| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran diode.rf diode -p -npdiode_hvt PhDIV1.mod phighvt_cv.pmd pdiode_hvt.pmd |
| * Working Directory: /home/hai/models/s8/s8tee/models.3.1/phighvt/combined |
| * Time: Wed Feb 28 12:25:48 2007 |
| * Rule File: diode.rf |
| * Output File: pdiode_hvt.pmd |
| * Input Files: |
| * (1) PhDIV1.mod |
| * (2) phighvt_cv.pmd |
| *copyright, Cypress Semiconductor, 2001 |
| *BSIM3.V3 Diode Model |
| |
| .model pdiode_hvt d |
| +level = 3 |
| * |
| *PARAMETERS TO MAKE MODEL INTO CADFLOW |
| * |
| +tlevc = 1 |
| +scalm = 1e-6 |
| +area = 1e12 |
| * |
| *JUNCTION CAPACITANCE PARAMETERS |
| * |
| +cj = '0.00075561*1e-12*phighvt_ajunction_mult' $ farads/m^2 |
| +mj = 0.34629 |
| +pb = 0.6587 $ V |
| +cjsw = '9.2435e-011*1e-6*phighvt_pjunction_mult' $ farads/m |
| +mjsw = 0.26859 |
| +php = 0.7418 $ V |
| +cta = 0.0012407 $ 1/C |
| +ctp = 0 $ 1/C |
| +tpb = 0.0019551 $ V/C |
| +tphp = 0.00014242 $ V/C |
| * |
| *DIODE IV PARAMETERS |
| * |
| +js = 2.17e-017 $ A/m^2 |
| +jsw = 8.2e-016 $ A/m |
| +n = 1.2556 |
| +rs = 600 $ ohms (ohms/m^2 if area defined in netlist) |
| +ik = '4.76e-008/1e-12' $ A/m^2 |
| +ikr = '0/1e-12' $ A/m^2 |
| +vb = 12.8 $ V |
| +ibv = 0.00106 $ A |
| +trs = 0 $ 1/C |
| +eg = 1.05 $ eV |
| +xti = 2.0 |
| +tref = 30 $ C |
| * |
| *DEFAULT PARAMETERS |
| * |
| +tcv = 0 $ 1/C |
| +gap1 = 0.000473 $ eV/C |
| +gap2 = 1110 |
| +ttt1 = 0 $ 1/C |
| +ttt2 = 0 $ 1/C^2 |
| +tm1 = 0 $ 1/C |
| +tm2 = 0 $ 1/C^2 |
| +lm = 0 $ m |
| +lp = 0 $ m |
| +wm = 0 $ m |
| +wp = 0 $ m |
| +xm = 0 $ m |
| +xoi = 10000 |
| +xom = 10000 $ Angstrom |
| +xp = 0 $ m |
| +xw = 0 $ m |
| |
