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NMOS ESD FET
------------
Spice Model Information
~~~~~~~~~~~~~~~~~~~~~~~
- Cell Name: :cell:`sky130_fd_pr_base__nfet`
- Model Name: :model:`sky130_fd_pr_base__nshortesd`, :model:`sky130_fd_pr_base__nhvesd`, :model:`sky130_fd_pr_base__nhvesdnative`
Operating Voltages where SPICE models are valid
- V\ :sub:`DS` = 0 to 11.0V (nhv\*), 0 to 1.95V (nshort\*)
- V\ :sub:`GS` = 0 to 5.0V (nhv\*), 0 to 1.95V (nshort\*)
- V\ :sub:`BS` = 0 to -5.5V, (nhv), +0.3 to -5.5V (nhvnative), 0 to -1.95V (nshort\*)
Details
~~~~~~~
The ESD FETs differ from the regular NMOS devices in several aspects, most notably:
- Increased isolation spacing from contacts to surrounding STI
- Increased drain contact-to-gate spacing
- Placement of n-well under the drain contacts
Major model output parameters are shown below and compared against the EDR (e-test) specs
.. include:: fet-nmos-esd-table0.rst
The symbols of the :model:`sky130_fd_pr_base__nhvesd` and :model:`sky130_fd_pr_base__nhvesdnative` (ESD NMOS FET) are shown below:
|symbol-nmos-esd-fet-nhvesd| |symbol-nmos-esd-fet-nhvesdnative|
The cross-section of the ESD NMOS FET is shown below.
|cross-section-nmos-esd-fet|
.. |symbol-nmos-esd-fet-nhvesd| image:: symbol-nmos-esd-fet-nhvesd.svg
.. |symbol-nmos-esd-fet-nhvesdnative| image:: symbol-nmos-esd-fet-nhvesdnative.svg
.. |cross-section-nmos-esd-fet| image:: cross-section-nmos-esd-fet.svg