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| Physical Specifications | |
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| Process Scheme (#Poly/#Metal) 1P1M | |
| Device Type 5V NMOS & 5V PMOS | |
| Drawn Gate Length PMOS/NMOS(um) 0.50/0.60 | |
| Layer of Poly 1 | |
| Well Option Outside DNWELL | |
| Layer Grid (um) 0.005 | |
| Tracks per Cell 9 | |
| Cell Height (um) 5.04 | |
| Vertical/Horizontal Pin Grid (um) 0.56 | |
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