -1.4798
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.41e-06
+ sbref = 2.41e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
35: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope3/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.90360217+pmos_v5_vth0_diff_35 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.58237463
+ k2 = 0.021666466+pmos_v5_k2_diff_35
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 89566+pmos_v5_vsat_diff_35
+ ua = 1.7625428e-009+pmos_v5_ua_diff_35
+ ub = 5.4082628e-019+pmos_v5_ub_diff_35
+ uc = -4.2959383e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_35
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.018653409+pmos_v5_u0_diff_35
+ a0 = 0.63337751+pmos_v5_a0_diff_35
+ keta = -0.012595257+pmos_v5_keta_diff_35
+ a1 = 0
+ a2 = 0.5
+ ags = 0.128125+pmos_v5_ags_diff_35
+ b0 = 0+pmos_v5_b0_diff_35
+ b1 = 0+pmos_v5_b1_diff_35
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.088381148+pmos_v5_voff_diff_35 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.4655+pmos_v5_nfactor_diff_35 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_35
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.28744+pmos_v5_eta0_diff_35
+ etab = -0.00077252
+ dsub = 0.26831464
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.97281896+pmos_v5_pclm_diff_35
+ pdiblc1 = 0.42058379
+ pdiblc2 = 0.0011725831
+ pdiblcb = -0.025
+ drout = 0.87592071
+ pscbe1 = 3.089798e+008
+ pscbe2 = 1.4883743e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.053402e-005
+ alpha1 = 0
+ beta0 = 40.210566
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_35
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_35
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 5e-008+pmos_v5_agidl_diff_35
+ bgidl = 1.7848738e009+pmos_v5_bgidl_diff_35
+ cgidl = 1000+pmos_v5_cgidl_diff_35
+ egidl = 0.76372321
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6400+pmos_v5_kt1_diff_35
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.4498
+ ua1 = 5.524e-010
+ ub1 = -2.8959e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
36: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.9995e-05 lmax = 2.0005e-05 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.95807+pmos_v5_vth0_diff_36 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.60281
+ k2 = 0.018238228+pmos_v5_k2_diff_36
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 26719+pmos_v5_vsat_diff_36
+ ua = 1.5847414e-009+pmos_v5_ua_diff_36
+ ub = 7.8391e-019+pmos_v5_ub_diff_36
+ uc = -4.1711723e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_36
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.018506+pmos_v5_u0_diff_36
+ a0 = 0.90435+pmos_v5_a0_diff_36
+ keta = -0.0042037+pmos_v5_keta_diff_36
+ a1 = 0
+ a2 = 0.5
+ ags = 0.10781371+pmos_v5_ags_diff_36
+ b0 = 0+pmos_v5_b0_diff_36
+ b1 = 0+pmos_v5_b1_diff_36
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.12217944+pmos_v5_voff_diff_36 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 0.8+pmos_v5_nfactor_diff_36 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_36
+ cit = 9.1876579e-008
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_36
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.08353125+pmos_v5_pclm_diff_36
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.25e+008
+ pscbe2 = 1.5e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_36
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_36
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1e-008+pmos_v5_agidl_diff_36
+ bgidl = 1.2463e009+pmos_v5_bgidl_diff_36
+ cgidl = 1400+pmos_v5_cgidl_diff_36
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.55573+pmos_v5_kt1_diff_36
+ kt2 = -0.019032
+ at = 46800
+ ute = -1.4448
+ ua1 = 7.0656e-010
+ ub1 = -3.145e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
37: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.95955+pmos_v5_vth0_diff_37 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59139
+ k2 = 0.019352451+pmos_v5_k2_diff_37
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 130850+pmos_v5_vsat_diff_37
+ ua = 1.9590891e-009+pmos_v5_ua_diff_37
+ ub = 5.3943007e-019+pmos_v5_ub_diff_37
+ uc = -1.1497139e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_37
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020158+pmos_v5_u0_diff_37
+ a0 = 0.88+pmos_v5_a0_diff_37
+ keta = -0.009+pmos_v5_keta_diff_37
+ a1 = 0
+ a2 = 0.5
+ ags = 0.10+pmos_v5_ags_diff_37
+ b0 = 0+pmos_v5_b0_diff_37
+ b1 = 0+pmos_v5_b1_diff_37
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10401589+pmos_v5_voff_diff_37 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0056+pmos_v5_nfactor_diff_37 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_37
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.49+pmos_v5_eta0_diff_37
+ etab = -1.0565
+ dsub = 0.26
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.8727984+pmos_v5_pclm_diff_37
+ pdiblc1 = 0.58340637
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.31028214
+ pscbe1 = 2.9284027e+008
+ pscbe2 = 1.4741685e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 5.7693836e-006
+ alpha1 = 0
+ beta0 = 35.270704
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_37
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_37
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 6.86e-008+pmos_v5_agidl_diff_37
+ bgidl = 1.5689515e009+pmos_v5_bgidl_diff_37
+ cgidl = 1152+pmos_v5_cgidl_diff_37
+ egidl = 1.4760927
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.588+pmos_v5_kt1_diff_37
+ kt2 = -0.019032
+ at = 184000
+ ute = -1.35
+ ua1 = 5.524e-010
+ ub1 = -3.2036e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
38: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.96107+pmos_v5_vth0_diff_38 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.59047
+ k2 = 0.018746757+pmos_v5_k2_diff_38
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 120230+pmos_v5_vsat_diff_38
+ ua = 2.1146882e-009+pmos_v5_ua_diff_38
+ ub = 2.5096855e-019+pmos_v5_ub_diff_38
+ uc = -2.7456539e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_38
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020131+pmos_v5_u0_diff_38
+ a0 = 0.81+pmos_v5_a0_diff_38
+ keta = -0.0050598+pmos_v5_keta_diff_38
+ a1 = 0
+ a2 = 0.5
+ ags = 0.11483891+pmos_v5_ags_diff_38
+ b0 = 0+pmos_v5_b0_diff_38
+ b1 = 0+pmos_v5_b1_diff_38
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10968052+pmos_v5_voff_diff_38 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.005+pmos_v5_nfactor_diff_38 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_38
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_38
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2961212+pmos_v5_pclm_diff_38
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.2500144e+008
+ pscbe2 = 1.5000011e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 2.206037e-005
+ alpha1 = 0
+ beta0 = 36.963614
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_38
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_38
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 6.37e-008+pmos_v5_agidl_diff_38
+ bgidl = 1.5860386e009+pmos_v5_bgidl_diff_38
+ cgidl = 1200+pmos_v5_cgidl_diff_38
+ egidl = 1.3291649
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.566+pmos_v5_kt1_diff_38
+ kt2 = -0.019032
+ at = 219650
+ ute = -1.4424
+ ua1 = 2.2096e-011
+ ub1 = -2.3998e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
39: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.9723+pmos_v5_vth0_diff_39 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.55533
+ k2 = 0.030745+pmos_v5_k2_diff_39
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 80156+pmos_v5_vsat_diff_39
+ ua = 2.2137527e-009+pmos_v5_ua_diff_39
+ ub = 2.7518e-019+pmos_v5_ub_diff_39
+ uc = -3.1546e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_39
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020541+pmos_v5_u0_diff_39
+ a0 = 0.88+pmos_v5_a0_diff_39
+ keta = -0.0051528+pmos_v5_keta_diff_39
+ a1 = 0
+ a2 = 0.5
+ ags = 0.11911+pmos_v5_ags_diff_39
+ b0 = 0+pmos_v5_b0_diff_39
+ b1 = 0+pmos_v5_b1_diff_39
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.12715703+pmos_v5_voff_diff_39 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.134+pmos_v5_nfactor_diff_39 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_39
+ cit = 2.5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_39
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.083531+pmos_v5_pclm_diff_39
+ pdiblc1 = 0.39
+ pdiblc2 = 0.0056422857
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.25e+008
+ pscbe2 = 1.5e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_39
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_39
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 7e-008+pmos_v5_agidl_diff_39
+ bgidl = 1.3e009+pmos_v5_bgidl_diff_39
+ cgidl = 1485+pmos_v5_cgidl_diff_39
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.546+pmos_v5_kt1_diff_39
+ kt2 = -0.019032
+ at = 151090
+ ute = -1.5561
+ ua1 = 2.2096e-011
+ ub1 = -3.0767e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
40: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.93514+pmos_v5_vth0_diff_40 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.5044
+ k2 = 0.047795+pmos_v5_k2_diff_40
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 96000+pmos_v5_vsat_diff_40
+ ua = 2.520839e-009+pmos_v5_ua_diff_40
+ ub = -3.95e-021+pmos_v5_ub_diff_40
+ uc = -7.0465e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_40
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020095+pmos_v5_u0_diff_40
+ a0 = 0.023438+pmos_v5_a0_diff_40
+ keta = -0.0087101+pmos_v5_keta_diff_40
+ a1 = 0
+ a2 = 0.5
+ ags = 0.024023+pmos_v5_ags_diff_40
+ b0 = 0+pmos_v5_b0_diff_40
+ b1 = 0+pmos_v5_b1_diff_40
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.08150653+pmos_v5_voff_diff_40 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.8602+pmos_v5_nfactor_diff_40 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_40
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.0042715+pmos_v5_eta0_diff_40
+ etab = -0.021343
+ dsub = 0.27992
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.0922+pmos_v5_pclm_diff_40
+ pdiblc1 = 0.38852895
+ pdiblc2 = 0.0069782586
+ pdiblcb = -0.025
+ drout = 0.82656681
+ pscbe1 = 3.6230113e+008
+ pscbe2 = 1.4700248e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.0979853e-005
+ alpha1 = 0
+ beta0 = 43.428559
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_40
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_40
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 4.144e-008+pmos_v5_agidl_diff_40
+ bgidl = 1.671e009+pmos_v5_bgidl_diff_40
+ cgidl = 767.95+pmos_v5_cgidl_diff_40
+ egidl = 1.1526517
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.64948+pmos_v5_kt1_diff_40
+ kt2 = -0.019032
+ at = 18000
+ ute = -1.3624
+ ua1 = 5.52e-010
+ ub1 = -2.894e-018
+ uc1 = -4.1496e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
41: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.90453619+pmos_v5_vth0_diff_41 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.53447619
+ k2 = 0.039396842+pmos_v5_k2_diff_41
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 85096.792+pmos_v5_vsat_diff_41
+ ua = 1.173516e-009+pmos_v5_ua_diff_41
+ ub = 1.222731e-018+pmos_v5_ub_diff_41
+ uc = -4.6607993e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_41
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.016303299+pmos_v5_u0_diff_41
+ a0 = 0.63343726+pmos_v5_a0_diff_41
+ keta = -0.019041557+pmos_v5_keta_diff_41
+ a1 = 0
+ a2 = 0.5
+ ags = 0.43242187+pmos_v5_ags_diff_41
+ b0 = 0+pmos_v5_b0_diff_41
+ b1 = 0+pmos_v5_b1_diff_41
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.11136124+pmos_v5_voff_diff_41 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3719842+pmos_v5_nfactor_diff_41 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_41
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.094454882+pmos_v5_eta0_diff_41
+ etab = -0.035896073
+ dsub = 0.29420499
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.0997509+pmos_v5_pclm_diff_41
+ pdiblc1 = 0.35412617
+ pdiblc2 = 0.0032399298
+ pdiblcb = -0.025
+ drout = 0.71796338
+ pscbe1 = 3.8500909e+008
+ pscbe2 = 1.3804759e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.9848596e-005
+ alpha1 = 0
+ beta0 = 45.089194
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_41
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_41
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 8e-008+pmos_v5_agidl_diff_41
+ bgidl = 1.5810321e009+pmos_v5_bgidl_diff_41
+ cgidl = 1908.2+pmos_v5_cgidl_diff_41
+ egidl = 1.3390402
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.60348+pmos_v5_kt1_diff_41
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.2412
+ ua1 = 5.52e-010
+ ub1 = -1.8696e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.02e-06
+ sbref = 2.01e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
42: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.9264+pmos_v5_vth0_diff_42 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.52566309
+ k2 = 0.035643+pmos_v5_k2_diff_42
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 77067+pmos_v5_vsat_diff_42
+ ua = 1.5643566e-009+pmos_v5_ua_diff_42
+ ub = 6.5919e-019+pmos_v5_ub_diff_42
+ uc = -4.3553868e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_42
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.018908+pmos_v5_u0_diff_42
+ a0 = 0.76528248+pmos_v5_a0_diff_42
+ keta = -0.029626108+pmos_v5_keta_diff_42
+ a1 = 0
+ a2 = 0.5
+ ags = 0.40595436+pmos_v5_ags_diff_42
+ b0 = 0+pmos_v5_b0_diff_42
+ b1 = 0+pmos_v5_b1_diff_42
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.11007505+pmos_v5_voff_diff_42 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.3820472+pmos_v5_nfactor_diff_42 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_42
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.49+pmos_v5_eta0_diff_42
+ etab = -6.25e-006
+ dsub = 0.46919791
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.99477438+pmos_v5_pclm_diff_42
+ pdiblc1 = 0.40166422
+ pdiblc2 = 0.0064917125
+ pdiblcb = -0.025
+ drout = 0.51082388
+ pscbe1 = 3.0891221e+008
+ pscbe2 = 1.4440738e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_42
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_42
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 6.824e-007+pmos_v5_agidl_diff_42
+ bgidl = 1.5947033e009+pmos_v5_bgidl_diff_42
+ cgidl = 5748.2+pmos_v5_cgidl_diff_42
+ egidl = 2
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6175+pmos_v5_kt1_diff_42
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.4798
+ ua1 = 5.524e-010
+ ub1 = -2.8959e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.41e-06
+ sbref = 2.41e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
43: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 9.95e-07 lmax = 1.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.88639+pmos_v5_vth0_diff_43 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.55984
+ k2 = 0.026386144+pmos_v5_k2_diff_43
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 69528+pmos_v5_vsat_diff_43
+ ua = 2.0341039e-009+pmos_v5_ua_diff_43
+ ub = 5.878e-019+pmos_v5_ub_diff_43
+ uc = -2.7970035e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_43
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.018442+pmos_v5_u0_diff_43
+ a0 = 0.73934+pmos_v5_a0_diff_43
+ keta = -0.032622+pmos_v5_keta_diff_43
+ a1 = 0
+ a2 = 0.5
+ ags = 0.43242187+pmos_v5_ags_diff_43
+ b0 = 0+pmos_v5_b0_diff_43
+ b1 = 0+pmos_v5_b1_diff_43
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.075734118+pmos_v5_voff_diff_43 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.5401+pmos_v5_nfactor_diff_43 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_43
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.036111+pmos_v5_eta0_diff_43
+ etab = -0.0043407
+ dsub = 0.31595571
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.1707598+pmos_v5_pclm_diff_43
+ pdiblc1 = 0.54661982
+ pdiblc2 = 0.0020306546
+ pdiblcb = -0.025
+ drout = 0.42584153
+ pscbe1 = 2.7813655e+008
+ pscbe2 = 1.4513967e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_43
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_43
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.056e-010+pmos_v5_agidl_diff_43
+ bgidl = 1.0285e009+pmos_v5_bgidl_diff_43
+ cgidl = 994.06+pmos_v5_cgidl_diff_43
+ egidl = 0.90967406
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6480+pmos_v5_kt1_diff_43
+ kt2 = -0.019032
+ at = 30000
+ ute = -1.4498
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.81e-06
+ sbref = 2.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
44: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 1.995e-06 lmax = 2.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.904+pmos_v5_vth0_diff_44 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.55984
+ k2 = 0.026386144+pmos_v5_k2_diff_44
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 38200+pmos_v5_vsat_diff_44
+ ua = 2.0341039e-009+pmos_v5_ua_diff_44
+ ub = 6.4658e-019+pmos_v5_ub_diff_44
+ uc = -2.7970035e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_44
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.01918+pmos_v5_u0_diff_44
+ a0 = 0.73934+pmos_v5_a0_diff_44
+ keta = -0.037189+pmos_v5_keta_diff_44
+ a1 = 0
+ a2 = 0.5
+ ags = 0.43242187+pmos_v5_ags_diff_44
+ b0 = 0+pmos_v5_b0_diff_44
+ b1 = 0+pmos_v5_b1_diff_44
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.075734118+pmos_v5_voff_diff_44 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.5401+pmos_v5_nfactor_diff_44 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_44
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.06+pmos_v5_eta0_diff_44
+ etab = 0
+ dsub = 0.31595571
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.1707598+pmos_v5_pclm_diff_44
+ pdiblc1 = 0.54661982
+ pdiblc2 = 0.0020306546
+ pdiblcb = -0.025
+ drout = 0.42584153
+ pscbe1 = 2.7813655e+008
+ pscbe2 = 1.4513967e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_44
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_44
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 1.056e-010+pmos_v5_agidl_diff_44
+ bgidl = 1.0285e009+pmos_v5_bgidl_diff_44
+ cgidl = 1670+pmos_v5_cgidl_diff_44
+ egidl = 0.90967406
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6480+pmos_v5_kt1_diff_44
+ kt2 = -0.019032
+ at = 34800
+ ute = -1.4498
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
45: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 3.995e-06 lmax = 4.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.93527+pmos_v5_vth0_diff_45 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57102
+ k2 = 0.023085+pmos_v5_k2_diff_45
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 180350+pmos_v5_vsat_diff_45
+ ua = 2.334849e-009+pmos_v5_ua_diff_45
+ ub = 3.4026e-019+pmos_v5_ub_diff_45
+ uc = -3.2639e-011
+ rdsw = 788.47+pmos_v5_rdsw_diff_45
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.020132+pmos_v5_u0_diff_45
+ a0 = 0.87668+pmos_v5_a0_diff_45
+ keta = -0.0076977+pmos_v5_keta_diff_45
+ a1 = 0
+ a2 = 0.5
+ ags = 0.1244+pmos_v5_ags_diff_45
+ b0 = 0+pmos_v5_b0_diff_45
+ b1 = 0+pmos_v5_b1_diff_45
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10903374+pmos_v5_voff_diff_45 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.0655+pmos_v5_nfactor_diff_45 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_45
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.08+pmos_v5_eta0_diff_45
+ etab = -0.07
+ dsub = 0.56
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 0.99495+pmos_v5_pclm_diff_45
+ pdiblc1 = 0.39
+ pdiblc2 = 0.00129
+ pdiblcb = -0.025
+ drout = 0.56
+ pscbe1 = 2.2560035e+008
+ pscbe2 = 1.4994384e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.8978653e-005
+ alpha1 = 0
+ beta0 = 37.686511
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_45
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_45
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 3.08e-008+pmos_v5_agidl_diff_45
+ bgidl = 1.7019e009+pmos_v5_bgidl_diff_45
+ cgidl = 1200+pmos_v5_cgidl_diff_45
+ egidl = 1.0890786
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.566+pmos_v5_kt1_diff_45
+ kt2 = -0.019032
+ at = 351440
+ ute = -1.4104
+ ua1 = 2.2096e-011
+ ub1 = -2.3998e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 3.0e-06
+ sbref = 3.0e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
46: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.45e-07 wmax = 7.55e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope1/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.92036+pmos_v5_vth0_diff_46 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.53224
+ k2 = 0.046095+pmos_v5_k2_diff_46
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 80727+pmos_v5_vsat_diff_46
+ ua = 1.8760013e-009+pmos_v5_ua_diff_46
+ ub = 1.0003e-018+pmos_v5_ub_diff_46
+ uc = -5.0888e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_46
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.017891+pmos_v5_u0_diff_46
+ a0 = 0.68242+pmos_v5_a0_diff_46
+ keta = -0.04781+pmos_v5_keta_diff_46
+ a1 = 0
+ a2 = 0.5
+ ags = 0.98885+pmos_v5_ags_diff_46
+ b0 = 0+pmos_v5_b0_diff_46
+ b1 = 0+pmos_v5_b1_diff_46
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.099269478+pmos_v5_voff_diff_46 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.7634+pmos_v5_nfactor_diff_46 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_46
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.068197+pmos_v5_eta0_diff_46
+ etab = -0.0043723
+ dsub = 0.26967
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.0392+pmos_v5_pclm_diff_46
+ pdiblc1 = 0.18044532
+ pdiblc2 = 0.0037051928
+ pdiblcb = -0.025
+ drout = 1
+ pscbe1 = 4e+008
+ pscbe2 = 1.4741409e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1.9436447e-005
+ alpha1 = 0
+ beta0 = 46.62143
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_46
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_46
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 3.32e-008+pmos_v5_agidl_diff_46
+ bgidl = 1.7842e009+pmos_v5_bgidl_diff_46
+ cgidl = 840+pmos_v5_cgidl_diff_46
+ egidl = 0.92927294
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.64848+pmos_v5_kt1_diff_46
+ kt2 = -0.019032
+ at = 5000
+ ute = -1.3696
+ ua1 = 5.52e-010
+ ub1 = -2.6784e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 1.81e-06
+ sbref = 1.81e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
47: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.95e-07 lmax = 8.05e-07 wmin = 7.45e-07 wmax = 7.55e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.88639+pmos_v5_vth0_diff_47 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.55984
+ k2 = 0.026386144+pmos_v5_k2_diff_47
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 75574+pmos_v5_vsat_diff_47
+ ua = 2.0341039e-009+pmos_v5_ua_diff_47
+ ub = 5.878e-019+pmos_v5_ub_diff_47
+ uc = -2.7970035e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_47
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.019002+pmos_v5_u0_diff_47
+ a0 = 0.73934+pmos_v5_a0_diff_47
+ keta = -0.032622+pmos_v5_keta_diff_47
+ a1 = 0
+ a2 = 0.5
+ ags = 0.43242187+pmos_v5_ags_diff_47
+ b0 = 0+pmos_v5_b0_diff_47
+ b1 = 0+pmos_v5_b1_diff_47
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.075734118+pmos_v5_voff_diff_47 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.5401+pmos_v5_nfactor_diff_47 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_47
+ cit = 1e-005
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.036111+pmos_v5_eta0_diff_47
+ etab = -0.0043407
+ dsub = 0.31595571
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.1707598+pmos_v5_pclm_diff_47
+ pdiblc1 = 0.54661982
+ pdiblc2 = 0.0020306546
+ pdiblcb = -0.025
+ drout = 0.42584153
+ pscbe1 = 2.7813655e+008
+ pscbe2 = 1.4513967e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 1e-010
+ alpha1 = 1e-010
+ beta0 = 3
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_47
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_47
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 2.4e-010+pmos_v5_agidl_diff_47
+ bgidl = 1.0285e009+pmos_v5_bgidl_diff_47
+ cgidl = 994.06+pmos_v5_cgidl_diff_47
+ egidl = 0.90967406
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.6475+pmos_v5_kt1_diff_47
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.4798
+ ua1 = 5.524e-010
+ ub1 = -3.5909e-018
+ uc1 = -1.092e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.41e-06
+ sbref = 2.41e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
48: type=p
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.175e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 4.5375e-008+pmos_v5_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 1.2277e-008+pmos_v5_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = -4.7338e-009
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.577
+ rnoib = 0.37
+ tnoia = 1.5
+ tnoib = 3.5
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.175e-008*pmos_v5_toxe_mult + pmos_v5_toxe_slope_spectre*(1.175e-08*pmos_v5_toxe_mult*(pmos_v5_toxe_slope3/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*pmos_v5_rshp_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.87115+pmos_v5_vth0_diff_48 + pmos_v5_vth0_slope_spectre*(pmos_v5_vth0_slope/sqrt(l*w*m))
+ k1 = 0.57069
+ k2 = 0.030351152+pmos_v5_k2_diff_48
+ k3 = -2.2405
+ dvt0 = 4.657
+ dvt1 = 0.34864
+ dvt2 = -0.030206
+ dvt0w = -2.2
+ dvt1w = 1016300
+ dvt2w = 0
+ w0 = 0
+ k3b = -0.172
// NEW BSIM4 Parameters for Level 54
+ phin = 0
+ lpe0 = 0
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 68461+pmos_v5_vsat_diff_48
+ ua = 9.5685789e-010+pmos_v5_ua_diff_48
+ ub = 1.6857e-018+pmos_v5_ub_diff_48
+ uc = -2.8451032e-012
+ rdsw = 788.47+pmos_v5_rdsw_diff_48
+ prwb = 0.053538
+ prwg = 0
+ wr = 1
+ u0 = 0.015405+pmos_v5_u0_diff_48
+ a0 = 0.81031+pmos_v5_a0_diff_48
+ keta = -0.073162+pmos_v5_keta_diff_48
+ a1 = 0
+ a2 = 0.5
+ ags = 0.9538163+pmos_v5_ags_diff_48
+ b0 = 0+pmos_v5_b0_diff_48
+ b1 = 0+pmos_v5_b1_diff_48
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.10729755+pmos_v5_voff_diff_48 + pmos_v5_voff_slope_spectre*(pmos_v5_voff_slope/sqrt(l*w*m))
+ nfactor = 1.2484+pmos_v5_nfactor_diff_48 + pmos_v5_nfactor_slope_spectre*(pmos_v5_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+pmos_v5_tvoff_diff_48
+ cit = 5e-006
+ cdsc = 0
+ cdscb = 0
+ cdscd = 0
+ eta0 = 0.020883+pmos_v5_eta0_diff_48
+ etab = 0
+ dsub = 0.29051085
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = 0
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 1.2193396+pmos_v5_pclm_diff_48
+ pdiblc1 = 0.59952915
+ pdiblc2 = 0.0045454479
+ pdiblcb = -0.025
+ drout = 0.99912731
+ pscbe1 = 4e+008
+ pscbe2 = 1.4479847e-008
+ pvag = 0
+ delta = 0.01
+ alpha0 = 3.4267536e-005
+ alpha1 = 0
+ beta0 = 49.499633
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 0
+ pdits = 0+pmos_v5_pdits_diff_48
+ pditsl = 0
+ pditsd = 0+pmos_v5_pditsd_diff_48
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 2.91e-008+pmos_v5_agidl_diff_48
+ bgidl = 1.7407e009+pmos_v5_bgidl_diff_48
+ cgidl = 800+pmos_v5_cgidl_diff_48
+ egidl = 0.95326514
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.175e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.60348+pmos_v5_kt1_diff_48
+ kt2 = -0.019032
+ at = 10000
+ ute = -1.3412
+ ua1 = 5.52e-010
+ ub1 = -1.8696e-018
+ uc1 = -3.7128e-011
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 3.0000000E+40
+ noib = 8.5300000E+24
+ noic = 8.4000000E+07
+ em = 4.1000000E+07
+ af = 1
+ ef = 0.88
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.3632
+ jss = 2.1483e-05
+ jsws = 4.02e-12
+ xtis = 10
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.001671
+ tpbsw = 0
+ tpbswg = 0
+ tcj = 0.00096
+ tcjsw = 3e-005
+ tcjswg = 0
+ cgdo = 1.9771e-010*pmos_v5_overlap_mult
+ cgso = 1.9771e-010*pmos_v5_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 1.0005e-011*pmos_v5_overlap_mult
+ cgdl = 1.0005e-011*pmos_v5_overlap_mult
+ cf = 1.2e-011
+ clc = 1e-007
+ cle = 0.6
+ dlc = 4.4983e-008+pmos_v5_dlc_diff+pmos_v5_dlc_rotweak
+ dwc = 0+pmos_v5_dwc_diff
+ vfbcv = -0.1446893
+ acde = 0.401
+ moin = 15.773
+ noff = 4
+ voffcv = 0
+ ngate = 1e+023
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.00077547*pmos_v5_ajunction_mult
+ mjs = 0.33956
+ pbs = 0.6587
+ cjsws = 9.8717e-011*pmos_v5_pjunction_mult
+ mjsws = 0.24676
+ pbsws = 1
+ cjswgs = 1.46e-010*pmos_v5_pjunction_mult
+ mjswgs = 0.81
+ pbswgs = 3
//
// STRESS PARAMETERS
//
+ saref = 2.02e-06
+ sbref = 2.01e-06
+ wlod = 0+pmos_v5_wlod_diff
+ kvth0 = 0+pmos_v5_kvth0_diff
+ lkvth0 = 0+pmos_v5_lkvth0_diff
+ wkvth0 = 0+pmos_v5_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+pmos_v5_ku0_diff
+ lku0 = 0+pmos_v5_lku0_diff
+ wku0 = 0+pmos_v5_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+pmos_v5_kvsat_diff
+ steta0 = 0
+ tku0 = 0
}
ends pmos_v5
// *****