| ********************************************************************************** |
| .subckt nhvrf_3p50m10_b d g s b m=1 |
| .model nhv_rf_base_m10_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8292+nhv_rf_base_m10_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m10_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m10_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m10_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06175+nhv_rf_base_m10_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7376+nhv_rf_base_m10_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m10_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1000*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 1000 |
| +rbps = 1000 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.048e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2969 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m10_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m10_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m10_b_vsat_diff_1' |
| +ua = '1.724e-09+nhv_rf_base_m10_b_ua_diff_1' |
| +ub = '1.624e-18+nhv_rf_base_m10_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06545+nhv_rf_base_m10_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7664+nhv_rf_base_m10_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3207+nhv_rf_base_m10_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.377 |
| +ua1 = 3.094e-09 |
| +ub1 = -1.812e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '700*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 700 |
| +rbps = 700 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.6e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '2.848e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m10_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.085e-06 wmax = 7.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.811+nhv_rf_base_m10_b_vth0_diff_2' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_2' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m10_b_vsat_diff_2' |
| +ua = '1.89e-09+nhv_rf_base_m10_b_ua_diff_2' |
| +ub = '1.437e-18+nhv_rf_base_m10_b_ub_diff_2' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_2' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0655+nhv_rf_base_m10_b_u0_diff_2' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_2' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_2' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_2' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_2' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.687+nhv_rf_base_m10_b_nfactor_diff_2' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_2' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m10_b_kt1_diff_2' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '550*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 550 |
| +rbps = 550 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.5e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.4e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '1.8e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '2.748e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| m_nhvrf_3p50m10_b d g s b nhv_rf_base_m10_b w=3.01 l=0.50 m='10*m' ad=0.421 pd=3.29 as=0.51 ps=3.948 nrd=40.44 nrs=33.70 |
| m_nhvrf_3p50m10_b_dummy b b s b nhv_rf_base_m10_b w=3.01 l=0.50 m='2*m' ad=0.903 pd=6.62 as=0.0 ps=0.0 nrd=20.22 nrs=0.0 |
| .ends nhvrf_3p50m10_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_3p50m4_b d g s b m=1 |
| .model nhv_rf_base_m4_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8372+nhv_rf_base_m4_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m4_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m4_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m4_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0636+nhv_rf_base_m4_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.627+nhv_rf_base_m4_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m4_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 400 |
| +rbps = 400 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.6e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.1e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m4_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.50e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m4_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.035e+05+nhv_rf_base_m4_b_vsat_diff_1' |
| +ua = '1.512e-09+nhv_rf_base_m4_b_ua_diff_1' |
| +ub = '8.845e-19+nhv_rf_base_m4_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06175+nhv_rf_base_m4_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.6181+nhv_rf_base_m4_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m4_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '280*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 280 |
| +rbps = 280 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9e-7+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.755e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1.00e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m4_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.085e-06 wmax = 7.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.811+nhv_rf_base_m4_b_vth0_diff_2' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_2' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m4_b_vsat_diff_2' |
| +ua = '1.588e-09+nhv_rf_base_m4_b_ua_diff_2' |
| +ub = '8.757e-19+nhv_rf_base_m4_b_ub_diff_2' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_2' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06298+nhv_rf_base_m4_b_u0_diff_2' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_2' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_2' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_2' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_2' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7232+nhv_rf_base_m4_b_nfactor_diff_2' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_2' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m4_b_kt1_diff_2' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '220*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 220 |
| +rbps = 220 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.5e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.2e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF_m10.rf nmos -p -nnhv_rf_base nhv_rf_base_m10_b.pm nhv_rf_base_m10_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/nhv/combined |
| * Time: Mon May 5 12:53:26 2008 |
| * Rule File: nmos_bsim4_RF_m10.rf |
| * Output File: nhv_rf_base_m10_b_bsimtranout.pm |
| * Input Files: |
| * (1) nhv_rf_base_m10_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| m_nhvrf_3p50m4_b d g s b nhv_rf_base_m4_b w=3.01 l=0.50 m='4*m' ad=0.421 pd=3.29 as=0.63 ps=4.935 nrd=40.44 nrs=26.96 |
| m_nhvrf_3p50m4_b_dummy b b s b nhv_rf_base_m4_b w=3.01 l=0.50 m='2*m' ad=0.903 pd=6.62 as=0.0 ps=0.0 nrd=20.22 nrs=0.0 |
| .ends nhvrf_3p50m4_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_5p50m10_b d g s b m=1 |
| .model nhv_rf_base_m10_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8292+nhv_rf_base_m10_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m10_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m10_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m10_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06175+nhv_rf_base_m10_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7376+nhv_rf_base_m10_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m10_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1000*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 1000 |
| +rbps = 1000 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.048e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2969 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m10_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m10_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m10_b_vsat_diff_1' |
| +ua = '1.724e-09+nhv_rf_base_m10_b_ua_diff_1' |
| +ub = '1.624e-18+nhv_rf_base_m10_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06545+nhv_rf_base_m10_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7664+nhv_rf_base_m10_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3207+nhv_rf_base_m10_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.377 |
| +ua1 = 3.094e-09 |
| +ub1 = -1.812e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '700*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 700 |
| +rbps = 700 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.6e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '2.848e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m10_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.085e-06 wmax = 7.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.811+nhv_rf_base_m10_b_vth0_diff_2' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_2' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m10_b_vsat_diff_2' |
| +ua = '1.89e-09+nhv_rf_base_m10_b_ua_diff_2' |
| +ub = '1.437e-18+nhv_rf_base_m10_b_ub_diff_2' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_2' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0655+nhv_rf_base_m10_b_u0_diff_2' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_2' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_2' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_2' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_2' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.687+nhv_rf_base_m10_b_nfactor_diff_2' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_2' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m10_b_kt1_diff_2' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '550*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 550 |
| +rbps = 550 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.5e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.4e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '1.8e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '2.748e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| m_nhvrf_5p50m10_b d g s b nhv_rf_base_m10_b w=5.05 l=0.50 m='10*m' ad=0.707 pd=5.33 as=0.85 ps=6.396 nrd=24.27 nrs=20.22 |
| m_nhvrf_5p50m10_b_dummy b b s b nhv_rf_base_m10_b w=5.05 l=0.50 m='2*m' ad=1.515 pd=10.7 as=0.0 ps=0.0 nrd=12.13 nrs=0.0 |
| .ends nhvrf_5p50m10_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_5p50m4_b d g s b m=1 |
| .model nhv_rf_base_m4_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8372+nhv_rf_base_m4_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m4_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m4_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m4_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0636+nhv_rf_base_m4_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.627+nhv_rf_base_m4_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m4_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 400 |
| +rbps = 400 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.6e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.1e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m4_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.50e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m4_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.035e+05+nhv_rf_base_m4_b_vsat_diff_1' |
| +ua = '1.512e-09+nhv_rf_base_m4_b_ua_diff_1' |
| +ub = '8.845e-19+nhv_rf_base_m4_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06175+nhv_rf_base_m4_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.6181+nhv_rf_base_m4_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m4_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '280*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 280 |
| +rbps = 280 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9e-7+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.755e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1.00e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m4_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.085e-06 wmax = 7.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.811+nhv_rf_base_m4_b_vth0_diff_2' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_2' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m4_b_vsat_diff_2' |
| +ua = '1.588e-09+nhv_rf_base_m4_b_ua_diff_2' |
| +ub = '8.757e-19+nhv_rf_base_m4_b_ub_diff_2' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_2' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06298+nhv_rf_base_m4_b_u0_diff_2' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_2' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_2' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_2' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_2' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7232+nhv_rf_base_m4_b_nfactor_diff_2' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_2' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m4_b_kt1_diff_2' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '220*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 220 |
| +rbps = 220 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.5e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.2e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF_m10.rf nmos -p -nnhv_rf_base nhv_rf_base_m10_b.pm nhv_rf_base_m10_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/nhv/combined |
| * Time: Mon May 5 12:53:26 2008 |
| * Rule File: nmos_bsim4_RF_m10.rf |
| * Output File: nhv_rf_base_m10_b_bsimtranout.pm |
| * Input Files: |
| * (1) nhv_rf_base_m10_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| m_nhvrf_5p50m4_b d g s b nhv_rf_base_m4_b w=5.05 l=0.50 m='4*m' ad=0.707 pd=5.33 as=1.06 ps=7.995 nrd=24.267 nrs=16.178 |
| m_nhvrf_5p50m4_b_dummy b b s b nhv_rf_base_m4_b w=5.05 l=0.50 m='2*m' ad=1.515 pd=10.7 as=0.0 ps=0.0 nrd=12.13 nrs=0.0 |
| .ends nhvrf_5p50m4_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_7p50m10_b d g s b m=1 |
| .model nhv_rf_base_m10_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8292+nhv_rf_base_m10_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m10_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m10_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m10_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06175+nhv_rf_base_m10_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7376+nhv_rf_base_m10_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m10_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '1000*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 1000 |
| +rbps = 1000 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.048e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.2969 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m10_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 5.045e-06 wmax = 5.055e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m10_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m10_b_vsat_diff_1' |
| +ua = '1.724e-09+nhv_rf_base_m10_b_ua_diff_1' |
| +ub = '1.624e-18+nhv_rf_base_m10_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06545+nhv_rf_base_m10_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7664+nhv_rf_base_m10_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3207+nhv_rf_base_m10_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.377 |
| +ua1 = 3.094e-09 |
| +ub1 = -1.812e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '700*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 700 |
| +rbps = 700 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.6e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '2.848e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m10_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.085e-06 wmax = 7.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.811+nhv_rf_base_m10_b_vth0_diff_2' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m10_b_k2_diff_2' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m10_b_vsat_diff_2' |
| +ua = '1.89e-09+nhv_rf_base_m10_b_ua_diff_2' |
| +ub = '1.437e-18+nhv_rf_base_m10_b_ub_diff_2' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m10_b_rdsw_diff_2' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0655+nhv_rf_base_m10_b_u0_diff_2' |
| +a0 = '0.1745+nhv_rf_base_m10_b_a0_diff_2' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m10_b_ags_diff_2' |
| +b0 = '3.293e-08+nhv_rf_base_m10_b_b0_diff_2' |
| +b1 = '0+nhv_rf_base_m10_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m10_b_voff_diff_2' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.687+nhv_rf_base_m10_b_nfactor_diff_2' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m10_b_pclm_diff_2' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m10_b_kt1_diff_2' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '550*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 550 |
| +rbps = 550 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.5e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.4e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '1.8e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '2.748e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| m_nhvrf_7p50m10_b d g s b nhv_rf_base_m10_b w=7.09 l=0.50 m='10*m' ad=0.993 pd=7.37 as=1.19 ps=8.844 nrd=17.33 nrs=14.44 |
| m_nhvrf_7p50m10_b_dummy b b s b nhv_rf_base_m10_b w=7.09 l=0.50 m='2*m' ad=2.127 pd=14.78 as=0.0 ps=0.0 nrd=8.67 nrs=0.0 |
| .ends nhvrf_7p50m10_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_7p50m4_b d g s b m=1 |
| .model nhv_rf_base_m4_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8372+nhv_rf_base_m4_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m4_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m4_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m4_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0636+nhv_rf_base_m4_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.627+nhv_rf_base_m4_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m4_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '400*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 400 |
| +rbps = 400 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.25e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.6e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.1e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m4_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.50e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m4_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.035e+05+nhv_rf_base_m4_b_vsat_diff_1' |
| +ua = '1.512e-09+nhv_rf_base_m4_b_ua_diff_1' |
| +ub = '8.845e-19+nhv_rf_base_m4_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06175+nhv_rf_base_m4_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.6181+nhv_rf_base_m4_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m4_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '280*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 280 |
| +rbps = 280 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9e-7+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.755e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1.00e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m4_b.2 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.085e-06 wmax = 7.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.811+nhv_rf_base_m4_b_vth0_diff_2' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m4_b_k2_diff_2' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.056e+05+nhv_rf_base_m4_b_vsat_diff_2' |
| +ua = '1.588e-09+nhv_rf_base_m4_b_ua_diff_2' |
| +ub = '8.757e-19+nhv_rf_base_m4_b_ub_diff_2' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m4_b_rdsw_diff_2' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.06298+nhv_rf_base_m4_b_u0_diff_2' |
| +a0 = '0.1745+nhv_rf_base_m4_b_a0_diff_2' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m4_b_ags_diff_2' |
| +b0 = '3.293e-08+nhv_rf_base_m4_b_b0_diff_2' |
| +b1 = '0+nhv_rf_base_m4_b_b1_diff_2' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m4_b_voff_diff_2' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7232+nhv_rf_base_m4_b_nfactor_diff_2' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m4_b_pclm_diff_2' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m4_b_kt1_diff_2' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '220*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 220 |
| +rbps = 220 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.5e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.3e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '3.2e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.348e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.3069 |
| +pbswgs = 0.99 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF_m10.rf nmos -p -nnhv_rf_base nhv_rf_base_m10_b.pm nhv_rf_base_m10_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/nhv/combined |
| * Time: Mon May 5 12:53:26 2008 |
| * Rule File: nmos_bsim4_RF_m10.rf |
| * Output File: nhv_rf_base_m10_b_bsimtranout.pm |
| * Input Files: |
| * (1) nhv_rf_base_m10_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| m_nhvrf_7p50m4_b d g s b nhv_rf_base_m4_b w=7.09 l=0.50 m='4*m' ad=0.993 pd=7.37 as=1.49 ps=11.055 nrd=17.33 nrs=11.56 |
| m_nhvrf_7p50m4_b_dummy b b s b nhv_rf_base_m4_b w=7.09 l=0.50 m='2*m' ad=2.127 pd=14.78 as=0.0 ps=0.0 nrd=8.67 nrs=0.0 |
| .ends nhvrf_7p50m4_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_5p50m2_b d g s b m=1 |
| .model nhv_rf_base_m2_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8292+nhv_rf_base_m2_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m2_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m2_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m2_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m2_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m2_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0636+nhv_rf_base_m2_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m2_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m2_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m2_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m2_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m2_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.627+nhv_rf_base_m2_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m2_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m2_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 200 |
| +rbps = 200 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9e-07+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '4.1e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '8e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.948e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.1869 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m2_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.50e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m2_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m2_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.035e+05+nhv_rf_base_m2_b_vsat_diff_1' |
| +ua = '1.512e-09+nhv_rf_base_m2_b_ua_diff_1' |
| +ub = '8.845e-19+nhv_rf_base_m2_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m2_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0626+nhv_rf_base_m2_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m2_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m2_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m2_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m2_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m2_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7788+nhv_rf_base_m2_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m2_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m2_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '140*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 140 |
| +rbps = 140 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.21e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '2.755e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '5e-08+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.748e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.1569 |
| +pbswgs = 0.99 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF_m4.rf nmos -p -nnhv_rf_base nhv_rf_base_m4_b.pm nhv_rf_base_m4_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/nhv/combined |
| * Time: Mon May 5 12:53:14 2008 |
| * Rule File: nmos_bsim4_RF_m4.rf |
| * Output File: nhv_rf_base_m4_b_bsimtranout.pm |
| * Input Files: |
| * (1) nhv_rf_base_m4_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| m_nhvrf_5p50m2_b d g s b nhv_rf_base_m2_b w=5.05 l=0.50 m='2*m' ad=0.707 pd=5.33 as=1.414 ps=10.66 nrd=24.267 nrs=12.133 |
| m_nhvrf_5p50m2_b_dummy b b s b nhv_rf_base_m2_b w=5.05 l=0.50 m='2*m' ad=1.515 pd=10.7 as=0.0 ps=0.0 nrd=12.13 nrs=0.0 |
| .ends nhvrf_5p50m2_b |
| ********************************************************************************** |
| ********************************************************************************** |
| .subckt nhvrf_3p50m2_b d g s b m=1 |
| .model nhv_rf_base_m2_b.0 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 3.005e-06 wmax = 3.015e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.5e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.8292+nhv_rf_base_m2_b_vth0_diff_0' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m2_b_k2_diff_0' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.0868e+05+nhv_rf_base_m2_b_vsat_diff_0' |
| +ua = '1.663e-09+nhv_rf_base_m2_b_ua_diff_0' |
| +ub = '1.238e-18+nhv_rf_base_m2_b_ub_diff_0' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m2_b_rdsw_diff_0' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0636+nhv_rf_base_m2_b_u0_diff_0' |
| +a0 = '0.1745+nhv_rf_base_m2_b_a0_diff_0' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m2_b_ags_diff_0' |
| +b0 = '3.293e-08+nhv_rf_base_m2_b_b0_diff_0' |
| +b1 = '0+nhv_rf_base_m2_b_b1_diff_0' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m2_b_voff_diff_0' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.627+nhv_rf_base_m2_b_nfactor_diff_0' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m2_b_pclm_diff_0' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3307+nhv_rf_base_m2_b_kt1_diff_0' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.604e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '200*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 200 |
| +rbps = 200 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '9e-07+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.7e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '4.1e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '8e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '1e-07+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.948e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.1869 |
| +pbswgs = 0.99 |
| ****** |
| |
| .model nhv_rf_base_m2_b.1 nmos |
| * |
| *DC IV MOS PARAMETERS |
| * |
| +lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.095e-06 |
| +level = 54 |
| +tnom = 30 |
| +version = 4.5 |
| +toxm = 1.16e-08 |
| +xj = 1.5e-07 |
| +lln = 1 |
| +lwn = 1 |
| +wln = 1 |
| +wwn = 1 |
| +lint = '7.345e-08+nhv_rf_base_b_lint_diff' |
| +ll = 0 |
| +lw = 0 |
| +lwl = 0 |
| +wint = '2.135e-08+nhv_rf_base_b_wint_diff' |
| +wl = 0 |
| +ww = 0 |
| +wwl = 0 |
| +xl = 0 |
| +xw = 0 |
| +mobmod = 0 |
| +binunit = 2 |
| +dwg = -4.129e-09 |
| +dwb = -1.694e-09 |
| *NEW BSIM4 Parameters(Model Selectors) |
| +igcmod = 0 |
| +igbmod = 0 |
| +rgatemod = 3 |
| +rbodymod = 1 |
| +trnqsmod = 0 |
| +acnqsmod = 0 |
| +fnoimod = 1 |
| +tnoimod = 1 |
| +permod = 1 |
| +geomod = 0 |
| +rdsmod = 1 |
| +tempmod = 0 |
| ******* |
| *NEW BSIM4 Parameters(4.4 Version) |
| +lintnoi = 0.0 |
| +vfbsdoff = 0 |
| +lambda = 0 |
| +vtl = 0 |
| +lc = 5e-09 |
| +xn = 3 |
| +rnoia = 0.794 |
| +rnoib = 0.38 |
| +tnoia = 7.50e+06 |
| +tnoib = 7.2e+06 |
| *NEW BSIM4 Parameters(Process Parameters) |
| +epsrox = 3.9 |
| +toxe = '1.16e-08*nhv_rf_base_b_toxe_mult' dev/gauss = '1.16e-08*nhv_rf_base_b_toxe_mult*(nhv_rf_b_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))' |
| +dtox = 0 |
| +ndep = 6e+17 |
| +nsd = 1e+20 |
| +rshg = '49.2+nhv_rf_base_b_rshg_diff' |
| **** |
| +rsh = 1 |
| * |
| * THRESHOLD VOLTAGE PARAMETERS |
| * |
| +vth0 = '0.815+nhv_rf_base_m2_b_vth0_diff_1' |
| +k1 = 0.8833 |
| +k2 = '-0.03308+nhv_rf_base_m2_b_k2_diff_1' |
| +k3 = -0.884 |
| +dvt0 = 0 |
| +dvt1 = 0.53 |
| +dvt2 = -0.1925 |
| +dvt0w = 0.16 |
| +dvt1w = 6.909e+06 |
| +dvt2w = -0.03602 |
| +w0 = 0 |
| +k3b = 0.43 |
| *NEW BSIM4 Parameters for Level 54 |
| +phin = 0 |
| +lpe0 = 2.5e-08 |
| +lpeb = -2.182e-07 |
| +vbm = -3 |
| +dvtp0 = 0 |
| +dvtp1 = 0 |
| * |
| * MOBILITY PARAMETERS |
| * |
| +vsat = '1.035e+05+nhv_rf_base_m2_b_vsat_diff_1' |
| +ua = '1.512e-09+nhv_rf_base_m2_b_ua_diff_1' |
| +ub = '8.845e-19+nhv_rf_base_m2_b_ub_diff_1' |
| +uc = 6.62e-11 |
| +rdsw = '724.6+nhv_rf_base_m2_b_rdsw_diff_1' |
| +prwb = 0.05626 |
| +prwg = 0.048 |
| +wr = 1 |
| +u0 = '0.0626+nhv_rf_base_m2_b_u0_diff_1' |
| +a0 = '0.1745+nhv_rf_base_m2_b_a0_diff_1' |
| +keta = -0.01066 |
| +a1 = 0 |
| +a2 = 0.6597 |
| +ags = '0+nhv_rf_base_m2_b_ags_diff_1' |
| +b0 = '3.293e-08+nhv_rf_base_m2_b_b0_diff_1' |
| +b1 = '0+nhv_rf_base_m2_b_b1_diff_1' |
| *NEW BSIM4 Parameters(Mobility Parameters) |
| +eu = 1.67 |
| +rdswmin = 0 |
| +rdw = 370 |
| +rdwmin = 0 |
| +rsw = 370 |
| +rswmin = 0 |
| ***** |
| * |
| * SUBTHRESHOLD CURRENT PARAMETERS |
| * |
| +voff = '-0.2309+nhv_rf_base_m2_b_voff_diff_1' dev/gauss = 'nhv_rf_b_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +nfactor = '0.7788+nhv_rf_base_m2_b_nfactor_diff_1' dev/gauss = 'nhv_rf_b_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))' |
| +up = 0 |
| +ud = 0 |
| +lp = 1 |
| +tvfbsdoff = 0 |
| +tvoff = 0 |
| +cit = -0.0008 |
| +cdsc = 0 |
| +cdscb = 0 |
| +cdscd = 0 |
| +eta0 = 0.05 |
| +etab = -0.01932 |
| +dsub = 0.2822 |
| *NEW BSIM4 Parameters(Sub-threshold parameters) |
| +voffl = -4.258e-07 |
| +minv = 0 |
| ***** |
| * |
| * ROUT PARAMETERS |
| * |
| +pclm = '0.5653+nhv_rf_base_m2_b_pclm_diff_1' |
| +pdiblc1 = 0.211 |
| +pdiblc2 = 0.015 |
| +pdiblcb = -0.2683 |
| +drout = 0.3896 |
| +pscbe1 = 9.373e+08 |
| +pscbe2 = 1.68e-06 |
| +pvag = 1.99 |
| +delta = 0.03542 |
| +alpha0 = 1.447e-05 |
| +alpha1 = 0 |
| +beta0 = 36.96 |
| *NEW BSIM4 Parameters(ROUT Parameters) |
| +fprout = 10.13 |
| +pdits = 0 |
| +pditsl = 0 |
| +pditsd = 0 |
| **** |
| *NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS) |
| +agidl = 5.06e-11 |
| +bgidl = 1.058e+09 |
| +cgidl = 4000 |
| +egidl = 0.8 |
| **** |
| *NEW BSIM4 Parameters(Gate Leakage Current Parameters) |
| +aigbacc = 1 |
| +bigbacc = 0 |
| +cigbacc = 0 |
| +nigbacc = 1 |
| +aigbinv = 0.35 |
| +bigbinv = 0.03 |
| +cigbinv = 0.006 |
| +eigbinv = 1.1 |
| +nigbinv = 3 |
| +aigc = 0.43 |
| +bigc = 0.054 |
| +cigc = 0.075 |
| +nigc = 1 |
| +aigsd = 0.43 |
| +bigsd = 0.054 |
| +cigsd = 0.075 |
| +dlcig = 0 |
| +poxedge = 1 |
| +pigcd = 1 |
| +ntox = 1 |
| +toxref = 1.16e-08 |
| ***** |
| * |
| * TEMPERATURE EFFECTS PARAMETERS |
| * |
| +kt1 = '-0.3507+nhv_rf_base_m2_b_kt1_diff_1' |
| +kt2 = -0.01915 |
| +at = 4e+04 |
| +ute = -1.299 |
| +ua1 = 3.004e-09 |
| +ub1 = -3.553e-18 |
| +uc1 = -5.982e-11 |
| +kt1l = 0 |
| +prt = 0 |
| *NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS) |
| +xrcrg1 = 10 |
| +xrcrg2 = 2 |
| +rbpb = '140*nhv_rf_base_b_rbpb_mult' |
| +rbpd = 140 |
| +rbps = 140 |
| +rbdb = 1e+05 |
| +rbsb = 1e+05 |
| +gbmin = 1e-12 |
| **** |
| *NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS) |
| +noia = 2.6e+41 |
| +noib = 0.0 |
| +noic = 0.0 |
| +em = 4.1e+07 |
| +af = 1 |
| +ef = 0.89 |
| +kf = 0 |
| +ntnoi = 1 |
| ***** |
| *NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS) |
| +dmcg = 0 |
| +dmcgt = 0 |
| +dmdg = 0 |
| +xgw = '1.21e-06+nhv_rf_base_b_xgw_diff' |
| +xgl = 0 |
| +ngcon = 2 |
| **** |
| * |
| *DIODE DC IV PARAMTERS |
| * |
| *NEW BSIM4 Parameters(DIODE DC IV parameters) |
| +diomod = 1 |
| +njs = 1.077 |
| +jss = 0.000375 |
| +jsws = 5.84e-11 |
| +xtis = 0.76 |
| +bvs = 12.64 |
| +xjbvs = 1 |
| +ijthsrev = 0.1 |
| +ijthsfwd = 0.1 |
| * |
| * DIODE and FET CAPACITANCE PARAMETERS |
| * |
| +tpb = 0.001344 |
| +tpbsw = 0.0009901 |
| +tpbswg = 0 |
| +tcj = 0.0006743 |
| +tcjsw = 0.0002493 |
| +tcjswg = 0 |
| +cgdo = '2.2e-10*nhv_rf_base_b_overlap_mult' |
| +cgso = '2.755e-10*nhv_rf_base_b_overlap_mult' |
| +cgbo = 0 |
| +capmod = 2 |
| +xpart = 0 |
| +cgsl = '5e-11*nhv_rf_base_b_overlap_mult' |
| +cgdl = '2e-10*nhv_rf_base_b_overlap_mult' |
| +cf = 0 |
| +clc = 1e-11 |
| +cle = 0.6 |
| +dlc = '5e-08+nhv_rf_base_b_dlc_diff+nhv_rf_base_dlc_rotweak' |
| +dwc = '0+nhv_rf_base_b_dwc_diff' |
| +vfbcv = -1 |
| +acde = 0.4176 |
| +moin = 15 |
| +noff = 2 |
| +voffcv = -0.1204 |
| +ngate = 1e+23 |
| +lwc = 0 |
| +llc = 0 |
| +lwlc = 0 |
| +wlc = 0 |
| +wwc = 0 |
| +wwlc = 0 |
| *NEW BSIM4 Parameters(FET and DIODE capacitance parameters) |
| +ckappas = 0.6 |
| +cjs = '0.001*nhv_rf_base_b_ajunction_mult' |
| +mjs = 0.295 |
| +pbs = 0.985 |
| +cjsws = '4.864e-10*nhv_rf_base_b_pjunction_mult' |
| +mjsws = 0.03759 |
| +pbsws = 0.8907 |
| +cjswgs = '3.748e-10*nhv_rf_base_b_pjunction_mult' |
| +mjswgs = 0.1569 |
| +pbswgs = 0.99 |
| ****** |
| |
| * BSIMTran Version 0.1.24, Created on 4-26-2002 |
| * Username: ovr |
| * Command Line: /proj/tlib/ll65p/config/cydir/bin/lnx86/bsimtran nmos_bsim4_RF_m4.rf nmos -p -nnhv_rf_base nhv_rf_base_m4_b.pm nhv_rf_base_m4_b_bsimtranout.pm |
| * Working Directory: /home/ovr/work/s8_work/models.3.2/rev_model/nhv/combined |
| * Time: Mon May 5 12:53:14 2008 |
| * Rule File: nmos_bsim4_RF_m4.rf |
| * Output File: nhv_rf_base_m4_b_bsimtranout.pm |
| * Input Files: |
| * (1) nhv_rf_base_m4_b.pm |
| *copyright, Cypress Semiconductor, 2002 |
| *BSIM3.V3 NMOS Model |
| |
| m_nhvrf_3p50m2_b d g s b nhv_rf_base_m2_b w=3.01 l=0.50 m='2*m' ad=0.42 pd=3.29 as=0.84 ps=6.58 nrd=40.44 nrs=20.22 |
| m_nhvrf_3p50m2_b_dummy b b s b nhv_rf_base_m2_b w=3.01 l=0.50 m='2*m' ad=0.903 pd=6.62 as=0.0 ps=0.0 nrd=20.22 nrs=0.0 |
| .ends nhvrf_3p50m2_b |
| ********************************************************************************** |
