| // This rule is created at Fri Aug 18 13:52:40 2017 |
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| ////////////////////////////////////////////////////////////////////////////////////////////////////// |
| // ----------------------------------------------------------------------------------------------- // |
| // | GLOBALFOUNDRIES | // |
| // | COMPANY CONFIDENTIAL | // |
| // ------------------------------------------------------------------------------------------------ // |
| // | N O T I C E | // |
| // | This Document contains information of a proprietary nature and is delivered on the express | // |
| // | condition that it is not to be disclosed or reproduced in whole or in part without the | // |
| // | written consent of GLOBALFOUNDRIES. | // |
| // | | // |
| // | This restriction does not limit the right to disclose information obtained from other | // |
| // | sources. | // |
| // ------------------------------------------------------------------------------------------------ // |
| ////////////////////////////////////////////////////////////////////////////////////////////////////// |
| // ***************************************************************************************************** |
| // * |
| // * Rules NOT Included in this Rule Files: (Refer to this spec only) |
| // * ------------------------------------------------------------------------------------------------ |
| // * LDP.14 - Other unlisted layer and rule, Poly2, Contact, Metal, Via, shall follow 3.3V Rule (YI-093-DR001) |
| // * LDP.18b - Each DVNWELL shall be directly surrounded by PCOMP guard ring tied to the P-substrate potential |
| // * LDP.18c - DVNWELL guard ring shall have NCOMP tab to be connected to highest potential |
| // * LDP.18d - DVNWELL guard ring length shall be bigger than the width of "HVPDDD inside DVNWELL" and NCOMP |
| // * LDN.14 - Others unlisted layer and rule like, Poly2, Contact, Metal, Via, shall follow 3.3V Rule (YI-093-DR001) |
| // * PDDD.6 - HVPDDD used as a resistor should be covered by RES_MK |
| // * NDDD.7 - HVNDDD used as a resistor should be covered by RES_MK |
| // * SK.12 - Schottky diode layer can exit both in LV and MV area |
| // * G.SK.30 - Use multi finger devices to have lower forward series resistance |
| // * G.SK.31 - Fill whole anode and cathode COMP area with maximum number of contacts to minimize series resistance. |
| // * G.SK.32 - Maximize metal width for anode and cathode connections. |
| // * HPD.3b - HVPDDD layer is not allowed to be used as well tap purpose |
| // * HND.3b - HVNDDD layer are not allowed to be used as well tap purpose |
| // * |
| // * KNOWN LIMITATIONS |
| // * ----------------- |
| // * LDP.3d, LDP.4 and LDN.5d cannot check the number of CONTACT used on the guardring and taps. Please use |
| // * maximum number of contact under metal for better manufacturability and reliability |
| // * |
| // ********************************************************************************************************** |
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