| ,General (RES.-) |
| .X,Parasitic resistance is not extrated under a sheet layer with it's corresponding res.id layer. |
| |
| ,Sheet Resistance (SR.-) |
| .X,Calibre now extracts deltaW by bucketing the sheet rho based on different widths.,The accuracy of each bucket must be within 2% of the Sheet Rho Calc using deltaW. |
| .met3,Parasitic resistance is calculated for all metal3 (if metal3 exists for the specific technology) |
| .met2,Parasitic resistance is calculated for all metal2. |
| .met1,Parasitic resistance is calculated for all metal1 with the exception of varactor which follow rule SR.xcnwvc.1 |
| .li1,Parasitic resistance is calculated for all li1. |
| .poly.1,Parasitic resistance on gates is calculated to the center of the gate. |
| .poly.2,Parasitic resistance for poly is not extracted beyond the device terminal. The device terminal for all devices but MOS is at the edge of the poly. Note: This means that parasitic resistance is not extracted for poly that is part of an LVS capacitor or LVS resistor. The LVS capacitors have poly in the model. |
| .diff.1,Parasitic resistance is not extracted for any diffusion regions. |
| .diff.2,Extract NRD/NRS for MOSFETs (except extendedDrain Fets) per the equations defined in USC-206. NRD/NRS for the n-type ESD devices must include the ntap enclosed in the source/drain ndiff hole NRD/NRS for the p-type ESD devices must include the ptap enclosed in the source/drain pdiff hole. |
| .xnwvc.1,Inside the Varactor device boundry (see rule PASSIVES.cnwvc.1) all layers listed in the model (m1 and below) will not have resistance extracted. |
| |
| ,contact-to-gate space (CT.-) |
| .via,All vias will have parasitic resistance extracted. |
| .mcon,All mcons will have parasitic resistance extracted. |
| .licon.1,All licons that are connected to Poly and not connected to the poly of the xhrpoly_X_X device should have resistance extracted. |
| .licon.2,All licons that are connnected to non-precision resistors will have resistance extracted. |
| .licon.3,All licons that are connected to FETs will be extracted by RCX. |
| .licon.4,All licons on diff of PNP/NPN will be considered part of the device model. |
| .licon.5,All licons on tap of PNP/NPN will be considered part of the device model. |
| .licon.6,All licons on non-PNP tap regions will have parasitic resistance extracted. |
| .hrpoly.1,"All licons and mcons that are part of the hrpoly resistor will not have parasitic resitance extracted, these contacts are in the models." |
| .pwres.1,"All licons and mcons that are part of the pwell resistor will not have parasitic resitance extracted, these contacts are in the models." |
