| RULE NO.,DESCRIPTION,LAYOUT RULE |
| Layer,ESD = ESD Implant, |
| ESD.1,Minimum width of an ESD implant area,0.6 |
| ESD.2,"Minimum space between two ESD implant areas |
| |
| (Merge if the space is less than 0.6um)",0.6 |
| ESD.3a,Minimum space to NCOMP,0.6 |
| ESD.3b,Min/max space to a butted PCOMP,0 |
| ESD.4a,Extension beyond NCOMP,0.24 |
| ESD.4b,Minimum overlap of an ESD implant edge to a COMP,0.45 |
| ESD.5a,Minimum ESD area,0.49 μm2 |
| ESD.5b,Minimum field area enclosed by ESD implant,0.49 μm2 |
| ESD.6,Extension perpendicular to Poly2 gate,0.45 |
| ESD.7,No ESD implant inside PCOMP, |
| ESD.8,Minimum space to Nplus/Pplus,0.3 |
| ESD.PL,Minimum gate length of 5V/6V gate NMOS,0.8 |
| ESD.9,ESD implant layer must be overlapped by Dualgate layer (as ESD implant option is only for 5V/6V devices), |
| ESD.10,LVS_IO shall be drawn covering I/O MOS active area by minimum overlap,0 |