| 3.0 Diode Models |
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| 3.1 Model description and limitation |
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| Temperature characteristics are measured form -40 to 125 C for IV and CV it is taken @ 25C and 125C.The diodes are modeled with Level 3 diode model. The forward bias behavior and the reverse breakdown behavior are modeled for different temperatures. |
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| Schottky Diode Breakdown Temperature dependence is not modelled. |
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| .. csv-table:: |
| :file: tables_clear/23_Diode_Models.csv |
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| 3.2 Model vs EP Nominal Target |
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| .. csv-table:: |
| :file: tables_clear/24_EP_Nominal.csv |
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| **Bias Conditions:** |
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| - Von: @Forward current=1uA/um^2 |
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| - Reverse Breakdown: @Reverse current =10uA/um^2 |
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| - Reverse Leakage current: @Reverse voltage=6.6V |
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| 3.3 How to Use the Models |
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| 3.3.1 For NGSPICE Users |
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| **To be added** |
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| 3.3.2 For XYCE Users |
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| **To be added** |
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