)]}'
{
  "commit": "486fb8633c3d95ae475a5ccd68d0066c25919bb5",
  "tree": "0218118970f340f7f534005702a27ce971f218d4",
  "parents": [
    "557e88e831e0392ef98a0253fa92da73926ba6a7"
  ],
  "author": {
    "name": "R. Timothy Edwards",
    "email": "tim@opencircuitdesign.com",
    "time": "Sat Nov 22 15:22:19 2025 -0500"
  },
  "committer": {
    "name": "R. Timothy Edwards",
    "email": "tim@opencircuitdesign.com",
    "time": "Sat Nov 22 15:22:19 2025 -0500"
  },
  "message": "Reworked the 5V vs. 6V transistor handling in magic for GF180MCU\nto be a bit more consistent with other tools (namely klayout,\nbut also with layout submitted to GF and checked by GF).  The\n5V and 6V FET devices were separated into two types \"mvnfet\"\n(\"mvpfet\") and \"hvnfet\" (\"hvpfet\"), respectively, where previously\nthere was only one type.  The FET5VDEF mask (112:1, or V5_XTOR)\nis applied to the \"mv\" types and not to the \"hv\" types.  The\ngenerated cells have been modified to match this, with the\ncorrect gate type being applied for \"5V\" vs. \"6V\" types.  The\ndevice DRC for minimum channel length is applied separately.\n",
  "tree_diff": [
    {
      "type": "modify",
      "old_id": "923cd2c31be4a210ca2919e4154d807a5144066b",
      "old_mode": 33188,
      "old_path": "gf180mcu/magic/gf180mcu.tcl",
      "new_id": "ab6490fc140f268a7915f150a656c2921d613212",
      "new_mode": 33188,
      "new_path": "gf180mcu/magic/gf180mcu.tcl"
    },
    {
      "type": "modify",
      "old_id": "0412561f1fb24c343a88bc0f64e0cfc9aa4e2062",
      "old_mode": 33188,
      "old_path": "gf180mcu/magic/gf180mcu.tech",
      "new_id": "4553062fbab7ccf76c383115728d2119c8e24d8f",
      "new_mode": 33188,
      "new_path": "gf180mcu/magic/gf180mcu.tech"
    }
  ]
}