| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran nmos_bsim4.rf nmos -p -nnshortesd nshortesd_modelnamechanged.pm3 nshort_ov.pm ndiode_m31_iv.pm ndiode_m31_cv.pm nshortesd_bsimtranoutput.pm3 |
| * Working Directory: /home/hai/models/s8/s8tee/models.3.1/nshortesd/combined |
| * Time: Fri Jun 1 12:21:16 2007 |
| * Rule File: nmos_bsim4.rf |
| * Output File: nshortesd_bsimtranoutput.pm3 |
| * Input Files: |
| * (1) nshortesd_modelnamechanged.pm3 |
| * (2) nshort_ov.pm |
| * (3) ndiode_m31_iv.pm |
| * (4) ndiode_m31_cv.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nshortesd.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.6e-07 lmax = 1.7e-07 wmin = 2.0345e-05 wmax = 2.0355e-05 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.1482e-009 |
| +xj = 1.5e-007 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '1.2561e-008+nshortesd_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '1.1879846e-008+nshortesd_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 0 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 0 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -1.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 200000 |
| +lc = 5e-009 |
| +xn = 3 |
| +rnoia = 0.577 |
| +rnoib = 0.5164 |
| +tnoia = 1.5 |
| +tnoib = 3.5 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.1482e-009*nshortesd_toxe_mult' |
| +dtox = 0 |
| +ndep = 1.7e+017 |
| +nsd = 1e+020 |
| +rshg = 0.1 |
| **** |
| +rsh = '1*nshortesd_rshn_mult' |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.565+nshortesd_vth0_diff_0' |
| +k1 = 0.50824 |
| +k2 = '-0.036074+nshortesd_k2_diff_0' |
| +k3 = 0 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -3.58 |
| +dvt1w = 1670600 |
| +dvt2w = 0 |
| +w0 = 0 |
| +k3b = 0 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 8.8387e-008 |
| +lpeb = -7.1972e-008 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '163960+nshortesd_vsat_diff_0' |
| +ua = '-1.244e-009+nshortesd_ua_diff_0' |
| +ub = '1.6282e-018+nshortesd_ub_diff_0' |
| +uc = 1.9958e-011 |
| +rdsw = '174.5+nshortesd_rdsw_diff_0' |
| +prwb = -0.17995 |
| +prwg = 0.011 |
| +wr = 1 |
| +u0 = '0.028432+nshortesd_u0_diff_0' |
| +a0 = '1.5+nshortesd_a0_diff_0' |
| +keta = '0.0873+nshortesd_keta_diff_0' |
| +a1 = 0 |
| +a2 = 0.42385546 |
| +ags = '0.4092+nshortesd_ags_diff_0' |
| +b0 = '0+nshortesd_b0_diff_0' |
| +b1 = '0+nshortesd_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 0 |
| +rdwmin = 0 |
| +rsw = 0 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1848+nshortesd_voff_diff_0' |
| +nfactor = '2+nshortesd_nfactor_diff_0' |
| +up = 0.0 |
| +ud = 0.0 |
| +lp = 1.0 |
| +tvfbsdoff = 0.0 |
| +tvoff = '0+nshortesd_tvoff_diff_0' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = '0+nshortesd_eta0_diff_0' |
| +etab = 0.001 |
| +dsub = 0.1 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.8197729e-009 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.17122+nshortesd_pclm_diff_0' |
| +pdiblc1 = 0.10049528 |
| +pdiblc2 = 0.020103 |
| +pdiblcb = -1 |
| +drout = 0.48621 |
| +pscbe1 = 3.6928e+008 |
| +pscbe2 = 2.2e-006 |
| +pvag = 0 |
| +delta = 0.01184 |
| +alpha0 = 1.414e-006 |
| +alpha1 = 1.4744 |
| +beta0 = 17.6 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = '3.041136e-013+nshortesd_pdits_diff_0' |
| +pditsl = 0 |
| +pditsd = '0+nshortesd_pditsd_diff_0' |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+009 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.1482e-009 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.29744+nshortesd_kt1_diff_0' |
| +kt2 = -0.019143 |
| +at = 79266 |
| +ute = -1.6806 |
| +ua1 = 5.504e-010 |
| +ub1 = 2.7351e-019 |
| +uc1 = 1.6706e-010 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 12 |
| +xrcrg2 = 1 |
| +rbpb = 50 |
| +rbpd = 50 |
| +rbps = 50 |
| +rbdb = 50 |
| +rbsb = 50 |
| +gbmin = 1e-012 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1000000E+07 |
| +af = 1 |
| +ef = 0.84 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgl = 0 |
| +ngcon = 1 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.2928 |
| +jss = 0.0027500000000000003 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.7 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.0012287 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-005 |
| +tcjswg = 0 |
| +cgdo = '3.2e-010*nshortesd_overlap_mult' |
| +cgso = '3.2e-010*nshortesd_overlap_mult' |
| +cgbo = 1e-013 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '0*nshortesd_overlap_mult' |
| +cgdl = '0*nshortesd_overlap_mult' |
| +cf = 1.4067e-012 |
| +clc = 1e-007 |
| +cle = 0.6 |
| +dlc = '1.8739e-008+nshortesd_dlc_diff+nshortesd_dlc_rotweak' |
| +dwc = '0+nshortesd_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4 |
| +moin = 6.9 |
| +noff = 3.621 |
| +voffcv = -0.1372 |
| +ngate = 1e+023 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0013459*nshortesd_ajunction_mult' |
| +mjs = 0.44 |
| +pbs = 0.729 |
| +cjsws = '3.6001e-011*nshortesd_pjunction_mult' |
| +mjsws = 0.0009 |
| +pbsws = 0.2 |
| +cjswgs = '2.3347e-010*nshortesd_pjunction_mult' |
| +mjswgs = 0.8000 |
| +pbswgs = 0.95578 |
| ****** |
| |
| .model nshortesd.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.6e-07 lmax = 1.7e-07 wmin = 4.0305e-05 wmax = 4.0315e-05 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.1482e-009 |
| +xj = 1.5e-007 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '1.2561e-008+nshortesd_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '1.1879846e-008+nshortesd_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 0 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 0 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -1.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 200000 |
| +lc = 5e-009 |
| +xn = 3 |
| +rnoia = 0.577 |
| +rnoib = 0.5164 |
| +tnoia = 1.5 |
| +tnoib = 3.5 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.1482e-009*nshortesd_toxe_mult' |
| +dtox = 0 |
| +ndep = 1.7e+017 |
| +nsd = 1e+020 |
| +rshg = 0.1 |
| **** |
| +rsh = '1*nshortesd_rshn_mult' |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.574+nshortesd_vth0_diff_1' |
| +k1 = 0.47947 |
| +k2 = '-0.0071285+nshortesd_k2_diff_1' |
| +k3 = 0 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -3.58 |
| +dvt1w = 1670600 |
| +dvt2w = 0 |
| +w0 = 0 |
| +k3b = 0 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 8.8387e-008 |
| +lpeb = -7.1972e-008 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '162130+nshortesd_vsat_diff_1' |
| +ua = '-1.3196e-009+nshortesd_ua_diff_1' |
| +ub = '1.5781e-018+nshortesd_ub_diff_1' |
| +uc = 1.9293e-011 |
| +rdsw = '174.5+nshortesd_rdsw_diff_1' |
| +prwb = -0.17995 |
| +prwg = 0.011 |
| +wr = 1 |
| +u0 = '0.028739+nshortesd_u0_diff_1' |
| +a0 = '1.5+nshortesd_a0_diff_1' |
| +keta = '0.072913+nshortesd_keta_diff_1' |
| +a1 = 0 |
| +a2 = 0.42385546 |
| +ags = '0.4092+nshortesd_ags_diff_1' |
| +b0 = '0+nshortesd_b0_diff_1' |
| +b1 = '0+nshortesd_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 0 |
| +rdwmin = 0 |
| +rsw = 0 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1936+nshortesd_voff_diff_1' |
| +nfactor = '2+nshortesd_nfactor_diff_1' |
| +up = 0.0 |
| +ud = 0.0 |
| +lp = 1.0 |
| +tvfbsdoff = 0.0 |
| +tvoff = '0+nshortesd_tvoff_diff_1' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = '0+nshortesd_eta0_diff_1' |
| +etab = 0.001 |
| +dsub = 0.1 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.8197729e-009 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.15544+nshortesd_pclm_diff_1' |
| +pdiblc1 = 0.10049528 |
| +pdiblc2 = 0.030979 |
| +pdiblcb = -1 |
| +drout = 0.57882 |
| +pscbe1 = 3.6928e+008 |
| +pscbe2 = 2.2e-006 |
| +pvag = 0 |
| +delta = 0.01376 |
| +alpha0 = 1.414e-006 |
| +alpha1 = 1.4744 |
| +beta0 = 17.6 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = '3.041136e-013+nshortesd_pdits_diff_1' |
| +pditsl = 0 |
| +pditsd = '0+nshortesd_pditsd_diff_1' |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+009 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.1482e-009 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.29351+nshortesd_kt1_diff_1' |
| +kt2 = -0.019143 |
| +at = 71264 |
| +ute = -1.6806 |
| +ua1 = 5.7242e-010 |
| +ub1 = 9.1861e-019 |
| +uc1 = 1.6038e-010 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 12 |
| +xrcrg2 = 1 |
| +rbpb = 50 |
| +rbpd = 50 |
| +rbps = 50 |
| +rbdb = 50 |
| +rbsb = 50 |
| +gbmin = 1e-012 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1000000E+07 |
| +af = 1 |
| +ef = 0.84 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgl = 0 |
| +ngcon = 1 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.2928 |
| +jss = 0.0027500000000000003 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.7 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.0012287 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-005 |
| +tcjswg = 0 |
| +cgdo = '3.2e-010*nshortesd_overlap_mult' |
| +cgso = '3.2e-010*nshortesd_overlap_mult' |
| +cgbo = 1e-013 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '0*nshortesd_overlap_mult' |
| +cgdl = '0*nshortesd_overlap_mult' |
| +cf = 1.4067e-012 |
| +clc = 1e-007 |
| +cle = 0.6 |
| +dlc = '1.8739e-008+nshortesd_dlc_diff+nshortesd_dlc_rotweak' |
| +dwc = '0+nshortesd_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4 |
| +moin = 6.9 |
| +noff = 3.621 |
| +voffcv = -0.1372 |
| +ngate = 1e+023 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0013459*nshortesd_ajunction_mult' |
| +mjs = 0.44 |
| +pbs = 0.729 |
| +cjsws = '3.6001e-011*nshortesd_pjunction_mult' |
| +mjsws = 0.0009 |
| +pbsws = 0.2 |
| +cjswgs = '2.3347e-010*nshortesd_pjunction_mult' |
| +mjswgs = 0.8000 |
| +pbswgs = 0.95578 |
| ****** |
| |
| .model nshortesd.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.395e-06 wmax = 5.405e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.1482e-009 |
| +xj = 1.5e-007 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '1.2561e-008+nshortesd_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '1.1879846e-008+nshortesd_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 0 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 0 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -1.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 200000 |
| +lc = 5e-009 |
| +xn = 3 |
| +rnoia = 0.577 |
| +rnoib = 0.5164 |
| +tnoia = 1.5 |
| +tnoib = 3.5 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.1482e-009*nshortesd_toxe_mult' |
| +dtox = 0 |
| +ndep = 1.7e+017 |
| +nsd = 1e+020 |
| +rshg = 0.1 |
| **** |
| +rsh = '1*nshortesd_rshn_mult' |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.59966+nshortesd_vth0_diff_2' |
| +k1 = 0.47947 |
| +k2 = '-0.008+nshortesd_k2_diff_2' |
| +k3 = 0 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -3.58 |
| +dvt1w = 1670600 |
| +dvt2w = 0 |
| +w0 = 0 |
| +k3b = 0 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 8.8387e-008 |
| +lpeb = -7.1972e-008 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '140380+nshortesd_vsat_diff_2' |
| +ua = '-1.1107e-009+nshortesd_ua_diff_2' |
| +ub = '1.6158e-018+nshortesd_ub_diff_2' |
| +uc = 3.08e-011 |
| +rdsw = '174.5+nshortesd_rdsw_diff_2' |
| +prwb = -0.17995 |
| +prwg = 0.011 |
| +wr = 1 |
| +u0 = '0.029546+nshortesd_u0_diff_2' |
| +a0 = '1.5+nshortesd_a0_diff_2' |
| +keta = '0.0873+nshortesd_keta_diff_2' |
| +a1 = 0 |
| +a2 = 0.42385546 |
| +ags = '0.4092+nshortesd_ags_diff_2' |
| +b0 = '0+nshortesd_b0_diff_2' |
| +b1 = '0+nshortesd_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 0 |
| +rdwmin = 0 |
| +rsw = 0 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1936+nshortesd_voff_diff_2' |
| +nfactor = '2+nshortesd_nfactor_diff_2' |
| +up = 0.0 |
| +ud = 0.0 |
| +lp = 1.0 |
| +tvfbsdoff = 0.0 |
| +tvoff = '0+nshortesd_tvoff_diff_2' |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = '0.00078661337+nshortesd_eta0_diff_2' |
| +etab = -0.0029133829 |
| +dsub = 0.1 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.8197729e-009 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.33234+nshortesd_pclm_diff_2' |
| +pdiblc1 = 0.10049528 |
| +pdiblc2 = 0.015545 |
| +pdiblcb = -1 |
| +drout = 0.87701 |
| +pscbe1 = 3.6928e+008 |
| +pscbe2 = 2e-006 |
| +pvag = 0 |
| +delta = 0.008 |
| +alpha0 = 1.414e-006 |
| +alpha1 = 1.4744 |
| +beta0 = 17.6 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = '3.041136e-013+nshortesd_pdits_diff_2' |
| +pditsl = 0 |
| +pditsd = '0+nshortesd_pditsd_diff_2' |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+009 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.1482e-009 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.33011+nshortesd_kt1_diff_2' |
| +kt2 = -0.019143 |
| +at = 77739 |
| +ute = -1.6806 |
| +ua1 = 5.504e-010 |
| +ub1 = 4.8841e-019 |
| +uc1 = 1.6706e-010 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 12 |
| +xrcrg2 = 1 |
| +rbpb = 50 |
| +rbpd = 50 |
| +rbps = 50 |
| +rbdb = 50 |
| +rbsb = 50 |
| +gbmin = 1e-012 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.5e+42 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1000000E+07 |
| +af = 1 |
| +ef = 0.84 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgl = 0 |
| +ngcon = 1 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.2928 |
| +jss = 0.0027500000000000003 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.7 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.0012287 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-005 |
| +tcjswg = 0 |
| +cgdo = '3.2e-010*nshortesd_overlap_mult' |
| +cgso = '3.2e-010*nshortesd_overlap_mult' |
| +cgbo = 1e-013 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '0*nshortesd_overlap_mult' |
| +cgdl = '0*nshortesd_overlap_mult' |
| +cf = 1.4067e-012 |
| +clc = 1e-007 |
| +cle = 0.6 |
| +dlc = '1.8739e-008+nshortesd_dlc_diff+nshortesd_dlc_rotweak' |
| +dwc = '0+nshortesd_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4 |
| +moin = 6.9 |
| +noff = 3.621 |
| +voffcv = -0.1372 |
| +ngate = 1e+023 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0013459*nshortesd_ajunction_mult' |
| +mjs = 0.44 |
| +pbs = 0.729 |
| +cjsws = '3.6001e-011*nshortesd_pjunction_mult' |
| +mjsws = 0.0009 |
| +pbsws = 0.2 |
| +cjswgs = '2.3347e-010*nshortesd_pjunction_mult' |
| +mjswgs = 0.8000 |
| +pbswgs = 0.95578 |
| ****** |
| |
