diff --git a/docs/_static/metal_stack.svg b/docs/_static/metal_stack.svg
index 0002aa8..d6f5d33 100644
--- a/docs/_static/metal_stack.svg
+++ b/docs/_static/metal_stack.svg
@@ -27,8 +27,8 @@
 <path d="M643,923 L643,779 1619,779 1619,923 z" fill="#cbf3f3" stroke-width="2" stroke-linejoin="bevel" stroke-linecap="round" stroke="#cbf3f3" />
 <path d="M643,715 L643,571 1619,571 1619,715 z" fill="#cbf3f3" stroke-width="2" stroke-linejoin="bevel" stroke-linecap="round" stroke="#cbf3f3" />
 <path d="M659,491 L659,283 1571,283 1571,491 z" fill="#cbf3f3" stroke-width="2" stroke-linejoin="bevel" stroke-linecap="round" stroke="#cbf3f3" />
-<g transform="matrix(   1    0   -0    1 579  27)" fill="#000000" >
-<text stroke="none" font-family="Times" font-size="40" ><tspan x="0" y="0">SkyWater Sky130A metal stack (not to scale!):</tspan>
+<g transform="matrix(   1    0   -0    1 950  27)" fill="#000000" >
+<text stroke="none" font-family="Times" font-size="40" ><tspan x="0" y="0">(Diagram not to scale!)</tspan>
 </text></g>
 <path d="M443,1483 L1619,1483 " fill="none" stroke-width="2" stroke-linejoin="bevel" stroke-linecap="round" stroke="#000000" />
 <path d="M931,1483 L931,1499 " fill="none" stroke-width="2" stroke-linejoin="bevel" stroke-linecap="round" stroke="#000000" />
diff --git a/docs/index.rst b/docs/index.rst
index 4c3e657..53ea8f3 100644
--- a/docs/index.rst
+++ b/docs/index.rst
@@ -3,6 +3,8 @@
 .. toctree::
     :hidden:
 
+    Design Rules <rules>
+
     versioning
     Current Status <status>
     known_issues
diff --git a/docs/rules.rst b/docs/rules.rst
new file mode 100644
index 0000000..7529142
--- /dev/null
+++ b/docs/rules.rst
@@ -0,0 +1,10 @@
+SkyWater SKY130 Process Design Rules
+====================================
+
+.. toctree::
+    :caption: Process Design Rules
+    :name: rules
+    :maxdepth: 2
+
+    Introduction <rules/background>
+    Design Rule Criteria & Assumptions <rules/assumptions>
diff --git a/docs/rules/assumptions.rst b/docs/rules/assumptions.rst
new file mode 100644
index 0000000..93ac6be
--- /dev/null
+++ b/docs/rules/assumptions.rst
@@ -0,0 +1,167 @@
+Criteria & Assumptions
+======================
+
+Process Stack Diagram
+---------------------
+
+.. image:: ../_static/metal_stack.svg
+   :width: 100%
+   :alt: SkyWater SKY130 Process Stack
+
+General
+-------
+
+.. csv-table:: Table 1 - General
+   :file: assumptions/01-general.csv
+   :header-rows: 1
+   :stub-columns: 1
+
+Minimum Critical Dimensions
+---------------------------
+
+.. csv-table:: Table 2 - Minimum CDs in Design or on Wafer, required by Technology (Core or Periphery)
+   :file: assumptions/02-mins.csv
+   :header-rows: 1
+   :widths: 20, 20, 10, 10, 10, 10
+
+Semiconductor Criteria
+----------------------
+
+Basic Parameters
+~~~~~~~~~~~~~~~~
+
+.. csv-table:: Table 3a - Semiconductor Criteria - Basic Parameters
+   :header-rows: 1
+   :width: 100%
+   :widths: 30, 10, 20, 10
+
+    ,Units,Value,Variable name
+    n-well peak concentration,cm-3,6.00E+017,NWPCONC
+    background concentration,cm-3,8.00E+14,NWBCONC
+    y.char,um,0.43,NWYCHAR
+    desired Nmin/Ns ratio,,0.9,NMINNSRATIO
+    min n-well width to guarantee 90 % peak concentr.,um,0.55,MINNWWID
+    p-well peak concentration,cm-3,4E+017,PWPCONC
+    p-well peak coordinate,um,0.42,PWPCOORD
+    y.char,um,0.13,PWYCHAR
+    min. p-well width to guarantee 90 % peak concentr.,um,0.33,MINPWWID
+
+Junction Depths
+~~~~~~~~~~~~~~~
+
+.. csv-table:: Table 3b - Semiconductor Criteria - Junction Depths
+   :header-rows: 1
+   :width: 100%
+   :widths: 30, 10, 10, 10, 10
+
+    ,Units,Vertical Feature,Vertical Space,Variable name
+    Baseline: N-Well,um,1.1, ,NWVDIM
+    P-Well,um,0.75,,PWVDIM
+    N-w/P-w junction (from drawn edge),um,*,0.034,WELLJCT
+    N+ or P+ S/D (XJ),um,0.1,0.06,JCTD / LD
+    Max (N+ or P+ S/D outdiff.) next to isol. edge,um,,0.007,LDST
+    Max (N+ or P+ S/D outdiff.) next to isol. edge for 6 V reg. devices,,,0.05,LDST5
+    N Tip (As),um, ,0.01,LDNTIP
+
+Other Width Criteria
+~~~~~~~~~~~~~~~~~~~~
+
+.. csv-table:: Table 3c - Semiconductor Criteria - Other Width Criteria
+   :header-rows: 1
+   :width: 100%
+   :widths: 30, 10, 20, 10
+
+    ,Units,Value,Variable name
+    Min. diff/tap width for reproducible resistivity,um,0.12,MINFWR
+    Min. width to open a strip of tap between two diffs,um,0.34,SDM3
+    "Max s/d diff width without contact, consistent w/Ram4,5,6",um,5.7,XMAXCON
+
+Punchthrough Criteria
+~~~~~~~~~~~~~~~~~~~~~
+
+.. csv-table:: Table 3d - Semiconductor Criteria - Minimum Spacing for 3.3V Punchthrough (1.8V devices)
+   :header-rows: 1
+   :width: 100%
+   :widths: 30, 10, 20, 10
+
+    ,Units,Value,Variable name
+    n-well - n-well ,um,0.835,NWPTS
+    n+ - n+ or p+-p+,um,0.23,DPTS
+    p+ in nwell to pwell,um,0.05,PPTS
+    n+ in pwell to nwell,um,0.15,PNPTS
+
+Latch-up/ESD Criteria
+~~~~~~~~~~~~~~~~~~~~~
+
+.. csv-table:: Table 3e - Semiconductor Criteria - Latch-up/ESD Criteria
+   :header-rows: 1
+   :width: 100%
+   :widths: 30, 10, 20, 10
+
+    Minimum n+ or p+ - nwell spacing to prevent latch-up,um,0.23,NPNWLU
+    Min n-well enclos. of tap to ensure bkdwn N-w/P-w before N+/P-w (ESD),um,0.04,XNWESD
+    Max. overlap of n-well by p+ tap,um,0.06,XNWPTS
+
+Implant angles
+~~~~~~~~~~~~~~
+
+.. csv-table:: Table 3f - Semiconductor Criteria - Implant angles
+   :header-rows: 1
+   :width: 100%
+   :widths: 30, 10, 10, 10, 10
+
+    ,Units,Angle,,Variable name
+    High current,deg,0,0,HCIMPA
+    Angle for tip implant ,deg,7,,TipAng
+    Angle for HV tip implant ,deg,40,,HvTipAngle
+    Twist angle for HV Tip ,deg,23,,HvTipTwist
+
+Physical Criteria
+-----------------
+
+.. csv-table:: Table 4 - Physical Criteria
+   :file: assumptions/04-physical.csv
+   :header-rows: 1
+   :widths: 60, 10, 1, 10, 10, 10
+
+Laser Fuse Criteria
+-------------------
+
+.. csv-table:: Table 5 - Laser Fuse Criteria
+   :file: assumptions/05-laser-fuse.csv
+   :header-rows: 1
+   :widths: 60, 10, 1, 10, 10, 10
+
+.. What happened to 6!?
+
+Other criteria and parameters
+-----------------------------
+
+.. csv-table:: Table 7 - Other criteria and parameters
+   :file: assumptions/07-other.csv
+   :header-rows: 1
+   :widths: 60, 10, 1, 10, 10, 10
+
+Criteria for High Voltage FET
+-----------------------------
+
+.. csv-table:: Table 8 - Criteria for High Voltage FET
+   :file: assumptions/08-hv.csv
+   :header-rows: 1
+   :widths: 60, 10, 1, 10, 10, 10
+
+Criteria for polyimide manufacturability
+----------------------------------------
+
+.. csv-table:: Table 9 - Criteria for polyimide manufacturability
+   :file: assumptions/09-polyimide.csv
+   :header-rows: 1
+   :widths: 60, 10, 1, 10, 10, 10
+
+Criteria for VPP capacitor
+--------------------------
+
+.. csv-table:: Table 10 - Criteria for VPP capacitor
+   :file: assumptions/10-vpp-capacitor.csv
+   :header-rows: 1
+   :widths: 60, 10, 1, 10, 10, 10
diff --git a/docs/rules/assumptions/01-general.csv b/docs/rules/assumptions/01-general.csv
new file mode 100644
index 0000000..b217fdd
--- /dev/null
+++ b/docs/rules/assumptions/01-general.csv
@@ -0,0 +1,4 @@
+Parameter,,Units,Value,,Variable name
+Space to Draw,, ,S8,, 
+Grid Size - Drawn,,um,0.005,,GSF
+Approximate Scale Factor for R32 data,,,0.3,,sfr32
diff --git a/docs/rules/assumptions/02-mins.csv b/docs/rules/assumptions/02-mins.csv
new file mode 100644
index 0000000..c2fd3ac
--- /dev/null
+++ b/docs/rules/assumptions/02-mins.csv
@@ -0,0 +1,59 @@
+Layer Name,,Feature Size,Space Size,Feature Name,Space Name
+Field Oxide,,0.14,0.27,FOMCD,FOMCDSP
+Deep N-Well,,3,6.3,DNMCD,DNMCDSP
+P-Well Block Mask,,0.84,1.27,PWBMCD,PWBMCDSP
+P-Well Drain Extended ,,0.84,1.27,PWDEMCD,PWDEMCDSP
+N-Well,,0.84,1.27,NWMCD,NWMCDSP
+High Vt PCh,,0.38,0.38,HVTPMCD,HVTPMCDSP
+Low Vt Nch,,0.38,0.38,LVTNMCD,LVTNMCDSP
+HLow VT PCh Radio,,0.38,0.38,HVTRMCD,HVTRMCDSP
+N-Core Implant,,0.38,0.38,NCMCD,NCMCDSP
+Tunnel Mask,,0.41,0.5,TUNMCD,TUNMCDSP
+ONO Mask,,0.41,0.5,ONOMCD,ONOMCDSP
+Low Voltage Oxide,,0.6,0.7,LVOMCD,LVOMCDSPCSMC
+Resistor Protect,,1.27,0.84,RPMCD,RPMCDSP
+Poly 1,Endcap/Gap,0.15,0.21,P1G,
+Poly 1,,N/A,0.14,P1MCD,P1MCDSP
+N-tip Implant,,0.84,0.7,NTMCD,NTMCDSP
+High Volt. N-tip,,0.7,0.7,HVNTMCD,HVNTMCDSP
+Lightly Doped N-tip,,0.7,0.7,LDNTMCD,LDNTMCDSP
+Nitride Poly Cut,,0.27,0.27,NPCMCD,NPCMCDSP
+P+ Implant,,0.38,0.38,PSDMCD,PSDMCDSP
+N+ Implant,,0.38,0.38,NSDMCD,NSDMCDSP
+Local Intr Cont.1,Slotted,0.17,0.17,LICM1SLCD,LICM1SLCDSP
+Local Intr Cont.1,Core,0.19,0.35,LICM1CD,LICM1CDSP
+Local Intrcnct 1,Core,0.14,0.14,LI1MCD,LI1MCDSP
+Local Intrcnct 1,,0.17,0.17,LI1MCD,LI1MCDSP
+Contact,,0.17,0.19,CTM1CD,CTM1CDSP
+Open Frame Mask,,N/A,N/A,OFMCD,OFMCDSP
+Metal 1,,0.14,0.14,MM1CD,MM1CDSP
+Metal 1 - Cu,,0.14,0.14,MM1_CuCD,MM1_CuCDSP
+Via,,0.15,0.17,VIMCD,VIMCDSP
+Via - Cu,,0.18,0.13,VIM_CuCD,VIM_CuCDSP
+Capacitor MiM,,2,0.84,CAPMCD,CAPMCDSP
+Metal 2,,0.14,0.14,MM2CD,MM2CDSP
+Metal 2 - Cu,,0.14,0.14,MM2_CuCD,MM2_CuCDSP
+Via 2-TNV,,0.28,0.28,VIM2CD,VIM2CDSP
+Via 2-S8TM,,0.8,0.8,VIM2CD,VIM2CDSP
+Via 2-PLM, ,0.2,0.2,VIM2CD,VIM2CDSP
+Via 2-Cu, ,0.21,0.18,VIM2_CuCD,VIM2_CuCDSP
+Metal 3-TLM,,0.36,0.36,MM3CD,MM3CDSP
+Metal 3-S8TM,,0.8,0.8,MM3CD,MM3CDSP
+Metal 3-PLM,,0.3,0.3,MM3CD,MM3CDSP
+Metal 3-Cu, ,0.3,0.3,MM3_CuCD,MM3_CuCDSP
+Pad Via,,1.2,1.27,VIPDMCD,VIPDMCDSP
+Via3-PLM,,0.2,0.2,VIM3CD,VIM3CDSP
+Via3-Cu, ,0.21,0.18,VIM3_CuCD,VIM3_CuCDSP
+Inductor-TLM,,2.5,2.5,INDMCD,INDMCDSP
+Metal 4,,0.3,0.3,MM4CD,MM4CDSP
+Metal 4-Cu, ,0.3,0.3,MM4_CuCD,MM4_CuCDSP
+Via4,,0.8,0.8,VIM4CD,VIM4CDSP
+Metal 5,All flows except S8PF*/S8PIR*,0.8,0.8,MM5CD,MM5CDSP
+Metal 5,S8PF*/S8PIR*,1.6,1.6,MM5CD,MM5CDSP
+Nitride Seal Mask,,3,4,NSMCD,NSMCDSP
+Pad (scribe protect),,2,1.27,PDMCD,PDMCDSP
+Polyimide,,5,15,PMMCD,PMMCDSP
+Polyimide_ExtFab,,5,15,PMM[E]CD,PMM[E]CDSP
+DECA PBO, ,10,10,PBOCD,PBOCDSP
+Cu Inductor/Redist.,,20,20,CU1MCD,CU1MCDSP
+Serifs,,0.1,0.1,SERCD,SERCDSP
diff --git a/docs/rules/assumptions/04-physical.csv b/docs/rules/assumptions/04-physical.csv
new file mode 100644
index 0000000..009fdb1
--- /dev/null
+++ b/docs/rules/assumptions/04-physical.csv
@@ -0,0 +1,73 @@
+Material Thicknesses,,,Value (um),,Variable name
+field oxide (above silicon surface) ... underneath poly,,,0.07,,FOXSTEP
+"min. etch and fill capability for isolation, licon, and met1",,,0.15,,DEFC
+min. etch and fill capability for mcon,,,0.14,,CEFC
+min. etch and fill capability for via,,,0.18,,VEFC
+poly cap after SPE,,,0.2,,OVGTTH
+poly thickness,,,0.18,,POLYTH
+oxide spacer ,,,0.05,,SpThickn
+Pre-LI ILD thickness,,,0.5,,ILDTHICKN
+Licon1 etch angle (deg),,,10,,LICETANG
+Standard Licon bottom CD,,,0.08,,LBCD
+Mcon enclosure by Li,,,0,,mconLiEnclosure
+Via1 slope,,,0.02,,Via1Slope
+Oxide Bias for MM1,,,0.6,,BiasMM1
+Oxide Bias for MM2,,,0.6,,BiasMM2
+Oxide Bias for MM3,,,1.15,,BiasMM3
+Oxide Bias for MM4,,,1.15,,BiasMM4
+LI1 thickness for antenna ratio calculations,,,0.1,,LiThick
+Metal 1 thickness for antenna ratio calculations (S8D*),,,0.35,,Met1Thick
+Metal 2 thickness for antenna ratio calculations (S8D*),,,0.35,,Met2Thick
+Inductor thickness for antenna ratio calculation (S8D*),,,4,,IndmThick
+Metal 3 thickness for antenna ratio calculation  (S8Q/SP8Q),,,0.8,,Met3thick_q
+Metal4 thickness for antenna ratio calculation (S8Q*/SP8Q),,,2,,Met4Thick_q
+Metal 3 thickness for antenna ratio calculation  (S8P*/SP8P*),,,0.8,,Met3thick_p
+Metal4 thickness for antenna ratio calculation (S8P*/SP8P*),,,0.8,,Met4Thick_p
+Metal5 thickness for antenna ratio calculation (S8P*/SP8P* with 2um thick metal),,,2,,Met5Thick_p
+Metal5 thickness for antenna ratio calculation (S8P*/SP8P* with 1.2um thick metal),,,1.2,,Met5Thickp_12
+Metal 2 thickness for antenna ratio calculations (SP8T/S8T*),,,0.35,,Met2_Qthick
+Metal 3 thickness for antenna ratio calculations (S8T* other than S8TM*),,,0.85,,Met3_Qthick
+Metal 3 thickness for antenna ratio calculations (S8TM* flow),,,2,,Met3_TMthick
+Metal 3 thickness for antenna ratio calculations (SP8T flow),,,0.8,,Met3_SP8Tthick
+Photoresist thickness,,,1.14,,PRTHICKN
+Photoresist thickness for HV Tip Implants,,,0.3,,PrThickImplant
+Min width of tip implant opening,,,0.1,,minTip_impW
+NTM shadowing,,,0.16,,ntmShadowing
+HVNTM shadowing,,,0.232,,hvntmShadowing
+HVPTM shadowing,,,0.089,,hvptmShadowing
+pseudo-shadowing,,,0.045,,pseudoShadowing
+Channel length for low Vt PMOS,,,0.35,,lvtpmos_poly
+Width of the Low Leakage gate on each side of LowVt Pmos connected to power rails (requirement based on exp data),,,0.28,,LvtEnc_forPowerRail
+CD tolerance for PDM (3s),,,1,,PdmCD_tol
+Min process bias 3s tolerance,,,0.032,,PHTOL
+Min process bias 3s tolerance for poly,,,0.02,,PHP1TOL
+Minimum Space and Overlap,,,Value (um),,Variable name
+Minimum mcon overlap onto LI for reproducible contact resistance,,,0.12,,TCONOVLP 
+Dogbone PR decay length (SRS 8/4/99),,,0.2,,DBPRDEC
+Bowing of rectangular contact (per edge) -- seal ring sizing,,,0.015,,TBOWINGSEAL
+Waffling / Pattern Density,,,Value,,Variable name
+S8 average FOM PD (extractions from logic device),,,0.45,,FOMPDAVG
+Size of small PD extraction box for rough tolerance (um),,,700,,SMALLPDBOX
+Size of large PD extraction box for rough tolerance (um),,,2000,,LARGEPDBOX
+Min pattern density for oxide,,,0.75,,OxideMinPD
+Min MM* PD range,,,0.3,,MMPDrange
+FOM 700um box PD tolerance for CMP (SOI8 PCR2) for all technologies,,,0.15,,FOM700TOL
+Stepping box shift as a percent of box size,,,0.5,,BOXSHIFT
+Maximum metal waffle drop pattern density in the frame,,,0.55,,PD_FrameWP
+Window size for frame waffle drop PD check,,,100,,WP_PDWINDOW
+Step size for frame waffle drop PD check,,,10,,WP_PDSTEP
+Other,,,Value,,Variable name
+Poly resistor width and spacing to reduce CD variation (um),,,0.33,,POLYRCD
+Poly resistor width and spacing to reduce CD variation (um),,,0.48,,POLYRSPC
+Spacing between slotted_licons (Not applicable when the two edges L= 0.19um),,,0.51,,LICM1SLSP1
+Precision resistor width to accommodate 6 contacts across,,,2.03,,PRECRESW
+Li resistor width (to drop one Licon w/o dogbones),,,0.29,,LIRESCD
+Correction factor for spacing to a wide metal line,,,2,,BIGMF
+Min spacing for created dnwell to pnp.dg (more restrictive than dnwell.4 rule),,,5,,cdnwPnpSpc
+"Min spacing between nwell and deep nwell on separate nets (Taken from dnwell.3 from S4* TDR *N plus rounded up, IGK request.)",,,6,,nwellDnwellSpc
+Min space between deep nwells used as photo diode (um),,,5,,PDDnwSpc
+Min space between dnwell (used for photo diode and other deep nwell (um),,,5.3,,PDDnwSpc1
+Min/Max width of nwell inside deep nwell (for photo diodes),,,0.84,,PDNwmCD
+Min/Max enclosure of nwell by deep nwell (for photo diode),,,1.08,,PDNwmDnwEnc
+Min/Max width of tap inside deep nwell (for photo diode),,,0.41,,PDTapCD
+Min/Max enclosure of tap by nwell inside deep nwell (for photo diode),,,0.215,,PDTapNwmEnc
diff --git a/docs/rules/assumptions/05-laser-fuse.csv b/docs/rules/assumptions/05-laser-fuse.csv
new file mode 100644
index 0000000..09dbd1a
--- /dev/null
+++ b/docs/rules/assumptions/05-laser-fuse.csv
@@ -0,0 +1,15 @@
+,,,Value (um),,Variable name
+Min. spac. of laser spot to diffused junction to ensure jct integrity,,,0.6,,XLASJUN
+Max. width of a metal fuse line that can be removed reliably,,,0.8,,FSW
+Min. L of met. fuse at which damage doesn't extend beyond ends,,,6.605,,FSLE
+Max. extension of met2 beyond fuse boundary,,,0.005,,FEXT
+Min. distance between laser spot and active junction,,,0.545,,LASJCT
+Standard contact bottom CD,,,0.09,,
+Positioning tolerance of laser spot (3 s),,,0.3,,LASMA
+Nominal effective laser spot diameter,,,3.5,,LASSPT
+Max. increase in spot diameter at max. distance from focus (3 s),,,0.9,,LASCDTOL
+Fuse melting radius,,,3.6,,MELTRAD
+Melting related crack size in ILD,,,0.36,,FUSECRACK
+Min space between fuse and any feature not connected to it,,,0.2,,MinFuseSpace
+Space between fuse and any unrelated layer,,,0.5,,SP_fuse_to_unrelated
+DC offset in some fuse rules,,,0.87,,LASDC1
diff --git a/docs/rules/assumptions/07-other.csv b/docs/rules/assumptions/07-other.csv
new file mode 100644
index 0000000..2a4cfc6
--- /dev/null
+++ b/docs/rules/assumptions/07-other.csv
@@ -0,0 +1,42 @@
+Layer / Design rule,CD,,space,,Comment
+MOSFET width,0.135,,,,FOMSE
+MOSFET width in standard cells,0.075,,,,FOMSESC
+Spacing of poly on field to diff,,,0.065,,PFDSE
+Spacing of poly on field to tap,,,0.005,,PFTSE
+Enclosure of tap by nwell for pwell res,,,0.22,,PTAP_NWL_SP
+Grid conversion rounding factor,,,0.005,,GRCF
+Licon enclosure rounding,,,0.02,,LICENCLR
+LI1CD add/drop,0.01,,0.04,,
+Huge metal X min. W and L,3,,,,HugeM
+Min Nsdm area ,0.265,,,,MinNsdmArea
+Min Psdm area,0.255,,,,MinPsdmArea
+Min N/Psdm hole area ,0.265,,,,MinNPsdmHole
+Large waffle size must be divisible by 4,7.2,,,,waffle_large
+P1M additional CD control,0.011,,,,P1MCDcontrol
+Li1 proximity correction,,,0.25,,LI1PROXSpace
+"Serif added to nwell convex corner (SXX-572, 573)",0.22,,,,NwellCvxSerif
+"Serif added to nwell concave corner (SXX-572, 573)",0.12,,,,NwellCveSerif
+NWM extension beyond nwell edge straddling de_nFet_source (for GSMC; QZM-133),0.075,,,,NvhvNwellExt
+Min enclosure of pad by pmm for Cu inductor (JNET-80) ,0,,,,padPMMEncInd
+Min enclosure of pmm by cu1m for Cu inductor (JNET-80) ,10.75,,,,pmmCu1mEncInd
+Min enclosure of pbo by cu1m per DECA 000348 Rev S,10,,,,pboCu1mEnc
+Min enclosure of pmm by pmm2 for radio flow in the die (JNET-80) ,13,,,,pmmPmm2EncInd
+Min enclosure of pmm by pmm2 inside frame,7.5,,,,pmmPmm2EncIndFrame
+Min space between pmm2 and Inductor.dg ,,,7.5,,pmm2IndSpc
+Min cu1m PD across full chip,0.35,,,,MinCU1Mpd
+Max cu1m PD across full chip,0.45,,,,MaxCU1Mpd
+Spacing between RDL and outer edge of seal ring,15,,,,RdlSealSpc
+Spacing between RDL and pmm2,6.16,,,,RdlPmm2Spc
+Enclosure of etest module in die by cpmm2,0,,,,EtestCpmm2Enc
+"Keepout of active, poly, li and metal to NSM (TCS-2253)",,,1,,NSMKeepout
+"3 um keepout of active, poly, li and metal to areaid.dt/areaid.ft (TCS-2253)",,,3,,NSMKeepout_3um
+pnp_emitter sizing (S8P GSMC flow),,,0.05,,PnpEmitterSzGSMC
+pnp_emitter sizing (other flows),,,0.03,,PnpEmitterSz
+MiM Capacitor aspect ration,20,,,,MiM_AR
+Min NCM space to be used to preserve NCM CL algorithm (avoid LVL error),,,1.27,,NCM_0LVL
+Min space of NCM between core and periphery due to existing layout restriction,,,0.96,,NcmCorePeriSP
+Multiplication factor,,,0.01,,S8LVconv
+Minimum scribe width,50,,,,scribew
+spacing of p-well  outside deep n-well to deep n-well mask edge,,,0.12,,NWDNWENCL
+p-well in deep n-well to p-sub,,,1.2,,NWDNWOL
+Field oxide etchback after P1ME before implants,,,0.04,,WFDEL
diff --git a/docs/rules/assumptions/08-hv.csv b/docs/rules/assumptions/08-hv.csv
new file mode 100644
index 0000000..9e1d3b5
--- /dev/null
+++ b/docs/rules/assumptions/08-hv.csv
@@ -0,0 +1,18 @@
+Layer / Design rule,CD,,space,,Comment
+Min HVNwell to any nwell space,,,2,,HVNwell_Nwell_SP
+Min HVDiff width,0.29,,,,HVDiff_CD
+Min HVDiff space,,,0.3,,HVDiff_SP
+Min HV Pmos gate width,0.5,,,,HVP_gate_CD
+Min space between HV poly,,,0.28,,HVPoly_SP
+Min HV Nmos gate width,0.37,,,,HVPoly_CD
+HV P+ Diff enclosure by Nwell,0.33,,,,HVPdiff_nwell_enc
+HV N+ diff space to Nwell,,,0.43,,HVNdiff_nwell_SP
+HV N+ tap enclosure by Nwell,0.33,,,,HVNtap_nwell_enc
+HV P+tap space to Nwell,,,0.43,,HVPtap_nwell_SP
+Photoresist tilted implant penetration,0.02,,,,HVPrPenetration
+Photoresist tilted implant blocking distance,0.013,,,,HVPrBlocking
+Min size of HVTip,0.1,,,,HVTipMinSize
+Extra CD tol for HVNTM to match Ram7 process,0.015,,,,HVNTMExtraCdTol
+Min HVDiff resistor width,0.29,,,,HVDiff_Res_CD
+High voltage n+-n+ or p+-p+,,,0.3,,HVDPTS15
+HV MOSFET channel length,0.5,,,,HVPCD
diff --git a/docs/rules/assumptions/09-polyimide.csv b/docs/rules/assumptions/09-polyimide.csv
new file mode 100644
index 0000000..4f03a9a
--- /dev/null
+++ b/docs/rules/assumptions/09-polyimide.csv
@@ -0,0 +1,13 @@
+Layer / Design rule,CD,,space,,Comment
+Enclosure of fuses by polyimide,12,,,,PimFuseEnc
+Enclosure of bondpad by polyimide (YUY-165),0.5,,,,PimPadEnc
+"Enclosure of pad:dg by PBO inside inductor capture pad, with DECA online monitoring",4.5,,,,PBOPadEnc
+Enclosure of pad:dg by PBO per standard DECA rules,7.5,,,,PBOPadEncDECA
+DECA PBO drawn-to-final process bias per side,0.5,,,,PBOProcBiasPerSide
+Polyimide CD tolerance,1,,,,PimCD_tol
+Min Pim width over pad openings,87,,,,PimOverPad_CD
+Polyimide slope (001-87400),,5.3,,,I_polyimide_slope
+Enclosure of polyimide by polymer tolerance,,7.7,,,Po_po_tol
+Min/Max enclosure of pad.dg inside M5RDL by pmm,0,,,,pmmM5RDLpadEnc
+Min spacing of pmm to (rdl NOT (pad.dg sized by 0.5)),,,19.16,,pmmRDLspc
+Enclosure of laser targets in the die by polyimide,30,,,,PimLaserEnc
diff --git a/docs/rules/assumptions/10-vpp-capacitor.csv b/docs/rules/assumptions/10-vpp-capacitor.csv
new file mode 100644
index 0000000..f29fddc
--- /dev/null
+++ b/docs/rules/assumptions/10-vpp-capacitor.csv
@@ -0,0 +1,7 @@
+Layer / Design rule,CD,,space,,Comment
+Min width of capacitor:dg,4.38,,,,VppWidth
+Max width of unit capacitor:dg,8.58,,,,VppMaxWidth
+Min spacing between two capacitor:dg ,1.5,,,,VppSpc
+Min spacing of capacitor:dg to li1 or met1 or met2 or nwell,1.5,,,,VppOtherSPc
+Min enclosure of capacitor by nwell,1.5,,,,VppNwmEnc
+Min spacing of pmm to (rdl NOT (pad.dg sized by 0.5)),,,19.16,,pmmRDLspc
diff --git a/docs/rules/background.rst b/docs/rules/background.rst
new file mode 100644
index 0000000..8485cc2
--- /dev/null
+++ b/docs/rules/background.rst
@@ -0,0 +1,15 @@
+Background
+==========
+
+SKY130 is a mature 180nm-130nm hybrid technology developed by Cypress Semiconductor that has been used for many production parts. SKY130 is now available as a foundry technology through SkyWater Technology Foundry.
+
+The technology is the 8th generation SONOS technology node (130nm).
+
+The technology stack consists of;
+
+- 5 levels of metal (`p` - penta)
+- Inductor or Inductor-Capable (`i`)
+- Poly resistor (`r`)
+- SONOS shrunken cell (`s`)
+- Supports 10V regulated supply (`10R`)
+