| 14.4.1 Design Guidelines for 3.3V LV SAB MOSFET Device |
| =============================================================== |
| |
| When using LV MOSFET (NMOS/PMOS) for ESD protection devices, it shall be marked by ESD_MK mark layer. The following layout guidelines are recommended. |
| |
| .. csv-table:: 3.3V LV SAB MOSFET Device Rules |
| :file: tables_clear/57_LV_SAB_MOSFET_163.csv |
| :widths: 300, 800, 200 |
| :align: center |
| |
| .. note:: |
| |
| \* :ref:`Rules not coded` |
| |
| \*\* Recommended rules , default OFF. |
| |
| .. image:: images/LV_SAB1.png |
| :width: 600 |
| :align: center |
| :alt: 3.3V LV SAB MOSFET Device |
| |
