| 1.8V high-VT PMOS FET |
| --------------------- |
| |
| Spice Model Information |
| ~~~~~~~~~~~~~~~~~~~~~~~ |
| |
| - Cell Name: :cell:`sky130_fd_pr_base__pfet` |
| - Model Name: :model:`sky130_fd_pr_base__phighvt` |
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| Operating Voltages where SPICE models are valid |
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| - V\ :sub:`DS` = 0 to -1.95V |
| - V\ :sub:`GS` = 0 to -1.95V |
| - V\ :sub:`BS` = -0.1 to +1.95V |
| |
| Details |
| ~~~~~~~ |
| |
| Major model output parameters are shown below and compared against the EDR (e-test) specs |
| |
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| .. include:: fet-pmos-1v8-high-vt-table0.rst |
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| Inverter Gate Delays using nshort/:model:`sky130_fd_pr_base__phighvt` device combinations: |
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| .. include:: fet-pmos-1v8-high-vt-table1.rst |
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| The symbol of the :model:`sky130_fd_pr_base__phighvt` (1.8V high-VT PMOS FET) is shown below: |
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| |symbol-1v8-high-vt-pmos-fet| |
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| The cross-section of the high-VT PMOS FET is shown below. The cross-section is identical to the std PMOS FET except for the V\ :sub:`T` adjust implants (to achieve the higher V\ :sub:`T`) |
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| |cross-section-1v8-high-vt-pmos-fet| |
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| .. |symbol-1v8-high-vt-pmos-fet| image:: symbol-1v8-high-vt-pmos-fet.svg |
| .. |cross-section-1v8-high-vt-pmos-fet| image:: cross-section-1v8-high-vt-pmos-fet.svg |
| |
