| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m2.rf pmos -p -npshort_rf_base pshort_rf_base_m2_b.pm pshort_rf_base_m2_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined |
| * Time: Mon May 12 16:28:26 2008 |
| * Rule File: pmos_bsim4_RF_m2.rf |
| * Output File: pshort_rf_base_m2_b_bsimtranout.pm |
| * Input Files: |
| * (1) pshort_rf_base_m2_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.0 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.62e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.022+pshort_rf_base_m2_b_vth0_diff_0' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_0' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.784e+04+pshort_rf_base_m2_b_vsat_diff_0' |
| +ua = '-2.45e-09+pshort_rf_base_m2_b_ua_diff_0' |
| +ub = '2.075e-18+pshort_rf_base_m2_b_ub_diff_0' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_0' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00307+pshort_rf_base_m2_b_u0_diff_0' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_0' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_0' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_0' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2969+pshort_rf_base_m2_b_voff_diff_0' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.23+pshort_rf_base_m2_b_nfactor_diff_0' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1799 |
| +etab = -0.07835 |
| +dsub = 0.2663 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.4678 |
| +pdiblc1 = 0.235 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4527 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.05627 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.556+pshort_rf_base_m2_b_kt1_diff_0' |
| +kt2 = -0.122 |
| +at = 4.554e+04 |
| +ute = -0.39 |
| +ua1 = 1.346e-10 |
| +ub1 = 4.516e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '800*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '6e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 2e-12 |
| +cgdo = '1.6e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.505e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '-7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.0862 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps1p65p18m2x4_sim.pm ps1p65xp18m2x4_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 17:09:12 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps1p65xp18m2x4_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps1p65p18m2x4_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.1 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.62e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.984+pshort_rf_base_m2_b_vth0_diff_1' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_1' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.217e+04+pshort_rf_base_m2_b_vsat_diff_1' |
| +ua = '-2.37e-09+pshort_rf_base_m2_b_ua_diff_1' |
| +ub = '1.99e-18+pshort_rf_base_m2_b_ub_diff_1' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_1' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00305+pshort_rf_base_m2_b_u0_diff_1' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_1' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_1' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_1' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3374+pshort_rf_base_m2_b_voff_diff_1' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.99+pshort_rf_base_m2_b_nfactor_diff_1' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1799 |
| +etab = -0.07835 |
| +dsub = 0.2663 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.4678 |
| +pdiblc1 = 7.656e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.5264 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.0521 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.556+pshort_rf_base_m2_b_kt1_diff_1' |
| +kt2 = -0.122 |
| +at = 4.554e+04 |
| +ute = -0.39 |
| +ua1 = 1.346e-10 |
| +ub1 = 4.516e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '800*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '7e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 2e-12 |
| +cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.505e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '-2e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0023*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.0862 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps1p65p25m2x4_sim.pm ps1p65xp25m2x4_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 18:54:09 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps1p65xp25m2x4_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps1p65p25m2x4_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.2 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.62e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.945+pshort_rf_base_m2_b_vth0_diff_2' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_2' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.4e+04+pshort_rf_base_m2_b_vsat_diff_2' |
| +ua = '-2.199e-09+pshort_rf_base_m2_b_ua_diff_2' |
| +ub = '1.855e-18+pshort_rf_base_m2_b_ub_diff_2' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_2' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.003331+pshort_rf_base_m2_b_u0_diff_2' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_2' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_2' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_2' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3104+pshort_rf_base_m2_b_voff_diff_2' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.87+pshort_rf_base_m2_b_nfactor_diff_2' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1799 |
| +etab = -0.07835 |
| +dsub = 0.3036 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.4678 |
| +pdiblc1 = 0.1 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.7475 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.0521 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.556+pshort_rf_base_m2_b_kt1_diff_2' |
| +kt2 = -0.122 |
| +at = 4.554e+04 |
| +ute = -0.39 |
| +ua1 = 1.346e-10 |
| +ub1 = 4.516e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '800*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 2e-12 |
| +cgdo = '1.4e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.505e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '-4e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0023*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.0862 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m2.rf pmos -p -npshort_rf_base ps3p15m2x2_iccap_ovr.pm ps3p15m2x2_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined |
| * Time: Mon Apr 14 11:45:36 2008 |
| * Rule File: pmos_bsim4_RF_m2.rf |
| * Output File: ps3p15m2x2_bsimtranout.pm |
| * Input Files: |
| * (1) ps3p15m2x2_iccap_ovr.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.3 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.04+pshort_rf_base_m2_b_vth0_diff_3' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_3' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.2e+04+pshort_rf_base_m2_b_vsat_diff_3' |
| +ua = '-2.307e-09+pshort_rf_base_m2_b_ua_diff_3' |
| +ub = '1.975e-18+pshort_rf_base_m2_b_ub_diff_3' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_3' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00431+pshort_rf_base_m2_b_u0_diff_3' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_3' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_3' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_3' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_3' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3297+pshort_rf_base_m2_b_voff_diff_3' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_3' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.006804 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.279 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.3382 |
| +pdiblc1 = 0.24 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4851 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.1 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5203+pshort_rf_base_m2_b_kt1_diff_3' |
| +kt2 = -0.122 |
| +at = 1.916e+04 |
| +ute = -0.189 |
| +ua1 = 1.346e-10 |
| +ub1 = 9.851e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '8e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.555e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.52e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.8 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps3p18m2x2_sim.pm ps3xp18m2x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 17:38:53 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps3xp18m2x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps3p18m2x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.4 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.005+pshort_rf_base_m2_b_vth0_diff_4' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_4' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.2e+04+pshort_rf_base_m2_b_vsat_diff_4' |
| +ua = '-2.197e-09+pshort_rf_base_m2_b_ua_diff_4' |
| +ub = '1.859e-18+pshort_rf_base_m2_b_ub_diff_4' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_4' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00429+pshort_rf_base_m2_b_u0_diff_4' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_4' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_4' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_4' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_4' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_4' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_4' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.006804 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.279 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.2949 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4851 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.1 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.52026+pshort_rf_base_m2_b_kt1_diff_4' |
| +kt2 = -0.122 |
| +at = 1.916e+04 |
| +ute = -0.189 |
| +ua1 = 1.346e-10 |
| +ub1 = 9.851e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.05e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.455e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.002*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.8 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '2.5e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps3p25m2x2_sim.pm ps3xp25m2x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 17:39:11 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps3xp25m2x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps3p25m2x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.5 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.976+pshort_rf_base_m2_b_vth0_diff_5' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_5' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.976e+04+pshort_rf_base_m2_b_vsat_diff_5' |
| +ua = '-2.187e-09+pshort_rf_base_m2_b_ua_diff_5' |
| +ub = '1.834e-18+pshort_rf_base_m2_b_ub_diff_5' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_5' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00365+pshort_rf_base_m2_b_u0_diff_5' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_5' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_5' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_5' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_5' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_5' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_5' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.0063 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.31 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5899 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.5053 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.03747 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.52026+pshort_rf_base_m2_b_kt1_diff_5' |
| +kt2 = -0.122 |
| +at = 1.916e+04 |
| +ute = -0.189 |
| +ua1 = 1.346e-10 |
| +ub1 = 9.851e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.2e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.455e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps5p15m2x1_sim.pm ps5xp15m2x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 18:54:48 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps5xp15m2x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps5p15m2x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.6 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.058+pshort_rf_base_m2_b_vth0_diff_6' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_6' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.7e+04+pshort_rf_base_m2_b_vsat_diff_6' |
| +ua = '-2.311e-09+pshort_rf_base_m2_b_ua_diff_6' |
| +ub = '1.91e-18+pshort_rf_base_m2_b_ub_diff_6' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_6' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.004327+pshort_rf_base_m2_b_u0_diff_6' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_6' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_6' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_6' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_6' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_6' dev/gauss = 'pshort_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.651+pshort_rf_base_m2_b_nfactor_diff_6' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.0066 |
| +cdscb = 0 |
| +cdscd = 0.0039 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.298 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5309 |
| +pdiblc1 = 0.248 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4188 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.07242 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.56212+pshort_rf_base_m2_b_kt1_diff_6' |
| +kt2 = -0.122 |
| +at = 2.705e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 5.223e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '7.4e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.505e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '1.3e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps5p18m2x1_sim.pm ps5xp18m2x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 17:41:37 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps5xp18m2x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps5p18m2x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.7 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.021+pshort_rf_base_m2_b_vth0_diff_7' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_7' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.84e+04+pshort_rf_base_m2_b_vsat_diff_7' |
| +ua = '-2.321e-09+pshort_rf_base_m2_b_ua_diff_7' |
| +ub = '1.953e-18+pshort_rf_base_m2_b_ub_diff_7' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_7' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.0037+pshort_rf_base_m2_b_u0_diff_7' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_7' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_7' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_7' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_7' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3074+pshort_rf_base_m2_b_voff_diff_7' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_7' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.0046 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.2663 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.4186 |
| +pdiblc1 = 0 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.627 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.05346 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.56212+pshort_rf_base_m2_b_kt1_diff_7' |
| +kt2 = -0.122 |
| +at = 3.472e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 5.223e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.3e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.505e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '1.4e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps5p25m2x1_sim.pm ps5xp25m2x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 18:09:50 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps5xp25m2x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps5p25m2x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m2_b.8 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.977+pshort_rf_base_m2_b_vth0_diff_8' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m2_b_k2_diff_8' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.708e+04+pshort_rf_base_m2_b_vsat_diff_8' |
| +ua = '-2.21e-09+pshort_rf_base_m2_b_ua_diff_8' |
| +ub = '1.824e-18+pshort_rf_base_m2_b_ub_diff_8' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m2_b_rdsw_diff_8' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00375+pshort_rf_base_m2_b_u0_diff_8' |
| +a0 = '0.8909+pshort_rf_base_m2_b_a0_diff_8' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m2_b_ags_diff_8' |
| +b0 = '0+pshort_rf_base_m2_b_b0_diff_8' |
| +b1 = '0+pshort_rf_base_m2_b_b1_diff_8' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m2_b_voff_diff_8' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m2_b_nfactor_diff_8' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.298 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5899 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.5264 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.0457 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5162+pshort_rf_base_m2_b_kt1_diff_8' |
| +kt2 = -0.122 |
| +at = 4.321e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 5.223e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9.9e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.505e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '1e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m4.rf pmos -p -npshort_rf_base pshort_rf_base_m4_b.pm pshort_rf_base_m4_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined |
| * Time: Mon May 12 16:38:38 2008 |
| * Rule File: pmos_bsim4_RF_m4.rf |
| * Output File: pshort_rf_base_m4_b_bsimtranout.pm |
| * Input Files: |
| * (1) pshort_rf_base_m4_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m4_b.0 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.044+pshort_rf_base_m4_b_vth0_diff_0' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_0' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.908e+04+pshort_rf_base_m4_b_vsat_diff_0' |
| +ua = '-2.368e-09+pshort_rf_base_m4_b_ua_diff_0' |
| +ub = '1.997e-18+pshort_rf_base_m4_b_ub_diff_0' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_0' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00329+pshort_rf_base_m4_b_u0_diff_0' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_0' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_0' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_0' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.345+pshort_rf_base_m4_b_voff_diff_0' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.36+pshort_rf_base_m4_b_nfactor_diff_0' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.00043 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1799 |
| +etab = -0.07835 |
| +dsub = 0.2663 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5085 |
| +pdiblc1 = 0.12 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.379 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.05667 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5+pshort_rf_base_m4_b_kt1_diff_0' |
| +kt2 = -0.122 |
| +at = 3.02e+04 |
| +ute = -0.036 |
| +ua1 = 1.992e-10 |
| +ub1 = 4.398e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1600*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '8.2e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 2e-12 |
| +cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.455e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0015*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF.rf pmos -p -npshort_rf_base ps1p65p18m4x2_sim.pm ps1p65xp18m4x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/pshort/combined/beta1 |
| * Time: Wed Dec 12 17:05:19 2007 |
| * Rule File: pmos_bsim4_RF.rf |
| * Output File: ps1p65xp18m4x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) ps1p65p18m4x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m4_b.1 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 25e6 |
| +tnoib = 0.0e-6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.005+pshort_rf_base_m4_b_vth0_diff_1' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_1' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.808e+04+pshort_rf_base_m4_b_vsat_diff_1' |
| +ua = '-2.325e-09+pshort_rf_base_m4_b_ua_diff_1' |
| +ub = '1.939e-18+pshort_rf_base_m4_b_ub_diff_1' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_1' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.003126+pshort_rf_base_m4_b_u0_diff_1' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_1' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_1' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_1' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3248+pshort_rf_base_m4_b_voff_diff_1' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m4_b_nfactor_diff_1' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1799 |
| +etab = -0.07835 |
| +dsub = 0.2663 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5085 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.5264 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.0457 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.570+pshort_rf_base_m4_b_kt1_diff_1' |
| +kt2 = -0.122 |
| +at = 2.796e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 4.398e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1600*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9.2e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.3632 |
| +jss = 2.1483e-05 |
| +jsws = 8.040000000000001e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 2e-12 |
| +cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.455e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '2.12e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0015*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3.2e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| .model pshort_rf_base_m4_b.2 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.62e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.955+pshort_rf_base_m4_b_vth0_diff_2' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_2' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.364e+04+pshort_rf_base_m4_b_vsat_diff_2' |
| +ua = '-2.199e-09+pshort_rf_base_m4_b_ua_diff_2' |
| +ub = '1.855e-18+pshort_rf_base_m4_b_ub_diff_2' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_2' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.003331+pshort_rf_base_m4_b_u0_diff_2' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_2' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_2' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_2' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3104+pshort_rf_base_m4_b_voff_diff_2' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.87+pshort_rf_base_m4_b_nfactor_diff_2' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1799 |
| +etab = -0.07835 |
| +dsub = 0.3036 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.4678 |
| +pdiblc1 = 0.1 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.7475 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.0521 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.556+pshort_rf_base_m4_b_kt1_diff_2' |
| +kt2 = -0.122 |
| +at = 3.598e+04 |
| +ute = -0.39 |
| +ua1 = 1.346e-10 |
| +ub1 = 4.516e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1600*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 2e-12 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.3e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.7e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '-4e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.002*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.0862 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '2.8e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran pmos_bsim4_RF_m4.rf pmos -p -npshort_rf_base ps3p15m4x1_iccap_ovr.pm ps3p15m4x1_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/pshort/combined |
| * Time: Mon Apr 14 11:45:57 2008 |
| * Rule File: pmos_bsim4_RF_m4.rf |
| * Output File: ps3p15m4x1_bsimtranout.pm |
| * Input Files: |
| * (1) ps3p15m4x1_iccap_ovr.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 PMOS Model |
| |
| .model pshort_rf_base_m4_b.3 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.05+pshort_rf_base_m4_b_vth0_diff_3' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_3' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.1e+04+pshort_rf_base_m4_b_vsat_diff_3' |
| +ua = '-2.307e-09+pshort_rf_base_m4_b_ua_diff_3' |
| +ub = '1.975e-18+pshort_rf_base_m4_b_ub_diff_3' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_3' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00431+pshort_rf_base_m4_b_u0_diff_3' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_3' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_3' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_3' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_3' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3297+pshort_rf_base_m4_b_voff_diff_3' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m4_b_nfactor_diff_3' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.006804 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1612 |
| +etab = -0.07835 |
| +dsub = 0.279 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.3382 |
| +pdiblc1 = 0.2448 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4366 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.1 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5515+pshort_rf_base_m4_b_kt1_diff_3' |
| +kt2 = -0.122 |
| +at = 2.299e+04 |
| +ute = -0.1436 |
| +ua1 = 3.138e-10 |
| +ub1 = 4.531e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '800*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.2e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.1e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.055e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '6e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.8 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '2.4e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| .model pshort_rf_base_m4_b.4 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.021+pshort_rf_base_m4_b_vth0_diff_4' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_4' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.912e+04+pshort_rf_base_m4_b_vsat_diff_4' |
| +ua = '-2.219e-09+pshort_rf_base_m4_b_ua_diff_4' |
| +ub = '1.915e-18+pshort_rf_base_m4_b_ub_diff_4' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_4' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.004419+pshort_rf_base_m4_b_u0_diff_4' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_4' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_4' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_4' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_4' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_4' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.242+pshort_rf_base_m4_b_nfactor_diff_4' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.006804 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.279 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.2949 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4851 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.1 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5203+pshort_rf_base_m4_b_kt1_diff_4' |
| +kt2 = -0.122 |
| +at = 1.916e+04 |
| +ute = -0.189 |
| +ua1 = 1.346e-10 |
| +ub1 = 9.851e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '800*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.7e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.3e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.8 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| .model pshort_rf_base_m4_b.5 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.983+pshort_rf_base_m4_b_vth0_diff_5' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_5' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.743e+04+pshort_rf_base_m4_b_vsat_diff_5' |
| +ua = '-2.187e-09+pshort_rf_base_m4_b_ua_diff_5' |
| +ub = '1.852e-18+pshort_rf_base_m4_b_ub_diff_5' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_5' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00365+pshort_rf_base_m4_b_u0_diff_5' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_5' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_5' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_5' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_5' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_5' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.531+pshort_rf_base_m4_b_nfactor_diff_5' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.0063 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.31 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5899 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.5053 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.03747 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5203+pshort_rf_base_m4_b_kt1_diff_5' |
| +kt2 = -0.122 |
| +at = 1.916e+04 |
| +ute = -0.189 |
| +ua1 = 1.346e-10 |
| +ub1 = 9.851e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '800*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.05e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.155e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '7e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.002*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '2.6e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| .model pshort_rf_base_m4_b.6 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.079+pshort_rf_base_m4_b_vth0_diff_6' dev/gauss = 'pshort_rf_b_vth0_slope2/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_6' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.7e+04+pshort_rf_base_m4_b_vsat_diff_6' |
| +ua = '-2.311e-09+pshort_rf_base_m4_b_ua_diff_6' |
| +ub = '1.948e-18+pshort_rf_base_m4_b_ub_diff_6' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_6' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.004327+pshort_rf_base_m4_b_u0_diff_6' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_6' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_6' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_6' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_6' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_6' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.103+pshort_rf_base_m4_b_nfactor_diff_6' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.0066 |
| +cdscb = 0 |
| +cdscd = 0.0039 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.298 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5309 |
| +pdiblc1 = 0.248 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.4188 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.07242 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5621+pshort_rf_base_m4_b_kt1_diff_6' |
| +kt2 = -0.122 |
| +at = 2.705e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 5.223e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '7.4e-07+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.52e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '1.3e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '3e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| .model pshort_rf_base_m4_b.7 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-1.026+pshort_rf_base_m4_b_vth0_diff_7' dev/gauss = 'pshort_rf_b_vth0_slope3/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_7' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '7.213e+04+pshort_rf_base_m4_b_vsat_diff_7' |
| +ua = '-2.328e-09+pshort_rf_base_m4_b_ua_diff_7' |
| +ub = '1.953e-18+pshort_rf_base_m4_b_ub_diff_7' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_7' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.0037+pshort_rf_base_m4_b_u0_diff_7' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_7' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_7' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_7' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_7' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3074+pshort_rf_base_m4_b_voff_diff_7' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '6.012+pshort_rf_base_m4_b_nfactor_diff_7' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0.0046 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.2663 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.4186 |
| +pdiblc1 = 0 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.627 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.05346 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5621+pshort_rf_base_m4_b_kt1_diff_7' |
| +kt2 = -0.122 |
| +at = 3.472e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 5.223e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '0.85e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.5e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1.105e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.72e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '1.4e-08+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0017*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '2.7e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |
| .model pshort_rf_base_m4_b.8 pmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.23e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.399e-08+pshort_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '7.304e-09+pshort_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -5.722e-09 |
| +dwb = -1.786e-08 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -2.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.69 |
| +rnoib = 0.34 |
| +tnoia = 2.5e+07 |
| +tnoib = 0 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.23e-09*pshort_rf_base_b_toxe_mult' dev/gauss = '4.23e-09*pshort_rf_base_b_toxe_mult*(pshort_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+pshort_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '-0.9895+pshort_rf_base_m4_b_vth0_diff_8' dev/gauss = 'pshort_rf_b_vth0_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 1.038 |
| +k2 = '-0.1734+pshort_rf_base_m4_b_k2_diff_8' |
| +k3 = -15.85 |
| +dvt0 = 4.585 |
| +dvt1 = 0.294 |
| +dvt2 = 0.015 |
| +dvt0w = -4.977 |
| +dvt1w = 1.147e+06 |
| +dvt2w = -0.00896 |
| +w0 = 0 |
| +k3b = 2 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 0 |
| +lpeb = 0 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '6.488e+04+pshort_rf_base_m4_b_vsat_diff_8' |
| +ua = '-2.21e-09+pshort_rf_base_m4_b_ua_diff_8' |
| +ub = '1.851e-18+pshort_rf_base_m4_b_ub_diff_8' |
| +uc = 2.523e-13 |
| +rdsw = '547.9+pshort_rf_base_m4_b_rdsw_diff_8' |
| +prwb = -0.3235 |
| +prwg = 0.1376 |
| +wr = 1 |
| +u0 = '0.00375+pshort_rf_base_m4_b_u0_diff_8' |
| +a0 = '0.8909+pshort_rf_base_m4_b_a0_diff_8' |
| +keta = 0.0239 |
| +a1 = 0 |
| +a2 = 0.6419 |
| +ags = '1.25+pshort_rf_base_m4_b_ags_diff_8' |
| +b0 = '0+pshort_rf_base_m4_b_b0_diff_8' |
| +b1 = '0+pshort_rf_base_m4_b_b1_diff_8' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 547.9 |
| +rdwmin = 0 |
| +rsw = 547.9 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.3364+pshort_rf_base_m4_b_voff_diff_8' dev/gauss = 'pshort_rf_b_voff_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '5.892+pshort_rf_base_m4_b_nfactor_diff_8' dev/gauss = 'pshort_rf_b_nfactor_slope1/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.1874 |
| +etab = -0.07835 |
| +dsub = 0.298 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 0 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = 0.5899 |
| +pdiblc1 = 4.4e-11 |
| +pdiblc2 = 0 |
| +pdiblcb = -0.0001934 |
| +drout = 0.5264 |
| +pscbe1 = 5.12e+08 |
| +pscbe2 = 9.477e-08 |
| +pvag = 0 |
| +delta = 0.0457 |
| +alpha0 = 1e-10 |
| +alpha1 = 1e-10 |
| +beta0 = 8.581 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 3.016e-10 |
| +bgidl = 1e+09 |
| +cgidl = 300 |
| +egidl = 0.1 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 0.43 |
| +bigbacc = 0.054 |
| +cigbacc = 0.075 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.23e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.5162+pshort_rf_base_m4_b_kt1_diff_8' |
| +kt2 = -0.122 |
| +at = 3.889e+04 |
| +ute = -0.3 |
| +ua1 = 1.346e-10 |
| +ub1 = 5.223e-19 |
| +uc1 = 6.005e-13 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*pshort_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 1.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.0 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+pshort_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.363 |
| +jss = 2.148e-05 |
| +jsws = 8.04e-10 |
| +xtis = 5.2 |
| +bvs = 12.69 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.002039 |
| +tpbsw = 0.001246 |
| +tpbswg = 0 |
| +tcj = 0.001241 |
| +tcjsw = 0.0003736 |
| +tcjswg = 0.001 |
| +cgdo = '1.3e-10*pshort_rf_base_b_overlap_mult' |
| +cgso = '1e-10*pshort_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.001e-11*pshort_rf_base_b_overlap_mult' |
| +cgdl = '1.32e-10*pshort_rf_base_b_overlap_mult' |
| +cf = 1.2e-11 |
| +clc = 0 |
| +cle = 0.6 |
| +dlc = '1e-09+pshort_rf_base_b_dlc_diff+pshort_rf_base_dlc_rotweak' |
| +dwc = '0+pshort_rf_base_b_dwc_diff' |
| +vfbcv = -0.1447 |
| +acde = 0.401 |
| +moin = 15 |
| +noff = 2.5 |
| +voffcv = 0.05 |
| +ngate = 1e+23 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.002*pshort_rf_base_b_ajunction_mult' |
| +mjs = 0.1362 |
| +pbs = 0.9587 |
| +cjsws = '9.88e-11*pshort_rf_base_b_pjunction_mult' |
| +mjsws = 0.92 |
| +pbsws = 0.94 |
| +cjswgs = '2.6e-10*pshort_rf_base_b_pjunction_mult' |
| +mjswgs = 0.12 |
| +pbswgs = 1.4 |
| ****** |
| |