| 4.2 Global Statistical Modeling Results |
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| To verify the model, Monte Carlo simulations were run and the output was compared with the measured data. |
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| The verification plots below compare the NMOS data with the PMOS data (except for native devices). This plot captures 3 pieces of information: the variance of the NMOS data, the variance of the PMOS data, and the covariance of the NMOS data vs. the PMOS data. |
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| The number of runs for each model type is 500 runs. In normal usage though, such a large number of runs is not necessary. 100 to 200 runs would be a typical number. Certainly, for a large circuit, it may not be feasible to make a large number of Monte Carlo simulations. The following plots compare the measurement results and the simulation results. Results shown are for fet_mc_skew = 3. |
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| 4.2.1 Isolated 10V LDMOS Process MC |
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| .. image:: images/3_monte_carlo2.png |
| :width: 600 |
| :align: center |
| :alt: 10V LDMOS Vtlin global distribution |
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| .. image:: images/3_monte_carlo3.png |
| :width: 600 |
| :align: center |
| :alt: 10V LDMOS Idsat global distribution |
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