| RULE NO.,DESCRIPTION,RULE |
| LVESD.1,"LV MOSFET used for ESD protection should be enclosured |
| |
| by ESD_MK, ESD_MK must enclose well pick-up implant",0 |
| LVESD.2*,"Poly Channel-length for each finger in multi-finger transistors |
| |
| must be same", |
| LVESD.3 (a),Min. channel length for each finger (Recommended),0.3 |
| LVESD.3 (b),Max. channel length for each finger,0.5 |
| G.LVESD.4 (a)**,Recommended finger width for each finger,25 |
| LVESD.4 (b),Min. finger width for each finger,20 |
| LVESD.4 (c),Max. finger width for each finger,60 |
| G.LVESD.5 (a)**,"Recommended number of fingers share one pick-up ring in |
| |
| multi-finger transistors.",8 |
| LVESD.5 (b),"Max. number of fingers share one pick-up ring in multi-finger |
| |
| Transistors",16 |
| G.LVESD.6 (a)**,Recommended total finger width,200 |
| LVESD.6 (b),Min. total finger width,160 |
| LVESD.6 (c),Max. total finger width,720 |
| LVESD.7,"SAB should cover drain and source and overlap gate or cover |
| |
| drain only with rule LVESD.7(a) partly overlap poly gate", |
| LVESD.7 (a),Min/max SAB overlap Poly gate,0.05 |
| G.LVESD.8 (a)**,"Recommeded at least one or nearest drain contact to gate edge space (DCGS)",2 |
| LVESD.8 (b),Min. drain contact to gate edge space (DCGS),1 |
| LVESD.8 (c),"Max. of at least one or nearest drain contact to gate edge space (DCGS)",4 |
| G_LVESD.10,"Recommended well tap COMP to active COMP space in |
| |
| channel length direction.",2 |
| LVESD.11,Source COMP must enclose by LVS_Source,0 |
| LVESD.12,LVS_Source must butt to Poly edge,0 |
| G.LVESD.13**,"Recommended at least one or nearest source contact to gate |
| |
| edge space (SCGS) when SAB cover drain-source over poly gate",0.7 |
| LVESD.13(a),"Min. source contact to gate edge space (SCGS) when SAB |
| |
| cover drain-source over poly gate",0.15 |
| LVESD.13(b),"Max. of at least one or nearest source contact to gate edge |
| |
| space (SCGS) when SAB cover drain-source over poly gate",1 |
| COLVESD.7,"Recommended/max. salicided block edge to at least one |
| |
| or nearest contact (CA)",0.22 |
| COLVESD.7(a),Min. salicided block edge to contact (CA),0.15 |
