| Layer / Design rule,CD,,space,,Comment |
| MOSFET width,0.135,,,,FOMSE |
| MOSFET width in standard cells,0.075,,,,FOMSESC |
| Spacing of poly on field to diff,,,0.065,,PFDSE |
| Spacing of poly on field to tap,,,0.005,,PFTSE |
| Enclosure of tap by nwell for pwell res,,,0.22,,PTAP_NWL_SP |
| Grid conversion rounding factor,,,0.005,,GRCF |
| Licon enclosure rounding,,,0.02,,LICENCLR |
| LI1CD add/drop,0.01,,0.04,, |
| Huge metal X min. W and L,3,,,,HugeM |
| Min Nsdm area ,0.265,,,,MinNsdmArea |
| Min Psdm area,0.255,,,,MinPsdmArea |
| Min N/Psdm hole area ,0.265,,,,MinNPsdmHole |
| Large waffle size must be divisible by 4,7.2,,,,waffle_large |
| P1M additional CD control,0.011,,,,P1MCDcontrol |
| Li1 proximity correction,,,0.25,,LI1PROXSpace |
| "Serif added to nwell convex corner (SXX-572, 573)",0.22,,,,NwellCvxSerif |
| "Serif added to nwell concave corner (SXX-572, 573)",0.12,,,,NwellCveSerif |
| NWM extension beyond nwell edge straddling de_nFet_source (for GSMC; QZM-133),0.075,,,,NvhvNwellExt |
| Min enclosure of pad by pmm for Cu inductor (JNET-80) ,0,,,,padPMMEncInd |
| Min enclosure of pmm by cu1m for Cu inductor (JNET-80) ,10.75,,,,pmmCu1mEncInd |
| Min enclosure of pbo by cu1m per DECA 000348 Rev S,10,,,,pboCu1mEnc |
| Min enclosure of pmm by pmm2 for radio flow in the die (JNET-80) ,13,,,,pmmPmm2EncInd |
| Min enclosure of pmm by pmm2 inside frame,7.5,,,,pmmPmm2EncIndFrame |
| Min space between pmm2 and Inductor.dg ,,,7.5,,pmm2IndSpc |
| Min cu1m PD across full chip,0.35,,,,MinCU1Mpd |
| Max cu1m PD across full chip,0.45,,,,MaxCU1Mpd |
| Spacing between RDL and outer edge of seal ring,15,,,,RdlSealSpc |
| Spacing between RDL and pmm2,6.16,,,,RdlPmm2Spc |
| Enclosure of etest module in die by cpmm2,0,,,,EtestCpmm2Enc |
| "Keepout of active, poly, li and metal to NSM (TCS-2253)",,,1,,NSMKeepout |
| "3 um keepout of active, poly, li and metal to areaid.dt/areaid.ft (TCS-2253)",,,3,,NSMKeepout_3um |
| pnp_emitter sizing (S8P GSMC flow),,,0.05,,PnpEmitterSzGSMC |
| pnp_emitter sizing (other flows),,,0.03,,PnpEmitterSz |
| MiM Capacitor aspect ration,20,,,,MiM_AR |
| Min NCM space to be used to preserve NCM CL algorithm (avoid LVL error),,,1.27,,NCM_0LVL |
| Min space of NCM between core and periphery due to existing layout restriction,,,0.96,,NcmCorePeriSP |
| Multiplication factor,,,0.01,,S8LVconv |
| Minimum scribe width,50,,,,scribew |
| spacing of p-well outside deep n-well to deep n-well mask edge,,,0.12,,NWDNWENCL |
| p-well in deep n-well to p-sub,,,1.2,,NWDNWOL |
| Field oxide etchback after P1ME before implants,,,0.04,,WFDEL |
