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* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran diode.rf diode -p -nndiode_lvt nlvt_diode_iv.pm nlvt_diode_cv.pm ndiode_lvt.mod
* Working Directory: /home/hai/models/s8/s8tee/models.3.1/nlowvt/rev_model/combined
* Time: Thu May 10 12:49:02 2007
* Rule File: diode.rf
* Output File: ndiode_lvt.mod
* Input Files:
* (1) nlvt_diode_iv.pm
* (2) nlvt_diode_cv.pm
*copyright, Cypress Semiconductor, 2001
*BSIM3.V3 Diode Model
.model ndiode_lvt d
+level = 3
*
*PARAMETERS TO MAKE MODEL INTO CADFLOW
*
+tlevc = 1
+scalm = 1e-6
+area = 1e12
*
*JUNCTION CAPACITANCE PARAMETERS
*
+cj = '0.001209*1e-12*nlowvt_ajunction_mult' $ farads/m^2
+mj = 0.42197
+pb = 0.7477 $ V
+cjsw = '3.6224e-011*1e-6*nlowvt_pjunction_mult' $ farads/m
+mjsw = 0.001
+php = 0.1 $ V
+cta = 0.000792 $ 1/C
+ctp = 1e-005 $ 1/C
+tpb = 0.0012287 $ V/C
+tphp = 0 $ V/C
*
*DIODE IV PARAMETERS
*
+js = 2.75e-015 $ A/m^2
+jsw = 6e-016 $ A/m
+n = 1.2928
+rs = 981 $ ohms (ohms/m^2 if area defined in netlist)
+ik = '1.3e-009/1e-12' $ A/m^2
+ikr = '0/1e-12' $ A/m^2
+vb = 11.9 $ V
+ibv = 0.00106 $ A
+trs = 0 $ 1/C
+eg = 1.05 $ eV
+xti = 2
+tref = 30 $ C
*
*DEFAULT PARAMETERS
*
+tcv = 0 $ 1/C
+gap1 = 0.000473 $ eV/C
+gap2 = 1110
+ttt1 = 0 $ 1/C
+ttt2 = 0 $ 1/C^2
+tm1 = 0 $ 1/C
+tm2 = 0 $ 1/C^2
+lm = 0 $ m
+lp = 0 $ m
+wm = 0 $ m
+wp = 0 $ m
+xm = 0 $ m
+xoi = 10000
+xom = 10000 $ Angstrom
+xp = 0 $ m
+xw = 0 $ m