blob: 6b55c3f86ef98f54aee6602f0c401edc5586ece8 [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran nmos_bsim4.rf nmos -p -nnhvesd nhvesd_modelnamechanged.pm3 nhv_ov.pm ndiode_h_m31_iv.pm ndiode_h_m31_cv.pm nhvesd_bsimtranoutput.pm3
* Working Directory: /home/hai/models/s8/s8tee/models.3.1/nhvesd/combined
* Time: Tue Jun 5 10:28:39 2007
* Rule File: nmos_bsim4.rf
* Output File: nhvesd_bsimtranoutput.pm3
* Input Files:
* (1) nhvesd_modelnamechanged.pm3
* (2) nhv_ov.pm
* (3) ndiode_h_m31_iv.pm
* (4) ndiode_h_m31_cv.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 NMOS Model
.model nhvesd.0 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 1.7495e-05 wmax = 1.7505e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.814+nhvesd_vth0_diff_0'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_0'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109000+nhvesd_vsat_diff_0'
+ua = '1.3637e-009+nhvesd_ua_diff_0'
+ub = '1.4129e-018+nhvesd_ub_diff_0'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_0'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_0'
+a0 = '0.1054+nhvesd_a0_diff_0'
+keta = '-0.057372+nhvesd_keta_diff_0'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_0'
+b0 = '0+nhvesd_b0_diff_0'
+b1 = '0+nhvesd_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_0'
+nfactor = '0.114+nhvesd_nfactor_diff_0'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_0'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_0'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_0'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_0'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_0'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_0'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_0'
+cgidl = '10120+nhvesd_cgidl_diff_0'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_0'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.1 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 1.9495e-05 wmax = 1.9505e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.814+nhvesd_vth0_diff_1'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_1'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109850+nhvesd_vsat_diff_1'
+ua = '1.6364e-009+nhvesd_ua_diff_1'
+ub = '1.0455e-018+nhvesd_ub_diff_1'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_1'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_1'
+a0 = '0.1054+nhvesd_a0_diff_1'
+keta = '-0.057372+nhvesd_keta_diff_1'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_1'
+b0 = '0+nhvesd_b0_diff_1'
+b1 = '0+nhvesd_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_1'
+nfactor = '0.114+nhvesd_nfactor_diff_1'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_1'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_1'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_1'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_1'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_1'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_1'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_1'
+cgidl = '10120+nhvesd_cgidl_diff_1'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_1'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.2 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 2.1495e-05 wmax = 2.1505e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.814+nhvesd_vth0_diff_2'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_2'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '107440+nhvesd_vsat_diff_2'
+ua = '1.3637e-009+nhvesd_ua_diff_2'
+ub = '1.4129e-018+nhvesd_ub_diff_2'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_2'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_2'
+a0 = '0.1054+nhvesd_a0_diff_2'
+keta = '-0.057372+nhvesd_keta_diff_2'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_2'
+b0 = '0+nhvesd_b0_diff_2'
+b1 = '0+nhvesd_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_2'
+nfactor = '0.114+nhvesd_nfactor_diff_2'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_2'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_2'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_2'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_2'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_2'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_2'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_2'
+cgidl = '10120+nhvesd_cgidl_diff_2'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_2'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.3 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 2.3495e-05 wmax = 2.3505e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.814+nhvesd_vth0_diff_3'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_3'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108170+nhvesd_vsat_diff_3'
+ua = '1.3637e-009+nhvesd_ua_diff_3'
+ub = '1.4129e-018+nhvesd_ub_diff_3'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_3'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_3'
+a0 = '0.1054+nhvesd_a0_diff_3'
+keta = '-0.057372+nhvesd_keta_diff_3'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_3'
+b0 = '0+nhvesd_b0_diff_3'
+b1 = '0+nhvesd_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_3'
+nfactor = '0.114+nhvesd_nfactor_diff_3'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_3'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_3'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_3'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_3'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_3'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_3'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_3'
+cgidl = '10120+nhvesd_cgidl_diff_3'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_3'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.4 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 2.6495e-05 wmax = 2.6505e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.814+nhvesd_vth0_diff_4'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_4'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108170+nhvesd_vsat_diff_4'
+ua = '1.3637e-009+nhvesd_ua_diff_4'
+ub = '1.5358e-018+nhvesd_ub_diff_4'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_4'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_4'
+a0 = '0.1054+nhvesd_a0_diff_4'
+keta = '-0.057372+nhvesd_keta_diff_4'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_4'
+b0 = '0+nhvesd_b0_diff_4'
+b1 = '0+nhvesd_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_4'
+nfactor = '0.114+nhvesd_nfactor_diff_4'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_4'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_4'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_4'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_4'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_4'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_4'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_4'
+cgidl = '10120+nhvesd_cgidl_diff_4'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_4'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.5 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 3.0245e-05 wmax = 3.0255e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.798+nhvesd_vth0_diff_5'
+k1 = 0.76281
+k2 = '-0.071923+nhvesd_k2_diff_5'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '89500+nhvesd_vsat_diff_5'
+ua = '1.0364e-009+nhvesd_ua_diff_5'
+ub = '1.5358e-018+nhvesd_ub_diff_5'
+uc = 5.215e-011
+rdsw = '566.95+nhvesd_rdsw_diff_5'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.060184+nhvesd_u0_diff_5'
+a0 = '0.1054+nhvesd_a0_diff_5'
+keta = '-0.057372+nhvesd_keta_diff_5'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_5'
+b0 = '0+nhvesd_b0_diff_5'
+b1 = '0+nhvesd_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_5'
+nfactor = '0.114+nhvesd_nfactor_diff_5'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_5'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_5'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_5'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_5'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_5'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_5'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_5'
+cgidl = '10120+nhvesd_cgidl_diff_5'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_5'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.6 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 3.0245e-05 wmax = 3.0255e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.814+nhvesd_vth0_diff_6'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_6'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108170+nhvesd_vsat_diff_6'
+ua = '1.3637e-009+nhvesd_ua_diff_6'
+ub = '1.5358e-018+nhvesd_ub_diff_6'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_6'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_6'
+a0 = '0.1054+nhvesd_a0_diff_6'
+keta = '-0.057372+nhvesd_keta_diff_6'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_6'
+b0 = '0+nhvesd_b0_diff_6'
+b1 = '0+nhvesd_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_6'
+nfactor = '0.114+nhvesd_nfactor_diff_6'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_6'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_6'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_6'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_6'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_6'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_6'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_6'
+cgidl = '10120+nhvesd_cgidl_diff_6'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_6'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.7 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 4.0305e-05 wmax = 4.0315e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.805+nhvesd_vth0_diff_7'
+k1 = 0.76281
+k2 = '-0.081731+nhvesd_k2_diff_7'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108170+nhvesd_vsat_diff_7'
+ua = '1.1962e-009+nhvesd_ua_diff_7'
+ub = '1.8283e-018+nhvesd_ub_diff_7'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_7'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.066871+nhvesd_u0_diff_7'
+a0 = '0.1054+nhvesd_a0_diff_7'
+keta = '-0.057372+nhvesd_keta_diff_7'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_7'
+b0 = '0+nhvesd_b0_diff_7'
+b1 = '0+nhvesd_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_7'
+nfactor = '0.114+nhvesd_nfactor_diff_7'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_7'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_7'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_7'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 5.088e+008
+pscbe2 = 2e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.6845e-005
+alpha1 = 0.37039
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_7'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_7'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_7'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_7'
+cgidl = '10120+nhvesd_cgidl_diff_7'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_7'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.8 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 5.0985e-05 wmax = 5.0995e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.807+nhvesd_vth0_diff_8'
+k1 = 0.75481
+k2 = '-0.033568+nhvesd_k2_diff_8'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '91046+nhvesd_vsat_diff_8'
+ua = '1.1962e-009+nhvesd_ua_diff_8'
+ub = '1.7552e-018+nhvesd_ub_diff_8'
+uc = 8.4519e-011
+rdsw = '566.95+nhvesd_rdsw_diff_8'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.064299+nhvesd_u0_diff_8'
+a0 = '0.1054+nhvesd_a0_diff_8'
+keta = '-0.041308+nhvesd_keta_diff_8'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_8'
+b0 = '0+nhvesd_b0_diff_8'
+b1 = '0+nhvesd_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_8'
+nfactor = '0.114+nhvesd_nfactor_diff_8'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_8'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_8'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_8'
+pdiblc1 = 0.09332
+pdiblc2 = 0.0018
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 4.2400001e+009
+pscbe2 = 1e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 4.9691e-005
+alpha1 = 0.8052
+beta0 = 38.234
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_8'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_8'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_8'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_8'
+cgidl = '10120+nhvesd_cgidl_diff_8'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_8'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.9 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.45e-07 lmax = 5.55e-07 wmin = 5.0985e-05 wmax = 5.0995e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.815+nhvesd_vth0_diff_9'
+k1 = 0.76281
+k2 = '-0.072974+nhvesd_k2_diff_9'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109170+nhvesd_vsat_diff_9'
+ua = '1.1962e-009+nhvesd_ua_diff_9'
+ub = '1.8283e-018+nhvesd_ub_diff_9'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_9'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.064299+nhvesd_u0_diff_9'
+a0 = '0.1054+nhvesd_a0_diff_9'
+keta = '-0.057372+nhvesd_keta_diff_9'
+a1 = 0
+a2 = 0.65972622
+ags = '0.48+nhvesd_ags_diff_9'
+b0 = '0+nhvesd_b0_diff_9'
+b1 = '0+nhvesd_b1_diff_9'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_9'
+nfactor = '0.114+nhvesd_nfactor_diff_9'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_9'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.21835+nhvesd_eta0_diff_9'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_9'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 4.2400001e+009
+pscbe2 = 1e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 2.8558e-005
+alpha1 = 0.8052
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_9'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_9'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_9'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_9'
+cgidl = '10120+nhvesd_cgidl_diff_9'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_9'
+kt2 = -0.015814
+at = 38574
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 4.7889e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******
.model nhvesd.10 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 5.395e-06 wmax = 5.405e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '3.6e-008+nhvesd_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '-5.8413e-010+nhvesd_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = 0
+dwb = 3.3727471e-012
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.5164
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhvesd_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhvesd_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82+nhvesd_vth0_diff_10'
+k1 = 0.76281
+k2 = '-0.061842+nhvesd_k2_diff_10'
+k3 = 0
+dvt0 = 0
+dvt1 = 0.5
+dvt2 = -0.001152
+dvt0w = 0
+dvt1w = 5215200
+dvt2w = -0.036016
+w0 = 0
+k3b = 0
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108590+nhvesd_vsat_diff_10'
+ua = '6e-010+nhvesd_ua_diff_10'
+ub = '1.6038e-018+nhvesd_ub_diff_10'
+uc = 4.4957e-011
+rdsw = '566.95+nhvesd_rdsw_diff_10'
+prwb = 0.015804
+prwg = 5.4e-013
+wr = 1
+u0 = '0.057246+nhvesd_u0_diff_10'
+a0 = '0.00+nhvesd_a0_diff_10'
+keta = '-0.045533+nhvesd_keta_diff_10'
+a1 = 0
+a2 = 0.65972622
+ags = '1+nhvesd_ags_diff_10'
+b0 = '0+nhvesd_b0_diff_10'
+b1 = '0+nhvesd_b1_diff_10'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '0+nhvesd_voff_diff_10'
+nfactor = '0.114+nhvesd_nfactor_diff_10'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhvesd_tvoff_diff_10'
+cit = -0.0007128
+cdsc = 0
+cdscb = 0
+cdscd = 4e-012
+eta0 = '0.059173+nhvesd_eta0_diff_10'
+etab = -0.0031079
+dsub = 0.5
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.23915+nhvesd_pclm_diff_10'
+pdiblc1 = 0.09332
+pdiblc2 = 0
+pdiblcb = -0.26831
+drout = 0.2822
+pscbe1 = 4.2400001e+009
+pscbe2 = 1e-008
+pvag = 1.9901676
+delta = 0.0445
+alpha0 = 4.6061e-005
+alpha1 = 0.8052
+beta0 = 39.827
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhvesd_pdits_diff_10'
+pditsl = 0
+pditsd = '0+nhvesd_pditsd_diff_10'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.4829e-007+nhvesd_agidl_diff_10'
+bgidl = '2.4214e+009+nhvesd_bgidl_diff_10'
+cgidl = '10120+nhvesd_cgidl_diff_10'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.34313+nhvesd_kt1_diff_10'
+kt2 = -0.015814289
+at = 30614
+ute = -1.4571
+ua1 = 3.4582e-009
+ub1 = -3.4538e-018
+uc1 = 1.6097e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 2
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhvesd_overlap_mult'
+cgso = '3.0674e-010*nhvesd_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhvesd_overlap_mult'
+cgdl = '5e-011*nhvesd_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhvesd_dlc_diff+nhvesd_dlc_rotweak'
+dwc = '0+nhvesd_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhvesd_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhvesd_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhvesd_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
******