14.5.1 ESD Performance from 3.3V NMOS transistor | |
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ESD Performance from 3.3V NMOS transistor is summarized in following table. The TLP data for 3.3V grounded gate NMOS without ESD implant is showed in below. | |
.. csv-table:: | |
:file: tables_clear/60_ESD_Performance_174.csv | |
:widths: 400, 300 | |
:align: center | |
.. image:: images/ESD_Characterization1.png | |
:width: 600 | |
:align: center | |
:alt: 3.3V GGNMOS TLP IV Characteristics | |