| Layer / Design rule,CD,,space,,Comment | |
| MOSFET width,0.135,,,,FOMSE | |
| MOSFET width in standard cells,0.075,,,,FOMSESC | |
| Spacing of poly on field to diff,,,0.065,,PFDSE | |
| Spacing of poly on field to tap,,,0.005,,PFTSE | |
| Enclosure of tap by nwell for pwell res,,,0.22,,PTAP_NWL_SP | |
| Grid conversion rounding factor,,,0.005,,GRCF | |
| Licon enclosure rounding,,,0.02,,LICENCLR | |
| LI1CD add/drop,0.01,,0.04,, | |
| Huge metal X min. W and L,3,,,,HugeM | |
| Min Nsdm area ,0.265,,,,MinNsdmArea | |
| Min Psdm area,0.255,,,,MinPsdmArea | |
| Min N/Psdm hole area ,0.265,,,,MinNPsdmHole | |
| Large waffle size must be divisible by 4,7.2,,,,waffle_large | |
| P1M additional CD control,0.011,,,,P1MCDcontrol | |
| Li1 proximity correction,,,0.25,,LI1PROXSpace | |
| "Serif added to nwell convex corner (SXX-572, 573)",0.22,,,,NwellCvxSerif | |
| "Serif added to nwell concave corner (SXX-572, 573)",0.12,,,,NwellCveSerif | |
| NWM extension beyond nwell edge straddling de_nFet_source (for GSMC; QZM-133),0.075,,,,NvhvNwellExt | |
| Min enclosure of pad by pmm for Cu inductor (JNET-80) ,0,,,,padPMMEncInd | |
| Min enclosure of pmm by cu1m for Cu inductor (JNET-80) ,10.75,,,,pmmCu1mEncInd | |
| Min enclosure of pbo by cu1m per DECA 000348 Rev S,10,,,,pboCu1mEnc | |
| Min enclosure of pmm by pmm2 for radio flow in the die (JNET-80) ,13,,,,pmmPmm2EncInd | |
| Min enclosure of pmm by pmm2 inside frame,7.5,,,,pmmPmm2EncIndFrame | |
| Min space between pmm2 and Inductor.dg ,,,7.5,,pmm2IndSpc | |
| Min cu1m PD across full chip,0.35,,,,MinCU1Mpd | |
| Max cu1m PD across full chip,0.45,,,,MaxCU1Mpd | |
| Spacing between RDL and outer edge of seal ring,15,,,,RdlSealSpc | |
| Spacing between RDL and pmm2,6.16,,,,RdlPmm2Spc | |
| Enclosure of etest module in die by cpmm2,0,,,,EtestCpmm2Enc | |
| "Keepout of active, poly, li and metal to NSM (TCS-2253)",,,1,,NSMKeepout | |
| "3 um keepout of active, poly, li and metal to areaid.dt/areaid.ft (TCS-2253)",,,3,,NSMKeepout_3um | |
| pnp_emitter sizing (S8P GSMC flow),,,0.05,,PnpEmitterSzGSMC | |
| pnp_emitter sizing (other flows),,,0.03,,PnpEmitterSz | |
| MiM Capacitor aspect ration,20,,,,MiM_AR | |
| Min NCM space to be used to preserve NCM CL algorithm (avoid LVL error),,,1.27,,NCM_0LVL | |
| Min space of NCM between core and periphery due to existing layout restriction,,,0.96,,NcmCorePeriSP | |
| Multiplication factor,,,0.01,,S8LVconv | |
| Minimum scribe width,50,,,,scribew | |
| spacing of p-well outside deep n-well to deep n-well mask edge,,,0.12,,NWDNWENCL | |
| p-well in deep n-well to p-sub,,,1.2,,NWDNWOL | |
| Field oxide etchback after P1ME before implants,,,0.04,,WFDEL |