blob: 2e41e9ad6c035fb94724950cec4645b229089185 [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: pxg
* Command Line: /home/cydev/v/4.4/bin/lnx86/bsimtran nmos_bsim4.rf nmos -p -nntvnative ntvnative_bin.pm3 ntvnative_ov.pm ndiode_nativeiv.pmd ndiode_nativecv.pmd ntvnativ_bsimtranoutput.pm3
* Working Directory: /home/pxg/rams/s8/models.3.1/rev_model/ntvnative/combined
* Time: Fri May 11 11:50:03 2007
* Rule File: nmos_bsim4.rf
* Output File: ntvnativ_bsimtranoutput.pm3
* Input Files:
* (1) ntvnative_bin.pm3
* (2) ntvnative_ov.pm
* (3) ndiode_nativeiv.pmd
* (4) ndiode_nativecv.pmd
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 NMOS Model
.subckt ntvnative d g s b l=100.0u w=100.0u ad=0 as=0 pd=0 ps=0 nrd=1 nrs=1 rdc=0.0 rsc=0.0 m=1 dtemp=0 nf=1 geo=0.0 delvto=0.0 sa=0.0 sb=0.0 sd=0.0
.model ntvnative_mod.0 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.995e-06 wmax = 1.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.0007337+ntvnative_vth0_diff_0' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.27
+k2 = '0+ntvnative_k2_diff_0'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '116050+ntvnative_vsat_diff_0'
+ua = '5.1975e-009+ntvnative_ua_diff_0'
+ub = '5.727e-020+ntvnative_ub_diff_0'
+uc = 1.3541e-010
+rdsw = '0+ntvnative_rdsw_diff_0'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.091551+ntvnative_u0_diff_0'
+a0 = '0.00031139121+ntvnative_a0_diff_0'
+keta = '0.0070658+ntvnative_keta_diff_0'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_0'
+b0 = '0+ntvnative_b0_diff_0'
+b1 = '0+ntvnative_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_0' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.0354+ntvnative_nfactor_diff_0' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_0'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0.017338+ntvnative_eta0_diff_0'
+etab = 0
+dsub = 0.59286
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_0'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 6.234e-007
+alpha1 = 0
+beta0 = 21.814
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_0'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_0'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.33884+ntvnative_kt1_diff_0'
+kt2 = 0
+at = 40500
+ute = -1.716
+ua1 = 1e-009
+ub1 = -1.18e-017
+uc1 = -3.696e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.745e-06
+sbref = 1.74e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.1 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.0007337+ntvnative_vth0_diff_1' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.27
+k2 = '0+ntvnative_k2_diff_1'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.018557
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '125130+ntvnative_vsat_diff_1'
+ua = '4.848e-009+ntvnative_ua_diff_1'
+ub = '5.727e-020+ntvnative_ub_diff_1'
+uc = 1.3541e-010
+rdsw = '0+ntvnative_rdsw_diff_1'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.087889+ntvnative_u0_diff_1'
+a0 = '0.00031139121+ntvnative_a0_diff_1'
+keta = '0.019064+ntvnative_keta_diff_1'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_1'
+b0 = '0+ntvnative_b0_diff_1'
+b1 = '0+ntvnative_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_1' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.0354+ntvnative_nfactor_diff_1' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_1'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0.0017338+ntvnative_eta0_diff_1'
+etab = 1e-010
+dsub = 0.59286
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_1'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 4.8972e-007
+alpha1 = 0.03
+beta0 = 20.82
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_1'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_1'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.33884+ntvnative_kt1_diff_1'
+kt2 = -0.02
+at = 40500
+ute = -1.716
+ua1 = 1e-009
+ub1 = -1.2744e-017
+uc1 = -2.5133e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.745e-06
+sbref = 1.74e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.2 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.068092+ntvnative_vth0_diff_2' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.33502
+k2 = '0+ntvnative_k2_diff_2'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '118050+ntvnative_vsat_diff_2'
+ua = '4.145e-009+ntvnative_ua_diff_2'
+ub = '3.7798e-019+ntvnative_ub_diff_2'
+uc = 1.3541e-010
+rdsw = '0+ntvnative_rdsw_diff_2'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.083529+ntvnative_u0_diff_2'
+a0 = '0.00031139121+ntvnative_a0_diff_2'
+keta = '-0.016684+ntvnative_keta_diff_2'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_2'
+b0 = '0+ntvnative_b0_diff_2'
+b1 = '0+ntvnative_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_2' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.77345+ntvnative_nfactor_diff_2' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_2'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0+ntvnative_eta0_diff_2'
+etab = 0
+dsub = 0.071143
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_2'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 8.3952e-007
+alpha1 = 0.33
+beta0 = 23
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_2'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_2'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.29818+ntvnative_kt1_diff_2'
+kt2 = -0.02
+at = 37260
+ute = -1.613
+ua1 = 1e-009
+ub1 = -8.411e-018
+uc1 = -2.5133e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.95e-06
+sbref = 1.94e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.3 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.995e-06 wmax = 4.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.0007337+ntvnative_vth0_diff_3' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.27
+k2 = '0+ntvnative_k2_diff_3'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '118050+ntvnative_vsat_diff_3'
+ua = '5.05e-009+ntvnative_ua_diff_3'
+ub = '5.727e-020+ntvnative_ub_diff_3'
+uc = 1.3541e-010
+rdsw = '0+ntvnative_rdsw_diff_3'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.087889+ntvnative_u0_diff_3'
+a0 = '0.00031139121+ntvnative_a0_diff_3'
+keta = '0.0070658+ntvnative_keta_diff_3'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_3'
+b0 = '0+ntvnative_b0_diff_3'
+b1 = '0+ntvnative_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_3' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.0354+ntvnative_nfactor_diff_3' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_3'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0.017338+ntvnative_eta0_diff_3'
+etab = 0
+dsub = 0.59286
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_3'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 7.6956e-007
+alpha1 = 0
+beta0 = 22.396
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_3'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_3'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.33884+ntvnative_kt1_diff_3'
+kt2 = -0.02
+at = 40500
+ute = -1.716
+ua1 = 1e-009
+ub1 = -1.2744e-017
+uc1 = -2.5133e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.745e-06
+sbref = 1.74e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.4 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.022934+ntvnative_vth0_diff_4' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.30326
+k2 = '0+ntvnative_k2_diff_4'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '133130+ntvnative_vsat_diff_4'
+ua = '4.1034e-009+ntvnative_ua_diff_4'
+ub = '4.971e-020+ntvnative_ub_diff_4'
+uc = 2.1124e-011
+rdsw = '0+ntvnative_rdsw_diff_4'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.084373+ntvnative_u0_diff_4'
+a0 = '0.00031139121+ntvnative_a0_diff_4'
+keta = '0.030502+ntvnative_keta_diff_4'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_4'
+b0 = '0+ntvnative_b0_diff_4'
+b1 = '0+ntvnative_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_4' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.0354+ntvnative_nfactor_diff_4' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_4'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0.00020806+ntvnative_eta0_diff_4'
+etab = 1e-010
+dsub = 0.59286
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_4'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 5.4233e-007
+alpha1 = 0
+beta0 = 21.174
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_4'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_4'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35239+ntvnative_kt1_diff_4'
+kt2 = -0.02
+at = 40500
+ute = -1.5444
+ua1 = 1e-009
+ub1 = -9.4306e-018
+uc1 = -1.2064e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.745e-06
+sbref = 1.74e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.5 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.007535+ntvnative_vth0_diff_5' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.33965
+k2 = '0+ntvnative_k2_diff_5'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '127800+ntvnative_vsat_diff_5'
+ua = '3.7751e-009+ntvnative_ua_diff_5'
+ub = '4.4739e-020+ntvnative_ub_diff_5'
+uc = 6.2248e-011
+rdsw = '0+ntvnative_rdsw_diff_5'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.079311+ntvnative_u0_diff_5'
+a0 = '0.00031139121+ntvnative_a0_diff_5'
+keta = '0.0018301+ntvnative_keta_diff_5'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_5'
+b0 = '0+ntvnative_b0_diff_5'
+b1 = '0+ntvnative_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_5' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.0354+ntvnative_nfactor_diff_5' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_5'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0.00020806+ntvnative_eta0_diff_5'
+etab = 1e-010
+dsub = 0.59286
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_5'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 5.3596e-007
+alpha1 = 0
+beta0 = 21.074
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_5'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_5'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.33884+ntvnative_kt1_diff_5'
+kt2 = -0.02
+at = 40500
+ute = -1.5444
+ua1 = 1e-009
+ub1 = -8.6659e-018
+uc1 = -2.5133e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.95e-06
+sbref = 1.94e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.6 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.071092+ntvnative_vth0_diff_6' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.40202
+k2 = '0+ntvnative_k2_diff_6'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '117770+ntvnative_vsat_diff_6'
+ua = '2.9844e-009+ntvnative_ua_diff_6'
+ub = '3.7798e-019+ntvnative_ub_diff_6'
+uc = 7.3121e-011
+rdsw = '0+ntvnative_rdsw_diff_6'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.073506+ntvnative_u0_diff_6'
+a0 = '0.00031139121+ntvnative_a0_diff_6'
+keta = '0+ntvnative_keta_diff_6'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_6'
+b0 = '0+ntvnative_b0_diff_6'
+b1 = '0+ntvnative_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_6' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.77345+ntvnative_nfactor_diff_6' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_6'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0+ntvnative_eta0_diff_6'
+etab = 0
+dsub = 0.071143
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_6'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 8.5632e-007
+alpha1 = 0.09
+beta0 = 21.989
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_6'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_6'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.30496+ntvnative_kt1_diff_6'
+kt2 = -0.02
+at = 28350
+ute = -1.613
+ua1 = 1e-009
+ub1 = -6.8818e-018
+uc1 = -1.3069e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 2.34e-06
+sbref = 2.34e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.7 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.011467+ntvnative_vth0_diff_7' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.2808
+k2 = '0+ntvnative_k2_diff_7'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '128010+ntvnative_vsat_diff_7'
+ua = '4.4602e-009+ntvnative_ua_diff_7'
+ub = '8.0178e-020+ntvnative_ub_diff_7'
+uc = 7.0413e-011
+rdsw = '0+ntvnative_rdsw_diff_7'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.084373+ntvnative_u0_diff_7'
+a0 = '0.00031139121+ntvnative_a0_diff_7'
+keta = '0.019064+ntvnative_keta_diff_7'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_7'
+b0 = '0+ntvnative_b0_diff_7'
+b1 = '0+ntvnative_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_7' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '2.0354+ntvnative_nfactor_diff_7' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_7'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0.00020806+ntvnative_eta0_diff_7'
+etab = 1e-010
+dsub = 0.59286
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_7'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 3.9877e-007
+alpha1 = 0.15
+beta0 = 20.36
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_7'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_7'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34562+ntvnative_kt1_diff_7'
+kt2 = -0.02
+at = 40500
+ute = -1.613
+ua1 = 1e-009
+ub1 = -1.1724e-017
+uc1 = -2.5133e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.745e-06
+sbref = 1.74e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model ntvnative_mod.8 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '0+ntvnative_lint_diff' dev/gauss = 'ntvnative_lint_slope/sqrt(E(*,w))'
+ll = 0
+lw = 0
+lwl = 0
+wint = '0+ntvnative_wint_diff' dev/gauss = 'ntvnative_wint_slope/sqrt(E(*,l))'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.89
+rnoib = 0.38
+tnoia = 6.4e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*ntvnative_toxe_mult' dev/gauss = '1.16e-008*ntvnative_toxe_mult*(ntvnative_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*ntvnative_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.071092+ntvnative_vth0_diff_8' dev/gauss = 'ntvnative_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 0.33502
+k2 = '0+ntvnative_k2_diff_8'
+k3 = 0
+dvt0 = 1e-010
+dvt1 = 0.536
+dvt2 = -0.05
+dvt0w = 0
+dvt1w = 5000000
+dvt2w = -0.032
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0.01855708
+lpe0 = -1e-010
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '120770+ntvnative_vsat_diff_8'
+ua = '4.145e-009+ntvnative_ua_diff_8'
+ub = '3.7798e-019+ntvnative_ub_diff_8'
+uc = 1.3541e-010
+rdsw = '0+ntvnative_rdsw_diff_8'
+prwb = 0
+prwg = 0
+wr = 1
+u0 = '0.083529+ntvnative_u0_diff_8'
+a0 = '0.00031139121+ntvnative_a0_diff_8'
+keta = '0.0047834+ntvnative_keta_diff_8'
+a1 = 0
+a2 = 0.6218093
+ags = '0.00014554757+ntvnative_ags_diff_8'
+b0 = '0+ntvnative_b0_diff_8'
+b1 = '0+ntvnative_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.098774+ntvnative_voff_diff_8' dev/gauss = 'ntvnative_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.77345+ntvnative_nfactor_diff_8' dev/gauss = 'ntvnative_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+ntvnative_tvoff_diff_8'
+cit = -3.3686011e-037
+cdsc = 0
+cdscb = -0.0001
+cdscd = 1.5e-005
+eta0 = '0+ntvnative_eta0_diff_8'
+etab = 0
+dsub = 0.071143
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -2.9752837e-011
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '2.8944111+ntvnative_pclm_diff_8'
+pdiblc1 = 0.87012255
+pdiblc2 = 0.032974
+pdiblcb = -0.05
+drout = 0.27268
+pscbe1 = 4.24e+009
+pscbe2 = 1e-008
+pvag = 5.2718232
+delta = 0.01
+alpha0 = 3.498e-007
+alpha1 = 0.35
+beta0 = 21.582
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '5.666761e-016+ntvnative_pdits_diff_8'
+pditsl = 0
+pditsd = '0+ntvnative_pditsd_diff_8'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 0
+bgidl = 2.3e+009
+cgidl = 0.8
+egidl = 0.5
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.30496+ntvnative_kt1_diff_8'
+kt2 = -0.02
+at = 34830
+ute = -1.6817
+ua1 = 1e-009
+ub1 = -9.9403e-018
+uc1 = -2.5133e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.5e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.5764
+jss = 0.00042966
+jsws = 8.040000000000001e-10
+xtis = 0
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.0019685
+tpbsw = 0.001
+tpbswg = 0
+tcj = 0.00083
+tcjsw = 0
+tcjswg = 0
+cgdo = '3.2646e-010*ntvnative_overlap_mult'
+cgso = '3.2646e-010*ntvnative_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*ntvnative_overlap_mult'
+cgdl = '5e-011*ntvnative_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5233e-008+ntvnative_dlc_diff+ntvnative_dlc_rotweak'
+dwc = '0+ntvnative_dwc_diff'
+vfbcv = -1
+acde = 0.4
+moin = 15
+noff = 4.00
+voffcv = -0.14208
+ngate = 1e23
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008602*ntvnative_ajunction_mult'
+mjs = 0.28329
+pbs = 0.66345
+cjsws = '8.5152e-011*ntvnative_pjunction_mult'
+mjsws = 0.057926
+pbsws = 1
+cjswgs = '3.58e-011*ntvnative_pjunction_mult'
+mjswgs = 0.33
+pbswgs = 0.2442
*
*STRESS PARAMETERS
*
+saref = 1.95e-06
+sbref = 1.94e-06
+wlod = '0+ntvnative_wlod_diff'
+kvth0 = '0+ntvnative_kvth0_diff'
+lkvth0 = '0+ntvnative_lkvth0_diff'
+wkvth0 = '0+ntvnative_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+ntvnative_ku0_diff'
+lku0 = '0+ntvnative_lku0_diff'
+wku0 = '0+ntvnative_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+ntvnative_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
minst d g s b ntvnative_mod l=l w=w ad=ad as=as pd=pd ps=ps nrd=nrd nrs=nrs rdc=rdc rsc=rsc m=m nf=nf geo=geo delvto=delvto sa=sa sb=sb sd=sd dtemp=dtemp
.ends