blob: 74088af1abe96dfe4d5d314fd9ab5e9944114738 [file] [log] [blame]
// 2020/03/09 Suriono
// Why : New S130 models for S130 PDK
// What : Remove "mult" parameter, it is not used anymore.
// Replace "mult" with "m" for matching scale
// ===========================================================
*Auto-converted ../spectremodels_s8x/nmos_nat_v3.pm3 by model_spectre_mismatchmaker.rb
// converted from amsmodels_s8x/nmos_nat_v3.pm3
simulator lang=spectre
// BSIMTran Version 0.1.24, Created on 4-26-2002
// Username: pxg
// Command Line: /home/cydev/v/4.4/bin/lnx86/bsimtran nmos_bsim4.rf nmos -p -nnmos_nat_v3 nmos_nat_v3_bin.pm3 nmos_nat_v3_ov.pm dnsd_pw_nativeiv.pmd dnsd_pw_nativecv.pmd ntvnativ_bsimtranoutput.pm3
// Working Directory: /home/pxg/rams/s8/models.3.1/rev_model/nmos_nat_v3/combined
// Time: Fri May 11 11:50:03 2007
// Rule File: nmos_bsim4.rf
// Output File: ntvnativ_bsimtranoutput.pm3
// Input Files:
// (1) nmos_nat_v3_bin.pm3
// (2) nmos_nat_v3_ov.pm
// (3) dnsd_pw_nativeiv.pmd
// (4) dnsd_pw_nativecv.pmd
// copyright, Cypress Semiconductor, 2002
// BSIM3.V3 NMOS Model
// spectre mismatch params here
//parameters nmos_nat_v3_lint_slope_spectre = 0.0
//parameters nmos_nat_v3_wint_slope_spectre = 0.0
parameters nmos_nat_v3_toxe_slope_spectre = 0.0
parameters nmos_nat_v3_vth0_slope_spectre = 0.0
parameters nmos_nat_v3_voff_slope_spectre = 0.0
parameters nmos_nat_v3_nfactor_slope_spectre = 0.0
statistics {
process {
}
mismatch {
// vary nmos_nat_v3_lint_slope_spectre dist=gauss std = 1.0
// vary nmos_nat_v3_wint_slope_spectre dist=gauss std = 1.0
vary nmos_nat_v3_toxe_slope_spectre dist=gauss std = 1.0
vary nmos_nat_v3_vth0_slope_spectre dist=gauss std = 1.0
vary nmos_nat_v3_voff_slope_spectre dist=gauss std = 1.0
vary nmos_nat_v3_nfactor_slope_spectre dist=gauss std = 1.0
}
}
inline subckt nmos_nat_v3 (d g s b)
parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1
nmos_nat_v3 (d g s b) nmos_nat_v3_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf
model nmos_nat_v3_model bsim4 {
0: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.995e-06 wmax = 1.0005e-05
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.0007337+nmos_nat_v3_vth0_diff_0 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.27
+ k2 = 0+nmos_nat_v3_k2_diff_0
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 116050+nmos_nat_v3_vsat_diff_0
+ ua = 5.1975e-009+nmos_nat_v3_ua_diff_0
+ ub = 5.727e-020+nmos_nat_v3_ub_diff_0
+ uc = 1.3541e-010
+ rdsw = 0+nmos_nat_v3_rdsw_diff_0
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.091551+nmos_nat_v3_u0_diff_0
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_0
+ keta = 0.0070658+nmos_nat_v3_keta_diff_0
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_0
+ b0 = 0+nmos_nat_v3_b0_diff_0
+ b1 = 0+nmos_nat_v3_b1_diff_0
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_0 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 2.0354+nmos_nat_v3_nfactor_diff_0 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_0
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0.017338+nmos_nat_v3_eta0_diff_0
+ etab = 0
+ dsub = 0.59286
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_0
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 6.234e-007
+ alpha1 = 0
+ beta0 = 21.814
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_0
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_0
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.33884+nmos_nat_v3_kt1_diff_0
+ kt2 = 0
+ at = 40500
+ ute = -1.716
+ ua1 = 1e-009
+ ub1 = -1.18e-017
+ uc1 = -3.696e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.745e-06
+ sbref = 1.74e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
1: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.0007337+nmos_nat_v3_vth0_diff_1 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.27
+ k2 = 0+nmos_nat_v3_k2_diff_1
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.018557
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 125130+nmos_nat_v3_vsat_diff_1
+ ua = 4.848e-009+nmos_nat_v3_ua_diff_1
+ ub = 5.727e-020+nmos_nat_v3_ub_diff_1
+ uc = 1.3541e-010
+ rdsw = 0+nmos_nat_v3_rdsw_diff_1
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.087889+nmos_nat_v3_u0_diff_1
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_1
+ keta = 0.019064+nmos_nat_v3_keta_diff_1
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_1
+ b0 = 0+nmos_nat_v3_b0_diff_1
+ b1 = 0+nmos_nat_v3_b1_diff_1
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_1 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 2.0354+nmos_nat_v3_nfactor_diff_1 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_1
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0.0017338+nmos_nat_v3_eta0_diff_1
+ etab = 1e-010
+ dsub = 0.59286
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_1
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 4.8972e-007
+ alpha1 = 0.03
+ beta0 = 20.82
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_1
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_1
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.33884+nmos_nat_v3_kt1_diff_1
+ kt2 = -0.02
+ at = 40500
+ ute = -1.716
+ ua1 = 1e-009
+ ub1 = -1.2744e-017
+ uc1 = -2.5133e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.745e-06
+ sbref = 1.74e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
2: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = 0.068092+nmos_nat_v3_vth0_diff_2 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.33502
+ k2 = 0+nmos_nat_v3_k2_diff_2
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 118050+nmos_nat_v3_vsat_diff_2
+ ua = 4.145e-009+nmos_nat_v3_ua_diff_2
+ ub = 3.7798e-019+nmos_nat_v3_ub_diff_2
+ uc = 1.3541e-010
+ rdsw = 0+nmos_nat_v3_rdsw_diff_2
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.083529+nmos_nat_v3_u0_diff_2
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_2
+ keta = -0.016684+nmos_nat_v3_keta_diff_2
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_2
+ b0 = 0+nmos_nat_v3_b0_diff_2
+ b1 = 0+nmos_nat_v3_b1_diff_2
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_2 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 0.77345+nmos_nat_v3_nfactor_diff_2 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_2
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0+nmos_nat_v3_eta0_diff_2
+ etab = 0
+ dsub = 0.071143
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_2
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 8.3952e-007
+ alpha1 = 0.33
+ beta0 = 23
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_2
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_2
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.29818+nmos_nat_v3_kt1_diff_2
+ kt2 = -0.02
+ at = 37260
+ ute = -1.613
+ ua1 = 1e-009
+ ub1 = -8.411e-018
+ uc1 = -2.5133e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.95e-06
+ sbref = 1.94e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
3: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.995e-06 wmax = 4.005e-06
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.0007337+nmos_nat_v3_vth0_diff_3 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.27
+ k2 = 0+nmos_nat_v3_k2_diff_3
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 118050+nmos_nat_v3_vsat_diff_3
+ ua = 5.05e-009+nmos_nat_v3_ua_diff_3
+ ub = 5.727e-020+nmos_nat_v3_ub_diff_3
+ uc = 1.3541e-010
+ rdsw = 0+nmos_nat_v3_rdsw_diff_3
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.087889+nmos_nat_v3_u0_diff_3
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_3
+ keta = 0.0070658+nmos_nat_v3_keta_diff_3
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_3
+ b0 = 0+nmos_nat_v3_b0_diff_3
+ b1 = 0+nmos_nat_v3_b1_diff_3
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_3 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 2.0354+nmos_nat_v3_nfactor_diff_3 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_3
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0.017338+nmos_nat_v3_eta0_diff_3
+ etab = 0
+ dsub = 0.59286
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_3
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 7.6956e-007
+ alpha1 = 0
+ beta0 = 22.396
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_3
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_3
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.33884+nmos_nat_v3_kt1_diff_3
+ kt2 = -0.02
+ at = 40500
+ ute = -1.716
+ ua1 = 1e-009
+ ub1 = -1.2744e-017
+ uc1 = -2.5133e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.745e-06
+ sbref = 1.74e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
4: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.022934+nmos_nat_v3_vth0_diff_4 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.30326
+ k2 = 0+nmos_nat_v3_k2_diff_4
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 133130+nmos_nat_v3_vsat_diff_4
+ ua = 4.1034e-009+nmos_nat_v3_ua_diff_4
+ ub = 4.971e-020+nmos_nat_v3_ub_diff_4
+ uc = 2.1124e-011
+ rdsw = 0+nmos_nat_v3_rdsw_diff_4
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.084373+nmos_nat_v3_u0_diff_4
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_4
+ keta = 0.030502+nmos_nat_v3_keta_diff_4
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_4
+ b0 = 0+nmos_nat_v3_b0_diff_4
+ b1 = 0+nmos_nat_v3_b1_diff_4
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_4 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 2.0354+nmos_nat_v3_nfactor_diff_4 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_4
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0.00020806+nmos_nat_v3_eta0_diff_4
+ etab = 1e-010
+ dsub = 0.59286
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_4
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 5.4233e-007
+ alpha1 = 0
+ beta0 = 21.174
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_4
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_4
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.35239+nmos_nat_v3_kt1_diff_4
+ kt2 = -0.02
+ at = 40500
+ ute = -1.5444
+ ua1 = 1e-009
+ ub1 = -9.4306e-018
+ uc1 = -1.2064e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.745e-06
+ sbref = 1.74e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
5: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = 0.007535+nmos_nat_v3_vth0_diff_5 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.33965
+ k2 = 0+nmos_nat_v3_k2_diff_5
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 127800+nmos_nat_v3_vsat_diff_5
+ ua = 3.7751e-009+nmos_nat_v3_ua_diff_5
+ ub = 4.4739e-020+nmos_nat_v3_ub_diff_5
+ uc = 6.2248e-011
+ rdsw = 0+nmos_nat_v3_rdsw_diff_5
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.079311+nmos_nat_v3_u0_diff_5
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_5
+ keta = 0.0018301+nmos_nat_v3_keta_diff_5
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_5
+ b0 = 0+nmos_nat_v3_b0_diff_5
+ b1 = 0+nmos_nat_v3_b1_diff_5
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_5 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 2.0354+nmos_nat_v3_nfactor_diff_5 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_5
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0.00020806+nmos_nat_v3_eta0_diff_5
+ etab = 1e-010
+ dsub = 0.59286
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_5
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 5.3596e-007
+ alpha1 = 0
+ beta0 = 21.074
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_5
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_5
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.33884+nmos_nat_v3_kt1_diff_5
+ kt2 = -0.02
+ at = 40500
+ ute = -1.5444
+ ua1 = 1e-009
+ ub1 = -8.6659e-018
+ uc1 = -2.5133e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.95e-06
+ sbref = 1.94e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
6: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = 0.071092+nmos_nat_v3_vth0_diff_6 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.40202
+ k2 = 0+nmos_nat_v3_k2_diff_6
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 117770+nmos_nat_v3_vsat_diff_6
+ ua = 2.9844e-009+nmos_nat_v3_ua_diff_6
+ ub = 3.7798e-019+nmos_nat_v3_ub_diff_6
+ uc = 7.3121e-011
+ rdsw = 0+nmos_nat_v3_rdsw_diff_6
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.073506+nmos_nat_v3_u0_diff_6
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_6
+ keta = 0+nmos_nat_v3_keta_diff_6
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_6
+ b0 = 0+nmos_nat_v3_b0_diff_6
+ b1 = 0+nmos_nat_v3_b1_diff_6
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_6 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 0.77345+nmos_nat_v3_nfactor_diff_6 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_6
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0+nmos_nat_v3_eta0_diff_6
+ etab = 0
+ dsub = 0.071143
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_6
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 8.5632e-007
+ alpha1 = 0.09
+ beta0 = 21.989
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_6
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_6
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.30496+nmos_nat_v3_kt1_diff_6
+ kt2 = -0.02
+ at = 28350
+ ute = -1.613
+ ua1 = 1e-009
+ ub1 = -6.8818e-018
+ uc1 = -1.3069e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 2.34e-06
+ sbref = 2.34e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
7: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 4.95e-07 lmax = 5.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = -0.011467+nmos_nat_v3_vth0_diff_7 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.2808
+ k2 = 0+nmos_nat_v3_k2_diff_7
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 128010+nmos_nat_v3_vsat_diff_7
+ ua = 4.4602e-009+nmos_nat_v3_ua_diff_7
+ ub = 8.0178e-020+nmos_nat_v3_ub_diff_7
+ uc = 7.0413e-011
+ rdsw = 0+nmos_nat_v3_rdsw_diff_7
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.084373+nmos_nat_v3_u0_diff_7
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_7
+ keta = 0.019064+nmos_nat_v3_keta_diff_7
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_7
+ b0 = 0+nmos_nat_v3_b0_diff_7
+ b1 = 0+nmos_nat_v3_b1_diff_7
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_7 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 2.0354+nmos_nat_v3_nfactor_diff_7 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_7
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0.00020806+nmos_nat_v3_eta0_diff_7
+ etab = 1e-010
+ dsub = 0.59286
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_7
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 3.9877e-007
+ alpha1 = 0.15
+ beta0 = 20.36
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_7
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_7
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.34562+nmos_nat_v3_kt1_diff_7
+ kt2 = -0.02
+ at = 40500
+ ute = -1.613
+ ua1 = 1e-009
+ ub1 = -1.1724e-017
+ uc1 = -2.5133e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.745e-06
+ sbref = 1.74e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
// *****
8: type=n
//
// DC IV MOS PARAMETERS
//
+ lmin = 5.95e-07 lmax = 6.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+ level = 54
+ tnom = 30
+ version = 4.5
+ toxm = 1.16e-008
+ xj = 1.5e-007
+ lln = 1
+ lwn = 1
+ wln = 1
+ wwn = 1
+ lint = 0+nmos_nat_v3_lint_diff
+ ll = 0
+ lw = 0
+ lwl = 0
+ wint = 0+nmos_nat_v3_wint_diff
+ wl = 0
+ ww = 0
+ wwl = 0
+ xl = 0
+ xw = 0
+ mobmod = 0
+ binunit = 2
+ dwg = 0
+ dwb = 0
// NEW BSIM4 Parameters(Model Selectors)
+ igcmod = 0
+ igbmod = 0
+ rgatemod = 0
+ rbodymod = 1
+ trnqsmod = 0
+ acnqsmod = 0
+ fnoimod = 1
+ tnoimod = 1
+ permod = 1
+ geomod = 0
+ rdsmod = 0
+ tempmod = 0
// ******
// NEW BSIM4 Parameters(4.4 Version)
+ lintnoi = 0.0
+ vfbsdoff = 0
+ lambda = 0
+ vtl = 0
+ lc = 5e-009
+ xn = 3
+ rnoia = 0.89
+ rnoib = 0.38
+ tnoia = 6.4e6
+ tnoib = 7.2e6
// NEW BSIM4 Parameters(Process Parameters)
+ epsrox = 3.9
+ toxe = 1.16e-008*nmos_nat_v3_toxe_mult + nmos_nat_v3_toxe_slope_spectre*(1.16e-008*nmos_nat_v3_toxe_mult*(nmos_nat_v3_toxe_slope/sqrt(l*w*m)))
+ dtox = 0
+ ndep = 1.7e+017
+ nsd = 1e+020
+ rshg = 0.1
// ***
+ rsh = 1*nmos_nat_v3_rshn_mult
//
// THRESHOLD VOLTAGE PARAMETERS
//
+ vth0 = 0.071092+nmos_nat_v3_vth0_diff_8 + nmos_nat_v3_vth0_slope_spectre*(nmos_nat_v3_vth0_slope/sqrt(l*w*m))
+ k1 = 0.33502
+ k2 = 0+nmos_nat_v3_k2_diff_8
+ k3 = 0
+ dvt0 = 1e-010
+ dvt1 = 0.536
+ dvt2 = -0.05
+ dvt0w = 0
+ dvt1w = 5000000
+ dvt2w = -0.032
+ w0 = 0
+ k3b = 0
// NEW BSIM4 Parameters for Level 54
+ phin = 0.01855708
+ lpe0 = -1e-010
+ lpeb = 0
+ vbm = -3
+ dvtp0 = 0
+ dvtp1 = 0
//
// MOBILITY PARAMETERS
//
+ vsat = 120770+nmos_nat_v3_vsat_diff_8
+ ua = 4.145e-009+nmos_nat_v3_ua_diff_8
+ ub = 3.7798e-019+nmos_nat_v3_ub_diff_8
+ uc = 1.3541e-010
+ rdsw = 0+nmos_nat_v3_rdsw_diff_8
+ prwb = 0
+ prwg = 0
+ wr = 1
+ u0 = 0.083529+nmos_nat_v3_u0_diff_8
+ a0 = 0.00031139121+nmos_nat_v3_a0_diff_8
+ keta = 0.0047834+nmos_nat_v3_keta_diff_8
+ a1 = 0
+ a2 = 0.6218093
+ ags = 0.00014554757+nmos_nat_v3_ags_diff_8
+ b0 = 0+nmos_nat_v3_b0_diff_8
+ b1 = 0+nmos_nat_v3_b1_diff_8
// NEW BSIM4 Parameters(Mobility Parameters)
+ eu = 1.67
+ rdswmin = 0
+ rdw = 0
+ rdwmin = 0
+ rsw = 0
+ rswmin = 0
// ****
//
// SUBTHRESHOLD CURRENT PARAMETERS
//
+ voff = -0.098774+nmos_nat_v3_voff_diff_8 + nmos_nat_v3_voff_slope_spectre*(nmos_nat_v3_voff_slope/sqrt(l*w*m))
+ nfactor = 0.77345+nmos_nat_v3_nfactor_diff_8 + nmos_nat_v3_nfactor_slope_spectre*(nmos_nat_v3_nfactor_slope/sqrt(l*w*m))
+ up = 0.0
+ ud = 0.0
+ lp = 1.0
+ tvfbsdoff = 0.0
+ tvoff = 0+nmos_nat_v3_tvoff_diff_8
+ cit = -3.3686011e-037
+ cdsc = 0
+ cdscb = -0.0001
+ cdscd = 1.5e-005
+ eta0 = 0+nmos_nat_v3_eta0_diff_8
+ etab = 0
+ dsub = 0.071143
// NEW BSIM4 Parameters(Sub-threshold parameters)
+ voffl = -2.9752837e-011
+ minv = 0
// ****
//
// ROUT PARAMETERS
//
+ pclm = 2.8944111+nmos_nat_v3_pclm_diff_8
+ pdiblc1 = 0.87012255
+ pdiblc2 = 0.032974
+ pdiblcb = -0.05
+ drout = 0.27268
+ pscbe1 = 4.24e+009
+ pscbe2 = 1e-008
+ pvag = 5.2718232
+ delta = 0.01
+ alpha0 = 3.498e-007
+ alpha1 = 0.35
+ beta0 = 21.582
// NEW BSIM4 Parameters(ROUT Parameters)
+ fprout = 10.125
+ pdits = 5.666761e-016+nmos_nat_v3_pdits_diff_8
+ pditsl = 0
+ pditsd = 0+nmos_nat_v3_pditsd_diff_8
// ***
// NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+ agidl = 0
+ bgidl = 2.3e+009
+ cgidl = 0.8
+ egidl = 0.5
// ***
// NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+ aigbacc = 0.43
+ bigbacc = 0.054
+ cigbacc = 0.075
+ nigbacc = 1
+ aigbinv = 0.35
+ bigbinv = 0.03
+ cigbinv = 0.006
+ eigbinv = 1.1
+ nigbinv = 3
+ aigc = 0.43
+ bigc = 0.054
+ cigc = 0.075
+ nigc = 1
+ aigsd = 0.43
+ bigsd = 0.054
+ cigsd = 0.075
+ dlcig = 0
+ poxedge = 1
+ pigcd = 1
+ ntox = 1
+ toxref = 1.16e-008
// ****
//
// TEMPERATURE EFFECTS PARAMETERS
//
+ kt1 = -0.30496+nmos_nat_v3_kt1_diff_8
+ kt2 = -0.02
+ at = 34830
+ ute = -1.6817
+ ua1 = 1e-009
+ ub1 = -9.9403e-018
+ uc1 = -2.5133e-010
+ kt1l = 0
+ prt = 0
// NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+ xrcrg1 = 12
+ xrcrg2 = 1
+ rbpb = 50
+ rbpd = 50
+ rbps = 50
+ rbdb = 50
+ rbsb = 50
+ gbmin = 1e-012
// ***
// NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+ noia = 2.5e+41
+ noib = 0.0
+ noic = 0.0
+ em = 4.1000000E+07
+ af = 1
+ ef = 1.0
+ kf = 0
+ ntnoi = 1
// ****
// NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+ dmcg = 0
+ dmcgt = 0
+ dmdg = 0
+ xgw = 0
+ xgl = 0
+ ngcon = 1
// ***
//
// DIODE DC IV PARAMTERS
//
// NEW BSIM4 Parameters(DIODE DC IV parameters)
+ diomod = 1
+ njs = 1.5764
+ jss = 0.00042966
+ jsws = 8.040000000000001e-10
+ xtis = 0
+ bvs = 12.69
+ xjbvs = 1
+ ijthsrev = 0.1
+ ijthsfwd = 0.1
//
// DIODE and FET CAPACITANCE PARAMETERS
//
+ tpb = 0.0019685
+ tpbsw = 0.001
+ tpbswg = 0
+ tcj = 0.00083
+ tcjsw = 0
+ tcjswg = 0
+ cgdo = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgso = 3.2646e-010*nmos_nat_v3_overlap_mult
+ cgbo = 0
+ capmod = 2
+ xpart = 0
+ cgsl = 5e-011*nmos_nat_v3_overlap_mult
+ cgdl = 5e-011*nmos_nat_v3_overlap_mult
+ cf = 0
+ clc = 1e-007
+ cle = 0.6
+ dlc = 6.5233e-008+nmos_nat_v3_dlc_diff+nmos_nat_v3_dlc_rotweak
+ dwc = 0+nmos_nat_v3_dwc_diff
+ vfbcv = -1
+ acde = 0.4
+ moin = 15
+ noff = 4.00
+ voffcv = -0.14208
+ ngate = 1e23
+ lwc = 0
+ llc = 0
+ lwlc = 0
+ wlc = 0
+ wwc = 0
+ wwlc = 0
// NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ ckappas = 0.6
+ cjs = 0.0008602*nmos_nat_v3_ajunction_mult
+ mjs = 0.28329
+ pbs = 0.66345
+ cjsws = 8.5152e-011*nmos_nat_v3_pjunction_mult
+ mjsws = 0.057926
+ pbsws = 1
+ cjswgs = 3.58e-011*nmos_nat_v3_pjunction_mult
+ mjswgs = 0.33
+ pbswgs = 0.2442
//
// STRESS PARAMETERS
//
+ saref = 1.95e-06
+ sbref = 1.94e-06
+ wlod = 0+nmos_nat_v3_wlod_diff
+ kvth0 = 0+nmos_nat_v3_kvth0_diff
+ lkvth0 = 0+nmos_nat_v3_lkvth0_diff
+ wkvth0 = 0+nmos_nat_v3_wkvth0_diff
+ pkvth0 = 0
+ llodvth = 0
+ wlodvth = 1
+ stk2 = 0
+ lodk2 = 1
+ lodeta0 = 1
+ ku0 = 0+nmos_nat_v3_ku0_diff
+ lku0 = 0+nmos_nat_v3_lku0_diff
+ wku0 = 0+nmos_nat_v3_wku0_diff
+ pku0 = 0
+ llodku0 = 0
+ wlodku0 = 1
+ kvsat = 0+nmos_nat_v3_kvsat_diff
+ steta0 = 0
+ tku0 = 0
}
ends nmos_nat_v3
// *****