| 3.0V native NMOS FET |
| -------------------- |
| |
| Spice Model Information |
| ~~~~~~~~~~~~~~~~~~~~~~~ |
| |
| - Cell Name: :cell:`sky130_fd_pr__nfet_01v8` |
| - Model Name: :model:`sky130_fd_pr__nfet_03v3_nvt` |
| |
| Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr__nfet_03v3_nvt` |
| |
| - V\ :sub:`DS` = 0 to 3.3V |
| - V\ :sub:`GS` = 0 to 3.3V |
| - V\ :sub:`BS` = 0 to -3.3V |
| |
| Details |
| ~~~~~~~ |
| |
| The native device is constructed by blocking out all VT implants. |
| |
| The model and EDR (e-test) parameters are compared below. Note that the minimum gate length for 3V operation is 0.5 ยตm. |
| |
| |
| .. include:: ../nfet_03v3_nvt-and-nfet_05v0_nvt/nfet_03v3_nvt-and-nfet_05v0_nvt-table0.rst |
| |
| |
| |
| The symbols for the :model:`sky130_fd_pr__nfet_03v3_nvt` devices are shown below. |
| |
| |symbol-nfet_0v3v3_nvt| |
| |
| The cross-section of the native devices is shown below. |
| |
| |
| |cross-section-nfet_03v3_nvt| |
| |
| .. |symbol-nfet_0v3v3_nvt| image:: symbol-nfet_03v3_nvt.svg |
| .. |cross-section-nfet_03v3_nvt| image:: ../nfet_03v3_nvt-and-nfet_05v0_nvt/cross-section-nfet_03v3_nvt-and-nfet_05v0_nvt.svg |
| |
| .. note:: The only differences between the :model:`sky130_fd_pr__nfet_03v3_nvt` and :model:`sky130_fd_pr__nfet_05v0_nvt` devices are the minimum gate length and the VDS requirements. |
