| NMOS ESD FET |
| ------------ |
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| Spice Model Information |
| ~~~~~~~~~~~~~~~~~~~~~~~ |
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| - Cell Name: :cell:`sky130_fd_pr_base__nfet` |
| - Model Name: :model:`sky130_fd_pr_base__nshortesd`, :model:`sky130_fd_pr_base__nhvesd`, :model:`sky130_fd_pr_base__nhvesdnative` |
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| Operating Voltages where SPICE models are valid |
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| - V\ :sub:`DS` = 0 to 11.0V (nhv\*), 0 to 1.95V (nshort\*) |
| - V\ :sub:`GS` = 0 to 5.0V (nhv\*), 0 to 1.95V (nshort\*) |
| - V\ :sub:`BS` = 0 to -5.5V, (nhv), +0.3 to -5.5V (nhvnative), 0 to -1.95V (nshort\*) |
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| Details |
| ~~~~~~~ |
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| The ESD FET’s differ from the regular NMOS devices in several aspects, most notably: |
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| - Increased isolation spacing from contacts to surrounding STI |
| - Increased drain contact-to-gate spacing |
| - Placement of n-well under the drain contacts |
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| Major model output parameters are shown below and compared against the EDR (e-test) specs |
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| .. include:: fet-nmos-esd-table0.rst |
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| The symbols of the :model:`sky130_fd_pr_base__nhvesd` and :model:`sky130_fd_pr_base__nhvesdnative` (ESD NMOS FET) are shown below: |
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| |symbol-nmos-esd-fet-nhvesd| |symbol-nmos-esd-fet-nhvesdnative| |
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| The cross-section of the ESD NMOS FET is shown below. |
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| |cross-section-nmos-esd-fet| |
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| .. |symbol-nmos-esd-fet-nhvesd| image:: symbol-nmos-esd-fet-nhvesd.svg |
| .. |symbol-nmos-esd-fet-nhvesdnative| image:: symbol-nmos-esd-fet-nhvesdnative.svg |
| .. |cross-section-nmos-esd-fet| image:: cross-section-nmos-esd-fet.svg |
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