blob: 518dff39c1e0eae901235fc37dc795598701e1c5 [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: ovr
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m2.rf pmos -p -npshort_rf_base pshort_rf_base_m2_b.pm pshort_rf_base_m2_b_bsimtranout.pm
* Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined
* Time: Mon May 12 16:28:26 2008
* Rule File: pmos_bsim4_RF_m2.rf
* Output File: pshort_rf_base_m2_b_bsimtranout.pm
* Input Files:
* (1) pshort_rf_base_m2_b.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.0 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.62e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.022+pshort_rf_base_m2_b_vth0_diff_0' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_0'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.784e+04+pshort_rf_base_m2_b_vsat_diff_0'
+ua = '-2.45e-09+pshort_rf_base_m2_b_ua_diff_0'
+ub = '2.075e-18+pshort_rf_base_m2_b_ub_diff_0'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_0'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00307+pshort_rf_base_m2_b_u0_diff_0'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_0'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_0'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_0'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.2969+pshort_rf_base_m2_b_voff_diff_0' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.23+pshort_rf_base_m2_b_nfactor_diff_0' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1799
+etab = -0.07835
+dsub = 0.2663
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.4678
+pdiblc1 = 0.235
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4527
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.05627
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.556+pshort_rf_base_m2_b_kt1_diff_0'
+kt2 = -0.122
+at = 4.554e+04
+ute = -0.39
+ua1 = 1.346e-10
+ub1 = 4.516e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '800*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '6e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 2e-12
+cgdo = '1.6e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.505e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '-7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0024*pshort_rf_base_b_ajunction_mult'
+mjs = 0.0862
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps1p65p18m2x4_sim.pm ps1p65xp18m2x4_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 17:09:12 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps1p65xp18m2x4_bsimtranoutput.pm
* Input Files:
* (1) ps1p65p18m2x4_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.1 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.62e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.984+pshort_rf_base_m2_b_vth0_diff_1' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_1'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.217e+04+pshort_rf_base_m2_b_vsat_diff_1'
+ua = '-2.37e-09+pshort_rf_base_m2_b_ua_diff_1'
+ub = '1.99e-18+pshort_rf_base_m2_b_ub_diff_1'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_1'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00305+pshort_rf_base_m2_b_u0_diff_1'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_1'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_1'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_1'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3374+pshort_rf_base_m2_b_voff_diff_1' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.99+pshort_rf_base_m2_b_nfactor_diff_1' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1799
+etab = -0.07835
+dsub = 0.2663
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.4678
+pdiblc1 = 7.656e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.5264
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.0521
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.556+pshort_rf_base_m2_b_kt1_diff_1'
+kt2 = -0.122
+at = 4.554e+04
+ute = -0.39
+ua1 = 1.346e-10
+ub1 = 4.516e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '800*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '7e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 2e-12
+cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.505e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '-2e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0023*pshort_rf_base_b_ajunction_mult'
+mjs = 0.0862
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps1p65p25m2x4_sim.pm ps1p65xp25m2x4_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 18:54:09 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps1p65xp25m2x4_bsimtranoutput.pm
* Input Files:
* (1) ps1p65p25m2x4_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.2 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.62e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.945+pshort_rf_base_m2_b_vth0_diff_2' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_2'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.4e+04+pshort_rf_base_m2_b_vsat_diff_2'
+ua = '-2.199e-09+pshort_rf_base_m2_b_ua_diff_2'
+ub = '1.855e-18+pshort_rf_base_m2_b_ub_diff_2'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_2'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.003331+pshort_rf_base_m2_b_u0_diff_2'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_2'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_2'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_2'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3104+pshort_rf_base_m2_b_voff_diff_2' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.87+pshort_rf_base_m2_b_nfactor_diff_2' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1799
+etab = -0.07835
+dsub = 0.3036
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.4678
+pdiblc1 = 0.1
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.7475
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.0521
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.556+pshort_rf_base_m2_b_kt1_diff_2'
+kt2 = -0.122
+at = 4.554e+04
+ute = -0.39
+ua1 = 1.346e-10
+ub1 = 4.516e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '800*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 2e-12
+cgdo = '1.4e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.505e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '-4e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0023*pshort_rf_base_b_ajunction_mult'
+mjs = 0.0862
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: ovr
* Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m2.rf pmos -p -npshort_rf_base ps3p15m2x2_iccap_ovr.pm ps3p15m2x2_bsimtranout.pm
* Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined
* Time: Mon Apr 14 11:45:36 2008
* Rule File: pmos_bsim4_RF_m2.rf
* Output File: ps3p15m2x2_bsimtranout.pm
* Input Files:
* (1) ps3p15m2x2_iccap_ovr.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.3 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.04+pshort_rf_base_m2_b_vth0_diff_3' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_3'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.2e+04+pshort_rf_base_m2_b_vsat_diff_3'
+ua = '-2.307e-09+pshort_rf_base_m2_b_ua_diff_3'
+ub = '1.975e-18+pshort_rf_base_m2_b_ub_diff_3'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_3'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00431+pshort_rf_base_m2_b_u0_diff_3'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_3'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_3'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_3'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3297+pshort_rf_base_m2_b_voff_diff_3' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_3' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.006804
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.279
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.3382
+pdiblc1 = 0.24
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4851
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.1
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5203+pshort_rf_base_m2_b_kt1_diff_3'
+kt2 = -0.122
+at = 1.916e+04
+ute = -0.189
+ua1 = 1.346e-10
+ub1 = 9.851e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '400*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '8e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.555e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '4.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.52e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0024*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.8
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps3p18m2x2_sim.pm ps3xp18m2x2_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 17:38:53 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps3xp18m2x2_bsimtranoutput.pm
* Input Files:
* (1) ps3p18m2x2_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.4 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.005+pshort_rf_base_m2_b_vth0_diff_4' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_4'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.2e+04+pshort_rf_base_m2_b_vsat_diff_4'
+ua = '-2.197e-09+pshort_rf_base_m2_b_ua_diff_4'
+ub = '1.859e-18+pshort_rf_base_m2_b_ub_diff_4'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_4'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00429+pshort_rf_base_m2_b_u0_diff_4'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_4'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_4'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_4'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_4' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_4' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.006804
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.279
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.2949
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4851
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.1
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.52026+pshort_rf_base_m2_b_kt1_diff_4'
+kt2 = -0.122
+at = 1.916e+04
+ute = -0.189
+ua1 = 1.346e-10
+ub1 = 9.851e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '400*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.05e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.455e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.002*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.8
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '2.5e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps3p25m2x2_sim.pm ps3xp25m2x2_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 17:39:11 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps3xp25m2x2_bsimtranoutput.pm
* Input Files:
* (1) ps3p25m2x2_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.5 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.976+pshort_rf_base_m2_b_vth0_diff_5' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_5'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.976e+04+pshort_rf_base_m2_b_vsat_diff_5'
+ua = '-2.187e-09+pshort_rf_base_m2_b_ua_diff_5'
+ub = '1.834e-18+pshort_rf_base_m2_b_ub_diff_5'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_5'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00365+pshort_rf_base_m2_b_u0_diff_5'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_5'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_5'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_5'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_5' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_5' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.0063
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.31
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5899
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.5053
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.03747
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.52026+pshort_rf_base_m2_b_kt1_diff_5'
+kt2 = -0.122
+at = 1.916e+04
+ute = -0.189
+ua1 = 1.346e-10
+ub1 = 9.851e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '400*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.2e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.455e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0022*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps5p15m2x1_sim.pm ps5xp15m2x1_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 18:54:48 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps5xp15m2x1_bsimtranoutput.pm
* Input Files:
* (1) ps5p15m2x1_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.6 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.058+pshort_rf_base_m2_b_vth0_diff_6' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_6'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.7e+04+pshort_rf_base_m2_b_vsat_diff_6'
+ua = '-2.311e-09+pshort_rf_base_m2_b_ua_diff_6'
+ub = '1.91e-18+pshort_rf_base_m2_b_ub_diff_6'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_6'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.004327+pshort_rf_base_m2_b_u0_diff_6'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_6'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_6'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_6'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_6' dev/gauss = 'pshort_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.651+pshort_rf_base_m2_b_nfactor_diff_6' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.0066
+cdscb = 0
+cdscd = 0.0039
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.298
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5309
+pdiblc1 = 0.248
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4188
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.07242
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.56212+pshort_rf_base_m2_b_kt1_diff_6'
+kt2 = -0.122
+at = 2.705e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 5.223e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '200*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '7.4e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.505e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '1.3e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0022*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps5p18m2x1_sim.pm ps5xp18m2x1_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 17:41:37 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps5xp18m2x1_bsimtranoutput.pm
* Input Files:
* (1) ps5p18m2x1_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.7 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.021+pshort_rf_base_m2_b_vth0_diff_7' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_7'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.84e+04+pshort_rf_base_m2_b_vsat_diff_7'
+ua = '-2.321e-09+pshort_rf_base_m2_b_ua_diff_7'
+ub = '1.953e-18+pshort_rf_base_m2_b_ub_diff_7'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_7'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.0037+pshort_rf_base_m2_b_u0_diff_7'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_7'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_7'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_7'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3074+pshort_rf_base_m2_b_voff_diff_7' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_7' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.0046
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.2663
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.4186
+pdiblc1 = 0
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.627
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.05346
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.56212+pshort_rf_base_m2_b_kt1_diff_7'
+kt2 = -0.122
+at = 3.472e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 5.223e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '200*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.3e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.505e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '1.4e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0022*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps5p25m2x1_sim.pm ps5xp25m2x1_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 18:09:50 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps5xp25m2x1_bsimtranoutput.pm
* Input Files:
* (1) ps5p25m2x1_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m2_b.8 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.977+pshort_rf_base_m2_b_vth0_diff_8' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_8'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.708e+04+pshort_rf_base_m2_b_vsat_diff_8'
+ua = '-2.21e-09+pshort_rf_base_m2_b_ua_diff_8'
+ub = '1.824e-18+pshort_rf_base_m2_b_ub_diff_8'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_8'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00375+pshort_rf_base_m2_b_u0_diff_8'
+a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_8'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m2_b_ags_diff_8'
+b0 = '0+pshort_rf_base_m2_b_b0_diff_8'
+b1 = '0+pshort_rf_base_m2_b_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_8' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_8' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.298
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5899
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.5264
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.0457
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5162+pshort_rf_base_m2_b_kt1_diff_8'
+kt2 = -0.122
+at = 4.321e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 5.223e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '200*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '9.9e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.505e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '1e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0022*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: ovr
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m4.rf pmos -p -npshort_rf_base pshort_rf_base_m4_b.pm pshort_rf_base_m4_b_bsimtranout.pm
* Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined
* Time: Mon May 12 16:38:38 2008
* Rule File: pmos_bsim4_RF_m4.rf
* Output File: pshort_rf_base_m4_b_bsimtranout.pm
* Input Files:
* (1) pshort_rf_base_m4_b.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m4_b.0 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.044+pshort_rf_base_m4_b_vth0_diff_0' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_0'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.908e+04+pshort_rf_base_m4_b_vsat_diff_0'
+ua = '-2.368e-09+pshort_rf_base_m4_b_ua_diff_0'
+ub = '1.997e-18+pshort_rf_base_m4_b_ub_diff_0'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_0'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00329+pshort_rf_base_m4_b_u0_diff_0'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_0'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_0'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_0'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.345+pshort_rf_base_m4_b_voff_diff_0' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.36+pshort_rf_base_m4_b_nfactor_diff_0' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.00043
+cdscb = 0
+cdscd = 0
+eta0 = 0.1799
+etab = -0.07835
+dsub = 0.2663
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5085
+pdiblc1 = 0.12
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.379
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.05667
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5+pshort_rf_base_m4_b_kt1_diff_0'
+kt2 = -0.122
+at = 3.02e+04
+ute = -0.036
+ua1 = 1.992e-10
+ub1 = 4.398e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '1600*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '8.2e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 2e-12
+cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.455e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0015*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps1p65p18m4x2_sim.pm ps1p65xp18m4x2_bsimtranoutput.pm
* Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1
* Time: Wed Dec 12 17:05:19 2007
* Rule File: pmos_bsim4_RF.rf
* Output File: ps1p65xp18m4x2_bsimtranoutput.pm
* Input Files:
* (1) ps1p65p18m4x2_sim.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m4_b.1 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 25e6
+tnoib = 0.0e-6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.005+pshort_rf_base_m4_b_vth0_diff_1' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_1'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.808e+04+pshort_rf_base_m4_b_vsat_diff_1'
+ua = '-2.325e-09+pshort_rf_base_m4_b_ua_diff_1'
+ub = '1.939e-18+pshort_rf_base_m4_b_ub_diff_1'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_1'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.003126+pshort_rf_base_m4_b_u0_diff_1'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_1'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_1'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_1'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3248+pshort_rf_base_m4_b_voff_diff_1' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m4_b_nfactor_diff_1' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1799
+etab = -0.07835
+dsub = 0.2663
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5085
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.5264
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.0457
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.570+pshort_rf_base_m4_b_kt1_diff_1'
+kt2 = -0.122
+at = 2.796e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 4.398e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '1600*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '9.2e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 8.040000000000001e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 2e-12
+cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.455e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0015*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
.model pshort_rf_base_m4_b.2 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.62e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.955+pshort_rf_base_m4_b_vth0_diff_2' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_2'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.364e+04+pshort_rf_base_m4_b_vsat_diff_2'
+ua = '-2.199e-09+pshort_rf_base_m4_b_ua_diff_2'
+ub = '1.855e-18+pshort_rf_base_m4_b_ub_diff_2'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_2'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.003331+pshort_rf_base_m4_b_u0_diff_2'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_2'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_2'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_2'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3104+pshort_rf_base_m4_b_voff_diff_2' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.87+pshort_rf_base_m4_b_nfactor_diff_2' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1799
+etab = -0.07835
+dsub = 0.3036
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.4678
+pdiblc1 = 0.1
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.7475
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.0521
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.556+pshort_rf_base_m4_b_kt1_diff_2'
+kt2 = -0.122
+at = 3.598e+04
+ute = -0.39
+ua1 = 1.346e-10
+ub1 = 4.516e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '1600*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.25e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 2e-12
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.3e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.7e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '-4e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.002*pshort_rf_base_b_ajunction_mult'
+mjs = 0.0862
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '2.8e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1
******
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: ovr
* Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m4.rf pmos -p -npshort_rf_base ps3p15m4x1_iccap_ovr.pm ps3p15m4x1_bsimtranout.pm
* Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined
* Time: Mon Apr 14 11:45:57 2008
* Rule File: pmos_bsim4_RF_m4.rf
* Output File: ps3p15m4x1_bsimtranout.pm
* Input Files:
* (1) ps3p15m4x1_iccap_ovr.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model pshort_rf_base_m4_b.3 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.05+pshort_rf_base_m4_b_vth0_diff_3' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_3'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.1e+04+pshort_rf_base_m4_b_vsat_diff_3'
+ua = '-2.307e-09+pshort_rf_base_m4_b_ua_diff_3'
+ub = '1.975e-18+pshort_rf_base_m4_b_ub_diff_3'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_3'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00431+pshort_rf_base_m4_b_u0_diff_3'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_3'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_3'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_3'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3297+pshort_rf_base_m4_b_voff_diff_3' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m4_b_nfactor_diff_3' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.006804
+cdscb = 0
+cdscd = 0
+eta0 = 0.1612
+etab = -0.07835
+dsub = 0.279
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.3382
+pdiblc1 = 0.2448
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4366
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.1
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5515+pshort_rf_base_m4_b_kt1_diff_3'
+kt2 = -0.122
+at = 2.299e+04
+ute = -0.1436
+ua1 = 3.138e-10
+ub1 = 4.531e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '800*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.2e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.1e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.055e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '4.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0024*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.8
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '2.4e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
.model pshort_rf_base_m4_b.4 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.021+pshort_rf_base_m4_b_vth0_diff_4' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_4'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.912e+04+pshort_rf_base_m4_b_vsat_diff_4'
+ua = '-2.219e-09+pshort_rf_base_m4_b_ua_diff_4'
+ub = '1.915e-18+pshort_rf_base_m4_b_ub_diff_4'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_4'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.004419+pshort_rf_base_m4_b_u0_diff_4'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_4'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_4'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_4'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_4' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.242+pshort_rf_base_m4_b_nfactor_diff_4' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.006804
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.279
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.2949
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4851
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.1
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5203+pshort_rf_base_m4_b_kt1_diff_4'
+kt2 = -0.122
+at = 1.916e+04
+ute = -0.189
+ua1 = 1.346e-10
+ub1 = 9.851e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '800*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.25e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.3e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0022*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.8
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
.model pshort_rf_base_m4_b.5 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.983+pshort_rf_base_m4_b_vth0_diff_5' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_5'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.743e+04+pshort_rf_base_m4_b_vsat_diff_5'
+ua = '-2.187e-09+pshort_rf_base_m4_b_ua_diff_5'
+ub = '1.852e-18+pshort_rf_base_m4_b_ub_diff_5'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_5'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00365+pshort_rf_base_m4_b_u0_diff_5'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_5'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_5'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_5'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_5' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.531+pshort_rf_base_m4_b_nfactor_diff_5' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.0063
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.31
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5899
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.5053
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.03747
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5203+pshort_rf_base_m4_b_kt1_diff_5'
+kt2 = -0.122
+at = 1.916e+04
+ute = -0.189
+ua1 = 1.346e-10
+ub1 = 9.851e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '800*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.05e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.155e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.002*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '2.6e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
.model pshort_rf_base_m4_b.6 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.079+pshort_rf_base_m4_b_vth0_diff_6' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_6'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.7e+04+pshort_rf_base_m4_b_vsat_diff_6'
+ua = '-2.311e-09+pshort_rf_base_m4_b_ua_diff_6'
+ub = '1.948e-18+pshort_rf_base_m4_b_ub_diff_6'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_6'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.004327+pshort_rf_base_m4_b_u0_diff_6'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_6'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_6'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_6'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_6' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.103+pshort_rf_base_m4_b_nfactor_diff_6' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.0066
+cdscb = 0
+cdscd = 0.0039
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.298
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5309
+pdiblc1 = 0.248
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.4188
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.07242
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5621+pshort_rf_base_m4_b_kt1_diff_6'
+kt2 = -0.122
+at = 2.705e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 5.223e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '400*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '7.4e-07+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.52e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '1.3e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0022*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '3e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
.model pshort_rf_base_m4_b.7 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1.026+pshort_rf_base_m4_b_vth0_diff_7' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_7'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '7.213e+04+pshort_rf_base_m4_b_vsat_diff_7'
+ua = '-2.328e-09+pshort_rf_base_m4_b_ua_diff_7'
+ub = '1.953e-18+pshort_rf_base_m4_b_ub_diff_7'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_7'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.0037+pshort_rf_base_m4_b_u0_diff_7'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_7'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_7'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_7'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3074+pshort_rf_base_m4_b_voff_diff_7' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '6.012+pshort_rf_base_m4_b_nfactor_diff_7' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0.0046
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.2663
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.4186
+pdiblc1 = 0
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.627
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.05346
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5621+pshort_rf_base_m4_b_kt1_diff_7'
+kt2 = -0.122
+at = 3.472e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 5.223e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '400*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '0.85e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1.105e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '1.4e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0017*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '2.7e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******
.model pshort_rf_base_m4_b.8 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 4.23e-09
+xj = 1.5e-07
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '-1.399e-08+pshort_rf_base_b_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '7.304e-09+pshort_rf_base_b_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -5.722e-09
+dwb = -1.786e-08
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 3
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 1
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = -2.0e-07
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-09
+xn = 3
+rnoia = 0.69
+rnoib = 0.34
+tnoia = 2.5e+07
+tnoib = 0
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.6e+17
+nsd = 1e+20
+rshg = '49.2+pshort_rf_base_b_rshg_diff'
****
+rsh = 1
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9895+pshort_rf_base_m4_b_vth0_diff_8' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+k1 = 1.038
+k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_8'
+k3 = -15.85
+dvt0 = 4.585
+dvt1 = 0.294
+dvt2 = 0.015
+dvt0w = -4.977
+dvt1w = 1.147e+06
+dvt2w = -0.00896
+w0 = 0
+k3b = 2
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '6.488e+04+pshort_rf_base_m4_b_vsat_diff_8'
+ua = '-2.21e-09+pshort_rf_base_m4_b_ua_diff_8'
+ub = '1.851e-18+pshort_rf_base_m4_b_ub_diff_8'
+uc = 2.523e-13
+rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_8'
+prwb = -0.3235
+prwg = 0.1376
+wr = 1
+u0 = '0.00375+pshort_rf_base_m4_b_u0_diff_8'
+a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_8'
+keta = 0.0239
+a1 = 0
+a2 = 0.6419
+ags = '1.25+pshort_rf_base_m4_b_ags_diff_8'
+b0 = '0+pshort_rf_base_m4_b_b0_diff_8'
+b1 = '0+pshort_rf_base_m4_b_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 547.9
+rdwmin = 0
+rsw = 547.9
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_8' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '5.892+pshort_rf_base_m4_b_nfactor_diff_8' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))'
+cit = 0
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = 0.1874
+etab = -0.07835
+dsub = 0.298
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = 0.5899
+pdiblc1 = 4.4e-11
+pdiblc2 = 0
+pdiblcb = -0.0001934
+drout = 0.5264
+pscbe1 = 5.12e+08
+pscbe2 = 9.477e-08
+pvag = 0
+delta = 0.0457
+alpha0 = 1e-10
+alpha1 = 1e-10
+beta0 = 8.581
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = 0
+pditsl = 0
+pditsd = 0
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = 3.016e-10
+bgidl = 1e+09
+cgidl = 300
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 4.23e-09
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5162+pshort_rf_base_m4_b_kt1_diff_8'
+kt2 = -0.122
+at = 3.889e+04
+ute = -0.3
+ua1 = 1.346e-10
+ub1 = 5.223e-19
+uc1 = 6.005e-13
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 10
+xrcrg2 = 2
+rbpb = '400*pshort_rf_base_b_rbpb_mult'
+rbpd = 0.001
+rbps = 0.001
+rbdb = 1e+05
+rbsb = 1e+05
+gbmin = 1e-12
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 1.5e+42
+noib = 0.0
+noic = 0.0
+em = 4.1e+07
+af = 1
+ef = 1.0
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = '1.25e-06+pshort_rf_base_b_xgw_diff'
+xgl = 0
+ngcon = 2
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.363
+jss = 2.148e-05
+jsws = 8.04e-10
+xtis = 5.2
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.002039
+tpbsw = 0.001246
+tpbswg = 0
+tcj = 0.001241
+tcjsw = 0.0003736
+tcjswg = 0.001
+cgdo = '1.3e-10*pshort_rf_base_b_overlap_mult'
+cgso = '1e-10*pshort_rf_base_b_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult'
+cgdl = '1.32e-10*pshort_rf_base_b_overlap_mult'
+cf = 1.2e-11
+clc = 0
+cle = 0.6
+dlc = '1e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak'
+dwc = '0+pshort_rf_base_b_dwc_diff'
+vfbcv = -0.1447
+acde = 0.401
+moin = 15
+noff = 2.5
+voffcv = 0.05
+ngate = 1e+23
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.002*pshort_rf_base_b_ajunction_mult'
+mjs = 0.1362
+pbs = 0.9587
+cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult'
+mjsws = 0.92
+pbsws = 0.94
+cjswgs = '2.6e-10*pshort_rf_base_b_pjunction_mult'
+mjswgs = 0.12
+pbswgs = 1.4
******