RULE NO.,DESCRIPTION,LAYOUT RULE | |
MSLOT.1,Maximum metal width without slotting,30 | |
MSLOT.2,Minimum slot width(slot mark layers) ,2 | |
MSLOT.3,"Slot length(slot mark layers) | |
a. Minimum | |
b. Maximum"," | |
10 | |
250" | |
MSLOT.3,"Slot Space(slot mark layers) | |
a. Minimum | |
b. Maximum"," | |
10 | |
30" | |
MSLOT.5,Minimum slot (slot mark layers) to metal edge spacing,10 | |
MSLOT.6,For multiple slots that spans the metal width, slots should be staggered. | |
MSLOT.7,Minimum space from via-n to metal-n slot ,0.2 | |
MSLOT.8,Minimum space from via-(n-1) / contact to metal-n slot ,0.2 | |
MSLOT.9,NO slotting allowed for the following cases:, | |
," | |
(a) Top Metal or METAL_SHIELD area directly under the Pad | |
(b) MIM bottom plate directly under FuseTop (For MIM option-A process). | |
MIM bottom plate directly under FuseTop (For MIM option-B process). | |
Bottom plate directly under FuseTop (For TaN resistor option-A process). | |
Bottom plate directly under TANRES (For TaN resistor option-B | |
process). | |
(c) Without metal shielding, Top Metal1 directly under FuseWindow_D | |
With metal shielding, Top Metal1 and Top Metal-12 directly under | |
FuseWindow_D | |
(d) Metal3 slots are not allowed to interact with via2 in FuseTop area (For | |
MIM option-A process). | |
MetalTop slots are not allowed to interact with top via in FuseTop area | |
(For MIM option-B process). | |
Metaln slots are not allowed to interact with Vian-1 in FuseTop area (For | |
TaN resistor option-A process). | |
METAL_SHIELD slot is not allowed to interact with | |
METAL_SHIELD_VIA in TANRES area (For TaN resistor option-B | |
process).", | |
,"(e) Top Metal or METAL_SHIELD area directly under UMB layers (except | |
for UMB used for WLP cu_PPI process) | |
Minimum distance to these layers ",5.0 | |
MSLOT.10,"slot mark layer on the metal hole (same metal level | |
e.g. Metal1_Slot on the Metal1 hole) are not allowed", |