Extended the generated device script for GF180MCU to allow MOS
devices to be drawn with asymmetric source and drain. This
does not affect the existing routines but will enable future
drawing routines for the LDMOS and DSS devices.
diff --git a/gf180mcu/magic/gf180mcu.tcl b/gf180mcu/magic/gf180mcu.tcl
index bd2d8a3..b7bb5d6 100644
--- a/gf180mcu/magic/gf180mcu.tcl
+++ b/gf180mcu/magic/gf180mcu.tcl
@@ -3668,7 +3668,7 @@
# MOSFET: Draw a single device
#----------------------------------------------------------------
-proc gf180mcu::mos_device {parameters} {
+proc gf180mcu::mos_device {xcount parameters} {
# Epsilon for avoiding round-off errors
set eps 0.0005
@@ -3685,6 +3685,19 @@
set $key [dict get $parameters $key]
}
+ # For symmetric devices, set the drain-specific parameters to be the
+ # same as the generic parameters.
+
+ if {![dict exists $parameters drain_diff_type]} {
+ set drain_diff_type $diff_type
+ }
+ if {![dict exists $parameters drain_diff_contact_type]} {
+ set drain_diff_contact_type $diff_contact_type
+ }
+ if {![dict exists $parameters drain_diff_extension]} {
+ set drain_diff_extension $diff_extension
+ }
+
# Draw the diffusion and poly
pushbox
box size 0 0
@@ -3695,19 +3708,37 @@
box grow s ${hw}um
box grow e ${hl}um
box grow w ${hl}um
- pushbox
- if {${diff_extension} > ${gate_to_diffcont}} {
- box grow e ${diff_extension}um
- box grow w ${diff_extension}um
+ # Set drain and source sides based on xcount.
+ if {[% $xcount 2] == 1} {
+ set dside e
+ set sside w
} else {
- box grow e ${gate_to_diffcont}um
- box grow w ${gate_to_diffcont}um
+ set dside w
+ set sside e
+ }
+ pushbox
+ if {${drain_diff_extension} > ${gate_to_diffcont}} {
+ box grow $dside ${drain_diff_extension}um
+ } else {
+ box grow $dside ${gate_to_diffcont}um
# Grow to far side of contact; avoids diffusion separation if
# the contact is a dogbone and is moved outward to meet the DRC
# diffusion to gate spacing rule.
set hc [/ ${contact_size} 2.0]
- box grow e ${hc}um
- box grow w ${hc}um
+ box grow $dside ${hc}um
+ }
+ paint ${drain_diff_type}
+ popbox
+ pushbox
+ if {${diff_extension} > ${gate_to_diffcont}} {
+ box grow $sside ${diff_extension}um
+ } else {
+ box grow $sside ${gate_to_diffcont}um
+ # Grow to far side of contact; avoids diffusion separation if
+ # the contact is a dogbone and is moved outward to meet the DRC
+ # diffusion to gate spacing rule.
+ set hc [/ ${contact_size} 2.0]
+ box grow $sside ${hc}um
}
paint ${diff_type}
popbox
@@ -3801,18 +3832,18 @@
set cpl [* ${cpl} [/ ${polycov} 100.0]]
}
- # Right diffusion contact
+ # Drain diffusion contact
pushbox
- box move e ${hl}um
- box move e ${gate_to_diffcont}um
+ box move $dside ${hl}um
+ box move $dside ${gate_to_diffcont}um
set cext [gf180mcu::unionbox $cext [gf180mcu::draw_contact 0 ${cdw} \
${diff_surround} ${metal_surround} ${contact_size}\
- ${diff_type} ${diff_contact_type} m1 ${diffcont_orient}]]
+ ${drain_diff_type} ${drain_diff_contact_type} m1 ${diffcont_orient}]]
popbox
- # Left diffusion contact
+ # Source diffusion contact
pushbox
- box move w ${hl}um
- box move w ${gate_to_diffcont}um
+ box move $sside ${hl}um
+ box move $sside ${gate_to_diffcont}um
set cext [gf180mcu::unionbox $cext [gf180mcu::draw_contact 0 ${cdw} \
${diff_surround} ${metal_surround} ${contact_size} \
${diff_type} ${diff_contact_type} m1 ${diffcont_orient}]]
@@ -3897,7 +3928,7 @@
# to duplicate it here with calculations.
tech lock *
- set bbox [gf180mcu::mos_device $parameters]
+ set bbox [gf180mcu::mos_device 0 $parameters]
# puts stdout "Diagnostic: Device bounding box e $bbox (um)"
tech unlock *
@@ -3991,7 +4022,7 @@
for {set xp 0} {$xp < $nf} {incr xp} {
pushbox
for {set yp 0} {$yp < $m} {incr yp} {
- gf180mcu::mos_device $parameters
+ gf180mcu::mos_device $xp $parameters
box move n ${dy}um
}
popbox
