)]}'
{
  "commit": "a7915eafb7da936dfca574c792a384db1b060989",
  "tree": "679e9ff8bff76fe36600f9bfa66aa771db1337af",
  "parents": [
    "d14571f09a21e2722f5ae5a45f9cd27ab95c1ec3"
  ],
  "author": {
    "name": "Tim Edwards",
    "email": "tim@opencircuitdesign.com",
    "time": "Wed Jan 06 16:57:58 2021 -0500"
  },
  "committer": {
    "name": "Tim Edwards",
    "email": "tim@opencircuitdesign.com",
    "time": "Wed Jan 06 16:57:58 2021 -0500"
  },
  "message": "Added parameter handling in extraction of MOSFET devices for source\nand drain area and perimeter.\n",
  "tree_diff": [
    {
      "type": "modify",
      "old_id": "2dc5417daaed6fd113d13d365f66d1f7af1a30bc",
      "old_mode": 33188,
      "old_path": "sky130/magic/sky130.tech",
      "new_id": "f310d501eebfe1f4e3fcb82f70834f10d00fef73",
      "new_mode": 33188,
      "new_path": "sky130/magic/sky130.tech"
    }
  ]
}