Modified the magic tech file for gf180mcu to use the GDS layer
23:5 as an isolated substrate marker (isosub). This layer is not
documented (that I could find), but that is clearly what it is
being used for.
diff --git a/gf180mcu/magic/gf180mcu.tech b/gf180mcu/magic/gf180mcu.tech
index aff87bb..0b34391 100644
--- a/gf180mcu/magic/gf180mcu.tech
+++ b/gf180mcu/magic/gf180mcu.tech
@@ -675,6 +675,12 @@
calma 12 0
#-----------------------------------------------------
+# SUBCUT
+#-----------------------------------------------------
+ layer SUBCUT isosub
+ calma 23 5
+
+#-----------------------------------------------------
# NWELL
#-----------------------------------------------------
layer NWELL allnwell
@@ -1595,6 +1601,9 @@
layer dnwell DNWELL
labels DNWELL
+ layer isosub SUBCUT
+ labels SUBCUT
+
templayer ndiffarea DIFF
and-not POLY
and-not NWELL
@@ -2622,6 +2631,7 @@
calma NWELLTXT 21 10
calma PWELL 204 0
calma PWELLTXT 204 10
+ calma SUBCUT 23 5
calma DIFF 22 0
calma DIFFFILL 22 4
calma POLY 30 0
@@ -3582,7 +3592,7 @@
# See document 180MCU_YI-141-EP059-01_10.pdf
resist (nwell,dnwell)/well 1000000
- resist (pwell)/well 3250000
+ resist (pwell,isosub)/well 3250000
resist (*ndiff,nsd)/active 6300
resist (*pdiff,*psd)/active 7000
@@ -3686,7 +3696,7 @@
# High-end corner resistances (milliohms per square)
resist (nwell,dnwell)/well 1200000
- resist (pwell)/well 3250000
+ resist (pwell,isosub)/well 3250000
resist (*ndiff,nsd)/active 15000
resist (*pdiff,*psd)/active 15000
@@ -3790,7 +3800,7 @@
# Low-end corner resistances (milliohms per square)
resist (nwell,dnwell)/well 800000
- resist (pwell)/well 3250000
+ resist (pwell,isosub)/well 3250000
resist (*ndiff,nsd)/active 1000
resist (*pdiff,*psd)/active 1000
