| NMOS ESD FET |
| ------------ |
| |
| Spice Model Information |
| ~~~~~~~~~~~~~~~~~~~~~~~ |
| |
| - Cell Name: :cell:`sky130_fd_pr__nfet_01v8` |
| - Model Name: :model:`sky130_fd_pr__esd_nfet_01v8`, :model:`sky130_fd_pr__esd_nfet_g5v0d10v5`, :model:`sky130_fd_pr__esd_nfet_g5v0d10v5_nvt` |
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| Operating Voltages where SPICE models are valid |
| |
| - V\ :sub:`DS` = 0 to 11.0V (:model:`sky130_fd_pr__nfet_g5v0d10v5*`), 0 to 1.95V (:model:`sky130_fd_pr__nfet_01v8*`) |
| - V\ :sub:`GS` = 0 to 5.0V (:model:`sky130_fd_pr__nfet_g5v0d10v5*`), 0 to 1.95V (:model:`sky130_fd_pr__nfet_01v8*`) |
| - V\ :sub:`BS` = 0 to -5.5V, (:model:`sky130_fd_pr__nfet_g5v0d10v5`), +0.3 to -5.5V (:model:`sky130_fd_pr__nfet_05v0_nvt`), 0 to -1.95V (:model:`sky130_fd_pr__nfet_01v8*`) |
| |
| Details |
| ~~~~~~~ |
| |
| The ESD FET’s differ from the regular NMOS devices in several aspects, most notably: |
| |
| - Increased isolation spacing from contacts to surrounding STI |
| - Increased drain contact-to-gate spacing |
| - Placement of n-well under the drain contacts |
| |
| Major model output parameters are shown below and compared against the EDR (e-test) specs |
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| .. include:: esd_nfet-table0.rst |
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| The symbols of the :model:`sky130_fd_pr__esd_nfet_g5v0d10v5` and :model:`sky130_fd_pr__esd_nfet_g5v0d10v5_nvt` (ESD NMOS FET) are shown below: |
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| |symbol-esd_nfet_g5v0d10v5| |symbol-esd_nfet_g5v0d10v5_nvt| |
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| The cross-section of the ESD NMOS FET is shown below. |
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| |cross-section-esd_nfet| |
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| .. |symbol-esd_nfet_g5v0d10v5| image:: symbol-esd_nfet_g5v0d10v5.svg |
| .. |symbol-esd_nfet_g5v0d10v5_nvt| image:: symbol-esd_nfet_g5v0d10v5_nvt.svg |
| .. |cross-section-esd_nfet| image:: cross-section-esd_nfet.svg |
| |
