| 3.0V and 5.0V native NMOS FET |
| ----------------------------- |
| |
| Spice Model Information |
| ~~~~~~~~~~~~~~~~~~~~~~~ |
| |
| - Cell Name: :cell:`sky130_fd_pr_base__nfet` |
| - Model Name: :model:`sky130_fd_pr_base__ntvnative`, :model:`sky130_fd_pr_base__nhvnative` |
| |
| Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr_base__ntvnative` |
| |
| - V\ :sub:`DS` = 0 to 3.3V |
| - V\ :sub:`GS` = 0 to 3.3V |
| - V\ :sub:`BS` = 0 to -3.3V |
| |
| Details |
| ~~~~~~~ |
| |
| Operating Voltages where SPICE models are valid for :model:`sky130_fd_pr_base__nhvnative` |
| |
| - V\ :sub:`DS` = 0 to 5.5V |
| - V\ :sub:`GS` = 0 to 5.5V |
| - V\ :sub:`BS` = +0.3 to -5.5V |
| |
| Details |
| ~~~~~~~ |
| |
| The native device is constructed by blocking out all VT implants. |
| |
| The model and EDR (e-test) parameters are compared below. Note that the minimum gate length for 3V operation is 0.5 µm, whereas the 5V device has minimum gate length of 0.9 µm. |
| |
| |
| .. include:: fet-nmos-3v0-and-5v0-native-table0.rst |
| |
| |
| |
| The symbols for the :model:`sky130_fd_pr_base__ntvnative` and :model:`sky130_fd_pr_base__nhvnative` devices are shown below. |
| |
| |symbol-3v0-and-5v0-native-nmos-fet-ntvnative| |symbol-3v0-and-5v0-native-nmos-fet-nhvnative| |
| |
| The cross-section of the native devices is shown below. Note that the only differences between the nvtnative and :model:`sky130_fd_pr_base__nhvnative` devices are the minimum gate length and the VDS requirements. |
| |
| |cross-section-3v0-and-5v0-native-nmos-fet| |
| |
| .. |symbol-3v0-and-5v0-native-nmos-fet-ntvnative| image:: symbol-3v0-and-5v0-native-nmos-fet-ntvnative.svg |
| .. |symbol-3v0-and-5v0-native-nmos-fet-nhvnative| image:: symbol-3v0-and-5v0-native-nmos-fet-nhvnative.svg |
| .. |cross-section-3v0-and-5v0-native-nmos-fet| image:: cross-section-3v0-and-5v0-native-nmos-fet.svg |
| |
