diff --git a/README.rst b/README.rst
index 348d849..218694b 100644
--- a/README.rst
+++ b/README.rst
@@ -70,11 +70,19 @@
 * HV extended-drain NMOS and PMOS
 
 
+The `SKY130 Process Node`_ has is a extremely flexible offering, including many normally *optional* features as standard (feature like the local interconnect, SONOS functionality, MiM capacitors and more). This provides the designer with a **wide range** of flexibility in design choices.
+
+If your needs extend beyond the standard included functionality in the `SKY130 Process Node`_, please see `Contacting SkyWater`_ as they specializes in enabling production volume of process customization include `the addition of specialized materials like Nb, Ge, V2O5, Carbon Nanotubes <https://www.skywatertechnology.com/technology/>`_. Google and SkyWater continuing to explore new options to be included in the `SkyWater Open Source PDK`_ and `SKY130 Process Node`_ that enable new innovative solutions to traditional design problems.
+
+
 Typical usages of 130nm Process Nodes
-~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
+-------------------------------------
 
 The `130nm process <https://en.wikichip.org/wiki/130_nm_lithography_process>`_ was first commercialized around the 2001-2002 time frame and is now primarily used in the area of research, small microcontroller development, and mixed signal embedded designs such as IoT devices.
 
+A living Google document at <https://j.mp/si130nm> has been created to provide **inspiration** from what researchers, commercial entities and other groups have done with similar **sized** process nodes. As there are widely different constraints and possibilities from changes in both the manufacturing process and materials it is important **not** to assumed that the exact results found in the `130nm inspiration document <https://j.mp/si130>`_ can be identically reproduced on the `SKY130 Process Node`_.
+
+
 PDK Contents
 ============
 
diff --git a/README.src.rst b/README.src.rst
index 1cae234..70e8e42 100644
--- a/README.src.rst
+++ b/README.src.rst
@@ -58,11 +58,19 @@
 * HV extended-drain NMOS and PMOS
 
 
+The `SKY130 Process Node`_ has is a extremely flexible offering, including many normally *optional* features as standard (feature like the local interconnect, SONOS functionality, MiM capacitors and more). This provides the designer with a **wide range** of flexibility in design choices.
+
+If your needs extend beyond the standard included functionality in the `SKY130 Process Node`_, please see `Contacting SkyWater`_ as they specializes in enabling production volume of process customization include `the addition of specialized materials like Nb, Ge, V2O5, Carbon Nanotubes <https://www.skywatertechnology.com/technology/>`_. Google and SkyWater continuing to explore new options to be included in the `SkyWater Open Source PDK`_ and `SKY130 Process Node`_ that enable new innovative solutions to traditional design problems.
+
+
 Typical usages of 130nm Process Nodes
-~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
+-------------------------------------
 
 The `130nm process <https://en.wikichip.org/wiki/130_nm_lithography_process>`_ was first commercialized around the 2001-2002 time frame and is now primarily used in the area of research, small microcontroller development, and mixed signal embedded designs such as IoT devices.
 
+A living Google document at <https://j.mp/si130nm> has been created to provide **inspiration** from what researchers, commercial entities and other groups have done with similar **sized** process nodes. As there are widely different constraints and possibilities from changes in both the manufacturing process and materials it is important **not** to assumed that the exact results found in the `130nm inspiration document <https://j.mp/si130>`_ can be identically reproduced on the `SKY130 Process Node`_.
+
+
 PDK Contents
 ============