| // 2020/05/14 Suriono |
| // Why : New S130 models for S130 PDK |
| // What : Remove "mult" parameter, it is not used anymore. |
| // Replace "mult" with "m" for matching scale |
| // =========================================================== |
| |
| *Auto-converted ../spectremodels/nmos_rf_base_b.pm3 by model_spectre_mismatchmaker.rb |
| // converted from amsmodels/nmos_rf_base_b.pm3 |
| simulator lang=spectre |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_1p65xp15m2x4.pm ns1p65xp15m2x4_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:31:40 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns1p65xp15m2x4_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_1p65xp15m2x4.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| // spectre mismatch params here |
| parameters nmos_rf_b_toxe_slope_spectre = 0.0 |
| parameters nmos_rf_b_vth0_slope_spectre = 0.0 |
| parameters nmos_rf_b_voff_slope_spectre = 0.0 |
| statistics { |
| process { |
| } |
| mismatch { |
| vary nmos_rf_b_toxe_slope_spectre dist=gauss std = 1.0 |
| vary nmos_rf_b_vth0_slope_spectre dist=gauss std = 1.0 |
| vary nmos_rf_b_voff_slope_spectre dist=gauss std = 1.0 |
| } |
| } |
| inline subckt nmos_rf_base_m2_b (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| nmos_rf_base_m2_b (d g s b) nmos_rf_base_m2_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| |
| model nmos_rf_base_m2_b_model bsim4 { |
| 0: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.90 |
| + rnoib = 0.36 |
| + tnoia = 2.7e7 |
| + tnoib = 9.9e6 |
| // |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.633+nmos_rf_base_m2_b_vth0_diff_0 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_0 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m2_b_vsat_diff_0 |
| + ua = -1.96e-09+nmos_rf_base_m2_b_ua_diff_0 |
| + ub = 2.15e-18+nmos_rf_base_m2_b_ub_diff_0 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_0 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.036+nmos_rf_base_m2_b_u0_diff_0 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_0 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_0 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_0 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_0 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.206+nmos_rf_base_m2_b_voff_diff_0 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 2.808+nmos_rf_base_m2_b_nfactor_diff_0 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.3121 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.2481 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.290+nmos_rf_base_m2_b_kt1_diff_0 |
| + kt2 = -0.02437 |
| + at = 5.978e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -4.98e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 900*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 7.7e-07+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.659e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.84e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1e-10*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.58e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 4.21e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_1p65xp18m2x4.pm ns1p65xp18m2x4_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:32:05 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns1p65xp18m2x4_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_1p65xp18m2x4.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 1: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -5.408e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.90 |
| + rnoib = 0.36 |
| + tnoia = 2.7e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.6345+nmos_rf_base_m2_b_vth0_diff_1 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_1 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m2_b_vsat_diff_1 |
| + ua = -1.985e-09+nmos_rf_base_m2_b_ua_diff_1 |
| + ub = 2.161e-18+nmos_rf_base_m2_b_ub_diff_1 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_1 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.037+nmos_rf_base_m2_b_u0_diff_1 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_1 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_1 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_1 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_1 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1854+nmos_rf_base_m2_b_voff_diff_1 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.629+nmos_rf_base_m2_b_nfactor_diff_1 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.3121 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.2293 |
| + pdiblc2 = 0.016 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.02336 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2779+nmos_rf_base_m2_b_kt1_diff_1 |
| + kt2 = -0.02437 |
| + at = 6.122e+04 |
| + ute = -1.5633 |
| + ua1 = 6.012e-10 |
| + ub1 = -6.52e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 900*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.12e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000992 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.629e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 4e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1e-10*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.18e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.41e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_1p65xp25m2x4.pm ns1p65xp25m2x4_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:32:32 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns1p65xp25m2x4_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_1p65xp25m2x4.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 2: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -5.408e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.90 |
| + rnoib = 0.36 |
| + tnoia = 2.7e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.625+nmos_rf_base_m2_b_vth0_diff_2 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_2 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.564e+05+nmos_rf_base_m2_b_vsat_diff_2 |
| + ua = -1.985e-09+nmos_rf_base_m2_b_ua_diff_2 |
| + ub = 2.202e-18+nmos_rf_base_m2_b_ub_diff_2 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_2 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.031+nmos_rf_base_m2_b_u0_diff_2 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_2 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_2 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_2 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_2 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1854+nmos_rf_base_m2_b_voff_diff_2 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.629+nmos_rf_base_m2_b_nfactor_diff_2 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.3121 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.04127 |
| + pdiblc2 = 0.01376 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.02336 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2779+nmos_rf_base_m2_b_kt1_diff_2 |
| + kt2 = -0.02437 |
| + at = 5.449e+04 |
| + ute = -1.5633 |
| + ua1 = 6.012e-10 |
| + ub1 = -6.52e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 900*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.35e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.629e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 4.1e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1e-10*nmos_rf_base_b_overlap_mult |
| + cgdl = 8e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 1.7e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.41e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| } |
| ends nmos_rf_base_m2_b |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_3xp15m2x2.pm ns3xp15m2x2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:35:30 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns3xp15m2x2_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_3xp15m2x2.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| inline subckt nmos_rf_base_m2_b_w3 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| nmos_rf_base_m2_b_w3 (d g s b) nmos_rf_base_m2_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model nmos_rf_base_m2_b_model bsim4 { |
| 3: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.59+nmos_rf_base_m2_b_vth0_diff_3 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_3 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m2_b_vsat_diff_3 |
| + ua = -2.032e-09+nmos_rf_base_m2_b_ua_diff_3 |
| + ub = 2.05e-18+nmos_rf_base_m2_b_ub_diff_3 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_3 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.03599+nmos_rf_base_m2_b_u0_diff_3 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_3 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_3 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_3 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_3 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1943+nmos_rf_base_m2_b_voff_diff_3 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 3.052+nmos_rf_base_m2_b_nfactor_diff_3 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.5779 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.2481 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.290+nmos_rf_base_m2_b_kt1_diff_3 |
| + kt2 = -0.02437 |
| + at = 6.698e+04 |
| + ute = -1.5297 |
| + ua1 = 6.012e-10 |
| + ub1 = -3.37e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 440*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 8.6e-07+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000992 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.489e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.7e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.58e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.01e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_3xp18m2x2.pm ns3xp18m2x2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:36:54 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns3xp18m2x2_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_3xp18m2x2.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 4: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.618+nmos_rf_base_m2_b_vth0_diff_4 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_4 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.57e+05+nmos_rf_base_m2_b_vsat_diff_4 |
| + ua = -2.032e-09+nmos_rf_base_m2_b_ua_diff_4 |
| + ub = 2.124e-18+nmos_rf_base_m2_b_ub_diff_4 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_4 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.03199+nmos_rf_base_m2_b_u0_diff_4 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_4 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_4 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_4 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_4 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1943+nmos_rf_base_m2_b_voff_diff_4 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.8+nmos_rf_base_m2_b_nfactor_diff_4 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.5779 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.1768 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03138 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.290+nmos_rf_base_m2_b_kt1_diff_4 |
| + kt2 = -0.02437 |
| + at = 6.698e+04 |
| + ute = -1.5297 |
| + ua1 = 6.012e-10 |
| + ub1 = -3.37e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 440*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.489e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.5e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.68e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.01e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.15 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_3xp25m2x2.pm ns3xp25m2x2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:37:15 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns3xp25m2x2_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_3xp25m2x2.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 5: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.605+nmos_rf_base_m2_b_vth0_diff_5 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_5 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.475e+05+nmos_rf_base_m2_b_vsat_diff_5 |
| + ua = -2.046e-09+nmos_rf_base_m2_b_ua_diff_5 |
| + ub = 2.28e-18+nmos_rf_base_m2_b_ub_diff_5 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_5 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0275+nmos_rf_base_m2_b_u0_diff_5 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_5 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_5 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_5 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_5 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1943+nmos_rf_base_m2_b_voff_diff_5 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.8+nmos_rf_base_m2_b_nfactor_diff_5 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.5779 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.1768 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03138 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.290+nmos_rf_base_m2_b_kt1_diff_5 |
| + kt2 = -0.02437 |
| + at = 6.698e+04 |
| + ute = -1.5297 |
| + ua1 = 6.012e-10 |
| + ub1 = -3.37e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 440*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.35e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.889e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.6e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.68e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.71e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.15 |
| + pbswgs = 0.9064 |
| // ***** |
| } |
| ends nmos_rf_base_m2_b_w3 |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_5xp15m2x1.pm ns5xp15m2x1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:37:54 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns5xp15m2x1_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_5xp15m2x1.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| inline subckt nmos_rf_base_m2_b_w5 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| nmos_rf_base_m2_b_w5 (d g s b) nmos_rf_base_m2_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model nmos_rf_base_m2_b_model bsim4 { |
| 6: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.773e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.59+nmos_rf_base_m2_b_vth0_diff_6 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_6 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m2_b_vsat_diff_6 |
| + ua = -2.032e-09+nmos_rf_base_m2_b_ua_diff_6 |
| + ub = 2.12e-18+nmos_rf_base_m2_b_ub_diff_6 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_6 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.03599+nmos_rf_base_m2_b_u0_diff_6 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_6 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_6 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_6 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_6 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1943+nmos_rf_base_m2_b_voff_diff_6 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 3.052+nmos_rf_base_m2_b_nfactor_diff_6 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.4128 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.2481 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.31+nmos_rf_base_m2_b_kt1_diff_6 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 200*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 9.2e-07+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.089e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.4e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 4e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.85e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.31e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N5P05XP18M2X1_iccap.pm N5P05XP18M2X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 12:06:24 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N5P05XP18M2X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N5P05XP18M2X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 7: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85E-07 wmin = 5.045E-06 wmax = 5.055E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.608+nmos_rf_base_m2_b_vth0_diff_7 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_7 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.57e+05+nmos_rf_base_m2_b_vsat_diff_7 |
| + ua = -2.032e-09+nmos_rf_base_m2_b_ua_diff_7 |
| + ub = 2.184e-18+nmos_rf_base_m2_b_ub_diff_7 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_7 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.03416+nmos_rf_base_m2_b_u0_diff_7 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_7 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_7 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_7 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_7 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1943+nmos_rf_base_m2_b_voff_diff_7 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.548+nmos_rf_base_m2_b_nfactor_diff_7 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.5779 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1827 |
| + pdiblc1 = 0.1768 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03138 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.29+nmos_rf_base_m2_b_kt1_diff_7 |
| + kt2 = -0.02437 |
| + at = 6.698e+04 |
| + ute = -1.53 |
| + ua1 = 6.012e-10 |
| + ub1 = -3.37e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 200*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.189e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.2e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 3e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.78e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.01e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.15 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N5P05XP25M2X1_iccap.pm N5P05XP25M2X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 12:05:48 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N5P05XP25M2X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N5P05XP25M2X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 8: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55E-07 wmin = 5.045E-06 wmax = 5.055E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.599+nmos_rf_base_m2_b_vth0_diff_8 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m2_b_k2_diff_8 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.444e+05+nmos_rf_base_m2_b_vsat_diff_8 |
| + ua = -2.027e-09+nmos_rf_base_m2_b_ua_diff_8 |
| + ub = 2.272e-18+nmos_rf_base_m2_b_ub_diff_8 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m2_b_rdsw_diff_8 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0299+nmos_rf_base_m2_b_u0_diff_8 |
| + a0 = 1.471+nmos_rf_base_m2_b_a0_diff_8 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m2_b_ags_diff_8 |
| + b0 = -1.502e-07+nmos_rf_base_m2_b_b0_diff_8 |
| + b1 = 1.902e-09+nmos_rf_base_m2_b_b1_diff_8 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.1943+nmos_rf_base_m2_b_voff_diff_8 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 2.136+nmos_rf_base_m2_b_nfactor_diff_8 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.5779 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1827 |
| + pdiblc1 = 0.1627 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.624e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03138 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.29+nmos_rf_base_m2_b_kt1_diff_8 |
| + kt2 = -0.02437 |
| + at = 6.698e+04 |
| + ute = -1.53 |
| + ua1 = 6.012e-10 |
| + ub1 = -3.37e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 200*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.489e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 2e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 9e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.78e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.21e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.15 |
| + pbswgs = 0.9064 |
| } |
| ends nmos_rf_base_m2_b_w5 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N1P65XP15M4X2_iccap.pm N1P65XP15M4X2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:42:47 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N1P65XP15M4X2_bsimtranoutput.pm |
| // Input Files: |
| // (1) N1P65XP15M4X2_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| // spectre mismatch params here |
| //parameters nmos_rf_b_toxe_slope_spectre = 0.0 |
| //parameters nmos_rf_b_vth0_slope_spectre = 0.0 |
| //parameters nmos_rf_b_voff_slope_spectre = 0.0 |
| //statistics { |
| // process { |
| // } |
| // mismatch { |
| // vary nmos_rf_b_toxe_slope_spectre dist=gauss std = 1.0 |
| // vary nmos_rf_b_vth0_slope_spectre dist=gauss std = 1.0 |
| // vary nmos_rf_b_voff_slope_spectre dist=gauss std = 1.0 |
| // } |
| //} |
| inline subckt nmos_rf_base_m4_b (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| nmos_rf_base_m4_b (d g s b) nmos_rf_base_m4_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| |
| model nmos_rf_base_m4_b_model bsim4 { |
| 0: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55E-07 wmin = 1.645E-06 wmax = 1.655E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.90 |
| + rnoib = 0.36 |
| + tnoia = 2.7e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.604+nmos_rf_base_m4_b_vth0_diff_0 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_0 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.744e+05+nmos_rf_base_m4_b_vsat_diff_0 |
| + ua = -1.96e-09+nmos_rf_base_m4_b_ua_diff_0 |
| + ub = 2.31e-18+nmos_rf_base_m4_b_ub_diff_0 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_0 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.039+nmos_rf_base_m4_b_u0_diff_0 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_0 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_0 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_0 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_0 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.206+nmos_rf_base_m4_b_voff_diff_0 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 2.808+nmos_rf_base_m4_b_nfactor_diff_0 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.3121 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1748 |
| + pdiblc1 = 0.2729 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.29+nmos_rf_base_m4_b_kt1_diff_0 |
| + kt2 = -0.02437 |
| + at = 5.978e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -4.98e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 1800*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.083e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.559e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.64e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.58e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.91e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N1P65XP18M4X2_iccap.pm N1P65XP18M4X2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:49:06 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N1P65XP18M4X2_bsimtranoutput.pm |
| // Input Files: |
| // (1) N1P65XP18M4X2_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 1: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85E-07 wmin = 1.645E-06 wmax = 1.655E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.90 |
| + rnoib = 0.36 |
| + tnoia = 2.7e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.6282+nmos_rf_base_m4_b_vth0_diff_1 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_1 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m4_b_vsat_diff_1 |
| + ua = -1.96e-09+nmos_rf_base_m4_b_ua_diff_1 |
| + ub = 2.31e-18+nmos_rf_base_m4_b_ub_diff_1 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_1 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.036+nmos_rf_base_m4_b_u0_diff_1 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_1 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_1 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_1 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_1 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.206+nmos_rf_base_m4_b_voff_diff_1 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.685+nmos_rf_base_m4_b_nfactor_diff_1 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.3121 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1548 |
| + pdiblc1 = 0.1965 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03397 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.29+nmos_rf_base_m4_b_kt1_diff_1 |
| + kt2 = -0.02437 |
| + at = 5.978e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -4.98e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 1800*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.35e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.889e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.74e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.68e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.21e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N1P65XP25M4X2_iccap.pm N1P65XP25M4X2_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:49:21 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N1P65XP25M4X2_bsimtranoutput.pm |
| // Input Files: |
| // (1) N1P65XP25M4X2_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 2: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55E-07 wmin = 1.645E-06 wmax = 1.655E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.939e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.90 |
| + rnoib = 0.36 |
| + tnoia = 2.7e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 3.1e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.6095+nmos_rf_base_m4_b_vth0_diff_2 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_2 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.544e+05+nmos_rf_base_m4_b_vsat_diff_2 |
| + ua = -2.02e-09+nmos_rf_base_m4_b_ua_diff_2 |
| + ub = 2.344e-18+nmos_rf_base_m4_b_ub_diff_2 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_2 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0286+nmos_rf_base_m4_b_u0_diff_2 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_2 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_2 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_2 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_2 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.206+nmos_rf_base_m4_b_voff_diff_2 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 2.022+nmos_rf_base_m4_b_nfactor_diff_2 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.3121 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1548 |
| + pdiblc1 = 0.1965 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03397 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.29+nmos_rf_base_m4_b_kt1_diff_2 |
| + kt2 = -0.02437 |
| + at = 5.978e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -4.98e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 1800*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.35e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.989e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 4.04e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 8e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 1.0e-10*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.68e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 1.81e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9064 |
| // ***** |
| } |
| ends nmos_rf_base_m4_b |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base nmos_3xp15m4x1.pm ns3xp15m4x1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta1 |
| // Time: Tue Dec 11 11:38:58 2007 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: ns3xp15m4x1_bsimtranoutput.pm |
| // Input Files: |
| // (1) nmos_3xp15m4x1.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| inline subckt nmos_rf_base_m4_b_w3 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| nmos_rf_base_m4_b_w3 (d g s b) nmos_rf_base_m4_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model nmos_rf_base_m4_b_model bsim4 { |
| 3: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.076e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e7 |
| + tnoib = 9.9e6 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 2.2e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.593+nmos_rf_base_m4_b_vth0_diff_3 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_3 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m4_b_vsat_diff_3 |
| + ua = -2.032e-09+nmos_rf_base_m4_b_ua_diff_3 |
| + ub = 2.16e-18+nmos_rf_base_m4_b_ub_diff_3 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_3 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.03499+nmos_rf_base_m4_b_u0_diff_3 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_3 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_3 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_3 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_3 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2313+nmos_rf_base_m4_b_voff_diff_3 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 2.752+nmos_rf_base_m4_b_nfactor_diff_3 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.204 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1986 |
| + pdiblc1 = 0.19 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2112+nmos_rf_base_m4_b_kt1_diff_3 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 880*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.274e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.069e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 3e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.7e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.21e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N3P01XP18M4X1_iccap.pm N3P01XP18M4X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:50:19 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N3P01XP18M4X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N3P01XP18M4X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 4: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85E-07 wmin = 3.005E-06 wmax = 3.015E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.076e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 2.2e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.612+nmos_rf_base_m4_b_vth0_diff_4 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_4 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.594e+05+nmos_rf_base_m4_b_vsat_diff_4 |
| + ua = -2.032e-09+nmos_rf_base_m4_b_ua_diff_4 |
| + ub = 2.18e-18+nmos_rf_base_m4_b_ub_diff_4 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_4 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.03129+nmos_rf_base_m4_b_u0_diff_4 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_4 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_4 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_4 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_4 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2313+nmos_rf_base_m4_b_voff_diff_4 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.761+nmos_rf_base_m4_b_nfactor_diff_4 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.204 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1509 |
| + pdiblc1 = 0.1482 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2112+nmos_rf_base_m4_b_kt1_diff_4 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 880*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.509e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.5e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.7e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 3.21e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N3P01XP25M4X1_iccap.pm N3P01XP25M4X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:50:40 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N3P01XP25M4X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N3P01XP25M4X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 5: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55E-07 wmin = 3.005E-06 wmax = 3.015E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.076e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 2.2e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.599+nmos_rf_base_m4_b_vth0_diff_5 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_5 |
| + k3 = 3 |
| + dvt0 = 0.01 |
| + dvt1 = 0.2 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.498e+05+nmos_rf_base_m4_b_vsat_diff_5 |
| + ua = -2.052e-09+nmos_rf_base_m4_b_ua_diff_5 |
| + ub = 2.28e-18+nmos_rf_base_m4_b_ub_diff_5 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_5 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0275+nmos_rf_base_m4_b_u0_diff_5 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_5 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_5 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_5 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_5 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2313+nmos_rf_base_m4_b_voff_diff_5 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.902+nmos_rf_base_m4_b_nfactor_diff_5 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.204 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1177 |
| + pdiblc1 = 0.1363 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03202 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2112+nmos_rf_base_m4_b_kt1_diff_5 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 880*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.809e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.8e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 7e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 9e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.7e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.21e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| // ***** |
| } |
| ends nmos_rf_base_m4_b_w3 |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N5P05XP15M4X1_iccap.pm N5P05XP15M4X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:51:32 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N5P05XP15M4X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N5P05XP15M4X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| inline subckt nmos_rf_base_m4_b_w5 (d g s b) |
| parameters l = 1 w = 1 ad = 0 as = 0 pd = 0 ps = 0 nrd = 0 nrs = 0 sa = 0 sb = 0 sd = 0 nf = 1 |
| |
| nmos_rf_base_m4_b_w5 (d g s b) nmos_rf_base_m4_b_model l = l w = w ad = ad as = as pd = pd ps = ps nrd = nrd nrs = nrs sa = sa sb = sb sd = sd nf = nf |
| |
| model nmos_rf_base_m4_b_model bsim4 { |
| 6: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.45e-07 lmax = 1.55E-07 wmin = 5.045E-06 wmax = 5.055E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.035e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 2.2e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.59+nmos_rf_base_m4_b_vth0_diff_6 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_6 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.644e+05+nmos_rf_base_m4_b_vsat_diff_6 |
| + ua = -2.152e-09+nmos_rf_base_m4_b_ua_diff_6 |
| + ub = 2.44e-18+nmos_rf_base_m4_b_ub_diff_6 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_6 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0354+nmos_rf_base_m4_b_u0_diff_6 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_6 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_6 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_6 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_6 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2313+nmos_rf_base_m4_b_voff_diff_6 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 2.257+nmos_rf_base_m4_b_nfactor_diff_6 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.204 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1589 |
| + pdiblc1 = 0.1976 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03074 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2112+nmos_rf_base_m4_b_kt1_diff_6 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.069e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 1e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.7e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.81e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N5P05XP18M4X1_iccap.pm N5P05XP18M4X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:51:47 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N5P05XP18M4X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N5P05XP18M4X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 7: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 1.75e-07 lmax = 1.85E-07 wmin = 5.045E-06 wmax = 5.055E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.035e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 2.2e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.606+nmos_rf_base_m4_b_vth0_diff_7 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_7 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.594e+05+nmos_rf_base_m4_b_vsat_diff_7 |
| + ua = -2.162e-09+nmos_rf_base_m4_b_ua_diff_7 |
| + ub = 2.461e-18+nmos_rf_base_m4_b_ub_diff_7 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_7 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0314+nmos_rf_base_m4_b_u0_diff_7 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_7 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_7 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_7 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_7 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2313+nmos_rf_base_m4_b_voff_diff_7 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.76+nmos_rf_base_m4_b_nfactor_diff_7 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.204 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1208 |
| + pdiblc1 = 0.1462 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03074 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2112+nmos_rf_base_m4_b_kt1_diff_7 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.25e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.269e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.4e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 5e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 6e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.7e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.81e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| // ***** |
| |
| // BSIMTran Version 0.1.24, Created on 4-26-2002 |
| // Username: hai |
| // Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnmos_rf_base N5P05XP25M4X1_iccap.pm N5P05XP25M4X1_bsimtranoutput.pm |
| // Working Directory: /home/hai/models/s8/s8dia/models.3.2/nmos/combined/beta2 |
| // Time: Fri Jan 11 11:52:07 2008 |
| // Rule File: nmos_bsim4_RF.rf |
| // Output File: N5P05XP25M4X1_bsimtranoutput.pm |
| // Input Files: |
| // (1) N5P05XP25M4X1_iccap.pm |
| // copyright, Cypress Semiconductor, 2002 |
| // BSIM3.V3 NMOS Model |
| |
| 8: type=n |
| // |
| // DC IV MOS PARAMETERS |
| // |
| + lmin = 2.45e-07 lmax = 2.55E-07 wmin = 5.045E-06 wmax = 5.055E-06 |
| + level = 54 |
| + tnom = 30 |
| + version = 4.5 |
| + toxm = 4.148e-09 |
| + xj = 1.5e-07 |
| + lln = 1 |
| + lwn = 1 |
| + wln = 1 |
| + wwn = 1 |
| + lint = -2.035e-08+nmos_rf_base_b_lint_diff |
| + ll = 0 |
| + lw = 0 |
| + lwl = 0 |
| + wint = 9.181e-09+nmos_rf_base_b_wint_diff |
| + wl = 0 |
| + ww = 0 |
| + wwl = 0 |
| + xl = 0 |
| + xw = 0 |
| + mobmod = 0 |
| + binunit = 2 |
| + dwg = 0 |
| + dwb = 0 |
| // NEW BSIM4 Parameters(Model Selectors) |
| + igcmod = 0 |
| + igbmod = 0 |
| + rgatemod = 3 |
| + rbodymod = 1 |
| + trnqsmod = 0 |
| + acnqsmod = 0 |
| + fnoimod = 1 |
| + tnoimod = 1 |
| + permod = 1 |
| + geomod = 0 |
| + rdsmod = 1 |
| + tempmod = 0 |
| // ****** |
| // NEW BSIM4 Parameters(4.4 Version) |
| + lintnoi = -1.0e-07 |
| + vfbsdoff = 0 |
| + lambda = 0 |
| + vtl = 2e+05 |
| + lc = 5e-09 |
| + xn = 3 |
| + rnoia = 0.94 |
| + rnoib = 0.26 |
| + tnoia = 1.5e+07 |
| + tnoib = 9.9e+06 |
| // NEW BSIM4 Parameters(Process Parameters) |
| + epsrox = 3.9 |
| + toxe = 4.148e-09*nmos_rf_base_b_toxe_mult + nmos_rf_b_toxe_slope_spectre*(4.148e-09*nmos_rf_base_b_toxe_mult*(nmos_rf_b_toxe_slope/sqrt(l*w*m))) |
| + dtox = 0 |
| + ndep = 2.2e+17 |
| + nsd = 1e+20 |
| + rshg = 49.2+nmos_rf_base_b_rshg_diff |
| // *** |
| + rsh = 1 |
| // |
| // THRESHOLD VOLTAGE PARAMETERS |
| // |
| + vth0 = 0.59+nmos_rf_base_m4_b_vth0_diff_8 + nmos_rf_b_vth0_slope_spectre*(nmos_rf_b_vth0_slope/sqrt(l*w*m)) |
| + k1 = 0.5415 |
| + k2 = -0.07197+nmos_rf_base_m4_b_k2_diff_8 |
| + k3 = 3 |
| + dvt0 = 0 |
| + dvt1 = 0.53 |
| + dvt2 = -0.032 |
| + dvt0w = -0.2864 |
| + dvt1w = 1.671e+06 |
| + dvt2w = -0.3571 |
| + w0 = 0 |
| + k3b = 1.48 |
| // NEW BSIM4 Parameters for Level 54 |
| + phin = 0 |
| + lpe0 = 1.342e-07 |
| + lpeb = -7.224e-08 |
| + vbm = -3 |
| + dvtp0 = 0 |
| + dvtp1 = 0 |
| // |
| // MOBILITY PARAMETERS |
| // |
| + vsat = 1.524e+05+nmos_rf_base_m4_b_vsat_diff_8 |
| + ua = -2.102e-09+nmos_rf_base_m4_b_ua_diff_8 |
| + ub = 2.451e-18+nmos_rf_base_m4_b_ub_diff_8 |
| + uc = 7.917e-11 |
| + rdsw = 98.95+nmos_rf_base_m4_b_rdsw_diff_8 |
| + prwb = 0.008 |
| + prwg = 0 |
| + wr = 1 |
| + u0 = 0.0274+nmos_rf_base_m4_b_u0_diff_8 |
| + a0 = 1.471+nmos_rf_base_m4_b_a0_diff_8 |
| + keta = 0.1378 |
| + a1 = 0 |
| + a2 = 0.4239 |
| + ags = 0.5074+nmos_rf_base_m4_b_ags_diff_8 |
| + b0 = -1.502e-07+nmos_rf_base_m4_b_b0_diff_8 |
| + b1 = 1.902e-09+nmos_rf_base_m4_b_b1_diff_8 |
| // NEW BSIM4 Parameters(Mobility Parameters) |
| + eu = 1.67 |
| + rdswmin = 0 |
| + rdw = 98.95 |
| + rdwmin = 0 |
| + rsw = 98.95 |
| + rswmin = 0 |
| // **** |
| // |
| // SUBTHRESHOLD CURRENT PARAMETERS |
| // |
| + voff = -0.2313+nmos_rf_base_m4_b_voff_diff_8 + nmos_rf_b_voff_slope_spectre*(nmos_rf_b_voff_slope/sqrt(l*w*m)) |
| + nfactor = 1.76+nmos_rf_base_m4_b_nfactor_diff_8 |
| + up = 0 |
| + ud = 0 |
| + lp = 1 |
| + tvfbsdoff = 0 |
| + tvoff = 0 |
| + cit = 0 |
| + cdsc = 0 |
| + cdscb = 0 |
| + cdscd = 0 |
| + eta0 = 0.204 |
| + etab = 0.0001546 |
| + dsub = 0.4657 |
| // NEW BSIM4 Parameters(Sub-threshold parameters) |
| + voffl = 5.82e-09 |
| + minv = 0 |
| // **** |
| // |
| // ROUT PARAMETERS |
| // |
| + pclm = 0.1208 |
| + pdiblc1 = 0.1287 |
| + pdiblc2 = 0 |
| + pdiblcb = -1 |
| + drout = 0.2457 |
| + pscbe1 = 3.295e+08 |
| + pscbe2 = 2e-06 |
| + pvag = 0 |
| + delta = 0.03074 |
| + alpha0 = 1.21e-07 |
| + alpha1 = 0.8767 |
| + beta0 = 14.77 |
| // NEW BSIM4 Parameters(ROUT Parameters) |
| + fprout = 0 |
| + pdits = 0 |
| + pditsl = 0 |
| + pditsd = 0 |
| // *** |
| // NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| + agidl = 0 |
| + bgidl = 2.3e+09 |
| + cgidl = 0.5 |
| + egidl = 0.8 |
| // *** |
| // NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| + aigbacc = 1 |
| + bigbacc = 0 |
| + cigbacc = 0 |
| + nigbacc = 0 |
| + aigbinv = 0.35 |
| + bigbinv = 0.03 |
| + cigbinv = 0.006 |
| + eigbinv = 1.1 |
| + nigbinv = 0 |
| + aigc = 0.43 |
| + bigc = 0.054 |
| + cigc = 0.075 |
| + nigc = 0 |
| + aigsd = 0.43 |
| + bigsd = 0.054 |
| + cigsd = 0.075 |
| + dlcig = 0 |
| + poxedge = 1 |
| + pigcd = 1 |
| + ntox = 1 |
| + toxref = 4.148e-09 |
| // **** |
| // |
| // TEMPERATURE EFFECTS PARAMETERS |
| // |
| + kt1 = -0.2112+nmos_rf_base_m4_b_kt1_diff_8 |
| + kt2 = -0.02437 |
| + at = 7.202e+04 |
| + ute = -1.681 |
| + ua1 = 6.012e-10 |
| + ub1 = -7.32e-19 |
| + uc1 = 1.09e-12 |
| + kt1l = 0 |
| + prt = 0 |
| // NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| + xrcrg1 = 10 |
| + xrcrg2 = 2 |
| + rbpb = 400*nmos_rf_base_b_rbpb_mult |
| + rbpd = 0.001 |
| + rbps = 0.001 |
| + rbdb = 1e+05 |
| + rbsb = 1e+05 |
| + gbmin = 1e-12 |
| // *** |
| // NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| + noia = 2.5e+42 |
| + noib = 0.0 |
| + noic = 0.0 |
| + em = 4.1e+07 |
| + af = 1 |
| + ef = 0.84 |
| + kf = 0 |
| + ntnoi = 1 |
| // **** |
| // NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| + dmcg = 0 |
| + dmcgt = 0 |
| + dmdg = 0 |
| + xgw = 1.3e-06+nmos_rf_base_b_xgw_diff |
| + ngcon = 2 |
| // *** |
| // |
| // DIODE DC IV PARAMTERS |
| // |
| // NEW BSIM4 Parameters(DIODE DC IV parameters) |
| + diomod = 1 |
| + njs = 1.293 |
| + jss = 0.00275 |
| + jsws = 6e-10 |
| + xtis = 2 |
| + bvs = 11.9 |
| + xjbvs = 1 |
| + ijthsrev = 0.1 |
| + ijthsfwd = 0.1 |
| // |
| // DIODE and FET CAPACITANCE PARAMETERS |
| // |
| + tpb = 0.001229 |
| + tpbsw = 0 |
| + tpbswg = 0 |
| + tcj = 0.000792 |
| + tcjsw = 1e-05 |
| + tcjswg = 0 |
| + cgdo = 3.569e-10*nmos_rf_base_b_overlap_mult |
| + cgso = 3.4e-10*nmos_rf_base_b_overlap_mult |
| + cgbo = 0 |
| + capmod = 2 |
| + xpart = 0 |
| + cgsl = 5e-11*nmos_rf_base_b_overlap_mult |
| + cgdl = 8e-11*nmos_rf_base_b_overlap_mult |
| + cf = 1e-11 |
| + clc = 1.2e-08 |
| + cle = 1.9 |
| + dlc = 2.3e-08+nmos_rf_base_b_dlc_diff+nmos_rf_base_dlc_rotweak |
| + dwc = 0+nmos_rf_base_b_dwc_diff |
| + vfbcv = -1 |
| + acde = 0.3801 |
| + moin = 23.81 |
| + noff = 1 |
| + voffcv = -0.06 |
| + ngate = 1e+23 |
| + lwc = 0 |
| + llc = 0 |
| + lwlc = 0 |
| + wlc = 0 |
| + wwc = 0 |
| + wwlc = 0 |
| // NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| + ckappas = 0.6 |
| + cjs = 0.0024*nmos_rf_base_b_ajunction_mult |
| + mjs = 0.322 |
| + pbs = 0.9877 |
| + cjsws = 2.013e-10*nmos_rf_base_b_pjunction_mult |
| + mjsws = 0.001 |
| + pbsws = 0.4 |
| + cjswgs = 2.01e-10*nmos_rf_base_b_pjunction_mult |
| + mjswgs = 0.1 |
| + pbswgs = 0.9964 |
| } |
| ends nmos_rf_base_m4_b_w5 |
| // ***** |
| |
