tree b04e5d0ac07464ab73d2606eed1f965e70a8add0
parent cfe970cf064ecd490117858b3eef726b610bc161
author Tim Edwards <tim@opencircuitdesign.com> 1614373531 -0500
committer Tim Edwards <tim@opencircuitdesign.com> 1614373531 -0500

Corrected the GDS read of the SRAM cell so that the weird parasitic
device formed between DIFF and TAP under a grounded gate is interpreted
as type npd, which is the type that has a model that supposedly is for
this device.  I attempted to add extraction methods specifically for
the parasitic MOScap-type devices in the SRAM cell.  Both now generate
error messages when extracting.  The DIFF/TAP-under-gate device now
extracts with the correct length and width.  The pFET MOScap has the
correct width but not length (probably counting the sides).