| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl1p65p15m2x4_sim.pm nl1p65p15m2x4_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:17:36 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl1p65p15m2x4_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl1p65p15m2x4_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.14e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.498+nlowvt_rf_base_m2_b_vth0_diff_0' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_0' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.64e+05+nlowvt_rf_base_m2_b_vsat_diff_0' |
| +ua = '-2.21e-09+nlowvt_rf_base_m2_b_ua_diff_0' |
| +ub = '2.525e-18+nlowvt_rf_base_m2_b_ub_diff_0' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_0' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03+nlowvt_rf_base_m2_b_u0_diff_0' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_0' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_0' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_0' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2166+nlowvt_rf_base_m2_b_voff_diff_0' |
| +nfactor = '2.991+nlowvt_rf_base_m2_b_nfactor_diff_0' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.3604 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.2056+nlowvt_rf_base_m2_b_pclm_diff_0' |
| +pdiblc1 = 0.238 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.4074 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03842 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2709+nlowvt_rf_base_m2_b_kt1_diff_0' |
| +kt2 = -0.02437 |
| +at = 7.8725e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '900*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '8.2e-07+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.389e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '4e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '1.4e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '7e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1 |
| +dlc = '2.3e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.00255*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9977 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '4.213e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl1p65p18m2x4_sim.pm nl1p65p18m2x4_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:19:09 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl1p65p18m2x4_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl1p65p18m2x4_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.011e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.502+nlowvt_rf_base_m2_b_vth0_diff_1' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_1' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.54e+05+nlowvt_rf_base_m2_b_vsat_diff_1' |
| +ua = '-1.786e-09+nlowvt_rf_base_m2_b_ua_diff_1' |
| +ub = '2.173e-18+nlowvt_rf_base_m2_b_ub_diff_1' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_1' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03224+nlowvt_rf_base_m2_b_u0_diff_1' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_1' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_1' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_1' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2036+nlowvt_rf_base_m2_b_voff_diff_1' |
| +nfactor = '2.685+nlowvt_rf_base_m2_b_nfactor_diff_1' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 1e-10 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.227+nlowvt_rf_base_m2_b_pclm_diff_1' |
| +pdiblc1 = 0.2584 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.39 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03138 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2709+nlowvt_rf_base_m2_b_kt1_diff_1' |
| +kt2 = -0.02437 |
| +at = 6.700e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '900*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.26e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.389e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.95e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '8.5e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.5e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.8 |
| +voffcv = -0.07 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.5 |
| +cjswgs = '2.813e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl1p65p25m2x4_sim.pm nl1p65p25m2x4_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:19:25 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl1p65p25m2x4_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl1p65p25m2x4_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.14e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.498+nlowvt_rf_base_m2_b_vth0_diff_2' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_2' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.56e+05+nlowvt_rf_base_m2_b_vsat_diff_2' |
| +ua = '-1.901e-09+nlowvt_rf_base_m2_b_ua_diff_2' |
| +ub = '2.515e-18+nlowvt_rf_base_m2_b_ub_diff_2' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_2' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03+nlowvt_rf_base_m2_b_u0_diff_2' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_2' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_2' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_2' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1949+nlowvt_rf_base_m2_b_voff_diff_2' |
| +nfactor = '2.991+nlowvt_rf_base_m2_b_nfactor_diff_2' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.3604 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.204+nlowvt_rf_base_m2_b_pclm_diff_2' |
| +pdiblc1 = 0.238 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.4074 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03842 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3000+nlowvt_rf_base_m2_b_kt1_diff_2' |
| +kt2 = -0.02437 |
| +at = 6.1806e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.14e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '900*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.33e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000992 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.859e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '4.35e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '2e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.2e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1.2 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0025*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.222 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.913e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.1 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl3p15m2x2_sim.pm nl3p15m2x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:20:07 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl3p15m2x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl3p15m2x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.3 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '0+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4788+nlowvt_rf_base_m2_b_vth0_diff_3' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_3' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.56e+05+nlowvt_rf_base_m2_b_vsat_diff_3' |
| +ua = '-1.984e-09+nlowvt_rf_base_m2_b_ua_diff_3' |
| +ub = '2.376e-18+nlowvt_rf_base_m2_b_ub_diff_3' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_3' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03224+nlowvt_rf_base_m2_b_u0_diff_3' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_3' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_3' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_3' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_3' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2256+nlowvt_rf_base_m2_b_voff_diff_3' |
| +nfactor = '2.991+nlowvt_rf_base_m2_b_nfactor_diff_3' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.2183+nlowvt_rf_base_m2_b_pclm_diff_3' |
| +pdiblc1 = 0.238 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03202 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2507+nlowvt_rf_base_m2_b_kt1_diff_3' |
| +kt2 = -0.02437 |
| +at = 7.705e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -6.0024e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '440*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '8.75e-07+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000992 |
| +tcjsw = 0 |
| +tcjswg = 0 |
| +cgdo = '3.289e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.2e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '1.9e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.513e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.5 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl3p18m2x2_sim.pm nl3p18m2x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:20:27 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl3p18m2x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl3p18m2x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.4 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-4e-09+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.502+nlowvt_rf_base_m2_b_vth0_diff_4' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_4' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.54e+05+nlowvt_rf_base_m2_b_vsat_diff_4' |
| +ua = '-1.984e-09+nlowvt_rf_base_m2_b_ua_diff_4' |
| +ub = '2.492e-18+nlowvt_rf_base_m2_b_ub_diff_4' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_4' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03224+nlowvt_rf_base_m2_b_u0_diff_4' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_4' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_4' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_4' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_4' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2166+nlowvt_rf_base_m2_b_voff_diff_4' |
| +nfactor = '1.974+nlowvt_rf_base_m2_b_nfactor_diff_4' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 1e-10 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.2183+nlowvt_rf_base_m2_b_pclm_diff_4' |
| +pdiblc1 = 0.219 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03138 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.25432+nlowvt_rf_base_m2_b_kt1_diff_4' |
| +kt2 = -0.02437 |
| +at = 6.432e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '440*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.35e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.389e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.8e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.5e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.9 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.5 |
| +cjswgs = '2.813e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl3p25m2x2_sim.pm nl3p25m2x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:26:58 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl3p25m2x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl3p25m2x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.5 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-4e-09+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.482+nlowvt_rf_base_m2_b_vth0_diff_5' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_5' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.611e+05+nlowvt_rf_base_m2_b_vsat_diff_5' |
| +ua = '-1.884e-09+nlowvt_rf_base_m2_b_ua_diff_5' |
| +ub = '2.432e-18+nlowvt_rf_base_m2_b_ub_diff_5' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_5' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.029+nlowvt_rf_base_m2_b_u0_diff_5' |
| +a0 = '1.883+nlowvt_rf_base_m2_b_a0_diff_5' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.4465+nlowvt_rf_base_m2_b_ags_diff_5' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_5' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_5' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2166+nlowvt_rf_base_m2_b_voff_diff_5' |
| +nfactor = '1.074+nlowvt_rf_base_m2_b_nfactor_diff_5' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 1e-10 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.3465 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1223+nlowvt_rf_base_m2_b_pclm_diff_5' |
| +pdiblc1 = 0.1445 |
| +pdiblc2 = 0.01136 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.02761 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2543+nlowvt_rf_base_m2_b_kt1_diff_5' |
| +kt2 = -0.02437 |
| +at = 6.432e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '440*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.35e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.389e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.8e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '9.4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.1e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.9 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.5 |
| +cjswgs = '2.813e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl5p15m2x1_sim.pm nl5p15m2x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:28:02 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl5p15m2x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl5p15m2x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.6 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-5.962e-09+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.477+nlowvt_rf_base_m2_b_vth0_diff_6' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_6' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.606e+05+nlowvt_rf_base_m2_b_vsat_diff_6' |
| +ua = '-1.944e-09+nlowvt_rf_base_m2_b_ua_diff_6' |
| +ub = '2.18e-18+nlowvt_rf_base_m2_b_ub_diff_6' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_6' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03354+nlowvt_rf_base_m2_b_u0_diff_6' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_6' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_6' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_6' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_6' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.23+nlowvt_rf_base_m2_b_voff_diff_6' |
| +nfactor = '2.931+nlowvt_rf_base_m2_b_nfactor_diff_6' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1907+nlowvt_rf_base_m2_b_pclm_diff_6' |
| +pdiblc1 = 0.2121 |
| +pdiblc2 = 0.02195 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.02453 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2507+nlowvt_rf_base_m2_b_kt1_diff_6' |
| +kt2 = -0.02437 |
| +at = 7.705e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -6.0024e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2.0 |
| +rbpb = '190*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.092e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.189e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.2e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '2e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.4e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0022*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.222 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.513e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.5 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl5p18m2x1_iccap.pm nl5p18m2x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta2 |
| * Time: Thu Jan 10 13:58:10 2008 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl5p18m2x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl5p18m2x1_iccap.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.7 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-4e-09+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e+07 |
| +tnoib = 9.9e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.489+nlowvt_rf_base_m2_b_vth0_diff_7' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_7' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.5e+05+nlowvt_rf_base_m2_b_vsat_diff_7' |
| +ua = '-1.984e-09+nlowvt_rf_base_m2_b_ua_diff_7' |
| +ub = '2.352e-18+nlowvt_rf_base_m2_b_ub_diff_7' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_7' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03124+nlowvt_rf_base_m2_b_u0_diff_7' |
| +a0 = '1.471+nlowvt_rf_base_m2_b_a0_diff_7' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m2_b_ags_diff_7' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_7' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_7' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2166+nlowvt_rf_base_m2_b_voff_diff_7' |
| +nfactor = '2.053+nlowvt_rf_base_m2_b_nfactor_diff_7' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 1e-10 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.227+nlowvt_rf_base_m2_b_pclm_diff_7' |
| +pdiblc1 = 0.2278 |
| +pdiblc2 = 0.005138 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03138 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2543+nlowvt_rf_base_m2_b_kt1_diff_7' |
| +kt2 = -0.02437 |
| +at = 6.432e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = 1.35e-06 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.289e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.6e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.7e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.9 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.5 |
| +cjswgs = '2.813e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl5p25m2x1_iccap.pm nl5p25m2x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta2 |
| * Time: Thu Jan 10 13:58:49 2008 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl5p25m2x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl5p25m2x1_iccap.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m2_b.8 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-4e-09+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e+07 |
| +tnoib = 9.9e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.474+nlowvt_rf_base_m2_b_vth0_diff_8' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m2_b_k2_diff_8' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.581e+05+nlowvt_rf_base_m2_b_vsat_diff_8' |
| +ua = '-1.874e-09+nlowvt_rf_base_m2_b_ua_diff_8' |
| +ub = '2.472e-18+nlowvt_rf_base_m2_b_ub_diff_8' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m2_b_rdsw_diff_8' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.0305+nlowvt_rf_base_m2_b_u0_diff_8' |
| +a0 = '1.883+nlowvt_rf_base_m2_b_a0_diff_8' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.4465+nlowvt_rf_base_m2_b_ags_diff_8' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m2_b_b0_diff_8' |
| +b1 = '1.902e-09+nlowvt_rf_base_m2_b_b1_diff_8' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2166+nlowvt_rf_base_m2_b_voff_diff_8' |
| +nfactor = '1.074+nlowvt_rf_base_m2_b_nfactor_diff_8' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 1e-10 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.3465 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1223+nlowvt_rf_base_m2_b_pclm_diff_8' |
| +pdiblc1 = 0.1445 |
| +pdiblc2 = 0.008634 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03258 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2543+nlowvt_rf_base_m2_b_kt1_diff_8' |
| +kt2 = -0.02437 |
| +at = 6.432e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = 1.35e-06 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.489e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.4e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '9.4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.7e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.9 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0014*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.5 |
| +cjswgs = '2.813e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl1p65p15m4x2_sim.pm nl1p65p15m4x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:29:12 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl1p65p15m4x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl1p65p15m4x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.14e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.972 |
| +rnoib = 0.20 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4908+nlowvt_rf_base_m4_b_vth0_diff_0' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_0' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.651e+05+nlowvt_rf_base_m4_b_vsat_diff_0' |
| +ua = '-2.21e-09+nlowvt_rf_base_m4_b_ua_diff_0' |
| +ub = '2.424e-18+nlowvt_rf_base_m4_b_ub_diff_0' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_0' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.0309+nlowvt_rf_base_m4_b_u0_diff_0' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_0' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_0' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_0' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2166+nlowvt_rf_base_m4_b_voff_diff_0' |
| +nfactor = '2.991+nlowvt_rf_base_m4_b_nfactor_diff_0' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.3604 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1603+nlowvt_rf_base_m4_b_pclm_diff_0' |
| +pdiblc1 = 0.238 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.4074 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03842 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2709+nlowvt_rf_base_m4_b_kt1_diff_0' |
| +kt2 = -0.02437 |
| +at = 7.873e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1800*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.16e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.299e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.9e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '6e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.18e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.513e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.5 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl1p65p18m4x2_sim.pm nl1p65p18m4x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:29:38 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl1p65p18m4x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl1p65p18m4x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.072e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.51+nlowvt_rf_base_m4_b_vth0_diff_1' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_1' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.448e+05+nlowvt_rf_base_m4_b_vsat_diff_1' |
| +ua = '-1.822e-09+nlowvt_rf_base_m4_b_ua_diff_1' |
| +ub = '2.193e-18+nlowvt_rf_base_m4_b_ub_diff_1' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_1' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03224+nlowvt_rf_base_m4_b_u0_diff_1' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_1' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_1' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_1' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2036+nlowvt_rf_base_m4_b_voff_diff_1' |
| +nfactor = '2.087+nlowvt_rf_base_m4_b_nfactor_diff_1' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 1e-10 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.3323+nlowvt_rf_base_m4_b_pclm_diff_1' |
| +pdiblc1 = 0.2584 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.39 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.0182 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2709+nlowvt_rf_base_m4_b_kt1_diff_1' |
| +kt2 = -0.02437 |
| +at = 6.7e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1800*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.689e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '4.15e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '8.5e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.5e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.8 |
| +voffcv = -0.07 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.5 |
| +cjswgs = '2.213e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl1p65p25m4x2_sim.pm nl1p65p25m4x2_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:29:54 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl1p65p25m4x2_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl1p65p25m4x2_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 1.645e-06 wmax = 1.655e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.14e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.852 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.499+nlowvt_rf_base_m4_b_vth0_diff_2' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_2' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.49e+05+nlowvt_rf_base_m4_b_vsat_diff_2' |
| +ua = '-1.871e-09+nlowvt_rf_base_m4_b_ua_diff_2' |
| +ub = '2.402e-18+nlowvt_rf_base_m4_b_ub_diff_2' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_2' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03+nlowvt_rf_base_m4_b_u0_diff_2' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_2' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_2' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_2' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1949+nlowvt_rf_base_m4_b_voff_diff_2' |
| +nfactor = '2+nlowvt_rf_base_m4_b_nfactor_diff_2' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.3604 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.204+nlowvt_rf_base_m4_b_pclm_diff_2' |
| +pdiblc1 = 0.2723 |
| +pdiblc2 = 0.003569 |
| +pdiblcb = -1 |
| +drout = 0.4074 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03842 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2709+nlowvt_rf_base_m4_b_kt1_diff_2' |
| +kt2 = -0.02437 |
| +at = 5.328e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1800*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.35e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '4.009e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '4.15e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '1.05e-10*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1e-11 |
| +cle = 1.9 |
| +dlc = '2.2e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 0.8 |
| +voffcv = -0.07 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.002*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.1 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl3p15m4x1_sim.pm nl3p15m4x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:30:28 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl3p15m4x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl3p15m4x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.3 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-4e-10+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4788+nlowvt_rf_base_m4_b_vth0_diff_3' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_3' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.556e+05+nlowvt_rf_base_m4_b_vsat_diff_3' |
| +ua = '-1.924e-09+nlowvt_rf_base_m4_b_ua_diff_3' |
| +ub = '2.336e-18+nlowvt_rf_base_m4_b_ub_diff_3' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_3' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03224+nlowvt_rf_base_m4_b_u0_diff_3' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_3' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_3' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_3' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_3' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2256+nlowvt_rf_base_m4_b_voff_diff_3' |
| +nfactor = '2.931+nlowvt_rf_base_m4_b_nfactor_diff_3' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.2239+nlowvt_rf_base_m4_b_pclm_diff_3' |
| +pdiblc1 = 0.238 |
| +pdiblc2 = 0.004705 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.02433 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2779+nlowvt_rf_base_m4_b_kt1_diff_3' |
| +kt2 = -0.02437 |
| +at = 7.203e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '880*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.35e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '2.809e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '2.8e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '5e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.7e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0025*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.513e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.5 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl3p18m4x1_sim.pm nl3p18m4x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:30:44 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl3p18m4x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl3p18m4x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.4 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.128e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4959+nlowvt_rf_base_m4_b_vth0_diff_4' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_4' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.56e+05+nlowvt_rf_base_m4_b_vsat_diff_4' |
| +ua = '-1.992e-09+nlowvt_rf_base_m4_b_ua_diff_4' |
| +ub = '2.361e-18+nlowvt_rf_base_m4_b_ub_diff_4' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_4' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03224+nlowvt_rf_base_m4_b_u0_diff_4' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_4' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_4' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_4' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_4' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1865+nlowvt_rf_base_m4_b_voff_diff_4' |
| +nfactor = '2.991+nlowvt_rf_base_m4_b_nfactor_diff_4' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1703+nlowvt_rf_base_m4_b_pclm_diff_4' |
| +pdiblc1 = 0.2047 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.3367 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03202 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2779+nlowvt_rf_base_m4_b_kt1_diff_4' |
| +kt2 = -0.02437 |
| +at = 7.203e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '880*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.35e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.189e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3.1e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '7.4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.8e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl3p25m4x1_iccap.pm nl3p25m4x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta2 |
| * Time: Thu Jan 10 14:02:06 2008 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl3p25m4x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl3p25m4x1_iccap.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.5 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.128e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.852 |
| +rnoib = 0.26 |
| +tnoia = 2.5e+07 |
| +tnoib = 9.9e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4921+nlowvt_rf_base_m4_b_vth0_diff_5' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_5' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.52e+05+nlowvt_rf_base_m4_b_vsat_diff_5' |
| +ua = '-1.972e-09+nlowvt_rf_base_m4_b_ua_diff_5' |
| +ub = '2.511e-18+nlowvt_rf_base_m4_b_ub_diff_5' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_5' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.02944+nlowvt_rf_base_m4_b_u0_diff_5' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_5' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_5' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_5' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_5' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1865+nlowvt_rf_base_m4_b_voff_diff_5' |
| +nfactor = '1.795+nlowvt_rf_base_m4_b_nfactor_diff_5' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1703+nlowvt_rf_base_m4_b_pclm_diff_5' |
| +pdiblc1 = 0.2047 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.3367 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03202 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2779+nlowvt_rf_base_m4_b_kt1_diff_5' |
| +kt2 = -0.02437 |
| +at = 7.203e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '880*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = 1.35e-06 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.659e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '2e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '7.4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.7e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = 0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0011*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '1.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl5p15m4x1_sim.pm nl5p15m4x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta1 |
| * Time: Tue Dec 11 18:31:17 2007 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl5p15m4x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl5p15m4x1_sim.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.6 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.45e-07 lmax = 1.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-3.312e-09+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e7 |
| +tnoib = 9.9e6 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4788+nlowvt_rf_base_m4_b_vth0_diff_6' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_6' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.646e+05+nlowvt_rf_base_m4_b_vsat_diff_6' |
| +ua = '-1.974e-09+nlowvt_rf_base_m4_b_ua_diff_6' |
| +ub = '2.469e-18+nlowvt_rf_base_m4_b_ub_diff_6' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_6' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03324+nlowvt_rf_base_m4_b_u0_diff_6' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_6' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_6' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_6' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_6' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2473+nlowvt_rf_base_m4_b_voff_diff_6' |
| +nfactor = '2.931+nlowvt_rf_base_m4_b_nfactor_diff_6' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1616+nlowvt_rf_base_m4_b_pclm_diff_6' |
| +pdiblc1 = 0.2525 |
| +pdiblc2 = 0.01568 |
| +pdiblcb = -1 |
| +drout = 0.4244 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.02725 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2779+nlowvt_rf_base_m4_b_kt1_diff_6' |
| +kt2 = -0.02437 |
| +at = 7.203e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '380*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.35e-06+nlowvt_rf_base_b_xgw_diff' |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.089e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '2.8e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '2e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.8e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0025*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.422 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.513e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.5 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl5p18m4x1_iccap.pm nl5p18m4x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta2 |
| * Time: Thu Jan 10 14:01:19 2008 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl5p18m4x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl5p18m4x1_iccap.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.7 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 1.75e-07 lmax = 1.85e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.128e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.912 |
| +rnoib = 0.26 |
| +tnoia = 2.5e+07 |
| +tnoib = 9.9e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4889+nlowvt_rf_base_m4_b_vth0_diff_7' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_7' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.56e+05+nlowvt_rf_base_m4_b_vsat_diff_7' |
| +ua = '-1.992e-09+nlowvt_rf_base_m4_b_ua_diff_7' |
| +ub = '2.511e-18+nlowvt_rf_base_m4_b_ub_diff_7' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_7' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.03344+nlowvt_rf_base_m4_b_u0_diff_7' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_7' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_7' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_7' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_7' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1865+nlowvt_rf_base_m4_b_voff_diff_7' |
| +nfactor = '1.795+nlowvt_rf_base_m4_b_nfactor_diff_7' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1703+nlowvt_rf_base_m4_b_pclm_diff_7' |
| +pdiblc1 = 0.2047 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.3367 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03202 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2779+nlowvt_rf_base_m4_b_kt1_diff_7' |
| +kt2 = -0.02437 |
| +at = 7.203e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = 1.35e-06 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.029e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '7.4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.8e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.0024*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3 |
| +pbswgs = 0.9964 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: hai |
| * Command Line: /proj/tlib/s8dia/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF.rf nmos -p -nnlowvt_rf_base nl5p25m4x1_iccap.pm nl5p25m4x1_bsimtranoutput.pm |
| * Working Directory: /home/hai/models/s8/s8dia/models.3.2/nlowvt/combined/beta2 |
| * Time: Thu Jan 10 14:00:44 2008 |
| * Rule File: nmos_bsim4_RF.rf |
| * Output File: nl5p25m4x1_bsimtranoutput.pm |
| * Input Files: |
| * (1) nl5p25m4x1_iccap.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| .model nlowvt_rf_base_m4_b.8 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 2.45e-07 lmax = 2.55e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 4.148e-09 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '-1.128e-08+nlowvt_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '9.181e-09+nlowvt_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = 0 |
| +dwb = 0 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = -3.0e-07 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 2e+05 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.852 |
| +rnoib = 0.26 |
| +tnoia = 2.5e+07 |
| +tnoib = 9.9e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '4.148e-09*nlowvt_rf_base_b_toxe_mult' dev/gauss = '4.148e-09*nlowvt_rf_base_b_toxe_mult*(nlowvt_rf_b_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 1.7e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nlowvt_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.4869+nlowvt_rf_base_m4_b_vth0_diff_8' dev/gauss = 'nlowvt_rf_b_vth0_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +k1 = 0.5415 |
| +k2 = '-0.07197+nlowvt_rf_base_m4_b_k2_diff_8' |
| +k3 = 3 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.032 |
| +dvt0w = -0.2864 |
| +dvt1w = 1.671e+06 |
| +dvt2w = -0.3571 |
| +w0 = 0 |
| +k3b = 1.48 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 1.342e-07 |
| +lpeb = -7.224e-08 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.51e+05+nlowvt_rf_base_m4_b_vsat_diff_8' |
| +ua = '-1.992e-09+nlowvt_rf_base_m4_b_ua_diff_8' |
| +ub = '2.621e-18+nlowvt_rf_base_m4_b_ub_diff_8' |
| +uc = 7.917e-11 |
| +rdsw = '98.95+nlowvt_rf_base_m4_b_rdsw_diff_8' |
| +prwb = 0.008 |
| +prwg = 0 |
| +wr = 1 |
| +u0 = '0.0307+nlowvt_rf_base_m4_b_u0_diff_8' |
| +a0 = '1.471+nlowvt_rf_base_m4_b_a0_diff_8' |
| +keta = 0.1378 |
| +a1 = 0 |
| +a2 = 0.4239 |
| +ags = '0.5074+nlowvt_rf_base_m4_b_ags_diff_8' |
| +b0 = '-1.502e-07+nlowvt_rf_base_m4_b_b0_diff_8' |
| +b1 = '1.902e-09+nlowvt_rf_base_m4_b_b1_diff_8' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 98.95 |
| +rdwmin = 0 |
| +rsw = 98.95 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.1865+nlowvt_rf_base_m4_b_voff_diff_8' |
| +nfactor = '1.795+nlowvt_rf_base_m4_b_nfactor_diff_8' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = 0 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.231 |
| +etab = 0.0001546 |
| +dsub = 0.4657 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = 5.82e-09 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.1703+nlowvt_rf_base_m4_b_pclm_diff_8' |
| +pdiblc1 = 0.2047 |
| +pdiblc2 = 0.002704 |
| +pdiblcb = -1 |
| +drout = 0.3367 |
| +pscbe1 = 3.731e+08 |
| +pscbe2 = 2e-06 |
| +pvag = 0 |
| +delta = 0.03202 |
| +alpha0 = 1.21e-07 |
| +alpha1 = 0.8767 |
| +beta0 = 14.77 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 0 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 0 |
| +bgidl = 2.3e+09 |
| +cgidl = 0.5 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 0 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 0 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 0 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 4.148e-09 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.2779+nlowvt_rf_base_m4_b_kt1_diff_8' |
| +kt2 = -0.02437 |
| +at = 7.203e+04 |
| +ute = -1.681 |
| +ua1 = 6.012e-10 |
| +ub1 = -7.32e-19 |
| +uc1 = 1.09e-12 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*nlowvt_rf_base_b_rbpb_mult' |
| +rbpd = 0.001 |
| +rbps = 0.001 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 9.0e+41 |
| +noib = 1.0e+27 |
| +noic = 800000000000.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 1.2 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = 1.35e-06 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.293 |
| +jss = 0.00275 |
| +jsws = 6e-10 |
| +xtis = 2 |
| +bvs = 11.9 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001229 |
| +tpbsw = 0 |
| +tpbswg = 0 |
| +tcj = 0.000792 |
| +tcjsw = 1e-05 |
| +tcjswg = 0 |
| +cgdo = '3.709e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgso = '3e-10*nlowvt_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cgdl = '7.4e-11*nlowvt_rf_base_b_overlap_mult' |
| +cf = 1e-11 |
| +clc = 1.2e-08 |
| +cle = 1.9 |
| +dlc = '2.9e-08+nlowvt_rf_base_b_dlc_diff+nlowvt_rf_base_dlc_rotweak' |
| +dwc = '0+nlowvt_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.3801 |
| +moin = 23.81 |
| +noff = 1 |
| +voffcv = -0.06 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.002*nlowvt_rf_base_b_ajunction_mult' |
| +mjs = 0.322 |
| +pbs = 0.9477 |
| +cjsws = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjsws = 0.001 |
| +pbsws = 0.4 |
| +cjswgs = '2.013e-10*nlowvt_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3 |
| +pbswgs = 0.9964 |
| ****** |
| |
