| // 2020/03/09 Suriono |
| // Why : New S130 models for S130 PDK |
| // What : Remove "mult" parameter, it is not used anymore. |
| // Replace "mult" with "m" for matching scale |
| // =========================================================== |
| |
| *Auto-converted ../spectremodels/pmos_rf_base_b.pm3 by model_spectre_mismatchmaker.rb |
| // converted from amsmodels/pmos_rf_base_b.pm3 |
| simulator lang=spectre |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: ovr |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m2.rf pmos -p -npmos_rf_base pmos_rf_base_m2_b.pm pmos_rf_base_m2_b_bsimtranout.pm |
| // Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pmos/combined |
| // Time: Mon May 12 16:28:26 2008 |
| // Rule File: pmos_bsim4_RF_m2.rf |
| // Output File: pmos_rf_base_m2_b_bsimtranout.pm |
| // Input Files: |
| // (1) pmos_rf_base_m2_b.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| // spectre mismatch params here |
| parameters pmos_rf_b_toxe_slope_spectre = 0.0 |
| parameters pmos_rf_b_vth0_slope_spectre = 0.0 |
| parameters pmos_rf_b_voff_slope_spectre = 0.0 |
| parameters pmos_rf_b_nfactor_slope_spectre = 0.0 |
| statistics { |
| process { |
| } |
| mismatch { |
| vary pmos_rf_b_toxe_slope_spectre dist=gauss std = 1.0 |
| vary pmos_rf_b_vth0_slope_spectre dist=gauss std = 1.0 |
| vary pmos_rf_b_voff_slope_spectre dist=gauss std = 1.0 |
| vary pmos_rf_b_nfactor_slope_spectre dist=gauss std = 1.0 |
| } |
| } |
| inline subckt pmos_rf_base_m2_b (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| pmos_rf_base_m2_b (d g s b) pmos_rf_base_m2_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| |
| model pmos_rf_base_m2_b_model bsim4 { |
| 0: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.62e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.022+pmos_rf_base_m2_b_vth0_diff_0 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope2/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_0 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.784e+04+pmos_rf_base_m2_b_vsat_diff_0 |
| + ua = -2.45e-09+pmos_rf_base_m2_b_ua_diff_0 |
| + ub = 2.075e-18+pmos_rf_base_m2_b_ub_diff_0 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_0 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00307+pmos_rf_base_m2_b_u0_diff_0 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_0 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_0 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_0 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_0 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2969+pmos_rf_base_m2_b_voff_diff_0 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.23+pmos_rf_base_m2_b_nfactor_diff_0 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1799 |
| + etab = -0.07835 |
| + dsub = 0.2663 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.4678 |
| + pdiblc1 = 0.235 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4527 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.05627 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.556+pmos_rf_base_m2_b_kt1_diff_0 |
| + kt2 = -0.122 |
| + at = 4.554e+04 |
| + ute = -0.39 |
| + ua1 = 1.346e-10 |
| + ub1 = 4.516e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 800*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 6e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 2e-12 |
| + cgdo = 1.6e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.505e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 2.12e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = -7e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.0862 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps1p65p18m2x4_sim.pm ps1p65xp18m2x4_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 17:09:12 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps1p65xp18m2x4_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps1p65p18m2x4_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 1: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.62e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.984+pmos_rf_base_m2_b_vth0_diff_1 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope3/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_1 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.217e+04+pmos_rf_base_m2_b_vsat_diff_1 |
| + ua = -2.37e-09+pmos_rf_base_m2_b_ua_diff_1 |
| + ub = 1.99e-18+pmos_rf_base_m2_b_ub_diff_1 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_1 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00305+pmos_rf_base_m2_b_u0_diff_1 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_1 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_1 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_1 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_1 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3374+pmos_rf_base_m2_b_voff_diff_1 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 5.99+pmos_rf_base_m2_b_nfactor_diff_1 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1799 |
| + etab = -0.07835 |
| + dsub = 0.2663 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.4678 |
| + pdiblc1 = 7.656e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.5264 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.0521 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.556+pmos_rf_base_m2_b_kt1_diff_1 |
| + kt2 = -0.122 |
| + at = 4.554e+04 |
| + ute = -0.39 |
| + ua1 = 1.346e-10 |
| + ub1 = 4.516e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 800*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 7e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 2e-12 |
| + cgdo = 1.7e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.505e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 2.12e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = -2e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0023*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.0862 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps1p65p25m2x4_sim.pm ps1p65xp25m2x4_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 18:54:09 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps1p65xp25m2x4_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps1p65p25m2x4_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 2: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope1/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.62e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.945+pmos_rf_base_m2_b_vth0_diff_2 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope1/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_2 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.4e+04+pmos_rf_base_m2_b_vsat_diff_2 |
| + ua = -2.199e-09+pmos_rf_base_m2_b_ua_diff_2 |
| + ub = 1.855e-18+pmos_rf_base_m2_b_ub_diff_2 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_2 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.003331+pmos_rf_base_m2_b_u0_diff_2 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_2 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_2 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_2 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_2 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3104+pmos_rf_base_m2_b_voff_diff_2 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 5.87+pmos_rf_base_m2_b_nfactor_diff_2 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1799 |
| + etab = -0.07835 |
| + dsub = 0.3036 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.4678 |
| + pdiblc1 = 0.1 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.7475 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.0521 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.556+pmos_rf_base_m2_b_kt1_diff_2 |
| + kt2 = -0.122 |
| + at = 4.554e+04 |
| + ute = -0.39 |
| + ua1 = 1.346e-10 |
| + ub1 = 4.516e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 800*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 2e-12 |
| + cgdo = 1.4e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.505e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 5.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 2.12e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = -4e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0023*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.0862 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1 |
| // ***** |
| } |
| ends pmos_rf_base_m2_b |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: ovr |
| // Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m2.rf pmos -p -npmos_rf_base ps3p15m2x2_iccap_ovr.pm ps3p15m2x2_bsimtranout.pm |
| // Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pmos/combined |
| // Time: Mon Apr 14 11:45:36 2008 |
| // Rule File: pmos_bsim4_RF_m2.rf |
| // Output File: ps3p15m2x2_bsimtranout.pm |
| // Input Files: |
| // (1) ps3p15m2x2_iccap_ovr.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| inline subckt pmos_rf_base_m2_b_w3 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| pmos_rf_base_m2_b_w3 (d g s b) pmos_rf_base_m2_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model pmos_rf_base_m2_b_model bsim4 { |
| 3: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.04+pmos_rf_base_m2_b_vth0_diff_3 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope2/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_3 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.2e+04+pmos_rf_base_m2_b_vsat_diff_3 |
| + ua = -2.307e-09+pmos_rf_base_m2_b_ua_diff_3 |
| + ub = 1.975e-18+pmos_rf_base_m2_b_ub_diff_3 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_3 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00431+pmos_rf_base_m2_b_u0_diff_3 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_3 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_3 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_3 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_3 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3297+pmos_rf_base_m2_b_voff_diff_3 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m2_b_nfactor_diff_3 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.006804 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.279 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.3382 |
| + pdiblc1 = 0.24 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4851 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.1 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5203+pmos_rf_base_m2_b_kt1_diff_3 |
| + kt2 = -0.122 |
| + at = 1.916e+04 |
| + ute = -0.189 |
| + ua1 = 1.346e-10 |
| + ub1 = 9.851e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 8e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.555e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 4.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.52e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 6e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.8 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps3p18m2x2_sim.pm ps3xp18m2x2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 17:38:53 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps3xp18m2x2_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps3p18m2x2_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 4: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope1/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.005+pmos_rf_base_m2_b_vth0_diff_4 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope3/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_4 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.2e+04+pmos_rf_base_m2_b_vsat_diff_4 |
| + ua = -2.197e-09+pmos_rf_base_m2_b_ua_diff_4 |
| + ub = 1.859e-18+pmos_rf_base_m2_b_ub_diff_4 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_4 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00429+pmos_rf_base_m2_b_u0_diff_4 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_4 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_4 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_4 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_4 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m2_b_voff_diff_4 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m2_b_nfactor_diff_4 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.006804 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.279 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.2949 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4851 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.1 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.52026+pmos_rf_base_m2_b_kt1_diff_4 |
| + kt2 = -0.122 |
| + at = 1.916e+04 |
| + ute = -0.189 |
| + ua1 = 1.346e-10 |
| + ub1 = 9.851e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.05e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.455e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 7e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.002*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.8 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 2.5e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps3p25m2x2_sim.pm ps3xp25m2x2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 17:39:11 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps3xp25m2x2_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps3p25m2x2_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 5: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope1/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.976+pmos_rf_base_m2_b_vth0_diff_5 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope1/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_5 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.976e+04+pmos_rf_base_m2_b_vsat_diff_5 |
| + ua = -2.187e-09+pmos_rf_base_m2_b_ua_diff_5 |
| + ub = 1.834e-18+pmos_rf_base_m2_b_ub_diff_5 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_5 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00365+pmos_rf_base_m2_b_u0_diff_5 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_5 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_5 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_5 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_5 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m2_b_voff_diff_5 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m2_b_nfactor_diff_5 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.0063 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.31 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5899 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.5053 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.03747 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.52026+pmos_rf_base_m2_b_kt1_diff_5 |
| + kt2 = -0.122 |
| + at = 1.916e+04 |
| + ute = -0.189 |
| + ua1 = 1.346e-10 |
| + ub1 = 9.851e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.2e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.455e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 7e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0022*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| } |
| ends pmos_rf_base_m2_b_w3 |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps5p15m2x1_sim.pm ps5xp15m2x1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 18:54:48 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps5xp15m2x1_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps5p15m2x1_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| inline subckt pmos_rf_base_m2_b_w5 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| pmos_rf_base_m2_b_w5 (d g s b) pmos_rf_base_m2_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| |
| model pmos_rf_base_m2_b_model bsim4 { |
| 6: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.058+pmos_rf_base_m2_b_vth0_diff_6 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope2/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_6 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.7e+04+pmos_rf_base_m2_b_vsat_diff_6 |
| + ua = -2.311e-09+pmos_rf_base_m2_b_ua_diff_6 |
| + ub = 1.91e-18+pmos_rf_base_m2_b_ub_diff_6 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_6 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.004327+pmos_rf_base_m2_b_u0_diff_6 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_6 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_6 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_6 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_6 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m2_b_voff_diff_6 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 5.651+pmos_rf_base_m2_b_nfactor_diff_6 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.0066 |
| + cdscb = 0 |
| + cdscd = 0.0039 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.298 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5309 |
| + pdiblc1 = 0.248 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4188 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.07242 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.56212+pmos_rf_base_m2_b_kt1_diff_6 |
| + kt2 = -0.122 |
| + at = 2.705e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 5.223e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 200*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 7.4e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.505e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 1.3e-08+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0022*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps5p18m2x1_sim.pm ps5xp18m2x1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 17:41:37 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps5xp18m2x1_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps5p18m2x1_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 7: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope1/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.021+pmos_rf_base_m2_b_vth0_diff_7 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope3/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_7 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.84e+04+pmos_rf_base_m2_b_vsat_diff_7 |
| + ua = -2.321e-09+pmos_rf_base_m2_b_ua_diff_7 |
| + ub = 1.953e-18+pmos_rf_base_m2_b_ub_diff_7 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_7 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.0037+pmos_rf_base_m2_b_u0_diff_7 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_7 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_7 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_7 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_7 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3074+pmos_rf_base_m2_b_voff_diff_7 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m2_b_nfactor_diff_7 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.0046 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.2663 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.4186 |
| + pdiblc1 = 0 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.627 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.05346 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.56212+pmos_rf_base_m2_b_kt1_diff_7 |
| + kt2 = -0.122 |
| + at = 3.472e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 5.223e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 200*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.505e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 1.4e-08+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0022*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps5p25m2x1_sim.pm ps5xp25m2x1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 18:09:50 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps5xp25m2x1_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps5p25m2x1_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 8: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope1/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.977+pmos_rf_base_m2_b_vth0_diff_8 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope1/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m2_b_k2_diff_8 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.708e+04+pmos_rf_base_m2_b_vsat_diff_8 |
| + ua = -2.21e-09+pmos_rf_base_m2_b_ua_diff_8 |
| + ub = 1.824e-18+pmos_rf_base_m2_b_ub_diff_8 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m2_b_rdsw_diff_8 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00375+pmos_rf_base_m2_b_u0_diff_8 |
| + a0 = 0.8909+pmos_rf_base_m2_b_a0_diff_8 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m2_b_ags_diff_8 |
| + b0 = 0+pmos_rf_base_m2_b_b0_diff_8 |
| + b1 = 0+pmos_rf_base_m2_b_b1_diff_8 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m2_b_voff_diff_8 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m2_b_nfactor_diff_8 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.298 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5899 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.5264 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.0457 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5162+pmos_rf_base_m2_b_kt1_diff_8 |
| + kt2 = -0.122 |
| + at = 4.321e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 5.223e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 200*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 9.9e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.505e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 1e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0022*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| } |
| ends pmos_rf_base_m2_b_w5 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: ovr |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m4.rf pmos -p -npmos_rf_base pmos_rf_base_m4_b.pm pmos_rf_base_m4_b_bsimtranout.pm |
| // Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pmos/combined |
| // Time: Mon May 12 16:38:38 2008 |
| // Rule File: pmos_bsim4_RF_m4.rf |
| // Output File: pmos_rf_base_m4_b_bsimtranout.pm |
| // Input Files: |
| // (1) pmos_rf_base_m4_b.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| // spectre mismatch params here |
| //parameters pmos_rf_b_toxe_slope_spectre = 0.0 |
| //parameters pmos_rf_b_vth0_slope_spectre = 0.0 |
| //parameters pmos_rf_b_voff_slope_spectre = 0.0 |
| //parameters pmos_rf_b_nfactor_slope_spectre = 0.0 |
| //statistics { |
| // process { |
| // } |
| // mismatch { |
| // vary pmos_rf_b_toxe_slope_spectre dist=gauss std = 1.0 |
| // vary pmos_rf_b_vth0_slope_spectre dist=gauss std = 1.0 |
| // vary pmos_rf_b_voff_slope_spectre dist=gauss std = 1.0 |
| // vary pmos_rf_b_nfactor_slope_spectre dist=gauss std = 1.0 |
| // } |
| //} |
| inline subckt pmos_rf_base_m4_b (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| pmos_rf_base_m4_b (d g s b) pmos_rf_base_m4_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| |
| model pmos_rf_base_m4_b_model bsim4 { |
| 0: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.044+pmos_rf_base_m4_b_vth0_diff_0 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope2/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_0 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.908e+04+pmos_rf_base_m4_b_vsat_diff_0 |
| + ua = -2.368e-09+pmos_rf_base_m4_b_ua_diff_0 |
| + ub = 1.997e-18+pmos_rf_base_m4_b_ub_diff_0 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_0 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00329+pmos_rf_base_m4_b_u0_diff_0 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_0 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_0 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_0 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_0 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.345+pmos_rf_base_m4_b_voff_diff_0 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.36+pmos_rf_base_m4_b_nfactor_diff_0 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.00043 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1799 |
| + etab = -0.07835 |
| + dsub = 0.2663 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5085 |
| + pdiblc1 = 0.12 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.379 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.05667 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5+pmos_rf_base_m4_b_kt1_diff_0 |
| + kt2 = -0.122 |
| + at = 3.02e+04 |
| + ute = -0.036 |
| + ua1 = 1.992e-10 |
| + ub1 = 4.398e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 1600*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 8.2e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 2e-12 |
| + cgdo = 1.7e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.455e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 2.12e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 6e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0015*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npmos_rf_base ps1p65p18m4x2_sim.pm ps1p65xp18m4x2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/pmos/combined/beta1 |
| // Time: Wed Dec 12 17:05:19 2007 |
| // Rule File: pmos_bsim4_RF.rf |
| // Output File: ps1p65xp18m4x2_bsimtranoutput.pm |
| // Input Files: |
| // (1) ps1p65p18m4x2_sim.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| |
| 1: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 25e6 |
| + tnoib = 0.0e-6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope1/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.005+pmos_rf_base_m4_b_vth0_diff_1 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope3/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_1 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.808e+04+pmos_rf_base_m4_b_vsat_diff_1 |
| + ua = -2.325e-09+pmos_rf_base_m4_b_ua_diff_1 |
| + ub = 1.939e-18+pmos_rf_base_m4_b_ub_diff_1 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_1 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.003126+pmos_rf_base_m4_b_u0_diff_1 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_1 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_1 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_1 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_1 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3248+pmos_rf_base_m4_b_voff_diff_1 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m4_b_nfactor_diff_1 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1799 |
| + etab = -0.07835 |
| + dsub = 0.2663 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5085 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.5264 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.0457 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.570+pmos_rf_base_m4_b_kt1_diff_1 |
| + kt2 = -0.122 |
| + at = 2.796e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 4.398e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 1600*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 9.2e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.3632 |
| + jss = 2.1483e-05 |
| + jsws = 8.040000000000001e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 2e-12 |
| + cgdo = 1.7e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.455e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 2.12e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 6e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0015*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3.2e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| 2: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.62e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.955+pmos_rf_base_m4_b_vth0_diff_2 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope1/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_2 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.364e+04+pmos_rf_base_m4_b_vsat_diff_2 |
| + ua = -2.199e-09+pmos_rf_base_m4_b_ua_diff_2 |
| + ub = 1.855e-18+pmos_rf_base_m4_b_ub_diff_2 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_2 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.003331+pmos_rf_base_m4_b_u0_diff_2 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_2 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_2 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_2 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_2 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3104+pmos_rf_base_m4_b_voff_diff_2 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 5.87+pmos_rf_base_m4_b_nfactor_diff_2 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1799 |
| + etab = -0.07835 |
| + dsub = 0.3036 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.4678 |
| + pdiblc1 = 0.1 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.7475 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.0521 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.556+pmos_rf_base_m4_b_kt1_diff_2 |
| + kt2 = -0.122 |
| + at = 3.598e+04 |
| + ute = -0.39 |
| + ua1 = 1.346e-10 |
| + ub1 = 4.516e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 1600*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.25e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 2e-12 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.3e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 5.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.7e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = -4e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.002*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.0862 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 2.8e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1 |
| // ***** |
| } |
| ends pmos_rf_base_m4_b |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: ovr |
| // Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m4.rf pmos -p -npmos_rf_base ps3p15m4x1_iccap_ovr.pm ps3p15m4x1_bsimtranout.pm |
| // Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pmos/combined |
| // Time: Mon Apr 14 11:45:57 2008 |
| // Rule File: pmos_bsim4_RF_m4.rf |
| // Output File: ps3p15m4x1_bsimtranout.pm |
| // Input Files: |
| // (1) ps3p15m4x1_iccap_ovr.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 PMOS Model |
| inline subckt pmos_rf_base_m4_b_w3 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| pmos_rf_base_m4_b_w3 (d g s b) pmos_rf_base_m4_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model pmos_rf_base_m4_b_model bsim4 { |
| 3: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.05+pmos_rf_base_m4_b_vth0_diff_3 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope2/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_3 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.1e+04+pmos_rf_base_m4_b_vsat_diff_3 |
| + ua = -2.307e-09+pmos_rf_base_m4_b_ua_diff_3 |
| + ub = 1.975e-18+pmos_rf_base_m4_b_ub_diff_3 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_3 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00431+pmos_rf_base_m4_b_u0_diff_3 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_3 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_3 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_3 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_3 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3297+pmos_rf_base_m4_b_voff_diff_3 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m4_b_nfactor_diff_3 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.006804 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1612 |
| + etab = -0.07835 |
| + dsub = 0.279 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.3382 |
| + pdiblc1 = 0.2448 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4366 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.1 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5515+pmos_rf_base_m4_b_kt1_diff_3 |
| + kt2 = -0.122 |
| + at = 2.299e+04 |
| + ute = -0.1436 |
| + ua1 = 3.138e-10 |
| + ub1 = 4.531e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 800*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.2e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.1e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.055e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 4.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 6e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.8 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 2.4e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| 4: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.021+pmos_rf_base_m4_b_vth0_diff_4 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope3/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_4 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.912e+04+pmos_rf_base_m4_b_vsat_diff_4 |
| + ua = -2.219e-09+pmos_rf_base_m4_b_ua_diff_4 |
| + ub = 1.915e-18+pmos_rf_base_m4_b_ub_diff_4 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_4 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.004419+pmos_rf_base_m4_b_u0_diff_4 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_4 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_4 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_4 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_4 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m4_b_voff_diff_4 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 5.242+pmos_rf_base_m4_b_nfactor_diff_4 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.006804 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.279 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.2949 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4851 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.1 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5203+pmos_rf_base_m4_b_kt1_diff_4 |
| + kt2 = -0.122 |
| + at = 1.916e+04 |
| + ute = -0.189 |
| + ua1 = 1.346e-10 |
| + ub1 = 9.851e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 800*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.25e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.7e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.3e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 7e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0022*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.8 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| 5: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.983+pmos_rf_base_m4_b_vth0_diff_5 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope1/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_5 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.743e+04+pmos_rf_base_m4_b_vsat_diff_5 |
| + ua = -2.187e-09+pmos_rf_base_m4_b_ua_diff_5 |
| + ub = 1.852e-18+pmos_rf_base_m4_b_ub_diff_5 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_5 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00365+pmos_rf_base_m4_b_u0_diff_5 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_5 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_5 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_5 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_5 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m4_b_voff_diff_5 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 5.531+pmos_rf_base_m4_b_nfactor_diff_5 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.0063 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.31 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5899 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.5053 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.03747 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5203+pmos_rf_base_m4_b_kt1_diff_5 |
| + kt2 = -0.122 |
| + at = 1.916e+04 |
| + ute = -0.189 |
| + ua1 = 1.346e-10 |
| + ub1 = 9.851e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 800*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.05e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.155e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 7e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.002*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 2.6e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| } |
| ends pmos_rf_base_m4_b_w3 |
| |
| inline subckt pmos_rf_base_m4_b_w5 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| pmos_rf_base_m4_b_w5 (d g s b) pmos_rf_base_m4_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model pmos_rf_base_m4_b_model bsim4 { |
| 6: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.079+pmos_rf_base_m4_b_vth0_diff_6 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope2/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_6 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.7e+04+pmos_rf_base_m4_b_vsat_diff_6 |
| + ua = -2.311e-09+pmos_rf_base_m4_b_ua_diff_6 |
| + ub = 1.948e-18+pmos_rf_base_m4_b_ub_diff_6 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_6 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.004327+pmos_rf_base_m4_b_u0_diff_6 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_6 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_6 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_6 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_6 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m4_b_voff_diff_6 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.103+pmos_rf_base_m4_b_nfactor_diff_6 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.0066 |
| + cdscb = 0 |
| + cdscd = 0.0039 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.298 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5309 |
| + pdiblc1 = 0.248 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.4188 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.07242 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5621+pmos_rf_base_m4_b_kt1_diff_6 |
| + kt2 = -0.122 |
| + at = 2.705e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 5.223e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 7.4e-07+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.52e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 1.3e-08+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0022*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 3e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| 7: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -1.026+pmos_rf_base_m4_b_vth0_diff_7 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope3/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_7 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 7.213e+04+pmos_rf_base_m4_b_vsat_diff_7 |
| + ua = -2.328e-09+pmos_rf_base_m4_b_ua_diff_7 |
| + ub = 1.953e-18+pmos_rf_base_m4_b_ub_diff_7 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_7 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.0037+pmos_rf_base_m4_b_u0_diff_7 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_7 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_7 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_7 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_7 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3074+pmos_rf_base_m4_b_voff_diff_7 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 6.012+pmos_rf_base_m4_b_nfactor_diff_7 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0.0046 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.2663 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.4186 |
| + pdiblc1 = 0 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.627 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.05346 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5621+pmos_rf_base_m4_b_kt1_diff_7 |
| + kt2 = -0.122 |
| + at = 3.472e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 5.223e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 0.85e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.5e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1.105e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.72e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 1.4e-08+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0017*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 2.7e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| // ***** |
| |
| 8: type=p |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.23e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -1.399e-08+pmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 7.304e-09+pmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = -5.722e-09 |
| + dwb = -1.786e-08 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -2.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 0 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.69 |
| + rnoib = 0.34 |
| + tnoia = 2.5e+07 |
| + tnoib = 0 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.23e-09*pmos_rf_base_b_toxe_mult + pmos_rf_b_toxe_slope_spectre*(4.23e-09*pmos_rf_base_b_toxe_mult*(pmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 1.6e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+pmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = -0.9895+pmos_rf_base_m4_b_vth0_diff_8 + pmos_rf_b_vth0_slope_spectre*(pmos_rf_b_vth0_slope1/sqrt(l*w*m)) |
| + k1 = 1.038 |
| + k2 = -0.1734+pmos_rf_base_m4_b_k2_diff_8 |
| + k3 = -15.85 |
| + dvt0 = 4.585 |
| + dvt1 = 0.294 |
| + dvt2 = 0.015 |
| + dvt0w = -4.977 |
| + dvt1w = 1.147e+06 |
| + dvt2w = -0.00896 |
| + w0 = 0 |
| + k3b = 2 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 0 |
| + lpeb = 0 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 6.488e+04+pmos_rf_base_m4_b_vsat_diff_8 |
| + ua = -2.21e-09+pmos_rf_base_m4_b_ua_diff_8 |
| + ub = 1.851e-18+pmos_rf_base_m4_b_ub_diff_8 |
| + uc = 2.523e-13 |
| + rdsw = 547.9+pmos_rf_base_m4_b_rdsw_diff_8 |
| + prwb = -0.3235 |
| + prwg = 0.1376 |
| + wr = 1 |
| + u0 = 0.00375+pmos_rf_base_m4_b_u0_diff_8 |
| + a0 = 0.8909+pmos_rf_base_m4_b_a0_diff_8 |
| + keta = 0.0239 |
| + a1 = 0 |
| + a2 = 0.6419 |
| + ags = 1.25+pmos_rf_base_m4_b_ags_diff_8 |
| + b0 = 0+pmos_rf_base_m4_b_b0_diff_8 |
| + b1 = 0+pmos_rf_base_m4_b_b1_diff_8 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 547.9 |
| + rdwmin = 0 |
| + rsw = 547.9 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.3364+pmos_rf_base_m4_b_voff_diff_8 + pmos_rf_b_voff_slope_spectre*(pmos_rf_b_voff_slope1/sqrt(l*w*m)) |
| + nfactor = 5.892+pmos_rf_base_m4_b_nfactor_diff_8 + pmos_rf_b_nfactor_slope_spectre*(pmos_rf_b_nfactor_slope1/sqrt(l*w*m)) |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.1874 |
| + etab = -0.07835 |
| + dsub = 0.298 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 0 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.5899 |
| + pdiblc1 = 4.4e-11 |
| + pdiblc2 = 0 |
| + pdiblcb = -0.0001934 |
| + drout = 0.5264 |
| + pscbe1 = 5.12e+08 |
| + pscbe2 = 9.477e-08 |
| + pvag = 0 |
| + delta = 0.0457 |
| + alpha0 = 1e-10 |
| + alpha1 = 1e-10 |
| + beta0 = 8.581 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 3.016e-10 |
| + bgidl = 1e+09 |
| + cgidl = 300 |
| + egidl = 0.1 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 0.43 |
| + bigbacc = 0.054 |
| + cigbacc = 0.075 |
| + nigbacc = 1 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 3 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 1 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.23e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.5162+pmos_rf_base_m4_b_kt1_diff_8 |
| + kt2 = -0.122 |
| + at = 3.889e+04 |
| + ute = -0.3 |
| + ua1 = 1.346e-10 |
| + ub1 = 5.223e-19 |
| + uc1 = 6.005e-13 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*pmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 1.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 1.0 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.25e-06+pmos_rf_base_b_xgw_diff |
| + xgl = 0 |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.363 |
| + jss = 2.148e-05 |
| + jsws = 8.04e-10 |
| + xtis = 5.2 |
| + bvs = 12.69 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.002039 |
| + tpbsw = 0.001246 |
| + tpbswg = 0 |
| + tcj = 0.001241 |
| + tcjsw = 0.0003736 |
| + tcjswg = 0.001 |
| + cgdo = 1.3e-10*pmos_rf_base_b_overlap_mult |
| + cgso = 1e-10*pmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1.001e-11*pmos_rf_base_b_overlap_mult |
| + cgdl = 1.32e-10*pmos_rf_base_b_overlap_mult |
| + cf = 1.2e-11 |
| + clc = 0 |
| + cle = 0.6 |
| + dlc = 1e-09+pmos_rf_base_b_dlc_diff+pmos_rf_base_dlc_rotweak |
| + dwc = 0+pmos_rf_base_b_dwc_diff |
| + vfbcv = -0.1447 |
| + acde = 0.401 |
| + moin = 15 |
| + noff = 2.5 |
| + voffcv = 0.05 |
| + ngate = 1e+23 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.002*pmos_rf_base_b_ajunction_mult |
| + mjs = 0.1362 |
| + pbs = 0.9587 |
| + cjsws = 9.88e-11*pmos_rf_base_b_pjunction_mult |
| + mjsws = 0.92 |
| + pbsws = 0.94 |
| + cjswgs = 2.6e-10*pmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.12 |
| + pbswgs = 1.4 |
| } |
| ends pmos_rf_base_m4_b_w5 |
| // ***** |
| |
