)]}'
{
  "commit": "5c4222f08a02c53bf9450c7bf0e2c31b689fefbf",
  "tree": "510fbb6961906734dd2d246823df2d173a6d53ff",
  "parents": [
    "c12bcdcd0a08470cd6351923ccb8f95d426f8d4f"
  ],
  "author": {
    "name": "Tim Edwards",
    "email": "tim@opencircuitdesign.com",
    "time": "Tue Feb 16 13:12:17 2021 -0500"
  },
  "committer": {
    "name": "Tim Edwards",
    "email": "tim@opencircuitdesign.com",
    "time": "Tue Feb 16 13:12:17 2021 -0500"
  },
  "message": "Updated metal1 to metal4 fill to increase pattern spacing for\ncoarse patterning from 0.6um to 0.8um to reduce the maximum pattern\ndensity from 59% to about 51%, especially as being so close to the\nlimit was pushing metal4 full-chip density over the limit due to\nthe wide m4 buses on the I/O cells.\n",
  "tree_diff": [
    {
      "type": "modify",
      "old_id": "d2cfbeacfb818f27951b5614b9ff2ce73b989c7b",
      "old_mode": 33188,
      "old_path": "sky130/magic/sky130.tech",
      "new_id": "d25895f92512760996ef5f42c65907d349147139",
      "new_mode": 33188,
      "new_path": "sky130/magic/sky130.tech"
    }
  ]
}