| 4.3 Mask Layer Numbering |
| =========================================== |
| |
| The following table matches the mask or reticle layer numbers to the drawn and generated layers |
| |
| |
| .. csv-table:: Drawn layers |
| :file: tables_clear/4.3_mask_layer_numbering.csv |
| :widths: 100, 200, 400, 100, 100,100 |
| |
| |
| .. note:: |
| |
| 1. PIB data polarity is chrome for mask used in FAB2. PIB data polarity is clear for mask used in |
| FAB6. |
| |
| 2. These layers are used for analog process. |
| |
| 3. These layers are reserved for future usage. |
| |
| 4. This layer L54 is used for Thin gate VT implant mask if thin gate native VT transistors are |
| required (If Thin gate Native VT NMOS is used then L61 can not be used for VT implant as it is |
| used for LDD). If thin gate native VT is not required then L61 can be used both for VT and LDD |
| implant. |
| |
| 5. Pad layer used both for bond pad and metal fuse open. |
| |
| 6. The layer L6C is used for 3.3V gate VT implant mask if 3.3V native VT transistors are required (If |
| 3.3V Native VT NMOS is used then L62 cannot be used for VT implant as it is used for LDD). If |
| 3.3V native VT is not required then L62 can be used both for VT and LDD implant |