docs/physical_verification/design_manual/drm_10_12_1.rst

10.12.1 10V LDNMOS rules
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This is to define N type asymmetrical 10V LDMOS device (LDNMOS). Below is a summary table as how to identify the device. All this kind of device's well share the same potential with P-substrate.

.. csv-table:: High Voltage LDMOS
    :file: tables_clear/43_LDNMOS_112_1.csv
    :widths: 100, 800
    :align: center

.. csv-table:: LDMOS RULES
    :file: tables_clear/43_LDNMOS_112_2.csv
    :widths: 100, 800, 150
    :align: center

.. image:: images/LDMOS1.png
    :width: 600
    :align: center
    :alt: LDMOS

.. image:: images/LDMOS2.png
    :width: 600
    :align: center
    :alt: LDMOS

.. image:: images/LDMOS3.png
    :width: 600
    :align: center
    :alt: LDMOS

.. image:: images/LDMOS4.png
    :width: 600
    :align: center
    :alt: LDMOS

Rule MDN.13d when each LDNMOS transistor has full width butting to well tap

.. image:: images/LDMOS5.png
    :width: 600
    :align: center
    :alt: MDN.13d

In below example, not every transistor has full width butting to well tap, it violate rule MDN.13d

.. image:: images/LDMOS6.png
    :width: 600
    :align: center
    :alt: MDN.13d