blob: 915f3d01dc449418f50b24ca123788a74d509e88 [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran nmos_bsim4.rf nmos -p -nnhv nhv_modelnamechanged.pm3 nhv_ov.pm ndiode_h_m31_iv.pm ndiode_h_m31_cv.pm nhv_bsimtranoutput.pm3
* Working Directory: /home/hai/models/s8/s8tee/models.3.1/nhv/combined
* Time: Fri Jun 8 14:35:41 2007
* Rule File: nmos_bsim4.rf
* Output File: nhv_bsimtranoutput.pm3
* Input Files:
* (1) nhv_modelnamechanged.pm3
* (2) nhv_ov.pm
* (3) ndiode_h_m31_iv.pm
* (4) ndiode_h_m31_cv.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 NMOS Model
.model nhv.0 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.995e-06 wmax = 1.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84203+nhv_vth0_diff_0'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_0'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '107890+nhv_vsat_diff_0'
+ua = '-1.498e-010+nhv_ua_diff_0'
+ub = '2.1238e-018+nhv_ub_diff_0'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_0'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_0'
+a0 = '1.1222+nhv_a0_diff_0'
+keta = '-0.01066+nhv_keta_diff_0'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_0'
+b0 = '3.2933e-008+nhv_b0_diff_0'
+b1 = '0+nhv_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_0' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_0' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_0'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_0'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_0'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_0'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_0'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_0'
+bgidl = '1.058e009+nhv_bgidl_diff_0'
+cgidl = '4000+nhv_cgidl_diff_0'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_0'
+kt2 = -0.019151
+at = 49600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.1 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.4995e-05 wmax = 1.5005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83003+nhv_vth0_diff_1'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_1'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '97207+nhv_vsat_diff_1'
+ua = '-1.498e-010+nhv_ua_diff_1'
+ub = '2.0388e-018+nhv_ub_diff_1'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_1'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_1'
+a0 = '0.74065+nhv_a0_diff_1'
+keta = '-0.027168+nhv_keta_diff_1'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_1'
+b0 = '3.2933e-008+nhv_b0_diff_1'
+b1 = '0+nhv_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_1' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_1' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_1'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_1'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.33405+nhv_pclm_diff_1'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 32.525
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_1'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_1'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_1'
+bgidl = '1.058e009+nhv_bgidl_diff_1'
+cgidl = '4000+nhv_cgidl_diff_1'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.36273+nhv_kt1_diff_1'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.4523e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.2 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.4995e-05 wmax = 1.5005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83003+nhv_vth0_diff_2'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_2'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '105660+nhv_vsat_diff_2'
+ua = '-1.498e-010+nhv_ua_diff_2'
+ub = '2.1238e-018+nhv_ub_diff_2'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_2'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044006+nhv_u0_diff_2'
+a0 = '1.1222+nhv_a0_diff_2'
+keta = '-0.01066+nhv_keta_diff_2'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_2'
+b0 = '3.2933e-008+nhv_b0_diff_2'
+b1 = '0+nhv_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_2' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_2' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_2'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_2'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0792+nhv_pclm_diff_2'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_2'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_2'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_2'
+bgidl = '1.058e009+nhv_bgidl_diff_2'
+cgidl = '4000+nhv_cgidl_diff_2'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_2'
+kt2 = -0.019151
+at = 41664
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.3 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.85907+nhv_vth0_diff_3'
+k1 = 0.88325
+k2 = '-0.019258+nhv_k2_diff_3'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '103150+nhv_vsat_diff_3'
+ua = '-1.498e-010+nhv_ua_diff_3'
+ub = '1.8265e-018+nhv_ub_diff_3'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_3'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_3'
+a0 = '1.1222+nhv_a0_diff_3'
+keta = '-0.01066+nhv_keta_diff_3'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_3'
+b0 = '3.2933e-008+nhv_b0_diff_3'
+b1 = '0+nhv_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_3' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_3' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_3'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_3'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1563+nhv_pclm_diff_3'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.7777e-005
+alpha1 = 0
+beta0 = 35.482
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_3'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_3'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_3'
+bgidl = '1.058e009+nhv_bgidl_diff_3'
+cgidl = '4000+nhv_cgidl_diff_3'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_3'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.4 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83907+nhv_vth0_diff_4'
+k1 = 0.88325
+k2 = '-0.019258+nhv_k2_diff_4'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '111130+nhv_vsat_diff_4'
+ua = '-1.498e-010+nhv_ua_diff_4'
+ub = '1.8265e-018+nhv_ub_diff_4'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_4'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.041478+nhv_u0_diff_4'
+a0 = '1.1222+nhv_a0_diff_4'
+keta = '-0.016843+nhv_keta_diff_4'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_4'
+b0 = '3.2933e-008+nhv_b0_diff_4'
+b1 = '0+nhv_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_4' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_4' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_4'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_4'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.43939+nhv_pclm_diff_4'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.331e-005
+alpha1 = 0
+beta0 = 28.829
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_4'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_4'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_4'
+bgidl = '1.058e009+nhv_bgidl_diff_4'
+cgidl = '4000+nhv_cgidl_diff_4'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_4'
+kt2 = -0.019151
+at = 20000
+ute = -1.1947
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.5 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82471+nhv_vth0_diff_5'
+k1 = 0.88325
+k2 = '-0.019258+nhv_k2_diff_5'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '116180+nhv_vsat_diff_5'
+ua = '-1.498e-010+nhv_ua_diff_5'
+ub = '1.7534e-018+nhv_ub_diff_5'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_5'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.039819+nhv_u0_diff_5'
+a0 = '1.1222+nhv_a0_diff_5'
+keta = '-0.025477+nhv_keta_diff_5'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_5'
+b0 = '3.2933e-008+nhv_b0_diff_5'
+b1 = '0+nhv_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_5' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_5' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_5'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_5'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.43939+nhv_pclm_diff_5'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 26.7
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_5'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_5'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_5'
+bgidl = '1.058e009+nhv_bgidl_diff_5'
+cgidl = '4000+nhv_cgidl_diff_5'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_5'
+kt2 = -0.019151
+at = 70000
+ute = -1.1831
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.6 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.86603+nhv_vth0_diff_6'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_6'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '116860+nhv_vsat_diff_6'
+ua = '-1.498e-010+nhv_ua_diff_6'
+ub = '2.1238e-018+nhv_ub_diff_6'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_6'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_6'
+a0 = '1.1222+nhv_a0_diff_6'
+keta = '-0.01066+nhv_keta_diff_6'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_6'
+b0 = '3.2933e-008+nhv_b0_diff_6'
+b1 = '0+nhv_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_6' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_6' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_6'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_6'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_6'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_6'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_6'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_6'
+bgidl = '1.058e009+nhv_bgidl_diff_6'
+cgidl = '4000+nhv_cgidl_diff_6'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_6'
+kt2 = -0.019151
+at = 49600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.7 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.85003+nhv_vth0_diff_7'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_7'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '107600+nhv_vsat_diff_7'
+ua = '-1.498e-010+nhv_ua_diff_7'
+ub = '1.4679e-018+nhv_ub_diff_7'
+uc = 4.6343e-011
+rdsw = '724.62+nhv_rdsw_diff_7'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.041406+nhv_u0_diff_7'
+a0 = '1.1222+nhv_a0_diff_7'
+keta = '-0.01066+nhv_keta_diff_7'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_7'
+b0 = '3.2933e-008+nhv_b0_diff_7'
+b1 = '0+nhv_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_7' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_7' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_7'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_7'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0278+nhv_pclm_diff_7'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.8934e-005
+alpha1 = 0
+beta0 = 35.482
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_7'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_7'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_7'
+bgidl = '1.058e009+nhv_bgidl_diff_7'
+cgidl = '4000+nhv_cgidl_diff_7'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_7'
+kt2 = -0.019151
+at = 24000
+ute = -1.0908
+ua1 = 3.0044e-009
+ub1 = -3.3022e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.8 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_8'
+k1 = 0.88325
+k2 = '-0.015173+nhv_k2_diff_8'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '110000+nhv_vsat_diff_8'
+ua = '-1.498e-010+nhv_ua_diff_8'
+ub = '1.5853e-018+nhv_ub_diff_8'
+uc = 6.5807e-011
+rdsw = '724.62+nhv_rdsw_diff_8'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.040476+nhv_u0_diff_8'
+a0 = '1.1222+nhv_a0_diff_8'
+keta = '-0.021838+nhv_keta_diff_8'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_8'
+b0 = '3.2933e-008+nhv_b0_diff_8'
+b1 = '0+nhv_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_8' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_8' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_8'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_8'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0278+nhv_pclm_diff_8'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.5046e-005
+alpha1 = 0
+beta0 = 29.568
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_8'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_8'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_8'
+bgidl = '1.058e009+nhv_bgidl_diff_8'
+cgidl = '4000+nhv_cgidl_diff_8'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_8'
+kt2 = -0.019151
+at = 20000
+ute = -1.1687
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.9 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83003+nhv_vth0_diff_9'
+k1 = 0.88325
+k2 = '-0.025187+nhv_k2_diff_9'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '111900+nhv_vsat_diff_9'
+ua = '-1.498e-010+nhv_ua_diff_9'
+ub = '1.617e-018+nhv_ub_diff_9'
+uc = 5.2646e-011
+rdsw = '724.62+nhv_rdsw_diff_9'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.038857+nhv_u0_diff_9'
+a0 = '1.1222+nhv_a0_diff_9'
+keta = '-0.021838+nhv_keta_diff_9'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_9'
+b0 = '3.2933e-008+nhv_b0_diff_9'
+b1 = '0+nhv_b1_diff_9'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_9' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_9' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_9'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_9'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0278+nhv_pclm_diff_9'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.1701e-005
+alpha1 = 0
+beta0 = 28.09
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_9'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_9'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_9'
+bgidl = '1.058e009+nhv_bgidl_diff_9'
+cgidl = '4000+nhv_cgidl_diff_9'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_9'
+kt2 = -0.019151
+at = 40000
+ute = -1.1687
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.10 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83003+nhv_vth0_diff_10'
+k1 = 0.88325
+k2 = '-0.025187+nhv_k2_diff_10'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '111900+nhv_vsat_diff_10'
+ua = '-1.498e-010+nhv_ua_diff_10'
+ub = '1.6817e-018+nhv_ub_diff_10'
+uc = 5.2646e-011
+rdsw = '724.62+nhv_rdsw_diff_10'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.038857+nhv_u0_diff_10'
+a0 = '1.1222+nhv_a0_diff_10'
+keta = '-0.021838+nhv_keta_diff_10'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_10'
+b0 = '3.2933e-008+nhv_b0_diff_10'
+b1 = '0+nhv_b1_diff_10'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_10' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_10' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_10'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_10'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0278+nhv_pclm_diff_10'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 3.0815e-005
+alpha1 = 0
+beta0 = 26.966
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_10'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_10'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_10'
+bgidl = '1.058e009+nhv_bgidl_diff_10'
+cgidl = '4000+nhv_cgidl_diff_10'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39273+nhv_kt1_diff_10'
+kt2 = -0.019151
+at = 150000
+ute = -1.1687
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.11 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84603+nhv_vth0_diff_11'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_11'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '118860+nhv_vsat_diff_11'
+ua = '-1.498e-010+nhv_ua_diff_11'
+ub = '1.5291e-018+nhv_ub_diff_11'
+uc = 4.6343e-011
+rdsw = '724.62+nhv_rdsw_diff_11'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_11'
+a0 = '1.1222+nhv_a0_diff_11'
+keta = '-0.01066+nhv_keta_diff_11'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_11'
+b0 = '3.2933e-008+nhv_b0_diff_11'
+b1 = '0+nhv_b1_diff_11'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_11' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_11' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_11'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_11'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_11'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_11'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_11'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_11'
+bgidl = '1.058e009+nhv_bgidl_diff_11'
+cgidl = '4000+nhv_cgidl_diff_11'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_11'
+kt2 = -0.019151
+at = 40896
+ute = -1.1428
+ua1 = 3.0044e-009
+ub1 = -1.7594e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.12 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.86947+nhv_vth0_diff_12'
+k1 = 0.88325
+k2 = '-0.019258+nhv_k2_diff_12'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109350+nhv_vsat_diff_12'
+ua = '-1.498e-010+nhv_ua_diff_12'
+ub = '1.5291e-018+nhv_ub_diff_12'
+uc = 5.9319e-011
+rdsw = '724.62+nhv_rdsw_diff_12'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_12'
+a0 = '1.1222+nhv_a0_diff_12'
+keta = '-0.01066+nhv_keta_diff_12'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_12'
+b0 = '3.2933e-008+nhv_b0_diff_12'
+b1 = '0+nhv_b1_diff_12'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_12' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_12' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_12'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_12'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.7473+nhv_pclm_diff_12'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.9675e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_12'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_12'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_12'
+bgidl = '1.058e009+nhv_bgidl_diff_12'
+cgidl = '4000+nhv_cgidl_diff_12'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_12'
+kt2 = -0.019151
+at = 38400
+ute = -1.2991
+ua1 = 2.0117e-009
+ub1 = -1.8012e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.13 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_13'
+k1 = 0.88325
+k2 = '-0.015173+nhv_k2_diff_13'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '111900+nhv_vsat_diff_13'
+ua = '-1.498e-010+nhv_ua_diff_13'
+ub = '1.4679e-018+nhv_ub_diff_13'
+uc = 6.5807e-011
+rdsw = '724.62+nhv_rdsw_diff_13'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.042162+nhv_u0_diff_13'
+a0 = '1.1222+nhv_a0_diff_13'
+keta = '-0.01066+nhv_keta_diff_13'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_13'
+b0 = '3.2933e-008+nhv_b0_diff_13'
+b1 = '0+nhv_b1_diff_13'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_13' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_13' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_13'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_13'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0278+nhv_pclm_diff_13'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 3.2414e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_13'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_13'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_13'
+bgidl = '1.058e009+nhv_bgidl_diff_13'
+cgidl = '4000+nhv_cgidl_diff_13'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_13'
+kt2 = -0.019151
+at = 29000
+ute = -1.2471
+ua1 = 2.0117e-009
+ub1 = -1.8012e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.14 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.9995e-05 wmax = 2.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82603+nhv_vth0_diff_14'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_14'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '94207+nhv_vsat_diff_14'
+ua = '-1.498e-010+nhv_ua_diff_14'
+ub = '2.0388e-018+nhv_ub_diff_14'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_14'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_14'
+a0 = '0.74065+nhv_a0_diff_14'
+keta = '-0.027168+nhv_keta_diff_14'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_14'
+b0 = '3.2933e-008+nhv_b0_diff_14'
+b1 = '0+nhv_b1_diff_14'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_14' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_14' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_14'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_14'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.33405+nhv_pclm_diff_14'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 32.5
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_14'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_14'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_14'
+bgidl = '1.058e009+nhv_bgidl_diff_14'
+cgidl = '4000+nhv_cgidl_diff_14'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.36273+nhv_kt1_diff_14'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.4523e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.15 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.9995e-05 wmax = 2.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82603+nhv_vth0_diff_15'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_15'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '105660+nhv_vsat_diff_15'
+ua = '-1.498e-010+nhv_ua_diff_15'
+ub = '2.1238e-018+nhv_ub_diff_15'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_15'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_15'
+a0 = '1.1222+nhv_a0_diff_15'
+keta = '-0.01066+nhv_keta_diff_15'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_15'
+b0 = '3.2933e-008+nhv_b0_diff_15'
+b1 = '0+nhv_b1_diff_15'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_15' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_15' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_15'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_15'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_15'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_15'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_15'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_15'
+bgidl = '1.058e009+nhv_bgidl_diff_15'
+cgidl = '4000+nhv_cgidl_diff_15'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_15'
+kt2 = -0.019151
+at = 49600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.4025e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.16 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_16'
+k1 = 0.88325
+k2 = '-0.018091+nhv_k2_diff_16'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '101100+nhv_vsat_diff_16'
+ua = '-1.498e-010+nhv_ua_diff_16'
+ub = '1.8265e-018+nhv_ub_diff_16'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_16'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_16'
+a0 = '1.1222+nhv_a0_diff_16'
+keta = '-0.01066+nhv_keta_diff_16'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_16'
+b0 = '3.2933e-008+nhv_b0_diff_16'
+b1 = '0+nhv_b1_diff_16'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_16' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_16' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_16'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_16'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.89936+nhv_pclm_diff_16'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.8807e-005
+alpha1 = 0
+beta0 = 34.003
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_16'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_16'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_16'
+bgidl = '1.058e009+nhv_bgidl_diff_16'
+cgidl = '4000+nhv_cgidl_diff_16'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_16'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.4525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.17 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82603+nhv_vth0_diff_17'
+k1 = 0.88325
+k2 = '-0.018091+nhv_k2_diff_17'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '100100+nhv_vsat_diff_17'
+ua = '-1.498e-010+nhv_ua_diff_17'
+ub = '1.8265e-018+nhv_ub_diff_17'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_17'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.042006+nhv_u0_diff_17'
+a0 = '1.1222+nhv_a0_diff_17'
+keta = '-0.03033+nhv_keta_diff_17'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_17'
+b0 = '3.2933e-008+nhv_b0_diff_17'
+b1 = '0+nhv_b1_diff_17'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_17' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_17' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_17'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_17'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.89936+nhv_pclm_diff_17'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 29.9
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_17'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_17'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_17'
+bgidl = '1.058e009+nhv_bgidl_diff_17'
+cgidl = '4000+nhv_cgidl_diff_17'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_17'
+kt2 = -0.019151
+at = 10000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.18 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82603+nhv_vth0_diff_18'
+k1 = 0.88325
+k2 = '-0.018091+nhv_k2_diff_18'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '86056+nhv_vsat_diff_18'
+ua = '-1.498e-010+nhv_ua_diff_18'
+ub = '1.8265e-018+nhv_ub_diff_18'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_18'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.0414+nhv_u0_diff_18'
+a0 = '0.96509+nhv_a0_diff_18'
+keta = '-0.03033+nhv_keta_diff_18'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_18'
+b0 = '3.2933e-008+nhv_b0_diff_18'
+b1 = '0+nhv_b1_diff_18'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_18' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_18' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_18'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_18'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.89936+nhv_pclm_diff_18'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.3888e-005
+alpha1 = 0
+beta0 = 26.7
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_18'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_18'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_18'
+bgidl = '1.058e009+nhv_bgidl_diff_18'
+cgidl = '4000+nhv_cgidl_diff_18'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_18'
+kt2 = -0.019151
+at = 60000
+ute = -1.2586
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.19 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82603+nhv_vth0_diff_19'
+k1 = 0.88325
+k2 = '-0.018091+nhv_k2_diff_19'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '78024+nhv_vsat_diff_19'
+ua = '-1.498e-010+nhv_ua_diff_19'
+ub = '1.8265e-018+nhv_ub_diff_19'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_19'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.0414+nhv_u0_diff_19'
+a0 = '0.96509+nhv_a0_diff_19'
+keta = '-0.03033+nhv_keta_diff_19'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_19'
+b0 = '3.2933e-008+nhv_b0_diff_19'
+b1 = '0+nhv_b1_diff_19'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_19' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_19' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_19'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_19'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.89936+nhv_pclm_diff_19'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 23.8
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_19'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_19'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_19'
+bgidl = '1.058e009+nhv_bgidl_diff_19'
+cgidl = '4000+nhv_cgidl_diff_19'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.40273+nhv_kt1_diff_19'
+kt2 = -0.019151
+at = 113600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.20 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83803+nhv_vth0_diff_20'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_20'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '109890+nhv_vsat_diff_20'
+ua = '-1.498e-010+nhv_ua_diff_20'
+ub = '2.1238e-018+nhv_ub_diff_20'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_20'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_20'
+a0 = '1.1222+nhv_a0_diff_20'
+keta = '-0.01066+nhv_keta_diff_20'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_20'
+b0 = '3.2933e-008+nhv_b0_diff_20'
+b1 = '0+nhv_b1_diff_20'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_20' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_20' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_20'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_20'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_20'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_20'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_20'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_20'
+bgidl = '1.058e009+nhv_bgidl_diff_20'
+cgidl = '4000+nhv_cgidl_diff_20'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_20'
+kt2 = -0.019151
+at = 49600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.5525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.21 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84203+nhv_vth0_diff_21'
+k1 = 0.88325
+k2 = '-0.020425+nhv_k2_diff_21'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '105490+nhv_vsat_diff_21'
+ua = '-1.498e-010+nhv_ua_diff_21'
+ub = '1.8689e-018+nhv_ub_diff_21'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_21'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044006+nhv_u0_diff_21'
+a0 = '1.1222+nhv_a0_diff_21'
+keta = '-0.01066+nhv_keta_diff_21'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_21'
+b0 = '3.2933e-008+nhv_b0_diff_21'
+b1 = '0+nhv_b1_diff_21'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_21' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_21' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_21'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_21'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_21'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.8228e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_21'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_21'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_21'
+bgidl = '1.058e009+nhv_bgidl_diff_21'
+cgidl = '4000+nhv_cgidl_diff_21'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_21'
+kt2 = -0.019151
+at = 38400
+ute = -1.2991
+ua1 = 2.0117e-009
+ub1 = -1.513e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.22 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_22'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_22'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '97207+nhv_vsat_diff_22'
+ua = '-1.498e-010+nhv_ua_diff_22'
+ub = '1.8265e-018+nhv_ub_diff_22'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_22'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_22'
+a0 = '1.1222+nhv_a0_diff_22'
+keta = '-0.01066+nhv_keta_diff_22'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_22'
+b0 = '3.2933e-008+nhv_b0_diff_22'
+b1 = '0+nhv_b1_diff_22'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_22' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_22' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_22'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_22'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.89936+nhv_pclm_diff_22'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.8934e-005
+alpha1 = 0
+beta0 = 35.6
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_22'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_22'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_22'
+bgidl = '1.058e009+nhv_bgidl_diff_22'
+cgidl = '4000+nhv_cgidl_diff_22'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_22'
+kt2 = -0.019151
+at = 30000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.4525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.23 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82703+nhv_vth0_diff_23'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_23'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '103550+nhv_vsat_diff_23'
+ua = '3.3055e-011+nhv_ua_diff_23'
+ub = '1.7534e-018+nhv_ub_diff_23'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_23'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044934+nhv_u0_diff_23'
+a0 = '1.1222+nhv_a0_diff_23'
+keta = '-0.01066+nhv_keta_diff_23'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_23'
+b0 = '3.2933e-008+nhv_b0_diff_23'
+b1 = '0+nhv_b1_diff_23'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_23' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_23' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_23'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_23'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.2052+nhv_pclm_diff_23'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 29.568
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_23'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_23'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_23'
+bgidl = '1.058e009+nhv_bgidl_diff_23'
+cgidl = '4000+nhv_cgidl_diff_23'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_23'
+kt2 = -0.019151
+at = 20000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.24 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82903+nhv_vth0_diff_24'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_24'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '102820+nhv_vsat_diff_24'
+ua = '6.611e-011+nhv_ua_diff_24'
+ub = '1.8235e-018+nhv_ub_diff_24'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_24'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044934+nhv_u0_diff_24'
+a0 = '0.83043+nhv_a0_diff_24'
+keta = '-0.023051+nhv_keta_diff_24'
+a1 = 0
+a2 = 0.65972622
+ags = '0.14102+nhv_ags_diff_24'
+b0 = '3.2933e-008+nhv_b0_diff_24'
+b1 = '0+nhv_b1_diff_24'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_24' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_24' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_24'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_24'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.2052+nhv_pclm_diff_24'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.5624e-005
+alpha1 = 0
+beta0 = 26.611
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_24'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_24'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_24'
+bgidl = '1.058e009+nhv_bgidl_diff_24'
+cgidl = '4000+nhv_cgidl_diff_24'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_24'
+kt2 = -0.019151
+at = 80000
+ute = -1.2586
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.25 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.8206+nhv_vth0_diff_25'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_25'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '100190+nhv_vsat_diff_25'
+ua = '6.611e-011+nhv_ua_diff_25'
+ub = '1.8235e-018+nhv_ub_diff_25'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_25'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044934+nhv_u0_diff_25'
+a0 = '0.83043+nhv_a0_diff_25'
+keta = '-0.023051+nhv_keta_diff_25'
+a1 = 0
+a2 = 0.65972622
+ags = '0.13538+nhv_ags_diff_25'
+b0 = '3.2933e-008+nhv_b0_diff_25'
+b1 = '0+nhv_b1_diff_25'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_25' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_25' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_25'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_25'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.2052+nhv_pclm_diff_25'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.0706e-005
+alpha1 = 0
+beta0 = 22.915
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_25'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_25'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_25'
+bgidl = '1.058e009+nhv_bgidl_diff_25'
+cgidl = '4000+nhv_cgidl_diff_25'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.40273+nhv_kt1_diff_25'
+kt2 = -0.019151
+at = 152000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.26 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84303+nhv_vth0_diff_26'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_26'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108890+nhv_vsat_diff_26'
+ua = '-1.498e-010+nhv_ua_diff_26'
+ub = '2.1238e-018+nhv_ub_diff_26'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_26'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_26'
+a0 = '1.1222+nhv_a0_diff_26'
+keta = '-0.01066+nhv_keta_diff_26'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_26'
+b0 = '3.2933e-008+nhv_b0_diff_26'
+b1 = '0+nhv_b1_diff_26'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_26' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_26' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_26'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_26'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_26'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_26'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_26'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_26'
+bgidl = '1.058e009+nhv_bgidl_diff_26'
+cgidl = '4000+nhv_cgidl_diff_26'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_26'
+kt2 = -0.019151
+at = 49600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.5525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.27 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_27'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_27'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '105140+nhv_vsat_diff_27'
+ua = '-8.3888e-011+nhv_ua_diff_27'
+ub = '1.7534e-018+nhv_ub_diff_27'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_27'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044934+nhv_u0_diff_27'
+a0 = '1.1222+nhv_a0_diff_27'
+keta = '-0.01066+nhv_keta_diff_27'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_27'
+b0 = '3.2933e-008+nhv_b0_diff_27'
+b1 = '0+nhv_b1_diff_27'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_27' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_27' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_27'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_27'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.026+nhv_pclm_diff_27'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.765e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_27'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_27'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_27'
+bgidl = '1.058e009+nhv_bgidl_diff_27'
+cgidl = '4000+nhv_cgidl_diff_27'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_27'
+kt2 = -0.019151
+at = 38400
+ute = -1.2991
+ua1 = 2.0117e-009
+ub1 = -1.347e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.28 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84003+nhv_vth0_diff_28'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_28'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '101100+nhv_vsat_diff_28'
+ua = '-1.498e-010+nhv_ua_diff_28'
+ub = '1.7534e-018+nhv_ub_diff_28'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_28'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_28'
+a0 = '1.1222+nhv_a0_diff_28'
+keta = '-0.01066+nhv_keta_diff_28'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_28'
+b0 = '3.2933e-008+nhv_b0_diff_28'
+b1 = '0+nhv_b1_diff_28'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_28' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_28' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_28'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_28'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.82741+nhv_pclm_diff_28'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.0254e-005
+alpha1 = 0
+beta0 = 35.482
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_28'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_28'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_28'
+bgidl = '1.058e009+nhv_bgidl_diff_28'
+cgidl = '4000+nhv_cgidl_diff_28'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_28'
+kt2 = -0.019151
+at = 29000
+ute = -1.2471
+ua1 = 2.0117e-009
+ub1 = -1.257e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.29 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_29'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_29'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '101430+nhv_vsat_diff_29'
+ua = '-1.498e-010+nhv_ua_diff_29'
+ub = '2.0388e-018+nhv_ub_diff_29'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_29'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_29'
+a0 = '1.2569+nhv_a0_diff_29'
+keta = '-0.01066+nhv_keta_diff_29'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_29'
+b0 = '3.2933e-008+nhv_b0_diff_29'
+b1 = '0+nhv_b1_diff_29'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_29' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_29' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_29'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_29'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.71949+nhv_pclm_diff_29'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.331e-005
+alpha1 = 0
+beta0 = 32.8
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_29'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_29'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_29'
+bgidl = '1.058e009+nhv_bgidl_diff_29'
+cgidl = '4000+nhv_cgidl_diff_29'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_29'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.30 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82403+nhv_vth0_diff_30'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_30'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '108110+nhv_vsat_diff_30'
+ua = '-1.498e-010+nhv_ua_diff_30'
+ub = '2.1238e-018+nhv_ub_diff_30'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_30'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_30'
+a0 = '1.2569+nhv_a0_diff_30'
+keta = '-0.01066+nhv_keta_diff_30'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_30'
+b0 = '3.2933e-008+nhv_b0_diff_30'
+b1 = '0+nhv_b1_diff_30'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_30' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_30' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_30'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_30'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.20557+nhv_pclm_diff_30'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 29.568
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_30'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_30'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_30'
+bgidl = '1.058e009+nhv_bgidl_diff_30'
+cgidl = '4000+nhv_cgidl_diff_30'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_30'
+kt2 = -0.019151
+at = 16000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.31 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.82603+nhv_vth0_diff_31'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_31'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '100660+nhv_vsat_diff_31'
+ua = '-1.7976e-011+nhv_ua_diff_31'
+ub = '1.9964e-018+nhv_ub_diff_31'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_31'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_31'
+a0 = '0.85287+nhv_a0_diff_31'
+keta = '-0.025533+nhv_keta_diff_31'
+a1 = 0
+a2 = 0.65972622
+ags = '0.14102+nhv_ags_diff_31'
+b0 = '3.2933e-008+nhv_b0_diff_31'
+b1 = '0+nhv_b1_diff_31'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_31' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_31' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_31'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_31'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.41114+nhv_pclm_diff_31'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 26.6
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_31'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_31'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_31'
+bgidl = '1.058e009+nhv_bgidl_diff_31'
+cgidl = '4000+nhv_cgidl_diff_31'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_31'
+kt2 = -0.019151
+at = 80000
+ute = -1.2586
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.32 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.81703+nhv_vth0_diff_32'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_32'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '105660+nhv_vsat_diff_32'
+ua = '-6.2916e-011+nhv_ua_diff_32'
+ub = '2.0813e-018+nhv_ub_diff_32'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_32'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_32'
+a0 = '0.94535+nhv_a0_diff_32'
+keta = '-0.02132+nhv_keta_diff_32'
+a1 = 0
+a2 = 0.65972622
+ags = '0.14743+nhv_ags_diff_32'
+b0 = '3.2933e-008+nhv_b0_diff_32'
+b1 = '0+nhv_b1_diff_32'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_32' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_32' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_32'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_32'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.33405+nhv_pclm_diff_32'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 24
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_32'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_32'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_32'
+bgidl = '1.058e009+nhv_bgidl_diff_32'
+cgidl = '4000+nhv_cgidl_diff_32'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.40273+nhv_kt1_diff_32'
+kt2 = -0.019151
+at = 160000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.33 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_33'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_33'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '105660+nhv_vsat_diff_33'
+ua = '-1.498e-010+nhv_ua_diff_33'
+ub = '2.1238e-018+nhv_ub_diff_33'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_33'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_33'
+a0 = '1.1222+nhv_a0_diff_33'
+keta = '-0.01066+nhv_keta_diff_33'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_33'
+b0 = '3.2933e-008+nhv_b0_diff_33'
+b1 = '0+nhv_b1_diff_33'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_33' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_33' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_33'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_33'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_33'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_33'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_33'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_33'
+bgidl = '1.058e009+nhv_bgidl_diff_33'
+cgidl = '4000+nhv_cgidl_diff_33'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_33'
+kt2 = -0.019151
+at = 40000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.5525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.34 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_34'
+k1 = 0.88325
+k2 = '-0.029179+nhv_k2_diff_34'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '100430+nhv_vsat_diff_34'
+ua = '-1.498e-010+nhv_ua_diff_34'
+ub = '2.1238e-018+nhv_ub_diff_34'
+uc = 6.6204e-011
+rdsw = '724.62+nhv_rdsw_diff_34'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_34'
+a0 = '1.1222+nhv_a0_diff_34'
+keta = '-0.01066+nhv_keta_diff_34'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_34'
+b0 = '3.2933e-008+nhv_b0_diff_34'
+b1 = '0+nhv_b1_diff_34'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_34' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_34' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_34'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_34'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0278+nhv_pclm_diff_34'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.736e-005
+alpha1 = 0
+beta0 = 35.482
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_34'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_34'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_34'
+bgidl = '1.058e009+nhv_bgidl_diff_34'
+cgidl = '4000+nhv_cgidl_diff_34'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_34'
+kt2 = -0.019151
+at = 29000
+ute = -1.2471
+ua1 = 2.0117e-009
+ub1 = -1.447e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.35 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.844+nhv_vth0_diff_35'
+k1 = 0.88325
+k2 = '-0.016501+nhv_k2_diff_35'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '123750+nhv_vsat_diff_35'
+ua = '-7.49e-011+nhv_ua_diff_35'
+ub = '1.5903e-018+nhv_ub_diff_35'
+uc = 6.0802e-011
+rdsw = '724.62+nhv_rdsw_diff_35'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.048606+nhv_u0_diff_35'
+a0 = '1.1222+nhv_a0_diff_35'
+keta = '-0.01066+nhv_keta_diff_35'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_35'
+b0 = '3.2933e-008+nhv_b0_diff_35'
+b1 = '0+nhv_b1_diff_35'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_35' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_35' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_35'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_35'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1363+nhv_pclm_diff_35'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 32.525
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_35'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_35'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_35'
+bgidl = '1.058e009+nhv_bgidl_diff_35'
+cgidl = '4000+nhv_cgidl_diff_35'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_35'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.36 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.9995e-05 lmax = 2.0005e-05 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.835+nhv_vth0_diff_36'
+k1 = 0.88325
+k2 = '-0.031405+nhv_k2_diff_36'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '128700+nhv_vsat_diff_36'
+ua = '0+nhv_ua_diff_36'
+ub = '1.9579e-018+nhv_ub_diff_36'
+uc = 7.8119e-011
+rdsw = '724.62+nhv_rdsw_diff_36'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044796+nhv_u0_diff_36'
+a0 = '1.104+nhv_a0_diff_36'
+keta = '-0.01489+nhv_keta_diff_36'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_36'
+b0 = '3.2933e-008+nhv_b0_diff_36'
+b1 = '0+nhv_b1_diff_36'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_36' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_36' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_36'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_36'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.49997+nhv_pclm_diff_36'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 3.7422e-005
+alpha1 = 0
+beta0 = 24.268
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_36'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_36'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_36'
+bgidl = '1.058e009+nhv_bgidl_diff_36'
+cgidl = '4000+nhv_cgidl_diff_36'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.38773+nhv_kt1_diff_36'
+kt2 = -0.019151
+at = 260000
+ute = -1.0389
+ua1 = 3.0044e-009
+ub1 = -3.4523e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.37 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83+nhv_vth0_diff_37'
+k1 = 0.88325
+k2 = '-0.025742+nhv_k2_diff_37'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '120700+nhv_vsat_diff_37'
+ua = '-7.49e-011+nhv_ua_diff_37'
+ub = '1.8129e-018+nhv_ub_diff_37'
+uc = 6.0802e-011
+rdsw = '724.62+nhv_rdsw_diff_37'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.046662+nhv_u0_diff_37'
+a0 = '0.80798+nhv_a0_diff_37'
+keta = '-0.02068+nhv_keta_diff_37'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_37'
+b0 = '3.2933e-008+nhv_b0_diff_37'
+b1 = '0+nhv_b1_diff_37'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_37' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_37' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_37'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_37'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.49997+nhv_pclm_diff_37'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.5914e-005
+alpha1 = 0
+beta0 = 29.923
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_37'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_37'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_37'
+bgidl = '1.058e009+nhv_bgidl_diff_37'
+cgidl = '4000+nhv_cgidl_diff_37'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_37'
+kt2 = -0.019151
+at = 20000
+ute = -1.1687
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.38 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.838+nhv_vth0_diff_38'
+k1 = 0.88325
+k2 = '-0.031405+nhv_k2_diff_38'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '122700+nhv_vsat_diff_38'
+ua = '0+nhv_ua_diff_38'
+ub = '1.8129e-018+nhv_ub_diff_38'
+uc = 5.3506e-011
+rdsw = '724.62+nhv_rdsw_diff_38'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044796+nhv_u0_diff_38'
+a0 = '0.90494+nhv_a0_diff_38'
+keta = '-0.02068+nhv_keta_diff_38'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_38'
+b0 = '3.2933e-008+nhv_b0_diff_38'
+b1 = '0+nhv_b1_diff_38'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_38' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_38' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_38'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_38'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.49997+nhv_pclm_diff_38'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4641e-005
+alpha1 = 0
+beta0 = 26.332
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_38'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_38'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_38'
+bgidl = '1.058e009+nhv_bgidl_diff_38'
+cgidl = '4000+nhv_cgidl_diff_38'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_38'
+kt2 = -0.019151
+at = 80000
+ute = -1.1327
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.39 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.843+nhv_vth0_diff_39'
+k1 = 0.88325
+k2 = '-0.031405+nhv_k2_diff_39'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '128700+nhv_vsat_diff_39'
+ua = '0+nhv_ua_diff_39'
+ub = '1.9579e-018+nhv_ub_diff_39'
+uc = 7.8119e-011
+rdsw = '724.62+nhv_rdsw_diff_39'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044796+nhv_u0_diff_39'
+a0 = '0.90494+nhv_a0_diff_39'
+keta = '-0.01489+nhv_keta_diff_39'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_39'
+b0 = '3.2933e-008+nhv_b0_diff_39'
+b1 = '0+nhv_b1_diff_39'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_39' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_39' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_39'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_39'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.49997+nhv_pclm_diff_39'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.079e-005
+alpha1 = 0
+beta0 = 25.279
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_39'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_39'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_39'
+bgidl = '1.058e009+nhv_bgidl_diff_39'
+cgidl = '4000+nhv_cgidl_diff_39'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.40273+nhv_kt1_diff_39'
+kt2 = -0.019151
+at = 192000
+ute = -1.1168
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.40 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.804+nhv_vth0_diff_40'
+k1 = 0.88325
+k2 = '-0.013096+nhv_k2_diff_40'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '132070+nhv_vsat_diff_40'
+ua = '-1.498e-010+nhv_ua_diff_40'
+ub = '1.5903e-018+nhv_ub_diff_40'
+uc = 3.8001e-011
+rdsw = '724.62+nhv_rdsw_diff_40'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.048606+nhv_u0_diff_40'
+a0 = '1.1222+nhv_a0_diff_40'
+keta = '-0.01066+nhv_keta_diff_40'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_40'
+b0 = '3.2933e-008+nhv_b0_diff_40'
+b1 = '0+nhv_b1_diff_40'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_40' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_40' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_40'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_40'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.7216+nhv_pclm_diff_40'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_40'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_40'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_40'
+bgidl = '1.058e009+nhv_bgidl_diff_40'
+cgidl = '4000+nhv_cgidl_diff_40'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.33573+nhv_kt1_diff_40'
+kt2 = -0.019151
+at = 49600
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.41 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84464+nhv_vth0_diff_41'
+k1 = 0.88325
+k2 = '-0.0072604+nhv_k2_diff_41'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '125700+nhv_vsat_diff_41'
+ua = '-9.8868e-011+nhv_ua_diff_41'
+ub = '1.4758e-018+nhv_ub_diff_41'
+uc = 5.229e-011
+rdsw = '724.62+nhv_rdsw_diff_41'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.049906+nhv_u0_diff_41'
+a0 = '1.1222+nhv_a0_diff_41'
+keta = '-0.01066+nhv_keta_diff_41'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_41'
+b0 = '3.2933e-008+nhv_b0_diff_41'
+b1 = '0+nhv_b1_diff_41'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_41' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_41' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_41'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_41'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.5681+nhv_pclm_diff_41'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 9.8376e-006
+alpha1 = 0
+beta0 = 33.826
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_41'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_41'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_41'
+bgidl = '1.058e009+nhv_bgidl_diff_41'
+cgidl = '4000+nhv_cgidl_diff_41'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_41'
+kt2 = -0.019151
+at = 38400
+ute = -1.2991
+ua1 = 2.0117e-009
+ub1 = -1.8012e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.42 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.870+nhv_vth0_diff_42'
+k1 = 0.88325
+k2 = '-0.0072604+nhv_k2_diff_42'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '123750+nhv_vsat_diff_42'
+ua = '-9.8868e-011+nhv_ua_diff_42'
+ub = '1.2722e-018+nhv_ub_diff_42'
+uc = 5.229e-011
+rdsw = '724.62+nhv_rdsw_diff_42'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.048606+nhv_u0_diff_42'
+a0 = '1.1222+nhv_a0_diff_42'
+keta = '-0.01066+nhv_keta_diff_42'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_42'
+b0 = '3.2933e-008+nhv_b0_diff_42'
+b1 = '0+nhv_b1_diff_42'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_42' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_42' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_42'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_42'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1363+nhv_pclm_diff_42'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 9.8376e-006
+alpha1 = 0
+beta0 = 32.525
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_42'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_42'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_42'
+bgidl = '1.058e009+nhv_bgidl_diff_42'
+cgidl = '4000+nhv_cgidl_diff_42'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_42'
+kt2 = -0.019151
+at = 29000
+ute = -1.2471
+ua1 = 2.0117e-009
+ub1 = -1.8012e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.43 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_43'
+k1 = 0.88325
+k2 = '-0.019842+nhv_k2_diff_43'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '106500+nhv_vsat_diff_43'
+ua = '-1.498e-010+nhv_ua_diff_43'
+ub = '1.5291e-018+nhv_ub_diff_43'
+uc = 5.7002e-011
+rdsw = '724.62+nhv_rdsw_diff_43'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_43'
+a0 = '1.1222+nhv_a0_diff_43'
+keta = '-0.01066+nhv_keta_diff_43'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_43'
+b0 = '3.2933e-008+nhv_b0_diff_43'
+b1 = '0+nhv_b1_diff_43'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_43' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_43' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_43'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_43'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_43'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.8066e-005
+alpha1 = 0
+beta0 = 35.482
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_43'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_43'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_43'
+bgidl = '1.058e009+nhv_bgidl_diff_43'
+cgidl = '4000+nhv_cgidl_diff_43'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_43'
+kt2 = -0.019151
+at = 24000
+ute = -1.2986
+ua1 = 3.0044e-009
+ub1 = -3.4525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.44 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.85803+nhv_vth0_diff_44'
+k1 = 0.88325
+k2 = '-0.023414+nhv_k2_diff_44'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '111000+nhv_vsat_diff_44'
+ua = '-1.498e-010+nhv_ua_diff_44'
+ub = '1.6514e-018+nhv_ub_diff_44'
+uc = 5.7002e-011
+rdsw = '724.62+nhv_rdsw_diff_44'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.041478+nhv_u0_diff_44'
+a0 = '0.67332+nhv_a0_diff_44'
+keta = '-0.020254+nhv_keta_diff_44'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_44'
+b0 = '3.2933e-008+nhv_b0_diff_44'
+b1 = '0+nhv_b1_diff_44'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_44' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_44' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_44'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_44'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.20557+nhv_pclm_diff_44'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.8066e-005
+alpha1 = 0
+beta0 = 31.224
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_44'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_44'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_44'
+bgidl = '1.058e009+nhv_bgidl_diff_44'
+cgidl = '4000+nhv_cgidl_diff_44'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37273+nhv_kt1_diff_44'
+kt2 = -0.019151
+at = 20000
+ute = -1.1687
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.45 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope3/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_45'
+k1 = 0.88325
+k2 = '-0.023414+nhv_k2_diff_45'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '101000+nhv_vsat_diff_45'
+ua = '-1.498e-010+nhv_ua_diff_45'
+ub = '1.7175e-018+nhv_ub_diff_45'
+uc = 5.7002e-011
+rdsw = '724.62+nhv_rdsw_diff_45'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.039819+nhv_u0_diff_45'
+a0 = '0.80798+nhv_a0_diff_45'
+keta = '-0.020254+nhv_keta_diff_45'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_45'
+b0 = '3.2933e-008+nhv_b0_diff_45'
+b1 = '0+nhv_b1_diff_45'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_45' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_45' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_45'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_45'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.20557+nhv_pclm_diff_45'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 2.8066e-005
+alpha1 = 0
+beta0 = 28.726
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_45'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_45'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_45'
+bgidl = '1.058e009+nhv_bgidl_diff_45'
+cgidl = '4000+nhv_cgidl_diff_45'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.39073+nhv_kt1_diff_45'
+kt2 = -0.019151
+at = 60000
+ute = -1.1327
+ua1 = 3.0044e-009
+ub1 = -3.7525e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.46 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope1/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.84003+nhv_vth0_diff_46'
+k1 = 0.88325
+k2 = '-0.019842+nhv_k2_diff_46'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '121610+nhv_vsat_diff_46'
+ua = '-1.498e-010+nhv_ua_diff_46'
+ub = '1.5291e-018+nhv_ub_diff_46'
+uc = 3.8001e-011
+rdsw = '724.62+nhv_rdsw_diff_46'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.045006+nhv_u0_diff_46'
+a0 = '1.1222+nhv_a0_diff_46'
+keta = '-0.01066+nhv_keta_diff_46'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_46'
+b0 = '3.2933e-008+nhv_b0_diff_46'
+b1 = '0+nhv_b1_diff_46'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_46' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_46' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_46'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_46'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2848+nhv_pclm_diff_46'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.4467e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_46'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_46'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_46'
+bgidl = '1.058e009+nhv_bgidl_diff_46'
+cgidl = '4000+nhv_cgidl_diff_46'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.35073+nhv_kt1_diff_46'
+kt2 = -0.019151
+at = 40896
+ute = -1.1428
+ua1 = 3.0044e-009
+ub1 = -1.9993e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.47 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.83603+nhv_vth0_diff_47'
+k1 = 0.88325
+k2 = '-0.019842+nhv_k2_diff_47'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '116750+nhv_vsat_diff_47'
+ua = '-1.498e-010+nhv_ua_diff_47'
+ub = '1.5903e-018+nhv_ub_diff_47'
+uc = 6.0042e-011
+rdsw = '724.62+nhv_rdsw_diff_47'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.043206+nhv_u0_diff_47'
+a0 = '1.1222+nhv_a0_diff_47'
+keta = '-0.0044772+nhv_keta_diff_47'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_47'
+b0 = '3.2933e-008+nhv_b0_diff_47'
+b1 = '0+nhv_b1_diff_47'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_47' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_47' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_47'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_47'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1049+nhv_pclm_diff_47'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 3.2296e-005
+alpha1 = 0
+beta0 = 36.96
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_47'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_47'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_47'
+bgidl = '1.058e009+nhv_bgidl_diff_47'
+cgidl = '4000+nhv_cgidl_diff_47'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_47'
+kt2 = -0.019151
+at = 29000
+ute = -1.2471
+ua1 = 2.0117e-009
+ub1 = -1.8012e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model nhv.48 nmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.16e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '7.6507e-008+nhv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '2.1346e-008+nhv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.1292e-009
+dwb = -1.6944e-009
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0.0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.794
+rnoib = 0.38
+tnoia = 7.5e6
+tnoib = 7.2e6
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.16e-008*nhv_toxe_mult' dev/gauss = '1.16e-08*nhv_toxe_mult*(nhv_toxe_slope2/sqrt(E(*,l)*E(*,w)*E(*,m)))'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*nhv_rshn_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '0.85603+nhv_vth0_diff_48'
+k1 = 0.88325
+k2 = '-0.019842+nhv_k2_diff_48'
+k3 = -0.884
+dvt0 = 0
+dvt1 = 0.53
+dvt2 = -0.19251
+dvt0w = 0.16
+dvt1w = 6909100
+dvt2w = -0.036016
+w0 = 0
+k3b = 0.43
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 2.5e-008
+lpeb = -2.182e-007
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '123420+nhv_vsat_diff_48'
+ua = '-1.498e-010+nhv_ua_diff_48'
+ub = '1.7175e-018+nhv_ub_diff_48'
+uc = 6.4845e-011
+rdsw = '724.62+nhv_rdsw_diff_48'
+prwb = 0.05626
+prwg = 0.048
+wr = 1
+u0 = '0.044934+nhv_u0_diff_48'
+a0 = '1.1222+nhv_a0_diff_48'
+keta = '-0.0044772+nhv_keta_diff_48'
+a1 = 0
+a2 = 0.65972622
+ags = '0.16025+nhv_ags_diff_48'
+b0 = '3.2933e-008+nhv_b0_diff_48'
+b1 = '0+nhv_b1_diff_48'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.20613+nhv_voff_diff_48' dev/gauss = 'nhv_voff_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+nfactor = '0.5412+nhv_nfactor_diff_48' dev/gauss = 'nhv_nfactor_slope/sqrt(E(*,l)*E(*,w)*E(*,m))'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+nhv_tvoff_diff_48'
+cit = -0.0008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.032+nhv_eta0_diff_48'
+etab = -0.01932
+dsub = 0.504
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = -4.2579486e-007
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1049+nhv_pclm_diff_48'
+pdiblc1 = 0.21098
+pdiblc2 = 0.0002
+pdiblcb = -0.26831
+drout = 0.36075
+pscbe1 = 9.3731e+008
+pscbe2 = 1.68e-006
+pvag = 1.99
+delta = 0.0246
+alpha0 = 1.9378e-005
+alpha1 = 0
+beta0 = 36.6
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 10.125
+pdits = '0+nhv_pdits_diff_48'
+pditsl = 0
+pditsd = '0+nhv_pditsd_diff_48'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5.06e-011+nhv_agidl_diff_48'
+bgidl = '1.058e009+nhv_bgidl_diff_48'
+cgidl = '4000+nhv_cgidl_diff_48'
+egidl = 0.8
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 1
+bigbacc = 0
+cigbacc = 0
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.16e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.37073+nhv_kt1_diff_48'
+kt2 = -0.019151
+at = 38400
+ute = -1.2991
+ua1 = 2.0117e-009
+ub1 = -1.8012e-018
+uc1 = -5.9821e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 2.6e+41
+noib = 0.0
+noic = 0.0
+em = 4.1000000E+07
+af = 1
+ef = 0.89
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.0773
+jss = 0.000375
+jsws = 5.84e-11
+xtis = 0.76
+bvs = 12.636
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001344
+tpbsw = 0.00099005
+tpbswg = 0
+tcj = 0.00067434
+tcjsw = 0.0002493
+tcjswg = 0
+cgdo = '3.0674e-010*nhv_overlap_mult'
+cgso = '3.0674e-010*nhv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '5e-011*nhv_overlap_mult'
+cgdl = '5e-011*nhv_overlap_mult'
+cf = 0
+clc = 1e-007
+cle = 0.6
+dlc = '6.5995e-008+nhv_dlc_diff+nhv_dlc_rotweak'
+dwc = '0+nhv_dwc_diff'
+vfbcv = -1
+acde = 0.4176
+moin = 15
+noff = 4
+voffcv = -0.4104
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.0008512*nhv_ajunction_mult'
+mjs = 0.295
+pbs = 0.72468
+cjsws = '8.5204e-011*nhv_pjunction_mult'
+mjsws = 0.037586
+pbsws = 0.29067
+cjswgs = '5.4e-011*nhv_pjunction_mult'
+mjswgs = 0.78692
+pbswgs = 0.54958
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+nhv_wlod_diff'
+kvth0 = '0+nhv_kvth0_diff'
+lkvth0 = '0+nhv_lkvth0_diff'
+wkvth0 = '0+nhv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+nhv_ku0_diff'
+lku0 = '0+nhv_lku0_diff'
+wku0 = '0+nhv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+nhv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******