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RULE NO.,DESCRIPTION,LV,MV,Comment
IO.0,"To flag I/O latch-up related violation:
i. Non well tap COMP directly connected to PAD is
recommended to be marked by “Latchup_MK” layer.",-,-,Guidelines
,"(b) Min/max Latchup_MK layer overlap of COMP (directly
connected to Pad)",0,0,Guidelines
,FOR LV and MV,,,
IO.1,"(a1) NCOMP in PSub directly connected to I/O pad must be
surrounded by Psub tap inside the Psub without any PCOMP in
NWELL in between (Exclude the case when each NMOS
transistor have full width butting to well tap).",,,
,"(a2) It should also be directly surrounded by an Nwell guard ring
(Non broken NCOMP ring inside Nwelll). Nwell guard ring shall
be connected to the most positive supply. Max space of Nwell
guard ring to the NCOMP in Psub directly connected to I/O pad.",15,15,Rule
,"(b) Within 15um from the edge of the NCOMP connected to I/O
pad (marked by Latchup_MK): Max Nwell tap distance to
PCOMP inside Nwell (irrespective of its direct connection to Pad)",2,2,Rule
IO.2,"Minimum recommended Nwell guard ring width:
(Maximize contact to guard uniformly. As a guideline, ratio of
total contact area to the active area of the guard ring should be
more than 5%).",2,2,Rule