blob: 6ba9e4aead23ed1a23bf7096446457b0b80efd8c [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran pmos_bsim4.rf pmos -p -nphighvt phighvt_modelnamechanged.pm3 phighvt_ov.pm PhDIV1.mod phighvt_cv.pmd phighvt_bsimtranoutput.pm3
* Working Directory: /home/hai/models/s8/s8tee/models.3.1/phighvt/combined
* Time: Mon Jun 11 11:31:36 2007
* Rule File: pmos_bsim4.rf
* Output File: phighvt_bsimtranoutput.pm3
* Input Files:
* (1) phighvt_modelnamechanged.pm3
* (2) phighvt_ov.pm
* (3) PhDIV1.mod
* (4) phighvt_cv.pmd
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
*New CAD sizing of 17 nm longer gate for leakage, only for minL
.subckt phighvt d g s b l=100.0u w=100.0u ad=0 as=0 pd=0 ps=0 nrd=1 nrs=1 rdc=0.0 rsc=0.0 m=1 dtemp=0 nf=1 geo=0.0 delvto=0.0 sa=0.0 sb=0.0 sd=0.0
.model phighvt_mod.0 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.255e-06 wmax = 1.265e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.099+phighvt_vth0_diff_0' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0793014
+k2 = '-0.20044131+phighvt_k2_diff_0'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '83438+phighvt_vsat_diff_0'
+ua = '-2.1868798e-009+phighvt_ua_diff_0'
+ub = '1.7722077e-018+phighvt_ub_diff_0'
+uc = -1.6417456e-011
+rdsw = '531.92+phighvt_rdsw_diff_0'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.002956+phighvt_u0_diff_0'
+a0 = '0.65888+phighvt_a0_diff_0'
+keta = '-0.047528+phighvt_keta_diff_0'
+a1 = 0
+a2 = 0.65104277
+ags = '1.25+phighvt_ags_diff_0'
+b0 = '0+phighvt_b0_diff_0'
+b1 = '0+phighvt_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.2637777+phighvt_voff_diff_0' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6513386+phighvt_nfactor_diff_0' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_0'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.16306432+phighvt_eta0_diff_0'
+etab = -0.026662586
+dsub = 0.35818196
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.72203134+phighvt_pclm_diff_0'
+pdiblc1 = 0.38441605
+pdiblc2 = 0.0078574606
+pdiblcb = -0.225
+drout = 0.63135838
+pscbe1 = 8e+008
+pscbe2 = 9.2312485e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.4343701
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_0'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_0'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.6478246e-009+phighvt_agidl_diff_0'
+bgidl = '1e009+phighvt_bgidl_diff_0'
+cgidl = '300+phighvt_cgidl_diff_0'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.54438+phighvt_kt1_diff_0'
+kt2 = -0.053141
+at = 29266
+ute = -0.279
+ua1 = 4.3057e-010
+ub1 = -1.4175e-019
+uc1 = -5.2391e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.1 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.675e-06 wmax = 1.685e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0955+phighvt_vth0_diff_1' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0888183
+k2 = '-0.20196049+phighvt_k2_diff_1'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '87563+phighvt_vsat_diff_1'
+ua = '-2.1838377e-009+phighvt_ua_diff_1'
+ub = '1.8080364e-018+phighvt_ub_diff_1'
+uc = -1.1831763e-011
+rdsw = '531.92+phighvt_rdsw_diff_1'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.003135+phighvt_u0_diff_1'
+a0 = '0.65345+phighvt_a0_diff_1'
+keta = '-0.017748+phighvt_keta_diff_1'
+a1 = 0
+a2 = 0.69867026
+ags = '1.25+phighvt_ags_diff_1'
+b0 = '2.1073e-024+phighvt_b0_diff_1'
+b1 = '0+phighvt_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.24702924+phighvt_voff_diff_1' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_1' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_1'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.15222921+phighvt_eta0_diff_1'
+etab = -0.045415713
+dsub = 0.2958736
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.66659106+phighvt_pclm_diff_1'
+pdiblc1 = 0.16607535
+pdiblc2 = 0.0040091595
+pdiblcb = -0.075
+drout = 1
+pscbe1 = 7.9962646e+008
+pscbe2 = 7.7649067e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.2550319
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_1'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_1'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '6.7051481e-010+phighvt_agidl_diff_1'
+bgidl = '1e009+phighvt_bgidl_diff_1'
+cgidl = '300+phighvt_cgidl_diff_1'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.54438+phighvt_kt1_diff_1'
+kt2 = -0.053141
+at = 29266
+ute = -0.279
+ua1 = 4.7797e-010
+ub1 = -1.4175e-019
+uc1 = -5.2391e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.2 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.06+phighvt_vth0_diff_2' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.51618769
+k2 = '-0.00083146984+phighvt_k2_diff_2'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '47380+phighvt_vsat_diff_2'
+ua = '-8.5137452e-010+phighvt_ua_diff_2'
+ub = '6.7844555e-019+phighvt_ub_diff_2'
+uc = -6.4729555e-011
+rdsw = '531.92+phighvt_rdsw_diff_2'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0067181+phighvt_u0_diff_2'
+a0 = '0.97582+phighvt_a0_diff_2'
+keta = '-0.013695+phighvt_keta_diff_2'
+a1 = 0
+a2 = 1
+ags = '0.60209+phighvt_ags_diff_2'
+b0 = '0+phighvt_b0_diff_2'
+b1 = '0+phighvt_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16525691+phighvt_voff_diff_2' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6996765+phighvt_nfactor_diff_2' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_2'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.22+phighvt_eta0_diff_2'
+etab = -0.82588402
+dsub = 0.77677847
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.80609743+phighvt_pclm_diff_2'
+pdiblc1 = 0.039
+pdiblc2 = 0.00043
+pdiblcb = -0.025
+drout = 1
+pscbe1 = 7.8630226e+008
+pscbe2 = 9.1767556e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 7.6682293
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_2'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_2'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.0805694e-010+phighvt_agidl_diff_2'
+bgidl = '1e009+phighvt_bgidl_diff_2'
+cgidl = '300+phighvt_cgidl_diff_2'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.47906474+phighvt_kt1_diff_2'
+kt2 = -0.048559181
+at = 61761.743
+ute = -1.0481598
+ua1 = -4.3040399e-010
+ub1 = 8.9488555e-019
+uc1 = 6.6918782e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 2.75e-06
+sbref = 2.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.3 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.09+phighvt_vth0_diff_3' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.43605257
+k2 = '0.032821892+phighvt_k2_diff_3'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '53438+phighvt_vsat_diff_3'
+ua = '-4.2142258e-010+phighvt_ua_diff_3'
+ub = '5.0507813e-019+phighvt_ub_diff_3'
+uc = -6.9850429e-011
+rdsw = '531.92+phighvt_rdsw_diff_3'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0088976+phighvt_u0_diff_3'
+a0 = '1.1633+phighvt_a0_diff_3'
+keta = '-0.012264+phighvt_keta_diff_3'
+a1 = 0
+a2 = 0.8
+ags = '0.39463+phighvt_ags_diff_3'
+b0 = '0+phighvt_b0_diff_3'
+b1 = '0+phighvt_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17697341+phighvt_voff_diff_3' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8787862+phighvt_nfactor_diff_3' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_3'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0005+phighvt_eta0_diff_3'
+etab = -0.00049875119
+dsub = 0.26129899
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.63260008+phighvt_pclm_diff_3'
+pdiblc1 = 0.39
+pdiblc2 = 0.00043
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 7.9224047e+008
+pscbe2 = 9.3515819e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 6.7757668
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_3'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_3'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.3029923e-010+phighvt_agidl_diff_3'
+bgidl = '1e009+phighvt_bgidl_diff_3'
+cgidl = '300+phighvt_cgidl_diff_3'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.46892+phighvt_kt1_diff_3'
+kt2 = -0.052362
+at = 79192
+ute = -0.067643
+ua1 = 2.8149e-009
+ub1 = -1.658e-018
+uc1 = -2.9687e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.4 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.085+phighvt_vth0_diff_4' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.43941017
+k2 = '0.032916976+phighvt_k2_diff_4'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '53438+phighvt_vsat_diff_4'
+ua = '-5.5731408e-010+phighvt_ua_diff_4'
+ub = '5.6552327e-019+phighvt_ub_diff_4'
+uc = -7.2710309e-011
+rdsw = '531.92+phighvt_rdsw_diff_4'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0082748+phighvt_u0_diff_4'
+a0 = '1.1265+phighvt_a0_diff_4'
+keta = '-0.0028979+phighvt_keta_diff_4'
+a1 = 0
+a2 = 0.8
+ags = '0.2984+phighvt_ags_diff_4'
+b0 = '0+phighvt_b0_diff_4'
+b1 = '0+phighvt_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17780505+phighvt_voff_diff_4' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.2671741+phighvt_nfactor_diff_4' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_4'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_4'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.041787811+phighvt_pclm_diff_4'
+pdiblc1 = 0.39
+pdiblc2 = 0.0020262295
+pdiblcb = -0.061388807
+drout = 0.56
+pscbe1 = 3.7518755e+008
+pscbe2 = 2.7835156e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.110948
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_4'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_4'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.9969637e-010+phighvt_agidl_diff_4'
+bgidl = '1e009+phighvt_bgidl_diff_4'
+cgidl = '300+phighvt_cgidl_diff_4'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.47523+phighvt_kt1_diff_4'
+kt2 = -0.056301
+at = 90676
+ute = -0.1
+ua1 = 3.0678e-009
+ub1 = -2.2467e-018
+uc1 = -5.8909e-012
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.5 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0869+phighvt_vth0_diff_5' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.44751769
+k2 = '0.03180011+phighvt_k2_diff_5'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '160310+phighvt_vsat_diff_5'
+ua = '-6.9182204e-010+phighvt_ua_diff_5'
+ub = '6.2220111e-019+phighvt_ub_diff_5'
+uc = -7.1776909e-011
+rdsw = '531.92+phighvt_rdsw_diff_5'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0074657+phighvt_u0_diff_5'
+a0 = '1.2929+phighvt_a0_diff_5'
+keta = '-0.0018702+phighvt_keta_diff_5'
+a1 = 0
+a2 = 0.8
+ags = '0.20339+phighvt_ags_diff_5'
+b0 = '0+phighvt_b0_diff_5'
+b1 = '0+phighvt_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16977492+phighvt_voff_diff_5' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.5535929+phighvt_nfactor_diff_5' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_5'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_5'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.14095898+phighvt_pclm_diff_5'
+pdiblc1 = 0.39
+pdiblc2 = 0.00031929802
+pdiblcb = -0.15511953
+drout = 0.56
+pscbe1 = 7.9995125e+008
+pscbe2 = 5.4254628e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 6.2785893
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_5'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_5'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '4.4509773e-010+phighvt_agidl_diff_5'
+bgidl = '1e009+phighvt_bgidl_diff_5'
+cgidl = '300+phighvt_cgidl_diff_5'
+egidl = 0.88544965
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.4407715+phighvt_kt1_diff_5'
+kt2 = -0.052358472
+at = 0
+ute = -0.13226612
+ua1 = 1.8227243e-009
+ub1 = -7.1588888e-019
+uc1 = -8.7612717e-012
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.6 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0779+phighvt_vth0_diff_6' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0780173
+k2 = '-0.18691096+phighvt_k2_diff_6'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '79622+phighvt_vsat_diff_6'
+ua = '-2.368583e-009+phighvt_ua_diff_6'
+ub = '1.9765955e-018+phighvt_ub_diff_6'
+uc = 1.6311334e-014
+rdsw = '531.92+phighvt_rdsw_diff_6'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0024007+phighvt_u0_diff_6'
+a0 = '0.91681+phighvt_a0_diff_6'
+keta = '-0.00052252+phighvt_keta_diff_6'
+a1 = 0
+a2 = 0.80650859
+ags = '1.25+phighvt_ags_diff_6'
+b0 = '0+phighvt_b0_diff_6'
+b1 = '0+phighvt_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.2174285+phighvt_voff_diff_6' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.0490306+phighvt_nfactor_diff_6' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_6'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.20189086+phighvt_eta0_diff_6'
+etab = -0.011570413
+dsub = 0.30255915
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62222713+phighvt_pclm_diff_6'
+pdiblc1 = 0.15311682
+pdiblc2 = 0.0028344223
+pdiblcb = -0.3375
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 8.337696e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.2294593
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_6'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_6'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.3637136e-010+phighvt_agidl_diff_6'
+bgidl = '1e009+phighvt_bgidl_diff_6'
+cgidl = '300+phighvt_cgidl_diff_6'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.56627+phighvt_kt1_diff_6'
+kt2 = -0.096259
+at = 22259
+ute = -0.005
+ua1 = 7.4358e-010
+ub1 = -4.726e-019
+uc1 = -2.1939e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.7 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.042+phighvt_vth0_diff_7' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.94407842
+k2 = '-0.14337103+phighvt_k2_diff_7'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '104810+phighvt_vsat_diff_7'
+ua = '-2.0188743e-009+phighvt_ua_diff_7'
+ub = '1.650047e-018+phighvt_ub_diff_7'
+uc = -9.8303269e-012
+rdsw = '531.92+phighvt_rdsw_diff_7'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0031722+phighvt_u0_diff_7'
+a0 = '0.91559+phighvt_a0_diff_7'
+keta = '-0.050899+phighvt_keta_diff_7'
+a1 = 0
+a2 = 0.5695275
+ags = '1.25+phighvt_ags_diff_7'
+b0 = '0+phighvt_b0_diff_7'
+b1 = '0+phighvt_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.2327165+phighvt_voff_diff_7' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_7' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_7'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.40771457+phighvt_eta0_diff_7'
+etab = -6.25e-006
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.68363325+phighvt_pclm_diff_7'
+pdiblc1 = 0.39829528
+pdiblc2 = 0.0099382197
+pdiblcb = -0.13364569
+drout = 0.48956724
+pscbe1 = 8e+008
+pscbe2 = 6.6568323e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.2562888
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_7'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_7'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2.2466963e-010+phighvt_agidl_diff_7'
+bgidl = '1e009+phighvt_bgidl_diff_7'
+cgidl = '300+phighvt_cgidl_diff_7'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.53838+phighvt_kt1_diff_7'
+kt2 = -0.043005
+at = 51186
+ute = -0.2477
+ua1 = 1.9461e-010
+ub1 = 3.6838e-019
+uc1 = -3.5153e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.1e-06
+sbref = 1.1e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.8 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0442+phighvt_vth0_diff_8' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.53635572
+k2 = '0.0035773373+phighvt_k2_diff_8'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '99914+phighvt_vsat_diff_8'
+ua = '-1.397948e-009+phighvt_ua_diff_8'
+ub = '1.3291225e-018+phighvt_ub_diff_8'
+uc = 4.7630651e-014
+rdsw = '531.92+phighvt_rdsw_diff_8'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0061847+phighvt_u0_diff_8'
+a0 = '0.5931+phighvt_a0_diff_8'
+keta = '-0.033312+phighvt_keta_diff_8'
+a1 = 0
+a2 = 0.8
+ags = '1.5276+phighvt_ags_diff_8'
+b0 = '0+phighvt_b0_diff_8'
+b1 = '0+phighvt_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.18912915+phighvt_voff_diff_8' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8679711+phighvt_nfactor_diff_8' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_8'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_8'
+etab = -6.25e-006
+dsub = 0.81406049
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.63858212+phighvt_pclm_diff_8'
+pdiblc1 = 0.40879522
+pdiblc2 = 0.009193408
+pdiblcb = -0.21648732
+drout = 0.48906552
+pscbe1 = 7.9997105e+008
+pscbe2 = 9.1548868e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.9566797
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_8'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_8'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_8'
+bgidl = '1.2603679e009+phighvt_bgidl_diff_8'
+cgidl = '300+phighvt_cgidl_diff_8'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.51740568+phighvt_kt1_diff_8'
+kt2 = -0.052983574
+at = 72057.362
+ute = -0.86411948
+ua1 = 2.9041801e-010
+ub1 = -1.7398229e-019
+uc1 = -1.0365078e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.25e-06
+sbref = 1.24e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.9 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.052+phighvt_vth0_diff_9' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.516034
+k2 = '0.0081959434+phighvt_k2_diff_9'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '55200+phighvt_vsat_diff_9'
+ua = '-1.2925874e-009+phighvt_ua_diff_9'
+ub = '1.0037169e-018+phighvt_ub_diff_9'
+uc = -2.9729077e-011
+rdsw = '531.92+phighvt_rdsw_diff_9'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0052584+phighvt_u0_diff_9'
+a0 = '0.71649+phighvt_a0_diff_9'
+keta = '-0.037718+phighvt_keta_diff_9'
+a1 = 0
+a2 = 0.99008978
+ags = '1.25+phighvt_ags_diff_9'
+b0 = '0+phighvt_b0_diff_9'
+b1 = '0+phighvt_b1_diff_9'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16535562+phighvt_voff_diff_9' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_9' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_9'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_9'
+etab = -0.000625
+dsub = 0.26254854
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.027845921+phighvt_pclm_diff_9'
+pdiblc1 = 0.011000287
+pdiblc2 = 4.0135447e-005
+pdiblcb = -0.019529148
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 9.32815e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.7515738
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_9'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_9'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.9256988e-010+phighvt_agidl_diff_9'
+bgidl = '1e009+phighvt_bgidl_diff_9'
+cgidl = '300+phighvt_cgidl_diff_9'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.53807+phighvt_kt1_diff_9'
+kt2 = -0.032665
+at = 35091
+ute = -0.19855
+ua1 = 2.5665e-009
+ub1 = -2.4386e-018
+uc1 = -1.9533e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.75e-06
+sbref = 1.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.10 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0803+phighvt_vth0_diff_10' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.4496415
+k2 = '0.031927367+phighvt_k2_diff_10'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '66641+phighvt_vsat_diff_10'
+ua = '-7.3086488e-010+phighvt_ua_diff_10'
+ub = '6.8083017e-019+phighvt_ub_diff_10'
+uc = -4.8274863e-011
+rdsw = '531.92+phighvt_rdsw_diff_10'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0076583+phighvt_u0_diff_10'
+a0 = '1.1973+phighvt_a0_diff_10'
+keta = '-0.014969+phighvt_keta_diff_10'
+a1 = 0
+a2 = 0.8
+ags = '0.57991+phighvt_ags_diff_10'
+b0 = '0+phighvt_b0_diff_10'
+b1 = '0+phighvt_b1_diff_10'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.1661565+phighvt_voff_diff_10' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6351533+phighvt_nfactor_diff_10' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_10'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.21899552+phighvt_eta0_diff_10'
+etab = -0.83278175
+dsub = 0.73022877
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62281245+phighvt_pclm_diff_10'
+pdiblc1 = 0.37098377
+pdiblc2 = 0.00043
+pdiblcb = -0.025
+drout = 0.99038333
+pscbe1 = 8e+008
+pscbe2 = 9.2877187e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.8668746
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_10'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_10'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_10'
+bgidl = '1.2385083e009+phighvt_bgidl_diff_10'
+cgidl = '300+phighvt_cgidl_diff_10'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.47253+phighvt_kt1_diff_10'
+kt2 = -0.037371
+at = 102660
+ute = 0
+ua1 = 2.4041e-009
+ub1 = -1.358e-018
+uc1 = -9.6365e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 2.75e-06
+sbref = 2.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.11 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0892+phighvt_vth0_diff_11' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.44092059
+k2 = '0.036899354+phighvt_k2_diff_11'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '53438+phighvt_vsat_diff_11'
+ua = '-3.9144149e-010+phighvt_ua_diff_11'
+ub = '3.3373675e-019+phighvt_ub_diff_11'
+uc = -8.5064049e-011
+rdsw = '531.92+phighvt_rdsw_diff_11'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0083003+phighvt_u0_diff_11'
+a0 = '1.1713+phighvt_a0_diff_11'
+keta = '-0.0087647+phighvt_keta_diff_11'
+a1 = 0
+a2 = 0.8
+ags = '0.3386+phighvt_ags_diff_11'
+b0 = '0+phighvt_b0_diff_11'
+b1 = '0+phighvt_b1_diff_11'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16593881+phighvt_voff_diff_11' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.2246948+phighvt_nfactor_diff_11' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_11'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_11'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.33031978+phighvt_pclm_diff_11'
+pdiblc1 = 0.39
+pdiblc2 = 0.000215
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 2.3783325e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 7.8248162
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_11'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_11'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_11'
+bgidl = '1.253884e009+phighvt_bgidl_diff_11'
+cgidl = '300+phighvt_cgidl_diff_11'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.45841675+phighvt_kt1_diff_11'
+kt2 = -0.048952895
+at = 83689.934
+ute = 0
+ua1 = 2.6153957e-009
+ub1 = -1.4430041e-018
+uc1 = 2.893912e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.12 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.066+phighvt_vth0_diff_12' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.51955703
+k2 = '0.0083255984+phighvt_k2_diff_12'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '99197+phighvt_vsat_diff_12'
+ua = '-9.2817103e-010+phighvt_ua_diff_12'
+ub = '6.1068677e-019+phighvt_ub_diff_12'
+uc = -7.5981588e-011
+rdsw = '531.92+phighvt_rdsw_diff_12'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0057978+phighvt_u0_diff_12'
+a0 = '1.606+phighvt_a0_diff_12'
+keta = '-0.025019+phighvt_keta_diff_12'
+a1 = 0
+a2 = 0.8
+ags = '0.43619+phighvt_ags_diff_12'
+b0 = '0+phighvt_b0_diff_12'
+b1 = '0+phighvt_b1_diff_12'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17804625+phighvt_voff_diff_12' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.1114012+phighvt_nfactor_diff_12' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_12'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_12'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.6328125+phighvt_pclm_diff_12'
+pdiblc1 = 0.39
+pdiblc2 = 0.000215
+pdiblcb = -0.0026177282
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 9.5686423e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 6.6922304
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_12'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_12'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_12'
+bgidl = '1.1982942e009+phighvt_bgidl_diff_12'
+cgidl = '300+phighvt_cgidl_diff_12'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.40079+phighvt_kt1_diff_12'
+kt2 = -0.044551
+at = 179410
+ute = -0.82248
+ua1 = -3.3779e-010
+ub1 = 8.7001e-019
+uc1 = 6.064e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.13 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0909+phighvt_vth0_diff_13' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.4858803
+k2 = '0.018477076+phighvt_k2_diff_13'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '160312.5+phighvt_vsat_diff_13'
+ua = '-2.7171319e-010+phighvt_ua_diff_13'
+ub = '1.9996982e-019+phighvt_ub_diff_13'
+uc = -1.0920239e-010
+rdsw = '531.92+phighvt_rdsw_diff_13'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0082068126+phighvt_u0_diff_13'
+a0 = '1.6405626+phighvt_a0_diff_13'
+keta = '-0.031235975+phighvt_keta_diff_13'
+a1 = 0
+a2 = 0.8
+ags = '0.44214755+phighvt_ags_diff_13'
+b0 = '0+phighvt_b0_diff_13'
+b1 = '0+phighvt_b1_diff_13'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17649492+phighvt_voff_diff_13' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.2740089+phighvt_nfactor_diff_13' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_13'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_13'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.060146165+phighvt_pclm_diff_13'
+pdiblc1 = 0.39
+pdiblc2 = 0.00028698955
+pdiblcb = -0.0015303226
+drout = 0.56
+pscbe1 = 7.902596e+008
+pscbe2 = 9.3605355e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_13'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_13'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.4593183e-010+phighvt_agidl_diff_13'
+bgidl = '1e009+phighvt_bgidl_diff_13'
+cgidl = '300+phighvt_cgidl_diff_13'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.45554+phighvt_kt1_diff_13'
+kt2 = -0.037961
+at = 0
+ute = -0.32969
+ua1 = 2.4991e-009
+ub1 = -1.6808e-018
+uc1 = 4.2588e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.14 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.104+phighvt_vth0_diff_14' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0855795
+k2 = '-0.20531331+phighvt_k2_diff_14'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '77969+phighvt_vsat_diff_14'
+ua = '-2.2584686e-009+phighvt_ua_diff_14'
+ub = '1.8337483e-018+phighvt_ub_diff_14'
+uc = -9.8065539e-012
+rdsw = '531.92+phighvt_rdsw_diff_14'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0029407+phighvt_u0_diff_14'
+a0 = '0.90036+phighvt_a0_diff_14'
+keta = '-0.010637+phighvt_keta_diff_14'
+a1 = 0
+a2 = 0.761054
+ags = '1.25+phighvt_ags_diff_14'
+b0 = '0+phighvt_b0_diff_14'
+b1 = '0+phighvt_b1_diff_14'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.23312602+phighvt_voff_diff_14' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_14' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_14'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.21998134+phighvt_eta0_diff_14'
+etab = -0.00044348984
+dsub = 0.2918116
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62863877+phighvt_pclm_diff_14'
+pdiblc1 = 0.16025935
+pdiblc2 = 0.0035027364
+pdiblcb = -1.1390625
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 9.3001017e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.0394624
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_14'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_14'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.3101263e-010+phighvt_agidl_diff_14'
+bgidl = '1e009+phighvt_bgidl_diff_14'
+cgidl = '300+phighvt_cgidl_diff_14'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.53838+phighvt_kt1_diff_14'
+kt2 = -0.053141
+at = 21076
+ute = -0.279
+ua1 = 4.1797e-010
+ub1 = -1.4175e-019
+uc1 = -2.6191e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.15 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0669+phighvt_vth0_diff_15' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.96142823
+k2 = '-0.14861287+phighvt_k2_diff_15'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '85448+phighvt_vsat_diff_15'
+ua = '-2.0849956e-009+phighvt_ua_diff_15'
+ub = '1.6536446e-018+phighvt_ub_diff_15'
+uc = -8.324554e-012
+rdsw = '531.92+phighvt_rdsw_diff_15'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0032088+phighvt_u0_diff_15'
+a0 = '0.7581+phighvt_a0_diff_15'
+keta = '-0.073052+phighvt_keta_diff_15'
+a1 = 0
+a2 = 0.66287453
+ags = '1.25+phighvt_ags_diff_15'
+b0 = '0+phighvt_b0_diff_15'
+b1 = '0+phighvt_b1_diff_15'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20019295+phighvt_voff_diff_15' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8608971+phighvt_nfactor_diff_15' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_15'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_15'
+etab = -0.000625
+dsub = 0.56230341
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.73469042+phighvt_pclm_diff_15'
+pdiblc1 = 0.46153647
+pdiblc2 = 0.0098794151
+pdiblcb = -0.22461631
+drout = 0.68441351
+pscbe1 = 8e+008
+pscbe2 = 9.3199817e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.9463947
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_15'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_15'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '3.2055002e-010+phighvt_agidl_diff_15'
+bgidl = '1e009+phighvt_bgidl_diff_15'
+cgidl = '300+phighvt_cgidl_diff_15'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.51588+phighvt_kt1_diff_15'
+kt2 = -0.048792
+at = 9870.4
+ute = -0.02
+ua1 = 8.5338e-010
+ub1 = -4.6915e-019
+uc1 = -2.6261e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.1e-06
+sbref = 1.1e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.16 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.04+phighvt_vth0_diff_16' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.67536437
+k2 = '-0.053372195+phighvt_k2_diff_16'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '82990+phighvt_vsat_diff_16'
+ua = '-1.5168868e-009+phighvt_ua_diff_16'
+ub = '1.2320708e-018+phighvt_ub_diff_16'
+uc = -1.9527632e-011
+rdsw = '531.92+phighvt_rdsw_diff_16'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0051814+phighvt_u0_diff_16'
+a0 = '0.7759+phighvt_a0_diff_16'
+keta = '-0.067277+phighvt_keta_diff_16'
+a1 = 0
+a2 = 0.8
+ags = '2.2623+phighvt_ags_diff_16'
+b0 = '0+phighvt_b0_diff_16'
+b1 = '0+phighvt_b1_diff_16'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20169534+phighvt_voff_diff_16' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6402517+phighvt_nfactor_diff_16' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_16'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_16'
+etab = -0.000625
+dsub = 0.58604243
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.63858582+phighvt_pclm_diff_16'
+pdiblc1 = 0.37729626
+pdiblc2 = 0.0080164025
+pdiblcb = -0.025
+drout = 0.43840284
+pscbe1 = 7.9985266e+008
+pscbe2 = 9.1408168e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.7168788
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_16'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_16'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_16'
+bgidl = '1.0398522e009+phighvt_bgidl_diff_16'
+cgidl = '300+phighvt_cgidl_diff_16'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.48894097+phighvt_kt1_diff_16'
+kt2 = -0.049904433
+at = 43872.957
+ute = 0
+ua1 = 1.7802917e-009
+ub1 = -1.4439577e-018
+uc1 = -1.173717e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.25e-06
+sbref = 1.24e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.17 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0525+phighvt_vth0_diff_17' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.56908827
+k2 = '-0.011566694+phighvt_k2_diff_17'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '54459+phighvt_vsat_diff_17'
+ua = '-1.275487e-009+phighvt_ua_diff_17'
+ub = '1.0182404e-018+phighvt_ub_diff_17'
+uc = -3.1964151e-011
+rdsw = '531.92+phighvt_rdsw_diff_17'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0056349+phighvt_u0_diff_17'
+a0 = '1.1805+phighvt_a0_diff_17'
+keta = '-0.046962+phighvt_keta_diff_17'
+a1 = 0
+a2 = 1
+ags = '1.2529+phighvt_ags_diff_17'
+b0 = '0+phighvt_b0_diff_17'
+b1 = '0+phighvt_b1_diff_17'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16839389+phighvt_voff_diff_17' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6923599+phighvt_nfactor_diff_17' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_17'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.076567606+phighvt_eta0_diff_17'
+etab = -0.00049978947
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.70967546+phighvt_pclm_diff_17'
+pdiblc1 = 1
+pdiblc2 = 0.0010175577
+pdiblcb = -0.00033376626
+drout = 0.97122547
+pscbe1 = 7.9125432e+008
+pscbe2 = 9.2375409e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.2818518
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_17'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_17'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_17'
+bgidl = '1.1956507e009+phighvt_bgidl_diff_17'
+cgidl = '300+phighvt_cgidl_diff_17'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.49142+phighvt_kt1_diff_17'
+kt2 = -0.047601
+at = 35000
+ute = -0.02
+ua1 = 2.1513e-009
+ub1 = -1.6736e-018
+uc1 = -7.0232e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.75e-06
+sbref = 1.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.18 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0858+phighvt_vth0_diff_18' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.44130134
+k2 = '0.036889917+phighvt_k2_diff_18'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '72710+phighvt_vsat_diff_18'
+ua = '-5.3225192e-010+phighvt_ua_diff_18'
+ub = '5.1388849e-019+phighvt_ub_diff_18'
+uc = -5.6694956e-011
+rdsw = '531.92+phighvt_rdsw_diff_18'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0085766+phighvt_u0_diff_18'
+a0 = '1.2006+phighvt_a0_diff_18'
+keta = '-0.013602+phighvt_keta_diff_18'
+a1 = 0
+a2 = 0.8
+ags = '0.54865+phighvt_ags_diff_18'
+b0 = '0+phighvt_b0_diff_18'
+b1 = '0+phighvt_b1_diff_18'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16518298+phighvt_voff_diff_18' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.5748567+phighvt_nfactor_diff_18' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_18'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.22+phighvt_eta0_diff_18'
+etab = -0.30366369
+dsub = 0.85336401
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.60412281+phighvt_pclm_diff_18'
+pdiblc1 = 0.38373419
+pdiblc2 = 0.00043
+pdiblcb = -0.025
+drout = 0.70261844
+pscbe1 = 8e+008
+pscbe2 = 9.2096545e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1.4146004e-005
+alpha1 = 0
+beta0 = 28.081744
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_18'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_18'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_18'
+bgidl = '1.3996002e009+phighvt_bgidl_diff_18'
+cgidl = '300+phighvt_cgidl_diff_18'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.48018+phighvt_kt1_diff_18'
+kt2 = -0.046569
+at = 109020
+ute = -1.434
+ua1 = -3.8899e-010
+ub1 = 3.2187e-019
+uc1 = 3.3584e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 2.75e-06
+sbref = 2.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.19 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0872892+phighvt_vth0_diff_19' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.53345147
+k2 = '0.0027858125+phighvt_k2_diff_19'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '35625+phighvt_vsat_diff_19'
+ua = '-8.0934302e-010+phighvt_ua_diff_19'
+ub = '6.7677934e-019+phighvt_ub_diff_19'
+uc = -5.9955419e-011
+rdsw = '531.92+phighvt_rdsw_diff_19'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0072052162+phighvt_u0_diff_19'
+a0 = '1.7284184+phighvt_a0_diff_19'
+keta = '-0.063721729+phighvt_keta_diff_19'
+a1 = 0
+a2 = 0.8
+ags = '0.78892655+phighvt_ags_diff_19'
+b0 = '0+phighvt_b0_diff_19'
+b1 = '0+phighvt_b1_diff_19'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16545197+phighvt_voff_diff_19' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.1558893+phighvt_nfactor_diff_19' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_19'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_19'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.45648692+phighvt_pclm_diff_19'
+pdiblc1 = 0.39
+pdiblc2 = 0.000215
+pdiblcb = -0.0015421195
+drout = 0.56
+pscbe1 = 7.9946973e+008
+pscbe2 = 9.0633893e-009
+pvag = 0
+delta = 0.01
+alpha0 = 0.0011084375
+alpha1 = 0
+beta0 = 34.276539
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_19'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_19'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_19'
+bgidl = '1.3341834e009+phighvt_bgidl_diff_19'
+cgidl = '300+phighvt_cgidl_diff_19'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.44242368+phighvt_kt1_diff_19'
+kt2 = -0.049106631
+at = 53051.873
+ute = -0.067525036
+ua1 = 2.2361689e-009
+ub1 = -1.259434e-018
+uc1 = 5.4626174e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.20 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0927+phighvt_vth0_diff_20' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.49316523
+k2 = '0.01697874+phighvt_k2_diff_20'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '95427.371+phighvt_vsat_diff_20'
+ua = '-3.3723388e-010+phighvt_ua_diff_20'
+ub = '3.0453411e-019+phighvt_ub_diff_20'
+uc = -9.1713591e-011
+rdsw = '531.92+phighvt_rdsw_diff_20'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0086057047+phighvt_u0_diff_20'
+a0 = '1.8+phighvt_a0_diff_20'
+keta = '-0.051588355+phighvt_keta_diff_20'
+a1 = 0
+a2 = 0.8
+ags = '0.60481644+phighvt_ags_diff_20'
+b0 = '0+phighvt_b0_diff_20'
+b1 = '0+phighvt_b1_diff_20'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.1798184+phighvt_voff_diff_20' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.0684525+phighvt_nfactor_diff_20' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_20'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_20'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.6328125+phighvt_pclm_diff_20'
+pdiblc1 = 0.39
+pdiblc2 = 0.000215
+pdiblcb = -0.0030509163
+drout = 0.56
+pscbe1 = 7.2399674e+008
+pscbe2 = 9.0530869e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 5.9685005
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_20'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_20'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '3.8443359e-009+phighvt_agidl_diff_20'
+bgidl = '2.0270271e009+phighvt_bgidl_diff_20'
+cgidl = '300+phighvt_cgidl_diff_20'
+egidl = 0.30978258
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.43564+phighvt_kt1_diff_20'
+kt2 = -0.044551
+at = 183070
+ute = -1.192
+ua1 = -3.3779e-010
+ub1 = 7.436e-019
+uc1 = 6.064e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.21 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.1159+phighvt_vth0_diff_21' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.4341788
+k2 = '0.038440143+phighvt_k2_diff_21'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '160312.5+phighvt_vsat_diff_21'
+ua = '-2.1314996e-010+phighvt_ua_diff_21'
+ub = '4.7411485e-019+phighvt_ub_diff_21'
+uc = -7.9556859e-011
+rdsw = '531.92+phighvt_rdsw_diff_21'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.010199256+phighvt_u0_diff_21'
+a0 = '1.665838+phighvt_a0_diff_21'
+keta = '-0.050091678+phighvt_keta_diff_21'
+a1 = 0
+a2 = 0.8
+ags = '0.52002664+phighvt_ags_diff_21'
+b0 = '0+phighvt_b0_diff_21'
+b1 = '0+phighvt_b1_diff_21'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.19418166+phighvt_voff_diff_21' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.2175692+phighvt_nfactor_diff_21' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_21'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_21'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.17545984+phighvt_pclm_diff_21'
+pdiblc1 = 0.39
+pdiblc2 = 0.00016638736
+pdiblcb = -0.0030652793
+drout = 0.56
+pscbe1 = 7.1874307e+008
+pscbe2 = 9.6049183e-009
+pvag = 0
+delta = 0.01
+alpha0 = 4.7454745e-010
+alpha1 = 2.7526933e-013
+beta0 = 3.2147823
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_21'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_21'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_21'
+bgidl = '1.4504093e009+phighvt_bgidl_diff_21'
+cgidl = '300+phighvt_cgidl_diff_21'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.43169+phighvt_kt1_diff_21'
+kt2 = -0.037961
+at = 0
+ute = -0.35073
+ua1 = 2.2116e-009
+ub1 = -9.2056e-019
+uc1 = 1.1985e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.22 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0954+phighvt_vth0_diff_22' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0969763
+k2 = '-0.21116608+phighvt_k2_diff_22'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '82498+phighvt_vsat_diff_22'
+ua = '-2.2454028e-009+phighvt_ua_diff_22'
+ub = '1.845539e-018+phighvt_ub_diff_22'
+uc = -1.0274467e-011
+rdsw = '531.92+phighvt_rdsw_diff_22'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0031536+phighvt_u0_diff_22'
+a0 = '0.83703+phighvt_a0_diff_22'
+keta = '-0.0081525+phighvt_keta_diff_22'
+a1 = 0
+a2 = 0.79050291
+ags = '1.25+phighvt_ags_diff_22'
+b0 = '0+phighvt_b0_diff_22'
+b1 = '0+phighvt_b1_diff_22'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.26019244+phighvt_voff_diff_22' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_22' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_22'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.21992699+phighvt_eta0_diff_22'
+etab = -0.026458894
+dsub = 0.29707718
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62670482+phighvt_pclm_diff_22'
+pdiblc1 = 0.15132174
+pdiblc2 = 0.0033763378
+pdiblcb = -0.253125
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 9.3946251e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.099315
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_22'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_22'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_22'
+bgidl = '1.0772307e009+phighvt_bgidl_diff_22'
+cgidl = '300+phighvt_cgidl_diff_22'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5204+phighvt_kt1_diff_22'
+kt2 = -0.089816
+at = 44501
+ute = -0.21179
+ua1 = 1.8804e-010
+ub1 = 2.6593e-019
+uc1 = -1.0018e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.23 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.096+phighvt_vth0_diff_23' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.89461406
+k2 = '-0.13422243+phighvt_k2_diff_23'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '102800+phighvt_vsat_diff_23'
+ua = '-1.7389301e-009+phighvt_ua_diff_23'
+ub = '1.3985e-018+phighvt_ub_diff_23'
+uc = -2.393326e-011
+rdsw = '531.92+phighvt_rdsw_diff_23'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0046023+phighvt_u0_diff_23'
+a0 = '0.89879+phighvt_a0_diff_23'
+keta = '-0.040629+phighvt_keta_diff_23'
+a1 = 0
+a2 = 0.56974687
+ags = '1.25+phighvt_ags_diff_23'
+b0 = '0+phighvt_b0_diff_23'
+b1 = '0+phighvt_b1_diff_23'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.23886342+phighvt_voff_diff_23' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.7735611+phighvt_nfactor_diff_23' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_23'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_23'
+etab = -0.000625
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.65278044+phighvt_pclm_diff_23'
+pdiblc1 = 0.42499332
+pdiblc2 = 0.0090143058
+pdiblcb = -0.10470192
+drout = 0.42008993
+pscbe1 = 7.9964807e+008
+pscbe2 = 3.4071835e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.1248308
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_23'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_23'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_23'
+bgidl = '1.05496e009+phighvt_bgidl_diff_23'
+cgidl = '300+phighvt_cgidl_diff_23'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.48769+phighvt_kt1_diff_23'
+kt2 = -0.053086
+at = 28028
+ute = -0.40375
+ua1 = 3.7761e-010
+ub1 = 7.0428e-020
+uc1 = -9.3567e-012
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.1e-06
+sbref = 1.1e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.24 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.042+phighvt_vth0_diff_24' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.76036809
+k2 = '-0.078478762+phighvt_k2_diff_24'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '75610+phighvt_vsat_diff_24'
+ua = '-1.7682092e-009+phighvt_ua_diff_24'
+ub = '1.3864375e-018+phighvt_ub_diff_24'
+uc = -1.3550723e-011
+rdsw = '531.92+phighvt_rdsw_diff_24'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0045026+phighvt_u0_diff_24'
+a0 = '0.74421+phighvt_a0_diff_24'
+keta = '-0.10038+phighvt_keta_diff_24'
+a1 = 0
+a2 = 0.8
+ags = '1.963+phighvt_ags_diff_24'
+b0 = '0+phighvt_b0_diff_24'
+b1 = '0+phighvt_b1_diff_24'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20251307+phighvt_voff_diff_24' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.490156+phighvt_nfactor_diff_24' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_24'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_24'
+etab = -0.000625
+dsub = 0.7218335
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.63775026+phighvt_pclm_diff_24'
+pdiblc1 = 0.32127661
+pdiblc2 = 0.0085305491
+pdiblcb = -0.025
+drout = 0.44422126
+pscbe1 = 8e+008
+pscbe2 = 1e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.8182288
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_24'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_24'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_24'
+bgidl = '1.1983673e009+phighvt_bgidl_diff_24'
+cgidl = '300+phighvt_cgidl_diff_24'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.47741+phighvt_kt1_diff_24'
+kt2 = -0.040182
+at = 37313
+ute = -0.027
+ua1 = 1.2301e-009
+ub1 = -8.8921e-019
+uc1 = -5.2509e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.25e-06
+sbref = 1.24e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.25 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0644+phighvt_vth0_diff_25' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.4833677
+k2 = '0.024472177+phighvt_k2_diff_25'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '74491+phighvt_vsat_diff_25'
+ua = '-1.1805141e-009+phighvt_ua_diff_25'
+ub = '1.0734439e-018+phighvt_ub_diff_25'
+uc = -1.0742596e-011
+rdsw = '531.92+phighvt_rdsw_diff_25'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0067552+phighvt_u0_diff_25'
+a0 = '1.2689+phighvt_a0_diff_25'
+keta = '-0.032245+phighvt_keta_diff_25'
+a1 = 0
+a2 = 0.8312879
+ags = '1.1009+phighvt_ags_diff_25'
+b0 = '0+phighvt_b0_diff_25'
+b1 = '0+phighvt_b1_diff_25'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.18695718+phighvt_voff_diff_25' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.4732207+phighvt_nfactor_diff_25' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_25'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.054863493+phighvt_eta0_diff_25'
+etab = -0.00012499874
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.63092942+phighvt_pclm_diff_25'
+pdiblc1 = 0.39628238
+pdiblc2 = 0.0016059821
+pdiblcb = -0.025
+drout = 0.70633347
+pscbe1 = 8e+008
+pscbe2 = 9.2926982e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.1501021
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_25'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_25'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_25'
+bgidl = '1.1645988e009+phighvt_bgidl_diff_25'
+cgidl = '300+phighvt_cgidl_diff_25'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.49132193+phighvt_kt1_diff_25'
+kt2 = -0.034228084
+at = 50649
+ute = -0.11
+ua1 = 2.5098e-009
+ub1 = -1.9248e-018
+uc1 = -1.8195212e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.75e-06
+sbref = 1.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.26 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0780308+phighvt_vth0_diff_26' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.4445971
+k2 = '0.036046509+phighvt_k2_diff_26'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '88750.283+phighvt_vsat_diff_26'
+ua = '-5.031714e-010+phighvt_ua_diff_26'
+ub = '4.3050303e-019+phighvt_ub_diff_26'
+uc = -6.3964987e-011
+rdsw = '531.92+phighvt_rdsw_diff_26'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0081931334+phighvt_u0_diff_26'
+a0 = '1.8+phighvt_a0_diff_26'
+keta = '-0.041927844+phighvt_keta_diff_26'
+a1 = 0
+a2 = 0.8
+ags = '0.90351153+phighvt_ags_diff_26'
+b0 = '0+phighvt_b0_diff_26'
+b1 = '0+phighvt_b1_diff_26'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16002206+phighvt_voff_diff_26' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.512863+phighvt_nfactor_diff_26' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_26'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.21978139+phighvt_eta0_diff_26'
+etab = -0.001
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.72200826+phighvt_pclm_diff_26'
+pdiblc1 = 0.34455322
+pdiblc2 = 0.00043
+pdiblcb = -0.0013402428
+drout = 0.84940843
+pscbe1 = 8e+008
+pscbe2 = 9.1042217e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.8119134
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_26'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_26'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_26'
+bgidl = '1.1265371e009+phighvt_bgidl_diff_26'
+cgidl = '300+phighvt_cgidl_diff_26'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.47087793+phighvt_kt1_diff_26'
+kt2 = -0.047186161
+at = 146413.08
+ute = -1.4106286
+ua1 = -6.4493406e-010
+ub1 = 7.6432187e-019
+uc1 = -2.3969998e-013
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 2.75e-06
+sbref = 2.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.27 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0958+phighvt_vth0_diff_27' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.49484891
+k2 = '0.016953624+phighvt_k2_diff_27'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '56985.594+phighvt_vsat_diff_27'
+ua = '-5.0603686e-010+phighvt_ua_diff_27'
+ub = '4.659009e-019+phighvt_ub_diff_27'
+uc = -7.278917e-011
+rdsw = '531.92+phighvt_rdsw_diff_27'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0082826683+phighvt_u0_diff_27'
+a0 = '1.8+phighvt_a0_diff_27'
+keta = '-0.057688775+phighvt_keta_diff_27'
+a1 = 0
+a2 = 0.8
+ags = '0.75329061+phighvt_ags_diff_27'
+b0 = '0+phighvt_b0_diff_27'
+b1 = '0+phighvt_b1_diff_27'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16625518+phighvt_voff_diff_27' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_27' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_27'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0005+phighvt_eta0_diff_27'
+etab = -0.0005
+dsub = 0.35054315
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.60908252+phighvt_pclm_diff_27'
+pdiblc1 = 0.39
+pdiblc2 = 0.00024386453
+pdiblcb = -0.0015397845
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 8.6725007e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 7.2919286
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_27'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_27'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.0527802e-010+phighvt_agidl_diff_27'
+bgidl = '1e009+phighvt_bgidl_diff_27'
+cgidl = '300+phighvt_cgidl_diff_27'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.43067+phighvt_kt1_diff_27'
+kt2 = -0.043694
+at = 90900
+ute = -0.166613
+ua1 = 1.8352e-009
+ub1 = -6.365e-019
+uc1 = -7.2315e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.28 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.1156+phighvt_vth0_diff_28' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.42968867
+k2 = '0.039776972+phighvt_k2_diff_28'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '125717.43+phighvt_vsat_diff_28'
+ua = '-2.0318495e-010+phighvt_ua_diff_28'
+ub = '5.2559825e-019+phighvt_ub_diff_28'
+uc = -7.0417557e-011
+rdsw = '531.92+phighvt_rdsw_diff_28'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.010889942+phighvt_u0_diff_28'
+a0 = '1.8+phighvt_a0_diff_28'
+keta = '-0.055380802+phighvt_keta_diff_28'
+a1 = 0
+a2 = 0.8
+ags = '0.64176685+phighvt_ags_diff_28'
+b0 = '0+phighvt_b0_diff_28'
+b1 = '0+phighvt_b1_diff_28'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.18803206+phighvt_voff_diff_28' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.2421256+phighvt_nfactor_diff_28' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_28'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_28'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.6328125+phighvt_pclm_diff_28'
+pdiblc1 = 0.39
+pdiblc2 = 0.00047806596
+pdiblcb = -0.00077107696
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 8.9505911e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 5.3164253
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_28'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_28'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.4533856e-010+phighvt_agidl_diff_28'
+bgidl = '1e009+phighvt_bgidl_diff_28'
+cgidl = '300+phighvt_cgidl_diff_28'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.45246+phighvt_kt1_diff_28'
+kt2 = -0.040346
+at = 262510
+ute = -0.29825
+ua1 = 2.4184e-009
+ub1 = -9.6782e-019
+uc1 = 1.3692e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.29 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.1184+phighvt_vth0_diff_29' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.43657182
+k2 = '0.038800788+phighvt_k2_diff_29'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '200000+phighvt_vsat_diff_29'
+ua = '-2.2322697e-010+phighvt_ua_diff_29'
+ub = '4.8655173e-019+phighvt_ub_diff_29'
+uc = -7.7670696e-011
+rdsw = '531.92+phighvt_rdsw_diff_29'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.010379898+phighvt_u0_diff_29'
+a0 = '1.5+phighvt_a0_diff_29'
+keta = '-0.013169082+phighvt_keta_diff_29'
+a1 = 0
+a2 = 1
+ags = '0.3831138+phighvt_ags_diff_29'
+b0 = '0+phighvt_b0_diff_29'
+b1 = '0+phighvt_b1_diff_29'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.18809688+phighvt_voff_diff_29' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.2739776+phighvt_nfactor_diff_29' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_29'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_29'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.075489662+phighvt_pclm_diff_29'
+pdiblc1 = 0.39
+pdiblc2 = 0.0036275994
+pdiblcb = -9.5744039e-005
+drout = 0.56
+pscbe1 = 7.4647513e+008
+pscbe2 = 9.5049925e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 4.7923891
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_29'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_29'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_29'
+bgidl = '1.1544446e009+phighvt_bgidl_diff_29'
+cgidl = '300+phighvt_cgidl_diff_29'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.44169+phighvt_kt1_diff_29'
+kt2 = -0.037961
+at = 0
+ute = -0.30066
+ua1 = 2.2116e-009
+ub1 = -7.9359e-019
+uc1 = 1.1985e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.30 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.1+phighvt_vth0_diff_30' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0822622
+k2 = '-0.20530248+phighvt_k2_diff_30'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '75665+phighvt_vsat_diff_30'
+ua = '-2.2169895e-009+phighvt_ua_diff_30'
+ub = '1.8138e-018+phighvt_ub_diff_30'
+uc = -1.5008916e-011
+rdsw = '531.92+phighvt_rdsw_diff_30'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0033341+phighvt_u0_diff_30'
+a0 = '0.59301+phighvt_a0_diff_30'
+keta = '-0.021696+phighvt_keta_diff_30'
+a1 = 0
+a2 = 0.78383709
+ags = '1.25+phighvt_ags_diff_30'
+b0 = '2.1073e-024+phighvt_b0_diff_30'
+b1 = '0+phighvt_b1_diff_30'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.25185386+phighvt_voff_diff_30' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_30' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_30'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.22+phighvt_eta0_diff_30'
+etab = -0.035854132
+dsub = 0.30924623
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62785976+phighvt_pclm_diff_30'
+pdiblc1 = 0.17859515
+pdiblc2 = 0.0038564115
+pdiblcb = -0.16875
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 9.5148691e-009
+pvag = 0
+delta = 0.01
+alpha0 = 5.6340468e-009
+alpha1 = 0
+beta0 = 13.847471
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_30'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_30'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_30'
+bgidl = '1.284208e009+phighvt_bgidl_diff_30'
+cgidl = '300+phighvt_cgidl_diff_30'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.52854+phighvt_kt1_diff_30'
+kt2 = -0.040578
+at = 24791
+ute = -0.28
+ua1 = 4.1289e-010
+ub1 = -4.1639e-020
+uc1 = -3.6599e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.31 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0638+phighvt_vth0_diff_31' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.98410246
+k2 = '-0.15921092+phighvt_k2_diff_31'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '75326+phighvt_vsat_diff_31'
+ua = '-2.1424017e-009+phighvt_ua_diff_31'
+ub = '1.6755e-018+phighvt_ub_diff_31'
+uc = -1.093974e-011
+rdsw = '531.92+phighvt_rdsw_diff_31'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0032452+phighvt_u0_diff_31'
+a0 = '0.60495+phighvt_a0_diff_31'
+keta = '-0.088216+phighvt_keta_diff_31'
+a1 = 0
+a2 = 0.7245882
+ags = '1.25+phighvt_ags_diff_31'
+b0 = '0+phighvt_b0_diff_31'
+b1 = '0+phighvt_b1_diff_31'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.2086929+phighvt_voff_diff_31' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6948856+phighvt_nfactor_diff_31' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_31'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_31'
+etab = -0.00062500003
+dsub = 0.56499453
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.70320506+phighvt_pclm_diff_31'
+pdiblc1 = 0.40758103
+pdiblc2 = 0.0091365927
+pdiblcb = -0.17539027
+drout = 0.58508493
+pscbe1 = 7.9989774e+008
+pscbe2 = 9.2821999e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1.4511866e-008
+alpha1 = 0
+beta0 = 16.184805
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_31'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_31'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_31'
+bgidl = '1.397257e009+phighvt_bgidl_diff_31'
+cgidl = '49.03999+phighvt_cgidl_diff_31'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.51769+phighvt_kt1_diff_31'
+kt2 = -0.053086
+at = 33028
+ute = -0.16694
+ua1 = 3.7761e-010
+ub1 = 7.0428e-020
+uc1 = -9.3567e-012
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.1e-06
+sbref = 1.1e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.32 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.056+phighvt_vth0_diff_32' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.7471885
+k2 = '-0.07475736+phighvt_k2_diff_32'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '81648+phighvt_vsat_diff_32'
+ua = '-1.8602371e-009+phighvt_ua_diff_32'
+ub = '1.5376e-018+phighvt_ub_diff_32'
+uc = 2.0393181e-014
+rdsw = '531.92+phighvt_rdsw_diff_32'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0046393+phighvt_u0_diff_32'
+a0 = '0.78195+phighvt_a0_diff_32'
+keta = '-0.087499+phighvt_keta_diff_32'
+a1 = 0
+a2 = 0.8
+ags = '2.3062+phighvt_ags_diff_32'
+b0 = '0+phighvt_b0_diff_32'
+b1 = '0+phighvt_b1_diff_32'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.19332381+phighvt_voff_diff_32' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.7961467+phighvt_nfactor_diff_32' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_32'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_32'
+etab = -0.000625
+dsub = 0.68351845
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.72217021+phighvt_pclm_diff_32'
+pdiblc1 = 0.37481283
+pdiblc2 = 0.00847069
+pdiblcb = -0.025
+drout = 0.56215143
+pscbe1 = 8e+008
+pscbe2 = 1e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1.5780878e-008
+alpha1 = 0
+beta0 = 16.648985
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_32'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_32'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_32'
+bgidl = '1.2422931e009+phighvt_bgidl_diff_32'
+cgidl = '300+phighvt_cgidl_diff_32'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.49688692+phighvt_kt1_diff_32'
+kt2 = -0.038371627
+at = 45286.948
+ute = -0.05
+ua1 = 1.2030437e-009
+ub1 = -7.4291142e-019
+uc1 = -7.4139789e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.25e-06
+sbref = 1.24e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.33 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.062+phighvt_vth0_diff_33' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.47940167
+k2 = '0.025228682+phighvt_k2_diff_33'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '76181+phighvt_vsat_diff_33'
+ua = '-1.1418974e-009+phighvt_ua_diff_33'
+ub = '1.0181e-018+phighvt_ub_diff_33'
+uc = -1.4888633e-011
+rdsw = '531.92+phighvt_rdsw_diff_33'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0067018+phighvt_u0_diff_33'
+a0 = '1.0839+phighvt_a0_diff_33'
+keta = '-0.030761+phighvt_keta_diff_33'
+a1 = 0
+a2 = 1
+ags = '0.93515+phighvt_ags_diff_33'
+b0 = '0+phighvt_b0_diff_33'
+b1 = '0+phighvt_b1_diff_33'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17869917+phighvt_voff_diff_33' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.5089649+phighvt_nfactor_diff_33' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_33'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.014184772+phighvt_eta0_diff_33'
+etab = -0.001
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.88914551+phighvt_pclm_diff_33'
+pdiblc1 = 0.055790472
+pdiblc2 = 0.00077664689
+pdiblcb = -0.025
+drout = 0.9532331
+pscbe1 = 7.5896555e+008
+pscbe2 = 9.1354199e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.0699549
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_33'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_33'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-010+phighvt_agidl_diff_33'
+bgidl = '1.1691122e009+phighvt_bgidl_diff_33'
+cgidl = '300+phighvt_cgidl_diff_33'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.4903768+phighvt_kt1_diff_33'
+kt2 = -0.032665077
+at = 40000
+ute = -0.11
+ua1 = 2.5665e-009
+ub1 = -2.0842e-018
+uc1 = -1.9532902e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.75e-06
+sbref = 1.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.34 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.1+phighvt_vth0_diff_34' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.48072746
+k2 = '0.012321803+phighvt_k2_diff_34'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '40253+phighvt_vsat_diff_34'
+ua = '-1.2162698e-009+phighvt_ua_diff_34'
+ub = '9.0906101e-019+phighvt_ub_diff_34'
+uc = -5.3977149e-011
+rdsw = '531.92+phighvt_rdsw_diff_34'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0062058+phighvt_u0_diff_34'
+a0 = '1.1296+phighvt_a0_diff_34'
+keta = '-0.013884019+phighvt_keta_diff_34'
+a1 = 0
+a2 = 0.8
+ags = '0.80322+phighvt_ags_diff_34'
+b0 = '0+phighvt_b0_diff_34'
+b1 = '0+phighvt_b1_diff_34'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.15239965+phighvt_voff_diff_34' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.3341073+phighvt_nfactor_diff_34' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_34'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.22+phighvt_eta0_diff_34'
+etab = -0.84636554
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.4019278+phighvt_pclm_diff_34'
+pdiblc1 = 0.38864941
+pdiblc2 = 0.00043
+pdiblcb = -0.225
+drout = 0.8447626
+pscbe1 = 8e+008
+pscbe2 = 9.0954252e-009
+pvag = 0
+delta = 0.01
+alpha0 = 7.6893915e-011
+alpha1 = -1e-010
+beta0 = 6.2607413
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_34'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_34'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.0937505e-009+phighvt_agidl_diff_34'
+bgidl = '1e009+phighvt_bgidl_diff_34'
+cgidl = '300+phighvt_cgidl_diff_34'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.46303+phighvt_kt1_diff_34'
+kt2 = -0.051385
+at = 39763
+ute = -1.0096
+ua1 = -6.0791e-010
+ub1 = 1.1586e-018
+uc1 = 1.0712e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 2.75e-06
+sbref = 2.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.35 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.9995e-05 lmax = 2.0005e-05 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0822+phighvt_vth0_diff_35' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.43165561
+k2 = '0.036341026+phighvt_k2_diff_35'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '80156+phighvt_vsat_diff_35'
+ua = '-6.0301916e-010+phighvt_ua_diff_35'
+ub = '4.3041395e-019+phighvt_ub_diff_35'
+uc = -1.0566299e-010
+rdsw = '531.92+phighvt_rdsw_diff_35'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0074557+phighvt_u0_diff_35'
+a0 = '1.464+phighvt_a0_diff_35'
+keta = '0.023361259+phighvt_keta_diff_35'
+a1 = 0
+a2 = 0.97
+ags = '0.11329+phighvt_ags_diff_35'
+b0 = '0+phighvt_b0_diff_35'
+b1 = '2.1073e-024+phighvt_b1_diff_35'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17508072+phighvt_voff_diff_35' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6473612+phighvt_nfactor_diff_35' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_35'
+cit = 3.2465718e-007
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_35'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.015+phighvt_pclm_diff_35'
+pdiblc1 = 0.39
+pdiblc2 = 0.0012771588
+pdiblcb = -0.225
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 1.0060625e-008
+pvag = 0
+delta = 0.01
+alpha0 = 0
+alpha1 = 0
+beta0 = 30
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_35'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_35'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.9002574e-009+phighvt_agidl_diff_35'
+bgidl = '1e009+phighvt_bgidl_diff_35'
+cgidl = '300+phighvt_cgidl_diff_35'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.43825+phighvt_kt1_diff_35'
+kt2 = -0.058546
+at = 70990
+ute = -0.08298
+ua1 = 2.0902e-009
+ub1 = -1.2289e-018
+uc1 = -2.9789e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.36 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0867333+phighvt_vth0_diff_36' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.47183665
+k2 = '0.018908449+phighvt_k2_diff_36'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '50706.805+phighvt_vsat_diff_36'
+ua = '-1.0534351e-009+phighvt_ua_diff_36'
+ub = '7.3416654e-019+phighvt_ub_diff_36'
+uc = -6.9057193e-011
+rdsw = '531.92+phighvt_rdsw_diff_36'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0064899791+phighvt_u0_diff_36'
+a0 = '1.2296686+phighvt_a0_diff_36'
+keta = '-0.0010722962+phighvt_keta_diff_36'
+a1 = 0
+a2 = 0.8
+ags = '0.27979705+phighvt_ags_diff_36'
+b0 = '0+phighvt_b0_diff_36'
+b1 = '0+phighvt_b1_diff_36'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.15888314+phighvt_voff_diff_36' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6747976+phighvt_nfactor_diff_36' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_36'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0005+phighvt_eta0_diff_36'
+etab = -0.0005
+dsub = 0.26
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.63484294+phighvt_pclm_diff_36'
+pdiblc1 = 0.39
+pdiblc2 = 0.00043
+pdiblcb = -0.225
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 9.3781415e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 4.6177381
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_36'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_36'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.9586586e-009+phighvt_agidl_diff_36'
+bgidl = '1e009+phighvt_bgidl_diff_36'
+cgidl = '300+phighvt_cgidl_diff_36'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.53604+phighvt_kt1_diff_36'
+kt2 = -0.05223
+at = 10000
+ute = -1.0659
+ua1 = 4.5568e-010
+ub1 = -2.7217e-019
+uc1 = 5.2142e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.37 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.1027+phighvt_vth0_diff_37' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.42180358
+k2 = '0.034434574+phighvt_k2_diff_37'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '54812.074+phighvt_vsat_diff_37'
+ua = '-4.5085882e-010+phighvt_ua_diff_37'
+ub = '3.2682605e-019+phighvt_ub_diff_37'
+uc = -1.0711711e-010
+rdsw = '531.92+phighvt_rdsw_diff_37'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0085984431+phighvt_u0_diff_37'
+a0 = '1.2594348+phighvt_a0_diff_37'
+keta = '0.013644534+phighvt_keta_diff_37'
+a1 = 0
+a2 = 0.8
+ags = '0.19308737+phighvt_ags_diff_37'
+b0 = '0+phighvt_b0_diff_37'
+b1 = '0+phighvt_b1_diff_37'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17662052+phighvt_voff_diff_37' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.701106+phighvt_nfactor_diff_37' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_37'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_37'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.34304825+phighvt_pclm_diff_37'
+pdiblc1 = 0.39
+pdiblc2 = 0.00057854717
+pdiblcb = -0.225
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 9.5516009e-009
+pvag = 0
+delta = 0.01
+alpha0 = 0
+alpha1 = 0
+beta0 = 30
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_37'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_37'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.4740645e-009+phighvt_agidl_diff_37'
+bgidl = '1e009+phighvt_bgidl_diff_37'
+cgidl = '300+phighvt_cgidl_diff_37'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.41825+phighvt_kt1_diff_37'
+kt2 = -0.058546
+at = 70990
+ute = -0.12298
+ua1 = 2.0902e-009
+ub1 = -1.1289e-018
+uc1 = -2.9789e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.38 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.081+phighvt_vth0_diff_38' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.43148777
+k2 = '0.033864949+phighvt_k2_diff_38'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '80156+phighvt_vsat_diff_38'
+ua = '-5.3845529e-010+phighvt_ua_diff_38'
+ub = '3.5204569e-019+phighvt_ub_diff_38'
+uc = -1.0990767e-010
+rdsw = '531.92+phighvt_rdsw_diff_38'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0077695+phighvt_u0_diff_38'
+a0 = '1.3962+phighvt_a0_diff_38'
+keta = '0.024383441+phighvt_keta_diff_38'
+a1 = 0
+a2 = 0.97
+ags = '0.12567+phighvt_ags_diff_38'
+b0 = '0+phighvt_b0_diff_38'
+b1 = '0+phighvt_b1_diff_38'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.17742247+phighvt_voff_diff_38' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.4425849+phighvt_nfactor_diff_38' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_38'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_38'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.017402344+phighvt_pclm_diff_38'
+pdiblc1 = 0.39
+pdiblc2 = 0.0030866885
+pdiblcb = -0.225
+drout = 0.56
+pscbe1 = 6.6004928e+008
+pscbe2 = 9.7083071e-009
+pvag = 0
+delta = 0.01
+alpha0 = 0
+alpha1 = 0
+beta0 = 30
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_38'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_38'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7.5013384e-010+phighvt_agidl_diff_38'
+bgidl = '1e009+phighvt_bgidl_diff_38'
+cgidl = '300+phighvt_cgidl_diff_38'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.50604+phighvt_kt1_diff_38'
+kt2 = -0.05223
+at = 10000
+ute = -1.0359
+ua1 = 4.8568e-010
+ub1 = -2.7217e-019
+uc1 = 5.2142e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.39 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.114+phighvt_vth0_diff_39' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.97201195
+k2 = '-0.19535474+phighvt_k2_diff_39'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109040+phighvt_vsat_diff_39'
+ua = '-2.1578101e-009+phighvt_ua_diff_39'
+ub = '1.8047023e-018+phighvt_ub_diff_39'
+uc = -1.9161134e-011
+rdsw = '531.92+phighvt_rdsw_diff_39'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0031373+phighvt_u0_diff_39'
+a0 = '1.0049776+phighvt_a0_diff_39'
+keta = '-0.017237009+phighvt_keta_diff_39'
+a1 = 0
+a2 = 0.63412408
+ags = '1.25+phighvt_ags_diff_39'
+b0 = '0+phighvt_b0_diff_39'
+b1 = '0+phighvt_b1_diff_39'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.19529487+phighvt_voff_diff_39' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_39' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_39'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_39'
+etab = -0.000625
+dsub = 0.48688771
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62457134+phighvt_pclm_diff_39'
+pdiblc1 = 0.16324552
+pdiblc2 = 0.0037058195
+pdiblcb = -0.50625
+drout = 1
+pscbe1 = 7.9999957e+008
+pscbe2 = 9.4716968e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.3819491
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_39'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_39'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '4.1396435e-009+phighvt_agidl_diff_39'
+bgidl = '1e009+phighvt_bgidl_diff_39'
+cgidl = '300+phighvt_cgidl_diff_39'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.52214+phighvt_kt1_diff_39'
+kt2 = -0.048777
+at = 37150
+ute = -0.1632
+ua1 = 8.4379e-010
+ub1 = -6.2949e-019
+uc1 = -8.2789e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.40 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0764+phighvt_vth0_diff_40' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.85164386
+k2 = '-0.12683+phighvt_k2_diff_40'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '132400+phighvt_vsat_diff_40'
+ua = '-2.164253e-009+phighvt_ua_diff_40'
+ub = '1.8572189e-018+phighvt_ub_diff_40'
+uc = 2.58041e-013
+rdsw = '531.92+phighvt_rdsw_diff_40'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0030964+phighvt_u0_diff_40'
+a0 = '1.166315+phighvt_a0_diff_40'
+keta = '-0.028218739+phighvt_keta_diff_40'
+a1 = 0
+a2 = 0.45249595
+ags = '1.25+phighvt_ags_diff_40'
+b0 = '0+phighvt_b0_diff_40'
+b1 = '0+phighvt_b1_diff_40'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.18676697+phighvt_voff_diff_40' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8760044+phighvt_nfactor_diff_40' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_40'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_40'
+etab = -6.25e-006
+dsub = 0.66213569
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.82665932+phighvt_pclm_diff_40'
+pdiblc1 = 0.18776805
+pdiblc2 = 0.0066944085
+pdiblcb = -0.225
+drout = 0.9981043
+pscbe1 = 7.9996855e+008
+pscbe2 = 9.3174823e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 9.0852145
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_40'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_40'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2.9262738e-009+phighvt_agidl_diff_40'
+bgidl = '1e009+phighvt_bgidl_diff_40'
+cgidl = '300+phighvt_cgidl_diff_40'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.54112+phighvt_kt1_diff_40'
+kt2 = -0.042333
+at = 105041
+ute = -0.42503
+ua1 = 2.9333e-010
+ub1 = 5.4574e-020
+uc1 = -5.8335e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.1e-06
+sbref = 1.1e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.41 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.119+phighvt_vth0_diff_41' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.50013358
+k2 = '0.017366908+phighvt_k2_diff_41'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '92665+phighvt_vsat_diff_41'
+ua = '-1.5575025e-009+phighvt_ua_diff_41'
+ub = '1.2428657e-018+phighvt_ub_diff_41'
+uc = -1.7540731e-011
+rdsw = '531.92+phighvt_rdsw_diff_41'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0051179+phighvt_u0_diff_41'
+a0 = '0.84229689+phighvt_a0_diff_41'
+keta = '-0.02917043+phighvt_keta_diff_41'
+a1 = 0
+a2 = 0.97
+ags = '1.25+phighvt_ags_diff_41'
+b0 = '0+phighvt_b0_diff_41'
+b1 = '0+phighvt_b1_diff_41'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.1619475+phighvt_voff_diff_41' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8525471+phighvt_nfactor_diff_41' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_41'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_41'
+etab = -6.25e-006
+dsub = 0.26
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.038924225+phighvt_pclm_diff_41'
+pdiblc1 = 0.013035351
+pdiblc2 = 2.6875e-005
+pdiblcb = -0.10009403
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 9.1480723e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.166112
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_41'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_41'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.9962149e-010+phighvt_agidl_diff_41'
+bgidl = '1e009+phighvt_bgidl_diff_41'
+cgidl = '300+phighvt_cgidl_diff_41'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.50388+phighvt_kt1_diff_41'
+kt2 = -0.059544
+at = 80000
+ute = -0.1686
+ua1 = 1.3219e-009
+ub1 = -7.9801e-019
+uc1 = -6.7349e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.75e-06
+sbref = 1.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.42 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 5.45e-07 wmax = 5.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.066397+phighvt_vth0_diff_42' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.50802186
+k2 = '0.00893704+phighvt_k2_diff_42'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '51812.515+phighvt_vsat_diff_42'
+ua = '-1.4244083e-009+phighvt_ua_diff_42'
+ub = '1.0216384e-018+phighvt_ub_diff_42'
+uc = -4.3585047e-011
+rdsw = '531.92+phighvt_rdsw_diff_42'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0048447295+phighvt_u0_diff_42'
+a0 = '1.2572312+phighvt_a0_diff_42'
+keta = '-0.0010368697+phighvt_keta_diff_42'
+a1 = 0
+a2 = 0.8
+ags = '0.56427018+phighvt_ags_diff_42'
+b0 = '0+phighvt_b0_diff_42'
+b1 = '0+phighvt_b1_diff_42'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.14904922+phighvt_voff_diff_42' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.4353498+phighvt_nfactor_diff_42' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_42'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_42'
+etab = -0.0012469733
+dsub = 0.26
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62805205+phighvt_pclm_diff_42'
+pdiblc1 = 0.38433914
+pdiblc2 = 0.00043
+pdiblcb = -0.225
+drout = 0.73636547
+pscbe1 = 8e+008
+pscbe2 = 9.1701202e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 6.4713014
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_42'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_42'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.2341059e-009+phighvt_agidl_diff_42'
+bgidl = '1e009+phighvt_bgidl_diff_42'
+cgidl = '300+phighvt_cgidl_diff_42'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.47906474+phighvt_kt1_diff_42'
+kt2 = -0.048559181
+at = 51761.743
+ute = -1.0481598
+ua1 = -4.3040399e-010
+ub1 = 8.5488555e-019
+uc1 = 6.6918782e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 2.75e-06
+sbref = 2.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.43 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 5.45e-07 wmax = 5.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0982+phighvt_vth0_diff_43' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.5072526
+k2 = '0.00063343074+phighvt_k2_diff_43'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '33805+phighvt_vsat_diff_43'
+ua = '-7.7290065e-010+phighvt_ua_diff_43'
+ub = '6.2039968e-019+phighvt_ub_diff_43'
+uc = -8.117396e-011
+rdsw = '531.92+phighvt_rdsw_diff_43'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0078733+phighvt_u0_diff_43'
+a0 = '1.1454+phighvt_a0_diff_43'
+keta = '-0.0091786+phighvt_keta_diff_43'
+a1 = 0
+a2 = 0.8
+ags = '0.40776+phighvt_ags_diff_43'
+b0 = '0+phighvt_b0_diff_43'
+b1 = '0+phighvt_b1_diff_43'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16843277+phighvt_voff_diff_43' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8440334+phighvt_nfactor_diff_43' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_43'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0005+phighvt_eta0_diff_43'
+etab = -0.0005
+dsub = 0.26000001
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.77228851+phighvt_pclm_diff_43'
+pdiblc1 = 0.39
+pdiblc2 = 0.00044132367
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 9.4663397e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 5.5678953
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_43'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_43'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '8.2771072e-010+phighvt_agidl_diff_43'
+bgidl = '1e009+phighvt_bgidl_diff_43'
+cgidl = '300+phighvt_cgidl_diff_43'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.45287+phighvt_kt1_diff_43'
+kt2 = -0.053935
+at = 40042
+ute = -0.27335
+ua1 = 1.3027e-009
+ub1 = -3.62e-019
+uc1 = 3.5526e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.44 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 5.45e-07 wmax = 5.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0928+phighvt_vth0_diff_44' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.44665324
+k2 = '0.023922352+phighvt_k2_diff_44'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '58700.889+phighvt_vsat_diff_44'
+ua = '-3.9411538e-010+phighvt_ua_diff_44'
+ub = '3.4511372e-019+phighvt_ub_diff_44'
+uc = -1.0733757e-010
+rdsw = '531.92+phighvt_rdsw_diff_44'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.008771213+phighvt_u0_diff_44'
+a0 = '1.2723362+phighvt_a0_diff_44'
+keta = '0.0067226692+phighvt_keta_diff_44'
+a1 = 0
+a2 = 0.8
+ags = '0.18304086+phighvt_ags_diff_44'
+b0 = '0+phighvt_b0_diff_44'
+b1 = '0+phighvt_b1_diff_44'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16990138+phighvt_voff_diff_44' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9+phighvt_nfactor_diff_44' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_44'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_44'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.68962544+phighvt_pclm_diff_44'
+pdiblc1 = 0.39
+pdiblc2 = 0.00043
+pdiblcb = -0.225
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 9.0916125e-009
+pvag = 0
+delta = 0.01
+alpha0 = 0
+alpha1 = 0
+beta0 = 30
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_44'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_44'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '3.7974328e-010+phighvt_agidl_diff_44'
+bgidl = '1e009+phighvt_bgidl_diff_44'
+cgidl = '300+phighvt_cgidl_diff_44'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.44425+phighvt_kt1_diff_44'
+kt2 = -0.058546
+at = 100990
+ute = -0.18298
+ua1 = 2.0902e-009
+ub1 = -1.1289e-018
+uc1 = -4.1814e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.45 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 5.45e-07 wmax = 5.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0906866+phighvt_vth0_diff_45' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.45351162
+k2 = '0.024555927+phighvt_k2_diff_45'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '61064.004+phighvt_vsat_diff_45'
+ua = '-4.9723649e-010+phighvt_ua_diff_45'
+ub = '4.0294943e-019+phighvt_ub_diff_45'
+uc = -1.0717282e-010
+rdsw = '531.92+phighvt_rdsw_diff_45'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.008070795+phighvt_u0_diff_45'
+a0 = '1.2209207+phighvt_a0_diff_45'
+keta = '0.0071303363+phighvt_keta_diff_45'
+a1 = 0
+a2 = 0.8
+ags = '0.11410703+phighvt_ags_diff_45'
+b0 = '0+phighvt_b0_diff_45'
+b1 = '0+phighvt_b1_diff_45'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.18613842+phighvt_voff_diff_45' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.3987334+phighvt_nfactor_diff_45' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_45'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phighvt_eta0_diff_45'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.14095898+phighvt_pclm_diff_45'
+pdiblc1 = 0.39
+pdiblc2 = 0.00033122306
+pdiblcb = -0.225
+drout = 0.56
+pscbe1 = 8e+008
+pscbe2 = 1.1855131e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_45'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_45'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.3672742e-010+phighvt_agidl_diff_45'
+bgidl = '1e009+phighvt_bgidl_diff_45'
+cgidl = '300+phighvt_cgidl_diff_45'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.42906474+phighvt_kt1_diff_45'
+kt2 = -0.048559181
+at = 61761.743
+ute = -1.0481598
+ua1 = -4.3040399e-010
+ub1 = 8.9488555e-019
+uc1 = 6.6918782e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.46 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.45e-07 wmax = 5.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.0597+phighvt_vth0_diff_46' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0502231
+k2 = '-0.18874213+phighvt_k2_diff_46'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '85231+phighvt_vsat_diff_46'
+ua = '-2.3441206e-009+phighvt_ua_diff_46'
+ub = '2.0170582e-018+phighvt_ub_diff_46'
+uc = 1.9113717e-014
+rdsw = '531.92+phighvt_rdsw_diff_46'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.002497+phighvt_u0_diff_46'
+a0 = '1.0132+phighvt_a0_diff_46'
+keta = '0.04103419+phighvt_keta_diff_46'
+a1 = 0
+a2 = 0.95671944
+ags = '1.25+phighvt_ags_diff_46'
+b0 = '0+phighvt_b0_diff_46'
+b1 = '0+phighvt_b1_diff_46'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.25024889+phighvt_voff_diff_46' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.6818969+phighvt_nfactor_diff_46' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_46'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.18519279+phighvt_eta0_diff_46'
+etab = -0.018159526
+dsub = 0.28488048
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62190714+phighvt_pclm_diff_46'
+pdiblc1 = 0.17199343
+pdiblc2 = 0.0021176917
+pdiblcb = -0.075
+drout = 1
+pscbe1 = 7.8075686e+008
+pscbe2 = 9.1842717e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 7.9923957
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_46'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_46'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.0698583e-009+phighvt_agidl_diff_46'
+bgidl = '1e009+phighvt_bgidl_diff_46'
+cgidl = '300+phighvt_cgidl_diff_46'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.57223+phighvt_kt1_diff_46'
+kt2 = -0.093165
+at = 55755
+ute = -0.1632
+ua1 = 7.4358e-010
+ub1 = -6.474e-019
+uc1 = -4.1394e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.47 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 5.45e-07 wmax = 5.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.176e-008+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.087+phighvt_vth0_diff_47' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.4349469
+k2 = '0.033033416+phighvt_k2_diff_47'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109430+phighvt_vsat_diff_47'
+ua = '-7.9553952e-010+phighvt_ua_diff_47'
+ub = '6.7360576e-019+phighvt_ub_diff_47'
+uc = -4.8332508e-011
+rdsw = '531.92+phighvt_rdsw_diff_47'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0076558+phighvt_u0_diff_47'
+a0 = '1.1143+phighvt_a0_diff_47'
+keta = '-0.043531+phighvt_keta_diff_47'
+a1 = 0
+a2 = 0.49215603
+ags = '1.25+phighvt_ags_diff_47'
+b0 = '0+phighvt_b0_diff_47'
+b1 = '0+phighvt_b1_diff_47'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.16857953+phighvt_voff_diff_47' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.4777762+phighvt_nfactor_diff_47' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_47'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0081705343+phighvt_eta0_diff_47'
+etab = -0.00099999893
+dsub = 1
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.4325064+phighvt_pclm_diff_47'
+pdiblc1 = 0.069872306
+pdiblc2 = 0.00080363033
+pdiblcb = -0.225
+drout = 0.51197505
+pscbe1 = 1.3828473e+008
+pscbe2 = 7.8174856e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.4421206
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_47'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_47'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.133969e-010+phighvt_agidl_diff_47'
+bgidl = '1e009+phighvt_bgidl_diff_47'
+cgidl = '300+phighvt_cgidl_diff_47'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.48388+phighvt_kt1_diff_47'
+kt2 = -0.059544
+at = 80000
+ute = -0.2386
+ua1 = 1.6656e-009
+ub1 = -8.6644e-019
+uc1 = -6.7349e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.75e-06
+sbref = 1.74e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.48 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 6.35e-07 wmax = 6.45e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.089+phighvt_vth0_diff_48' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.0716985
+k2 = '-0.20271345+phighvt_k2_diff_48'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '78922+phighvt_vsat_diff_48'
+ua = '-2.2873261e-009+phighvt_ua_diff_48'
+ub = '1.8906205e-018+phighvt_ub_diff_48'
+uc = -1.3332403e-011
+rdsw = '531.92+phighvt_rdsw_diff_48'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.002687+phighvt_u0_diff_48'
+a0 = '0.87713+phighvt_a0_diff_48'
+keta = '-0.012556+phighvt_keta_diff_48'
+a1 = 0
+a2 = 0.74869385
+ags = '1.25+phighvt_ags_diff_48'
+b0 = '0+phighvt_b0_diff_48'
+b1 = '0+phighvt_b1_diff_48'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.2025646+phighvt_voff_diff_48' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.4131397+phighvt_nfactor_diff_48' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_48'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phighvt_eta0_diff_48'
+etab = -0.0008517151
+dsub = 0.4339823
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62077198+phighvt_pclm_diff_48'
+pdiblc1 = 0.35507256
+pdiblc2 = 0.0012371251
+pdiblcb = -1.1390625
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 5.1545636e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.353946
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_48'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_48'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.035337e-009+phighvt_agidl_diff_48'
+bgidl = '1e009+phighvt_bgidl_diff_48'
+cgidl = '300+phighvt_cgidl_diff_48'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.58669+phighvt_kt1_diff_48'
+kt2 = -0.050786
+at = 18280
+ute = -0.48325
+ua1 = 3.4998e-010
+ub1 = -1.1387e-019
+uc1 = -2.9301e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.49 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 8.35e-07 wmax = 8.45e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-009
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-2.026e-08+phighvt_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '9.364e-009+phighvt_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-009
+dwb = -1.7864e-008
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -6.0e-08
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-009*phighvt_toxe_mult' dev/gauss = '4.23e-09*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phighvt_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.118+phighvt_vth0_diff_49' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.1107151
+k2 = '-0.21107143+phighvt_k2_diff_49'
+k3 = -13.778
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '87856+phighvt_vsat_diff_49'
+ua = '-2.3304507e-009+phighvt_ua_diff_49'
+ub = '1.9668119e-018+phighvt_ub_diff_49'
+uc = 8.5835281e-014
+rdsw = '531.92+phighvt_rdsw_diff_49'
+prwb = -0.32348
+prwg = 0.02
+wr = 1
+u0 = '0.0026289+phighvt_u0_diff_49'
+a0 = '1.1333+phighvt_a0_diff_49'
+keta = '0.00077411+phighvt_keta_diff_49'
+a1 = 0
+a2 = 0.64520655
+ags = '1.25+phighvt_ags_diff_49'
+b0 = '0+phighvt_b0_diff_49'
+b1 = '0+phighvt_b1_diff_49'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20169156+phighvt_voff_diff_49' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.8349351+phighvt_nfactor_diff_49' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phighvt_tvoff_diff_49'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.21948109+phighvt_eta0_diff_49'
+etab = -0.027368442
+dsub = 0.30975235
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.62207689+phighvt_pclm_diff_49'
+pdiblc1 = 0.1677304
+pdiblc2 = 0.0038590567
+pdiblcb = -0.3796875
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 7.3782091e-009
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 8.3514574
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phighvt_pdits_diff_49'
+pditsl = 0
+pditsd = '0+phighvt_pditsd_diff_49'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2.2929704e-010+phighvt_agidl_diff_49'
+bgidl = '1e009+phighvt_bgidl_diff_49'
+cgidl = '300+phighvt_cgidl_diff_49'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-009
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.53627+phighvt_kt1_diff_49'
+kt2 = -0.096259
+at = 41259
+ute = -0.05
+ua1 = 7.4358e-010
+ub1 = -4.726e-019
+uc1 = -2.1939e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.2556
+jss = 2.17e-05
+jsws = 8.200000000000001e-10
+xtis = 2.0
+bvs = 12.8
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019551
+tpbsw = 0.00014242
+tpbswg = 0
+tcj = 0.0012407
+tcjsw = 0
+tcjswg = 2e-012
+cgdo = '6e-11*phighvt_overlap_mult'
+cgso = '6e-11*phighvt_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '7.6e-012*phighvt_overlap_mult'
+cgdl = '7.6e-012*phighvt_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0+phighvt_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4
+voffcv = -0.1375
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbs = 0.6587
+cjsws = '9.2435e-011*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbsws = 0.7418
+cjswgs = '2.4701e-010*phighvt_pjunction_mult'
+mjswgs = 0.70393
+pbswgs = 1.3925
*
*STRESS PARAMETERS
*
+saref = 1.04e-06
+sbref = 1.04e-06
+wlod = 0.0e-6
+kvth0 = 2.65e-08
+lkvth0 = 0
+wkvth0 = 0.25e-6
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = 4.5e-08
+lku0 = 0
+wku0 = 0.25e-6
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = 0.4
+steta0 = 0
+tku0 = 0
******
.model phighvt_mod.50 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.79e-07 lmax = 1.81e-07 wmin = 6.39e-07 wmax = 6.41e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-1.176e-08+phighvt_lint_diff'
+vth0 = '-1.07095600111241+phighvt_vth0_diff_50' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.07169844263695
+k2 = '-0.211129143952937+phighvt_k2_diff_50'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.433982266549591
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.294825592439786+phighvt_voff_diff_50' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.2192092567159+phighvt_nfactor_diff_50' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.490000000445447+phighvt_eta0_diff_50'
+etab = -0.000851725200424369
+u0 = '0.00265505728828512+phighvt_u0_diff_50'
+ua = '-2.37404714270393e-09+phighvt_ua_diff_50'
+ub = '2.05009051203083e-18+phighvt_ub_diff_50'
+uc = -1.33324015760675e-11
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '84343.5987161124+phighvt_vsat_diff_50'
+a0 = '0.877130207986808+phighvt_a0_diff_50'
+ags = '1.25000000856918+phighvt_ags_diff_50'
+a1 = 0.0
+a2 = 0.748693858171036
+b0 = '0.0+phighvt_b0_diff_50'
+b1 = '0.0+phighvt_b1_diff_50'
+keta = '-0.0125559961514956+phighvt_keta_diff_50'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.620771983425462+phighvt_pclm_diff_50'
+pdiblc1 = 0.355072622104209
+pdiblc2 = 0.00123712400757925
+pdiblcb = -1.13906250407908
+drout = 1.00000002589623
+pscbe1 = 800000000.056997
+pscbe2 = 5.1545629766385e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_50'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_50'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_50'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.35394585616203
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '1.03533670551374e-09+phighvt_agidl_diff_50'
+bgidl = '1000000043.63208+phighvt_bgidl_diff_50'
+cgidl = '300.0+phighvt_cgidl_diff_50'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.586690043055798+phighvt_kt1_diff_50'
+kt2 = -0.0507860334352673
+at = 18280.0055530857
+ute = -0.483250041537429
+ua1 = 3.49980190249352e-10
+ub1 = -1.13870110915159e-19
+uc1 = -2.93009994723167e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_50'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.1e-06
+sbref = 1.1e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.51 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 1.999e-06 wmax = 2.001e-06
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07847201664917+phighvt_vth0_diff_51' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.08557951889565
+k2 = '-0.216553287031283+phighvt_k2_diff_51'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.291811607936174
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.274450017810204+phighvt_voff_diff_51' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.18742003558682+phighvt_nfactor_diff_51' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.219981332437539+phighvt_eta0_diff_51'
+etab = -0.000443489865924838
+u0 = '0.00332799993611169+phighvt_u0_diff_51'
+ua = '-2.2206406139198e-09+phighvt_ua_diff_51'
+ub = '1.90440730167961e-18+phighvt_ub_diff_51'
+uc = -9.80655408020155e-12
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '67715.0255112324+phighvt_vsat_diff_51'
+a0 = '0.900359976212471+phighvt_a0_diff_51'
+ags = '1.25+phighvt_ags_diff_51'
+a1 = 0.0
+a2 = 0.761053992788159
+b0 = '0.0+phighvt_b0_diff_51'
+b1 = '0.0+phighvt_b1_diff_51'
+keta = '-0.0106370129267269+phighvt_keta_diff_51'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.628638745580517+phighvt_pclm_diff_51'
+pdiblc1 = 0.160259391056057
+pdiblc2 = 0.0035027346670166
+pdiblcb = -1.13906214402687
+drout = 0.999999942221289
+pscbe1 = 800000000.0
+pscbe2 = 9.30010169804745e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_51'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_51'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_51'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.03946235626706
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '1.31012667814403e-10+phighvt_agidl_diff_51'
+bgidl = '1000000000.0+phighvt_bgidl_diff_51'
+cgidl = '300.0+phighvt_cgidl_diff_51'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.538380001312198+phighvt_kt1_diff_51'
+kt2 = -0.0531410025950031
+at = 21075.9960193155
+ute = -0.2789999847785
+ua1 = 4.17969968549234e-10
+ub1 = -1.41749973441109e-19
+uc1 = -2.61909999842536e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_51'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.52 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 1.119e-06 wmax = 1.121e-06
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07810236233414+phighvt_vth0_diff_52' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.07801730927071
+k2 = '-0.21237395755418+phighvt_k2_diff_52'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.302559137958808
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.298266481655818+phighvt_voff_diff_52' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.18013117522574+phighvt_nfactor_diff_52' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.201890675816754+phighvt_eta0_diff_52'
+etab = -0.0115703919135681
+u0 = '0.00360890031315458+phighvt_u0_diff_52'
+ua = '-2.02168292270409e-09+phighvt_ua_diff_52'
+ub = '1.73435492221335e-18+phighvt_ub_diff_52'
+uc = 1.63174963510485e-14
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '78561.9811960684+phighvt_vsat_diff_52'
+a0 = '0.91681021358675+phighvt_a0_diff_52'
+ags = '1.25+phighvt_ags_diff_52'
+a1 = 0.0
+a2 = 0.8065085362853
+b0 = '0.0+phighvt_b0_diff_52'
+b1 = '0.0+phighvt_b1_diff_52'
+keta = '-0.000522512448261736+phighvt_keta_diff_52'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.622227158030407+phighvt_pclm_diff_52'
+pdiblc1 = 0.153116553170111
+pdiblc2 = 0.00283442620341279
+pdiblcb = -0.33749917040476
+drout = 1.00000079909858
+pscbe1 = 800000000.0
+pscbe2 = 8.3376919564349e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_52'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_52'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_52'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.22945978680628
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '5.36378173239407e-10+phighvt_agidl_diff_52'
+bgidl = '1000000000.0+phighvt_bgidl_diff_52'
+cgidl = '300.0+phighvt_cgidl_diff_52'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.5662699807296+phighvt_kt1_diff_52'
+kt2 = -0.0962589671051477
+at = 22258.9879460876
+ute = -0.00500007502147426
+ua1 = 7.43579433877174e-10
+ub1 = -4.72599350433354e-19
+uc1 = -2.19389545270368e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_52'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.53 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 1.649e-06 wmax = 1.651e-06
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.08357901503254+phighvt_vth0_diff_53' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.08881830915389
+k2 = '-0.218252474805795+phighvt_k2_diff_53'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.295873540877598
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.279273238442158+phighvt_voff_diff_53' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.50857000762125+phighvt_nfactor_diff_53' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.152229183476801+phighvt_eta0_diff_53'
+etab = -0.0454157070816712
+u0 = '0.00420239993275247+phighvt_u0_diff_53'
+ua = '-1.83797766294352e-09+phighvt_ua_diff_53'
+ub = '1.5790164508923e-18+phighvt_ub_diff_53'
+uc = -1.18317630978375e-11
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '80136.1961431871+phighvt_vsat_diff_53'
+a0 = '0.653449991929456+phighvt_a0_diff_53'
+ags = '1.25+phighvt_ags_diff_53'
+a1 = 0.0
+a2 = 0.698670227892085
+b0 = '2.10730023619567e-24+phighvt_b0_diff_53'
+b1 = '0.0+phighvt_b1_diff_53'
+keta = '-0.017747994973756+phighvt_keta_diff_53'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.666591065931766+phighvt_pclm_diff_53'
+pdiblc1 = 0.166075379298761
+pdiblc2 = 0.00400915914297712
+pdiblcb = -0.0750000013226959
+drout = 0.999999942221289
+pscbe1 = 799626457.465883
+pscbe2 = 7.76490646951502e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_53'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_53'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_53'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.25503194584925
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '6.70514827923578e-10+phighvt_agidl_diff_53'
+bgidl = '1000000000.0+phighvt_bgidl_diff_53'
+cgidl = '300.0+phighvt_cgidl_diff_53'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.544379998162922+phighvt_kt1_diff_53'
+kt2 = -0.0531410025950031
+at = 29266.0042263279
+ute = -0.2789999847785
+ua1 = 4.77969989544405e-10
+ub1 = -1.41749973441109e-19
+uc1 = -5.23910049842536e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_53'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.54 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.79e-07 lmax = 1.81e-07 wmin = 8.39e-07 wmax = 8.41e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-1.176e-08+phighvt_lint_diff'
+vth0 = '-1.06983901824397+phighvt_vth0_diff_54' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.11071507046776
+k2 = '-0.221261446175075+phighvt_k2_diff_54'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.309752008404068
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.250694559258463+phighvt_voff_diff_54' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '3.24943499188874+phighvt_nfactor_diff_54' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.21948113761247+phighvt_eta0_diff_54'
+etab = -0.0273684881509353
+u0 = '0.0028217205352961+phighvt_u0_diff_54'
+ua = '-2.33838595896284e-09+phighvt_ua_diff_54'
+ub = '2.04285173756036e-18+phighvt_ub_diff_54'
+uc = 8.58364703942434e-14
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '81709.5428748529+phighvt_vsat_diff_54'
+a0 = '1.1332999816516+phighvt_a0_diff_54'
+ags = '1.25000000856918+phighvt_ags_diff_54'
+a1 = 0.0
+a2 = 0.645206550408959
+b0 = '0.0+phighvt_b0_diff_54'
+b1 = '0.0+phighvt_b1_diff_54'
+keta = '0.000774133574642732+phighvt_keta_diff_54'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.622076876838991+phighvt_pclm_diff_54'
+pdiblc1 = 0.167730384011285
+pdiblc2 = 0.00385905435402245
+pdiblcb = -0.379687613491591
+drout = 1.00000015593246
+pscbe1 = 800000000.056997
+pscbe2 = 7.37820873129092e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_54'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_54'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_54'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.35145700583427
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '2.2929704297289e-10+phighvt_agidl_diff_54'
+bgidl = '1000000043.63208+phighvt_bgidl_diff_54'
+cgidl = '300.0+phighvt_cgidl_diff_54'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.536270002860088+phighvt_kt1_diff_54'
+kt2 = -0.0962590027256385
+at = 41259.0011413909
+ute = -0.0500000411568378
+ua1 = 7.43579873322196e-10
+ub1 = -4.72600108632185e-19
+uc1 = -2.1939001841099e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_54'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.1e-06
+sbref = 1.1e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.55 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.79e-07 lmax = 1.81e-07 wmin = 1.679e-06 wmax = 1.681e-06
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-1.176e-08+phighvt_lint_diff'
+vth0 = '-1.07581019562893+phighvt_vth0_diff_55' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.961428255393082
+k2 = '-0.162005866831761+phighvt_k2_diff_55'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.562303405039308
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.257872947389937+phighvt_voff_diff_55' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '1.9870370822327+phighvt_nfactor_diff_55' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.49+phighvt_eta0_diff_55'
+etab = -0.000625
+u0 = '0.0037413403490566+phighvt_u0_diff_55'
+ua = '-2.09956058459119e-09+phighvt_ua_diff_55'
+ub = '1.86166461966667e-18+phighvt_ub_diff_55'
+uc = -8.324553995283e-12
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '118371.997325472+phighvt_vsat_diff_55'
+a0 = '0.758099999261006+phighvt_a0_diff_55'
+ags = '1.24999997272013+phighvt_ags_diff_55'
+a1 = 0.0
+a2 = 0.662874470440252
+b0 = '0.0+phighvt_b0_diff_55'
+b1 = '0.0+phighvt_b1_diff_55'
+keta = '-0.0730519999606918+phighvt_keta_diff_55'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.734690420259434+phighvt_pclm_diff_55'
+pdiblc1 = 0.461536473183962
+pdiblc2 = 0.00987941513820755
+pdiblcb = -0.224616327814465
+drout = 0.684413503600629
+pscbe1 = 800000000.518868
+pscbe2 = 9.31998164677673e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_55'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_55'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_55'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.94639467130503
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '3.20550031084906e-10+phighvt_agidl_diff_55'
+bgidl = '999999975.393082+phighvt_bgidl_diff_55'
+cgidl = '300.0+phighvt_cgidl_diff_55'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.515879992940252+phighvt_kt1_diff_55'
+kt2 = -0.0487919994941038
+at = 9870.39612421382
+ute = -0.0199999991650943
+ua1 = 8.53380055896226e-10
+ub1 = -4.69150049528303e-19
+uc1 = -2.62609955581761e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_55'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.1e-06
+sbref = 1.1e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.56 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 3.59e-07 wmax = 3.61e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.0751186382512+phighvt_vth0_diff_56' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.915817576187918
+k2 = '-0.191354581465138+phighvt_k2_diff_56'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.632029034401906
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.252068561266462+phighvt_voff_diff_56' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '3.06838122728761+phighvt_nfactor_diff_56' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.709002668530266+phighvt_eta0_diff_56'
+etab = 0.0119734813782515
+u0 = '0.00388572612584648+phighvt_u0_diff_56'
+ua = '-2.00244775464247e-09+phighvt_ua_diff_56'
+ub = '1.8126637343077e-18+phighvt_ub_diff_56'
+uc = -3.29420596540557e-11
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '123538.047249085+phighvt_vsat_diff_56'
+a0 = '0.999069843161314+phighvt_a0_diff_56'
+ags = '1.24999999958161+phighvt_ags_diff_56'
+a1 = 0.0
+a2 = 0.402340703539025
+b0 = '0.0+phighvt_b0_diff_56'
+b1 = '0.0+phighvt_b1_diff_56'
+keta = '-0.059104614991198+phighvt_keta_diff_56'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.626485556768748+phighvt_pclm_diff_56'
+pdiblc1 = 0.156960184691247
+pdiblc2 = 0.00484688249504905
+pdiblcb = -0.816101282025912
+drout = 0.999999999574636
+pscbe1 = 813825374.586324
+pscbe2 = 9.67821053778591e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_56'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_56'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_56'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.66184153982975
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_56'
+bgidl = '1000000000.29118+phighvt_bgidl_diff_56'
+cgidl = '300.0+phighvt_cgidl_diff_56'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.486150550825388+phighvt_kt1_diff_56'
+kt2 = -0.0168844133026869
+at = 23782.3869663337
+ute = -0.163199999725863
+ua1 = 9.15790453404767e-10
+ub1 = -6.16621741789699e-19
+uc1 = -1.12531129150376e-10
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_56'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.57 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 5.39e-07 wmax = 5.41e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07193945626403+phighvt_vth0_diff_57' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.04559183372851
+k2 = '-0.215394224823221+phighvt_k2_diff_57'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.296842320875032
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.295820509983861+phighvt_voff_diff_57' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.37678785711657+phighvt_nfactor_diff_57' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.203241924319623+phighvt_eta0_diff_57'
+etab = -0.0171212205536331
+u0 = '0.00323243409794057+phighvt_u0_diff_57'
+ua = '-2.18318076500906e-09+phighvt_ua_diff_57'
+ub = '1.98261706093836e-18+phighvt_ub_diff_57'
+uc = -1.1166432829987e-12
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '95226.0713945394+phighvt_vsat_diff_57'
+a0 = '1.01271311354065+phighvt_a0_diff_57'
+ags = '1.24999999958161+phighvt_ags_diff_57'
+a1 = 0.0
+a2 = 0.937616983056422
+b0 = '0.0+phighvt_b0_diff_57'
+b1 = '0.0+phighvt_b1_diff_57'
+keta = '0.0375836653953772+phighvt_keta_diff_57'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.622064900782435+phighvt_pclm_diff_57'
+pdiblc1 = 0.171475423595225
+pdiblc2 = 0.00221173256568527
+pdiblcb = -0.100536440190325
+drout = 0.999999999572752
+pscbe1 = 781896315.787039
+pscbe2 = 9.20129159085351e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_57'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_57'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_57'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.01546307141611
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_57'
+bgidl = '1000000000.29118+phighvt_bgidl_diff_57'
+cgidl = '300.0+phighvt_cgidl_diff_57'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.569263924940705+phighvt_kt1_diff_57'
+kt2 = -0.0905365684029605
+at = 54653.3062207582
+ute = -0.163199999620793
+ua1 = 7.49513926681154e-10
+ub1 = -6.46339460623668e-19
+uc1 = -4.38452014066302e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_57'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.58 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 6.29e-07 wmax = 6.31e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07104001525555+phighvt_vth0_diff_58' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.06962463166075
+k2 = '-0.211623873447702+phighvt_k2_diff_58'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.419583614144431
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.29507245959929+phighvt_voff_diff_58' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.23204351258518+phighvt_nfactor_diff_58' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.460564927265331+phighvt_eta0_diff_58'
+etab = -0.00252312162912138
+u0 = '0.00270856257428232+phighvt_u0_diff_58'
+ua = '-2.35623809165088e-09+phighvt_ua_diff_58'
+ub = '2.04416033113035e-18+phighvt_ub_diff_58'
+uc = -1.20430539022406e-11
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '85296.9435202141+phighvt_vsat_diff_58'
+a0 = '0.890270208902574+phighvt_a0_diff_58'
+ags = '1.25000000001081+phighvt_ags_diff_58'
+a1 = 0.0
+a2 = 0.768782773323293
+b0 = '0.0+phighvt_b0_diff_58'
+b1 = '0.0+phighvt_b1_diff_58'
+keta = '-0.00738082267404039+phighvt_keta_diff_58'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.620881601802915+phighvt_pclm_diff_58'
+pdiblc1 = 0.337392702882825
+pdiblc2 = 0.00132216097657461
+pdiblcb = -1.03630654165047
+drout = 0.999999999645444
+pscbe1 = 798141699.766914
+pscbe2 = 5.54371049699427e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_58'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_58'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_58'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.31903127511159
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_58'
+bgidl = '1000000000.27512+phighvt_bgidl_diff_58'
+cgidl = '300.0+phighvt_cgidl_diff_58'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.585293605067905+phighvt_kt1_diff_58'
+kt2 = -0.0548785185501603
+at = 21898.9416489813
+ute = -0.452342938291501
+ua1 = 3.87989740344634e-10
+ub1 = -1.65392727017805e-19
+uc1 = -3.04688147574841e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_58'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.59 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 6.99e-07 wmax = 7.01e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07055203747247+phighvt_vth0_diff_59' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.08580882942068
+k2 = '-0.214793482817612+phighvt_k2_diff_59'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.389054614996031
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.278865636416663+phighvt_voff_diff_59' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.59179008241638+phighvt_nfactor_diff_59' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.392167002521586+phighvt_eta0_diff_59'
+etab = -0.0104414730939175
+u0 = '0.00271533057175788+phighvt_u0_diff_59'
+ua = '-2.36115028548009e-09+phighvt_ua_diff_59'
+ub = '2.04747266512321e-18+phighvt_ub_diff_59'
+uc = -8.47970537223393e-12
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '83391.0155162216+phighvt_vsat_diff_59'
+a0 = '0.969773722807888+phighvt_a0_diff_59'
+ags = '1.25000000001081+phighvt_ags_diff_59'
+a1 = 0.0
+a2 = 0.711267731601041
+b0 = '0.0+phighvt_b0_diff_59'
+b1 = '0.0+phighvt_b1_diff_59'
+keta = '-0.0077351739167264+phighvt_keta_diff_59'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.621243899946381+phighvt_pclm_diff_59'
+pdiblc1 = 0.287320383025818
+pdiblc2 = 0.00218534505453089
+pdiblcb = -0.864434997791972
+drout = 0.999999999569002
+pscbe1 = 799999999.981033
+pscbe2 = 5.95874362758602e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_59'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_59'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_59'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.3530459991552
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_59'
+bgidl = '1000000000.27513+phighvt_bgidl_diff_59'
+cgidl = '300.0+phighvt_cgidl_diff_59'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.568455637988552+phighvt_kt1_diff_59'
+kt2 = -0.0672312825069631
+at = 26590.3412304301
+ute = -0.326565404147138
+ua1 = 4.92325198112386e-10
+ub1 = -2.43604483811876e-19
+uc1 = -2.66385372292091e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_59'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.60 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 7.49e-07 wmax = 7.51e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07026603980288+phighvt_vth0_diff_60' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.09579867425115
+k2 = '-0.217387760765392+phighvt_k2_diff_60'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.357246668535634
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.267566285842438+phighvt_voff_diff_60' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.85556990654462+phighvt_nfactor_diff_60' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.322903101140967+phighvt_eta0_diff_60'
+etab = -0.0172308393417141
+u0 = '0.00275800311393476+phighvt_u0_diff_60'
+ua = '-2.35201958584296e-09+phighvt_ua_diff_60'
+ub = '2.04561928756625e-18+phighvt_ub_diff_60'
+uc = -5.04408775493168e-12
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '82716.6038226786+phighvt_vsat_diff_60'
+a0 = '1.03536371655589+phighvt_a0_diff_60'
+ags = '1.25000000001081+phighvt_ags_diff_60'
+a1 = 0.0
+a2 = 0.684770751621682
+b0 = '0.0+phighvt_b0_diff_60'
+b1 = '0.0+phighvt_b1_diff_60'
+keta = '-0.00432212074264378+phighvt_keta_diff_60'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.62157801025884+phighvt_pclm_diff_60'
+pdiblc1 = 0.239353130407191
+pdiblc2 = 0.00285666674423421
+pdiblcb = -0.670003950087693
+drout = 0.999999999569002
+pscbe1 = 799999999.981033
+pscbe2 = 6.52808779145287e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_60'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_60'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_60'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.35240881580645
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_60'
+bgidl = '1000000000.27513+phighvt_bgidl_diff_60'
+cgidl = '300.0+phighvt_cgidl_diff_60'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.555546056520191+phighvt_kt1_diff_60'
+kt2 = -0.0788742297123681
+at = 32473.9047482058
+ute = -0.21563569030694
+ua1 = 5.93102890797911e-10
+ub1 = -3.3545403082025e-19
+uc1 = -2.47535642267383e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_60'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.61 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 7.89e-07 wmax = 7.91e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07006394020185+phighvt_vth0_diff_61' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.10285797531987
+k2 = '-0.219221001361228+phighvt_k2_diff_61'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.334769655703878
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.259581625526074+phighvt_voff_diff_61' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '3.0419693177443+phighvt_nfactor_diff_61' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.273957923178976+phighvt_eta0_diff_61'
+etab = -0.0220285295183251
+u0 = '0.00278815756855406+phighvt_u0_diff_61'
+ua = '-2.34556739776593e-09+phighvt_ua_diff_61'
+ub = '2.04430960254203e-18+phighvt_ub_diff_61'
+uc = -2.61631640020886e-12
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '82240.0323373573+phighvt_vsat_diff_61'
+a0 = '1.08171273606723+phighvt_a0_diff_61'
+ags = '1.25000000001081+phighvt_ags_diff_61'
+a1 = 0.0
+a2 = 0.666046721142683
+b0 = '0.0+phighvt_b0_diff_61'
+b1 = '0.0+phighvt_b1_diff_61'
+keta = '-0.00191029450026639+phighvt_keta_diff_61'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.621814108549238+phighvt_pclm_diff_61'
+pdiblc1 = 0.205457180728222
+pdiblc2 = 0.00333105468538863
+pdiblcb = -0.53260969360584
+drout = 0.999999999569001
+pscbe1 = 799999999.981033
+pscbe2 = 6.93041354652335e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_61'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_61'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_61'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.35195855164609
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_61'
+bgidl = '1000000000.27513+phighvt_bgidl_diff_61'
+cgidl = '300.0+phighvt_cgidl_diff_61'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.546423530214438+phighvt_kt1_diff_61'
+kt2 = -0.0871016918046216
+at = 36631.5114912298
+ute = -0.137247460984637
+ua1 = 6.64317217521819e-10
+ub1 = -4.00359303761043e-19
+uc1 = -2.34215523530136e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_61'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.62 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 8.19e-07 wmax = 8.21e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.06992560723304+phighvt_vth0_diff_62' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.1076899199134
+k2 = '-0.220475816377538+phighvt_k2_diff_62'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.319384608434502
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.254116291795267+phighvt_voff_diff_62' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '3.16955583352185+phighvt_nfactor_diff_62' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.24045596799526+phighvt_eta0_diff_62'
+etab = -0.0253124485472229
+u0 = '0.00280879766486815+phighvt_u0_diff_62'
+ua = '-2.34115100937397e-09+phighvt_ua_diff_62'
+ub = '2.04341315041308e-18+phighvt_ub_diff_62'
+uc = -9.54557458696919e-13
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '81913.8290787754+phighvt_vsat_diff_62'
+a0 = '1.11343767484841+phighvt_a0_diff_62'
+ags = '1.25000000001081+phighvt_ags_diff_62'
+a1 = 0.0
+a2 = 0.653230512149571
+b0 = '0.0+phighvt_b0_diff_62'
+b1 = '0.0+phighvt_b1_diff_62'
+keta = '-0.000259449656147479+phighvt_keta_diff_62'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.621975712913002+phighvt_pclm_diff_62'
+pdiblc1 = 0.182256108950811
+pdiblc2 = 0.00365576335345378
+pdiblcb = -0.438566185852545
+drout = 0.999999999569001
+pscbe1 = 799999999.981033
+pscbe2 = 7.20579714868519e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_62'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_62'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_62'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.35165035520367
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_62'
+bgidl = '1000000000.27513+phighvt_bgidl_diff_62'
+cgidl = '300.0+phighvt_cgidl_diff_62'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.540179350906419+phighvt_kt1_diff_62'
+kt2 = -0.0927332182954322
+at = 39477.3067375863
+ute = -0.0835923502048591
+ua1 = 7.1306194134723e-10
+ub1 = -4.44785611638355e-19
+uc1 = -2.25098179604581e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_62'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.63 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.79e-07 lmax = 1.81e-07 wmin = 8.19e-07 wmax = 8.21e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-1.176e-08+phighvt_lint_diff'
+vth0 = '-1.06992562425025+phighvt_vth0_diff_63' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.10768988287566
+k2 = '-0.220475829959917+phighvt_k2_diff_63'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.319384288778231
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.254116290690764+phighvt_voff_diff_63' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '3.16955569641286+phighvt_nfactor_diff_63' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.240456012141059+phighvt_eta0_diff_63'
+etab = -0.0253124918524043
+u0 = '0.00280879816148047+phighvt_u0_diff_63'
+ua = '-2.34115097548295e-09+phighvt_ua_diff_63'
+ub = '2.04341299867443e-18+phighvt_ub_diff_63'
+uc = -9.54556263358326e-13
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '81913.7762607886+phighvt_vsat_diff_63'
+a0 = '1.11343767246333+phighvt_a0_diff_63'
+ags = '1.25000000883084+phighvt_ags_diff_63'
+a1 = 0.0
+a2 = 0.653230512297813
+b0 = '0.0+phighvt_b0_diff_63'
+b1 = '0.0+phighvt_b1_diff_63'
+keta = '-0.000259427474019525+phighvt_keta_diff_63'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.621975700968687+phighvt_pclm_diff_63'
+pdiblc1 = 0.182256099041279
+pdiblc2 = 0.00365576108529427
+pdiblcb = -0.438566290778736
+drout = 1.00000014412332
+pscbe1 = 800000000.092367
+pscbe2 = 7.20579676912272e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_63'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_63'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_63'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.35164997919705
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_63'
+bgidl = '1000000043.76336+phighvt_bgidl_diff_63'
+cgidl = '300.0+phighvt_cgidl_diff_63'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.540179356912575+phighvt_kt1_diff_63'
+kt2 = -0.0927332236807995
+at = 39477.3084346575
+ute = -0.0835923913034282
+ua1 = 7.13061837954044e-10
+ub1 = -4.44785720876955e-19
+uc1 = -2.25098194407179e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_63'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.1e-06
+sbref = 1.1e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.64 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 2.49e-07 lmax = 2.51e-07 wmin = 8.19e-07 wmax = 8.21e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-1.176e-08+phighvt_lint_diff'
+vth0 = '-1.05072276049759+phighvt_vth0_diff_64' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.577863902712096
+k2 = '-0.0179469684948697+phighvt_k2_diff_64'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.784590850821159
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.222875737669666+phighvt_voff_diff_64' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.41661831253614+phighvt_nfactor_diff_64' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.490000000534678+phighvt_eta0_diff_64'
+etab = -7.18045260867479e-05
+u0 = '0.00574001096693589+phighvt_u0_diff_64'
+ua = '-1.32599936581963e-09+phighvt_ua_diff_64'
+ub = '1.3166834291246e-18+phighvt_ub_diff_64'
+uc = -9.89799750999406e-13
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '96750.2832616657+phighvt_vsat_diff_64'
+a0 = '0.615122486656536+phighvt_a0_diff_64'
+ags = '1.50607608496406+phighvt_ags_diff_64'
+a1 = 0.0
+a2 = 0.796021941247706
+b0 = '0.0+phighvt_b0_diff_64'
+b1 = '0.0+phighvt_b1_diff_64'
+keta = '-0.0317026683516117+phighvt_keta_diff_64'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.637201200109745+phighvt_pclm_diff_64'
+pdiblc1 = 0.404629799819182
+pdiblc2 = 0.00857651181139204
+pdiblcb = -0.288019851903862
+drout = 0.528681191381859
+pscbe1 = 799973295.56758
+pscbe2 = 8.84471866309014e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_64'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_64'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_64'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.90994629846007
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_64'
+bgidl = '1240180091.56982+phighvt_bgidl_diff_64'
+cgidl = '300.0+phighvt_cgidl_diff_64'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075560999735681*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.47010003888781e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.522777693066561+phighvt_kt1_diff_64'
+kt2 = -0.0528131862121549
+at = 67887.696205111
+ute = -0.83458849565544
+ua1 = 2.95036202917305e-10
+ub1 = -1.69321451147667e-19
+uc1 = -9.78860164868713e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_64'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.1e-06
+sbref = 1.1e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.65 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 4.99e-07 lmax = 5.01e-07 wmin = 8.19e-07 wmax = 8.21e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-1.176e-08+phighvt_lint_diff'
+vth0 = '-1.05257645277475+phighvt_vth0_diff_65' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.509746853558371
+k2 = '0.0010565381342913+phighvt_k2_diff_65'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.319727369402999
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.207851692258142+phighvt_voff_diff_65' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.07922336976018+phighvt_nfactor_diff_65' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.452641007151395+phighvt_eta0_diff_65'
+etab = -0.000654076810703508
+u0 = '0.00682669236101063+phighvt_u0_diff_65'
+ua = '-1.20060863280976e-09+phighvt_ua_diff_65'
+ub = '1.23616934688699e-18+phighvt_ub_diff_65'
+uc = -3.11715075302948e-11
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '98242.5308183485+phighvt_vsat_diff_65'
+a0 = '0.747334484184591+phighvt_a0_diff_65'
+ags = '1.24999999994093+phighvt_ags_diff_65'
+a1 = 0.0
+a2 = 0.951482129181008
+b0 = '8.77074029519858e-17+phighvt_b0_diff_65'
+b1 = '3.64639825577157e-20+phighvt_b1_diff_65'
+keta = '-0.0381687151274896+phighvt_keta_diff_65'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.0592215633585798+phighvt_pclm_diff_65'
+pdiblc1 = 0.0155649705144554
+pdiblc2 = 9.9333572416857e-05
+pdiblcb = -0.0354604781743123
+drout = 0.962160634824741
+pscbe1 = 748693433.4003
+pscbe2 = 1.4666228889085e-08
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_65'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_65'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_65'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.72758012904933
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_65'
+bgidl = '1000000000.0+phighvt_bgidl_diff_65'
+cgidl = '300.0+phighvt_cgidl_diff_65'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-2.56e-09+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.533868339386531+phighvt_kt1_diff_65'
+kt2 = -0.034749082504185
+at = 38573.0516436388
+ute = -0.201655304750119
+ua1 = 2.4966480698116e-09
+ub1 = -2.31670144462701e-18
+uc1 = -1.85406901254478e-10
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_65'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.75e-06
+sbref = 1.74e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.66 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 8.59e-07 wmax = 8.61e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07104381577694+phighvt_vth0_diff_66' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.10594770014062
+k2 = '-0.219965620603534+phighvt_k2_diff_66'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.308703572208419
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.257630636013059+phighvt_voff_diff_66' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '3.09352853651824+phighvt_nfactor_diff_66' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.216916404856265+phighvt_eta0_diff_66'
+etab = -0.025065060370094
+u0 = '0.0029364922909248+phighvt_u0_diff_66'
+ua = '-2.2922101231441e-09+phighvt_ua_diff_66'
+ub = '1.99787255718905e-18+phighvt_ub_diff_66'
+uc = 7.56985290191209e-14
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '81250.6743978597+phighvt_vsat_diff_66'
+a0 = '1.10173536063403+phighvt_a0_diff_66'
+ags = '1.25000000032035+phighvt_ags_diff_66'
+a1 = 0.0
+a2 = 0.668724680856823
+b0 = '0.0+phighvt_b0_diff_66'
+b1 = '0.0+phighvt_b1_diff_66'
+keta = '0.000585058556570317+phighvt_keta_diff_66'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.622098795779318+phighvt_pclm_diff_66'
+pdiblc1 = 0.165599715192776
+pdiblc2 = 0.00370966311736148
+pdiblcb = -0.373536489052468
+drout = 0.999999994584648
+pscbe1 = 799999999.950522
+pscbe2 = 7.51810401745175e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_66'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_66'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_66'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.33366985234279
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_66'
+bgidl = '999999999.964758+phighvt_bgidl_diff_66'
+cgidl = '300.0+phighvt_cgidl_diff_66'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.540644055101813+phighvt_kt1_diff_66'
+kt2 = -0.0962590000996655
+at = 38488.7652643574
+ute = -0.0434389167673217
+ua1 = 7.43579997969786e-10
+ub1 = -4.7259999135388e-19
+uc1 = -2.19389998907211e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_66'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
.model phighvt_mod.67 pmos
*
***MODEL FLAG PARAMETERS
*
+lmin = 1.49e-07 lmax = 1.51e-07 wmin = 9.39e-07 wmax = 9.41e-07
+level = 54.0
+version = 4.5
+binunit = 2.0
+mobmod = 0.0
+capmod = 2.0
+igcmod = 0.0
+igbmod = 0.0
+geomod = 0.0
+diomod = 1.0
+rdsmod = 0.0
+rbodymod = 1.0
+rgatemod = 0.0
+permod = 1.0
+acnqsmod = 0.0
+trnqsmod = 0.0
+fnoimod = 1.0
+tnoimod = 1.0
+tempmod = 0.0
***PROCESS PARAMETERS
+toxe = '4.23e-09*phighvt_toxe_mult' dev/gauss = '4.23e-9*phighvt_toxe_mult*(phighvt_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+toxm = 4.23e-09
+dtox = 0.0
+epsrox = 3.9
+xj = 1.5e-07
+ngate = 1.0e+23
+ndep = 1.7e+17
+nsd = 1.0e+20
+rsh = '1.0*phighvt_rshp_mult'
+rshg = 0.1
***BASIC MODEL PARAMETERS
+wint = '9.364e-09+phighvt_wint_diff'
+lint = '-2.026e-08+phighvt_lint_diff'
+vth0 = '-1.07533996982605+phighvt_vth0_diff_67' dev/gauss = 'phighvt_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.08894802372141
+k2 = '-0.215345000473891+phighvt_k2_diff_67'
+k3 = -13.778
+k3b = 2.0
+w0 = 0.0
+dvt0 = 4.05
+dvt1 = 0.3
+dvt2 = 0.03
+dvt0w = -4.254
+dvt1w = 1147200.0
+dvt2w = -0.00896
+dsub = 0.304963807285077
+minv = 0.0
+voffl = 0.0
+lpe0 = 0.0
+lpeb = 0.0
+vbm = -3.0
+dvtp0 = 0.0
+dvtp1 = 0.0
+phin = 0.0
+cdsc = 0.0
+cdscb = 0.0
+cdscd = 0.0
+cit = 1.0e-05
+voff = '-0.282363418797658+phighvt_voff_diff_67' dev/gauss = 'phighvt_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.53759417857265+phighvt_nfactor_diff_67' dev/gauss = 'phighvt_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+eta0 = '0.207771195728855+phighvt_eta0_diff_67'
+etab = -0.0168516215301728
+u0 = '0.00334574934342391+phighvt_u0_diff_67'
+ua = '-2.12755536041125e-09+phighvt_ua_diff_67'
+ub = '1.83748442782511e-18+phighvt_ub_diff_67'
+uc = 3.95528374555728e-14
+ud = 0.0
+up = 0.0
+lp = 1.0
+eu = 1.67
+vtl = 0.0
+xn = 3.0
+vsat = '79614.2284598555+phighvt_vsat_diff_67'
+a0 = '0.989181612672348+phighvt_a0_diff_67'
+ags = '1.25000000032035+phighvt_ags_diff_67'
+a1 = 0.0
+a2 = 0.752586056400402
+b0 = '0.0+phighvt_b0_diff_67'
+b1 = '0.0+phighvt_b1_diff_67'
+keta = '-8.906293497013e-05+phighvt_keta_diff_67'
+dwg = -5.722e-09
+dwb = -1.7864e-08
+pclm = '0.622176905948925+phighvt_pclm_diff_67'
+pdiblc1 = 0.158002074710554
+pdiblc2 = 0.00317695286612851
+pdiblcb = -0.351603091257726
+drout = 0.999999995175411
+pscbe1 = 799999999.950522
+pscbe2 = 8.01694390444676e-09
+pvag = 0.0
+delta = 0.01
+fprout = 0.0
+pdits = '0.0+phighvt_pdits_diff_67'
+pditsl = 0.0
+pditsd = '0.0+phighvt_pditsd_diff_67'
+lambda = 0.0
+lc = 5.0e-09
***PARAMETERS FOR ASYMMETRIC AND BIAS-DEPENDENT RDS MODEL******
+rdsw = '531.92+phighvt_rdsw_diff_67'
+rsw = 0.0
+rdw = 0.0
+rdswmin = 0.0
+rdwmin = 0.0
+rswmin = 0.0
+prwb = -0.32348
+prwg = 0.02
+wr = 1.0
***IMPACT IONIZATION CURRENT MODEL PARAMTERS******************
+alpha0 = 1.0e-10
+alpha1 = 1.0e-10
+beta0 = 8.27024270366315
***GIDL INDUCED DRAIN LEAKAGE MODEL PARAMETERS*****************
+agidl = '0.0+phighvt_agidl_diff_67'
+bgidl = '999999999.964757+phighvt_bgidl_diff_67'
+cgidl = '300.0+phighvt_cgidl_diff_67'
+egidl = 0.1
***GATE DIELECTRIC TUNNELING CURRENT MODEL PARAMETERS**********
+toxref = 4.23e-09
+dlcig = 0.0
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1.0
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3.0
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+nigc = 1.0
+poxedge = 1.0
+pigcd = 1.0
+ntox = 1.0
+vfbsdoff = 0.0
***CHARGE AND CAPACITANCE MODEL PARAMETERS********************
+dlc = '-1.106e-08+phighvt_dlc_diff+phighvt_dlc_rotweak'
+dwc = '0.0+phighvt_dwc_diff'
+xpart = 0.0
+cgso = '6.0e-11*phighvt_overlap_mult'
+cgdo = '6.0e-11*phighvt_overlap_mult'
+cgbo = 0.0
+cgdl = '7.6e-12*phighvt_overlap_mult'
+cgsl = '7.6e-12*phighvt_overlap_mult'
+clc = 1.0e-07
+cle = 0.6
+cf = 1.2e-11
+ckappas = 0.6
+vfbcv = -0.1446893
+acde = 0.552
+moin = 14.504
+noff = 4.0
+voffcv = -0.1375
***HIGH-SPEED/RF MODEL PARAMETERS******************************
+xrcrg1 = 12.0
+xrcrg2 = 1.0
+rbpb = 50.0
+rbpd = 50.0
+rbps = 50.0
+rbdb = 50.0
+rbsb = 50.0
+gbmin = 1.0e-12
***FLICKER AND THERMAL NOISE MODEL PARAMETERS******************
+ef = 0.88
+noia = 1.2e+41
+noib = 2.0e+25
+noic = 0.0
+em = 41000000.0
+ntnoi = 1.0
+lintnoi = -6.0e-08
+af = 1.0
+kf = 0.0
+tnoia = 1.5
+tnoib = 3.5
+rnoia = 0.577
+rnoib = 0.37
***LAYOUT-DEPENDENT PARASITICS MODEL PARAMETERS****************
+xl = 0.0
+xw = 0.0
+dmcg = 0.0
+dmdg = 0.0
+dmcgt = 0.0
+xgw = 0.0
+xgl = 0.0
+ngcon = 1.0
***ASYMMETRIC SOURCE/DRAIN JUNCTION DIODE MODEL PARAMETERS*****
+jss = 2.17e-05
+jsws = 8.2e-10
+ijthsfwd = 0.1
+ijthsrev = 0.1
+bvs = 12.8
+xjbvs = 1.0
+pbs = 0.6587
+cjs = '0.00075561*phighvt_ajunction_mult'
+mjs = 0.34629
+pbsws = 0.7418
+cjsws = '9.2435e-11*phighvt_pjunction_mult'
+mjsws = 0.26859
+pbswgs = 1.3925
+cjswgs = '2.4701e-10*phighvt_pjunction_mult'
+mjswgs = 0.70393
***TEMPERATURE DEPENDENCE PARAMETERS***************************
+tnom = 30.0
+kt1 = '-0.556241137832508+phighvt_kt1_diff_67'
+kt2 = -0.096259000063518
+at = 28610.6128567872
+ute = -0.0200432924793255
+ua1 = 7.43579998498136e-10
+ub1 = -4.72599991749167e-19
+uc1 = -2.19389998945569e-11
+kt1l = 0.0
+prt = 0.0
+tvoff = '0.0+phighvt_tvoff_diff_67'
+njs = 1.2556
+tpb = 0.0019551
+tcj = 0.0012407
+tpbsw = 0.00014242
+tcjsw = 0.0
+tpbswg = 0.0
+tcjswg = 2.0e-12
+xtis = 2.0
+tvfbsdoff = 0.0
***DW AND DL PARAMETERS****************************************
+ll = 0.0
+wl = 0.0
+lln = 1.0
+wln = 1.0
+lw = 0.0
+ww = 0.0
+lwn = 1.0
+wwn = 1.0
+lwl = 0.0
+wwl = 0.0
+llc = 0.0
+wlc = 0.0
+lwc = 0.0
+wwc = 0.0
+lwlc = 0.0
+wwlc = 0.0
***STRESS PARAMETERS*******************************************
+saref = 1.04e-06
+sbref = 1.04e-06
+kvth0 = 2.65e-08
+lkvth0 = 0.0
+wkvth0 = 2.5e-07
+pkvth0 = 0.0
+llodvth = 0.0
+wlodvth = 1.0
+wlod = 0.0
+stk2 = 0.0
+lodk2 = 1.0
+lodeta0 = 1.0
+ku0 = 4.5e-08
+lku0 = 0.0
+wku0 = 2.5e-07
+pku0 = 0.0
+tku0 = 0.0
+llodku0 = 0.0
+wlodku0 = 1.0
+kvsat = 0.4
+steta0 = 0.0
***WELL PROXIMITY EFFECT PARAMETERS****************************
******
minst d g s b phighvt_mod l=l w=w ad=ad as=as pd=pd ps=ps nrd=nrd nrs=nrs rdc=rdc rsc=rsc m=m nf=nf geo=geo delvto=delvto sa=sa sb=sb sd=sd dtemp=dtemp
.ends