| RULE NO.,DESCRIPTION,RULE |
| HVNESD.1,"HV NMOSFET used for ESD protection should be enclosured |
| |
| by ESD_MK, ESD_MK must enclose well pick-up implant",0 |
| HVNESD.2*,"Poly Channel-length for each finger in multi-finger |
| |
| transistors must be same", |
| G_HVNESD.3,Min. channel length for each finger (Recommended),0.8 |
| G.HVNESD.4 (a)**,Recommended finger width for each finger,25 |
| HVNESD.4 (b),Min. finger width for each finger,20 |
| HVNESD.4 (c),Max. finger width for each finger,60 |
| G.HVNESD.5(a)**,"Recommended number of fingers share one pick-up ring in |
| |
| multi-finger transistors.",12 |
| HVNESD.5 (b),"Max. number of fingers share one pick-up ring in multi- |
| |
| finger transistors",18 |
| G.HVNESD.6 (a)**,Recommended total finger width,300 |
| HVNESD.6(b),Min. total finger width,200 |
| HVNESD.6(c),Max. total finger width,720 |
| HVNESD.7,"SAB should cover drain and source and overlap gate or |
| |
| cover drain only with rule HVNESD.7(a) partly overlap poly Gate", |
| HVNESD.7(a),Min/max SAB overlap Poly gate,0.05 |
| G.HVNESD.8 (a)**,"Recommended at least one or nearest drain contact to gate |
| |
| edge space (DCGS)",4 |
| HVNESD.8 (b),Min. drain contact to gate edge space (DCGS),1 |
| HVNESD.8 (c),"Max. at least one or nearest drain contact to gate edge space (DCGS)",4 |
| G_HVNESD.10,"Recommended well tap COMP to active COMP space in |
| |
| channel length direction.",1.5 |
| HVNESD.11,Source COMP must enclose by LVS_Source,0 |
| HVNESD.12,LVS_Source must butt to Poly edge,0 |
| G.HVNESD.13**,"Recommended at least one or nearest source contact to |
| |
| gate edge space (SCGS) when SAB cover drain-source over poly gate",0.5 |
| HVNESD.13 (a),"Min. source contact to gate edge space (SCGS) when SAB |
| |
| cover drain-source over poly gate",0.15 |
| HVNESD.13(b),"Max. at least one or nearest source contact to gate edge |
| |
| space (SCGS) when SAB cover drain-source over poly gate",1 |
| COHVNESD.7,"Recommended/max. salicided block edge to at least one |
| |
| or nearest contact (CA)",0.22 |
| COHVNESD.7(a),Min. salicided block edge to contact (CA),0.15 |
