| RULE NO., DESCRIPTION ,LAYOUT RULE |
| Layer ,ESD --- ESD Implant, |
| ESD.1 ,Min. ESD width ,0.60 |
| ESD.2 ,"Min. ESD space |
| (Merge if the space is less than 0.6um)",0.60 |
| ESD.3a ,Min. ESD space to NCOMP ,0.60 |
| ESD.3b ,Min/max space to a butted PCOMP ,0.00 |
| ESD.4a ,Min. ESD extend beyond NCOMP ,0.24 |
| ESD.4b ,Min. ESD overlap NCOMP ,0.45 |
| ESD.5a ,Min. ESD area ,0.49 μm2 |
| ESD.5b ,Min. ESD hole ,0.49 μm2 |
| ESD.6 ,Min. ESD extend beyond Poly2 ,0.45 |
| ESD.7 ,No ESD implant inside PCOMP |
| ESD.8 ,Min. ESD space to Nplus/Pplus ,0.30 |
| ESD.PL, Min. gate length of MV gate NMOS* ,0.80 |
| ESD.9 ,"ESD implant layer must be enclosed by DV2_D layer (as |
| ESD implant option is only for MV devices)", |
| ESD.10 ,"LVS_IO shall be drawn covering I/O MOS active area by |
| minimum enclosure except under ESD_HBM_MK layer",0 |