| Rev.,Description of Changes |
| 1A,"New release of IA specification for 0.18um 3.3/6V high voltage CMOS |
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| technology. It includes following process options with 6KA or 9KA Top Metal |
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| (TM) layers and options with MIM capacitors |
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| 1. 1P6M (with/without MIM, 6KA/9KA TM)" |
| 1B,"Add 1P3M,1P4M and 1P5M options: |
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| 1. 1P3M (with/without MIM, 6KA/9KA TM) |
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| 2. 1P4M (with/without MIM, 6KA/9KA TM) |
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| 3. 1P5M (with/without MIM, 6KA/9KA TM) |
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| " |
| 1C,"Add MIN Option B (“Top metal” & “Top metal-1”) for 1P3M,1P4M, |
| 1P5M and 1P6M : |
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| 1. 1P3M (with/without MIM, 6KA/9KA TM) |
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| 2. 1P4M (with/without MIM, 6KA/9KA TM) |
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| 3. 1P5M (with/without MIM, 6KA/9KA TM) |
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| 4. 1P6M (with/without MIM, 6KA/9KA TM)" |
| 6,"File header to new logo and number YI-141-IA055-01 from YI-141-IA055 |
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| Section 2 add notes on 30KA TM option |
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| Section 3.1&3.2 add 30KA TM option |
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| Section 4.23~4.33 add 30KA TM structure |
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| Section 5. Sheet Rho table, add 30KA TM" |
| 7,"Section 2 add notes on 11KA TM option |
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| Section 3.1&3.2 add 11KA TM option |
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| Section 4.34~4.44 add 11KA TM structure |
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| Section 5. Sheet Rho table, add 11KA TM" |
| 8,Section 4.45 Add 2 layers for 30k TM |
